CN101760782A - Metallic heating body - Google Patents
Metallic heating body Download PDFInfo
- Publication number
- CN101760782A CN101760782A CN200910196352A CN200910196352A CN101760782A CN 101760782 A CN101760782 A CN 101760782A CN 200910196352 A CN200910196352 A CN 200910196352A CN 200910196352 A CN200910196352 A CN 200910196352A CN 101760782 A CN101760782 A CN 101760782A
- Authority
- CN
- China
- Prior art keywords
- heating body
- metallic
- metallic heating
- metal
- bending
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a metallic heating body. A crystal growth thermal field and consists of a metallic flange and the metallic heating body, wherein the metallic flange is fixed at the position of an opening of the metallic heating body, and the metallic heating body is integrated by the metallic flange. The metallic heating body is characterized in that: the metallic heating body is formed by bending and combining metallic heating wires, and the distance between and the closely spaced degree of the bent metallic heating wires are regular or irregular; and the height of the formed metallic heating body is 100 to 2,000mm. The metallic heating body has the advantages that: the temperature in the metallic heating body ranges from 1,000 to 2,500 DEG C, and the temperatures and the temperature distribution modes needed to grow different crystals are achieved by adjusting the distance, the closely spaced degree, the bending type and the height, so that the size and quality of the crystals are improved, and the problem of the difficult growth of the large-size high-temperature oxide crystals is solved.
Description
Technical field
The present invention is the crystal growth thermal field, the metallic heating body of the controlled gradient of particularly a kind of multi-usage.
Background technology
Along with the quality and the size of the development of optical communication, laser industry and LED industry, the various smooth functional crystal materials that need are increasing.There is this technical barrier in the light functional crystal of growth of large size high quality especially high-temp oxide crystal, and key is the problem that solves heating element and thermograde.
Summary of the invention
Technical problem solved by the invention is to provide the versatility metallic heating body of one kind of multiple method growing high-temp oxide crystals, regulate the temperature field by the design of heating element, and obtain needed high temperature of crystal growth and temperature distribution, thereby improved crystalline size and quality, solved the growth difficult problem of large size high-temp oxide crystal.
Technical problem solved by the invention realizes by the following technical solutions:
A kind of metallic heating body, constitute by metal flange and metallic heating body, metal flange is fixed on the opening part of metallic heating body, by metal flange metallic heating body is fixed into one, it is characterized in that: described metallic heating body is combined by the bending of metal heating wire, spacing between the metal heating wire after the described bending, solid matter degree present irregular or regular shape, and the metallic heating body height of formation is between 100-2000mm.
The cross section of described metal heating wire is thread, bar-shaped, sheet or circle shape, and diameter constitutes bar-shaped wire and is no less than two between 0.1-10mm.
The bottom surface that forms metallic heating body in described metal heating wire bending is the bottom surface heating element, and the distribution mode of described bottom surface heating element is even shape or inhomogeneous shape, and the center has the hole or the center does not have the hole.
The bending of described every metal heating wire is the ∩ type, has various ways on ∩ type folding surface.
Described metal flange is made of multi-disc metal flange sheet, and two chip architectures are arranged, three chip architectures, four chip architectures, five chip architectures and six chip architectures.
The invention has the beneficial effects as follows that accessible temperature range is between 1000 ~ 2500 ℃ in the metallic heating body, spacing, solid matter degree, bending form by regulating metallic heating body and highly can obtain grow needed temperature of different crystal and temperature distribution, thereby improved crystalline size and quality, solved the growth difficult problem of large size high-temp oxide crystal.
Description of drawings
Fig. 1 is the structural representation of metallic heating body of the present invention;
Fig. 2 is the vertical view of Fig. 1;
Fig. 3 is metallic heating body bottom surface metal heating wire uniform distribution or center non-porous structure synoptic diagram;
Fig. 4 is the porose structural representation of metallic heating body bottom surface metal heating wire uneven distribution or center;
Fig. 5 is the multiple bending synoptic diagram of metal heating wire;
Fig. 6 is a metal flange holder structure synoptic diagram.
