CN101773814B - Multistable micro-fluidic device - Google Patents
Multistable micro-fluidic device Download PDFInfo
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- CN101773814B CN101773814B CN2010100182745A CN201010018274A CN101773814B CN 101773814 B CN101773814 B CN 101773814B CN 2010100182745 A CN2010100182745 A CN 2010100182745A CN 201010018274 A CN201010018274 A CN 201010018274A CN 101773814 B CN101773814 B CN 101773814B
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Abstract
The invention relates to a multistable micro-fluidic device which comprises at least one first substrate (1). The device is characterized in that a first electrode (2) is arranged on the first substrate (1); a ferroelectric film (7) is arranged on the first electrode (2), and is provided with a third electrode (8); the third electrode (8) is provided with a droplet (4), and the droplet (4) is provided with a second electrode (6). The voltage loaded to the first electrode (2) and the third electrode (3) enables the ferroelectric film (7) to be polarized, the droplet in the micro-fluidic device maintains a contact angle state for a long term by the polarized field strength of the ferroelectric film (7), and the additional energy is not consumed. The invention has simple structure, and can realize the flexible structure.
Description
Technical field
The present invention relates to a kind of micro-fluidic device, especially a kind of micro-fluidic device, i.e. multistable micro-fluidic device with multistable characteristic.
Background technology
Electrowetting technology increases voltage and changes drop and be in contact with it the wetting of surfaces characteristic through being in contact with it at drop between the surface; On macroscopic view, show as the change that drop is in contact with it the face contact angle; On microcosmic, show as Maxwell's stress tensor and cause liquid surface generation deformation, in micro-fluidic device, then show as the change that acts on capillary force on the drop.At present through electric wetting power even can to make drop be ultra hydrophily from super-hydrophobic state-transition.Thisly change the drop surface wetting characteristic through voltage and applied to many fields, for example: Electronic Paper Display Technique (list of references 1,2), biochip technology (list of references 3,4), liquid lens technology (list of references 5,6) etc.
Current electrowetting technology has all adopted a kind of three-decker, and is promptly a kind of based on electric wetting (the electrowetting on dielectric) structure (list of references 7) on the dielectric surface.Shown in Figure of description 1, normally be coated with a layer insulating 3 on first electrode, 2, the first electrodes 2 on first substrate 1; Drop 4 is positioned on the insulating barrier 3; Second electrode 6 and drop 4 direct conductings, when on power supply 5, loading interchange or DC voltage, the wetting characteristics between drop 4 and the insulating barrier 3 will change; Promptly show as along with increasing voltage, the contact angle between drop 4 and the insulating barrier 3 diminishes gradually.In structure shown in Figure 1, insulating barrier 3 has prevented that drop 4 from electrochemical reaction taking place when on-load voltage, thereby makes drop 4 have dynamic contact angle in a big way.In Electronic Paper; Biochip, fields such as liquid lens, first electrode 2 can be designed to the deformation of different shape with accurate control drop 4; Second electrode 6 can be plate electrode or different shape; On insulating barrier 3, can also increase one deck hydrophobic layer to improve contact angle dynamic change scope, drop 4 can be in the air, also can be to be among other a kind of liquid.The general character that is had in all electric wetting structures at present, the core that also is said structure is an electric insulation layer 3, current all Electrowetting devices have all adopted the multilayer sandwich structure of above-mentioned " electrode-drop-insulating barrier-electrode ".
The another one characteristics of said structure are, the contact angle of drop 4 is relevant with the voltage of loading, and when applied voltage was zero, the contact angle of drop 4 returned to reset condition (promptly not electriferous state).Show for Electronic Paper, biochip, application such as liquid lens, when needs keep drop 4 at less contact angle, the maintenance applied voltage that must continue.If applied voltage is an alternating current, suitable energy consumption will be arranged in charging and discharging process, if direct current, the similar electric capacity of above-mentioned " electrode-drop-insulating barrier-electrode " structure also can produce leakage current, thereby cause the consumption of energy.
Electronic Paper shows that biochip, liquid lens all can be operated in some states usually in a long time.Existingly be: need keep applied voltage when keeping drop to be in certain stable state, thereby cause the consumption of energy based on the dielectric surface problem that wetting structure exists that powers on.For reducing the energy consumption of above-mentioned device, the present invention provides a kind of electric wetting structure with multistable characteristic, and it can make drop remain on a kind of state for a long time, and need not to consume any energy when not load applied voltage.
