CN101764193A - High-heat conductivity and large-power LED lead frame and manufacture method thereof - Google Patents
High-heat conductivity and large-power LED lead frame and manufacture method thereof Download PDFInfo
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- CN101764193A CN101764193A CN200910238895A CN200910238895A CN101764193A CN 101764193 A CN101764193 A CN 101764193A CN 200910238895 A CN200910238895 A CN 200910238895A CN 200910238895 A CN200910238895 A CN 200910238895A CN 101764193 A CN101764193 A CN 101764193A
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Abstract
The invention provides a high-heat conductivity and large-power LED lead frame and a manufacture method thereof, which relate to a semiconductor light emitting diode product and a production process, in particular to a high-heat conductivity and large-power semiconductor light emitting diode product and a production process. The high-heat conductivity and large-power LED lead frame comprises a bottom layer, a metal protective layer, an oxidizing insulation layer and a metal conductive layer from bottom to top, wherein the bottom layer is a graphite layer using high-heat conductivity materials of graphite for manufacturing a base plate, the metal protective layer is a vapor deposition metal layer made of high-heat conductivity ceramic materials, the oxidizing insulation layer is a metal oxidizing insulation layer, the upper layer is the metal conductive layer, and a conductive circuit is distributed on the conductive layer. The base plate of the invention has good heat conductivity, electric insulation performance and the like, is applicable to base plates of large-power LED light emitting diode devices, LED light source devices with high heat conduction and heat radiation requirements and the like.
Description
Technical field:
The present invention relates to semiconductor light-emitting-diode product and production technology, especially high-heat conductivity and large-power semiconductor light-emitting-diode product and production technology.
Background technology:
In the process of the continuous development of LED encapsulation technology, along with the brightness degree of led chip is more and more higher, great power LED replaces traditional lighting has become trend of the times.And the improvement of encapsulation technology the and more and more requirement of requirement, the luminous efficiency of small size is more and more high, traditional process modification can not satisfy more and more higher requirement.So just must get on to solve the heat dissipation problem of the chip of LED at all,, promote luminous flux, life-saving etc. to reduce junction temperature by material.At present, the material of the lead frame of great power LED is mainly based on copper, aluminium, cover insulating barrier with bonding mode again in these metal surfaces then, on insulating barrier, lay circuit at last, and the insulating barrier of the heat conduction of bonding usefulness, the capacity of heat transmission of at present best import heat-conducting glue also has only 20W/mK, generally all has only 5W/mK.Therefore, though the conductive coefficient of copper, aluminium is all more than 250W/mK, and after having passed through the thermal resistance of insulating barrier, its capacity of heat transmission is had a greatly reduced quality.Make the junction temperature of chip of great power LED can not well be transmitted to the outside, thereby the luminous flux that has limited great power LED promote, and makes great power LED can not well bring into play its advantage.
Along with the continuous development of science and technology, the chip technology of power-type LED constantly develops, and the chip brightness grade constantly promotes, but chip can produce heat because of resistance or photoresistance etc. in luminescence process, and this heat is exactly the junction temperature that industry is said, symbol Tj.If this junction temperature can be controlled at below 85 ℃, then LED can keep high amount of light, but along with the rising of junction temperature, the amount of light of LED will descend, and the possibility that LED lost efficacy will increase.As long as that junction temperature can be controlled is low more, the life-span of LED is just long more, even can be lifted out light quantity.Therefore, the heat that is produced during how with chip light emitting is derived, and will be crucial.
Summary of the invention:
The objective of the invention is to: overcome the deficiency on the prior art, start with, adopt graphite to make lead frame, be intended to effectively solve the chip cooling problem, improve heat conductivility, prolong the LED life-span, improve reliability from the basis.A kind of high-heat conductivity and large-power LED lead frame and preparation method are provided.
It comprises bottom from bottom to top, coat of metal, oxidation insulating layer and metal conducting layer; Bottom is to adopt high thermal conductivity material graphite to make the graphite linings of substrate, and coat of metal is the evaporated metal layer that adopts the high heat-conducting ceramic material, and oxidation insulating layer is the burning insulating barrier, and the upper strata is a metal conducting layer; Be distributed with the conducting wire on the conductive layer.
A, graphite material are selected: choose phosphorus content at the graphite material more than 98%, and conductive coefficient is at the graphite raw material of 150W/m.K;
B, graphite material processing: the graphite substrate of choosing is carried out 2000 ℃ of vacuum calcinings of high temperature, carry out 8-10T compression molding axially again;
C, graphite material surface treatment: the surface flattened handle to≤10^-3mm;
D, at after treatment the ceramic coated insulating barrier of graphite material surface heat, the about 0.1-0.5mm of thickness;
E, lay metal conducting layer at the ceramic insulation laminar surface;
F, etched circuit;
G, finish finished product.
The bottom graphite linings selects for use conductive coefficient greater than the graphite material more than 400 its surface to be handled, and makes it to reach high-flatness.
Coat of metal adopts vapour deposition method to make evaporated metal layer, its thickness between 10-1500um, conductive coefficient＞300W/mK.
