CN101779543B - Feeding depth control circuit of half-feeding harvester - Google Patents
Feeding depth control circuit of half-feeding harvester Download PDFInfo
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- CN101779543B CN101779543B CN2009100290465A CN200910029046A CN101779543B CN 101779543 B CN101779543 B CN 101779543B CN 2009100290465 A CN2009100290465 A CN 2009100290465A CN 200910029046 A CN200910029046 A CN 200910029046A CN 101779543 B CN101779543 B CN 101779543B
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- voltage grading
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- grading resistor
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- 230000000630 rising effect Effects 0.000 claims description 28
- 230000007423 decrease Effects 0.000 claims description 19
- 238000004804 winding Methods 0.000 claims description 10
- 239000004593 Epoxy Substances 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 230000005669 field effect Effects 0.000 abstract description 5
- 238000013016 damping Methods 0.000 abstract 1
- 235000013339 cereals Nutrition 0.000 description 5
- 238000010891 electric arc Methods 0.000 description 2
- 238000003306 harvesting Methods 0.000 description 2
- 239000004821 Contact adhesive Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000010257 thawing Methods 0.000 description 1
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Abstract
The invention discloses a feeding depth control circuit of a half-feeding harvester and relates to the field of electronic circuits for controlling the feeding depth of the harvester. A direct current power source (1) and a fuse wire (2) are connected in series and then respectively connected with the upper limit and the lower limit of a depth limit travel switch (3) and an A point of a self-resetting switch (4); the depth limit travel switch (3) is respectively connected with voltage grading resistors R1 and R2 and voltage grading resistors R3 and R4 in series and connected to the direct current power source (1); grid electrodes V1 and V2 of field-effect tubes (6) and (10) are respectively connected to nodes G1 and G2 of the voltage grading resistors; a drain electrode and a source electrode of the field-effect tubes (6) and (10) are respectively connected to a B point and an E point of the self-resetting switch (4) and the direct current power source (1); damping diodes (9) and (13) are respectively spanned on the drain electrode and the source electrode of the field-effect tubes (6) and (10); and a direct current motor (5) is connected to shifts C and D of the self-resetting switch (4). The feeding depth control circuit has the advantages of long service life and extremely-low fault rate.
Description
Technical field:
Feeding depth control circuit of half-feeding harvester of the present invention relates to the electronic circuit field that the feeding depth of grain header is controlled.
Background technology:
Grain header afield in harvesting during cereal will according to cereal afield in the height of growth, immediately harvester header is carried out lift adjustment, promptly the height of harvester header will carry out the height adjusting by the grain header operative employee by direct current generator drive reducer output shaft at any time.
Regulated half-feeding harvester feeding depth height in the past and be rising and the decline of always controlling harvester header by self-resetting switch and the forward and backward that adopts two DC relays to control direct current generator, there is following shortcoming in this relay-operated controller:
1, dust and steam easily enter relay inside, make relay contact pollution or oxidation and cause loose contact.
2, the solenoid of relay make the relay contact adhesive with separate very frequent, produce electric arc between the contact, form high temperature, the contact is easily melted and is caused relay damaged, cause relay system depth controller to work, even week age need be changed several relays, thereby influence the harvesting of peasant crops, also increase company's maintenance cost greatly, therefore, should abandon using the harvester header depth controller circuitry of relay system, design new feeding depth control circuit of half-feeding harvester in addition.
Summary of the invention:
The purpose of this invention is to provide a kind of feeding depth control circuit of half-feeding harvester, be made up of dc source, fuse, travel switch, self-resetting switch, direct current generator, two FETs, four voltage grading resistors, two diodes, having solved in the past, the relay contact of half-feeding harvester usefulness relay system feeding depth control circuit produces the electric arc thawing and the problem of damage.