List of references:
1?R.A.Hayes?and?B.J.Feenstra，“Video-speed?electronic?paper?based?on?electrowettingg，”Nature，vol.425，no.25，pp.383-385，Sept.2003.
2?J.Heikenfeld，K.Zhou，E.Kreit，B.Raj，S.Yang，B.Sun，A.Milarcik，L.Clapp?and?R.Schwartz，“Electrofluidic?displays?using?Young-Laplace?transposition?of?brilliant?pigment?dispersions，”NaturePhoton.，vol.3，pp.292-296，May，2009.
3?J.Zeng?and?T.Korsmeyer，“Principles?of?droplet?electrohydrodynamics?for?lab-on-a-chip，”Lab?Chip，vol.4，pp.265-277，2004.
4?J.Atencia?and?D.J.Beebe，“Controlled?microfluidic?interfaces，”Nature，vol.437，no.29，pp.648-655，Sept.2005.
5?B.Bergea?and?J.Peseux，“Variable?focallens?controlled?by?an?external?voltage：an?application?ofelectrowetting，”Eur.Phys.J.E，vol?3，pp.159-163，2000.
6?B.H.W.Hendriks，S.Kuiper，M.A.J.van?AS，C.A.Renders?and?T.W.Tukker，“Electrowetting-basedvariable-focus?lens?for?miniature?systems，”Opt.Rev.，vol.12，no.3，pp.255-259，2005.
7?C.Quilliet?and?B.Bergeb，“Electrowetting：a?recent?outbreak，”Curr.Opin.Colloid?ln.，vol.6，pp.34-39，2001.
Summary of the invention
Technical problem: in order to overcome existing micro-fluidic device in the long-term energy consumption that exists when keeping a kind of contact angle state; The present invention provides a kind of micro-fluidic device with the wetting structure of multistable characteristic electricity; Under this structure; Drop in micro-fluidic can keep a kind of contact angle state for a long time, need not applied voltage, thereby reduces energy consumption.
Technical scheme:
A kind of multistable micro-fluidic device comprises at least one first substrate, is being provided with first electrode more than on first substrate; First electrode is provided with ferroelectric thin film; Ferroelectric thin film is provided with an above third electrode, and drop is arranged on the third electrode, and drop is provided with second electrode; Perhaps first substrate is provided with a plurality of first electrodes, and first electrode is provided with ferroelectric thin film, and ferroelectric thin film is provided with drop, and drop is provided with second electrode; Perhaps first substrate is provided with ferroelectric thin film, and ferroelectric thin film is provided with a plurality of third electrodes, has drop, drop to be provided with second electrode on the third electrode.
Multistable micro-fluidic device of the present invention, third electrode is provided with hydrophobic layer.
Multistable micro-fluidic device of the present invention is used for Electronic Paper and shows on first substrate and/or the ferroelectric thin film partition is arranged, and cuts off to be partitioned into independently pixel cell, independently comprises at least one first electrode and/or at least one third electrode in the pixel cell.
First electrode of multistable micro-fluidic device of the present invention and third electrode are accomplished the polarization of each pixel cell ferroelectric thin film through the mode of ranks addressing; First electrode and third electrode are hexagon, circle, the semicircle or fan-shaped that two-dimensional matrix, circle or article word shape are arranged, fan-shaped preferred quadrant shape.
Multistable micro-fluidic device of the present invention has thin film transistor (TFT) array on first electrode.
Multistable micro-fluidic device of the present invention is used to comprise the Electronic Paper demonstration of aqua storage tank, adopts " electrode-ferroelectric thin film-electrode-drop-electrode " structure with multistable characteristic to substitute the control electrode of each pixel cell.
Multistable micro-fluidic device of the present invention is used for liquid lens, comprises that also sidewall, sidewall are arranged between first substrate and first electrode or sidewall is arranged between first substrate and the ferroelectric thin film.
Multistable micro-fluidic device of the present invention, sidewall are cylindrical, the hexagon of symmetry, hemispherical or bowl-type.
