CN101783280B - Cleaning method of semiconductor machine - Google Patents
Cleaning method of semiconductor machine Download PDFInfo
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- CN101783280B CN101783280B CN200910002545A CN200910002545A CN101783280B CN 101783280 B CN101783280 B CN 101783280B CN 200910002545 A CN200910002545 A CN 200910002545A CN 200910002545 A CN200910002545 A CN 200910002545A CN 101783280 B CN101783280 B CN 101783280B
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- reative cell
- cleaning
- semiconductor board
- clean
- flow
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- 238000004140 cleaning Methods 0.000 title claims abstract description 70
- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000007789 gas Substances 0.000 claims abstract description 62
- 238000002347 injection Methods 0.000 claims abstract description 25
- 239000007924 injection Substances 0.000 claims abstract description 25
- 239000012495 reaction gas Substances 0.000 claims abstract description 23
- 230000001174 ascending effect Effects 0.000 claims description 56
- 239000001257 hydrogen Substances 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000001307 helium Substances 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 230000000694 effects Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
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- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a cleaning method of a semiconductor machine. First, a first cleaning step is performed on the reaction chamber, including introducing a cleaning gas into the reaction chamber through a short reaction gas injection pipe to generate plasma of the cleaning gas in the reaction chamber. Next, a cleaning step is performed on the long reaction gas injection tube, including introducing a cleaning gas into the reaction chamber through the long reaction gas injection tube. The reaction chamber is then subjected to a second cleaning step comprising passing a plasma of a cleaning gas into the reaction chamber via a short reaction gas injection tube. The cleaning method of the semiconductor machine can effectively clean the interior of the reaction chamber and the inner wall of the reaction gas injection pipe. Therefore, the deposits deposited in the reaction chamber and on the inner wall of the reaction gas injection pipe can be prevented from falling onto the chip, and the yield of the chip are greatly improved.
Description
Technical field
The present invention relates to a kind of semiconductor science and technology, and particularly relate to a kind of clean method of semiconductor board.
Background technology
In semiconductor technology, no matter be that chip is carried out depositing operation or etch process, employed reacting gas also can be deposited on the inner surface of the reative cell of semiconductor board, and forms the source of particulate (particle) in the reative cell.These particulates may drop on the chip of subsequent treatment, make chip submit an expense account, and significantly reduce the yield of chip.Therefore, after semiconductor board was handled the chip of some, just must carry out clean, to remove deposit attached to the reative cell inner surface to reative cell.
In general, can be with Nitrogen trifluoride (NF
3) come chamber cleaning for clean air (clean gas).In detail, Nitrogen trifluoride is fed in the reative cell, utilize the deposit of Nitrogen trifluoride etching deposit, to reach the purpose of chamber cleaning in reative cell dome (dome) and reaction chamber wall.It should be noted that; Semiconductor board also comprises a plurality of reacting gas ascending pipes (processgas injector) in order to reacting gas to reative cell to be provided; And reacting gas also can form deposit at reacting gas ascending pipe inwall, and these deposits possibly fall on the chip.Yet present reative cell cleaning procedure feeds clean air by special cleaning ascending pipe, and it is cleaning activity gas injection tube inwall (like accompanying drawing) effectively, causes and produces the yield reduction.
Therefore, the clean method that this field need a kind of semiconductor board, cleaning activity chamber interior and reacting gas ascending pipe inwall effectively are to promote the productive rate and the yield of chip.
Summary of the invention
The present invention provides a kind of clean method of semiconductor board, with cleaning activity chamber interior and reacting gas ascending pipe inwall effectively.
The present invention proposes a kind of clean method of semiconductor board.At first, reative cell is carried out first cleaning, comprise clean air is fed in the reative cell via the short reaction gas injection tube, in reative cell, to produce the plasma of clean air.Then, long reacting gas ascending pipe is carried out cleaning, comprise clean air is fed in the reative cell via long reacting gas ascending pipe.Then, reative cell is carried out second cleaning, comprise that the plasma with clean air feeds in the reative cell via the short reaction gas injection tube.
In an embodiment of the present invention, above-mentioned clean air comprises Nitrogen trifluoride.
