CN101738514B

CN101738514B - Method of manufacturing test carrier with repair layer metal pad

Info

Publication number: CN101738514B
Application number: CN 200810176064
Authority: CN
Inventors: 赵本善
Original assignee: King Yuan Electronics Co Ltd
Current assignee: King Yuan Electronics Co Ltd
Priority date: 2008-11-11
Filing date: 2008-11-11
Publication date: 2013-03-20
Anticipated expiration: 2028-11-11
Also published as: CN101738514A

Abstract

The invention relates to a method for manufacturing a test carrier plate with a metal pad of a repairing layer, which comprises the steps of firstly providing a test carrier plate which is pre-distributed with a circuit layout and is exposed with a plurality of test contacts, and then sequentially forming a seed crystal layer and a photoresist layer on the test carrier plate respectively. Then, removing part of the photoresist layer corresponding to the test contacts to form a plurality of openings, and then electroplating an electroplating layer in the plurality of openings, wherein the electroplating layer at least comprises a repairing layer doped with a plurality of nano-capsules, and each nano-capsule is internally provided with a filling agent which can be at least one of the following substances: inhibitors, and corrosion inhibitors. Finally, the photoresist layer and the seed crystal layer are removed respectively. Therefore, the invention can manufacture a test carrier plate which can greatly prolong the service life and improve the overall test yield and productivity.

Description

Method for manufacturing test carrier plate with metal mat of repairing layer

Technical field

The present invention relates to a kind of method for manufacturing test carrier plate with metal mat of repairing layer, espespecially a kind of test carrier plate that is applicable to IC packaging and testing processing procedure.

Background technology

In IC test industry, the cost of all devices cost payout middle probe and test carrier plate (Load Board) occupies sizable proportion, and main length because of its life-span has remarkable and very large impact relation again.With the industry actual state; probe and test carrier plate often because of mode mistake, the tool parameters of running set improper generation press down that the design of impulsive force, accessory is bad, damage or excessive wear that life-span of behavior adjustment management carelessness, material itself etc. factor causes probe and test carrier plate; thereby cause the ratio of shutdown too high, and then significantly affect the yield of testing, the profit that reaches operation.

Yet with existing actual state, probe and test carrier plate are regarded as general consumables.Especially test carrier plate, its single cost have a direct impact once damage immediately company to be made a profit often up to hundreds thousand of even millions of units.Wherein, test carrier plate is damaged except directly changing the new product, although also can carry out patch work, repairing technique is difficult and equally also need expends suitable cost.Especially, when the metal gasket on the test carrier plate by probe after long-time the impact, the not only very difficult repairing that becomes of external form, severe patient also can damage the circuit under the circuit board (PCB), and must scrap and change new product to repairing eventually at last.

Summary of the invention

In order to solve the problem of prior art, the purpose of this invention is to provide a kind of method for manufacturing test carrier plate with metal mat of repairing layer.

For reaching described purpose, a kind of method for manufacturing test carrier plate with metal mat of repairing layer of the present invention, may further comprise the steps: at first (A) provides a test carrier plate, and test carrier plate is laid with a circuit layout in advance.Circuit layout includes a plurality of test contacts, and it is revealed on the upper surface of test carrier plate.(B) form a kind of crystal layer in the upper surface of test carrier plate and cover a plurality of test contacts of circuit layout.Then, (C) form a photoresist layer on kind of crystal layer.Again, (D) remove a photoresist layer part to form a plurality of openings, wherein, a plurality of openings correspond respectively to a plurality of test contacts of test carrier plate to manifest a plurality of test contacts.

Then, (E) electroplate an electrodeposited coating in a plurality of openings, electrodeposited coating comprises a repair layer at least, and repair layer is doped with a plurality of nanometer storage capsules, and each nanometer storage capsule in the inner section has been installed with a filler, and filler can be following at least one: inhibitor, anticatalyst, and corrosion inhibitor.At last, (F) remove photoresist layer, and (G) remove kind of a crystal layer.

Wherein, the utricule of a plurality of nanometer storage capsules of the present invention can be following at least one: mix oxide, beta-schardinger dextrin-anticatalyst compound, empty fine polypropylene, electrically conductive polyaniline, the two property block copolymers of close and distant water, polyethylene oxide, PNIPAM, reach polycaprolactone polyol.The material characteristic of nanometer storage capsule mainly can be broken or alternate manner can make it to break and can cause accommodating filler in the inner and disengage through the external force extruding, and then produces and repair effect.

