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CN101714572B - Organic light-emitting apparatus - Google Patents

Organic light-emitting apparatus Download PDF

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Publication number
CN101714572B
CN101714572B CN2009102541487A CN200910254148A CN101714572B CN 101714572 B CN101714572 B CN 101714572B CN 2009102541487 A CN2009102541487 A CN 2009102541487A CN 200910254148 A CN200910254148 A CN 200910254148A CN 101714572 B CN101714572 B CN 101714572B
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CN
China
Prior art keywords
organic light
light emitting
emitting apparatus
resin
resin bed
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Expired - Fee Related
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CN2009102541487A
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Chinese (zh)
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CN101714572A (en
Inventor
盐崎笃志
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Canon Inc
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Canon Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13069Thin film transistor [TFT]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

An organic light-emitting apparatus includes a substrate, a plurality of organic light-emitting devices which are arranged above the substrate and which form a light-emitting section, a circuit section which is disposed around the light-emitting section and which controls the operation of the organic light-emitting devices, a plurality of wiring lines extending between the light-emitting section and the circuit section, and a resin layer which extends into the light-emitting section and which extends from the light-emitting section over the wiring lines.

Description

Organic light emitting apparatus
The application be that June 12, application number in 2008 are 200810109444.3 the applying date, denomination of invention divides an application for the patent application of " organic light emitting apparatus ".
Technical field
The present invention relates to organic light emitting apparatus, described organic light emitting apparatus comprises a plurality of organic light emitting apparatus.
Background technology
Each mainly comprises organic light emitting apparatus in the exploitation such as lower member: be arranged on the first electrode on the substrate; Organic compound layer, described organic compound layer is arranged on the first electrode, and comprises a plurality of sublayers that have such as the difference in functionality of charge transport function and charge recombination function; And be arranged on the second electrode on the organic compound layer.Organic light emitting apparatus is disposed on the substrate to form illuminating part.Organic light emitting apparatus comprises above-mentioned member.The circuit part that drives organic light emitting apparatus is disposed on the substrate and along illuminating part extends.Circuit part and illuminating part are connected to each other with distribution (wiring).
Japanese Patent Publication No.2001-013893 (hereinafter referred to as patent documentation 1) and Japanese Patent Publication No.2000-353594 (hereinafter referred to as patent documentation 2) disclose organic light emitting apparatus, each described organic light emitting apparatus comprises: illuminating part, described illuminating part comprise a plurality of organic light emitting apparatus that are arranged on the substrate; Circuit part, described circuit part is positioned at outside the illuminating part; Distribution, described distribution extends outside illuminating part; And resin bed.According to patent documentation 1 and 2, resin bed extends on circuit part and the distribution from illuminating part.
Disclosed organic light emitting apparatus further comprises in the patent documentation 1: interlayer insulating film (complanation layer), described interlayer insulating film is made by resin material, and described interlayer insulating film in being arranged in pixel section pixel thin film transistor and pixel electrode between extend, and also extend (Figure 11 of patent documentation 1 and example 11) at the source drive circuit.Interlayer insulating film (complanation layer) covering surfaces irregular, and prevent from effectively being deposited on that layer in the organic light emitting apparatus breaks, short circuit or irregular luminous.
Disclosed organic light emitting apparatus further comprises in the patent documentation 2: dike (bank), described dike is made by organic material, and extend between a plurality of pixels of described dike in being arranged in display part and on every side, and also extend to data side drive circuit and the scan-side drive circuit (Fig. 3 of patent documentation 2) that is arranged in outside the display part.Described dike prevents that effectively the organic compound that comprises in the contiguous pixel from mixing mutually.
