CN101807436B - shift register - Google Patents
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Abstract
Description
技术领域 technical field
本发明涉及显示技术领域,尤其涉及一种移位暂存器。The present invention relates to the field of display technology, in particular to a shift register.
背景技术 Background technique
现有技术中将移位暂存器制作在基板,例如玻璃基板上,所采用的工艺主要为非晶硅工艺技术。由于非晶硅材质的载流子迁移率低,因此需要设计较大尺寸的薄膜晶体管,才能有效驱动显示面板的扫描线。然而,尺寸越大的薄膜晶体管所占据面板的空间也越大,很难设计在在窄边框或是电路空间有限的显示面板产品上;而且所产生的寄生电容效应也越大,造成时钟脉冲信号线上的功率消耗也大幅上升。因此将移位暂存器制作在基板上,虽然可以节省栅极驱动电路的成本,如果薄膜晶体管的尺寸大小和功率消耗问题没有获得改善,此项技术的应用层面也会有所限制。In the prior art, the shift register is manufactured on a substrate, such as a glass substrate, and the process adopted is mainly an amorphous silicon process technology. Due to the low carrier mobility of the amorphous silicon material, it is necessary to design a large-sized thin film transistor in order to effectively drive the scanning lines of the display panel. However, a thin film transistor with a larger size occupies more space on the panel, making it difficult to design on display panel products with narrow borders or limited circuit space; moreover, the generated parasitic capacitance effect is also greater, causing clock pulse signal The power consumption on the line has also increased significantly. Therefore, although the cost of the gate drive circuit can be saved by fabricating the shift register on the substrate, if the size and power consumption of the thin film transistor are not improved, the application level of this technology will be limited.
因此,若能将高载流子迁移率的半导体材质应用在移位暂存器的设计上,则能有效缩小薄膜晶体管的设计尺寸和降低功率消耗。高载流子迁移率的半导体材质虽然有较大的导通电流,但往往也伴随较大的关闭电流。以近期开发的半导体材质铟镓锌氧化物(IGZO)为例,IGZO的载流子迁移率约在5伏特每米秒(V/m·s),但制作出来的薄膜晶体管的临界电压约在-5V。因此,若将IGZO应用于现有技术所提出的移位暂存器电路结构,会造成大量的漏电流,导致移位暂存器失效。Therefore, if the semiconductor material with high carrier mobility can be applied to the design of the shift register, the design size of the thin film transistor can be effectively reduced and the power consumption can be reduced. Although a semiconductor material with high carrier mobility has a large on-current, it is often accompanied by a large off-current. Taking the recently developed semiconductor material indium gallium zinc oxide (IGZO) as an example, the carrier mobility of IGZO is about 5 volts per meter second (V/m s), but the threshold voltage of the fabricated thin film transistor is about -5V. Therefore, if IGZO is applied to the shift register circuit structure proposed in the prior art, a large amount of leakage current will be caused, resulting in failure of the shift register.
发明内容 Contents of the invention
本发明的目的就是在提供一种移位暂存器,以克服现有技术存在的技术缺陷。The purpose of the present invention is to provide a shift register to overcome the technical defects in the prior art.
因此,本发明一实施例提出的一种移位暂存器,其包括多个晶体管,接受启始脉冲信号、第一时钟脉冲信号以及第二时钟脉冲信号的控制以产生栅极驱动信号;其中第一时钟脉冲信号与第二时钟脉冲信号互为反相,且第一时钟脉冲信号的低电平与第二时钟脉冲信号的低电平相异。另外,各个晶体管均为负临界电压晶体管;且每一晶体管处于截止状态时,此晶体管的栅极的电位小于此晶体管的源/漏极的电位。Therefore, a shift register proposed by an embodiment of the present invention includes a plurality of transistors, which are controlled by a start pulse signal, a first clock signal, and a second clock signal to generate a gate drive signal; wherein The first clock signal and the second clock signal are opposite to each other, and the low level of the first clock signal is different from the low level of the second clock signal. In addition, each transistor is a negative threshold voltage transistor; and when each transistor is in an off state, the potential of the gate of the transistor is lower than the potential of the source/drain of the transistor.
