CN101734710A - Method for preparing zinc stannate semiconductor functional material - Google Patents
Method for preparing zinc stannate semiconductor functional material Download PDFInfo
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- CN101734710A CN101734710A CN200910199904A CN200910199904A CN101734710A CN 101734710 A CN101734710 A CN 101734710A CN 200910199904 A CN200910199904 A CN 200910199904A CN 200910199904 A CN200910199904 A CN 200910199904A CN 101734710 A CN101734710 A CN 101734710A
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- sno
- functional material
- semiconductor functional
- zinc stannate
- grinding
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- 239000000463 material Substances 0.000 title claims abstract description 12
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title claims abstract description 9
- 238000000227 grinding Methods 0.000 claims abstract description 10
- 239000000203 mixture Substances 0.000 claims abstract description 9
- 238000002360 preparation method Methods 0.000 claims abstract description 8
- 239000004570 mortar (masonry) Substances 0.000 claims abstract description 6
- 239000008367 deionised water Substances 0.000 claims abstract description 5
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 5
- 238000002156 mixing Methods 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 238000003801 milling Methods 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 239000011701 zinc Substances 0.000 abstract description 18
- 239000002245 particle Substances 0.000 abstract description 5
- 229910006404 SnO 2 Inorganic materials 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 239000000126 substance Substances 0.000 description 3
- 238000005303 weighing Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 238000001027 hydrothermal synthesis Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000010532 solid phase synthesis reaction Methods 0.000 description 2
- 238000003836 solid-state method Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000003837 high-temperature calcination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
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Abstract
本发明公开了一种锡酸锌半导体功能材料的制备方法，该方法是：取ZnO，SnO2按摩尔比为2∶1的比例混合，在混合均匀后放入螺杆式研磨机中研磨，或者在混合物中加入能将其浸没的去离子水，在研钵中研磨，混合均匀后，放入烘箱中在80℃下烘至微干，然后再放入螺杆式研磨机中研磨；通过控制变频器的频率，研磨得Zn2SnO4。本发明具有工艺简单，易操作，制备时间短，物相纯，分散性好，颗粒均匀等优点。The invention discloses a method for preparing a zinc stannate semiconductor functional material. The method is as follows: mix ZnO and SnO 2 in a molar ratio of 2:1, put them into a screw grinder for grinding after mixing evenly, or Add deionized water that can submerge it into the mixture, grind it in a mortar, mix it evenly, put it in an oven and dry it at 80°C until it is slightly dry, and then put it into a screw grinder for grinding; by controlling the frequency conversion The frequency of the device is ground to Zn 2 SnO 4 . The invention has the advantages of simple process, easy operation, short preparation time, pure phase, good dispersibility, uniform particles and the like.
Description
Technical field
The present invention relates to the inorganic materials preparing technical field, specifically a kind of preparation method of zinc stannate semiconductor functional material.
Background technology
Zn
2SnO
4Be complex chemical compound, have photo-electrochemical effect, but also have the not available property of some single oxides with spinel structure.Zn
2SnO
4(ZTO) as a kind of important semiconductor functional material the high electron mobility jail is arranged, high conductivity, good absorption property has important purposes, at aspects such as gas sensor, electrode materials, optoelectronic equipments wide application prospect is arranged.
Zn
2SnO
4Traditional high temperature solid-state method is adopted in the preparation of material mostly, needs earlier raw material to be carried out ball milling, and high-temperature calcination again, higher to temperature requirement, energy expenditure is big, introduces impurity easily, and particle aggregation is serious, and particle is inhomogeneous, and reaction is difficult to control.In recent years, hydrothermal method and low-temperature solid-phase method are synthetic has obtained further developing.Though the hydrothermal method temperature of reaction is low, experiment condition is easy to control, and the reaction times is longer, and operating process is loaded down with trivial details, and facility investment is big, the product bad dispersibility.Though low-temperature solid-phase method equipment is simple, it is temperature required low to compare high temperature solid-state method, needs the synthetic of precursor, and expense of raw materials is more expensive, and the product particle diameter is bigger.
