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CN101811892A - Method for preparing nanowire-toughened carbon/carbon composite material ceramic coating - Google Patents

Method for preparing nanowire-toughened carbon/carbon composite material ceramic coating Download PDF

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CN101811892A
CN101811892A CN 201010142230 CN201010142230A CN101811892A CN 101811892 A CN101811892 A CN 101811892A CN 201010142230 CN201010142230 CN 201010142230 CN 201010142230 A CN201010142230 A CN 201010142230A CN 101811892 A CN101811892 A CN 101811892A
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CN101811892B (en
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付前刚
褚衍辉
李贺军
李克智
郭领军
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Northwestern Polytechnical University
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Abstract

The invention discloses a method for preparing a nanowire-toughened carbon/carbon composite material ceramic coating. The method aims to solve the technical problem that the ceramic coating prepared by a conventional method has poor denseness. The method adopts the following technical scheme that: the nanowire-toughened carborundum (SiC)-molybdenum disilicide (MoSi2)-chromium silicide (CrSi2) ceramic coating is prepared by chemical vapor deposition, the cracking trend of the coating is reduced, and the ceramic coating with a dense structure is prepared by means of the toughening effect of nanowires. The effective anti-oxidization time of the prepared ceramic coating in atmosphere at the temperature of 1,500 DEG C is improved to 140 and 155 hours from 50 hours in background technology.

Description

一种纳米线增韧碳/碳复合材料陶瓷涂层的制备方法 A preparation method of nanowire toughened carbon/carbon composite ceramic coating

技术领域technical field

本发明涉及一种碳/碳复合材料陶瓷涂层的制备方法,特别是纳米线增韧碳/碳复合材料(以下简称C/C复合材料)陶瓷涂层的制备方法。The invention relates to a preparation method of a carbon/carbon composite material ceramic coating, in particular to a preparation method of a nanowire toughened carbon/carbon composite material (hereinafter referred to as C/C composite material) ceramic coating.

背景技术Background technique

高温易氧化是热结构C/C复合材料实际应用中最难突破的瓶颈问题,国内外研究者提出了许多解决方法,而在其表面制备防氧化涂层是一种有效的手段,其中,陶瓷涂层具有良好的抗氧化性能以及与C/C复合材料较好的物理化学相容性,是C/C复合材料理想的涂层材料。然而,陶瓷涂层的脆性是其在实际应用过程中最难突破的瓶颈。现有的陶瓷涂层体系防氧化失效的主要原因是因陶瓷涂层与C/C基体的热膨胀系数的不匹配,使陶瓷涂层中存在较大的热应力,导致陶瓷涂层在高低温交变过程中易开裂,为了缓解了陶瓷涂层的开裂趋势,晶须增韧陶瓷涂层技术引起了研究人员的极大关注。Oxidation at high temperature is the most difficult bottleneck in the practical application of thermal structural C/C composites. Researchers at home and abroad have proposed many solutions, and preparing an anti-oxidation coating on its surface is an effective means. Among them, ceramics The coating has good oxidation resistance and good physical and chemical compatibility with C/C composite materials, so it is an ideal coating material for C/C composite materials. However, the brittleness of ceramic coatings is the most difficult bottleneck in its practical application. The main reason for the anti-oxidation failure of the existing ceramic coating system is that the thermal expansion coefficient of the ceramic coating and the C/C substrate does not match, so that there is a large thermal stress in the ceramic coating, resulting in the ceramic coating being exposed to high and low temperature. In order to alleviate the cracking tendency of ceramic coatings, the whisker toughened ceramic coating technology has attracted great attention of researchers.