在本发明的一实施例中,上述的多个晶体管包括第一晶体管、第二晶体管及第三晶体管;第一晶体管的栅极因电性耦接关系而接收第一时钟脉冲信号且通过耦合电容与第一晶体管的漏/源极电性相接,第一晶体管的源/漏极电性耦接至电源电压,且此电源电压的电平高于第一时钟脉冲信号的低电平且低于第二时钟脉冲信号的低电平;第二晶体管的栅极因电性耦接关系而接收第一时钟脉冲信号,第二晶体管的源/漏极电性耦接至第一晶体管的漏/源极,且第二晶体管的漏/源极因电性耦接关系而接收启始脉冲信号;第三晶体管的栅极电性耦接至第一晶体管的漏/源极,第三晶体管的源/漏极用以输出栅极驱动信号,且第三晶体管的漏/源极因电性耦接关系而接收第二时钟脉冲信号。In an embodiment of the present invention, the above-mentioned plurality of transistors include a first transistor, a second transistor, and a third transistor; the gate of the first transistor receives the first clock pulse signal due to an electrical coupling relationship and passes through a coupling capacitor It is electrically connected to the drain/source of the first transistor, and the source/drain of the first transistor is electrically coupled to a power supply voltage, and the level of the power supply voltage is higher than the low level of the first clock pulse signal and low At the low level of the second clock pulse signal; the gate of the second transistor receives the first clock pulse signal due to the electrical coupling relationship, and the source/drain of the second transistor is electrically coupled to the drain/drain of the first transistor source, and the drain/source of the second transistor receives the start pulse signal due to the electrical coupling relationship; the gate of the third transistor is electrically coupled to the drain/source of the first transistor, and the source of the third transistor The /drain is used to output the gate driving signal, and the drain/source of the third transistor receives the second clock pulse signal due to the electrical coupling relationship.
在本发明的一实施例中,上述的第三晶体管的源/漏极进一步通过另一耦合电容电性耦接至第三晶体管的栅极。In an embodiment of the present invention, the source/drain of the above-mentioned third transistor is further electrically coupled to the gate of the third transistor through another coupling capacitor.
在本发明的一实施例中,上述的多个晶体管还包括第四晶体管,其中第四晶体管的栅极电性耦接至第一晶体管的漏/源极,第四晶体管的源/漏极用以输出另一启始脉冲信号,且该第四晶体管的漏/源极电性耦接至第三晶体管的漏/源极或源/漏极。In an embodiment of the present invention, the aforementioned multiple transistors further include a fourth transistor, wherein the gate of the fourth transistor is electrically coupled to the drain/source of the first transistor, and the source/drain of the fourth transistor is connected to to output another start pulse signal, and the drain/source of the fourth transistor is electrically coupled to the drain/source or source/drain of the third transistor.
在本发明的一实施例中,上述的多个晶体管还包括第五晶体管,其中第五晶体管的栅极因电性耦接关系而接收第一时钟脉冲信号,第五晶体管的源/漏极因电性耦接关系而接收第二电源电压且此第二电源电压的电平等于第二时钟脉冲信号的低电平,第五晶体管的漏/源极电性耦接至第三晶体管的源/漏极。In an embodiment of the present invention, the above-mentioned multiple transistors further include a fifth transistor, wherein the gate of the fifth transistor receives the first clock pulse signal due to an electrical coupling relationship, and the source/drain of the fifth transistor is due to Electrically coupled to receive the second power supply voltage and the level of the second power supply voltage is equal to the low level of the second clock pulse signal, the drain/source of the fifth transistor is electrically coupled to the source/source of the third transistor drain.
本发明再一实施例提出的一种移位暂存器,其包括控制电路以及输出电路;其中控制电路因电性耦接关系而接收启始脉冲信号、第一时钟脉冲信号以及电源电压且依据启始脉冲信号及第一时钟脉冲信号产生使能信号,第一时钟脉冲信号的低电平低于电源电压的电平;输出电路接受使能信号的控制并依据第二时钟脉冲信号产生栅极驱动信号,第二时钟脉冲信号与第一时钟脉冲信号互为反相且第二时钟脉冲信号的低电平高于电源电压的电平。Another embodiment of the present invention proposes a shift register, which includes a control circuit and an output circuit; wherein the control circuit receives the start pulse signal, the first clock pulse signal and the power supply voltage due to the electrical coupling relationship, and according to The start pulse signal and the first clock pulse signal generate the enable signal, and the low level of the first clock pulse signal is lower than the level of the power supply voltage; the output circuit accepts the control of the enable signal and generates a gate according to the second clock pulse signal As for the driving signal, the second clock pulse signal and the first clock pulse signal are opposite to each other, and the low level of the second clock pulse signal is higher than the level of the power supply voltage.