Multistable micro-fluidic device of the present invention is used for liquid lens array, and sidewall is the reticulated cell structure, and the hole of reticulated cell is arranged or article word shape is arranged.
Multistable micro-fluidic device of the present invention is used for biochip, also comprises second substrate, and second electrode is arranged on second substrate, or identical with first board structure.
Beneficial effect: the present invention provides a kind of wetting structure of multistable electricity that has; Thereby make when drop in the micro-fluidic device is long-term to keep a kind of contact angle state, need not to consume extra energy, this structure is through being provided with the voltage between first electrode and the third electrode; Can make ferroelectric thin film produce polarization charge with memory effect; Or adopt a plurality of first electrodes, or a plurality of third electrode, zones of different realizes different polarization charges on the ferroelectric thin film surface; This is simple in structure, and can realize flexible structure.
Description of drawings
Shown in Figure 1 is tradition based on the power on sketch map of wetting structure of dielectric surface.
The first preferred sketch map of the wetting structure of multistable electricity that the present invention of being shown in Figure 2 proposes.
The second preferred sketch map of the wetting structure of multistable electricity that the present invention of being shown in Figure 3 proposes.
The first preferred sketch map of the multistable wetting structure of electricity on electric paper display that the present invention of being shown in Figure 4 proposes.
The first electrode matrix sketch map of the multistable wetting structure of electricity on electric paper display that the present invention of being shown in Figure 5 proposes.
The third electrode matrix sketch map of the multistable wetting structure of electricity on electric paper display that the present invention of being shown in Figure 6 proposes.
The second preferred sketch map of the multistable wetting structure of electricity on electric paper display that the present invention of being shown in Figure 7 proposes.
The sketch map of the multistable wetting structure of electricity on liquid lens that the present invention of being shown in Figure 8 proposes.
The sketch map of the multistable wetting structure of electricity on micro-fluidic chip that the present invention of being shown in Figure 9 proposes.
The 3rd preferred sketch map of the wetting structure of multistable electricity that the present invention of being shown in Figure 10 proposes.
The 4th preferred sketch map of the wetting structure of multistable electricity that the present invention of being shown in Figure 11 proposes.
More than have among the figure: 1, first substrate, 2, first electrode, 3, insulating barrier, 4, drop; 5, power supply, 6, second electrode, 7, ferroelectric thin film, 8, third electrode; 9, external power supply, 10, first switch, 11, non-conductive liquid, 12, cut off; 13, second substrate, 14, sidewall, 15, second switch, the 16, the 3rd switch.
The specific embodiment
The first preferred sketch map of the electric wetting structure with multistable characteristic that the present invention of being shown in Figure 2 proposes.First substrate 1 is a two dimensional panel normally, can be materials such as glass, transparent resin, polyimides or PET, is first electrode 2 on first substrate 1; First electrode 2 can be the two dimensional surface electrode, also can be the various two-dimensional patterns that design for control drop 4 shapes, and first electrode 2 can be metal electrodes such as aluminium, copper; Also can be transparency conductive electrodes such as ITO, different with traditional Electrowetting device, be one deck ferroelectric thin film 7 on first electrode 2; Can be the inorganic iron conductive film that material such as barium titanate, lithium titanate or its mixture constitute, also can be organic ferroelectric thin film that polymeric material such as Kynoar or its copolymer constitute, and is third electrode 8 on ferroelectric thin film 7; Third electrode 8 can be metal electrodes such as aluminium, copper; Also can be transparency conductive electrodes such as ITO, drop 4 be positioned on the third electrode 8, and drop 4 can be a deionization; Or conductive brine, for example contain Kcl, Nacl, NaSO
4Deionized water etc., can also be various biological organic solutions, between drop 4 and third electrode 8, can also increase the very thin hydrophobic layer of one deck, for example film such as polytetrafluoroethylene (PTFE) omits the hydrophobic layer that do not draw among the figure, second electrode 6 directly contacts with drop 4.