Embodiment
For technique means, creation characteristic that the present invention is realized, reach purpose and effect is easy to understand, below in conjunction with concrete diagram, further set forth the present invention.
As illustrated in fig. 1 and 2, a kind of metallic heating body, constitute by metal flange 1 and metallic heating body 2, metal flange 1 is fixed on the opening part of metallic heating body 2, by metal flange 1 metallic heating body 2 is fixed into one, metallic heating body 2 is combined by 3 bendings of metal heating wire, and the spacing between the metal heating wire 3 after the bending, solid matter degree present irregular or regular shape, and the metallic heating body height of formation is between 100-2000mm.Wherein the diameter of section of metal heating wire 3 is between 0.1-10mm.
As shown in Figure 3 and Figure 4, the bottom surface that 3 bendings of metal heating wire form metallic heating body is a bottom surface heating element 4, and the distribution mode of bottom surface heating element 4 is even shape or inhomogeneous shape, and the center has the hole or the center does not have the hole.
As shown in Figure 5, every metal heating wire 3 bendings are the ∩ type, have various ways on ∩ type folding surface.
As shown in Figure 6, metal flange 1 is made of multi-disc metal flange sheet, and two chip architectures are arranged, and three chip architectures, four chip architectures, five chip architectures and six chip architectures are fixed on the metal flange seat 5.
More than show and described ultimate principle of the present invention and principal character and advantage of the present invention.The technician of the industry should understand; the present invention is not restricted to the described embodiments; that describes in the foregoing description and the specification sheets just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.The claimed scope of the present invention is defined by appending claims and equivalent thereof.
Claims (5)
1. metallic heating body, constitute by metal flange and metallic heating body, metal flange is fixed on the opening part of metallic heating body, by metal flange metallic heating body is fixed into one, it is characterized in that: described metallic heating body is combined by the bending of metal heating wire, spacing between the metal heating wire after the described bending, solid matter degree present irregular or regular shape, and the metallic heating body height of formation is between 100-2000mm.
2. according to the described new type of metal heating element of claim 1, it is characterized in that: the cross section of described metal heating wire is thread, bar-shaped, sheet or circle shape, and diameter constitutes bar-shaped wire and is no less than two between 0.1-10mm.
3. according to the described new type of metal heating element of claim 1, it is characterized in that: the bottom surface that described metal heating wire bending forms metallic heating body is the bottom surface heating element, the distribution mode of described bottom surface heating element is even shape or inhomogeneous shape, and the center has the hole or the center does not have the hole.
4. according to the described new type of metal heating element of claim 1, it is characterized in that: the bending of described every metal heating wire is the ∩ type, has various ways on ∩ type folding surface.
5. according to the described new type of metal heating element of claim 1, it is characterized in that: described metal flange is made of multi-disc metal flange sheet, and two chip architectures are arranged, three chip architectures, four chip architectures, five chip architectures and six chip architectures.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910196352A CN101760782A (en) | 2009-09-25 | 2009-09-25 | Metallic heating body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910196352A CN101760782A (en) | 2009-09-25 | 2009-09-25 | Metallic heating body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101760782A true CN101760782A (en) | 2010-06-30 |
Family
ID=42492153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910196352A Pending CN101760782A (en) | 2009-09-25 | 2009-09-25 | Metallic heating body |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101760782A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102732971A (en) * | 2012-07-16 | 2012-10-17 | 登封市蓝天石化光伏电力装备有限公司 | Heating device for crystal growing furnace and corundum single crystal growing furnace |