In an embodiment of the present invention, the above-mentioned clean air that reative cell is carried out first cleaning has first flow, and the clean air that long reacting gas ascending pipe is carried out cleaning has second flow, and wherein second flow is 1/9 to 1/5 of a first flow.
In an embodiment of the present invention; The above-mentioned plasma that reative cell is carried out the clean air of second cleaning has first flow; The clean air that long reacting gas ascending pipe is carried out cleaning has second flow, and wherein second flow is 1/14 to 1/9 of a first flow.
In an embodiment of the present invention, the flow of the above-mentioned clean air that long reacting gas ascending pipe is carried out cleaning between 150 to 250sccm.
In an embodiment of the present invention, the flow of the above-mentioned clean air that reative cell is carried out first cleaning is between 1000 to 2000sccm.
In an embodiment of the present invention, the flow of the plasma of the above-mentioned clean air that reative cell is carried out second cleaning is between 1500 to 2500sccm.
In an embodiment of the present invention, above-mentionedly long reacting gas ascending pipe is carried out cleaning also comprise helium is fed in the reative cell.
In an embodiment of the present invention, above-mentionedly long reacting gas ascending pipe is carried out cleaning also comprise hydrogen is fed in the reative cell.
In an embodiment of the present invention, above-mentionedly reative cell is carried out first cleaning also comprise oxygen is fed in the reative cell.
In an embodiment of the present invention, above-mentioned long reacting gas ascending pipe has closed end, and clean air is to inject reative cell via the through hole of the tube wall of long reacting gas ascending pipe.
In an embodiment of the present invention, above-mentioned short reaction gas injection tube centers on the central shaft of reative cell with long reacting gas ascending pipe and is provided with.
In an embodiment of the present invention, comprise also reative cell protected step that it comprises hydrogen is fed in the reative cell.
In an embodiment of the present invention, above-mentionedly protect step also to comprise to reative cell oxygen is fed in the reative cell.
In an embodiment of the present invention, the flow of the above-mentioned hydrogen of reative cell being protected step is between 1000 to 2000sccm.
In an embodiment of the present invention, above-mentioned long reacting gas ascending pipe carries out cleaning and lasts between 15 seconds to 25 seconds.
In an embodiment of the present invention, above-mentionedly reative cell is carried out second cleaning last between 160 seconds to 200 seconds.
In an embodiment of the present invention, above-mentioned when reative cell is carried out first cleaning, the pressure of setting reative cell is between 0.9 to 1.1 holder (Torr).
In an embodiment of the present invention, above-mentioned when long reacting gas ascending pipe is carried out cleaning, the pressure of setting reative cell is between 0.9 to 1.1 holder.
In an embodiment of the present invention, above-mentioned when reative cell is carried out second cleaning, the pressure of setting reative cell is between 5.5 to 6.5 holders.
Based on above-mentioned, the clean method of semiconductor board of the present invention is cleaning activity chamber interior and reacting gas ascending pipe inwall effectively.Thus, the deposit that can avoid being deposited on reative cell inside and reacting gas ascending pipe inwall falls on the chip, with productive rate and the yield that significantly promotes chip.
For letting the above-mentioned feature and advantage of the present invention can be more obviously understandable, hereinafter is special lifts embodiment, and conjunction with figs. elaborates as follows.
Description of drawings
Fig. 1 is the sketch map according to a kind of semiconductor board that embodiments of the invention illustrated.
Fig. 2 is the schematic flow sheet according to the clean method of a kind of semiconductor board that embodiments of the invention illustrated.