The operation principle of the wetting structure of multistable shown in Figure 2 electricity is, external power supply 9 at first is carried in voltage between first electrode 2 and the third electrode 8, and first switch 10 between this moment first electrode 2 and second electrode 6 is in off state; External power supply 9 can be the alternating voltage of various waveforms, also can be DC voltage, the preferred DC voltage of the present invention; Added a constant field intensity this moment on ferroelectric thin film, during the powerful then and there coercive field in ferroelectric thin film 7, ferroelectric thin film 7 polarizes; Behind the voltage of removing on the external power supply 9, ferroelectric thin film 7 will keep its polarised direction, thereby produce polarization charge on the two sides of film; Behind voltage on the removal external power supply 9; First electrode 2 and second electrode 6 are connected through switch 10, be downloaded on the drop 4 thereby polarization field on the ferroelectric thin film 7 is forced, drop 4 is under the strong effect of impressed field; Produce electric wetting phenomena; Contact angle between drop 4 and the third electrode 8 changes, and when on third electrode 8, applying one deck hydrophobic layer, can realize the contact angle excursion that drop 4 is bigger.Because the polarization field intensity on the ferroelectric thin film 7 need not keeping of applied voltage, so drop 4 is in a kind of stable state under the effect of polarization field intensity, do not consume any energy this moment.
The electric wetting structure second preferred version sketch map that the present invention of being shown in Figure 3 proposes with multistable characteristic.First electrode 2 among the figure on first substrate 1 has been divided into two zones with third electrode 8 (can also increase hydrophobic layer on the third electrode 8; Omit among the figure and do not draw); When on-load voltage, on two pairs of electrode pairs forming by first electrode 2 and third electrode 8, load opposite voltage respectively, thereby make ferroelectric thin film 7 have opposite polarity polarization zone at the right and left; After removing applied voltage; Opposite polarity polarization zone causes the non-uniform Distribution field intensity at the opposite electric charge of ferroelectric thin film 7 surperficial polarizations, makes that the zone has different wetting characteristics about the ferroelectric thin film surface; Thereby moving of driven droplet, can also come the non-homogeneous field intensity on further control ferroelectric thin film 7 surfaces to distribute by on-load voltage on second electrode 6 this moment.Other a kind of voltage load mode of this structure is, on-load voltage between two third electrodes 8 on ferroelectric thin film 7 surfaces only, and first electrode 2 can be a suspended state; Or save first electrode 2; Or opposite only on-load voltage between two first electrodes 2, third electrode 8 is in suspended state or is omitted, after removing applied voltage; Ferroelectric thin film 7 is at two electrode position polarization antipole electric charges, thereby produces different wetting characteristics at the right and left.Said structure only drawn two first electrodes 2 and third electrode 8, the researcher of this area can increase more first electrode 2 and third electrode 8 as required, and first electrode 2 is designed to various patterns with third electrode 8.
First preferred embodiment of the multistable wetting structure of electricity on electronic paper display device that the present invention of being shown in Figure 4 proposes is sectional schematic diagram shown in the figure.Be first electrode 2 on first substrate 1 among the figure, because each pixel needs independent addressing, first electrode 2 is cut off 12 and is divided into independently pixel cell; Cutting off 12 can be hydrophilic material, SU-8 for example, first electrode, the 2 not conductings mutually in each pixel cell; First electrode 2 can be a two-dimensional matrix pattern, and the researcher of this area can also be designed to other various patterns with it, thereby controls the shape of non-conductive liquid 11; Quadrant shape for example, non-conductive liquid 11 can be mineral oil, for example silicone oil etc.; For realizing colored the demonstration, can increase the dyestuff that is soluble in oil, for example tonyred; Sudan black etc., ferroelectric thin film 7 is similar with the third electrode 8 and first electrode 2, is cut off 12 and is divided into independently pixel cell; On third electrode 8, can also apply one deck hydrophobic layer, polytetrafluoroethylene (PTFE) (among the figure omit do not draw) for example is through controlling the voltage between first electrode 2 and third electrode 8 in each pixel cell respectively; Can realize the polarization intensity of ferroelectric thin film 7 in independent each pixel cell of adjustment; After removal was carried in the voltage between first electrode 2 and the third electrode 8, ferroelectric thin film 7 still kept its polarization, and this moment is with first electrode 2 and 6 conductings of second electrode; Then polarization field is forced between the third electrode 8 that has been downloaded to each pixel cell and public second electrode 6, thereby controls the contact surface shape of drop 4 and non-conductive liquid 11 in each pixel cell respectively.Compare with the wetting demonstration of traditional electrical,, need not the voltage that thin film transistor (TFT) array is kept each pixel cell among Fig. 4 because ferroelectric thin film 7 has memory characteristic.
