CN101752319B - Manufacture method of thin film transistor liquid crystal display array substrate - Google Patents
Manufacture method of thin film transistor liquid crystal display array substrate Download PDFInfo
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- CN101752319B CN101752319B CN2008102404466A CN200810240446A CN101752319B CN 101752319 B CN101752319 B CN 101752319B CN 2008102404466 A CN2008102404466 A CN 2008102404466A CN 200810240446 A CN200810240446 A CN 200810240446A CN 101752319 B CN101752319 B CN 101752319B
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- 239000000758 substrate Substances 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 239000010409 thin film Substances 0.000 title claims abstract description 26
- 239000004973 liquid crystal related substance Substances 0.000 title abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 99
- 238000005516 engineering process Methods 0.000 claims abstract description 71
- 239000010408 film Substances 0.000 claims abstract description 70
- 239000000203 mixture Substances 0.000 claims abstract description 51
- 238000002161 passivation Methods 0.000 claims abstract description 47
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 238000000151 deposition Methods 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 15
- 238000009413 insulation Methods 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 238000002207 thermal evaporation Methods 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 239000007792 gaseous phase Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract 2
- 238000002360 preparation method Methods 0.000 description 6
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 208000034189 Sclerosis Diseases 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention relates to a manufacture method of a thin film transistor liquid crystal display array substrate, which comprises the following steps of: depositing a grid metal film, and forming a graph comprising a grid line, a grid electrode and a common electrode line through a composition process; sequentially depositing a grid insulation layer, a semiconductor layer, a doped semiconductor layer and a source drain metal film, and forming a graph comprising a data line, a source electrode, a drain electrode and a thin film transistor (TFT) channel region by adopting a half tone or gray mask plate; depositing a passivation layer and forming a passivation layer pit in a pixel region through technologies of exposure, development and etching after coating photoresist, wherein a part of the drain electrode is exposed out of the passivation layer pit; and depositing a transparent conductive film, removing the photoresist and the transparent conductive film covering on the photoresist by utilizing a membrane-covered peeling process and forming a pixel electrode graph in the passivation layer pit, wherein a pixel electrode is directly connected with the drain electrode. The invention shortens the production time, enhances the production efficiency and lowers the production cost.
Description
Technical field
The present invention relates to the manufacture method of a kind of manufacture method of LCD, particularly a kind of thin-film transistor LCD device array substrate.
Background technology
Thin Film Transistor-LCD (Thin Film Transistor Liquid CrystalDisplay is called for short TFT-LCD) has characteristics such as volume is little, low in energy consumption, radiationless, has occupied leading position in current flat panel display market.For TFT-LCD, array base palte and manufacturing process have determined its properties of product, rate of finished products and price.For the price that reduces TFT-LCD effectively, improve rate of finished products, the manufacturing process of TFT-LCD array base palte progressively obtains simplifying, and has developed into four compositions (4mask) technology based on the slit photoetching technique from seven compositions (7mask) technology of beginning.
Four composition technologies of prior art specifically comprise: adopt the normal masks plate to form grid line, gate electrode and public electrode line graph by composition technology; Adopt halftoning or gray mask plate mask to form active layer, data wire, source electrode, drain electrode and TFT raceway groove figure by composition technology; Adopt the normal masks plate to form the passivation layer via hole figure in the drain electrode position by composition technology; Adopt the normal masks plate to form pixel electrode by composition technology, pixel electrode is connected with drain electrode by passivation layer via hole.
Because each composition technology all needs the figure transfer of mask plate to film pattern, and each layer film figure all needs accurately to cover on another layer film figure, therefore in TFT-LCD array base palte manufacturing process, the quantity of used mask plate is few more, production time is few more, production efficiency is high more, and production cost is just low more.
Summary of the invention
The manufacture method that the purpose of this invention is to provide a kind of thin-film transistor LCD device array substrate adopts the manufacturing that three times composition technology realizes array base palte, shortens the production time, enhances productivity, and reduces production costs.