在本发明的一实施例中,上述的控制电路包括第一控制晶体管及第二控制晶体管;其中,第一控制晶体管的栅极用以接收第一时钟脉冲信号,第一控制晶体管的源/漏极电性耦接至电源电压,第一控制晶体管的漏/源极通过耦合电容与第一控制晶体管的栅极电性相接;第二控制晶体管的栅极电性耦接至第一控制晶体管的栅极,第二控制晶体管的源/漏极电性耦接至第一控制晶体管的漏/源极且用以输出使能信号,第二控制晶体管的漏/源极用以接收启始脉冲信号。In an embodiment of the present invention, the above-mentioned control circuit includes a first control transistor and a second control transistor; wherein, the gate of the first control transistor is used to receive the first clock pulse signal, and the source/drain of the first control transistor The pole is electrically coupled to the power supply voltage, the drain/source of the first control transistor is electrically connected to the gate of the first control transistor through a coupling capacitor; the gate of the second control transistor is electrically coupled to the first control transistor The gate of the second control transistor, the source/drain of the second control transistor is electrically coupled to the drain/source of the first control transistor and used to output the enable signal, and the drain/source of the second control transistor is used to receive the start pulse Signal.
在本发明的一实施例中,上述的输出电路包括第一输出晶体管,其中第一输出晶体管的栅极用以接收使能信号,第一输出晶体管的源/漏极用以输出栅极驱动信号,且第一输出晶体管的漏/源极用以接收第二时钟脉冲信号。In an embodiment of the present invention, the above-mentioned output circuit includes a first output transistor, wherein the gate of the first output transistor is used to receive the enable signal, and the source/drain of the first output transistor is used to output the gate drive signal , and the drain/source of the first output transistor is used for receiving the second clock pulse signal.
在本发明的一实施例中,上述的输出电路还包括第二输出晶体管以产生第二启始脉冲信号,其中第二输出晶体管的栅极电性耦接至第一输出晶体管的栅极,第二输出晶体管的源/漏极用以输出第二启始脉冲信号,且第二输出晶体管的漏/源极电性耦接至第一输出晶体管的源/漏极或漏/源极。In an embodiment of the present invention, the above-mentioned output circuit further includes a second output transistor for generating a second start pulse signal, wherein the gate of the second output transistor is electrically coupled to the gate of the first output transistor, and the second output transistor is electrically coupled to the gate of the first output transistor. The source/drain of the two output transistors is used to output the second start pulse signal, and the drain/source of the second output transistor is electrically coupled to the source/drain or the drain/source of the first output transistor.
在本发明的一实施例中,上述的移位暂存器还包括重置电路,其中重置电路接收第一时钟脉冲信号的控制以将输出电路的栅极驱动信号的输出端的电位拉至第二电源电压,且第二电源电压的电平等于第二时钟脉冲信号的低电平。In an embodiment of the present invention, the above-mentioned shift register further includes a reset circuit, wherein the reset circuit receives the control of the first clock pulse signal to pull the potential of the output terminal of the gate drive signal of the output circuit to the first Two power supply voltages, and the level of the second power supply voltage is equal to the low level of the second clock pulse signal.