The polarization that first electrode 2 of each pixel cell and third electrode 8 can be accomplished each pixel cell ferroelectric thin film 7 through the mode of ranks addressing among Fig. 4.Fig. 5 and shown in Figure 6 be the preferred sketch map of ranks addressing system, first electrode 2 that is among Fig. 5 with each pixel cell of delegation is connected to the (R among Fig. 5 on the same row address line
n, R
N+1, R
N+2...), the third electrode 8 that is in each pixel cell of same row among Fig. 6 is connected to the (C among Fig. 6 on the same column address conductor
m, C
M+1, C
M+2...).The rank addresses line of the ranks addressing system among Fig. 5 and Fig. 6 is that a kind of matrix form is arranged, and this area researcher can also be designed to crooked curve with the rank addresses line as required, to satisfy the pixel that article word shape is arranged; Or other non-regular pixel, circular pixel for example, corresponding first electrode 2 can be a different shape with third electrode 8; The hexagon arranged of article word shape for example; Or circular, or semicircle, or quadrant shape etc.
Fig. 5 can also have different shapes with first electrode 2 among Fig. 6 with third electrode 8; For example the area of first electrode 2 can further dwindle; Thereby make two or more first electrode, 2 common corresponding third electrodes 8; In a pixel cell, comprise a third electrode 8 and a plurality of first electrodes 2 like this, these a plurality of first electrodes 2 can load different or even reverse voltage successively, with the voltage acting in conjunction on the third electrode 8; On ferroelectric thin film 7, can produce the different or even opposite zone of polarization intensity, thereby the zones of different on ferroelectric thin film 7 surfaces produces different wetting characteristics in a pixel cell.Said structure can also be conversely, and promptly a pixel cell comprises one first electrode 2 and a plurality of third electrodes 8.
Fig. 7 is second preferred embodiment of the multistable wetting structure of electricity on electronic paper display device that the present invention proposes; A pixel cell comprises two first electrodes 2 and two third electrodes 8 among the figure; Can also increase one deck hydrophobic layer (omitting among the figure) on the third electrode 8; For simplifying preparation technology, cut off 12 and be prepared on the ferroelectric thin film 7.A kind of typical working method is, two third electrodes 8 in the same pixel cell load opposite polarity voltage respectively, and two first corresponding electrodes 2 also load opposite polarity voltage; Behind the on-load voltage; The ferroelectric thin film 7 of same pixel cell is divided into two zones, and the polarised direction in these two zones is just in time opposite, thereby causes two interior third electrodes 8 of same pixel cell respectively with opposite electric charge; And further on third electrode 8, produce the non-uniform Distribution field intensity; This moment, second electrode 6 can be a suspended state, or being in a given voltage adjusts the field strength distribution in the pixel cell, or directly omitted second electrode 6.A kind of in addition typical working method is that on-load voltage between two third electrodes 8 in the same pixel cell makes ferroelectric thin film 7 produce polarization; After removing on-load voltage,, produce non-homogeneous field intensity at two third electrodes, the 8 interregional electric charges that have opposed polarity; Under this working method, can save first electrode 2, same; Also can be between two first electrodes 2 on-load voltage, its course of work is similar.The researcher of this area can further adjust electrode shape and the number in the pixel cell as required.
The researcher of this area can also prepare thin film transistor (TFT) array (simply not drawing among the figure) on first electrode 2 in Fig. 4 and Fig. 7; Control and keep the voltage on each pixel cell first electrode 2, this moment, third electrode 8 was in suspended state, and second electrode 6 is a public electrode; Ferroelectric thin film 7 is as traditional thin dielectric film; Under this duty, Fig. 4 is identical with traditional Electronic Paper operation principle with structure among Fig. 7, needs to rely on thin film transistor (TFT) keep voltage.The researcher of this area can also realize a kind of mixed mode of operation; Promptly adopt thin film transistor (TFT) array and ferroelectric thin film 7 simultaneously; The polarization process of ferroelectric thin film 7 is identical with said method; Voltage adds up mutually on this moment thin film transistor (TFT) array and the ferroelectric thin film 7, is carried in jointly on drop 4 and the non-conductive liquid 11.