To achieve these goals, the invention provides a kind of manufacture method of thin-film transistor LCD device array substrate, comprising:
Described step 2 comprises:
Step 21, on the substrate of completing steps 1, using plasma strengthens chemical gaseous phase depositing process and deposits gate insulation layer, semiconductor layer and doping semiconductor layer successively;
Step 22, on the substrate of completing steps 21, adopt the method sedimentary origin of magnetron sputtering or thermal evaporation to leak metallic film;
Step 23, on the substrate of completing steps 22, apply one deck photoresist;
Step 24, employing halftoning or the exposure of gray mask plate, make photoresist formation photoresist remove zone, photoresist fully and partly remove zone and the complete reserve area of photoresist, wherein the complete reserve area of photoresist is corresponding to data wire, source electrode and drain electrode figure region, photoresist is partly removed the zone corresponding to TFT channel region figure region, and photoresist is removed the zone fully corresponding to the zone beyond the above-mentioned figure; After the development treatment, the photoresist thickness of the complete reserve area of photoresist does not change, and photoresist is partly removed the photoresist thickness attenuation in zone, and photoresist is removed the photoresist in zone fully and removed fully, exposes this regional source and leaks metallic film;
Step 25, employing wet-etching technology carry out the etching first time, etch away source leakage metallic film, doping semiconductor layer and semiconductor layer that photoresist is removed the zone fully successively, form data wire, source electrode and drain electrode figure;
Step 26, employing cineration technics are removed the photoresist that photoresist is partly removed the zone fully, expose this regional source and leak metallic film;
Step 27, employing dry etch process are carried out the etching second time, etch away photoresist fully and partly remove the source leakage metallic film and the doping semiconductor layer in zone, and etch away the semiconductor layer of segment thickness, and make this zone expose semiconductor layer, form TFT channel region figure;
Step 28, peel off remaining photoresist.
Described step 3 comprises:
Step 31, on the substrate of completing steps 2, using plasma strengthens the chemical gaseous phase depositing process deposit passivation layer;
Step 32, on the substrate of completing steps 31, apply one deck photoresist;
Step 33, employing normal masks plate form the passivation layer pit by exposure, development and dry etch process in pixel region, the passivation layer in the passivation layer pit is etched away fully, and exposes the part drain electrode in the passivation layer pit.
Described step 4 comprises:
Step 41, utilize the plasma curing photoresist;
The method deposition layer of transparent conductive film of step 42, employing magnetron sputtering or thermal evaporation;
Step 43, utilize band film stripping technology to remove photoresist and cover transparent conductive film on the photoresist, form the pixel electrode figure in described passivation layer pit, described pixel electrode directly is connected with drain electrode.
Described step 41 is specially: adopt parallel flat formula plasma discharge devices by the curing of plasma discharge realization to photoresist, improve the stability of follow-up transparent conductive film sputtering technology and reduce the pollution of photoresist to transparent conductive film.
Described employing parallel flat formula plasma discharge devices realizes the curing of photoresist is specially by plasma discharge: adopt parallel flat formula plasma discharge devices, gas pressure is 5Pa～40Pa, plasma discharge power is 150W～250W, polar plate spacing is 50-70mm up and down, be 25 minutes～35 minutes curing time, by plasma discharge photoresist is cured processing.Preferably, described gas pressure is 30Pa, and plasma discharge power is 200W, and spacing is 60mm, and be 30 minutes curing time.