Description of reference numerals
10: semiconductor board
20: reative cell
22: the reative cell dome
24: reaction chamber wall
30: the short reaction gas injection tube
40: long reacting gas ascending pipe
50: special cleaning ascending pipe
CE: closed end
H: through hole
S102, S104, S106, S108: step
Embodiment
Fig. 1 is the sketch map according to a kind of semiconductor board that embodiments of the invention illustrated.In the present embodiment, semiconductor board 10 comprises reative cell 20, short reaction gas injection tube 30 and long reacting gas ascending pipe 40.Reative cell 20 for example is to carry out high density plasma CVD (it comprises reative cell dome (dome) 22 and reaction chamber wall 24 for High-density plasma chemical vapor deposition, reative cell HDPCVD).Short reaction gas injection tube 30 for example is to be provided with around the central shaft of reative cell 20 with long reacting gas ascending pipe 40, in transport of reactant gases body and clean air to reative cell 20.Short reaction gas injection tube 30 for example is interconnected with long reacting gas ascending pipe 40, and the angle of inclination of short reaction gas injection tube 30 and long reacting gas ascending pipe 40 angle of vertical line (promptly with) can be different.What pay special attention to is; In the present embodiment; Short reaction gas injection tube 30 for example is to have closed end CE with long reacting gas ascending pipe 40, and just clean air for example is via the through hole H injection reative cell of short reaction gas injection tube 30 with the tube wall of long reacting gas ascending pipe 40.Wherein, the length of short reaction gas injection tube for example is 30mm to 40mm, and the length of long reacting gas ascending pipe for example is 200mm to 220mm.Moreover in the present embodiment, semiconductor board 10 also comprises special cleaning ascending pipe 50.
The method that the semiconductor board of Fig. 1 is cleaned is described below.Fig. 2 is the schematic flow sheet according to the clean method of a kind of semiconductor board that embodiments of the invention illustrated.
Please at first, carry out step S102 simultaneously with reference to Fig. 1 and Fig. 2, reative cell 20 is carried out first cleaning, comprise clean air is fed in the reative cell 20 via short reaction gas injection tube 30, in reative cell 20, to produce the plasma of clean air.The main purpose of this step is to remove the deposit that is deposited on reative cell dome 22, for example silica.Clean air for example is a Nitrogen trifluoride, and its flow for example is between about 1000 to 2000sccm (standard cubic centimeters per minute), is preferably 1500sccm.When carrying out this step S102, the pressure of setting reative cell for example is between about 0.9 to 1.1 holder (Torr), is preferably 1 holder.And, for example be that the high frequency power (high frequency power) of reative cell is set between about 2500 to 3500 watts (W), be preferably 3000 watts, the low frequency power (low frequency power) of reative cell is set for about 0 watt.In the present embodiment, detecting the method whether this step S102 accomplish is the endpoint detecting method.Moreover, in an embodiment, when carrying out this step S102, also can optionally oxygen be fed in the reative cell.The flow of oxygen for example is between about 140 to 160sccm, is preferably 150sccm.
Then, carry out step S104, long reacting gas ascending pipe 40 is carried out cleaning, comprise clean air is fed in the reative cell via long reacting gas ascending pipe 40.It should be noted that this step is through making Nitrogen trifluoride remove the deposit that is deposited on long reacting gas ascending pipe 40 inwalls through long reacting gas ascending pipe 40 lentamente.Therefore, the flow of the clean air of step S104 for example is the flow that is lower than the clean air of step S102.For instance, the clean air of step S102 has first flow, and the clean air of step S104 has second flow, and wherein second flow for example is 1/9 to 1/5 of a first flow.In this step S104, clean air for example is a Nitrogen trifluoride, and its flow for example is between about 150 to 250sccm, is preferably 200sccm.When carrying out this step S104, the pressure of setting reative cell for example is between about 0.9 to 1.1 holder (Torr), is preferably 1 holder.And, for example be that the high frequency power of reative cell is set between about 1000 to 2000 watts (W), be preferably 1500 watts, the low frequency power of reative cell is set between approximately between to 2700 to 3700 watts (W), be preferably 3200 watts.In the present embodiment, this step S104 lasts between 15 seconds to 25 seconds, is preferably about 20 seconds.In addition, in an embodiment, when carrying out this step S104, also can optionally helium and hydrogen be fed in the reative cell via special cleaning ascending pipe 50.Hydrogen can react removing unnecessary fluorine with fluorine ion in cleaning course, and helium can be stablized the chemical reaction during the cleaning course and reduce pressure and changes.Wherein, the flow of helium for example is between about 150 to 250sccm, is preferably 200sccm; The flow of hydrogen for example is between about 450 to 550sccm, is preferably 500sccm.