The researcher of this area can also be with the structure applications among Fig. 2 and Fig. 3 in other similar Electronic Paper display structures; A kind of electronic paper display device that comprises aqua storage tank of for example mentioning in the list of references 2; The control electrode of its each pixel cell, " electrode-ferroelectric thin film-electrode-drop-electrode " structure with multistable characteristic that can adopt the present invention to propose substitutes, thereby is implemented under the condition that need not on-load voltage; Control wetted property, the power consumption of reduction device.
Being the preferred embodiment of the multistable wetting structure of electricity on liquid lens that the present invention proposes shown in Fig. 8, is sectional schematic diagram shown in the figure.Drop 4 contacts with second electrode 6 on second substrate 13, and second substrate 13 is transparency carriers, can be glass; Or material such as resin, second electrode 6 is a transparency electrode, for example the ITO electrode; Drop 4 is positioned on the sidewall 14 of rotational symmetry structure with the interface of non-conductive liquid 11, is " electrode-insulating barrier " structure on the sidewall 14 of traditional liquid lens, and the multistable configuration that the present invention proposes is to prepare first electrode 2 on the sidewall 14 earlier; Prepare ferroelectric thin film 7 above that, preparation third electrode 8 can also prepare one deck hydrophobic layer on third electrode 8 on ferroelectric thin film 7; For example polytetrafluoroethylene film, the for a change wetting characteristics of drop 4, at first on-load voltage between first electrode 2 and third electrode 8; Thereby ferroelectric thin film 7 is polarized; After removal is carried in the voltage between first electrode 2 and the third electrode 8, first electrode 2 and second electrode 6 are carried out short circuit, be loaded on two kinds of mixing materials thereby polarization field is forced.Electrode on the sidewall 14 can also with Fig. 3 in similar, have a plurality of first electrodes 2 and a plurality of third electrodes 8.
It shown in Fig. 8 a kind of liquid lens cellular construction of simplification; The researcher of this area; Can change the shape of liquid lens unit as required; For example cylindrical, the symmetrical hexagon of rotation symmetry, hemispherical, bowl-shape or plane etc. can also increase or reduce the distance between first substrate 1 and second substrate 13, or at the outside of first substrate 1 and second substrate 13 increase other lenses.The researcher of this area can also expand to reticulated cell with 14 structures of the sidewall among Fig. 8 as required; Thereby formation liquid lens array; The arrangement of each liquid lens respective apertures can be that arranged, article word shape are arranged; First electrode 2 of liquid lens array can be interconnected through Fig. 5 and ranks matrix shown in Figure 6 with third electrode 8, also can realize the independent adjustment of each liquid lens unit liquid level through thin film transistor (TFT) array.
Being the preferred embodiment of the multistable wetting structure of electricity on micro-fluidic chip that the present invention proposes shown in Fig. 9, is sectional schematic diagram shown in the figure.On first substrate 1, prepare first electrode 2 successively, ferroelectric thin film 7 and third electrode 8; For moving of driven droplet 4, first electrode 2 is divided into many independently electrodes with third electrode 8, also can only comprise first electrode, 2 arrays; Or third electrode 8 arrays, independently electrode can be through the polarized state of applied voltage control ferroelectric thin film 7 for each, and drop 4 can be various organic or inorganic solution; Shown in figure; When drop 4 covers two during with top electrode, through controlling the polarized state of the corresponding ferroelectric thin film 7 of each first electrode 2 and third electrode 8 respectively, the contact angle of its on the left side electrode can be different with the contact angle of the right electrode; Thereby cause drop 4 unequal in the capillary force of the right and left, drop 4 is moved under the effect of capillary force.The researcher of this area can also be as required with second electrode 6 on second substrate 13 be prepared into first substrate 1 on similar " electrode-ferroelectric thin film-electrode " structure, thereby more effectively control is carried in the capillary force on the drop 4.
It shown in Fig. 9 a kind of microfluidic chip structure sketch map of simplification." electrode-ferroelectric thin film-electrode-drop-electrode " structure that the researcher of this area can adopt the present invention to propose as required is designed to various picture shapes with first substrate 1 and second substrate 13.