A kind of feeding depth control circuit of half-feeding harvester, it is by the voltage grading resistor R of dc source, fuse, depth limitation travel switch, self-resetting switch, direct current generator, rising FET, two rising usefulness
1, voltage grading resistor R
2, first damper diode, descend with the voltage grading resistor R of FET, two decline usefulness
3, voltage grading resistor R
4Form with second damper diode, dc source "+" utmost point is connected with the upper limit SQ1 of depth limitation travel switch, the lower limit SQ2 of depth limitation travel switch, the A point of self-resetting switch respectively with after fuse is connected; Two voltage grading resistor R of the upper limit SQ1 of depth limitation travel switch and rising usefulness
1, voltage grading resistor R
2Be connected to "-" utmost point of dc source after being in series, rising is connected to two voltage grading resistor R of rising usefulness with the grid V1 of FET
1With voltage grading resistor R
2Between node G1, the B point that drain D 1 and the source S 1 with FET of rising is connected respectively to self-resetting switch and "-" utmost point of dc source, first damper diode is connected across and rises with between the drain D 1 and source S 1 of FET, and drain D 1 is connected with the B point of self-resetting switch; Two voltage grading resistor R of the lower limit SQ2 of depth limitation travel switch and decline usefulness
3, be connected to "-" utmost point of dc source after the voltage grading resistor R4 series connection, descending is connected to two voltage grading resistor R of decline usefulness with the grid V2 of FET
3With voltage grading resistor R
4Between node G2, the E point that drain D 2 and the source S 2 with FET of descending is connected respectively to self-resetting switch and "-" utmost point of dc source, second damper diode is connected across and descends with between the drain D 2 and source S 2 of FET, and drain D 2 is connected with the E point of self-resetting switch; Direct current generator winding two ends are connected to the middle-grade C point and the middle-grade D point of self-resetting switch.
The operation principle of feeding depth control circuit of half-feeding harvester of the present invention is described as follows:
Dc source through fuse with after the A point of self-resetting switch is connected, when " liter " that rises to the ceding of Taiwan pulled in the self-resetting switch interlock, then the BC contact in the self-resetting switch 4 winding points and this 2 winding point of AD contact are communicated with simultaneously, the upper limit SQ1 of depth control this moment travel switch and lower limit SQ2 be normal open simultaneously, DC current is by dc source, fuse, through the AD contact, direct current generator, BC contact and the rising drain D 1 of FET, source S 1 flow back into dc power cathode, at this moment is connected on dc power anode, fuse, the upper limit of depth control travel switch and two voltage grading resistor R of the rising usefulness between the dc power cathode
1And R
2Between node G1, being connected to the grid that rises with FET, and because the voltage grading resistor R of two risings
1And R
2Resistance value equate, then node G1 applies 1/2nd dc source voltage for the grid of rising FET V1, make rising be in the saturation conduction state with FET, then direct current generator just changes, and the ceding of Taiwan is risen, when the ceding of Taiwan rises to the upper limit of depth control travel switch control, the upper limit SQ1 of depth control travel switch disconnects, rising is 0 volt with the grid voltage of FET, rises then to be in closed condition with FET, the direct current generator stall.
When self-resetting switch is pulled " the falling " that descends to the ceding of Taiwan, then AC contact and the DE contact in the self-resetting switch 4 winding points connected simultaneously, this moment depth limitation travel switch upper limit SQ1 and lower limit SQ2 normal open simultaneously, DC current is by dc source, fuse is through self-resetting switch AC contact, direct current generator, the DE contact of self-resetting switch and the decline drain D 2 of FET, source S 2 flow back into the negative pole of dc source, at this moment is connected on dc source, fuse, two voltage grading resistor R of the lower limit SQ2 of depth limitation travel switch and the decline usefulness between the dc power cathode
3And R
4Between node G2 be connected to the grid V2 that descends with FET, and because the voltage grading resistor R of two decline usefulness
3And R
4Resistance value equate, then node G2 applies 1/2nd dc source voltage for the grid V2 that descends with FET, make decline be in the saturation conduction state with FET, then direct current generator counter-rotating, the ceding of Taiwan descends, when the ceding of Taiwan drops to the decline position SQ2 of depth limitation travel switch control, the lower limit SQ2 of depth limitation travel switch disconnects, decline is 0 volt with the grid V2 voltage of FET, descends to being in closed condition with FET, the direct current generator stall.
Above-mentioned rising with and descend with the drain electrode of FET and source electrode between respectively cross-over connection first damper diode and second damper diode are arranged, during shutdown, the electric current of FET release flows to drain electrode by source electrode through diode, damper diode shields.