文献“A SiC whisker-toughened SiC-CrSi2 oxidation protective coating forcarbon/carbon composites,Fu Qiangang,Li Hejun,Shi Xiaohong,Li Kezhi,and Zhang Wei,Huang Min.Applied Surface Science 2007(253):3757-3760”公开了一种采用料浆法和包埋法相结合的两步技术制备SiC晶须增韧SiC-CrSi2陶瓷涂层的方法,该方法首先在C/C复合材料表面采用料浆法制备多孔的SiC晶须增韧SiC涂层;其次,采用包埋法使Si-Cr合金填充SiC晶须增韧SiC涂层中的孔隙。该技术尽管在一定程度上缓解了陶瓷涂层在高低温交变过程中的开裂趋势,但晶须增韧陶瓷涂层增韧的效果不理想。由于SiC晶须在涂层中易团聚,分散不均匀,使增韧效果受限,而且SiC晶须尺寸较大,会阻碍涂层粉料扩散,使得涂层不够致密,存在大的孔洞,大大降低该涂层的防氧化性能,如在1500℃氧化50小时后涂层试件失重率已达到0.66%。Literature "A SiC whisker-toughened SiC-CrSi 2 oxidation protective coating for carbon/carbon composites, Fu Qiangang, Li Hejun, Shi Xiaohong, Li Kezhi, and Zhang Wei, Huang Min. Applied Surface Science 2007(253): 3757-3760" A method for preparing SiC whisker-toughened SiC- CrSi2 ceramic coatings is disclosed by a two-step technology combining the slurry method and the embedding method. The method first prepares porous ceramic coatings on the surface of the C/C composite material by the slurry method. SiC whisker toughened SiC coating; secondly, Si-Cr alloy was used to fill the pores in SiC whisker toughened SiC coating by embedding method. Although this technology alleviates the cracking tendency of the ceramic coating in the high and low temperature alternating process to a certain extent, the toughening effect of the whisker toughened ceramic coating is not ideal. Because SiC whiskers are easy to agglomerate in the coating and dispersed unevenly, the toughening effect is limited, and the SiC whiskers are large in size, which will hinder the diffusion of coating powder, making the coating not dense enough, and there are large holes, which greatly Reduce the oxidation resistance of the coating, for example, the weight loss rate of the coating specimen has reached 0.66% after oxidation at 1500°C for 50 hours.

发明内容Contents of the invention

为了克服现有方法制备的陶瓷涂层致密性差的不足,本发明提供一种纳米线增韧C/C复合材料陶瓷涂层的制备方法。该方法采用化学气相沉积制备SiC纳米线增韧SiC-MoSi2-CrSi2陶瓷涂层,借助纳米线增韧的作用,可以减小涂层的开裂趋势,制备出结构致密的陶瓷涂层。In order to overcome the shortage of poor compactness of the ceramic coating prepared by the existing method, the invention provides a preparation method of the nanowire toughened C/C composite ceramic coating. The method adopts chemical vapor deposition to prepare a SiC nanowire toughened SiC-MoSi 2 -CrSi 2 ceramic coating, and the toughening effect of the nanowire can reduce the cracking tendency of the coating and prepare a ceramic coating with a dense structure.

本发明解决其技术问题所采用的技术方案:一种纳米线增韧C/C复合材料陶瓷涂层的制备方法,其特征在于包括下述步骤:The technical solution adopted by the present invention to solve the technical problem: a method for preparing a nanowire toughened C/C composite ceramic coating, which is characterized in that it includes the following steps:

1)将C/C复合材料打磨抛光后清洗,放入烘箱中烘干;1) Clean the C/C composite material after grinding and polishing, and put it in an oven for drying;

2)分别称取质量百分比为10~20%的Si粉,15~30%的C粉,55~75%的SiO2粉,置于松脂球磨罐中,球磨混合处理2~4小时;2) Weighing Si powder with a mass percentage of 10-20%, C powder with 15-30%, and SiO powder with 55-75% respectively, and placing them in a turpentine ball mill tank, and ball milling for 2-4 hours;

