CN101728440A - Solar converter and compound converter - Google Patents
Solar converter and compound converter Download PDFInfo
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- CN101728440A CN101728440A CN200810167343A CN200810167343A CN101728440A CN 101728440 A CN101728440 A CN 101728440A CN 200810167343 A CN200810167343 A CN 200810167343A CN 200810167343 A CN200810167343 A CN 200810167343A CN 101728440 A CN101728440 A CN 101728440A
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 claims abstract description 31
- 238000006243 chemical reaction Methods 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 39
- 239000004065 semiconductor Substances 0.000 claims description 35
- 230000008569 process Effects 0.000 claims description 25
- 238000001816 cooling Methods 0.000 claims description 12
- 230000003595 spectral effect Effects 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 3
- 238000005457 optimization Methods 0.000 claims description 3
- 230000003044 adaptive effect Effects 0.000 claims description 2
- 230000002452 interceptive effect Effects 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract description 40
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 36
- 229910052710 silicon Inorganic materials 0.000 abstract description 29
- 239000010703 silicon Substances 0.000 abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 27
- 229910052732 germanium Inorganic materials 0.000 abstract description 25
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract description 23
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract description 22
- 229910052733 gallium Inorganic materials 0.000 abstract description 22
- 229910052738 indium Inorganic materials 0.000 abstract description 21
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 21
- 238000001228 spectrum Methods 0.000 abstract description 20
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 19
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 19
- 239000011574 phosphorus Substances 0.000 abstract description 19
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 abstract description 18
- 229910005540 GaP Inorganic materials 0.000 abstract description 14
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 abstract description 4
- 229910003460 diamond Inorganic materials 0.000 abstract description 4
- 239000010432 diamond Substances 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 description 41
- 229910052751 metal Inorganic materials 0.000 description 28
- 239000002184 metal Substances 0.000 description 28
- 239000000463 material Substances 0.000 description 25
- 230000005622 photoelectricity Effects 0.000 description 18
- 230000005496 eutectics Effects 0.000 description 16
- 239000011521 glass Substances 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000004033 plastic Substances 0.000 description 11
- 229920003023 plastic Polymers 0.000 description 11
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- 238000001556 precipitation Methods 0.000 description 9
- 230000008901 benefit Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000000227 grinding Methods 0.000 description 8
- 238000005498 polishing Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000002329 infrared spectrum Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000011010 flushing procedure Methods 0.000 description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000583 Nd alloy Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 210000002421 cell wall Anatomy 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 241000707825 Argyrosomus regius Species 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 150000002290 germanium Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035479 physiological effects, processes and functions Effects 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000008521 reorganization Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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Abstract
The invention relates to a multi-node multi-spectrum solar converter and a production method for converting solar energy into electric energy by using same. The solar converter is processed by diamond, aluminum arsenide, silicon, gallium phosphide, indium gallium phosphorus, gallium arsenide, germanium, silicon, indium gallium arsenic, indium carbide or any substrate sensitive to one or a plurality of solar spectrum zones and comprises one to thousands of parallel nodes illuminated by solar light. As an optimal embodiment, in order to obtain high converting efficiency, adjacent nodes are electrically connected by conductive layers for reducing serial resistance in the converter; a plurality of converters with different substrates of different band gaps are assembled into a compound converter. The compound converter has a multi-spectrum multi-node converting function and is used for converting the solar energy of the whole spectrum from ultraviolet ray to infrared ray.
Description
Technical field
The present invention relates to a kind of in order to being the connecing of electric energy, multispectral conversion equipment and manufacture method to conversion of solar energy more, especially a kind of by the entire ultraviolet line to comprising that the infrared spectrum that surpasses 95% variable energy is converted into the gathering light beams with a series of thousands of connected nodes the equipment and the method for electric energy.
Background technology
Multinode, multispectral solar converter are by three kinds of different semi-conducting material GaAs (GaAs), germanium (Ge), phosphorus gallium indium (InGaP) and form, it is at (the EMCORE of EMCORE company, www.emcore.com, 2006) and under some other researchers' the effort further developed, report sound such as nearest R. Mike Ke Naier are called " photoelectric technology of U.S. a new generation "; Captured 38% conversion efficiency difficulty in the 19 European photoelectrical solar exhibition of the first generation that France holds in June, 2004; And the conversion efficiency with regard to following 50% has been reached purpose; The transducer of these three kinds of materials has by a conduction crystallizing layer realizes three continuous serial nodes; It can be being solar energy by visible rays (the GaAs band gap by 1.4 electronvolt is determined) to the phototransformation of infrared ray (the germanium band gap by 0.65 electronvolt is determined) from ultraviolet ray (the phosphorus gallium indium band gap by 1.9 electronvolt is determined); When the solar energy light beam was incident upon on this kind structure, it penetrated into phosphorus gallium indium (InGaP) first top node and realizes the conversion of most of photon of 1.9 electronvolt; Be horizontally through the node of GaAs (GaAs) then and realize the conversion of most of photon of 1.4 electronvolt, finally arrive the node place of 0.65 electronvolt and most of photon of 0.65 electronvolt is converted into electronics and hole.In general, node degree of crystallinity is pure more, and the process of node reorganization is just few more, will be by these electronics and hole electric current many more to generation; Perhaps, also can increase electric current by the series resistance that reduces the node place; In a word, this node useful or conversion efficiency mainly is to be determined by the degree of crystallinity and the series resistance of node.
This widely spectral region and between the dot matrix of the highly purified crystal of node, be close to perfect coupling be select GaAs (GaAs), germanium (Ge), phosphorus gallium indium (InGaP) conversion solar can main cause, the successful development of the system of these three kinds of materials makes people remove to seek other multi-material system that may further reduce production costs; In fact, in the conversion of solar energy field, seek high transformation efficiency and low production cost and be described as " holy and pure Holy grail " always; In the demand process to this target, innovation can be found everywhere; The special physiology of tool Lay is used (Appl.Phys.Lett.
80, 3967, (2002)) report: people's latest developments such as J. Wu the In1-xGaxN system; " X " in this In1-xGaxN system obtaining a series of lasting upgradings and containing in the band gap developmental process of entire ultraviolet-infrared solar spectrum and can change; Though it has above-mentioned feasibility,, because its molecular beam epitaxial (molecular beam epitaxial) is too expensive in generative process, thereby its manufacturing process is infeasible, and its node crystal imperfection far away is difficult to become feasible effective conversion device in the near future.
Through development and improvement these years, the node crystal does not significantly reduce the production cost of transducer, and production has determined them still to need high production cost in order to the expensive expense of the crystalline solid of the sheet of traditional transducer; Another extreme example, characteristics are very attractive (referring to Mr.'s Green " third generation photoelectric technology " cheaply to use film and organic thin plate on transducer, in full, the simple Foryst in Berlin (2003), nature, 428,911 (2004)), (see M.Green, " Third GenerationPhotovoltaics " Springer, Berlin (2003); And S.R.Forrest, Nature, 428,911 (2004)); Aspect reduction unit source conversion cost, it is difficult to because efficient is low carry out; One of them method that reduces unit cost then is to assemble sun light beam, so that hundreds of sun light beam is incident upon in the little solar converter zone, under prerequisite with high as far as possible degree of crystallinity, when the conversion unit energy because to have only the only a few transducer area be effective, therefore, the mode of use plastics Fresnel lens or speculum gathering sun light beam even also lower than adopting film or organic thin plate cost.