Special one carry be, in the present embodiment, long reacting gas ascending pipe 40 for example is to have a closed end CE, just clean air is via the through hole H of the tube wall of long reacting gas ascending pipe 40 and inject reative cell 20.In general, the deposit that is deposited on long reacting gas ascending pipe inwall is difficult for removing, and especially has the long reacting gas ascending pipe of closed end, yet step S104 can clean long reacting gas ascending pipe 40 inwalls with closed end CE effectively.Moreover; Be with elder generation reative cell 20 to be carried out first cleaning in the present embodiment, longer reacting gas ascending pipe 40 being carried out cleaning is example, but in other embodiments; Also can carry out cleaning to long reacting gas ascending pipe earlier, again reative cell carried out first cleaning.
Then, carry out step S106, reative cell 20 is carried out second cleaning, comprise that the plasma of the clean air that one remote plasma source is produced feeds in the reative cell 20 via short reaction gas injection tube 30.The main purpose of this step is to remove the deposit that is deposited on reaction chamber wall 24, for example silica.In the present embodiment, the plasma of clean air comprises the plasma of Nitrogen trifluoride, and its flow for example is between about 1500 to 2500sccm, is preferably 2000sccm.It should be noted that in an embodiment the plasma of the clean air among the step S106 has first flow, the clean air of step S104 has second flow, and wherein second flow for example is 1/14 to 1/9 of a first flow.Moreover when carrying out this step S106, the pressure of setting reative cell for example is between about 5.5 to 6.5 holders (Torr), is preferably 6 holders.And, for example be that the high frequency power of reative cell is set for about 0 watt, the low frequency power of reative cell also can be set for about 0 watt.In the present embodiment, this step S106 lasts between 160 seconds to 200 seconds, is preferably about 180 seconds.
Then, after finishing all cleanings, can optionally carry out step S108, reative cell 20 is protected step, it comprises hydrogen is fed in the reative cell 20.In the present embodiment, for example be that hydrogen is fed in the reative cell 20 via short reaction gas injection tube 30.This step can be considered a recovery (recover) step, utilizes hydrogen and above-mentioned employed fluorine-containing clean air effect, and removes the clean air in the reative cell 20, avoids the follow-up technology of clean air influence.In this step S108, the flow of hydrogen for example is between about 1000 to 2000sccm, is preferably 1500sccm.When carrying out this step S108, the pressure of setting reative cell for example is between about 0.9 to 1.1 holder (Torr), is preferably 1 holder.And, for example be that the high frequency power of reative cell is set between about 2800 to 3800 watts (W), be preferably 3300 watts, the low frequency power of reative cell is set for about 0 watt.In the present embodiment, step S108 lasts between 140 seconds to 180 seconds, is preferably about 160 seconds.In addition, in this step S108, also can oxygen be fed in the reative cell selectivity.The flow of oxygen for example is between about 350 to 450sccm, is preferably 400sccm.
In sum, the clean method of semiconductor board of the present invention cleaning activity chamber interior and reacting gas ascending pipe inwall effectively.Thus, can remove the deposit that is deposited on reative cell dome, reaction chamber wall and reacting gas ascending pipe inwall, fall on the chip, and then significantly promote the yield and the productive rate of chip to avoid deposit.In addition; The clean method of semiconductor board of the present invention can solve the problem that long reacting gas ascending pipe inwall is difficult for cleaning; And in same cleaning procedure, accomplish the cleaning of reative cell and reacting gas ascending pipe, with the required consumed time of reduction clean semiconductor board.
Though the present invention discloses as above with embodiment; Right its is not in order to limit the present invention; Those of ordinary skill in the technical field under any; Do not breaking away from the spirit and scope of the present invention, when doing a little change and retouching, so protection scope of the present invention is as the criterion when looking appended the claim person of defining.
Claims (19)
1. the clean method of a semiconductor board comprises:
Reative cell is carried out first cleaning, comprise clean air is fed in this reative cell via the short reaction gas injection tube, in this reative cell, to produce the plasma of this clean air;
Long reacting gas ascending pipe is carried out cleaning, comprise this clean air is fed in this reative cell via this long reacting gas ascending pipe; And
This reative cell is carried out second cleaning, comprise that the plasma with this clean air feeds in this reative cell via this short reaction gas injection tube.