The luminaire needs that comprise organic light emitting apparatus are manufactured by this way: moisture (moisture) and oxygen are controlled do not infiltrate organic light emitting apparatus by strict, because organic light emitting apparatus is responsive to heavens to moisture and oxygen.When luminaire comprises the resin bed (complanation layer) that is arranged between substrate and the lower electrode or reach the resin bed (separate layer) that extends on every side between organic light emitting apparatus, the method of making luminaire comprises dehydration, because resin bed comprises large quantity of moisture, wherein said lower electrode is included in the organic light emitting apparatus and is positioned on the substrate-side.Yet, be difficult to remove sufficient moisture by dehydration from resin bed.Therefore, existing problems: the moisture that comprises in the resin bed infiltrates organic light emitting apparatus to damage organic light emitting apparatus.By the moisture that comprises in the resin bed cause to the damage of organic light emitting apparatus for the regional especially severe around the illuminating part that comprises organic light emitting apparatus.According to patent documentation 1 and 2; although those resin beds are positioned at around those illuminating parts, for the problem that is caused by moisture, organic light emitting apparatus is not protected; therefore, organic light emitting apparatus existing problems: the moisture that is contained in those resin beds damages those organic light emitting apparatus.
Resin bed extends on the distribution from illuminating part, also extends in circuit part, and wherein said distribution extends around illuminating part.Resin bed physically protects distribution and circuit part to avoid external contact, so that with distribution and the circuit part electrode electric insulation from organic light emitting apparatus.Therefore, resin bed need to extend in circuit part and distribution, infiltrates organic light emitting apparatus in order to prevent moisture, and wherein said distribution is positioned at around the illuminating part and is electrically connected to organic light emitting apparatus.
Summary of the invention
The invention provides a kind of organic light emitting apparatus, described organic light emitting apparatus comprises: resin bed, and described resin bed extends in the circuit part from illuminating part; And distribution, described distribution is arranged in around the illuminating part.Can prevent that the moisture effects that comprises in the resin bed is arranged in the organic light emitting apparatus in the illuminating part.
Be included in the distribution that extends around the illuminating part according to the organic light emitting apparatus of first aspect present invention, also comprise from illuminating part extending in resin bed on the distribution.The moisture that comprises in the resin bed is so reduced so that be positioned at illuminating part resin bed on every side partly has minimum water content.That is, organic light emitting apparatus comprises: substrate; A plurality of organic light emitting apparatus, described a plurality of organic light emitting apparatus are disposed on the substrate and form illuminating part; Circuit part, described circuit part are arranged on around the illuminating part and control the operation of organic light emitting apparatus; A plurality of distributions that between illuminating part and circuit part, extend; And resin bed, described resin bed extends into illuminating part and extends on the distribution from illuminating part.Resin bed has the gap of extending between distribution.
Organic light emitting apparatus according to second aspect present invention comprises: substrate; A plurality of organic light emitting apparatus, described a plurality of organic light emitting apparatus are disposed on the substrate and form illuminating part; Circuit part, described circuit part are arranged on around the illuminating part and control the operation of organic light emitting apparatus; A plurality of distributions that between illuminating part and circuit part, extend; And resin bed, described resin bed extends into illuminating part and extends on the distribution from illuminating part.Resin bed has the part of extending between distribution, described part is thinner in the part that distribution extends than resin bed.
Organic light emitting apparatus according to third aspect present invention comprises: substrate; A plurality of organic light emitting apparatus, described a plurality of organic light emitting apparatus are disposed on the substrate and form illuminating part; Circuit part, described circuit part are arranged on around the illuminating part and control the operation of organic light emitting apparatus; A plurality of distributions that between illuminating part and circuit part, extend; And resin bed, described resin bed extends into illuminating part and extends on the distribution from illuminating part.Resin bed is thinner than the part that resin bed extends in illuminating part in the part that distribution extends.
Organic light emitting apparatus according to fourth aspect present invention comprises: substrate; A plurality of organic light emitting apparatus, described a plurality of organic light emitting apparatus are disposed on the substrate and form illuminating part; Circuit part, described circuit part are arranged on around the illuminating part and control the operation of organic light emitting apparatus; A plurality of distributions that between illuminating part and circuit part, extend; And resin bed, described resin bed extends into illuminating part and extends on the distribution from illuminating part.Resin bed is thinner than the part that resin bed extends in illuminating part in the part in the circuit part.
According to the present invention, the amount of the oxygen that comprises in the organic light emitting apparatus and/or moisture etc. is reduced to minimum amount allowing to keep the known function of resin bed, thereby can prevent that organic light emitting apparatus is deteriorated.Especially, can prevent that the organic light emitting apparatus that is arranged in the illuminating part is deteriorated.This allows organic light emitting apparatus to have high reliability.
