CN101807558A - Element sealing and jointing structure and its process - Google Patents
Element sealing and jointing structure and its process Download PDFInfo
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- CN101807558A CN101807558A CN200910004134A CN200910004134A CN101807558A CN 101807558 A CN101807558 A CN 101807558A CN 200910004134 A CN200910004134 A CN 200910004134A CN 200910004134 A CN200910004134 A CN 200910004134A CN 101807558 A CN101807558 A CN 101807558A
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- 238000007789 sealing Methods 0.000 title claims abstract description 101
- 238000000034 method Methods 0.000 title claims abstract description 41
- 230000008569 process Effects 0.000 title claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 99
- 229910052751 metal Inorganic materials 0.000 claims description 74
- 239000002184 metal Substances 0.000 claims description 74
- 239000000853 adhesive Substances 0.000 claims description 34
- 230000001070 adhesive effect Effects 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 15
- 238000004806 packaging method and process Methods 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- 210000005036 nerve Anatomy 0.000 claims description 8
- 239000002861 polymer material Substances 0.000 claims description 6
- 230000004936 stimulating effect Effects 0.000 claims description 6
- 230000007383 nerve stimulation Effects 0.000 claims description 5
- 238000001465 metallisation Methods 0.000 claims description 3
- 230000001568 sexual effect Effects 0.000 claims 2
- 239000010410 layer Substances 0.000 description 58
- 238000010586 diagram Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 108090000623 proteins and genes Proteins 0.000 description 4
- 229910001020 Au alloy Inorganic materials 0.000 description 3
- 229910001080 W alloy Inorganic materials 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000003353 gold alloy Substances 0.000 description 3
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 3
- 210000003205 muscle Anatomy 0.000 description 3
- 231100000614 poison Toxicity 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 3
- 239000003440 toxic substance Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000008280 blood Substances 0.000 description 2
- 210000004369 blood Anatomy 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000008103 glucose Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 231100000252 nontoxic Toxicity 0.000 description 2
- 230000003000 nontoxic effect Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 102000004169 proteins and genes Human genes 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 238000002560 therapeutic procedure Methods 0.000 description 2
- 210000001519 tissue Anatomy 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 238000005842 biochemical reaction Methods 0.000 description 1
- 210000001124 body fluid Anatomy 0.000 description 1
- 239000010839 body fluid Substances 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrotherapy Devices (AREA)
Abstract
Description
技术领域technical field
本发明涉及一种密封接合结构,且特别是涉及一种同时达到元件密封及封装效果的密封接合结构及其工艺。The present invention relates to a sealing joint structure, and in particular to a sealing joint structure and a technique thereof which simultaneously achieve element sealing and packaging effects.
背景技术Background technique
综观医疗电子产品的发展趋势,注入式(implantable)微型封装元件及生物相容性(biocompatibility)技术扮演相当重要的角色,若无法达到生物相容性及密封性的要求,对注入微型封装元件的人体或动物而言,体液的侵蚀、降解或肌肉组织的活动所产生的破坏而使有毒物质侵入活体内,将有相当大的危险性。Looking at the development trend of medical electronic products, implantable micro-package components and biocompatibility technology play a very important role. If the requirements of biocompatibility and sealing cannot be met, the implantable micro-package components For humans or animals, the erosion and degradation of body fluids or the destruction of muscle tissue activities will cause toxic substances to invade the living body, which will be quite dangerous.
在采用钛金属盖(titanium can)的生医电子封装元件中,以多层陶瓷基板的电极将信号导通至外部。此多层陶瓷基板的制作是采用低温共烧陶瓷(LTCC,Low-Temperature Cofired Ceramics)技术,以金、银、铜等低阻抗金属作为电极,再使用平版印刷来涂布电路,最后在摄氏850度到900度中烧结而形成整合式陶瓷元件,并将此整合式陶瓷元件装入于钛金属盖的气闭密封空间中,而完成密封的工艺。In biomedical electronic packaging components using a titanium can, the electrodes of the multilayer ceramic substrate are used to conduct signals to the outside. The production of this multilayer ceramic substrate is based on low-temperature co-fired ceramics (LTCC, Low-Temperature Cofired Ceramics) technology, using gold, silver, copper and other low-impedance metals as electrodes, and then using lithography to coat the circuit, and finally at 850 degrees Celsius The integrated ceramic element is formed by sintering at a temperature of 900°C, and the integrated ceramic element is placed in the air-tight airtight space of the titanium metal cover to complete the sealing process.