The invention provides a kind of manufacture method of thin-film transistor LCD device array substrate, at first form grid line, gate electrode and public electrode line graph by the composition technology first time of using the normal masks plate, use halftoning or gray mask plate by the data wire of composition technology formation for the second time, source electrode, drain electrode and TFT channel region then, passing through for the third time at last, composition technology forms the passivation layer pit pattern and form the pixel electrode figure in the passivation layer pit.Further, the present invention adopts parallel flat formula plasma discharge devices by the curing of plasma discharge realization to photoresist, improve the stability of follow-up transparent conductive film sputtering technology and reduce the pollution of photoresist, guaranteed preparation technology's reliability and product quality the transparent conductive film film.The present invention can finish the preparation of thin-film transistor LCD device array substrate by three composition technology, simplify prior art and formed pixel electrode is connected via hole with drain electrode step, reduced the production equipment input, shortened the production time, improved production efficiency, reduced production cost, preparation technology of the present invention is simple, reliable, in actual production, realize easily, be with a wide range of applications.In addition, pixel electrode of the present invention directly is connected to have improved with drain electrode and electrically contacts, and has improved yields.
Description of drawings
Fig. 1 is the flow chart of the manufacture method of thin-film transistor LCD device array substrate of the present invention;
Fig. 2 is the manufacture method of thin-film transistor LCD device array substrate of the present invention plane graph after the composition technology for the first time;
Fig. 3 be among Fig. 2 A-A to profile;
Fig. 4 is the manufacture method of thin-film transistor LCD device array substrate of the present invention structural representation after the composition technology for the second time;
Fig. 5 be among Fig. 4 B-B to profile;
Fig. 6 is the structural representation behind the coating photoresist in the present invention's composition technology second time;
Fig. 7 is the structural representation behind the exposure imaging in the present invention's composition technology second time;
Fig. 8 is the present invention's structural representation after the etching for the first time in the composition technology for the second time;
Fig. 9 is the structural representation behind the cineration technics in the present invention's composition technology second time;
Figure 10 is the present invention's structural representation after the etching for the second time in the composition technology for the second time;
Figure 11 forms structural representation behind the passivation layer pit in the composition technology for the third time for the present invention;
Figure 12 be among Figure 11 C-C to profile;
Figure 13 is the present invention's structural representation behind the deposit transparent conductive film in the composition technology for the third time;
Figure 14 be among Figure 13 D-D to profile;
Figure 15 is the present invention's structural representation behind the deposit transparent conductive film in the composition technology for the third time;
Figure 16 be among Figure 15 E-E to profile.
Description of reference numerals:
The 1-substrate; The 2-grid line; The 3-gate electrode;
The 4-public electrode wire; The 5-gate insulation layer; The 6-semiconductor layer;
The 7-doping semiconductor layer; 8-source electrode; The 9-drain electrode;
The 10-data wire; The 11-passivation layer; Metallic film is leaked in the 12-source;
The 13-photoresist; 14-passivation layer pit; The 15-transparent conductive film;
The 16-pixel electrode.
Embodiment
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Fig. 1 is the flow chart of the manufacture method of thin-film transistor LCD device array substrate of the present invention, comprising:
Fig. 2～Figure 16 is the schematic diagram of the manufacture method of thin-film transistor LCD device array substrate of the present invention, further specify technical scheme of the present invention below by schematic diagram, in the following description, technology such as the alleged composition technology of the present invention comprises photoresist coating, mask, exposure, etching, peel off, wherein photoresist is example with the positive photoresist.
Fig. 2 is the manufacture method of thin-film transistor LCD device array substrate of the present invention plane graph after the composition technology for the first time, Fig. 3 be among Fig. 2 A-A to profile.Adopt the method for magnetron sputtering or thermal evaporation, go up deposition one deck grid metallic film at substrate 1 (as glass substrate or quartz base plate), the grid metallic film can adopt metal materials such as AlNu or Mo.Adopt the normal masks plate grid metallic film to be carried out composition, on substrate 1, form the figure that comprises grid line 2, gate electrode 3 and public electrode wire 4, as Fig. 2, shown in Figure 3 by composition technology.Public electrode wire 4 is between two adjacent grid lines 2, and is parallel with grid line 2 and be positioned at the middle part of viewing area, is used for and show electrode constitutes storage capacitance, forms storage capacitance structure of (Cs on Common) on public electrode wire.