Traditional transducer seldom uses the mode of assembling light beam, because they are not optimized the incidence angle of thickness, type, configuration, material, interstitial content, cooling mechanism or the solar energy light velocity of node, illustrates, and U.S. Patent number is respectively 7071407; 5405453; 7126052; 7122734 and 6252287 Patent publish the node details of some micron order thickness in three kinds of materials, it is transformed into node for the sun light beam with the dispersion of normal angled incident.Can absorb the gathering light beam energy as a relative thicker node layer, say also infeasible from the cost effective angle but make thicker relatively node layer by traditional handicraft from more than 100 sun light beams.
U.S. Patent number is respectively 4335503; 4295002; 4131984 with 3969746 Patent publish absorb the V-type groove technology of the gathering light beam of parallel incident for a plurality of nodes; When needs were assembled surpassing 500 sun light beams, disclosed transducer can be for the node that utilizes very little.
U.S. Patent number has been respectively 5246506 and 4271328 Patent publish and has had the crystal of polygonal shape and non-crystal a plurality of nodes of no solid shape, but for reaching the purpose of judging a gathering light beam exceedance sun light beam, its conversion efficiency is too slow.
U.S. Patent number is respectively 6372980; 6340788 and 6174296 patent has disclosed the series connection node in the highly purified crystal structure respectively, but it lacks for utilize assembling distributing rationally of multinode that light beam reduces cost and multispectral band.
The U.S. Patent number V-shaped groove solar cell that has been 4,376,872 Patent publish, it comprises a series of continuous a plurality of nodes, but these nodes are not optimized to infrared spectrum for multispectral band covers ultraviolet ray.
Multinode of the prior art, the sunlight of multispectral transducer in order to assemble, because of thickness optimization, number of nodes, node configuration, sun light beam incident angle and lower production cost at node have restriction as described below:
1. spectral region has restriction to the phosphorus gallium indium band gap of 1.9 electronvolt and the germanium band gap of 0.65 electronvolt.
2. the thickness of multinode has restriction to the photon that absorbs all intrafascicular not enough microns of gathered light.
3. these three kinds of material transducers (GaAs, germanium, phosphorus gallium indium) transducer has restriction to these three kinds of materials.
4. this multinode transducer has restriction to three nodes.
5. this multinode transducer has restriction to the limited conversion efficiency that crystal provides.
6. this node configuration has restriction to the planar configuration that has node.
7. this sun light beam incident angle has restriction to the normal plane incident angle.
8. this sun light beam has restriction to the gathering that is less than 500 sun light beams.
9. the manufacturing process of this manufacturing transducer has restriction to producing in enormous quantities, cheaply; But except the film or organic solar transducer of the poor efficiency that production is large stretch of.
Summary of the invention
Therefore,, an object of the present invention is for overcoming existing defective in the above-mentioned prior art, provide a kind of multinode, multispectral transducer with the covers entire ultraviolet line to the infrared ray solar spectrum.
Another object of the present invention is to provide a kind of and have the multinode of optimum node thickness, multispectral transducer to absorb whole gathering sun light beam.
A further object of the present invention is, provides a kind of and has the multinode that can handle multiple different materials function according to demand, multispectral transducer and cover from ultraviolet ray to ultrared whole solar spectrum realizing.
Another purpose of the present invention is to provide a kind of and have the multinode that a plurality of nodal functions can be set according to demand, multispectral transducer to realize conversion efficiency efficiently.
A further object of the present invention is to provide a kind of and have the multinode that high node degree of crystallinity function can be set according to demand, multispectral transducer to realize conversion efficiency efficiently.
Another object of the present invention is, a kind of the have multinode of vertical node configuration, multispectral transducer are provided, and relies on these all nodes of vertical node configuration projection to take place to realize conversion efficiency efficiently by sun light beam simultaneously and equivalent amount.
A further object of the present invention is to provide a kind of sun parallel beam to incide the multinode of all nodes, multispectral transducer to realize conversion efficiency efficiently.
Another purpose of the present invention is to provide a kind of multinode of gathering sun light beam as much as possible, multispectral transducer of receiving according to demand to reach conversion efficiency and cheap unit source conversion cost efficiently.
A further object of the present invention is to provide a kind of can the realization to produce, have the multinode of effective conversion efficiency function, multispectral transducer in batches with low cost.
The present invention includes some technical characterictics, each technical characterictic can combine with additional technical feature as required, these additional technical features are included in the technical characterictic that discloses and/or do not disclose herein, and the optional embodiment of this paper has disclosed the effect that these technical characterictics combine with additional technical feature in detail.
According to purpose of the present invention, the invention provides a kind of multinode, multispectral it comprises one or more nodes in order to solar spectrum is converted to the transducer of electric energy, and each node can be a kind of particular type of at least one band-gap energy.
Just as a microchip, it is processed on the crystal wafer of high conversion efficiency, high-crystallinity to comprise that a node is to thousands of nodes.Each node is the micro photo electric node structure, and it comprises two parallel, meagre, highly doped (n+ ion and p+ ion) layers, is folded with the mired Doped n sheath or the p sheath of high crystallization between it.
Can obtain a plurality of transducers by processing each substrate, different substrates can be used to process the different transducer with different band-gap energies, and this different band-gap energy is corresponding with the different piece of solar spectrum.
Therefore, when several different converter bank are fitted together, they form compound converter, and this compound converter has the ability that is converted to the multispectral susceptibility of energy in the solar spectrum from ultraviolet ray (～2 electronvolt) to the part of infrared ray (～0.65 electronvolt).
The present invention emphasizes: (a) make high efficiency photoelectricity node; (b) the thousands of node of batch machining on microchip or naked crystalline substance; Assembling forms a plurality of different transducers of whole solar spectrum that cover as required and assembles the compound converter of sun light beam to form conversion.According to purpose of the present invention,, assemble and form the compound converter that has with the low multispectral sun light beam ability of unit energy cost conversion gathering having the transducer that low-cost batch machining formation has thousands of parallel nodes on the substrate of different band gap.
First technical scheme of the present invention is the solar converter that the sun light beam of incident is converted to solar energy by at least two adjacent solar cell layers, wherein each battery layers comprises at least one node, at least one layer do not need with the lattice of adjacent layer adaptive promptly with at least one other the layer link to each other.
In the different embodiment of first technical scheme, layer can comprise a kind of node type of at least one band-gap energy.In other different embodiment, layer can comprise a plurality of first type node of first band-gap energy and the node of other type of the band-gap energy that is different from the described first kind.
In other embodiments, every layer comprises at least 10 individual nodes; Also can comprise at least 100 individual nodes, also in this embodiment, described each transducer comprises at least 10 multinode layers, also can comprise at least 100 multinode layers, in saying the embodiment that relates to, the node density of every cellar area is: every square centimeter of at least 1000 nodes.
In certain embodiments, the sun light beam of the relative incident of described node is parallel to be provided with, so that each node is illuminated by the solar energy from the sun light beam of incident, described node is electrically connected.
In certain embodiments, process separately or handle to be independent of other any layer for every layer.Ground floor and at least one other layer are processed or be treated to different substrates.Described node is generated by semiconductor fabrication or is produced by organic generation.
In certain embodiments, when at least one low band gaps passed at least one layer that is positioned under it, ground floor obtained at least one band-gap energy, and each layer is stackable to absorb simultaneously from multispectral solar energy.