Feeding depth control circuit of half-feeding harvester advantage of the present invention is as follows:
1, in the circuit field-effect pipe to have switching speed fast, high frequency characteristics is good, Heat stability is good, advantage such as operating current is big, and power output is big.
When 2, above-mentioned electronic type control circuit was worked, FET was on off state, no-spark.
3, the FET of above-mentioned electronic type control circuit, the entire controller that damper diode and voltage grading resistor constitute adopts epoxy sealing, waterproof, vibrationproof.
4,5 amperes of fuses that install additional play antioverloading, the effect of anti-short circuit.
5, above-mentioned electronic type control circuit is installed easy-to-connect, and long service life, fault rate are extremely low.
Description of drawings:
Fig. 1: be the circuit diagram of feeding depth control circuit of half-feeding harvester of the present invention.
Embodiment:
Referring to Fig. 1, feeding depth control circuit of half-feeding harvester by dc source 1, fuse 2, depth limitation travel switch 3, self-resetting switch 4, direct current generator 5, rise with the voltage grading resistor R of FET 6, two rising usefulness
17, voltage grading resistor R
28, first damper diode 9, descend with FET 10, two decline voltage grading resistor R
311, voltage grading resistor R
412 and second damper diode 13 is formed.
As described in Figure 1, "+" utmost point of dc source 1 is connected with fuse 2 one ends, and fuse 2 other ends are connected with the upper limit SQ1 of depth limitation travel switch 3, the lower limit SQ2 of depth limitation travel switch 3 and the A point of self-resetting switch 4 respectively.
Among Fig. 1: the upper limit SQ1 of depth limitation travel switch 3 is in normal open state, and lower limit SQ2 also is in normal open state; Dc source 1 can be accumulator, and the DC voltage scope of dc source 1 is: 18 volts～28 volts; The rated blowing-current of fuse 2 can be 5 amperes.
Shown in the frame of broken lines of Fig. 1 middle and upper part, self-resetting switch 4 is respectively AC contact, BC contact, AD contact and DE contact for the linked switch of 4 winding points is arranged, and it is middle-grade that C point and D point are in, and the C point is connected with direct current generator 5 winding two ends respectively with the D point; After self-resetting switch 4 interlocks, as working as BC contact and AD contact UNICOM simultaneously, then the ceding of Taiwan is risen, shown in " liter " among Fig. 1; As when AC contact and DE contact simultaneously after the UNICOM, then the ceding of Taiwan descends, shown in " falling " among Fig. 1; The rated power of direct current generator 5 is 70 kilowatts, and voltage is 24 volts.
Among Fig. 1, pull when " liter " when self-resetting switch 4, BC contact and AD contact are connected simultaneously, this moment depth limitation travel switch 3 upper limit SQ1 normal open, lower limit SQ2 normal open, the upper limit SQ1 of depth limitation travel switch 3 and two voltage grading resistor R of rising usefulness at this moment
17, voltage grading resistor R
2Then be connected to "-" utmost point of dc source 1 after 8 series connection, form the outside series circuit from "+" utmost point of dc source 1 to "-" utmost point of dc source 1, rising is connected to two voltage grading resistor R of rising usefulness with the grid V1 of FET 6
17 and voltage grading resistor R
2Node G1 between 8, the B point that drain D 1 and the source S 1 with FET 6 of rising is connected respectively to self-resetting switch 4 and "-" utmost point of dc source 1, first damper diode 9 is connected across and rises with between the drain D 1 and source S 1 of FET 6, promptly the negative pole of first damper diode 9 and anodal being connected respectively to are risen with on the drain D 1 and source S 1 of FET 6, and drain D 1 is connected with the B point of self-resetting switch 4; Two voltage grading resistor R of the lower limit SQ2 of depth limitation travel switch 3 and decline usefulness
311, voltage grading resistor R
4Be connected to "-" utmost point of dc source 1 after 12 series connection, form another the outside series circuit from "+" utmost point of dc source 1 to "-" utmost point of dc source 1, decline is connected to two voltage grading resistor R of decline with the grid V2 of FET 10
311 and voltage grading resistor R
4Node G2 between 12, the E point that drain D 2 and the source S 2 with FET 10 of descending is connected respectively to self-resetting switch 4 and "-" utmost point of dc source 1, second damper diode 13 is connected across and descends with between the drain D 2 and source S 2 of FET 10, promptly the negative pole of second damper diode 13 and anodal being connected respectively to descend with on the drain D 2 and source S 2 of FET 10, and drain D 2 is connected with the E point of self-resetting switch 4; Direct current generator 5 winding two ends are connected to the middle-grade C point and the middle-grade D point of self-resetting switch 4.