Further aspect of the present invention will be from becoming obvious below with reference to accompanying drawing to the description of exemplary embodiment.
Description of drawings
Figure 1A is the schematic plan view according to the organic light emitting apparatus of the embodiment of the invention, and Figure 1B is the calcspar of described organic light emitting apparatus.
Fig. 2 is the schematic plan view that amplifies, and the end of illuminating part is shown and is positioned at illuminating part circuit part on every side, and described illuminating part and circuit part are included in the organic light emitting apparatus shown in Figure 1.
Fig. 3 is the schematic cross sectional view of getting along III-III line among Fig. 2 of organic light emitting apparatus.
Fig. 4 is the schematic cross sectional view that the IV-IV line along Fig. 2 of organic light emitting apparatus is got.
Fig. 5 is the schematic cross sectional view of configuration that the end of organic light emitting apparatus shown in Figure 2 is shown.
Fig. 6 is the schematic cross sectional view that another configuration of end shown in Figure 2 is shown.
Fig. 7 is the schematic cross sectional view that another configuration of end shown in Figure 2 is shown.
Fig. 8 is the schematic cross sectional view that another configuration of end shown in Figure 2 is shown.
Fig. 9 is the schematic cross sectional view that another configuration of end shown in Figure 2 is shown.
Figure 10 is the schematic cross sectional view that another configuration of end shown in Figure 2 is shown.
Figure 11 is the schematic cross sectional view that another configuration of end shown in Figure 2 is shown.
Figure 12 is the schematic cross sectional view that another configuration of end shown in Figure 2 is shown.
Figure 13 is the schematic cross sectional view that another configuration of end shown in Figure 2 is shown.
Figure 14 is the schematic plan view of configuration that the end of organic light emitting apparatus is shown.
Figure 15 is the schematic plan view of another configuration that the end of organic light emitting apparatus is shown.
Embodiment
Organic light emitting apparatus according to the embodiment of the invention comprises: substrate; A plurality of organic light emitting apparatus, described a plurality of organic light emitting apparatus are disposed on the substrate and form illuminating part; Circuit part, described circuit part are arranged on around the illuminating part and control the operation of organic light emitting apparatus; A plurality of distributions that between illuminating part and circuit part, extend; And resin bed, described resin bed extends into illuminating part and extends on the distribution from illuminating part.
Illuminating part comprises organic light emitting apparatus, and comes demonstration information by the operation of control organic light emitting apparatus and/or the light intensity of therefrom emission.Each organic light emitting apparatus comprises the part of the first electrode, organic compound layer and the second electrode that are arranged in successively on the substrate.Between the first and second electrodes, apply electric current and excite the luminescent material that is included in the organic compound layer.When the luminescent material that is excited turned back to ground state, light sent therefrom.The operation of circuit part control organic light emitting apparatus, from the light intensity of organic light emitting apparatus emission and/or from the photoemissive timing of organic light emitting apparatus etc., and comprise the circuit arrangement that for example switches (switching) device and capacitor.Organic light emitting apparatus is electrically connected to circuit arrangement by distribution.Circuit arrangement and distribution are formed on the substrate by patterning.
Resin bed extends on the distribution and comprises resin from illuminating part.Resin bed can have various configurations.Resin bed can be, for example, the complanation layer that in illuminating part, between substrate and the first electrode, extends or between organic light emitting apparatus and around the separate layer that extends.Because resin bed extends on the distribution, therefore can protect distribution to avoid external impact.And, can protect distribution in processing, to avoid machinery or chemical damage.This causes output to increase.And, might reduce the parasitic capacitance between distribution and first and second electrode, and the function that promotes the operation response also might be provided.