3)将步骤2)制备的粉料放入石墨坩埚中,使其粉料厚度为石墨坩埚深度的1/5,再将步骤1)处理的C/C复合材料用炭纤维捆绑后悬挂在石墨坩埚内粉料表面的上方;3) Put the powder prepared in step 2) into the graphite crucible so that the thickness of the powder is 1/5 of the depth of the graphite crucible, then bind the C/C composite material processed in step 1) with carbon fibers and hang it on the graphite crucible Above the surface of the powder in the crucible;

4)将石墨坩埚放入真空反应炉中,对真空炉进行真空处理后,通氩气至常压,以5~10℃/min升温速度将炉温从室温升至1600~1700℃,保温1~3小时;随后关闭电源自然冷却至室温,整个过程中通氩气保护;4) Put the graphite crucible into the vacuum reaction furnace. After vacuuming the vacuum furnace, pass argon to normal pressure, raise the furnace temperature from room temperature to 1600-1700°C at a heating rate of 5-10°C/min, and keep warm. 1 to 3 hours; then turn off the power and cool down to room temperature naturally, and protect with argon during the whole process;

5)分别称取质量百分比为40~65%的Si粉,5~10%的C粉,20~30%的MoSi2粉,10~20%的Cr粉,置于松脂球磨罐中,球磨混合处理2~4小时;5) Weigh Si powder with a mass percentage of 40-65%, C powder with 5-10%, MoSi2 powder with 20-30%, and Cr powder with 10-20%, and place them in a turpentine ball mill jar, and mix them by ball milling Treat for 2 to 4 hours;

6)将步骤5)制备的粉料一半放入石墨坩埚中,再放入经步骤4)制备的表面含有SiC纳米线的C/C复合材料,随后放入另一半包埋粉料将表面含有SiC纳米线的C/C复合材料覆盖;6) Put half of the powder prepared in step 5) into a graphite crucible, then put the C/C composite material containing SiC nanowires on the surface prepared in step 4), and then put the other half of the embedding powder to cover the surface containing C/C composite coverage of SiC nanowires;

7)将石墨坩埚放入真空反应炉中,对真空炉进行真空处理后,通氩气至常压,以5~10℃/min升温速度将炉温从室温升至2100~2300℃,保温1~3小时;随后关闭电源自然冷却至室温,整个过程中通氩气保护。7) Put the graphite crucible into the vacuum reaction furnace. After vacuuming the vacuum furnace, pass argon to normal pressure, raise the furnace temperature from room temperature to 2100-2300°C at a heating rate of 5-10°C/min, and keep warm. 1 to 3 hours; then turn off the power and cool down to room temperature naturally, and protect with argon during the whole process.

本发明的有益效果是:由于采用化学气相沉积制备SiC纳米线增韧SiC-MoSi2-CrSi2陶瓷涂层,借助纳米线增韧的作用,减小了涂层的开裂趋势,制备出结构致密的陶瓷涂层。所制备的陶瓷涂层在1500℃空气中的有效防氧化时间由背景技术的50小时提高到140~155小时。The beneficial effects of the present invention are: due to the SiC nanowire toughened SiC-MoSi 2 -CrSi 2 ceramic coating prepared by chemical vapor deposition, the cracking tendency of the coating is reduced by virtue of the toughening effect of the nanowire, and a compact structure is prepared. ceramic coating. The effective anti-oxidation time of the prepared ceramic coating in air at 1500 DEG C is increased from 50 hours in the background technology to 140-155 hours.

下面结合附图和实施例对本发明作详细说明。The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

附图说明Description of drawings

图1是本发明实施例2所制备的SiC纳米线表面扫描电镜照片。FIG. 1 is a scanning electron micrograph of the surface of SiC nanowires prepared in Example 2 of the present invention.

图2是本发明实施例2所制备的SiC纳米线增韧陶瓷涂层表面扫描电镜照片。Fig. 2 is a scanning electron micrograph of the surface of the SiC nanowire toughened ceramic coating prepared in Example 2 of the present invention.

图3是本发明实施例2所制备的SiC纳米线增韧陶瓷涂层断面扫描电镜照片。Fig. 3 is a scanning electron micrograph of the cross-section of the SiC nanowire toughened ceramic coating prepared in Example 2 of the present invention.