In various embodiments, for changing the solar energy in ultraviolet ray, visible light, infrared ray and the long infrared spectrum, node can have at least one band gap, and this band gap size is at least following numerical value: 1.8 electronvolt, 1.4 electronvolt, 1.1 electronvolt and/or 0.6 electronvolt.When processing contact on semiconductor chip, the semi-conducting material of this substrate can be diamond, aluminium arsenide, carborundum, gallium phosphide, phosphorus gallium indium, GaAs, germanium, silicon, arsenic gallium indium and indium arsenide.
In the another one embodiment of the technical program, this photoelectricity node can comprise vertical wall or inclined wall, and as a kind of form of this enforcement, wall is doped with n+ type carrier and the another one wall has p+ type carrier.Related form is: folded zone is provided with n type carrier and p+ type carrier between this wall.Other related form is: the sun light beam of first wall and/or second wall and this incident is perpendicular; Or/and the symbolic surface of first wall and second wall and node layer is perpendicular.
This transducer can comprise that vertical wall is to form parallel node, allow the electron-hole pair of same generation and same high electric field in node region, have an effect, perhaps comprise inclined wall, by simple transplanting, it can form many thickness node easily, also can be radiator hard contact is provided.
In other various embodiment, this node comprises width less than the minority carrier diffusion length, and this carrier is created in the node by incident sun light beam; Its some forms are extensible whole node width or the whole peak width of passing of this high electric field region.Its some other forms are that other node width of described first node and at least one is identical or width is different.Relative form is in each embodiment, and ground floor and at least one other layer have same thickness or different-thickness.
The specific embodiment of second technical scheme of the present invention, this compound converter comprises at least two transducers, this transducer is superimposed so that change at least two band gap simultaneously.
Some concrete forms of the embodiment of the present invention's second technical scheme are that each transducer is included as the node width that band-gap energy optimization is provided with.Different transducers can have different node width to realize maximum conversion efficiency.
Other form of the embodiment of the present invention's second technical scheme is, from being up to minimum band gap, the forefront of at least two transducers and rear alignment sequence arrangement, non-switched sun light beam is not horizontally through subsequently transducer to realize conversion with interfering in the transducer of forefront.
The various forms of the embodiment of the present invention's second technical scheme is that the transducer of each compound converter can be connected and be electrically connected with auxiliary voltage.As other form, the transducer that the transducer of each compound converter is adjacent is loosely connected, and the structure of described compound converter is unlikely distortion because of the transducer with different coefficient of thermal expansions.
The concrete form of the embodiment of the present invention's second technical scheme is, the transducer that the transducer of each compound converter is closed on it by Fabry-Perot-type cavity separately, described sun light beam therein with a specific spectral wavelength through repeatedly refraction.Among this embodiment, Fabry-Perot-type cavity comprises the chamber spacing by the thickness decision of silicon oxide layer.Among this embodiment, described silicon oxide layer thickness variable also will maximize with the sun light beam total amount that this was absorbed so that the specific solar energy that each transducer absorbed maximizes.
Other concrete form of the embodiment of the present invention's second technical scheme is, compound converter can comprise at least one and the integrated radiator of described compound converter, when a plurality of sun light beams are incident on the compound converter, rely on the temperature of this this compound converter of radiator can remain below 250 ℃; Related various forms, one or more radiators comprise passive cooling device and/or positive cooling device.
Among the another one embodiment of the present invention's second technical scheme, compound converter is integrated with in order to conversion focusing sunlight bundle and forms Fresnel Lenses bigger, with low cost, its sun light beam focuses on the transducer, when its focusing sunlight bundle, the intensity of the sun light beam of its focusing equates with multi beam sunlight beam intensity.
In all embodiments, compound converter can comprise the transducer of arbitrary quantity and type according to required spectral characteristic, and the establishment of this required spectral characteristic is to be adapted at application in the sun conversion.Be exemplified below:
When it is used on the satellite, has the ultraviolet energy that enriches in the space that the compound converter conversion of broad-band gap obtained.
When it is used on the airborne vehicle, helium or the Ne laser bundle of the compound converter conversion of GaAs (GaAs) transducer from other places only is installed.
When it was used on the remotely monitored sensor, the compound converter that the germanium transducer is installed was to change from other local neodymium alloy laser beam.
When it is used on the notebook computer, has the solar energy of the compound converter of a pair of 3 different photoelectricity nodes (InGaP, GaAs, Ge) in order to the conversion dispersion.
The present invention processes second embodiment of the method for transducer, comprising: the polishing grinding substrate to the suitable thickness of its band-gap energy thickness; Substrate is etched into brilliant unit to form transducer; On substrate, use the mode etchant hopper of standard photoetching; Transplant cell wall on substrate, to form the n+-n-p+ multinode; Above transplanting wall, precipitate metal level; Suction by vacuum is eliminated wall; By being heated to the solution temperature connecting wall to form transducer and the additional temperature radiator that connects to form compound converter.In these forms,, a Fresnel lens can be set for improving system effectiveness.
The present invention processes the 3rd embodiment of the method for transducer, the polishing grinding substrate to the suitable thickness of its band-gap energy thickness; Transplant substrate to the p+ doped layer, the thin eutectic metal level of precipitation, substrate is transferred on the another one glass support frame to expose the substrate that is positioned at other one side, transplant this second limit to the n+ doped layer, the precipitation thin metal layer, substrate is etched into brilliant unit, brilliant unit is removed from glass carrier, a plurality of different energy converters are installed formed compound converter together; The subsidiary fin of installing.In these forms,, a Fresnel lens can be set for improving system effectiveness.
The present invention processes the another one embodiment of the method for transducer, comprising: the polishing grinding substrate to the suitable thickness of its band-gap energy thickness; Substrate is etched into brilliant unit to form transducer; On substrate, use the mode etchant hopper of standard photoetching; Transplant cell wall on substrate, to form the n+-n-p+ multinode; Above transplanting wall, precipitate metal level; Substrate is transferred on the resilient support of pre-stretching, eliminates wall by the resilient support retraction that makes pre-stretching; By being heated to the solution temperature connecting wall to form transducer and the additional temperature radiator that connects to form compound converter; In these forms,, a Fresnel lens can be set for improving system effectiveness.
Also be the another one embodiment that the present invention processes the method for transducer, comprise: the polishing grinding substrate to the suitable thickness of its band-gap energy thickness; Substrate is etched into brilliant unit to form transducer, on substrate, uses the mode etching V-arrangement material trough of standard photoetching; Transplant the V-shaped groove wall on substrate, to form the n+-n-p+ multinode; Above transplanting wall, precipitate metal level; Electroplate and transplant wall has radiator with formation thermal contact; , a plurality of different energy converters installation formation together compound converters; The subsidiary fin of installing.In these forms,, a Fresnel lens can be set for improving system effectiveness.