Again and, step of the present invention (E) can may further comprise the steps: (E1) electroplate a first metal layer in a plurality of openings.(E2) electroplates a repair layer in a plurality of openings and is covered on the first metal layer again, and repair layer is doped with a plurality of nanometers storage capsules.Then, (E3) electroplate one second metal level in a plurality of openings and be covered on this repair layer.Accordingly, be formed with the metal gasket that possesses one deck repair layer.Certainly, also can repeat to implement according to this step and form the metal gasket of tool multilayer repair layer.

Moreover the first metal layer of step of the present invention (E1) can be nickel, copper, chromium, titanium or other equivalent metal material.Yet the repair layer of step of the present invention (E2) can be nickel, copper, chromium, titanium or other equivalent metal material, and is doped with a plurality of nanometer storage capsules.In addition, the second metal level of step of the present invention (E3) can be nickel, copper, chromium, titanium or other equivalent metal material equally.

In addition, the formation method of kind crystal layer can be following at least one in the step of the present invention (B): equivalent processing procedure or technology that sputter, evaporation, plating, electroless-plating (Electroless Plating) or other physical deposition or chemical Shen are long-pending.In addition, the method for formation photoresist layer can be following at least one in the step of the present invention (C): printing, roller coating, spray coating, curtain type are coated with, reach rotary coating or other equivalent processing procedure or technology.Again, the method that forms a plurality of openings in the step of the present invention (D) can be utilized the exposure imaging mode.

Beneficial effect of the present invention: the present invention can make a kind ofly can significantly improve serviceable life, can improve integrated testability yield, and the test carrier plate of production capacity again.In addition, nanometer of the present invention storage capsule can be inserted such as antioxidant, inhibitor, anticatalyst, and corrosion inhibitor or even increase the material of the characteristics such as conduction, abrasion resisting, and its keyholed back plate to cost, plant efficiency or the output value have great lifting.

Description of drawings

Figure 1A to 1G is the diagrammatic cross-section of the test carrier plate of first embodiment of the invention.

Fig. 2 is the process flow diagram of first embodiment of the invention.

Fig. 3 is the process flow diagram of the step (E) of first embodiment of the invention.

Fig. 4 is the diagrammatic cross-section of the test carrier plate of second embodiment of the invention.

Fig. 5 is the process flow diagram of the step (E) of second embodiment of the invention.

[main element symbol description]

1 test carrier plate, 10 circuit layouts, 101 test contacts

2 kinds of crystal layer 3 photoresist layers of 11 upper surfaces

32 openings, 4 electrodeposited coatings, 41 repair layer

42,44 the first metal layers, 43,46 second metal levels, 45 first repair layer

47 second repair layer 48 the 3rd metal level, 51 nanometers storage capsule

A, B, C, D, E, F, G, E1, E2, E3, E4, E5, E6, step e 7, E8

Embodiment

Please consult simultaneously Figure 1A to 1G, and Fig. 2, wherein Figure 1A to 1G is the diagrammatic cross-section of the test carrier plate of method for manufacturing test carrier plate first embodiment of the present invention with metal mat of repairing layer, and Fig. 2 is the process flow diagram of first embodiment of the invention.Following examples will illustrate as an example of the test carrier plate 1 (Load Board) of semiconductor assembly and test industry example, but the present invention and not only be confined to this, on its parts that impact for a long time, rubs applicable to any needs or repeatedly contact.

Shown in Figure 1A, at first provide a test carrier plate 1 (Load Board), and test carrier plate 1 is laid with a circuit layout 10 (Circuit Layout) in advance, such as the steps A of Fig. 2.Wherein, circuit layout 10 includes a plurality of test contacts 101, and it is revealed on the upper surface 11 of test carrier plate 1, shown in Figure 1A.

As shown in Figure 1B, form a kind of crystal layer 2 in the upper surface 11 of test carrier plate 1 and cover a plurality of test contacts 101 of circuit layout 10, such as the step B of Fig. 2.Present embodiment is to form kind of a crystal layer 2 with plating mode, certainly also can adopt the physical deposition such as sputter, evaporation, electroless-plating or chemical Shen is long-pending or other equivalent processing procedure.General common kind crystal layer 2 comprises again bonding coat (Adhesion Layer), wettable layer (Wetting Layer), protective seam (Protection Layer).Wherein, bonding coat is mainly in order to stick together titanium (Ti), chromium (Cr) or titanium/tungsten (Ti/W) alloy commonly used etc.Wettable layer possesses the glomerate characteristic of easy shape, nickel (Ni) commonly used, copper (Cu), palladium (Pd) or molybdenum (Mo).Protective seam is then mainly in order to avoid oxidation, common use gold (Au).