Among Fig. 1, in this feeding depth control circuit of half-feeding harvester, described four voltage grading resistor R in the lower dotted line frame
1, R
2, R
3And R
47,8,11 and 12, two risings with FET with descend and all to place in the controller box of an epoxy sealing formation controller 14 with FET and first damper diode 9 and second damper diode 13.
As shown in Figure 1, two of rising usefulness voltage grading resistor R among Fig. 1
17 with voltage grading resistor R
28 both resistance values equate, can adopt 1/2 watt, the resistor that rated power is 10 kilo-ohms; Equally, two of decline usefulness voltage grading resistor R among Fig. 1
311 with voltage grading resistor R
412 both resistance values equate, also can adopt 1/2 watt, the resistor that rated power is 10 kilo-ohms.
Among Fig. 1, rise with FET 6 and descend and all adopt FET IRF250 type with FET 10, FET IRF250 is the N-MOSFET power field effect pipe, withstand voltage 200 volts, and 30 amperes of operating currents, 125 watts of power; Two first damper diodes 9 and second damper diode 13 can adopt diode IN5401 type.
Claims (9)
1. feeding depth control circuit of half-feeding harvester, it by dc source (1), fuse (2), depth limitation travel switch (3), self-resetting switch (4), direct current generator (5), rise with the voltage grading resistor R of FET (6), two rising usefulness
1(7), voltage grading resistor R
2(8), the voltage grading resistor R of first damper diode (9), decline FET (10), two decline usefulness
3(11), voltage grading resistor R
4(12) and second damper diode (13) form, after it is characterized in that dc source (1) "+" utmost point and fuse (2) being connected, be connected with the upper limit SQ1 of depth limitation travel switch (3), the lower limit SQ2 of depth limitation travel switch (3), the A point of self-resetting switch (4) respectively; Two voltage grading resistor R of the upper limit SQ1 of depth limitation travel switch (3) and rising usefulness
1(7), voltage grading resistor R
2(8) be connected to "-" utmost point of dc source (1) after being in series, rising is connected to two voltage grading resistor R of rising usefulness with the grid V1 of FET (6)
1(7) and voltage grading resistor R
2(8) the node G1 between, the B point that drain D 1 and the source S 1 with FET (6) of rising is connected respectively to self-resetting switch (4) and "-" utmost point of dc source (1), first damper diode (9) is connected across between the drain D 1 and source S 1 that rises with FET (6), and drain D 1 is connected with the B point of self-resetting switch (4); Two voltage grading resistor R of the lower limit SQ2 of depth limitation travel switch (3) and decline usefulness
3(11), voltage grading resistor R
4(12) be connected to "-" utmost point of dc source (1) after the series connection, descending is connected to two voltage grading resistor R of decline usefulness with the grid V2 of FET (10)
3(11) and voltage grading resistor R
4(12) the node G2 between, the E point that drain D 2 and the source S 2 with FET (10) of descending is connected respectively to self-resetting switch (4) and "-" utmost point of dc source (1), second damper diode (13) is connected across between the drain D 2 and source S 2 that descends with FET (10), and drain D 2 is connected with the E point of self-resetting switch (4); Direct current generator (5) winding two ends are connected to the middle-grade C point and the middle-grade D point of self-resetting switch (4).
2. a kind of feeding depth control circuit of half-feeding harvester according to claim 1 is characterized in that the upper limit SQ1 of depth limitation travel switch (3) and lower limit SQ2 all are in normal open state.