Summary of the invention
The objective of the invention is to utilize the screw ball mill to prepare a kind of zinc stannate semiconductor functional material, its preparation method is simple, efficient, and energy consumption is low, and is with low cost.
The concrete technical scheme that realizes the object of the invention is:
A kind of preparation method of zinc stannate semiconductor functional material is characterized in that this method is: get zinc oxide (ZnO), stannic oxide (SnO
2) be 2: 1 mixed in molar ratio, thorough mixing evenly after, directly put into the screw grinding machine for grinding;
Perhaps:
Add in mixture and its buried deionized water can be ground in mortar, after mixing, baking is extremely little dried down at 80 ℃ to put into baking oven, puts into the screw grinding machine for grinding again;
In the process of lapping, shredder frequency converter frequency parameter is 40～50Hz, milling time 2～4h; Obtain zinc stannate semiconductor functional material, its general expression is: Zn
2SnO
4
Described screw shredder is a Chinese invention patent 200710170826.2.
The zinc stannate semiconductor functional material that the present invention prepares, thing is compared pure, and crystalline form is better, good dispersity, uniform particles, the preparation method is simple, can large-scale commercial production.
Description of drawings
Fig. 1 is the embodiment of the invention 1 gained Zn
2SnO
4XRD figure
Fig. 2 is the embodiment of the invention 2 gained Zn
2SnO
4XRD figure
Fig. 3 is the embodiment of the invention 3 gained Zn
2SnO
4XRD figure
Fig. 4 is the embodiment of the invention 3 gained Zn
2SnO
4SEM figure
Embodiment 1
A, take by weighing ZnO 42.3284g; SnO
239.1846g.
B, with above-mentioned substance, ground and mixed is even in mortar.
C, put into the screw shredder then, it is 40HZ that the frequency converter frequency parameter is set, ground 4 hours Zn
2SnO
4
Present embodiment gained target product Zn
2SnO
4XRD figure see accompanying drawing 1; Present embodiment gained Zn
2SnO
4Thing compare pure.
A, take by weighing ZnO 42.3284g; SnO
239.1846g.
B, with above-mentioned substance, add the 20ml deionized water as solvent (its add-on is advisable mixture can be uniformly dispersed), ground and mixed is even in mortar.
C, mixture is put into baking oven 80 ℃ of down bakings 2 hours.
D, put into the screw shredder then, it is 45HZ that the frequency converter frequency parameter is set, ground 3 hours Zn
2SnO
4
Present embodiment gained Zn
2SnO
4XRD figure see accompanying drawing 2; Present embodiment gained Zn
2SnO
4Time shorten, thing is compared pure, dephasign is less.
Embodiment 3
A, take by weighing ZnO 42.3284g; SnO
239.1846g.
B, with above-mentioned substance, add the 20ml deionized water as solvent (its add-on is advisable mixture can be uniformly dispersed), ground and mixed is even in mortar.
C, mixture is put into baking oven 80 ℃ of down bakings 2 hours.
D, put into the screw shredder then, it is 50HZ that the frequency converter frequency parameter is set, ground 2 hours Zn
2SnO
4
Present embodiment gained Zn
2SnO
4XRD and SEM see accompanying drawing 3-4; Present embodiment gained Zn
2SnO
4Time shorter, thing is compared pure, dephasign seldom.