In organic light emitting apparatus, resin bed is followed the pattern of (follow) distribution; That is, resin bed extends to follow the shape of distribution at distribution.Especially, resin bed has the gap of extending between distribution, and the layer that is positioned under the distribution by described gap is exposed.Alternatively, resin bed has the part of extending between distribution, and described part is thinner in the part that distribution extends than resin bed.Resin bed can completely or partially be followed the shape of distribution.This allows to be reduced at the resin bed that distribution extends minimum, causes being included in moisture in the resin bed and/or the amount of oxygen and reduces.Resin bed can surpass distribution and extend in circuit part.In this case, the resin bed shape of follow circuit section preferably.Especially, resin bed preferably has the gap of extending between circuit arrangement, and the layer that is positioned under the circuit arrangement by described gap is exposed.Alternatively, resin bed preferably has the part of extending between circuit arrangement, and described part is thinner in the part that distribution extends than resin bed.The end of pattern preferably has forward conical by its shape (forwardtapered shape), breaks to prevent the layer on this pattern.This pattern preferably forming by being patterned in the step that forms opening or through hole in the illuminating part, in order to do not increase the number of manufacturing step, perhaps can form in another step.
Alternatively, the comparable resin bed of resin bed part that extends at distribution is thin in the part that illuminating part extends.That is, resin bed can have such configuration: wherein, the shape that the resin bed that extends at distribution partly is independent of distribution is uniformly, and thinner than the resin bed part of extending at illuminating part.This part that allows to be positioned at the resin bed around the illuminating part is reduced to minimum, causes being included in moisture in the resin bed and/or the amount of oxygen and reduces.Extend to circuit part when resin bed surpasses distribution, that is, when resin bed when circuit part and distribution extend, the comparable resin bed part of extending at illuminating part of part of the resin bed that extends in circuit part is thin.This also allows to be positioned at resin bed around the illuminating part and partly is reduced to minimumly, causes being included in moisture in the resin bed and/or the amount of oxygen and reduces.
Referring now to the organic light emitting apparatus of accompanying drawing description according to the embodiment of the invention.
Figure 1A is the schematic plan view of organic light emitting apparatus.Figure 1B is the explanation that the each several part of organic light emitting apparatus is shown.Shown in the corresponding Figure 1B of the two-dimensional position of the member shown in Figure 1A those.
With reference to Figure 1A and 1B, reference number 110 represents substrate, and reference number 120 represents illuminating part, reference number 130 represents column circuits section, reference number 140 representative row circuit parts, and reference number 150 represents the row wiring part, reference number 160 representative row wiring parts, and reference number 170 represents portion of terminal.Illuminating part 120 comprises: organic light emitting apparatus 121; Coupling part 122; The second electrode 123; With resin bed 180.Column circuits section 130 comprises first control circuit 131 and the first control line 132.Row circuit part 140 comprises second control circuit 141 and the second control line 142.Row wiring part 150 comprises the first data wire 151.Row wiring part 160 comprises the second data wire 161.Resin bed 180 extends on the first and second distributions 151 and 161 from illuminating part 120.With reference to Figure 1A, resin bed 180 surpasses the row wiring part and row wiring part 150 and 160 extends to column circuits section and row circuit part 130 and 140.Portion of terminal 170 comprises splicing ear 171.
Substrate 110 is basic materials, and is covered with illuminating part 120, column circuits section and row circuit part 130 and 140, row wiring part and row wiring part 150 and 160 and portion of terminal 170.Illuminating part 120 is arranged on the substrate 110, and comprises organic light emitting apparatus 121.Each organic light emitting apparatus 121 comprises the part of the first electrode (not shown), organic compound layer (not shown) and the second electrode 123, and these parts are arranged on the substrate 110 in this order.When electric current is applied between the second electrode 123 and the first electrode, organic light emitting apparatus 121 utilizing emitted lights.
The operation of organic light emitting apparatus 121 be included first control circuit 131 column circuits section 130, comprise the capable circuit part 140 of second control circuit 141 and be connected to the pixel circuit section (not shown) control of organic light emitting apparatus 121.Column circuits section and row circuit part 130 and 140 comprise made by amorphous silicon or low temperature polycrystalline silicon, as the thin-film transistor of switching device shifter.Column circuits section and row circuit part 130 and 140 may further include capacitor.First control circuit 131 is used the first control line 132 and is connected to each other, and also is used the first data wire 151 and is connected to pixel circuit section.Second control circuit 141 is used the second control line 142 and is connected to each other, and also is used the second data wire 161 and is connected to pixel circuit section.The first and second data wires 151 and 161 are used for suppling signal to pixel circuit section.Signal is not only determined emission brightness.In this embodiment, the first data wire or the second data wire 151 or 161 can be used to and will determine that the signal provision of emission brightness is to pixel circuit section.