本发明另一实施例提出的一种移位暂存器,其包括控制电路以及第一输出晶体管;其中,控制电路具有启始脉冲信号输入端、第一时钟脉冲信号输入端及电源电压输入端,且包括第一控制晶体管及第二控制晶体管;第一控制晶体管的栅极电性耦接至第一时钟脉冲信号输入端,第一控制晶体管的源/漏极电性耦接至电源电压输入端,且第一控制晶体管的漏/源极通过耦合电容与第一控制晶体管的栅极电性相接;第二控制晶体管的栅极电性耦接至第一时钟脉冲信号输入端,第二控制晶体管的源/漏极电性耦接至第一控制晶体管的漏/源极,且第二控制晶体管的漏/源极电性耦接至启始脉冲信号输入端;第一输出晶体管的栅极电性耦接至第一控制晶体管的漏/源极,第一输出晶体管的源/漏极作为栅极驱动信号输出端,且第一输出晶体管的漏/源极作为第二时钟脉冲信号输入端。另外,第一控制晶体管、第二控制晶体管以及第一输出晶体管均是负临界电压晶体管。Another embodiment of the present invention proposes a shift register, which includes a control circuit and a first output transistor; wherein, the control circuit has a start pulse signal input terminal, a first clock pulse signal input terminal, and a power supply voltage input terminal , and includes a first control transistor and a second control transistor; the gate of the first control transistor is electrically coupled to the first clock signal input terminal, and the source/drain of the first control transistor is electrically coupled to the power supply voltage input terminal, and the drain/source of the first control transistor is electrically connected to the gate of the first control transistor through a coupling capacitor; the gate of the second control transistor is electrically coupled to the first clock pulse signal input terminal, and the second The source/drain of the control transistor is electrically coupled to the drain/source of the first control transistor, and the drain/source of the second control transistor is electrically coupled to the start pulse signal input terminal; the gate of the first output transistor The pole is electrically coupled to the drain/source of the first control transistor, the source/drain of the first output transistor is used as the gate drive signal output terminal, and the drain/source of the first output transistor is used as the second clock pulse signal input end. In addition, the first control transistor, the second control transistor and the first output transistor are all negative threshold voltage transistors.
在本发明的一实施例中,上述的第一输出晶体管的源/漏极进一步通过耦合电容与第一输出晶体管的栅极电性相接。In an embodiment of the present invention, the source/drain of the above-mentioned first output transistor is further electrically connected to the gate of the first output transistor through a coupling capacitor.
在本发明的一实施例中,上述的移位暂存器还包括第二输出晶体管,其中第二输出晶体管的栅极电性耦接至控制电路的第一控制晶体管的漏/源极,第二输出晶体管的源/漏极作为启始脉冲信号输出端,且第二输出晶体管的漏/源极电性耦接至栅极驱动信号输出端或第二时钟脉冲信号输入端,并且第二输出晶体管是负临界电压晶体管。In an embodiment of the present invention, the above-mentioned shift register further includes a second output transistor, wherein the gate of the second output transistor is electrically coupled to the drain/source of the first control transistor of the control circuit. The source/drain of the second output transistor is used as the start pulse signal output end, and the drain/source of the second output transistor is electrically coupled to the gate drive signal output end or the second clock pulse signal input end, and the second output The transistors are negative threshold voltage transistors.
在本发明的一实施例中,上述的移位暂存器还包括重置晶体管,其中重置晶体管的栅极电性耦接至控制电路的第一时钟脉冲信号输入端,重置晶体管的源/漏极作为另一电源电压输入端,且重置晶体管的漏/源极电性耦接至栅极驱动信号输出端,并且重置晶体管是负临界电压晶体管。In an embodiment of the present invention, the above-mentioned shift register further includes a reset transistor, wherein the gate of the reset transistor is electrically coupled to the first clock signal input terminal of the control circuit, and the source of the reset transistor The /drain is used as another power supply voltage input terminal, and the drain/source of the reset transistor is electrically coupled to the gate driving signal output terminal, and the reset transistor is a negative threshold voltage transistor.
本发明实施例借由对移位暂存器的电路结构及其操作过程进行特定设计,使得移位暂存器的各个晶体管采用高载流子迁移率的半导体材质后仍可正常操作,以至于本发明实施例提出的移位暂存器的电路结构可达成有效缩小晶体管尺寸以及降低功率消耗的功效。In the embodiment of the present invention, by specifically designing the circuit structure and operation process of the shift register, each transistor of the shift register can still operate normally after using a semiconductor material with high carrier mobility, so that The circuit structure of the shift register proposed by the embodiment of the present invention can effectively reduce the transistor size and reduce power consumption.
为让本发明的上述和其他目的、特征和优点能更明显易懂,下文特举优选实施例,并配合所附附图,作详细说明如下。In order to make the above and other objects, features and advantages of the present invention more comprehensible, preferred embodiments will be described in detail below together with the accompanying drawings.
附图说明 Description of drawings
图1为相关于本发明第一实施例的一种移位暂存器的电路结构图。FIG. 1 is a circuit structure diagram of a shift register related to the first embodiment of the present invention.
图2为相关于本发明第一实施例的多个信号的时序图。FIG. 2 is a timing diagram of various signals related to the first embodiment of the present invention.