Fig. 4 is the manufacture method of thin-film transistor LCD device array substrate of the present invention structural representation after the composition technology for the second time, Fig. 5 be among Fig. 4 B-B to profile.The present invention's composition technology for the second time is a kind of composition technology that adopts halftoning or gray mask plate, forms the figure that comprises data wire, source electrode, drain electrode and TFT channel region by a composition technology.
Fig. 6 applies for the second time structural representation behind the photoresist in the composition technology for the present invention, for B-B among Fig. 4 to profile.On the substrate of finishing the said structure figure, using plasma strengthens chemical vapour deposition (CVD) (being called for short PECVD) method, deposit gate insulation layer 5, semiconductor layer 6 and doping semiconductor layer (ohmic contact layer) 7 successively, gate insulation layer 5 can adopt SiNx, SiOx or SiOxNy.Adopt the method sedimentary origin of magnetron sputtering or thermal evaporation to leak metallic film 12 then, metallic film 12 is leaked in the source can adopt metal materials such as AlNu or Mo.Afterwards, leak coating one deck photoresist 13 on the metallic film 12 in the source, as shown in Figure 6.
Fig. 7 is the present invention's structural representation behind the exposure imaging in the composition technology for the second time, for B-B among Fig. 4 to profile.Adopt the exposure of halftoning or gray mask plate, make photoresist 13 form complete exposure area G1 (photoresist is removed the zone fully), partial exposure area G2 (photoresist is partly removed the zone) and unexposed area G3 (the complete reserve area of photoresist), wherein unexposed area G3 is corresponding to data wire, source electrode and drain electrode figure region, partial exposure area is corresponding to TFT channel region figure region, and complete exposure area is corresponding to the zone beyond the above-mentioned figure.After the development treatment, the thickness of unexposed area G3 photoresist does not change, the thickness attenuation of partial exposure area G2 photoresist, and the photoresist of complete exposure area G1 is removed fully, exposes this regional source and leaks metallic film 12, as shown in Figure 7.
Fig. 8 is the present invention's structural representation after the etching for the first time in the composition technology for the second time, for B-B among Fig. 4 to profile.Adopt wet-etching technology that complete exposure area G1 is carried out the etching first time, metallic film 12, doping semiconductor layer 7 and semiconductor layer 6 are leaked in the source that etches away complete exposure area G1 successively, form active layer, data wire, source electrode and drain electrode figure, wherein active layer is positioned at the gate electrode top, one end of source electrode is positioned on the active layer of gate electrode 3 tops, the other end is connected with data wire, and an end of drain electrode is positioned on the active layer of gate electrode 3 tops, as shown in Figure 8.
Fig. 9 is the present invention's structural representation behind the cineration technics in the composition technology for the second time, for B-B among Fig. 4 to profile.Adopt cineration technics, remove the photoresist of partial exposure area G2 fully, expose this regional source and leak metallic film 12, correspondingly, the thickness attenuation of unexposed area G3 photoresist is shown in Fig. 9.
Figure 10 is the present invention's structural representation after the etching for the second time in the composition technology for the second time, for B-B among Fig. 4 to profile.Adopt dry etch process that partial exposure area G2 is carried out the etching second time, metallic film 12 and doping semiconductor layer 7 are leaked in the source that etches away partial exposure area G2 fully, and etch away the semiconductor layer 6 of segment thickness, make this zone expose semiconductor layer 6, form TFT channel region figure, as shown in figure 10.
Afterwards, peel off remaining photoresist, form the figure that comprises data wire 10, source electrode 8, drain electrode 9 and TFT channel region, finish the composition technology second time of the manufacture method of thin-film transistor LCD device array substrate of the present invention, as Fig. 4, shown in Figure 5.After this composition technology, gate insulation layer covers whole base plate, the active layer figure is formed on the gate electrode top, and the active layer figure is etched away fully with the semiconductor layer and the doping semiconductor layer of exterior domain, but remains with semiconductor layer and doping semiconductor layer under data wire, source electrode and the drain electrode figure.