Oxidation insulating layer is the burning insulating barrier, and its thickness is at 5-1000um, and insulation resistance is greater than 100M Ω.
Outside oxidation insulating layer, cover metal conducting layer; Pass through the required circuit of chemical method etching at the metallic conduction laminar surface.
Characteristics of the present invention mainly are with progressive:
1, adopt graphite as main material, utilize the high thermal conductivity of graphite and thermal coefficient of expansion the end of than, adopt technology such as metal evaporation with high heat conductive metal attached to graphite surface, shield.
2, the oxidation insulating layer of high heat conduction also possesses lower thermal coefficient of expansion, is unlikely to produce deformation under the situation that chip is heated, and produces the slit with graphite or top layer circuit, reduces the capacity of heat transmission of whole lead frame.And high heat conduction oxidation insulating layer possesses bigger resistance, when oxide isolated layer thickness 100um is above, and its resistance＞100M Ω.
3, graphite possesses certain conductive capability, but poorer slightly than metal, is equivalent to a resistance, is static dissipative material, and static that can sorbent surface promotes the antistatic effect of LED.
4, high-thermal conductive metal protective layer and oxidation insulating layer possess higher mechanical strength and toughness, can avoid when process procedures such as cutting, processing, produce the crack with the both sides binder course, improve reliability.
5, the lead frame that the present invention produced can be used in high reliability on a large scale, on the device that high heat radiation requires, as great power LED or other devices.
Description of drawings:
Accompanying drawing 1 is main TV structure figure of the present invention;
Accompanying drawing 2 is process charts of the present invention.
Embodiment:
Bottom (1) is set, coat of metal (2), oxidation insulating layer (3) and metal conducting layer (4) from bottom to top; Bottom (1) is to adopt high thermal conductivity material graphite to make the graphite linings of substrate, and coat of metal (2) is the evaporated metal layer that adopts the high heat-conducting ceramic material, and oxidation insulating layer (3) is the burning insulating barrier, and the upper strata is metal conducting layer (4); Be distributed with the conducting wire on the conductive layer.
Adopt following processing step to finish:
A, graphite material are selected;
The selection of graphite: choose phosphorus content at the graphite material more than 98%, and conductive coefficient is at the graphite raw material of 150W/m.K.The common graphite conductive coefficient is about 100W/m.K, and the theoretical conductive coefficient of single crystal graphite is at 2100W/m.K, so the room for promotion of the capacity of heat transmission of graphite is bigger;
B, graphite material processing: the graphite substrate of choosing is carried out 2000 ℃ of vacuum calcinings of high temperature, carry out 8-10T compression molding axially again, weigh and the inner monocrystalline compact texture of lifting graphite, reduce the space, increase the capacity of heat transmission 50%, arrive 300W/m.K;
C, graphite material surface treatment: the surface flattened handle to≤10^-3mm;
D, at after treatment the ceramic coated insulating barrier of graphite material surface heat, the about 0.1-0.5mm of thickness;
E, lay metal conducting layer at the ceramic insulation laminar surface;
F, etched circuit;
G, finish finished product.
The bottom graphite linings selects for use conductive coefficient greater than the graphite material more than 400 its surface to be handled, and makes it to reach high-flatness.Coat of metal adopts vapour deposition method to make evaporated metal layer, its thickness between 10-1500um, conductive coefficient＞300W/mK.Oxidation insulating layer is the burning insulating barrier, and its thickness is at 5-1000um, and insulation resistance is greater than 100M Ω.Outside oxidation insulating layer, cover metal conducting layer; Pass through the required circuit of chemical method etching at the metallic conduction laminar surface.
Graphite, as a kind of carbon-based material, graphite is the multilayer build-up crystal that is the hexagonal annular plane grid between a kind of carbon atom.Though graphite belongs to Inorganic Non-metallic Materials, because of it has good heat, electrical conductivity is called as semimetal.Graphite has the heat more taller than some metal, electrical conductivity, and having more than metal simultaneously is low thermal coefficient of expansion, very high fusing point and chemical stability.Utilize it to be easy to processing, characteristics such as cost low (1/3 price of about copper), thermal conductivity height (reach approximately copper 1.2 times) are to reduce thermal resistance, life-saving, increase power.Graphite is chemically inert in non-oxidative medium, has good corrosion resistance, and except that strong acid and strong oxidizing property medium, graphite is not subjected to the corrosion of other acid, alkali, salt, does not react with any organic compound.
The present invention adopts the graphite of high heat conduction as framework master material, utilizes its high conductive coefficient, and the thermal coefficient of expansion at the end is made the lead frame of high reliability.Fundamentally solve the heat dissipation problem of great power LED.
Claims (6)
1. high-heat conductivity and large-power LED lead frame, it is characterized in that: it comprises bottom from bottom to top, coat of metal, oxidation insulating layer and metal conducting layer; Bottom is to adopt high thermal conductivity material graphite to make the graphite linings of substrate, and coat of metal is the evaporated metal layer that adopts the high heat-conducting ceramic material, and oxidation insulating layer is the burning insulating barrier, and the upper strata is a metal conducting layer; Be distributed with the conducting wire on the conductive layer.