3. a kind of feeding depth control circuit of half-feeding harvester according to claim 1 is characterized in that dc source (1) is an accumulator, and the DC voltage scope is 18 volts to 28 volts.
4. a kind of feeding depth control circuit of half-feeding harvester according to claim 1, it is characterized in that self-resetting switch (4) is for there being the linked switch of 4 winding points, four windings point is respectively AC contact, BC contact, AD contact and DE contact, and C point and E point are in middle-grade.
5. a kind of feeding depth control circuit of half-feeding harvester according to claim 1, the rated power that it is characterized in that direct current generator (5) is 70 watts, voltage is 24 volts.
6. a kind of feeding depth control circuit of half-feeding harvester according to claim 1 is characterized in that voltage grading resistor R
1(7) and voltage grading resistor R
2(8) both resistance values equate, voltage grading resistor R
3(11) and voltage grading resistor R
4(12) both resistance values equate, described each voltage grading resistor rated power is 1/2 watt, and resistance value is 10 kilo-ohms.
7. a kind of feeding depth control circuit of half-feeding harvester according to claim 1 is characterized in that rising with FET (6) and descends and all adopts FET IRF250 type with FET (10).
8. a kind of feeding depth control circuit of half-feeding harvester according to claim 1 is characterized in that the negative pole of first damper diode (9) and positive pole are connected respectively on the drain D 1 and source S 1 that rises with FET (6); The negative pole of second damper diode (13) and positive pole are connected respectively on the drain D 2 and source S 2 that descends with FET (10).
9. a kind of feeding depth control circuit of half-feeding harvester according to claim 1 is characterized in that in feeding depth control circuit of half-feeding harvester, described four voltage grading resistor R
1(7), R
2(8), R
3(9), R
4(10), two risings are with FETs (6) and descend with FETs (10), and two first damper diodes (9) and second damper diode (13) all place in the controller box of an epoxy sealing, constitute controller (14).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100290465A CN101779543B (en) | 2009-01-16 | 2009-01-16 | Feeding depth control circuit of half-feeding harvester |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100290465A CN101779543B (en) | 2009-01-16 | 2009-01-16 | Feeding depth control circuit of half-feeding harvester |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101779543A CN101779543A (en) | 2010-07-21 |
| CN101779543B true CN101779543B (en) | 2011-08-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009100290465A Expired - Fee Related CN101779543B (en) | 2009-01-16 | 2009-01-16 | Feeding depth control circuit of half-feeding harvester |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101779543B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106523764B (en) * | 2016-12-20 | 2019-06-21 | 中国科学院光电研究院 | A control device for an exhaust valve |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3886718A (en) * | 1974-05-17 | 1975-06-03 | John M Talbot | Automatic header height control system for combines and the like |
| US4136508A (en) * | 1977-01-07 | 1979-01-30 | Allis-Chalmers Corporation | Closed-loop combine header height control |
| US4332126A (en) * | 1980-09-11 | 1982-06-01 | Deere & Company | Automatic height control for a harvester header |
| CN2083839U (en) * | 1990-12-29 | 1991-09-04 | 毛卫民 | Auto-profiling electric controller for flexible header |
| CN201349411Y (en) * | 2009-01-16 | 2009-11-25 | 朱怀东 | Feeding depth control circuit of semi-feeding harvester |
-
2009
- 2009-01-16 CN CN2009100290465A patent/CN101779543B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3886718A (en) * | 1974-05-17 | 1975-06-03 | John M Talbot | Automatic header height control system for combines and the like |
| US4136508A (en) * | 1977-01-07 | 1979-01-30 | Allis-Chalmers Corporation | Closed-loop combine header height control |
| US4332126A (en) * | 1980-09-11 | 1982-06-01 | Deere & Company | Automatic height control for a harvester header |
| CN2083839U (en) * | 1990-12-29 | 1991-09-04 | 毛卫民 | Auto-profiling electric controller for flexible header |
| CN201349411Y (en) * | 2009-01-16 | 2009-11-25 | 朱怀东 | Feeding depth control circuit of semi-feeding harvester |
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| Publication number | Publication date |
|---|---|
| CN101779543A (en) | 2010-07-21 |
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