The 3rd preferred sketch map of the wetting structure of multistable electricity that the present invention of being shown in Figure 10 proposes.A kind of multistable micro-fluidic device comprises that one first substrate, 1, the first substrate 1 is provided with a plurality of first electrode, 2, the first electrodes 2 and is provided with ferroelectric thin film 7, and ferroelectric thin film 7 is provided with drop 4, and drop 4 is provided with second electrode 6.First substrate 1 is a two dimensional panel normally, can be materials such as glass, transparent resin, polyimides or PET, is a plurality of first electrodes 2 on first substrate 1; First electrode 2 can be the two dimensional surface electrode, also can be the various two-dimensional patterns that design for control drop 4 shapes, and first electrode 2 can be metal electrodes such as aluminium, copper; Also can be transparency conductive electrodes such as ITO, different with traditional Electrowetting device, be one deck ferroelectric thin film 7 on first electrode 2; It can be the inorganic iron conductive film that material such as barium titanate, lithium titanate or its mixture constitute; Also can be organic ferroelectric thin film that polymeric material such as Kynoar or its copolymer constitute, drop 4 be positioned on the ferroelectric thin film 7, and drop 4 can be a deionization; Or conductive brine, for example contain Kcl, Nacl, NaSO
4Deionized water etc., can also be various biological organic solutions, between drop 4 and ferroelectric thin film 7, can also increase the very thin hydrophobic layer of one deck, for example film such as polytetrafluoroethylene (PTFE) omits the hydrophobic layer that do not draw among the figure, second electrode 6 directly contacts with drop 4.Be connected with power supply between two first electrodes 2, second electrode 6 is connected with second switch 15 through first switch 10 respectively with two first electrodes 2.The principle of the wetting structure of this multistable electricity is: on-load voltage between two first electrodes 2 at first; After removal is carried in the voltage on first electrode 2; Ferroelectric thin film 7 is at two electrode position polarization antipole electric charges, thereby produces different wetting characteristics at the right and left.Can also be behind the voltage of removing on first electrode 2, drop 4 is connected first switch 10, or second switch 15, thus drop 4 and ferroelectric thin film 7 surfaces have the electric charge of opposed polarity, further strengthen drop 4 and ferroelectric thin film 7 wetting of surfaces power.Said structure two first electrodes 2 that only drawn, the researcher of this area can increase more first electrode 2 as required, and first electrode 2 is designed to various patterns.
The 4th preferred sketch map of the wetting structure of multistable electricity that the present invention of being shown in Figure 11 proposes.A kind of multistable micro-fluidic device comprises that one first substrate, 1, the first substrate 1 is provided with ferroelectric thin film 7, and ferroelectric thin film 7 is provided with a plurality of third electrodes 8, and drop 4 is arranged on the third electrode 8, and drop 4 is provided with second electrode 6.First substrate 1 is a two dimensional panel normally, can be materials such as glass, transparent resin, polyimides or PET, is one deck ferroelectric thin film 7 on first substrate 1; Can be the inorganic iron conductive film that material such as barium titanate, lithium titanate or its mixture constitute, also can be organic ferroelectric thin film that polymeric material such as Kynoar or its copolymer constitute, and is a plurality of third electrodes 8 on ferroelectric thin film 7; Third electrode 8 can be metal electrodes such as aluminium, copper; Also can be transparency conductive electrodes such as ITO, drop 4 be positioned on the third electrode 8, and drop 4 can be a deionization; Or conductive brine, for example contain Kcl, Nacl, NaSO
4Deionized water etc., can also be various biological organic solutions, between drop 4 and third electrode 8, can also increase the very thin hydrophobic layer of one deck, for example film such as polytetrafluoroethylene (PTFE) omits the hydrophobic layer that do not draw among the figure, second electrode 6 directly contacts with drop 4.Be connected with power supply between two third electrodes 8, second electrode 6 is connected with the 3rd switch 16 through first switch 10 respectively with two third electrodes 8.Principle and Figure 10 of the wetting structure of this multistable electricity are similar; The voltage that is carried on the third electrode 8 makes ferroelectric thin film 7 surfaces produce polarization charge; Thereby change ferroelectric thin film 7 wetting of surfaces characteristics; First switch 10 and the 3rd switch 16 respectively with third electrode 8 conductings, further strengthen electric wetting power.Said structure two third electrodes 8 that only drawn, the researcher of this area can increase more third electrode 8 as required, and third electrode 8 is designed to various patterns.