近年来,为了达到微型化的要求,采用半导体集成电路工艺及封装技术,可制作出各式各样的微型封装元件,其以硅芯片、玻璃或高分子聚合物为基材,并结合微机电技术与生物医学技术,设计及制作具有微小化、快速、平行处理能力的生物及医疗用检测元件,例如基因芯片、蛋白质芯片、检体处理芯片及生物感测芯片等,充分运用分子生物学、分析化学、生化反应等原理,在微小面积上快速进行大量生化感测或反应。In recent years, in order to meet the requirements of miniaturization, various micro-package components can be produced by using semiconductor integrated circuit technology and packaging technology, which use silicon chips, glass or high molecular polymers as substrates, and combine micro-electromechanical components. Technology and biomedical technology, design and manufacture of biological and medical detection components with miniaturization, fast and parallel processing capabilities, such as gene chips, protein chips, specimen processing chips and biological sensing chips, etc., fully utilize molecular biology, Analyze the principles of chemistry and biochemical reactions, and quickly perform a large number of biochemical sensing or reactions on a small area.
此外,对于心律调整器(pacemaker)、神经刺激器(neurostimulator)或血糖监测器(blood glucose monitor)等注入式微型封装元件而言,为了避免有毒物质侵入活体内,密封材料及封装可靠度在安全上扮演着非常重要的角色。In addition, for injection-type micro-packaged components such as pacemakers, neurostimulators, or blood glucose monitors, in order to prevent toxic substances from invading the living body, the reliability of the sealing material and packaging must be safe. plays a very important role.
发明内容Contents of the invention
本发明提出一种元件密封接合结构,用以将元件封装于基板上,该元件密封结合结构包括缓冲凸块层、多个导电接合部、以及密封接合部。缓冲凸块层配置于该元件与该基板之间,该缓冲凸块层包括多个第一部分以及第二部分,且该第二部分环绕于该些第一部分的外围。多个导电接合部电性连接于该元件与该基板之间,其中各个导电接合部包括覆盖于各该第一部分的第一电极以及该基板上的第二电极,且各该第一电极与各该第二电极电性连接。密封接合部环绕于该些导电接合部的外围,该密封接合部包括该基板上的接合环,且该接合环与该第二部分相互接合,以使该元件与该基板之间形成密封空间。The invention provides an element sealing joint structure for packaging an element on a substrate. The element sealing joint structure includes a buffer bump layer, a plurality of conductive joint parts, and a sealing joint part. The buffer bump layer is disposed between the element and the substrate, the buffer bump layer includes a plurality of first parts and a second part, and the second part surrounds the periphery of the first parts. A plurality of conductive junctions are electrically connected between the element and the substrate, wherein each conductive junction includes a first electrode covering each first portion and a second electrode on the substrate, and each first electrode is connected to each The second electrode is electrically connected. The sealing joint part surrounds the periphery of the conductive joint parts, and the sealing joint part includes a joint ring on the substrate, and the joint ring and the second part are mutually jointed, so that a sealed space is formed between the element and the substrate.
本发明提出一种元件密封接合工艺。首先,提供预定形成元件的基材;形成缓冲层于该元件上;图案化该缓冲层,以形成包括多个第一部分以及第二部分的缓冲凸块层,其中该第二部分环绕于该些第一部分的外围;形成第一电极于各该第一部分上;提供基板,该基板形成有多个第二电极以及接合环,该接合环围绕于该些第二电极的外围。配置该元件于该基板上,其中各该第一电极对应于各该第二电极并与各该第二电极电性连接,且该接合环对应与该第二部分相互接合,以使该元件与该基板之间形成密封空间。The invention proposes an element hermetic bonding process. First, provide a base material for forming an element; form a buffer layer on the element; pattern the buffer layer to form a buffer bump layer including a plurality of first portions and second portions, wherein the second portion surrounds the elements The periphery of the first part; forming first electrodes on each of the first parts; providing a substrate, the substrate is formed with a plurality of second electrodes and a joint ring, and the joint ring surrounds the periphery of the second electrodes. The element is arranged on the substrate, wherein each of the first electrodes corresponds to each of the second electrodes and is electrically connected to each of the second electrodes, and the bonding ring is correspondingly bonded to the second part, so that the element and A sealed space is formed between the substrates.