The present invention's composition technology for the third time is a kind of composition technology that adopts the normal masks plate, form passivation layer and pixel electrode by a composition technology, and pixel electrode is connected directly with drain electrode.
Figure 11 forms structural representation behind the passivation layer pit in the composition technology for the third time for the present invention, Figure 12 be among Figure 11 C-C to profile.On the substrate of finishing the said structure figure, adopt PECVD method deposition one deck passivation layer 11, passivation layer 11 can adopt SiNx or organic insulating material etc.On passivation layer 11, apply one deck photoresist 13 afterwards, adopt the normal masks plate by after exposure and developing, adopt dry etch process, in pixel region, form passivation layer pit 14, passivation layer in the passivation layer pit 14 is etched away fully, and expose part drain electrode 9 in the passivation layer pit 14, as Figure 11, shown in Figure 12.
Figure 13 is the present invention's structural representation behind the deposit transparent conductive film in the composition technology for the third time, Figure 14 be among Figure 13 D-D to profile.Keep photoresist 13, utilize plasma curing photoresist 13.Afterwards, adopt the method for magnetron sputtering or thermal evaporation, deposition layer of transparent conductive film 15, transparent conductive film 15 can adopt tin indium oxide (ITO) or indium zinc oxide (IZO), as Figure 13, shown in Figure 14.In this process, the purpose of utilizing the plasma curing photoresist is to make the photoresist sclerosis, to guarantee preparation technology's reliability and product quality.Utilize the plasma curing photoresist can adopt parallel flat formula plasma discharge devices, by the curing of plasma discharge realization, improve the stability of follow-up transparent conductive film sputtering technology and reduce the pollution of photoresist transparent conductive film to photoresist.Technological parameter is specially: adopt and contain CHF
3Deng the working gas that contains CxHy group gas,
Gas pressure is 5Pa～40Pa, and plasma discharge power is 150W～250W, and polar plate spacing is 50mm～70mm up and down, and be 25 minutes～35 minutes curing time, realizes curing to photoresist by plasma discharge in working gas atmosphere.Preferably, gas pressure is 30Pa, and plasma discharge power is 200W, and spacing is 60mm, and be 30 minutes curing time.In addition, can select low-temperature transparent conductive film preparation technology, as a-ITO low temperature sputtering technology in order to prevent among the transparent conductive film preparation technology to the damage of photoresist.
Figure 15 is the present invention's structural representation behind the deposit transparent conductive film in the composition technology for the third time, Figure 16 be among Figure 15 E-E to profile.At last, utilize the band film to peel off (LIFT-OFF) technology and remove photoresist and the transparent conductive film that covers on the photoresist, the transparent conductive film that is deposited in the passivation layer pit 14 is remained, form pixel electrode 16 figures at pixel region, the pixel electrode 16 that is positioned at passivation layer pit 14 directly is connected with the drain electrode 9 that passivation layer pit 14 exposes, as Figure 15, shown in Figure 16.
It should be noted that at last: above embodiment is only unrestricted in order to technical scheme of the present invention to be described, although the present invention is had been described in detail with reference to preferred embodiment, those of ordinary skill in the art is to be understood that, can make amendment or be equal to replacement technical scheme of the present invention, and not break away from the spirit and scope of technical solution of the present invention.
