CN101762983A - Photoresist coating process using ordinary nozzle for reducing inhibitive gum consumption - Google Patents
Photoresist coating process using ordinary nozzle for reducing inhibitive gum consumption Download PDFInfo
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- CN101762983A CN101762983A CN200810207833A CN200810207833A CN101762983A CN 101762983 A CN101762983 A CN 101762983A CN 200810207833 A CN200810207833 A CN 200810207833A CN 200810207833 A CN200810207833 A CN 200810207833A CN 101762983 A CN101762983 A CN 101762983A
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- silicon chip
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- nozzle
- rotational speed
- coating process
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 83
- 238000000576 coating method Methods 0.000 title claims abstract description 28
- 230000002401 inhibitory effect Effects 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 77
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 76
- 239000010703 silicon Substances 0.000 claims abstract description 76
- 230000003068 static effect Effects 0.000 claims abstract description 21
- 239000002904 solvent Substances 0.000 claims abstract description 16
- 239000011248 coating agent Substances 0.000 claims abstract description 8
- 239000007921 spray Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 15
- 230000008569 process Effects 0.000 abstract description 10
- 238000005507 spraying Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- Application Of Or Painting With Fluid Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention discloses a photoresist coating process using an ordinary nozzle for reducing inhibitive gum consumption, which utilizes a spare nozzle and adds a solvent into a pipeline of the spare nozzle. The photoresist coating process comprises the following steps: moving the spare nozzle to the center of a silicon chip, and keeping the silicon chip static; spraying the solvent onto the silicon chip by the spare nozzle, and keeping the silicon chip static; returning the spare nozzle, and keeping the silicon chip static; moving a photoresist nozzle to the center of the silicon chip, and keeping the silicon chip static; acceleratingly rotating the silicon chip to a first rotation speed; spraying photoresist onto the silicon chip by the photoresist nozzle, and keeping the silicon chip at the first rotation speed; deceleratingly rotating the silicon chip to a second rotation speed, wherein the second rotation speed is lower than the first rotation speed; keeping the silicon chip rotating at the second rotation speed for a first time, and returning the photoresist nozzle. In the invention, by utilizing the spare photoresist nozzle without reconstructing the ordinary photoresist coating device, a new process is combined, and the photoresist using amount can be saved by 45%.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, relate to the photoresist coating process.
Background technology
Photoresist coating is the important process in the semi-conductor silicon chip manufacture process, and conventional lithography glue spraying coating process is as follows: during the static or high speed rotating of silicon chip with jet-coating photoresit on the surface, rotate again about 20 seconds.8 inches silicon chips photoresist use amount of standard in the industry are every of 3ml/.
Because the price comparison costliness of photoresist, and use is unfavorable for environmental protection in a large number, therefore, for the use amount that reduces photoresist general demand is arranged in the industry.
Under such background, developed the RRC photoresist coating adhesive process that reduces resistance gum consumption (Reduced ResistConsumption): elder generation is at the organic solvent of silicon chip stationary state spray 2ml before the spraying photoresist, the high speed rotating silicon chip makes solvent spill out at silicon chip surface then, photoresist is sprayed on the silicon chip when solvent spills out, because the lubrication of solvent, photoresist can be paved with silicon chip surface rapidly, reaches desirable spraying effect.Under the RRC technology, the photoresist consumption can be reduced to every of 1ml/.
Though RRC technology can reduce the consumption of photoresist effectively, the RRC coating technique needs special hardware RRC nozzle (RRC Nozzle) and special-purpose Control Software, generally is applied on the comparatively senior photoetching automatic double surface gluer, realizes that cost is also than higher.
For common photoresist automatic double surface gluer,, also do not have control corresponding software, so the current stage can't be used the step process that is coated with that effectively reduces the photoresist consumption owing to there is not special-purpose RRC nozzle.
Summary of the invention
The present invention aims to provide a kind of method that is coated with step process that can use the plain nozzle realization reduction photoresist consumption of common photoresist automatic double surface gluer.
According to embodiments of the invention, a kind of photoresist coating process that uses plain nozzle realize to reduce the resistance gum consumption is provided, utilize idle nozzle, in the pipeline of the nozzle of free time, add solvent, this photoresist coating process comprises:
The nozzle of free time is moved to the silicon chip center, and it is static that silicon chip keeps;
Idle nozzle ejection of solvent on silicon chip, silicon chip keep static;
The idle mouth that bumps returns, and it is static that silicon chip keeps;
The photoresist nozzle moves to the silicon chip center, and it is static that silicon chip keeps;
Quicken rotation silicon chip to the first rotational speed;
The photoresist nozzle sprays photoresist on silicon chip, silicon chip keeps first rotational speed;
With rotational delay to the second rotational speed of silicon chip, second rotational speed is less than first rotational speed;
Keep silicon chip with second rotational speed rotation very first time, the photoresist nozzle returns.