图4是本发明实施例2所制备的表面含SiC纳米线增韧陶瓷涂层的C/C复合材料1500℃氧化失重曲线。Fig. 4 is the oxidation weight loss curve at 1500°C of the C/C composite material with SiC nanowire toughened ceramic coating on the surface prepared in Example 2 of the present invention.

具体实施方式Detailed ways

实施例1:将C/C复合材料分别用400号、800号和1000号的砂纸依次打磨抛光后用无水乙醇洗涤干净,于烘箱中烘干备用。Example 1: The C/C composite material was sequentially polished and polished with No. 400, No. 800 and No. 1000 sandpaper respectively, washed with absolute ethanol, and dried in an oven for later use.

分别称取10g的Si粉,25g的C粉和65g的SiO2粉。置于松脂球磨罐中,取不同数量不同直径的玛瑙球放入松脂球磨罐中,在行星式球磨机上进行球磨混合处理2h,作为粉料备用。Weigh 10g of Si powder, 25g of C powder and 65g of SiO2 powder respectively. Place in a turpentine ball mill jar, take different numbers of agate balls with different diameters into the rosin ball mill jar, and perform ball milling and mixing treatment on a planetary ball mill for 2 hours, and use it as a powder for later use.

将粉料放入石墨坩埚中,使其粉料厚度为石墨坩埚深度的五分之一,再将烘干后的C/C复合材料用一束3K炭纤维捆绑后悬挂在粉料表面的上方,然后将石墨坩埚放入真空反应炉中。抽真空30分钟后使真空度达到-0.09MPa,保真空30分钟,观察真空表指示是否变化,如无变化,说明系统密封完好。通氩气至常压。此过程重复三次。之后将炉温升至1600℃,升温速率为5℃/min,然后保温2小时。随后关闭电源自然冷却至室温,整个过程中通氩气保护。随后取出石墨坩埚,清理C/C复合材料上的炭纤维得到表面含有SiC纳米线的C/C复合材料。Put the powder into the graphite crucible so that the thickness of the powder is one-fifth of the depth of the graphite crucible, then bind the dried C/C composite material with a bundle of 3K carbon fibers and hang it above the surface of the powder , and then put the graphite crucible into the vacuum reactor. After evacuating for 30 minutes, make the vacuum degree reach -0.09MPa, keep the vacuum for 30 minutes, and observe whether the indication of the vacuum gauge changes. If there is no change, it means that the system is well sealed. Blow argon to normal pressure. This process is repeated three times. Afterwards, the furnace temperature was raised to 1600° C. at a heating rate of 5° C./min, and then kept for 2 hours. Then turn off the power and cool down to room temperature naturally, and protect with argon during the whole process. Then the graphite crucible is taken out, and the carbon fibers on the C/C composite material are cleaned to obtain a C/C composite material with SiC nanowires on the surface.

分别称取40g的Si粉,10g的C粉,30g的MoSi2粉,20g的Cr粉。置于松脂球磨罐中,取不同数量不同直径的玛瑙球放入松脂球磨罐中,在行星式球磨机上进行球磨混合处理3小时,作为包埋料备用。Weigh 40g of Si powder, 10g of C powder, 30g of MoSi 2 powder, and 20g of Cr powder. Place in a turpentine ball mill jar, put agate balls of different numbers and diameters into the rosin ball mill jar, and perform ball milling and mixing treatment on a planetary ball mill for 3 hours, and use it as an embedding material for later use.