Embodiment recited above describes preferred implementation of the present invention; Be not that design of the present invention and scope are limited; Do not breaking away under the design concept prerequisite of the present invention; Common engineers and technicians make technical scheme of the present invention in this area various modification and improvement all should fall into protection scope of the present invention, and the technology contents that the present invention asks for protection all is documented in claims.
Claims (10)
1. multistable micro-fluidic device; Comprise at least one first substrate (1); It is characterized in that: on first substrate (1), be provided with first electrode (2) more than, first electrode (2) is provided with ferroelectric thin film (7), and ferroelectric thin film (7) is provided with an above third electrode (8); Drop (4) is arranged on the third electrode (8), and drop (4) is provided with second electrode (6); Perhaps first substrate (1) is provided with a plurality of first electrodes (2), and first electrode (2) is provided with ferroelectric thin film (7), and ferroelectric thin film (7) is provided with drop (4), and drop (4) is provided with second electrode (6); Perhaps first substrate (1) is provided with ferroelectric thin film (7), and ferroelectric thin film (7) is provided with a plurality of third electrodes (8), and drop (4) is arranged on the third electrode (8), and drop (4) is provided with second electrode (6).
2. multistable micro-fluidic device according to claim 1 is characterized in that: third electrode (8) is provided with hydrophobic layer.
3. multistable micro-fluidic device according to claim 1; It is characterized in that: on first substrate (1) and/or the ferroelectric thin film (7) partition (12) is arranged; Cut off (12) and be partitioned into independently pixel cell, independently comprise at least one first electrode (2) and/or at least one third electrode (8) in the pixel cell.
4. multistable micro-fluidic device according to claim 1 is characterized in that: first electrode (2) and third electrode (8) are hexagon, circle, the semicircle or fan-shaped that two-dimensional matrix, circle or article word shape are arranged.
5. multistable micro-fluidic device according to claim 1 is characterized in that: on first electrode (2), thin film transistor (TFT) array is arranged.
6. multistable micro-fluidic device according to claim 1 is characterized in that: also comprise sidewall (14), sidewall (14) is arranged between first substrate (1) and first electrode (2) or sidewall (14) is arranged between first substrate (1) and the ferroelectric thin film (7).
7. multistable micro-fluidic device according to claim 6 is characterized in that: sidewall (14) is cylindrical, the hexagon of symmetry, hemispherical or bowl-type.
8. multistable micro-fluidic device according to claim 6 is characterized in that: sidewall (14) is the reticulated cell structure, and the hole of reticulated cell is arranged or article word shape is arranged.
9. multistable micro-fluidic device according to claim 1 is characterized in that: also comprise second substrate (13), second electrode (6) is arranged on second substrate (13).
10. multistable micro-fluidic device according to claim 1 is characterized in that: also comprise second substrate (13), second substrate (13) is identical with first substrate (1) structure.
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| CN105067835B (en) * | 2015-07-16 | 2017-11-28 | 武汉大学 | Fluid drive-type piezoelectric transducer based on flexible ferroelectric thin film and preparation method thereof |
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| CN108970657B (en) * | 2018-07-24 | 2021-04-13 | 北京机械设备研究所 | Preparation method of microfluid array controller |
| CN109046483B (en) * | 2018-08-28 | 2022-04-15 | 京东方科技集团股份有限公司 | Fluid particle and preparation method thereof, micro-fluid system and preparation method thereof, and control method thereof |
| CN109613694B (en) * | 2019-01-28 | 2024-10-18 | 长治医学院 | Optometry method for varifocal liquid lens optometry device |
| CN109908987B (en) * | 2019-03-20 | 2021-01-29 | 山东大学 | Preparation method of a pipette for transferring micro droplets without loss based on pyroelectric effect |
| CN110420673B (en) * | 2019-08-14 | 2022-06-03 | 京东方科技集团股份有限公司 | Microfluidic device, driving method thereof and microfluidic system |
| CN111589477B (en) * | 2020-05-28 | 2022-04-15 | 韶关学院 | A microchannel device processing technology |
| CN112718028B (en) * | 2020-12-24 | 2022-11-01 | 深圳先进技术研究院 | A kind of optically manipulated droplet motion material, preparation method and application thereof |
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