本发明提出一种元件密封接合结构,用以将元件封装于基板上,该元件密封结合结构包括缓冲凸块层、多个导电接合部、以及密封接合部。缓冲凸块层配置于该元件与该基板之间,该元件具有多个接垫,而该缓冲凸块层具有环状部分,且该环状部分环绕于该些接垫的外围。多个导电接合部电性连接于该元件与该基板之间,其中各个导电接合部包括该元件上电性连接各该接垫的金属凸块以及该基板上的第二电极,且各该金属凸块与各该第二电极电性连接。密封接合部环绕于该些导电接合部的外围,该密封接合部包括该基板上的接合环,且该接合环与该环状部分相互接合,以使该元件与该基板之间形成密封空间。The invention provides an element sealing joint structure for packaging an element on a substrate. The element sealing joint structure includes a buffer bump layer, a plurality of conductive joint parts, and a sealing joint part. The buffer bump layer is disposed between the element and the substrate, the element has a plurality of pads, and the buffer bump layer has a ring-shaped portion surrounding the periphery of the pads. A plurality of conductive joints are electrically connected between the element and the substrate, wherein each conductive joint includes a metal bump electrically connected to each pad on the element and a second electrode on the substrate, and each metal The bumps are electrically connected to each of the second electrodes. The sealing joint part surrounds the periphery of the conductive joint parts, and the sealing joint part includes a joint ring on the substrate, and the joint ring and the ring part are mutually jointed to form a sealed space between the element and the substrate.
本发明提出一种元件密封接合工艺。首先,提供预定形成元件的基材,该元件具有多个接垫;形成缓冲层于该元件上;图案化该缓冲层,以形成具有环状部分的缓冲凸块层,其中该环状部分环绕于该些接垫的外围;形成多个金属凸块于该元件上,且各该金属凸块与各该接垫电性连接;提供基板,该基板形成有多个第二电极以及接合环,该接合环围绕于该些第二电极的外围。配置该元件于该基板上,其中各该金属凸块对应于各该第二电极并与各该第二电极电性连接,且该接合环对应与该环状部分相互接合,以使该元件与该基板之间形成密封空间。The invention proposes an element hermetic bonding process. Firstly, provide a base material for forming an element, the element has a plurality of contact pads; form a buffer layer on the element; pattern the buffer layer to form a buffer bump layer with a ring portion, wherein the ring portion surrounds On the periphery of the pads; forming a plurality of metal bumps on the element, and each of the metal bumps is electrically connected to each of the pads; providing a substrate, the substrate is formed with a plurality of second electrodes and a bonding ring, The bonding ring surrounds the periphery of the second electrodes. The element is disposed on the substrate, wherein each of the metal bumps corresponds to each of the second electrodes and is electrically connected to each of the second electrodes, and the bonding ring is correspondingly bonded to the annular portion, so that the element and A sealed space is formed between the substrates.
为让本发明的上述特征和优点能更明显易懂,下文特举实施例,并配合附图作详细说明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail with reference to the accompanying drawings.
附图说明Description of drawings
图1A及图1B为本发明二实施例的元件密封接合结构的剖面示意图。FIG. 1A and FIG. 1B are cross-sectional schematic diagrams of an element sealing joint structure according to two embodiments of the present invention.
图2A~图2E为图1A的元件密封接合结构的制作方法的流程示意图。2A to 2E are schematic flowcharts of the manufacturing method of the element sealing joint structure in FIG. 1A .
图3A及图3B为本发明另二实施例的元件密封接合结构的剖面示意图。3A and 3B are cross-sectional schematic diagrams of an element sealing joint structure according to another embodiment of the present invention.
图4A及图4B为本发明另二实施例的元件密封接合结构的剖面示意图。4A and 4B are cross-sectional schematic diagrams of an element sealing joint structure according to another embodiment of the present invention.
图5A及图5B为本发明另二实施例的元件密封接合结构的剖面示意图。5A and 5B are schematic cross-sectional views of an element sealing joint structure according to another second embodiment of the present invention.