将上述包埋料的一半放入石墨坩埚,放入制备好的表面含有SiC纳米线的C/C复合材料,再放入另一半包埋料,轻微的摇晃石墨坩埚,使包埋料均匀地包埋表面含有SiC纳米线的C/C复合材料,然后将石墨坩埚放入真空反应炉中。抽真空30分钟后使真空度达到-0.09MPa,保真空30分钟,观察真空表指示是否变化,如无变化,说明系统密封完好。通氩气至常压。此过程重复三次。之后将炉温升至2100℃,升温速率为7℃/min,然后保温2小时。随后关闭电源自然冷却至室温,整个过程中通氩气保护。随后取出石墨坩埚,清理包埋粉料得到含有SiC纳米线增韧SiC-MoSi2-CrSi2陶瓷涂层的C/C复合材料。Put half of the above-mentioned embedding material into the graphite crucible, put it into the prepared C/C composite material containing SiC nanowires on the surface, then put the other half of the embedding material, and shake the graphite crucible slightly to make the embedding material evenly The C/C composite material containing SiC nanowires on the surface is embedded, and then the graphite crucible is placed in a vacuum reactor. After evacuating for 30 minutes, make the vacuum degree reach -0.09MPa, keep the vacuum for 30 minutes, and observe whether the indication of the vacuum gauge changes. If there is no change, it means that the system is well sealed. Blow argon to normal pressure. This process is repeated three times. Afterwards, the furnace temperature was raised to 2100° C. at a heating rate of 7° C./min, and then kept for 2 hours. Then turn off the power and cool down to room temperature naturally, and protect with argon during the whole process. Then the graphite crucible is taken out, and the embedding powder is cleaned to obtain a C/C composite material containing SiC nanowire toughened SiC-MoSi 2 -CrSi 2 ceramic coating.

氧化实验表明:SiC纳米线增韧的SiC-MoSi2-CrSi2陶瓷涂层在1500℃空气中的有效防氧化时间达到140小时。Oxidation experiments show that the SiC nanowire toughened SiC-MoSi 2 -CrSi 2 ceramic coating has an effective anti-oxidation time of 140 hours in air at 1500°C.

实施例2:将C/C复合材料分别用400号、800号和1000号的砂纸依次打磨抛光后用无水乙醇洗涤干净,于烘箱中烘干备用。Example 2: The C/C composite material was sequentially polished and polished with No. 400, No. 800 and No. 1000 sandpaper respectively, washed with absolute ethanol, and dried in an oven for later use.

分别称取15g的Si粉,30g的C粉和75g的SiO2粉。置于松脂球磨罐中,取不同数量不同直径的玛瑙球放入松脂球磨罐中,在行星式球磨机上进行球磨混合处理3h,作为粉料备用。Weigh 15g of Si powder, 30g of C powder and 75g of SiO2 powder respectively. Place in a turpentine ball mill jar, put agate balls of different numbers and different diameters into the rosin ball mill jar, and perform ball milling and mixing treatment on a planetary ball mill for 3 hours, and use it as a powder for later use.

将粉料放入石墨坩埚中,使其粉料厚度为石墨坩埚深度的五分之一,再将烘后的C/C复合材料用一束3K炭纤维捆绑后悬挂在粉料表面的上方,然后将石墨坩埚放入真空反应炉中。抽真空30分钟后使真空度达到-0.09MPa,保真空30分钟,观察真空表指示是否变化,如无变化,说明系统密封完好。通氩气至常压。此过程重复三次。之后将炉温升至1650℃,升温速率为7℃/min,然后保温3小时。随后关闭电源自然冷却至室温,整个过程中通氩气保护。随后取出石墨坩埚,清理C/C复合材料上的炭纤维得到表面含有SiC纳米线的C/C复合材料。Put the powder into the graphite crucible so that the thickness of the powder is one-fifth of the depth of the graphite crucible, then bind the baked C/C composite material with a bundle of 3K carbon fibers and hang it above the surface of the powder, Then put the graphite crucible into the vacuum reactor. After evacuating for 30 minutes, make the vacuum degree reach -0.09MPa, keep the vacuum for 30 minutes, and observe whether the indication of the vacuum gauge changes. If there is no change, it means that the system is well sealed. Blow argon to normal pressure. This process is repeated three times. Afterwards, the furnace temperature was raised to 1650° C. at a heating rate of 7° C./min, and then kept at a temperature of 3 hours. Then turn off the power and cool down to room temperature naturally, and protect with argon during the whole process. Then the graphite crucible is taken out, and the carbon fibers on the C/C composite material are cleaned to obtain a C/C composite material with SiC nanowires on the surface.