Shown in Fig. 1 C, form a photoresist layer 3 on kind of crystal layer 2, such as the step C of Fig. 2.The method of its formation is to adopt rotary coating (Spin coating) mode, certainly also can utilize printing (Printing), roller coating (Roller coating), spray coating (Spray coating), curtain type coating modes such as (Curtain coating).The thickness of photoresist layer 3 is about 30 microns (μ m) in the present embodiment, certainly can change according to actual demand.

Shown in Fig. 1 D, then utilize the mode of exposure and development to remove photoresist layer 3 parts to form a plurality of openings 32, such as the step D of Fig. 2.Wherein, a plurality of openings 32 correspond respectively to a plurality of test contacts 101 of test carrier plate 1 to manifest a plurality of test contacts 101.

Please consult simultaneously Fig. 1 E-1,1E-2,1E-3, reach Fig. 3, wherein Fig. 3 is the process flow diagram of the step (E) of first embodiment of the invention.Come, step (E) is sequentially electroplated respectively a first metal layer 42 (step e 1 of Fig. 3), a repair layer 41 (step e 2 of Fig. 3), is reached the second metal level 43 (step e 3 of Fig. 3) in a plurality of openings 32, flow process as shown in Figure 3 again.In the present embodiment, the first metal layer 42, and the second metal level 43 be all nickel, and repair layer 41 is also for nickel but be doped with a plurality of nanometers storage capsules 51.The thickness of repair layer 41 is about 1～3 micron (μ m) in the present embodiment, certainly can change according to actual demand.

Be to use two groups of electroplating baths about above-mentioned plating step in the present embodiment, one group of electroplating bath is general nickel plating solution, and it is mainly by amido nickel sulphonic acid (Ni (NH ₂SO ₃) ₂.4H ₂O), salinization nickel (NiCl ₂.6H ₂O), boric acid (H ₃BO ₃), and moistening smoothing agent (Level-Wetter) form.This electroplating bath is in order to deposit the first metal layer 42, to reach the second metal level 43.And an other electroplating bath is the plating bath that mixes that nickel and nanometer are store capsule 51, in order to deposit repair layer 41.That is present embodiment adopts composite plating mode (Composite Plating).

Accordingly, present embodiment carries out alternatively plate between above-mentioned two groups of electroplating baths, and wherein process is aided with the stirring of airflow stirring or magnetite again, allows nanometer store uniformly coating of capsule 51.Present embodiment adopts composite plating mode major advantage except processing procedure is simple, with low cost, main easier control repair layer 41, and metal level 42,43 the number of plies and thickness, its only need control alternatively plate between two groups of electroplating baths number of times, and time of electroplating deposition get final product.Again and, nickel and compound nickel in the present embodiment are because its agent structure all is nickel, so even use the composite plating mode of two kinds of plating, can't have influence on whole agent structure.

Yet, the material of the utricule of the nanometer storage capsule 51 of present embodiment can be selected the material for the environmental factor sensitivity, the external force extruding is broken, high-temperature heating is broken or alternate manner can make it to break as being subjected to, and then accommodating filler is in the inner disengaged, and then produces the repairing effect.Be applied to biotechnology or give birth to the following material of curing Material Field as common: mixed oxide (Mixed-oxide nanoparticles), beta-schardinger dextrin-anticatalyst compound (β-cyclodextrin-inhibitor complexes), empty fine polypropylene (Hollow fiber polyprolylene), electrically conductive polyaniline (Conducting polyaniline), the two property block copolymers (Amphiphilic block copolymers) of close and distant water, polyethylene oxide (Ethylene oxide), PNIPAM (N-isopropyl acrylamide), and polycaprolactone polyol (Polycaprolactone) etc.

Moreover, the material of nanometer storage capsule 51 inner filling agent can be selected inhibitor (Inhibitor), anticatalyst, reach corrosion inhibitor (Anti-Corrosion Agent) etc., right its main effect is to repair, reduce and continue abrasion, anticorrosive or anti-oxidant etc., so take liquid solvent as good.Right its material can adopt following material, such as metal oxide, the potassium ferricyanide (Potassium ferricyanide), transition metal oxide (transition metal), make film (Film formers), dust Inhibitor (Dust suppression compounds) or other equivalent material all applicable to the present invention.As for, the average particle size range of nanometer storage capsule 51 can be 300 to 400 nanometers (nm), and it can effectively reduce because of contact, rub and cause the variation of surface roughness, and then avoids the overall operation of the equipment that affects.

Shown in Fig. 1 F, 1G, sequentially remove at last photoresist layer 3, and kind of a crystal layer 2, such as the step F of Fig. 2, and step G.So final product shown in Fig. 1 G, comprising be laid with circuit layout 10 and appear test contacts 101 test carrier plate 1, plant crystal layer 2, the first metal layer 42, repair layer 41, and the second metal level 43.