Be still the another one embodiment that the present invention processes the method for transducer, comprise, from silicon-on-insulator (silicon-on-insulator) substrate with silicon fiml, this silicon fiml has several micron thickness approximately; Metal-organic chemical vapor deposition equipment (MOCVD) by the silicon fiml top generates SiGe (SiGe) resilient coating that is complementary with lattice; Generate the n+ based semiconductor layer of about 0.01 micron thickness at SiGe (SiGe) layer top by MOCVD; Generate the n type node region that n based semiconductor layer forms about 5 micron thickness at n+ based semiconductor layer top by MOCVD; Generate the p+ based semiconductor layer of about 0.01 micron thickness at n based semiconductor layer top by MOCVD; Repeat that all MOCVD generative processes have 20 n+-n-p+ nodes with formation and gross thickness is about 100 microns heap; Precipitation eutectic metal; Is this substrate scribing a plurality of brilliant units comprise 20 n+-n-p+ nodes with formation transducer; Substrate is forwarded on the plastic carrier with the brilliant unit near plastic carrier; Mode by etching oxidation silicon from the silicon-on-insulator substrate removes silicon chip, and brilliant unit is attached on the plastic carrier; Remove silicon fiml and silicon germanide layer from the brilliant unit of plastic carrier; Precipitation eutectic layer in brilliant unit; Remove unnecessary eutectic metal from the first periphery of crystalline substance; Remove brilliant unit from plastic carrier; 50 brilliant units being superimposed one by one formed the heap with 1000 nodes, heat this heap to about 270 ℃ of formation Eutectic Bonds (Eutectic Bond); Repeat above-mentioned steps with the different semiconductor (for example: gallium phosphide, phosphorus gallium indium, GaAs, germanium, silicon) that generates by MOCVD and form the different-energy transducer; Install different-energy transducer crystal with to form compound converter; The subsidiary fin of installing.Also a Fresnel lens can be set in the converting system in this compound converter.
In the various embodiments described above, substrate material can be, diamond, aluminium arsenide, carborundum, gallium phosphide, phosphorus gallium indium, GaAs, germanium, silicon, arsenic gallium indium and indium arsenide.
The beneficial effect of following discussion does not constitute limiting the scope of the invention, does not show that each form of the present invention all has following institute and produces effect yet.
Transducer of the present invention has overcome the defective of traditional solar converter, converter application among the present invention is extensive, it can be applicable to such as: solar power plant, rural solar energy converting community, the solar power generation of household solar energy generating, commercial and residential building, industrial plant, the vehicles and such as on the electronic equipments such as mobile phone, laptop computer.
Especially, transducer of the present invention is a small compact type equipment, it just reaches high as far as possible conversion efficiency by the material that uses a spot of high-crystallinity, wherein one of the advantage of itself is that the processing of this transducer is economical, its but just can realize production in enormous quantities by simple traditional microelectronic technique on the individual crystal substrates.
Its another advantage is, it is included in the highest internal quantum that is processed with more than 1,000 node on the crystalline substrate, and this multinode structural configuration has higher anti-series resistive in transducer, thereby obtains high conversion efficiency.
The 3rd advantage is, this transducer can adopt the identical processes of employing on arbitrary crystal substrates, the band-gap energy scope of this crystal substrates for approximately from 3.5 electronics to 0.2 electronvolt, thereby obtain and the transducer that partly can respond mutually to ultrared different solar spectrums from ultraviolet ray.This can make a plurality of different-energy transducers (is not that three materials of the same race constitute, but as three kinds of transducers that different material constitutes) assemble the compound converter that coordinates as required, this compound converter has the ability of conversion from ultraviolet ray to infrared ray overall optical spectrum energy.
The 4th advantage be, the transducer of this vertical section dot structure, and all nodes of this transducer can be simultaneously shinny to reach high conversion efficiency with the sun light beam of equal densities.This benefit of bringing is, sun light beam and with the parallel incident of all nodes to obtain high conversion efficiency.
The 5th advantage is that this transducer can receive the gathering sun light beam of quantity required to reach high conversion efficiency and lower unit energy conversion cost.
The 6th advantage is that this compound (multinode, multispectral) transducer with high-conversion rate can low-cost batch be processed its technology, connected mode, simple for assembly process.It is low that the device for converting solar energy unit cost is installed, and it has wider competitive advantage than gas-fired equipment is installed.
Description of drawings
Fig. 1 is the structural representation with multinode transducer of vertical wall, it shows three photoelectricity nodes 110, this transducer can comprise more than 1,000 identical parallel node 110, and each node is established 130 on high-crystallinity n layer by highly doped n+ layer 120 and highly doped p+ layer 140 folder and formed.
Fig. 2 is the structural representation with multinode transducer of inclined wall, it shows three photoelectricity nodes 160, this transducer can comprise more than 1,000 identical node 160, and each node is established 130 on high-crystallinity n layer by highly doped n+ layer 120 and highly doped p+ layer 140 folder and formed.
Fig. 3 is the photoelectricity node structure schematic diagram with vertical wall, and this photoelectricity node and Doped n+layer 120, high-crystallinity n layer 130, highly doped p+ layer 140 form one, and it is folded between two metal levels 150, and this metal level easily fuses or is conventional metal conductors;
It also shows and node 110 corresponding to energy band diagrams 200, shows the incident solar energy light beam 210 that produces electronics 220 and hole 230.
Fig. 4 is the photoelectricity node structure schematic diagram with inclined wall; This photoelectricity node and Doped n+layer 120, high-crystallinity n layer 130, highly doped p+ layer 140 form one, and it is folded between two metal levels 150, and this metal level easily fuses or is conventional metal conductors;
It also shows and node 110 corresponding to energy band diagrams 200, shows the incident solar energy light beam 210 that produces electronics 220 and hole 230;
The present invention adopt vertical and inclined wall with the formation multinode transducer fixed with type of substrate; For example, when using silicon chip, by simple transplanting inclined wall, this inclination node can be processed easily because on silicon chip the V-shaped groove of etching inclined wall easily; And when using gallium phosphide (GaP), phosphorus gallium indium (InGaP), GaAs (GaAs) and germanium (Ge) substrate, the vertical wall transplanting also can be used; In fact, any substrate can adopt vertical wall to transplant when not taking use to transplant inclined wall, in transplanting, use V-shaped groove to preset step more a lot of than transplanting vertical wall and lacking, in addition, these two kinds transplanting types are all very simple.
Fig. 5 is the stereogram with compound converter of vertical wall, and it shows the relative thickness of vertical node 110, highly doped n+ layer 120, low-doped n node layer 130, highly doped p+ layer 140 and metal connecting layer 150 different layers; It also shows and multinode transducer 110 corresponding to energy band diagrams 200.
Fig. 6 is the stereogram with compound converter of inclined wall; It shows the relative thickness of vertical node 110, highly doped n+ layer 120, low-doped n node layer 130, highly doped p+ layer 140 and metal connecting layer 150 different layers; It also shows and multinode transducer 110 corresponding to energy band diagrams 200.
Fig. 7 is the sunlight spectrogram, it shows spectral luminance factor and focuses on the wavelength relativity figure of the solar spectrum 300 on the multispectral transducer 100, the spectrum overlaid that it responds mutually with the different switching device of being made by GaP320, GaAs330, Si340 and Ge350 substrate.These the five kinds transducers with different-energy type are responsible for conversion whole solar spectrum energy from the ultraviolet ray to the infrared ray; The solar energy residue that is not converted seldom.
Fig. 8 is the structural representation of compound converter; It shows the compound converter 400 that electrically is connected in series and is formed together and have thousands of nodes by GaP transducer 410, InGaP transducer 420, GaAs transducer 430, Si transducer 440 and Ge transducer 450, this node is with voltage, and it also shows line connection 460 and external loading 470.