分别称取的50g的Si粉,8g的C粉,27g的MoSi2粉,15g的Cr粉。置于松脂球磨罐中,取不同数量不同直径的玛瑙球放入松脂球磨罐中,在行星式球磨机上进行球磨混合处理4小时,作为包埋料备用。50g of Si powder, 8g of C powder, 27g of MoSi 2 powder and 15g of Cr powder were weighed respectively. Place in a turpentine ball mill jar, put agate balls of different numbers and diameters into the rosin ball mill jar, and perform ball milling and mixing treatment on a planetary ball mill for 4 hours, and use it as an embedding material for later use.

将上述包埋料的一半放入石墨坩埚,放入制备好的表面含有SiC纳米线的C/C复合材料,再放入另一半包埋料,轻微的摇晃石墨坩埚,使包埋料均匀地包埋表面含有SiC纳米线的C/C复合材料,然后将石墨坩埚放入真空反应炉中。抽真空30分钟后使真空度达到-0.09MPa,保真空30分钟,观察真空表指示是否变化,如无变化,说明系统密封完好。通氩气至常压。此过程重复三次。之后将炉温升至2200℃,升温速率为10℃/min,然后保温3小时。随后关闭电源自然冷却至室温,整个过程中通氩气保护。随后取出石墨坩埚,清理包埋粉料得到含有SiC纳米线增韧SiC-MoSi2-CrSi2陶瓷涂层的C/C复合材料。Put half of the above-mentioned embedding material into the graphite crucible, put it into the prepared C/C composite material containing SiC nanowires on the surface, then put the other half of the embedding material, and shake the graphite crucible slightly to make the embedding material evenly The C/C composite material containing SiC nanowires on the surface is embedded, and then the graphite crucible is placed in a vacuum reactor. After evacuating for 30 minutes, make the vacuum degree reach -0.09MPa, keep the vacuum for 30 minutes, and observe whether the indication of the vacuum gauge changes. If there is no change, it means that the system is well sealed. Blow argon to normal pressure. This process is repeated three times. Afterwards, the furnace temperature was raised to 2200° C. at a heating rate of 10° C./min, and then kept for 3 hours. Then turn off the power and cool down to room temperature naturally, and protect with argon during the whole process. Then the graphite crucible is taken out, and the embedding powder is cleaned to obtain a C/C composite material containing SiC nanowire toughened SiC-MoSi 2 -CrSi 2 ceramic coating.

由图1可见,化学气相沉积获得的C/C复合材料表面的SiC纳米线取向无规则分布,形成了疏松的多孔结构。由图2可见,制备的SiC纳米线增韧陶瓷涂层结构致密,无明显孔洞和裂纹等缺陷。由图3可见,制备的的SiC纳米线在陶瓷涂层中取向杂乱、分散均匀。由图4可知,SiC纳米线增韧SiC-MoSi2-CrSi2陶瓷涂层防氧化能力明显提高,在1500℃空气中的有效防氧化时间达到155小时。It can be seen from Figure 1 that the orientation of SiC nanowires on the surface of the C/C composite obtained by chemical vapor deposition is randomly distributed, forming a loose porous structure. It can be seen from Figure 2 that the prepared SiC nanowire toughened ceramic coating has a compact structure without obvious defects such as holes and cracks. It can be seen from Figure 3 that the as-prepared SiC nanowires have disordered orientation and uniform dispersion in the ceramic coating. It can be seen from Figure 4 that the oxidation resistance of the SiC nanowire toughened SiC-MoSi 2 -CrSi 2 ceramic coating is significantly improved, and the effective oxidation resistance time in air at 1500°C reaches 155 hours.