Please consult simultaneously Fig. 4, reach Fig. 5, Fig. 4 is the diagrammatic cross-section of the test carrier plate of second embodiment of the invention, and Fig. 5 is the process flow diagram of the step (E) of second embodiment of the invention.The second embodiment of the present invention and the first embodiment Main Differences are that wherein the second embodiment possesses two layers of repair layer 45,47.More significantly improve serviceable life again than previous embodiment by setting up two layers of repair layer 45,47 separately.Therefore, the present invention only is confined to simple layer repair layer 41, can be expanded according to the enforcement demand.

Accordingly, the difference of the second embodiment and the first embodiment is step (E).The step of the second embodiment (E) is sequentially to electroplate the first repair layer 45 (step e 5 of Fig. 5), one second metal level 46 (step e 6 of Fig. 5), that a first metal layer 44 (step e 4 of Fig. 5), is doped with a plurality of nanometers storage capsules (indicating among the figure) to be doped with second repair layer 47 (step e 7 of Fig. 5) of a plurality of nanometers storage capsules and to electroplate one the 3rd metal level 48 (step e 8 of Fig. 5) in a plurality of openings.Right this second embodiment can adopt the composite plating mode equally, with two groups of electroplating bath alternatively plates, can reach.

Above-described embodiment only is to give an example for convenience of description, and the interest field that the present invention advocates should be as the criterion so that the claim scope is described certainly, but not only limits to above-described embodiment.

Claims

1. a method for manufacturing a test carrier with a repair layer metal pad, is characterized in that, comprises the following steps:

(A) providing a test carrier board, the test carrier board is pre-laid with a circuit layout, and the circuit layout includes a plurality of test contacts which are exposed on the upper surface of the test carrier board;

(B) forming a crystal layer on the upper surface of the test carrier board and covering the plurality of test contacts of the circuit layout;

(C) forming a photoresist layer on the seed layer;

(D) removing a part of the photoresist layer to form a plurality of openings, wherein the plurality of openings respectively correspond to the plurality of test contacts of the test carrier to expose the plurality of test contacts;

(E) Electroplating an electroplating layer in the plurality of openings, the electroplating layer includes at least one repair layer, the repair layer is doped with a plurality of nano-storage capsules, each nano-storage capsule is provided with a filling agent in its inner content, the The fillers in the multiple nano storage capsules are inhibitors, inhibitors, anti-corrosion agents or combinations thereof;

(F) removing the photoresist layer; and

(G) Removing the seed layer.

2. as claimed in claim 1, there is the test carrier manufacturing method of repair layer metal pad, it is characterized in that, the capsule body of this plurality of nano storage capsules in this step (E) is mixed oxide, β-cyclopaste respectively Fine inhibitor compound, hollow fiber polypropylene, conductive polyaniline, hydrophilic-hydrophobic amphipathic block copolymer, polyethylene oxide, polyisopropylacrylamide, polycaprolactone polyol or a combination thereof.

3. the method for manufacturing the test carrier with the repair layer metal pad as claimed in claim 1, is characterized in that, this step (E) comprises the following steps:

(E1) electroplating a first metal layer in the plurality of openings;

(E2) electroplating a repair layer in the plurality of openings and covering the first metal layer, the repair layer doped with a plurality of nano-storage capsules; and

(E3) Electroplating a second metal layer in the plurality of openings and covering on the repair layer.

4. The method for manufacturing a test carrier with a repaired metal pad as claimed in claim 3, wherein the first metal layer in the step (E1) is a nickel-plated layer.

5 . The method for manufacturing a test carrier with a repaired metal pad as claimed in claim 3 , wherein the repaired layer in the step ( E2 ) is a nickel-plated layer doped with the plurality of nano-reservoirs. 6 .

6 . The method for manufacturing a test carrier with a repaired metal pad as claimed in claim 3 , wherein the second metal layer in the step ( E3 ) is a nickel-plated layer. 7 .

7. as claimed in claim 1, there is the test carrier manufacturing method of repair layer metal pad, it is characterized in that, the formation method of this seed crystal layer in this step (B) is sputtering, vapor deposition, electroplating, electroless plating or a combination thereof.

8. as claimed in claim 1, there is the test carrier manufacturing method of repair layer metal pad, it is characterized in that, the method for forming this photoresist layer in this step (c) is printing, roller coating, spray coating, curtain formula coating, spin coating or a combination thereof.

9 . The method for manufacturing a test carrier with a repaired metal pad as claimed in claim 1 , wherein the method of forming the plurality of openings in the step (D) is by exposure and development. 10 .