图6A及图6B为本发明另二实施例的元件密封接合结构的剖面示意图。FIG. 6A and FIG. 6B are cross-sectional schematic views of an element sealing joint structure according to another second embodiment of the present invention.
附图标记说明Explanation of reference signs
1001~1010:元件密封接合结构1001~1010: Component seal joint structure
100:元件100: components
100S:有源表面100S: Active Surface
100P:保护层100P: protective layer
102:接垫102: Pad
104:金属层104: metal layer
104a:凸块底金属层104a: Under bump metallization layer
110’:缓冲材料110': cushioning material
110:缓冲凸块层110: buffer bump layer
110a:第一部分110a: Part I
110b:第二部分110b: Part II
110c:第三部分110c: Part Three
110d:环状部分110d: annular part
120:导电接合部120: Conductive junction
130:密封接合部130: Seal joint
140:基板140: Substrate
W:基材W: Substrate
S1:第一电极S1: first electrode
S2:第二电极S2: second electrode
S3:金属凸块S3: Metal bump
H1:第一粘着金属层H1: first adhesive metal layer
H2:第二粘着金属层H2: second adhesive metal layer
H3:第三粘着金属层H3: third adhesive metal layer
R1:接合环R1: adapter ring
C:密封空间C: sealed space
150:基板150: Substrate
152:导通孔152: via hole
S3:第三电极S3: third electrode
S4:神经刺激电极S4: Nerve stimulation electrodes
160:承载器160: Carrier
162:接垫162: Pad
170:生物相容性涂层170: biocompatible coating
100a:第一元件100a: first element
150a:第一基板150a: first substrate
100b:第二元件100b: second element
150b:第二基板150b: second substrate
具体实施方式Detailed ways
图1A及图1B为本发明二实施例的元件密封接合结构的剖面示意图。图2A~图2E为图1A的元件密封接合结构的制作方法的流程示意图。FIG. 1A and FIG. 1B are cross-sectional schematic diagrams of an element sealing joint structure according to two embodiments of the present invention. 2A to 2E are schematic flowcharts of the manufacturing method of the element sealing joint structure in FIG. 1A .
请参考图1A,元件密封接合结构1001包括缓冲凸块层110、多个导电接合部120、以及密封接合部130。其中,缓冲凸块层110例如以图案化的工艺形成多个第一部分110a以及环绕于这些第一部分110a的外围的第二部分110b(环状部分)。缓冲凸块层110的材料可为高分子材料的聚合物,例如是环氧树脂或聚酰亚胺树脂等,其作法是将高分子材料涂布在预定形成元件100的基材(例如是硅晶片)上,再进行曝光、显影工艺或光蚀刻、干蚀刻等工艺,以使高分子材料形成预定的图案(多个第一部分110a以及环绕于这些第一部分110a的外围的第二部分110b)。Referring to FIG. 1A , the component sealing
有关缓冲凸块层110的图案化工艺及详细的结构,请参考图2A~图2D。首先,提供基材W,例如是半导体基材,用以形成一个或多个集成电路元件100(仅绘示其一),此元件100具有有源表面100S以及保护层100P,而接垫102(仅绘示其一)配置于有源表面100S上,且保护层100P覆盖有源表面100S并显露出接垫102。接着,请参考图2B及图2C,以溅镀或蒸镀方式全面性形成金属层104于保护层100P以及接垫102上,并形成缓冲材料110’(高分子材料或感光型的高分子材料)于元件100上。接着,请参考图2D,图案化缓冲材料110’,例如是进行曝光、显影工艺或光蚀刻、干蚀刻工艺,以形成包括多个第一部分110a(仅绘示其一)以及第二部分110b的缓冲凸块层110,其中第二部分110b环绕于这些第一部分110a的外围,因此,第二部分110b也就是将多个第一部分110a完整包覆于的环状凸起结构,同时具有缓冲及密封的功效。之后,请参考图2E,以溅镀或蒸镀的方式形成第一电极S1(其材料例如为铜、铝或金)于各个第一部分110a上(例如覆盖第一部分110a的侧壁及上表面),且金属层104经过蚀刻之后成为凸块底金属层104a,并与覆盖于各个第一部份110a的第一电极S1电性连接。For the patterning process and detailed structure of the
在本实施例中,这些第一部分110a与第二部分110b以同一道图案化工艺一并完成,以减少工艺的步骤,并使后续的密封工艺以及元件封装步骤能同时进行。此外,这些第一部分110a与第二部分110b之间例如以蚀刻形成间距,使两者在结构上相互分离。但在另一实施例中,这些第一部分110a与第二部分110b之间在结构上相互连接,同样具有缓冲及密封的功效。In this embodiment, the