Wherein, the amount of idle nozzle ejection of solvent on silicon chip is the 1.5-2 milliliter, first rotational speed is 3000-4000 rev/min, silicon chip accelerates to first rotational speed at 0.1-0.3 in the time of second, second rotational speed is 100 rev/mins, silicon chip decelerates to second rotational speed at 0.1-0.3 in the time of second, and the very first time is 1 second.
In the above-mentioned method, the photoresist automatic double surface gluer can comprise more than one photoresist nozzle, is respectively applied for the different photoresist of coating, for each photoresist nozzle and by the photoresist that this nozzle was coated with, repeats above-mentioned step.
Adopt technical scheme of the present invention, can not increase under the condition of cost, utilize idle photoresist nozzle,, reach the effect of saving photoresist consumption 45% in conjunction with new technological process common photoresist automatic double surface gluer not being transformed.
Description of drawings
The above and other features of the present invention, character and advantage will become more obvious by the description below in conjunction with drawings and Examples, in the accompanying drawings, identical Reference numeral is represented identical feature all the time, wherein:
Fig. 1 has disclosed the process flow diagram of realizing reducing the photoresist coating process that hinders gum consumption according to the use plain nozzle of one embodiment of the invention.
Embodiment
With reference to shown in Figure 1, the present invention has disclosed a kind of photoresist coating process that uses plain nozzle to realize reducing the resistance gum consumption, utilizes idle nozzle, adds solvent in the pipeline of the nozzle of free time, and this photoresist coating process comprises:
100. the nozzle of free time is moved to the silicon chip center, and it is static that silicon chip keeps;
102. idle nozzle ejection of solvent on silicon chip, silicon chip keep static;
104. the idle mouth that bumps returns, it is static that silicon chip keeps;
106. the photoresist nozzle moves to the silicon chip center, it is static that silicon chip keeps;
108. quicken rotation silicon chip to the first rotational speed;
110. the photoresist nozzle sprays photoresist on silicon chip, silicon chip keeps first rotational speed;
112. with rotational delay to the second rotational speed of silicon chip, second rotational speed is less than first rotational speed;
114. keep silicon chip with second rotational speed rotation very first time, the photoresist nozzle returns.
Wherein, each parameter value in the above-mentioned technological process is as follows:
The amount of idle nozzle ejection of solvent on silicon chip is the 1.5-2 milliliter.
First rotational speed is 3000-4000 rev/min.
Silicon chip accelerates to first rotational speed at 0.1-0.3 in the time of second.
Second rotational speed is 100 rev/mins.
Silicon chip decelerates to second rotational speed at 0.1-0.3 in the time of second.
The very first time is 1 second.
In this method, the photoresist automatic double surface gluer can comprise more than one photoresist nozzle, is respectively applied for the different photoresist of coating, for each photoresist nozzle and by the photoresist that this nozzle was coated with, repeats above-mentioned step.
Introduce concrete use of above-mentioned method on DNS80B photoresist automatic double surface gluer below, DNS80B photoresist automatic double surface gluer has the nozzle of 4 photoresists, usually, have only 3 nozzles (being called nozzle No. 1-No. 3) wherein that photoresist can be installed, and another nozzle (being called nozzle No. 4) is to be in idle state.At this moment, No. 4 idle nozzle utilizations wherein can be loaded onto solvent, as OK-73 etc., can operate following (No. 1-No. 3 photoresists of photoresist called after in No. 1-No. 3 nozzles afterwards.
S1. No. 4 nozzles are moved to the silicon chip center, it is static that silicon chip keeps;
The S2.4 nozzle sprays the solvent of 1.5-2 milliliter on silicon chip, it is static that silicon chip keeps;
Bump mouth S3.4 number and return, it is static that silicon chip keeps;
The S4.1 nozzle moves to the silicon chip center, and it is static that silicon chip keeps;
S5. quicken the rotation silicon chip in the time of second to 3000-4000 rev/min at 0.1-0.3;
The S6.1 nozzle sprays photoresist No. 1 on silicon chip, silicon chip keeps 3000-4000 rev/min rotating speed;
S7. 0.1-0.3 in the time of second with the rotational delay to 100 of silicon chip rev/min;
S8. keep silicon chip with 100 rev/mins of rotations 1 second, No. 1 nozzle returns;
Repeating step S1-S8, wherein No. 1 nozzle and No. 1 photoresist change No. 2 nozzles and No. 2 photoresists into;
Repeating step S1-S8 once more, wherein No. 1 nozzle and No. 1 photoresist change No. 3 nozzles and No. 3 photoresists into.