图3为相关于本发明第一实施例的另一种移位暂存器的电路结构图。FIG. 3 is a circuit structure diagram of another shift register related to the first embodiment of the present invention.
图4为相关于本发明第二实施例的一种移位暂存器的电路结构图。FIG. 4 is a circuit structure diagram of a shift register related to the second embodiment of the present invention.
其中,附图标记说明如下:Wherein, the reference signs are explained as follows:
10、20:移位暂存器10, 20: shift register
12、22:控制电路12, 22: Control circuit
14、24:输出电路14, 24: output circuit
T11、T21、T22、T41、T31:晶体管T11, T21, T22, T41, T31: Transistors
Cc、Cb:耦合电容Cc, Cb: coupling capacitance
26:重置电路26: reset circuit
ST(n-1)、ST(n):启始脉冲信号ST(n-1), ST(n): start pulse signal
XCK、CK:时钟脉冲信号XCK, CK: clock pulse signal
VSS、VSS1、VSS2:电源电压VSS, VSS1, VSS2: supply voltage
Q(n):使能信号Q(n): enable signal
G(n):栅极驱动信号G(n): gate drive signal
具体实施方式 Detailed ways
参见图1,其示出相关于本发明第一实施例提出的一种移位暂存器的电路结构图。如图1所示,移位暂存器10包括控制电路12以及输出电路14。在此说明的是,多个级串联耦接的移位暂存器可以形成一栅极驱动电路(未示出),例如阵列上栅极驱动电路(Gate Driver On Array,GOA),而本实施例的移位暂存器10可为这些级串联耦接的移位暂存器中的任意一级。Referring to FIG. 1 , it shows a circuit structure diagram of a shift register related to the first embodiment of the present invention. As shown in FIG. 1 , the
具体地,控制电路12包括晶体管T11、T41及耦合电容Cc,晶体管T11、T41均为负临界电压晶体管,例如是采用高载流子迁移率的半导体材质的晶体管。其中,晶体管T41的栅极作为时钟脉冲信号输入端以接收时钟脉冲信号XCK,晶体管T41的源/漏极电性耦接至电源电压VSS以作为电源电压输入端,晶体管T41的漏/源极作为使能信号Q(n)的输出端且通过耦合电容Cc与晶体管T41的栅极电性相接;晶体管T11的栅极与晶体管T41的栅极电性相接以接受时钟脉冲信号XCK的控制,晶体管T11的源/漏极电性耦接至晶体管T41的漏/源极,晶体管T11的漏/源极作为启始脉冲信号输入端以接收启始脉冲信号ST(n-1)。Specifically, the
输出电路14包括晶体管T21、T22以及耦合电容Cb,晶体管T21、T22均为负临界电压晶体管,例如是采用高载流子迁移率的半导体材质的晶体管。其中,晶体管T21作为栅极驱动信号G(n)的输出晶体管,而晶体管T22作为另一启始脉冲信号ST(n)的输出晶体管。具体地,晶体管T21的栅极电性耦接至控制电路12的晶体管T41的漏/源极,晶体管T21的漏/源极作为时钟脉冲信号输入端以接收另一时钟脉冲信号CK,晶体管T21的源/漏极作为栅极驱动信号输出端以输出栅极驱动信号G(n)且较佳地通过耦合电容Cb与晶体管T21的栅极电性相接;晶体管T22的栅极电性耦接至控制电路12的晶体管T41的漏/源极,晶体管T22的漏/源极电性耦接至晶体管T21的漏/源极以接收时钟脉冲信号CK,晶体管T22的源/漏极作为启始脉冲信号输出端以输出启始脉冲信号ST(n)。The
在此,需要说明的是,当移位暂存器10作为多个级串联耦接的移位暂存器中的最后一级时,通常在输出电路14中可不设置晶体管T22来产生启始脉冲信号ST(n);另外,本领域技术人员还可根据设计时的考虑,省略掉耦合电容Cb。Here, it should be noted that when the
下面将结合图1及图2具体描述相关于本发明第一实施例的移位暂存器10的操作过程,图2示出启始脉冲信号ST(n-1)、时钟脉冲信号XCK,CK、栅极驱动信号G(n)以及使能信号Q(n)的时序图;在此,时钟脉冲信号XCK与时钟脉冲信号CK互为反相,也即当时钟脉冲信号XCK为高电平时,时钟脉冲信号CK为低电平,反之当时钟脉冲信号CK为高电平时,时钟脉冲信号XCK为低电平;并且,时钟脉冲信号XCK的低电平低于电源电压VSS的电平,而时钟脉冲信号CK的低电平高于电源电压VSS的电平,以至于各个负临界电压晶体管T11、T41、T21及T22于截止状态下,其栅极的电位低于其源/漏的电位以实现较小的关电流。The operation process of the