2. high-heat conductivity and large-power LED lead frame preparation method is characterized in that: adopt following steps to finish:
A, graphite material are selected: choose phosphorus content at the graphite material more than 98%, and conductive coefficient is at the graphite raw material of 150W/m.K;
B, graphite material processing: the graphite substrate of choosing is carried out 2000 ℃ of vacuum calcinings of high temperature, carry out 8-10T compression molding axially again;
C, graphite material surface treatment: the surface flattened handle to≤10^-3mm;
D, at after treatment the ceramic coated insulating barrier of graphite material surface heat, the about 0.1-0.5mm of thickness;
E, lay metal conducting layer at the ceramic insulation laminar surface;
F, etched circuit;
G, finish finished product.
3. a kind of high-heat conductivity and large-power LED lead frame as claimed in claim 1 is characterized in that: the bottom graphite linings selects for use conductive coefficient greater than the graphite material more than 400 its surface to be handled, and makes it to reach high-flatness.
4. a kind of high-heat conductivity and large-power LED lead frame as claimed in claim 1 is characterized in that: coat of metal adopts vapour deposition method to make evaporated metal layer, its thickness between 10-1500um, conductive coefficient＞300W/m K.
5. a kind of high-heat conductivity and large-power LED lead frame as claimed in claim 1 is characterized in that: oxidation insulating layer is the burning insulating barrier, and its thickness is at 5-1000um, and insulation resistance is greater than 100M Ω.
6. a kind of high-heat conductivity and large-power LED lead frame as claimed in claim 1 is characterized in that: cover metal conducting layer outside oxidation insulating layer; Pass through the required circuit of chemical method etching at the metallic conduction laminar surface.
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| CN200910238895A CN101764193A (en) | 2009-12-31 | 2009-12-31 | High-heat conductivity and large-power LED lead frame and manufacture method thereof |
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| CN200910238895A CN101764193A (en) | 2009-12-31 | 2009-12-31 | High-heat conductivity and large-power LED lead frame and manufacture method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102427108A (en) * | 2011-11-15 | 2012-04-25 | 中国科学院半导体研究所 | Flip-chip bonding structure for multi-current injection region device and manufacturing method thereof |
| CN103118492A (en) * | 2013-01-31 | 2013-05-22 | 蚌埠德豪光电科技有限公司 | Aluminum substrate, method for manufacturing same and LED light source with aluminum substrate |
| CN104460903A (en) * | 2014-12-03 | 2015-03-25 | 吉首大学 | Radiator for notebook computer |
| CN111195802A (en) * | 2018-11-16 | 2020-05-26 | 泰州友润电子科技股份有限公司 | Production process of lead frame with positioning function |
| CN111443109A (en) * | 2019-01-16 | 2020-07-24 | 国网宁夏电力有限公司 | Condensation alarm induction plate for mechanism box of transformer substation |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007214471A (en) * | 2006-02-13 | 2007-08-23 | Matsushita Electric Ind Co Ltd | Light-emitting module and method of manufacturing same |
| CN101415295A (en) * | 2007-10-19 | 2009-04-22 | 晟茂（青岛）先进材料有限公司 | Graphite-based novel electronic circuit board and preparation technique thereof |
| CN101509650A (en) * | 2009-03-13 | 2009-08-19 | 东莞市翔龙能源科技有限公司 | Heat conduction and dissipation device and heat conduction base of high-power LED lamp and manufacturing process |
-
2009
- 2009-12-31 CN CN200910238895A patent/CN101764193A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007214471A (en) * | 2006-02-13 | 2007-08-23 | Matsushita Electric Ind Co Ltd | Light-emitting module and method of manufacturing same |
| CN101415295A (en) * | 2007-10-19 | 2009-04-22 | 晟茂（青岛）先进材料有限公司 | Graphite-based novel electronic circuit board and preparation technique thereof |
| CN101509650A (en) * | 2009-03-13 | 2009-08-19 | 东莞市翔龙能源科技有限公司 | Heat conduction and dissipation device and heat conduction base of high-power LED lamp and manufacturing process |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102427108A (en) * | 2011-11-15 | 2012-04-25 | 中国科学院半导体研究所 | Flip-chip bonding structure for multi-current injection region device and manufacturing method thereof |
| CN103118492A (en) * | 2013-01-31 | 2013-05-22 | 蚌埠德豪光电科技有限公司 | Aluminum substrate, method for manufacturing same and LED light source with aluminum substrate |
| CN104460903A (en) * | 2014-12-03 | 2015-03-25 | 吉首大学 | Radiator for notebook computer |
| CN104460903B (en) * | 2014-12-03 | 2018-08-14 | 吉首大学 | Notebook PC radiator |
| CN111195802A (en) * | 2018-11-16 | 2020-05-26 | 泰州友润电子科技股份有限公司 | Production process of lead frame with positioning function |
| CN111443109A (en) * | 2019-01-16 | 2020-07-24 | 国网宁夏电力有限公司 | Condensation alarm induction plate for mechanism box of transformer substation |
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Application publication date: 20100630 |