如图1B所示的另一实施例,元件密封接合结构1002包括缓冲凸块层110、多个导电接合部120、以及密封接合部130。其中,缓冲凸块层110例如以图案化的工艺形成多个第一部分110a以及环绕于这些第一部分110a的外围的第二部分110b。有关缓冲凸块层110的制作方法请参考图2A~图2D的步骤,在此不再详述。本实施例与图1A的元件密封结合结构及图2A~图2D的工艺不同的是,这些第一部分110a与第二部分11b之间具有第三部分(连接部)110c,且在结构上相互连接为一体(材料相同),未经由蚀刻而形成间距,故能加强密封的接合强度,并同时达到元件密封及封装的效果。In another embodiment as shown in FIG. 1B , the device sealing
接着,请参考图1A及图1B,导电接合部120电性连接于元件100与基板140(例如是印刷电路板)之间,用以将电信号经由基板140输入到元件100或经由基板140输出到外部,而各个导电接合部120包括覆盖于各个第一部分110a的第一电极S1以及基板140上的第二电极S2,且各个第一电极S1与各个第二电极S2例如通过第一粘着金属层H1(镍金合金或钛钨合金)电性连接。此外,密封接合部130环绕于这些导电接合部120的外围。密封接合部130包括基板140上的接合环R1(其材料例如是铜、铝或金),环绕于这些第二电极S2的外围,且该接合环R1与第二部分110b例如通过第二粘着金属层H2(镍金合金或钛钨合金)以及第三粘着金属层H3(镍金合金或钛钨合金)相互接合而形成气闭密封结构,以使元件100与基板140之间形成密封空间C。Next, please refer to FIG. 1A and FIG. 1B , the conductive joint 120 is electrically connected between the
在上述的二实施例中,第一粘着金属层H1例如以溅镀或蒸镀的方式形成于各个第一电极S1上(参见图2E),而第二粘着金属层H2(可与第一电极S1同一道步骤形成)以及第三粘着金属层H3例如分别形成于第二部分100b以及接合环R1上,而当元件100配置于基板140上时,还可进行热压合步骤,以使各个第一粘着金属层H1电性接合于各个第一电极S1与各个第二电极S2之间,而第二粘着金属层H2与第三粘着金属层H3紧密地接合(共晶接合)于接合环R1与第二部分110b之间,以加强密封的接合强度。但第一粘着金属层H1、第二粘着金属层H2与第三粘着金属层H3仅为本发明的实施例,并非用以限制本发明。In the above two embodiments, the first adhesive metal layer H1 is formed on each first electrode S1 (see FIG. 2E ), for example by sputtering or vapor deposition, and the second adhesive metal layer H2 (which can be S1 is formed in the same step) and the third adhesive metal layer H3 are, for example, formed on the second part 100b and the bonding ring R1 respectively, and when the
图3A及图3B为本发明另二实施例的元件密封接合结构的剖面示意图。请参考图3A及图3B,此元件密封接合结构1003、1004用以将元件100封装于基板150(例如是软性电路板)上,而基板150的第一表面上除了具有多个第二电极S2以及接合环R1之外,基板150的第二表面还包括多个第三电极S3。这些第三电极S3通过基板150的导通孔152分别与这些第二电极S2电性连接。此外,各个第三电极S3上还包括神经刺激电极S4(或导电贴片),可用于经皮电神经刺激器(TENS,Transcutaneous Electro Nerve Stimulator)中。各个神经刺激电极S4可经由其尖端放电,以提供电治疗或肌肉复健所需的刺激电流。3A and 3B are cross-sectional schematic diagrams of an element sealing joint structure according to another embodiment of the present invention. Please refer to FIG. 3A and FIG. 3B, the component sealing
另外,图4A及图4B为本发明另二实施例的元件密封接合结构的剖面示意图,其中图4A为具有生物相容性涂层170的元件密封接合结构1005的剖面示意图,而图4B为堆叠型封装的元件密封接合结构1006的剖面示意图。请先参考图4A,以心律调整器、神经刺激器或血糖监测器等注入式生医元件为例,此元件密封接合结构1005用以将元件100(例如单芯片元件)封装于基板150上,而基板150可通过多个导电体S5(例如焊球)与承载器160的接垫162电性连接,以将信号传递到活体的外部,且基板150上还包括生物相容性涂层170(例如是硅胶等无毒性高分子聚合物),其覆盖于元件100的周围,除了加强元件100的覆盖率及密封性,更不会对活体的组织产生危害。In addition, FIG. 4A and FIG. 4B are schematic cross-sectional views of an element sealing joint structure according to another two embodiments of the present invention, wherein FIG. 4A is a schematic cross-sectional view of an element sealing