具体地,当启始脉冲信号ST(n-1)与时钟脉冲信号XCK均为高电平时,时钟脉冲信号CK为低电平,控制电路12中的晶体管T11及T41导通,使能信号Q(n)被拉高至预设电位并对输出电路14中的耦合电容Cb进行充电以使输出电路14中的晶体管T21、T22导通。接下来,启始脉冲信号ST(n-1)与时钟脉冲信号XCK均跳变为低电平,由于时钟脉冲信号XCK的低电平低于电源电压VSS的电平,控制电路中的晶体管T11及T41有效截止,而使能信号Q(n)的电平因耦合电容Cc的反向耦合作用而被稍微拉低。Specifically, when both the start pulse signal ST(n-1) and the clock signal XCK are at high level, the clock signal CK is at low level, the transistors T11 and T41 in the
之后,时钟脉冲信号CK由低电平跳变为高电平,输出电路14中的晶体管T21的源/漏极依据输入的时钟脉冲信号CK而输出栅极驱动信号G(n)(也即栅极驱动脉冲),同时,输出电路14中的晶体管T22的源/漏极依据输入的时钟脉冲信号CK而输出启始脉冲信号ST(n)以作为后一级移位暂存器的启始脉冲信号;此时,使能信号Q(n)的电平因耦合电容Cb的两端电压相连续的特性而被进一步推高,从而使得晶体管T21的开电流增大。接下来,时钟脉冲信号CK跳变为低电平,晶体管T21、T22的源/漏极的电位均拉低至与时钟脉冲信号CK的低电平相等。Afterwards, the clock pulse signal CK jumps from low level to high level, and the source/drain of the transistor T21 in the
然后,时钟脉冲信号XCK跳变为高电平,控制电路12中的晶体管T11、T41导通,使能信号Q(n)通过晶体管T41放电至电源电压VSS,以至于输出电路14中的晶体管T21、T22的栅极的电位均低于其源/漏极的电位,使得晶体管T21、T22被有效截止。接下来,时钟脉冲信号XCK跳变为低电平,因耦合电容Cc的反向耦合作用,使得使能信号Q(n)被拉至更低电平。之后,当时钟脉冲信号CK再次跳变为高电平时,使能信号Q(n)的电平不会超过电源电压VSS,以至于输出电路14中的晶体管T21、T22能保持在有效截止状态。Then, the clock pulse signal XCK jumps to a high level, the transistors T11 and T41 in the
另外,本发明第一实施例的移位暂存器10的电路结构并不限于图1所示,还可采用其他电路结构例如图3所示。具体地,图3所示的移位暂存器10的电路结构与图1所示的移位暂存器10基本相同,不同之处在于:图3中的晶体管T22的漏/源极电性耦接至晶体管T21的源/漏极,而非如图1所示的电性耦接至晶体管T21的漏/源极并直接接收时钟脉冲信号CK。In addition, the circuit structure of the
参见图4,其示出相关于本发明第二实施例提出的一种移位暂存器的电路结构图。如图4所示,移位暂存器20包括控制电路22、输出电路24以及重置电路26。在此说明的是,多个级串联耦接的移位暂存器可以形成一栅极驱动电路(未示出),例如阵列上栅极驱动电路,而本实施例的移位暂存器20可为这些级串联耦接的移位暂存器中的任意一级。Referring to FIG. 4 , it shows a circuit structure diagram of a shift register related to the second embodiment of the present invention. As shown in FIG. 4 , the
具体地,控制电路22包括晶体管T11、T41及耦合电容Cc,晶体管T11、T41均为负临界电压晶体管,例如是采用高载流子迁移率的半导体材质的晶体管。其中,晶体管T41的栅极作为时钟脉冲信号输入端以接收时钟脉冲信号XCK,晶体管T41的源/漏极电性耦接至电源电压VSS1以作为电源电压输入端,晶体管T41的漏/源极作为使能信号Q(n)的输出端且通过耦合电容Cc与晶体管T41的栅极电性相接;晶体管T11的栅极与晶体管T41的栅极电性相接以接受时钟脉冲信号XCK的控制,晶体管T11的源/漏极电性耦接至晶体管T41的漏/源极,晶体管T11的漏/源极作为启始脉冲信号输入端以接收启始脉冲信号ST(n-1)。Specifically, the
输出电路24包括晶体管T21、T22以及耦合电容Cb,晶体管T21、T22均为负临界电压晶体管,例如是采用高载流子迁移率的半导体材质的晶体管。其中,晶体管T21作为栅极驱动信号G(n)的输出晶体管,而晶体管T22作为另一启始脉冲信号ST(n)的输出晶体管。具体地,晶体管T21的栅极电性耦接至控制电路22的晶体管T41的漏/源极,晶体管T21的漏/源极作为时钟脉冲信号输入端以接收另一时钟脉冲信号CK,晶体管T21的源/漏极作为栅极驱动信号输出端以输出栅极驱动信号G(n)且较佳地通过耦合电容Cb与晶体管T21的栅极电性相接;晶体管T22的栅极电性耦接至控制电路22的晶体管T41的漏/源极,晶体管T22的漏/源极电性耦接至晶体管T21的漏/源极以接收时钟脉冲信号CK,晶体管T22的源/漏极作为启始脉冲信号输出端以输出启始脉冲信号ST(n)。The