| CN102936753A (en) * | 2012-10-13 | 2013-02-20 | 洛阳金诺机械工程有限公司 | Cage-type heating unit for crystal growth |
| CN112279260A (en) * | 2020-10-30 | 2021-01-29 | 广东先导稀材股份有限公司 | Preparation facilities of high-purity boron crystal and high-purity boron powder |
-
2009
- 2009-09-25 CN CN200910196352A patent/CN101760782A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102732971A (en) * | 2012-07-16 | 2012-10-17 | 登封市蓝天石化光伏电力装备有限公司 | Heating device for crystal growing furnace and corundum single crystal growing furnace |
| CN102936753A (en) * | 2012-10-13 | 2013-02-20 | 洛阳金诺机械工程有限公司 | Cage-type heating unit for crystal growth |
| CN112279260A (en) * | 2020-10-30 | 2021-01-29 | 广东先导稀材股份有限公司 | Preparation facilities of high-purity boron crystal and high-purity boron powder |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5925319B2 (en) | SiC single crystal manufacturing apparatus and SiC single crystal manufacturing method | |
| CN203485502U (en) | Quartz crucible coating for producing efficient polycrystalline silicon ingot | |
| KR101704147B1 (en) | Device for producing polycrystal silicon and method for producing polycrystal silicon | |
| CN203007477U (en) | Structure of single-crystal furnace thermal field for growth of sapphire crystal | |
| CN102534758A (en) | Growth method and growth device for bar-shaped sapphire crystals | |
| CN103422162A (en) | Single crystal furnace thermal field structure for square sapphire generation | |
| CN101760782A (en) | Metallic heating body | |
| CN102560631A (en) | Growth method and equipment of sapphire crystal | |
| CN102732947A (en) | Ingot thermal field for growing pure quasi-monocrystalline | |
| CN201842895U (en) | Graphite crucible of monocrystalline silicon growing furnace | |
| CN101760781A (en) | Multifunctional crystal growth system of modular design | |
| KR20170083080A (en) | Quartz substrate such as for use with carbon nanotubes | |
| CN103628127A (en) | DSS (directional solidification system) quasi-monocrystal silicon growth furnace and growth method of quasi-monocrystal silicon | |
| CN201682637U (en) | Novel metal heating element | |
| CN104878451B (en) | Nitride single crystal growth device | |
| CN103160919B (en) | Heating electrode in a kind of kyropoulos production unit of sapphire crystal | |
| CN202297860U (en) | Single crystal furnace thermal field with lifting mechanism | |
| CN102433585A (en) | Thermal field structure of quasi-monocrystal ingot furnace | |
| CN102485978A (en) | Insulating barrel capable of adjusting furnace temperature gradient | |
| CN103469304A (en) | Device and method for growing multiple formed sapphire crystals | |
| CN104610269A (en) | Novel crystal structure NiPc (omega-NiPc) nanowire and preparation method thereof | |
| CN104120487A (en) | Growth method and growth equipment of platelike sapphire crystals | |
| CN207130374U (en) | The heating body structure of large-size sapphire single-crystal stove | |
| CN103225106B (en) | A kind of thermal field casting high-efficiency polycrystalline | |
| CN206494985U (en) | A kind of guided mode plate of use EFG technique growing sapphire crystal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: JIANGSU XINTONG PHOTOELECTRIC TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: SHANGHAI UNIONLIGHT PHOTOELECTRIC TECHNOLOGY CO., LTD. Effective date: 20110531 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201800 BOTTOM FLOOR, BUILDING 6, NO. 328, JIAJIAN HIGHWAY, MALU TOWN, JIADING DISTRICT, SHANGHAI TO: 214000 NO. 2, EAST 2ND BRANCH ROAD, JINSHANBEI SCIENCE + TECHNOLOGY INDUSTRIAL PARK, JIANGHAI WEST ROAD, WUXI CITY, JIANGSU PROVINCE |
|
| TA01 | Transfer of patent application right |
Effective date of registration: 20110531 Address after: 214000, No. two, 2 East Branch, Jinshan Science and Technology Industrial Park, Jianghai West Road, Wuxi, Jiangsu Applicant after: Jiangsu Xintong Photoelectric Technology Co., Ltd. Address before: 201800 Shanghai Jiading District Malu Town Jiajian Road No. 328 building 6 floor Applicant before: Shanghai Unionlight Photoelectric Technology Co., Ltd. |
|
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20100630 |