实施例3:将C/C复合材料分别用400号、800号和1000号的砂纸依次打磨抛光后用无水乙醇洗涤干净,于烘箱中烘干备用。Example 3: The C/C composite material was sequentially polished and polished with No. 400, No. 800 and No. 1000 sandpaper respectively, washed with absolute ethanol, and dried in an oven for later use.

分别称取20g的Si粉,15g的C粉和55g的SiO2粉。置于松脂球磨罐中,取不同数量不同直径的玛瑙球放入松脂球磨罐中,在行星式球磨机上进行球磨混合处理4h,作为粉料备用。Weigh 20g of Si powder, 15g of C powder and 55g of SiO2 powder respectively. Place in a turpentine ball mill jar, put agate balls of different numbers and different diameters into the turpentine ball mill jar, and carry out ball milling and mixing treatment on a planetary ball mill for 4 hours, and use it as a powder for later use.

将粉料放入石墨坩埚中,使其粉料厚度为石墨坩埚深度的五分之一,再将烘后的C/C复合材料用一束3K炭纤维捆绑后悬挂在粉料表面的上方,然后将石墨坩埚放入真空反应炉中。抽真空30分钟后使真空度达到-0.09MPa,保真空30分钟,观察真空表指示是否变化,如无变化,说明系统密封完好。通氩气至常压。此过程重复三次。之后将炉温升至1700℃,升温速率为10℃/min,然后保温1小时。随后关闭电源自然冷却至室温,整个过程中通氩气保护。随后取出石墨坩埚,清理C/C复合材料上的炭纤维得到表面含有SiC纳米线的C/C复合材料。Put the powder into the graphite crucible so that the thickness of the powder is one-fifth of the depth of the graphite crucible, then bind the baked C/C composite material with a bundle of 3K carbon fibers and hang it above the surface of the powder, Then put the graphite crucible into the vacuum reactor. After evacuating for 30 minutes, make the vacuum degree reach -0.09MPa, keep the vacuum for 30 minutes, and observe whether the indication of the vacuum gauge changes. If there is no change, it means that the system is well sealed. Blow argon to normal pressure. This process is repeated three times. Afterwards, the furnace temperature was raised to 1700° C. at a heating rate of 10° C./min, and then kept for 1 hour. Then turn off the power and cool down to room temperature naturally, and protect with argon during the whole process. Then the graphite crucible is taken out, and the carbon fibers on the C/C composite material are cleaned to obtain a C/C composite material with SiC nanowires on the surface.

分别称取的65g的Si粉,5g的C粉,20g的MoSi2粉,10g的Cr粉。置于松脂球磨罐中,取不同数量不同直径的玛瑙球放入松脂球磨罐中,在行星式球磨机上进行球磨混合处理2小时,作为包埋料备用。65g of Si powder, 5g of C powder, 20g of MoSi 2 powder and 10g of Cr powder were weighed respectively. Place in a turpentine ball mill jar, put agate balls of different numbers and diameters into the rosin ball mill jar, and perform ball milling and mixing treatment on a planetary ball mill for 2 hours, and use it as an embedding material for later use.