接着,请参考图4B,堆叠型封装的元件密封接合结构1006用以将各个元件100(例如注入式生医元件或其他用途的单芯片元件)封装在各个基板150上,以形成堆叠型多芯片封装元件,其中第一元件100a的第一电极S1与第一基板150a的第二电极S2电性连接,接着第一基板150a的第三电极S3经由多个导电体S5(例如焊球)及穿过第二元件100b的多个导电穿孔S6与第二元件100b的金属接垫102电性连接,接着第二元件100b的第一电极S1与第二基板150b的第二电极S2电性连接,接着第二基板150b的第三电极S3经由多个导电体S5(例如焊球)与承载器160的接垫162电性连接,以将信号传到外部。如同图4A所述,各个基板150上还包括生物相容性涂层170(例如是硅胶等无毒性高分子聚合物),其覆盖于各个元件100的周围,除了加强各个元件100的覆盖率及密封性,更不会对活体的组织产生危害。当然,生物相容性涂层170亦可以其他高分子涂层(例如环氧树脂)取代,并非用以限制本发明。Next, please refer to FIG. 4B , the element sealing
再者,图5A及图5B为本发明另二实施例的元件密封接合结构的剖面示意图。请参考图5A及图5B,此元件密封接合结构1007、1008用以将元件100封装于基板140、150上,而基板140、150的第一表面上具有多个第二电极S1以及接合环R1。此外,基板150的第二表面还包括多个第三电极S3。各个第三电极S3通过基板150的导通孔152分别与各个第二电极S2电性连接。此外,在图5B中,各个第三电极S3上还包括神经刺激电极S4(或导电贴片),可用于经皮电神经刺激器(TENS)中。各个神经刺激电极S4可经由其尖端放电,以提供电治疗或肌肉复健所需的刺激电流。然而,图5A及图5B的实施例与上述二实施例(参见图1A、3A)不同的是,缓冲凸块层110的第一部分110a不是经由凸块底金属层104a形成在接垫102的上方,而是形成在接垫102附近的保护层上,接着再经由溅镀或蒸镀的方式形成第一电极S1于各个接垫102与各个第一部分110a之间(例如覆盖各个接垫102与各个第一部分110a的侧壁及上表面),以使各个接垫102通过各个第一电极S1与各个第二电极S2电性连接。Furthermore, FIG. 5A and FIG. 5B are cross-sectional schematic diagrams of an element sealing joint structure according to another second embodiment of the present invention. Please refer to FIG. 5A and FIG. 5B, the component sealing
有关图5A及图5B的缓冲凸块层110的工艺与上述的图2D及图2E的缓冲凸块层110的工艺类似,不同之处在于省略图2B的凸块底金属层104的工艺,且于图案化缓冲凸块层110之后,再以溅镀或蒸镀的方式形成第一电极S1,以电性连接各个接垫102。因此,缓冲凸块层110的第一部分110a的位置不限定位于接垫102的上方,亦可经由重布线的第一电极S1往内侧延伸,以适合不同需求的接点设计。The process of the
接着,图6A及图6B为本发明另二实施例的元件密封接合结构的剖面示意图。请参考图6A及图6B,元件密封接合结构1009、1010包括缓冲凸块层110、多个导电接合部120、以及密封接合部130。其中,缓冲凸块层110是以高分子材料的聚合物来制作环状部分110d(图6B中),并采用导电材料来制作多个金属凸块S3(取代原先的第一部分110a),且金属凸块S3可通过凸块底金属层104a与各个接垫102电性连接,以使第一电极S1、金属凸块S3以及第二电极S2构成具有电性连接功能的导电接合部120,而环绕于这些金属凸块S3周围的环状部分110d与密封接合部130接合,同时具有密封及缓冲的功效,以使元件100与基板140之间形成密封空间C。Next, FIG. 6A and FIG. 6B are cross-sectional schematic diagrams of an element sealing joint structure according to another embodiment of the present invention. Please refer to FIG. 6A and FIG. 6B , the component sealing
有关图6A及图6B的金属凸块S3的工艺与上述的图2D及图2E的缓冲凸块层110的工艺类似,不同之处在于以电镀方式形成金属凸块S3于接垫102上,且于形成金属凸块S3之后,再以溅镀或蒸镀的方式形成第一电极S1,以覆盖各个金属凸块S3。The process of the metal bump S3 in FIG. 6A and FIG. 6B is similar to the process of the
在本实施例中,上述的金属凸块S3的材料若为金时,可直接通过第一粘着金属层H1与第二电极S2电性连接,而不需先形成第一电极S1于金属凸块S3上。另外,金属凸块S3的材料若为铜或铜合金时,可通过金属凸块S3上的第一电极S1做为抗氧化层(例如镍/金层),以避免铜表面的氧化。In this embodiment, if the material of the above-mentioned metal bump S3 is gold, it can be directly electrically connected to the second electrode S2 through the first adhesive metal layer H1, without first forming the first electrode S1 on the metal bump. on S3. In addition, if the material of the metal bump S3 is copper or copper alloy, the first electrode S1 on the metal bump S3 can be used as an anti-oxidation layer (eg nickel/gold layer) to avoid oxidation of the copper surface.