Claims (7)
1. the manufacture method of a thin-film transistor LCD device array substrate is characterized in that, comprising:
Step 1, on substrate deposition grid metallic film, form the figure that comprises grid line, gate electrode and public electrode wire by composition technology;
Step 2, on the substrate of completing steps 1, deposit gate insulation layer, semiconductor layer, doping semiconductor layer successively and metallic film is leaked in the source, adopt halftoning or gray mask plate to form the figure that comprises data wire, source electrode, drain electrode and TFT channel region by composition technology;
Step 3, on the substrate of completing steps 2 deposit passivation layer, apply photoresist after, in pixel region, form the passivation layer pit by exposure, development and etching technics, expose the part drain electrode in the described passivation layer pit;
Step 4, on the substrate of completing steps 3, utilize the plasma curing photoresist, the deposit transparent conductive film, utilize band film stripping technology to remove photoresist and cover transparent conductive film on the photoresist, form the pixel electrode figure in described passivation layer pit, described pixel electrode directly is connected with drain electrode.
2. the manufacture method of thin-film transistor LCD device array substrate according to claim 1 is characterized in that, described step 2 comprises:
Step 21, on the substrate of completing steps 1, using plasma strengthens chemical gaseous phase depositing process and deposits gate insulation layer, semiconductor layer and doping semiconductor layer successively;
Step 22, on the substrate of completing steps 21, adopt the method sedimentary origin of magnetron sputtering or thermal evaporation to leak metallic film;
Step 23, on the substrate of completing steps 22, apply one deck photoresist;
Step 24, employing halftoning or the exposure of gray mask plate, make photoresist formation photoresist remove zone, photoresist fully and partly remove zone and the complete reserve area of photoresist, wherein the complete reserve area of photoresist is corresponding to data wire, source electrode and drain electrode figure region, photoresist is partly removed the zone corresponding to TFT channel region figure region, and photoresist is removed the zone fully corresponding to the zone beyond the above-mentioned figure; After the development treatment, the photoresist thickness of the complete reserve area of photoresist does not change, and photoresist is partly removed the photoresist thickness attenuation in zone, and photoresist is removed the photoresist in zone fully and removed fully, exposes this regional source and leaks metallic film;
Step 25, employing wet-etching technology carry out the etching first time, etch away source leakage metallic film, doping semiconductor layer and semiconductor layer that photoresist is removed the zone fully successively, form data wire, source electrode and drain electrode figure;
Step 26, employing cineration technics are removed the photoresist that photoresist is partly removed the zone fully, expose this regional source and leak metallic film;
Step 27, employing dry etch process are carried out the etching second time, etch away photoresist fully and partly remove the source leakage metallic film and the doping semiconductor layer in zone, and etch away the semiconductor layer of segment thickness, and make this zone expose semiconductor layer, form TFT channel region figure;
Step 28, peel off remaining photoresist.
3. the manufacture method of thin-film transistor LCD device array substrate according to claim 1 is characterized in that, described step 3 comprises:
Step 31, on the substrate of completing steps 2, using plasma strengthens the chemical gaseous phase depositing process deposit passivation layer;
Step 32, on the substrate of completing steps 31, apply one deck photoresist;
Step 33, employing normal masks plate form the passivation layer pit by exposure, development and dry etch process in pixel region, the passivation layer in the passivation layer pit is etched away fully, and exposes the part drain electrode in the passivation layer pit.
4. the manufacture method of thin-film transistor LCD device array substrate according to claim 1 is characterized in that, described step 4 comprises:
Step 41, utilize the plasma curing photoresist;
The method deposition layer of transparent conductive film of step 42, employing magnetron sputtering or thermal evaporation;
Step 43, utilize band film stripping technology to remove photoresist and cover transparent conductive film on the photoresist, form the pixel electrode figure in described passivation layer pit, described pixel electrode directly is connected with drain electrode.
5. the manufacture method of thin-film transistor LCD device array substrate according to claim 4, it is characterized in that, described step 41 is specially: adopt parallel flat formula plasma discharge devices by the curing of plasma discharge realization to photoresist, improve the stability of follow-up transparent conductive film sputtering technology and reduce the pollution of photoresist to transparent conductive film.