Adopt technical scheme of the present invention, can not increase under the condition of cost, utilize idle photoresist nozzle,, reach the effect of saving photoresist consumption 45% in conjunction with new technological process common photoresist automatic double surface gluer not being transformed.
The foregoing description provides to being familiar with the person in the art and realizes or use of the present invention; those skilled in the art can be under the situation that does not break away from invention thought of the present invention; the foregoing description is made various modifications or variation; thereby protection scope of the present invention do not limit by the foregoing description, and should be the maximum magnitude that meets the inventive features that claims mention.
Claims (8)
1. a photoresist coating process that uses plain nozzle realize to reduce the resistance gum consumption is characterized in that, utilizes idle nozzle, adds solvent in the pipeline of the nozzle of described free time, and described photoresist coating process comprises:
The nozzle of free time is moved to the silicon chip center, and it is static that silicon chip keeps;
Idle nozzle ejection of solvent on silicon chip, silicon chip keep static;
The idle mouth that bumps returns, and it is static that silicon chip keeps;
The photoresist nozzle moves to the silicon chip center, and it is static that silicon chip keeps;
Quicken rotation silicon chip to the first rotational speed;
The photoresist nozzle sprays photoresist on silicon chip, silicon chip keeps first rotational speed;
With rotational delay to the second rotational speed of silicon chip, second rotational speed is less than first rotational speed;
Keep silicon chip with second rotational speed rotation very first time, the photoresist nozzle returns.
2. photoresist coating process as claimed in claim 1 is characterized in that,
The amount of the nozzle of described free time ejection of solvent on silicon chip is the 1.5-2 milliliter.
3. photoresist coating process as claimed in claim 1 is characterized in that,
First rotational speed is 3000-4000 rev/min.
4. photoresist coating process as claimed in claim 3 is characterized in that,
Silicon chip accelerates to described first rotational speed at 0.1-0.3 in the time of second.
5. photoresist coating process as claimed in claim 1 is characterized in that,
Second rotational speed is 100 rev/mins.
6. photoresist coating process as claimed in claim 5 is characterized in that,
Silicon chip decelerates to described second rotational speed at 0.1-0.3 in the time of second.
7. photoresist coating process as claimed in claim 1 is characterized in that,
The described very first time is 1 second.
8. photoresist coating process as claimed in claim 1 is characterized in that, comprises more than one photoresist nozzle, is respectively applied for the different photoresist of coating, for each photoresist nozzle and by the photoresist that this nozzle was coated with, repeats above-mentioned step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810207833A CN101762983A (en) | 2008-12-25 | 2008-12-25 | Photoresist coating process using ordinary nozzle for reducing inhibitive gum consumption |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810207833A CN101762983A (en) | 2008-12-25 | 2008-12-25 | Photoresist coating process using ordinary nozzle for reducing inhibitive gum consumption |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101762983A true CN101762983A (en) | 2010-06-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810207833A Pending CN101762983A (en) | 2008-12-25 | 2008-12-25 | Photoresist coating process using ordinary nozzle for reducing inhibitive gum consumption |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102323718A (en) * | 2011-08-01 | 2012-01-18 | 上海先进半导体制造股份有限公司 | Defect monitoring method of photoresist coating process |
| CN104076609A (en) * | 2014-07-11 | 2014-10-01 | 上海先进半导体制造股份有限公司 | Coating process of photoresist |
| CN108196431A (en) * | 2018-01-02 | 2018-06-22 | 京东方科技集团股份有限公司 | Photoresist painting method and coating machine |
| CN114849990A (en) * | 2022-07-05 | 2022-08-05 | 宁波润华全芯微电子设备有限公司 | Photoresist nozzle device |
-
2008
- 2008-12-25 CN CN200810207833A patent/CN101762983A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102323718A (en) * | 2011-08-01 | 2012-01-18 | 上海先进半导体制造股份有限公司 | Defect monitoring method of photoresist coating process |
| CN104076609A (en) * | 2014-07-11 | 2014-10-01 | 上海先进半导体制造股份有限公司 | Coating process of photoresist |
| CN108196431A (en) * | 2018-01-02 | 2018-06-22 | 京东方科技集团股份有限公司 | Photoresist painting method and coating machine |
| CN114849990A (en) * | 2022-07-05 | 2022-08-05 | 宁波润华全芯微电子设备有限公司 | Photoresist nozzle device |
| CN114849990B (en) * | 2022-07-05 | 2022-09-23 | 宁波润华全芯微电子设备有限公司 | Photoresist nozzle device |
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Application publication date: 20100630 |