Fig. 9 is the production rate of electron-hole pair and the curve chart of different switching device surface distance relation, it shows in order to obtain the transducer of high band gap energy, their thickness need not done greatly being most of electronic switch electron-hole pair, but be conversion electronics still less, this low band gaps energy transducer (for example: Si and Ge transducer 440,450) is thicker than the thickness of GaP410, InGaP420 and GaAs430 transducer.
Figure 10 is the structural representation of one group of multinode transducer processing on the crystallization substrate, this transducer 100 all by the conventional lithography mode form lateral chip at interval 510 and vertically street 520 form compound converter 400 with assembling.
Figure 11 for by transplant vertical wall processing transducer the time structural representation; It shows by etching material piece 530 and groove 540 and makes the mode of vertical wall of photoelectricity node 110 to support two grafts 570 and 580; It also shows groove depth 550 and groove width 560.
When high wall (such as in silicon coverter 440 and germanium 450 transducers) need to be transplanted, this groove needed sequenced doing widely to think that the high wall shift of groove is planted and prepare; GaP, InGaP and GaAs transducer 410,420 and 430, that its wall need not be done is too high (10 microns or be less than 10 microns enough); At this moment, adopt conventional lithography can be easy to realize normal transplanting.
The ring structure schematic diagram that Figure 12 is provided with for processing vertical wall transducer; This loop device has metallic plate 610 and glass cover-plate 620, and this glass cover-plate 620 has an O shape ring, and it is in order to the crystal 5 00 of sealing processing; The crystal of this processing comprises the transducer 100 that is arranged on the glass substrate 590, and the crystal of this processing is washed by solvent 640 and flushing water, and the crystal that then enters sealing is to get rid of this etched contact.
Embodiment
1. introduce multinode transducer 100.
Referring to Fig. 1 to Fig. 5, this multinode transducer 100 can comprise one to thousands of photoelectricity nodes 110, and making each photoelectricity node 110 needs one highly to ooze (10
19/ CM
3) n+ semiconductor layer 120, one hypotonic (10
16/ CM
3) the high crystalline semiconductor layer 130 of n-class and one are high oozes (10
19/ CM
3) p+ semiconductor layer 140.In order to be formed with a sheet metal or eutectic metal level 150 between two adjacent n+ of the whole series resistance that reduces transducer 100 and the p+ layer.
As a preferred embodiment, making this multinode transducer 100 needs all nodes 110 to walk abreast and connect electric connection so that form the voltage that increases progressively; Can be referring to figs. 1 to Fig. 5.
First parts are node area and impurity-penetrating layers of multinode transducer 100 in the preferred embodiment; This node area and impurity-penetrating layer have high order of crystallization so that realize high as far as possible internal quantum efficiency, even are that cost is made related initial converter to pay the great number cost.To the expert and the those of ordinary skill of this area, the final unit cost that reduces in the power conversion of high conversion efficiency meeting that originates from high-quantum efficiency is conspicuous.
Second parts are 1000 the parallel nodes of making on 1cmx1cm chip (or the brilliant unit) form in transducer 100 that surpass in the preferred embodiment, and this chip can focus on the sun light beam of assembling.To the expert and the those of ordinary skill of this area, this form helps using effectively expensive wafer accessory and the requirement that reduces the low series resistance in the transducer 100, thereby to realize high conversion efficiency, is conspicuous; Because a low current transducer is enough to keep a high conversion rate.
The 3rd parts are to have the transducer 100 that the different semiconductor chip of different band gap is made in the preferred embodiment, it can cover from ultraviolet ray to ultrared whole solar spectrum, as shown in Figure 7, the structure of multispectral transducer 400 comprises with five transducers that semi-conducting material gallium phosphide (GaP) 410, phosphorus gallium indium (InGaP) 420, GaAs (GaAs) 430, silicon (Si) 440 and germanium (Ge) 45 are arranged.
The 4th parts are to use the conventional transducer of making 100 of transplanting on the vertical wall of transducer or inclined wall in the preferred embodiment, to reach the effect by the affected method of conventional photoetching.
2. introduce photoelectricity node 110.
Photoelectricity node of the present invention can be made into a vertical wall photoelectricity node 110 or an inclined wall photoelectricity node 160, and as shown in Figure 3 and Figure 4, both have identical energy band gap diagram.These nodes (110 and 160) to ooze assorted structure also identical, its version is n+-n-p+, is made of a n+-impurity-penetrating layer and n-impurity-penetrating layer-all layers of a p+-impurity-penetrating layer folder, it has the highest degree of crystallinity.
First element of this node structure is that it has high quantum efficiency, because it is more a lot of than lacking in the n+-p-p+ structure that the surface is binned in this n+-n-p+ structure, though the n layer diffusion length of minority carrier (hole) in the n+-n-p+ structure will be lacked much than the diffusion length of minority carrier (electronics) in the n+-p-p+ structure.
Second element of this node structure is to make 10 microns its quantum efficiencies that further improve by the width of the n layer 130 in the n+-n-p+ structure, and this width will be lacked much than the diffusion length of the minority carrier (hole) in this n layer.The short width of this n layer 130 also allows to surpass 1000 nodes in the 1cm length range, is the desirable linear length of transducer 100.
The 3rd element of this node structure is that its n+ and the p+ layer mode of can be at an easy rate transplanting by commerce reaches the thickness that is no more than 100 dusts.
The 4th element of this node structure is the high field region of this node, and its whole width that extends through this n layer 130 is to improve quantum efficiency in this process.
3. introduce the structure of compound converter 400.
Solar energy above 98% is positioned at ultraviolet ray to ultrared spectral region, as shown in Figure 7, in this solar spectrum 300, it shows the relation of solar irradiance and wavelength, only use a transducer 100, that is to say that the transducer that adopts the silicon chip manufacturing to form can not be converted into solar energy to solar spectrum 300.From Fig. 7, we can obviously find out, sunlight is converted to solar energy, to infrared spectrum, need five transducers corresponding with five different SPECTRAL REGION from this ultraviolet ray.
First parts of this multispectral transducer 400 are made by the different semiconductor chips of different band gap, in order to cover whole solar spectral from the ultraviolet ray to the infrared ray, as shown in Figure 7, the structure of multispectral transducer 400 comprises that it illustrates at Fig. 8 with five (or more a plurality of) transducers that semi-conducting material gallium phosphide (GaP) 410, phosphorus gallium indium (InGaP) 420, GaAs (GaAs) 430, silicon (Si) 440 and germanium (Ge) 450 are arranged.
Second parts of this multispectral transducer 400 are these all five transducer gallium phosphides (GaP) 410, phosphorus gallium indium (InGaP) 420, GaAs (GaAs) 430, silicon (Si) 440 and germanium (Ge) the 450th, adopt identical n+-n-p+ structure and identical manufacturing process.
The 3rd parts of this multispectral transducer 400 are these all five transducer gallium phosphides (GaP) 410, phosphorus gallium indium (InGaP) 420, GaAs (GaAs) 430, silicon (Si) 440 and germanium (Ge) the 450th, have the commercial substrate of high-crystallinity to be made.
The 3rd parts of this multispectral transducer 400 are these all five transducer gallium phosphides (GaP) 410, phosphorus gallium indium (InGaP) 420, GaAs (GaAs) 430, silicon (Si) 440 and germanium (Ge) 450 in conjunction with the conversion efficiency that forms much larger than current 39%.
4. introduce the composition of compound converter 400.