综上所述,本发明提出多种元件密封接合结构及其工艺,可应用在各式各样的微型封装元件上,例如基因芯片、蛋白质芯片、检体处理芯片及生物感测芯片等,或者是注入式生医元件中。除了通过缓冲凸块层来加强密封的接合强度,还可同时达到元件密封及封装的效果,避免有毒物质侵入活体内。此外,缓冲凸块层以同一道图案化工艺完成,不需额外制作多个光掩模及进行多道光掩模工艺,以减少工艺的步骤,并使后续的密封工艺以及元件封装步骤能同时进行,进而简化元件密封及封装工艺及降低生产成本。In summary, the present invention proposes a variety of component sealing and bonding structures and processes thereof, which can be applied to various micro-packaged components, such as gene chips, protein chips, specimen processing chips, and bio-sensing chips, etc., or Injectable biomedical components. In addition to strengthening the bonding strength of the seal through the buffer bump layer, it can also achieve the effect of component sealing and packaging at the same time, preventing toxic substances from invading the living body. In addition, the buffer bump layer is completed in the same patterning process, which does not require additional fabrication of multiple photomasks and multiple photomask processes, so as to reduce process steps and enable subsequent sealing processes and component packaging steps to be performed simultaneously , thereby simplifying the component sealing and packaging process and reducing the production cost.
虽然本发明已以实施例披露如上,然其并非用以限定本发明,任何所属技术领域中普通技术人员,在不脱离本发明的精神和范围内,当可作些许的更动与润饰,故本发明的保护范围当视权利要求所界定者为准。Although the present invention has been disclosed above with embodiments, it is not intended to limit the present invention. Any person skilled in the art may make some modifications and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention should be defined by the claims.
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CN103915422A (en) * | 2013-01-04 | 2014-07-09 | 台湾积体电路制造股份有限公司 | Method And Apparatus For Semiconductor Structure |
CN105609439A (en) * | 2016-02-26 | 2016-05-25 | 海迪科(南通)光电科技有限公司 | CSP eutectic soldering method |
CN106298557A (en) * | 2015-05-22 | 2017-01-04 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of low-temperature bonding method based on Au/In isothermal solidification |
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CN1309067C (en) * | 2003-09-24 | 2007-04-04 | 财团法人工业技术研究院 | Elastic bump structure and manufacturing method thereof |
CN100521171C (en) * | 2004-10-21 | 2009-07-29 | 财团法人工业技术研究院 | Packaging and connecting structure of element |
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US10160638B2 (en) | 2013-01-04 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for a semiconductor structure |
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