The splicing ear 171 that is arranged in the portion of terminal 170 is used to external circuit is connected to the first and second control circuits 131 and the 141, first electrode and the second electrode 123.Splicing ear 171 is used flexible (flexible) distribution etc. and is connected to external circuit.
Zone around illuminating part 120 is illustrated among Figure 1B in the mode that is exaggerated, and actual width with several millimeters.The layout of organic light emitting apparatus 121 is illustrated schematically among Figure 1A.In following situation, pixel has the approximately size of 160 * 50 μ m: comprise the diagonal measurement size with 2.5 inches and contain the illuminating part of 320 * 240 pel array as the organic light emitting apparatus of display, and each pixel (luminescence unit) comprises red (R) light-emitting device, green (G) light-emitting device and indigo plant (B) light-emitting device.The increase of the number of the sub-pixel of pixel has reduced the size of pixel.
Resin bed 180 extends on the first and second data wires 151 and 161 from illuminating part 120.Resin bed 180 is followed the pattern of the first and second data wires 151 and 161.Resin bed 180 further extends on the first and second control circuits 131 and the 141 and first and second control lines 132 and 142.With reference to Figure 1A, resin bed 180 covers than the wide a little zone, zone that comprises illuminating part 120, the first and second data wires 151 and the 161, first and second control circuits 131 and the 141 and first and second control lines 132 and 142, therefore has the part that does not cover any parts in these parts.
Now resin bed 180 will be described in further detail.Fig. 2 is the schematic plan view that amplifies, and end, row wiring part 150 and the column circuits section 130 of illuminating part 120 is shown, and described row wiring part 150 and column circuits section 130 are arranged in around the illuminating part 120.Fig. 3 is the schematic cross sectional view of getting along III-III line among Fig. 2 of organic light emitting apparatus.Fig. 4 is the schematic cross sectional view of getting along IV-IV line among Fig. 2 of organic light emitting apparatus.With reference to figs. 2 to 4, reference number 124 represents the first electrode, reference number 125 represents organic compound layer, reference number 126 representatives are used to form the first film transistor (TFTs) of image element circuit, reference number 133 representatives are included the second thin-film transistor (TFTs) in be expert at circuit part or column circuits section 140 or 150, reference number 181 represents the first resin sublayer, and reference number 182 represents the second resin sublayer.
In this embodiment, resin bed 180 comprises the first resin sublayer 181 and the second resin sublayer 182.The first resin sublayer 181 cover by the first film transistor 126 cause irregular; Therefore, the first electrode 124, organic compound layer 125 and the second electrode 123 are smooth.This prevents that the parts of organic light emitting apparatus 121 from breaking, short circuit or utilizing emitted light brokenly.Extend between organic light emitting apparatus 121 and on every side the second resin sublayer 182, and have the function that contiguous organic light emitting apparatus 121 function that is electrically insulated from each other and the organic compound that prevents from comprising in the contiguous organic light emitting apparatus 121 are mixed.Extend between the second electrode 123 and the first and second data wires 151 and 161 the first and second resin sublayers 181 and 182.This reduces the electric capacity between the second electrode 123 and the first and second data wires 151 and 161.
The first and second resin sublayers 181 and 182 extend on row wiring part and the row wiring part 150 and 160 from illuminating part 120, and follow the pattern of the first and second data wires 151 and 161.Because extend at row wiring part and row wiring part 150 and 160 the first and second resin sublayers 181 and 182, row wiring part and row wiring part 150 and 160 can be protected from external impact etc. safely.Resin bed 180 has the gap of extending between the first and second data wires 151 and 161, and the layer that is positioned under the first and second data wires 151 and 161 by described gap is exposed.The amount of the oxygen that comprises in this permission organic light emitting apparatus or moisture etc. is reduced to minimum, thereby prevents that organic light emitting apparatus 121 is deteriorated.Because the first and second resin sublayers 181 and 182 extend in column circuits section and the row circuit part 130 and 140 above row wiring part and row wiring part 150 and 160 from illuminating part 120 as mentioned above; and follow the pattern of the first and second data wires 151 and 161, so column circuits section and row circuit part 130 and 140 can be protected from external impact etc. safely.