6. the manufacture method of thin-film transistor LCD device array substrate according to claim 5, it is characterized in that, described employing parallel flat formula plasma discharge devices realizes the curing of photoresist is specially by plasma discharge: adopt parallel flat formula plasma discharge devices, gas pressure is 5Pa～40Pa, plasma discharge power is 150W～250W, polar plate spacing is 50-70mm up and down, be 25 minutes～35 minutes curing time, by plasma discharge photoresist is cured processing.
7. the manufacture method of thin-film transistor LCD device array substrate according to claim 6 is characterized in that, described gas pressure is 30Pa, and plasma discharge power is 200W, and spacing is 60mm, and be 30 minutes curing time.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101845083B1 (en) * | 2010-12-10 | 2018-04-04 | 동우 화인켐 주식회사 | Manufacturing method of an array substrate for liquid crystal display |
| CN102629581A (en) * | 2011-10-10 | 2012-08-08 | 北京京东方光电科技有限公司 | TFT array substrate, liquid crystal display panel method for manufacturing the array substrate |
| CN102723269B (en) * | 2012-06-21 | 2015-04-01 | 京东方科技集团股份有限公司 | Array base plate, method for manufacturing same, and display device |
| CN102955621B (en) * | 2012-10-19 | 2016-04-06 | 京东方科技集团股份有限公司 | Optical sensing formula touch-screen of dimension field mode and preparation method thereof is surpassed based on superelevation level |
| CN102955622B (en) * | 2012-10-19 | 2016-04-13 | 京东方科技集团股份有限公司 | Based on the optical sensing formula touch-screen and preparation method thereof of multi-dimensional electric field mode |
| CN102956551B (en) * | 2012-11-02 | 2015-01-07 | 京东方科技集团股份有限公司 | Fabrication method of array substrate, array substrate and display device |
| CN103887328B (en) * | 2012-12-21 | 2017-12-22 | 厦门天马微电子有限公司 | Thin-film transistor array base-plate, liquid crystal display device and manufacture method |
| CN103383925B (en) * | 2013-07-02 | 2015-06-03 | 京东方科技集团股份有限公司 | Display device, signal substrate of naked eye 3D function panel and manufacturing method of signal substrate |
| CN104298037B (en) * | 2014-10-20 | 2017-04-12 | 深圳市华星光电技术有限公司 | Glass panel and mask for manufacturing same |
| CN104701254B (en) | 2015-03-16 | 2017-10-03 | 深圳市华星光电技术有限公司 | A kind of preparation method of low-temperature polysilicon film transistor array base palte |
| CN107369715A (en) * | 2017-07-13 | 2017-11-21 | 南京中电熊猫平板显示科技有限公司 | A kind of manufacture method of thin film transistor (TFT) |
| CN109119428B (en) * | 2018-07-18 | 2020-07-28 | 深圳市华星光电技术有限公司 | Manufacturing method of TFT substrate |
| CN112768405A (en) * | 2021-01-15 | 2021-05-07 | 信利（惠州）智能显示有限公司 | Thin film transistor array substrate and manufacturing method thereof |
| CN113097227B (en) * | 2021-03-22 | 2022-10-21 | 北海惠科光电技术有限公司 | Thin film transistor, display device and thin film transistor preparation method |
| CN113534528A (en) * | 2021-07-28 | 2021-10-22 | 深圳莱宝高科技股份有限公司 | Pixel structure, manufacturing method of pixel structure and array substrate |
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| US5474911A (en) * | 1989-12-01 | 1995-12-12 | The Board Of Trustees Of Leland Stanford Jr. University | Promotion of high specificity molecular assembly |
| CN1987622A (en) * | 2005-12-23 | 2007-06-27 | 京东方科技集团股份有限公司 | Array base board structure of thin film transistor liquid crystal display and its producing method |
| CN101192614A (en) * | 2006-11-22 | 2008-06-04 | 群康科技(深圳)有限公司 | Thin film transistor substrate and its producing method |
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