As shown in Figure 8, the composition of compound converter 400 comprises five of using semiconductor gallium phosphide 410, phosphorus gallium indium 420, GaAs 430, silicon 440 and germanium 450 or more than five transducer.To those skilled in the art, other polytype semiconductors also can be used to cover whole solar spectrum, and these semiconductors can be processed into the multinode transducer 100 identical with structure shown in Figure 6 with Fig. 5 easily.In addition, the photoelectricity node 110 identical with structure shown in Figure 4 with Fig. 3 also can adopt other any semiconductor processing and manufacturing except can adopting above-mentioned described semiconductor manufacturing.
First parts that compound converter 400 is formed are that the transducer of arbitrary number can be connected in series and forms combined converter 400.
Second parts that compound converter 400 is formed are that all the different switching devices with different band gaps link to each other by simple wire-bonded (simple wire bonding) 460 at the end of each transducer, as shown in Figure 8.Simple wire-bonded (simple wire bonding) also can be used to realize being connected of compound converter 400 and external load (external load) 470.
The 3rd parts that compound converter 400 is formed are these broad-band gap transducers, and gallium phosphide 410 is installed in the position, forefront realizing at first receiving sun light beam, and this minimum band gap transducer, germanium 450 is fixed on the rearmost end position.Optimize the layout of these different switching devices so that gallium phosphide transducer 410 can at first be changed ultraviolet solar energy, the radiant light of transmission as shown in Figure 9 is few more, and the infrared radiation light of many more transmissions can further be transmitted to the germanium transducer 450 of rearmost end before being converted to electric energy.In this manner, when sun light beam was horizontally through compound converter structure 400, all solar energy of different wave length will effectively be changed under the situation that does not have transducer to interfere.
The 4th parts that compound converter 400 is formed are according to the electron hole production rate and as shown in Figure 9 from the incident distance versus situation of transducer face, optimize the thickness of the incidence angle direction of each transducer type.Like this, this gallium phosphide transducer 410 is as the thinnest transducer (about 5 microns just much of that), and this germanium transducer 450 is as the thickest transducer (about 100 microns just much of that), and the thickness of other transducer is between these two thickness limits.
The 5th structure that compound converter 400 is formed is that adjacent transducer does not firmly connect, so under the situation of the projecting environment of temperature, their different temperature expansion rates can not make the layout of compound converter 400 deform.This is extremely important, because the different material that uses in these transducers has visibly different temperature expansion rate.
The 6th structure that compound converter 400 is formed is that adjacent transducer is separated by ultra-thin silicon oxide layer (sioxide layer), form an asymmetric Fabry-Perot-type cavity, this Fabry-Perot-type cavity with the adjacently situated surfaces of adjacent converter as parallel method Fabry-Perot-type speculum.For making oxidated layer thickness suitable, infer interference with the corresponding wavelength of the band gap of front end converter, in this chamber so that the repeatedly emission of this wavelength takes place.This situation will make the sun beam absorption maximization of this kind wavelength in adjacent transducer, thereby when assembling compound converter 400 thinner transducer be used.On the one hand, aspect the crystalline material of better utilization costliness, this is very important, on the other hand, because used thin layer, has also simplified the transplanting of transducer wall.
The 7th structure that compound converter 400 is formed is that the transducer of more different band gap if desired is used at ultraviolet ray conversion solar in the infrared spectrum, the simply parallel stack of this more transducer forms compound converter, therefore, the high thickness of each transducer and unnecessary.
5. introduce compound converter with radiator.
When sun light beam is assembled on compound converter 400, the temperature of this compound converter 400 will be given birth to height, thereby reduce conversion efficiency; When assembling on transducer above 1000 bundle sunlights, transducer will be damaged, unless this transducer temperature can be cooled off.For the expense that makes cooling reaches an acceptable level, our preferred embodiment has a metal heat sink, and it is one by metallic plate as interface and the tight set of compound converter.
First parts of this radiator are fin, and for heat is come out from transducer, the quantity of this fin and big I are made as required, mainly the temperature that will keep according to this compound converter and deciding.As characteristics, be lower than 200 ℃ temperature by a pocket-size compact shape radiator being installed easily in this field, just can being kept.
6. introduce the positive cooling device of compound converter.
In a further advantageous embodiment, this compound converter 400 is converted to thousands of watts electric energy to thousands of sun light beams of assembling with speculum.In this case, use circulating pump actively to cool off the indispensable of change.Only can accomplish positive cooling by directly on radiator 600, connecting the cool cycles pipe.For the positive cooling of appropriateness, recirculated water is just enough.Positive cooling for height may need circulating liquid nitrogen, and in order to satisfy the needs of this kind structure, this compound converter must be packed in the clamp ring of a vacuum to prevent that water from condensing.
7. introduce the gathering of sunlight.
The most worthwhile mode of using compound converter 400 is exactly it is big with one, the plastics Fresnel lens becomes one mutually cheaply, and it can focus on sun light beam on the transducer 400.The size of used Fresnel lens determines that by the quantity that is lower than the sun light beam that 200 ℃ and the formula compound converter that can be cooled handle under this superheated sun light beam effect, conversion efficiency begins rapid reduction, and the integrality of this transducer begins to wear out.Under the cooling effect of radiator, assemble about 1000 sun light beam, Fresnel lens big or small enough.But for to ultra-violet radiation resisting, these lens need further to strengthen.Generally, poly-carbonic acid polymer has surpassed acrylic polymer materials as preferred material.
To surpassing 1000 sun beams focusing conversions, first-selected metallic mirror to this, also needs the positive cooling device of foregoing description.
8. introduce vertical wall multinode transducer.
In the preferred embodiment, this multinode transducer 100 utilizes vertical wall form parallel node 110 to allow the unified electron-hole pair that produces in node region 130, goes out as shown in Figure 5 like that.These vertical walls are that a plurality of free-revving engines are provided with:
The High-Field zone that is positioned at node n layer 130 of a unification is provided.
An independent structures that forms compound converter for ease of assembly is provided.
Provide the structure that on any semiconductor chip, can process easily, especially: gallium phosphide (GaP) 310, phosphorus gallium indium (InGaP) 320, GaAs (GaAs) 330, silicon (Si) 340 and germanium (Ge) 350.
9. introduce inclined wall multinode transducer.
In a further advantageous embodiment, as shown in Figure 6, this multinode transducer 100 utilizes inclined wall to form a plurality of nodes expediently, especially forms thick node on different incident directions.These inclined walls are that a plurality of free-revving engines are provided with:
Provide a convenient way of transplanting inclined wall to create a thick node.
An independent structures that forms compound converter for ease of assembly is provided.
Provide one with the structure of (100 crystal orientation) silicon chip of low cost use V-shaped groove etching with the formation inclined wall.
As shown in Figure 6, this inclined wall also provides simple support for the hard contact that applies the interaction node.
It is a kind of by the fin of radiator directly being connected near the effective ways that cool off the multiplex node of transducer 100 node that the hard contact of these interaction nodes also provides.
10. introduce the application of multinode, multispectral transducer.
The compound sensor with desired light spectral property 400 through optimizing can be assembled by the transducer of arbitrary quantity and type at random to adapt to specific application.Illustrate:
When it was used on the satellite, compound converter can be installed a large reflective mirror and focus on 10000 sun light beams on the transducer in the past, thereby produces thousands of watts electric energy.
When it was used on the satellite, compound converter can be installed a prevailing broad-band gap transducer so that the ultraviolet spectrogram that is rich in light beam is converted to the gathering light beam.