将上述包埋料的一半放入石墨坩埚,放入制备好的表面含有SiC纳米线的C/C复合材料,再放入另一半包埋料,轻微的摇晃石墨坩埚,使包埋料均匀地包埋表面含有SiC纳米线的C/C复合材料,然后将石墨坩埚放入真空反应炉中。抽真空30分钟后使真空度达到-0.09MPa,保真空30分钟,观察真空表指示是否变化,如无变化,说明系统密封完好。通氩气至常压。此过程重复三次。之后将炉温升至2300℃,升温速率为5℃/min,然后保温1小时。随后关闭电源自然冷却至室温,整个过程中通氩气保护。随后取出石墨坩埚,清理包埋粉料得到含有SiC纳米线增韧SiC-MoSi2-CrSi2陶瓷涂层的C/C复合材料。Put half of the above-mentioned embedding material into the graphite crucible, put it into the prepared C/C composite material containing SiC nanowires on the surface, then put the other half of the embedding material, and shake the graphite crucible slightly to make the embedding material evenly The C/C composite material containing SiC nanowires on the surface is embedded, and then the graphite crucible is placed in a vacuum reactor. After evacuating for 30 minutes, make the vacuum degree reach -0.09MPa, keep the vacuum for 30 minutes, and observe whether the indication of the vacuum gauge changes. If there is no change, it means that the system is well sealed. Blow argon to normal pressure. This process is repeated three times. Afterwards, the furnace temperature was raised to 2300° C. at a heating rate of 5° C./min, and then kept for 1 hour. Then turn off the power and cool down to room temperature naturally, and protect with argon during the whole process. Then the graphite crucible is taken out, and the embedding powder is cleaned to obtain a C/C composite material containing SiC nanowire toughened SiC-MoSi 2 -CrSi 2 ceramic coating.

氧化实验表明:SiC纳米线增韧的SiC-MoSi2-CrSi2陶瓷涂层在1500℃空气中的有效防氧化时间达到150小时。Oxidation experiments show that the SiC nanowire-toughened SiC-MoSi 2 -CrSi 2 ceramic coating has an effective anti-oxidation time of 150 hours in air at 1500°C.

所有实施例中,Si粉的纯度为99.5%、粒度为300目,C粉的纯度为99%、粒度为320目,SiO2粉的纯度分析纯、粒度为300目,MoSi2粉的纯度为99%、粒度为300目,Cr粉的纯度为高纯、粒度为200目。In all embodiments, the purity of Si powder is 99.5%, and particle size is 300 orders, and the purity of C powder is 99%, and particle size is 320 orders, and the purity of SiO2 powder is analytically pure, and particle size is 300 orders, and the purity of MoSi2 powder is 99%, the particle size is 300 mesh, the purity of Cr powder is high purity, and the particle size is 200 mesh.

Claims (1)

1. the preparation method of a nanowire-toughened carbon/carbon/carbon/carbon composite material ceramic coating is characterized in that comprising the steps:
1) with cleaning behind the C/C matrix material sanding and polishing, puts into baking oven and dry;
2) taking by weighing mass percent respectively is 10~20% Si powder, 15~30% C powder, 55~75% SiO 2Powder places the rosin ball grinder, ball milling combination treatment 2~4 hours;
3) with step 2) powder of preparation puts into plumbago crucible, and making its powder thickness is 1/5 of the plumbago crucible degree of depth, is suspended on the top on powder surface in the plumbago crucible after the C/C matrix material that step 1) is handled bundlees with the charcoal fiber again;
4) plumbago crucible is put into the vacuum reaction stove, vacuum oven is carried out vacuum-treat after, logical argon gas rises to 1600~1700 ℃ with furnace temperature from room temperature with 5~10 ℃/min heat-up rate to normal pressure, is incubated 1~3 hour; Powered-down naturally cools to room temperature subsequently, logical argon shield in the whole process;
5) taking by weighing mass percent respectively is 40~65% Si powder, 5~10% C powder, 20~30% MoSi 2Powder, 10~20% Cr powder places the rosin ball grinder, ball milling combination treatment 2~4 hours;
6) half puts into plumbago crucible with the powder of step 5) preparation, puts into the C/C matrix material that contains the SiC nano wire through the surface of step 4) preparation again, puts into the C/C matrix material that second half embedding powder contains the SiC nano wire with the surface subsequently and covers;
7) plumbago crucible is put into the vacuum reaction stove, vacuum oven is carried out vacuum-treat after, logical argon gas rises to 2100~2300 ℃ with furnace temperature from room temperature with 5~10 ℃/min heat-up rate to normal pressure, is incubated 1~3 hour; Powered-down naturally cools to room temperature subsequently, logical argon shield in the whole process.
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