2. the clean method of semiconductor board as claimed in claim 1, wherein this clean air comprises Nitrogen trifluoride.
3. the clean method of semiconductor board as claimed in claim 1; This clean air that wherein this reative cell is carried out first cleaning has first flow; This clean air that this long reacting gas ascending pipe is carried out cleaning has second flow, and wherein this second flow is 1/9 to 1/5 of this first flow.
4. the clean method of semiconductor board as claimed in claim 1; The plasma that wherein this reative cell is carried out this clean air of second cleaning has first flow; This clean air that this long reacting gas ascending pipe is carried out cleaning has second flow, and wherein this second flow is 1/14 to 1/9 of this first flow.
5. the clean method of semiconductor board as claimed in claim 1, the flow of this clean air that wherein this long reacting gas ascending pipe is carried out cleaning between 150 to 250sccm.
6. the clean method of semiconductor board as claimed in claim 1, the flow of this clean air that wherein this reative cell is carried out first cleaning is between 1000 to 2000sccm.
7. the clean method of semiconductor board as claimed in claim 1, the flow of plasma of this clean air that wherein this reative cell is carried out second cleaning is between 1500 to 2500sccm.
8. the clean method of semiconductor board as claimed in claim 1 wherein carries out cleaning to this long reacting gas ascending pipe and also comprises in helium and this reative cell of hydrogen feeding.
9. the clean method of semiconductor board as claimed in claim 1 wherein carries out first cleaning to this reative cell and also comprises oxygen is fed in this reative cell.
10. the clean method of semiconductor board as claimed in claim 1, wherein this long reacting gas ascending pipe has closed end, and this clean air is to inject this reative cell via the through hole of the tube wall of this long reacting gas ascending pipe.
11. the clean method of semiconductor board as claimed in claim 1, wherein this short reaction gas injection tube and this long reacting gas ascending pipe center on the central shaft of this reative cell and are provided with.
12. the clean method of semiconductor board as claimed in claim 1 also comprises this reative cell is protected step, it comprises hydrogen is fed in this reative cell.
13. the clean method of semiconductor board as claimed in claim 12 is wherein protected step also to comprise to this reative cell oxygen is fed in this reative cell.
14. the clean method of semiconductor board as claimed in claim 12, wherein the flow of this hydrogen is between 1000 to 2000sccm.
15. the clean method of semiconductor board as claimed in claim 1 wherein carries out cleaning to this long reacting gas ascending pipe and lasts between 15 seconds to 25 seconds.
16. the clean method of semiconductor board as claimed in claim 1 wherein carries out second cleaning to this reative cell and lasts between 160 seconds to 200 seconds.
17. the clean method of semiconductor board as claimed in claim 1, when wherein this reative cell being carried out first cleaning, the pressure of setting reative cell is between 0.9 to 1.1 holder.
18. the clean method of semiconductor board as claimed in claim 1, when wherein this long reacting gas ascending pipe being carried out cleaning, the pressure of setting reative cell is between 0.9 to 1.1 holder.
19. the clean method of semiconductor board as claimed in claim 1, when wherein this reative cell being carried out second cleaning, the pressure of setting reative cell is between 5.5 to 6.5 holders.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910002545A CN101783280B (en) | 2009-01-16 | 2009-01-16 | Cleaning method of semiconductor machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910002545A CN101783280B (en) | 2009-01-16 | 2009-01-16 | Cleaning method of semiconductor machine |
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| CN101783280A CN101783280A (en) | 2010-07-21 |
| CN101783280B true CN101783280B (en) | 2012-09-19 |
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| JP6785809B2 (en) | 2018-02-22 | 2020-11-18 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | Methods for cleaning members in processing vessels, methods for manufacturing semiconductor devices, substrate processing devices, and programs |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1014427A2 (en) * | 1998-12-23 | 2000-06-28 | Applied Materials, Inc. | Processing apparatus having integrated pumping system |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1014427A2 (en) * | 1998-12-23 | 2000-06-28 | Applied Materials, Inc. | Processing apparatus having integrated pumping system |
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| CN101783280A (en) | 2010-07-21 |
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