When it is used on the airborne vehicle platform, compound converter can only install GaAs (GaAs) transducer be incident upon on the transducer, be converted to thousands of watts electric energy from the helium or the intrafascicular laser energy of Ne laser in other places.
When it was used to be difficult to receive on the remotely monitored sensor of remote sensing signal, compound converter can be installed and only be used for neodymium alloy beam of laser energy is transformed into germanium transducer on the compound converter from airborne vehicle.
When it was used on the notebook computer, the compound converter with a pair of 3 different photoelectricity nodes (InGaP, GaAs, Ge) was in order to use for sufficient electric energy the solar energy converting of disperseing for notebook computer.
11. introduce the manufacture process of relevant transducer.
For reducing the production cost of transducer 100, its manufacture process must be simple, and its manufacturing procedure must be simplified and be spent low.Among the present invention, the manufacture process actual needs of transducer satisfies two conditions, because on single 6 inches crystal substrates, it relates to and surpasses 900 multinode transducer 100, as shown in Figure 10, can on crystal, process above the brilliant unit of 900 1cm*0.2cm transducers formation lateral chip interval 510 with vertically street 520 is brilliant first with isolating converter by simple conventional photoetching process.Because different semiconductor crystal substrates is adopted processing in a like fashion, so a collection of five kinds of dissimilar crystal of processing can surpass 900 transducers for per five dissimilar band gap produce.To those experienced persons in photoetching process field, process a collection of five kinds of dissimilar crystal less thaies one and carry.
In the preferred embodiment, the main production process of the transducer 100 of processing vertical wall is as follows:
1. operation handlebar n N-type semiconductor N crystal links to each other with glass substrate by hand.
The polishing grinding crystal to the suitable thickness of its band gap thickness.
3. crystallographic etch Cheng Jingyuan is formed transducer 100 thereon, an one structure is illustrating as Figure 10.
In brilliant unit etching bath 540 to form material piece 530, as shown in figure 10.
5. form a rational groove depth 550 and groove width 560 ratios so that graft 570 and 580 is transplanted on the wall of material piece 53.
6. in all brilliant units, transplant material piece 530.
7. precipitation eutectic thin metal layer is to cover graft.
8. crystal 5 00 is processed in order to make the ring 600 of vertical wall, as shown in figure 11, it shows an example through the transducer 100 after the processing in ring 600.
9. being sealed between metallic plate 610 and the glass cover 620 in ring 600 and through the crystal 5 of processing 00, this glass cover 620 is provided with O shape ring 630.
10. in ring 600, add flushing water then insert solvent 640 with combine from glass substrate 590 and through the transducer of processing 100.
11. solvent and flushing water are discharged fully from encircling in 600 by vacuum inlet 650.
12. when discharging formation transducer 11, merge the wall of a plurality of finished transducers.
13. being heated to about 270 ℃, the finished crystal 5s 00 of ring in 600 form transducer 100 to connect adjacent wall.
In another preferred embodiment, as second method, the main production process of the transducer 100 of processing vertical wall is as follows:
1. the operation handlebar semiconductor crystal links to each other with glass substrate by hand.
The polishing grinding crystal to the suitable thickness of its band gap thickness.
3. crystallographic etch Cheng Jingyuan is formed transducer 100 thereon, an one structure is illustrating as Figure 10.
In brilliant unit etching bath 540 to form material piece 530, as shown in figure 10.
5. form a rational groove depth 550 and groove width 560 ratios so that graft 570 and 580 is transplanted on the wall of material piece 53.
6. in all brilliant units, transplant material piece 530.
7. precipitation eutectic thin metal layer is to cover graft.
8. treated crystal is transferred to through on the flexible substrates of pre-stretching.
9. the retraction of flexible substrates that makes pre-stretching is to merge the wall of transducer 100.
10. form transducer 100 being positioned on the flexible substrates and being heated to about 270 ℃ to connect adjacent wall through the crystal 5 00 of processing.
11. remove transducer 100 from flexible substrates.
In another preferred embodiment, as the 3rd method, the main production process of the transducer 100 of processing vertical wall is as follows:
1. operation handlebar n N-type semiconductor N crystal links to each other with glass substrate by hand.
The polishing grinding crystal to the suitable thickness of its band gap thickness.
3. plane of crystal is transplanted to n+ layer 120.
4. the n+ layer of eutectic precipitated metal to the process transplanting.
5. crystal is transferred on the another one glass substrate so that other plane of crystal shows.
6. second surface of transplanting this crystal is to P+ layer 140.
7. the P+ layer 140 of eutectic precipitated metal to the process transplanting.
8. etching forms the crystal that is about 1cm*0.1cm in brilliant unit.
9. remove brilliant unit from substrate.
10. the eutectic metal flat between brilliant unit and a plurality of brilliant unit splice and form multinode transducer 100.
11. to treated a plurality of brilliant units be heated to about 270 ℃ in order to connect adjacent wall to form transducer 100.
In another preferred embodiment, as the 4th method, the main production process of the transducer 100 of processing vertical wall is as follows:
1. from the silicon-on-insulator (silicon-on-insulator) of silicon fiml with 2 micron thickness.
2. the metal-organic chemical vapor deposition equipment (MOCVD) by the silicon fiml top generates SiGe (SiGe) layer that is complementary with lattice.
3. generate n+ based semiconductor layer by MOCVD at SiGe (SiGe) layer top.
4. generate n based semiconductor layer at n+ based semiconductor layer top by MOCVD.
5. generate p+ based semiconductor layer at n based semiconductor layer top by MOCVD.
6. repeat 20 step 3-5 have 20 n+-n-p+ nodes with generation heap.
7. has precipitation eutectic metal on the heap of 20 nodes at this.
8. be this substrate scribing a plurality of brilliant units, and each brilliant unit comprise 20 n+-n-p+ nodes.
9. substrate is forwarded on the plastic carrier with the brilliant unit near plastic carrier.
10. from the silicon-on-insulator substrate, remove silicon chip by etched mode.
11. remove silicon and silicon germanide layer by etching optionally.
12. precipitation metal eutectic layer in the brilliant unit on the plastic carrier.
13. remove unnecessary eutectic metal from the first periphery of crystalline substance.
14. remove brilliant unit from plastic carrier.
15. the heaps that heating has 20 brilliant units to about 270 ℃ in order to connect adjacent wall has 1000 nodes with formation transducer.
16. repeating step 1-15 forms the different-energy transducer together with the different semiconductor (for example: diamond, aluminium arsenide, carborundum, gallium phosphide, phosphorus gallium indium, GaAs, germanium, silicon, arsenic gallium indium and indium arsenide) that generates by MOCVD.
17. different-energy transducer crystal is linked to each other to form compound converter with the wire assembling.
But in another preferred embodiment, the main production process of the transducer 100 of processing inclined wall is as follows:
1. the operation handlebar semiconductor crystal links to each other with glass substrate 590 by hand.
The polishing grinding crystal to the suitable thickness of its band gap thickness.
3. be crystallographic etch brilliant unit, in this crystalline substance unit, form a plurality of transducers 100.
In brilliant unit the etching V-shaped groove forming the material piece.
5. the ratio that forms a rational groove depth and groove is with graft be transplanted on the wall of material piece.
6. transplant the wall that is positioned at the material piece in all brilliant units.
7. precipitation skim eutectic metal 170 covers graft to form transducer 100 as shown in Figure 6.