重置电路26包括晶体管T31,其是负临界电压晶体管,例如是采用高载流子迁移率的半导体材质的晶体管。晶体管T31的栅极接收时钟脉冲信号XCK,晶体管T31的源/漏极电性耦接至电源电压VSS2,晶体管T31的漏/源极电性耦接至输出电路24中的晶体管T21的源/漏极以将其的电位拉至电源电压VSS2。The
于本发明第二实施例中,为使得各个负临界电压晶体管T11、T41、T21、T22及T31于截止状态下,其栅极的电位低于其源/漏的电位以实现较小的关电流,时钟脉冲信号CK与XCK设置为互为反相,电源电压VSS1的电平设置为高于时钟脉冲信号XCK的低电平且低于时钟脉冲信号CK的低电平,电源电压VSS2的电平设置为等于时钟脉冲信号CK的低电平。In the second embodiment of the present invention, in order to make each of the negative threshold voltage transistors T11, T41, T21, T22 and T31 in the cut-off state, the potential of the gate is lower than the potential of the source/drain to achieve a smaller off-current , the clock pulse signals CK and XCK are set to be opposite to each other, the level of the power supply voltage VSS1 is set to be higher than the low level of the clock pulse signal XCK and lower than the low level of the clock pulse signal CK, and the level of the power supply voltage VSS2 Set to be equal to the low level of the clock pulse signal CK.
在此,需要说明的是,移位暂存器20与第一实施例中的移位暂存器10的操作过程大致相同,故在此不再赘述。此外,当移位暂存器20作为多个级串联耦接的移位暂存器中的最后一级时,通常在输出电路24中可不设置晶体管T22来产生启始脉冲信号ST(n);另外,本领域技术人员还可根据设计时的考虑,省略掉耦合电容Cb。Here, it should be noted that the operation process of the
综上所述,本发明实施例借由对移位暂存器的电路结构及其操作过程进行特定设计,使得移位暂存器的各个晶体管为负临界电压晶体管,例如是采用高载流子迁移率的半导体材质的晶体管时仍可正常操作,以至于本发明实施例提出的移位暂存器的电路结构可达成有效缩小晶体管尺寸以及降低功率消耗的功效。To sum up, the embodiments of the present invention make each transistor of the shift register a negative threshold voltage transistor by specifically designing the circuit structure and operation process of the shift register, for example, using high-carrier Transistors made of semiconductor material with high mobility can still operate normally, so that the circuit structure of the shift register proposed by the embodiment of the present invention can effectively reduce the size of the transistor and reduce power consumption.
虽然本发明已以优选实施例揭示如上,然其并非用以限定本发明,任何本领域普通技术人员,在不脱离本发明的精神和范围内,当可作些许的更动与润饰,因此本发明的保护范围当视所附的权利要求所界定的范围为准。Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Anyone skilled in the art can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, this The scope of protection of the invention should be determined by the scope defined by the appended claims.
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