Claims (1)
1. the preparation method of a zinc stannate semiconductor functional material is characterized in that this method is: get zinc oxide (ZnO), stannic oxide (SnO
2) be 2: 1 mixed in molar ratio, thorough mixing evenly after, directly put into the screw grinding machine for grinding;
Perhaps:
Add in mixture and its buried deionized water can be ground in mortar, after mixing, baking is extremely little dried down at 80 ℃ to put into baking oven, puts into the screw grinding machine for grinding again;
In the process of lapping, shredder frequency converter frequency parameter is 40～50Hz, milling time 2～4h; Obtain zinc stannate semiconductor functional material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910199904A CN101734710A (en) | 2009-12-04 | 2009-12-04 | Method for preparing zinc stannate semiconductor functional material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910199904A CN101734710A (en) | 2009-12-04 | 2009-12-04 | Method for preparing zinc stannate semiconductor functional material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101734710A true CN101734710A (en) | 2010-06-16 |
Family
ID=42458824
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910199904A Pending CN101734710A (en) | 2009-12-04 | 2009-12-04 | Method for preparing zinc stannate semiconductor functional material |
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| Country | Link |
|---|---|
| CN (1) | CN101734710A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101943692A (en) * | 2010-08-11 | 2011-01-12 | 上海师范大学 | Air-sensitive material with high-sensitivity and quick-response, and preparation method and application thereof |
| CN102637530A (en) * | 2012-01-11 | 2012-08-15 | 南京大学昆山创新研究院 | Method for preparing nano-structured Zn2SnO4 on stainless steel wires |
| CN102643087A (en) * | 2012-04-28 | 2012-08-22 | 河南科技大学 | SnO2-Zn2SnO4 composite voltage-sensitive ceramics and preparation method thereof |
| CN103980895A (en) * | 2014-03-31 | 2014-08-13 | 华南理工大学 | Trivalent chromium ions-doped zinc stannate near-infrared long-persistence luminescent material and preparation method thereof |
| CN104961152A (en) * | 2015-07-07 | 2015-10-07 | 昆明理工大学 | Method for preparing zinc stannate under vacuum condition |
| CN105293569A (en) * | 2015-12-04 | 2016-02-03 | 西安科技大学 | Method for preparing zinc stannate micrometer crystals with regular octahedron morphology |
| CN110865099A (en) * | 2019-12-02 | 2020-03-06 | 陕西师范大学 | ZnO-SnO2-Zn2SnO4Preparation method and application of porous nanofiber gas-sensitive material |
-
2009
- 2009-12-04 CN CN200910199904A patent/CN101734710A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101943692A (en) * | 2010-08-11 | 2011-01-12 | 上海师范大学 | Air-sensitive material with high-sensitivity and quick-response, and preparation method and application thereof |
| CN101943692B (en) * | 2010-08-11 | 2014-02-26 | 上海师范大学 | Preparation method and application of a high-sensitivity and fast-response gas-sensitive material |
| CN102637530A (en) * | 2012-01-11 | 2012-08-15 | 南京大学昆山创新研究院 | Method for preparing nano-structured Zn2SnO4 on stainless steel wires |
| CN102637530B (en) * | 2012-01-11 | 2014-09-17 | 南京大学昆山创新研究院 | Method for preparing nano-structured Zn2SnO4 on stainless steel wires |
| CN102643087A (en) * | 2012-04-28 | 2012-08-22 | 河南科技大学 | SnO2-Zn2SnO4 composite voltage-sensitive ceramics and preparation method thereof |
| CN102643087B (en) * | 2012-04-28 | 2013-08-14 | 河南科技大学 | A kind of preparation method of SnO2-Zn2SnO4 composite varistor ceramics |
| CN103980895A (en) * | 2014-03-31 | 2014-08-13 | 华南理工大学 | Trivalent chromium ions-doped zinc stannate near-infrared long-persistence luminescent material and preparation method thereof |
| CN103980895B (en) * | 2014-03-31 | 2015-10-28 | 华南理工大学 | Zinc near infrared long after glow luminous material of a kind of trivalent chromic ion doping and preparation method thereof |
| CN104961152A (en) * | 2015-07-07 | 2015-10-07 | 昆明理工大学 | Method for preparing zinc stannate under vacuum condition |
| CN105293569A (en) * | 2015-12-04 | 2016-02-03 | 西安科技大学 | Method for preparing zinc stannate micrometer crystals with regular octahedron morphology |
| CN110865099A (en) * | 2019-12-02 | 2020-03-06 | 陕西师范大学 | ZnO-SnO2-Zn2SnO4Preparation method and application of porous nanofiber gas-sensitive material |
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Application publication date: 20100616 |