8. battery lead plate and the V-shaped groove that fills up heat-conducting metal are with to transducer 100 heat radiations.
9. remove on-chip all transducers 100.
Claims (43)
1. a solar converter is characterized in that, comprises at least two adjacent solar cell layers, and each the layer comprise at least one node, at least one layer do not need with the lattice of adjacent layer adaptive promptly with at least one other the layer link to each other.
2. solar converter as claimed in claim 1 is characterized in that, at least one described layer comprises at least one node of first type of at least one band-gap energy.
3. solar converter as claimed in claim 1, it is characterized in that, at least one described layer comprises at least one node of first type of at least one first band-gap energy, and at least one is different from the node of at least one other type of the band-gap energy of the described first kind.
4. solar converter as claimed in claim 1 is characterized in that, every layer comprises at least 10 individual nodes.
5. solar converter as claimed in claim 1 is characterized in that, every layer comprises at least 100 individual nodes.
6. solar converter as claimed in claim 1 is characterized in that, described each transducer comprises at least 10 multinode layers.
7. solar converter as claimed in claim 1 is characterized in that, described each transducer comprises at least 100 multinode layers.
8. solar converter as claimed in claim 1 is characterized in that, the node density of described every cellar area is: every square centimeter of at least 1000 nodes.
9. solar converter as claimed in claim 1 is characterized in that, the sun light beam of the relative incident of described node is parallel to be provided with, so that each node is illuminated by the solar energy from the sun light beam of incident.
10. solar converter as claimed in claim 1 is characterized in that described node is electrically connected.
11. solar converter as claimed in claim 1 is characterized in that, processes separately or handles to be independent of other any layer for every layer.
12. solar converter as claimed in claim 1 is characterized in that, ground floor and at least one other layer are processed or be processed into to different substrates.
13. solar converter as claimed in claim 1 is characterized in that, described node is processed by semiconductor fabrication.
14. solar converter as claimed in claim 1 is characterized in that, described node is produced by organic generation.
15. solar converter as claimed in claim 1 is characterized in that, ground floor obtains at least one band-gap energy when at least one low band gaps passes at least one layer that is positioned under it.
16. solar converter as claimed in claim 15 is characterized in that, at least one band gap is at least 1.8 electronvolt.
17. solar converter as claimed in claim 15 is characterized in that, at least one band gap is at least 1.4 electronvolt.
18. solar converter as claimed in claim 15 is characterized in that, at least one band gap is at least 1.1 electronvolt.
19. solar converter as claimed in claim 15 is characterized in that, at least one band gap is at least 0.6 electronvolt.
20. solar converter as claimed in claim 15 is characterized in that, described each node comprises the first wall with n+ type carrier and has second wall of p+ type carrier.
21. solar converter as claimed in claim 20 is characterized in that, has n type carrier by the sandwich zone of described each wall.
22. solar converter as claimed in claim 20 is characterized in that, has p+ type carrier by the sandwich zone of described each wall.
23. solar converter as claimed in claim 20 is characterized in that, the sun light beam of described first wall and described second wall and this incident is perpendicular.
24. solar converter as claimed in claim 20 is characterized in that, the symbolic surface of described first wall and described second wall and node layer is perpendicular.
25. solar converter as claimed in claim 1 is characterized in that, described node comprises width less than the minority carrier diffusion length, and this carrier is created in the node by incident sun light beam.
26. solar converter as claimed in claim 25 is characterized in that, described width comprises the high electric field region that extends through described width.
27. solar converter as claimed in claim 1 is characterized in that, other node width of described first node and at least one is identical.
28. solar converter as claimed in claim 1 is characterized in that, other node width of described first node and at least one is different.
29. solar converter as claimed in claim 1 is characterized in that, other layer thickness of described ground floor and at least one is identical.
30. solar converter as claimed in claim 1 is characterized in that, other layer thickness of described ground floor and at least one is different.
31. a compound converter comprises at least two transducers as claimed in claim 1, described at least two transducers are superimposed so that absorb at least two band gap of conversion simultaneously.
32. compound converter as claimed in claim 31 is characterized in that, each transducer is included as the node width that at least one band-gap energy optimization is provided with.
33. compound converter as claimed in claim 31 is characterized in that, each band gap is absorbed and changes in the transducer of each self-separation setting.
34. compound converter as claimed in claim 31, it is characterized in that, from being up to minimum band gap, the forefront of at least two transducers and rear alignment sequence arrangement, non-switched sun light beam is not horizontally through subsequently transducer to realize conversion with interfering in the transducer of forefront.
35. compound converter as claimed in claim 31 is characterized in that, all described transducer series connection electrically connect.
36. compound converter as claimed in claim 31 is characterized in that, the transducer that at least two transducers are adjacent is loosely connected, and the structure of described compound converter is unlikely distortion because of the transducer with different coefficient of thermal expansions.
37. compound converter as claimed in claim 31 is characterized in that, at least two transducers are separated by Fabry-Perot-type cavity, described sun light beam therein with a specific spectral wavelength through repeatedly refraction.
38. compound converter as claimed in claim 37 is characterized in that, described Fabry-Perot-type cavity comprises the chamber spacing by the decision of silicon oxide layer thickness.
39. compound converter as claimed in claim 37 is characterized in that, described silicon oxide layer comprises transformable thickness so that be positioned at least one band-gap energy maximization that is absorbed of each transducer.
40. compound converter as claimed in claim 31, it is characterized in that, at least one and the integrated radiator of described compound converter when a plurality of sun light beams are incident on the compound converter, rely on the temperature of this this compound converter of radiator can remain below 250 ℃.
41. compound converter as claimed in claim 40 is characterized in that, at least one radiator comprises passive cooling device.
42. compound converter as claimed in claim 40 is characterized in that, at least one radiator comprises positive cooling device.
43. compound converter as claimed in claim 1 is characterized in that, it also comprises the Fresnel Lenses in order to the focusing sunlight bundle, and before sun light beam was converted the device conversion, the intensity of the sun light beam of its gathering equated with multi beam sunlight beam intensity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810167343A CN101728440A (en) | 2008-10-22 | 2008-10-22 | Solar converter and compound converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810167343A CN101728440A (en) | 2008-10-22 | 2008-10-22 | Solar converter and compound converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101728440A true CN101728440A (en) | 2010-06-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810167343A Pending CN101728440A (en) | 2008-10-22 | 2008-10-22 | Solar converter and compound converter |
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| Country | Link |
|---|---|
| CN (1) | CN101728440A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101976691A (en) * | 2010-08-23 | 2011-02-16 | 北京工业大学 | A five-junction compound semiconductor solar photovoltaic cell chip |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4295002A (en) * | 1980-06-23 | 1981-10-13 | International Business Machines Corporation | Heterojunction V-groove multijunction solar cell |
| CN2888652Y (en) * | 2005-07-25 | 2007-04-11 | 胡宏勋 | N type substrate monocrystalline silicon solar battery |
-
2008
- 2008-10-22 CN CN200810167343A patent/CN101728440A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4295002A (en) * | 1980-06-23 | 1981-10-13 | International Business Machines Corporation | Heterojunction V-groove multijunction solar cell |
| CN2888652Y (en) * | 2005-07-25 | 2007-04-11 | 胡宏勋 | N type substrate monocrystalline silicon solar battery |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101976691A (en) * | 2010-08-23 | 2011-02-16 | 北京工业大学 | A five-junction compound semiconductor solar photovoltaic cell chip |
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