Has identical pattern with reference to figure 4, the first and second resin sublayers 181 with 182.The first and second resin sublayers 181 can have different patterns with 182.One in the first and second resin sublayers 181 and 182 can have narrow pattern, and another can have wide pattern.
Resin bed 180 can have another configuration, rather than the configuration shown in Fig. 2 to 4.Resin bed 180 can have for example arbitrary configuration shown in Fig. 5 to 8.Fig. 5 to 8 is profiles of getting along the IV-IV line of Fig. 2.As shown in Figure 5, only have the first resin sublayer 181 to extend in the column circuits section 130 from illuminating part 120, and can follow the pattern of column circuits section 130.According to this configuration, resin bed 180 protection column circuits sections 130 also have the volume that reduces.This allows organic light emitting apparatus opposing oxygen and moisture etc.Alternatively, as shown in Figure 6, only have the second resin sublayer 182 to extend in the column circuits section 130 from illuminating part 120, and can follow the pattern of column circuits section 130.This configuration provides aforesaid same advantage.
As shown in Fig. 7 or 8, the only pattern that can follow column circuits section 130 in the first and second resin sublayers 181 and 182, and another can extend in column circuits section 130 equably.In this configuration, the part that resin bed 180 extends in column circuits section 130 is thicker than the part beyond this part.Although this configuration causes comparing organic light emitting apparatus with the configuration shown in Fig. 4 to 6 and comprises more substantial oxygen or moisture etc., but this configuration prevents that effectively the second electrode 123 from breaking, because this configuration allows second electrode 123 to have two-stage step (two-stagesteps), and therefore the distance between the sub-step of each step is little.Configuration shown in Figure 7 has advantage: moisture can easily be removed from the first resin sublayer 181, because the second resin sublayer 182 does not exist between the first data wire 151.Configuration shown in Figure 8 has advantage: can prevent that the part that extend in column circuits section 130 the first resin sublayer 181 is stripped from, because the second resin sublayer 182 is on the first resin sublayer 181.
As shown in Figures 9 and 10, resin bed 180 can further comprise thin part 183, and described thin part 183 is extended between the first data wire 151, and thinner in the part that the first data wire 151 extends than resin bed 180.That is, the part of comparable the first resin sublayer 181 of part between the first data wire 151 of extending in column circuits section 130 part of extending in the first resin sublayer 181 is thick.In this configuration, the first resin sublayer 181 can have sandwich construction.Configuration shown in Fig. 9 and 10 and configuration shown in Figure 7 have advantage: moisture can easily be removed from the first resin sublayer 181, because the second resin sublayer 182 does not exist between the first data wire 151.
As shown in figure 11, resin bed 180 can extend at row wiring part 150, and does not extend in column circuits section 130.In this case, the layer outside the resin bed 180 preferably is used to protect row wiring part 150.As shown in figure 12, resin bed 180 can have thin part 183.Thin part 183 is thinner in the part that the first data wire 151 extends than resin bed 180.
As shown in figure 13, the part that the comparable resin bed 180 of part that resin bed 180 extends in row wiring part 150 and column circuits section 130 extends into illuminating part 120 is thin, and can extend at row wiring part 150 and column circuits section 130 equably, and the pattern of not following row wiring part 150 and column circuits section 130.According to this configuration, the part that resin bed 180 extends around illuminating part 120 has the volume that reduces.This allows resin bed 180 protection column circuits sections 130, and also allows organic light emitting apparatus to comprise the amount of the oxygen of minimizing or moisture etc.
Resin bed 180 can have various configurations.Resin bed 180 does not need to have fully the part corresponding to the shape that is included in circuit arrangement in column circuits section or the row circuit part 130 or 140 and/or distribution.As shown in figure 14, resin bed 180 can have the part that covers a plurality of Wiring patterns.Alternatively; as shown in figure 15; if the first and second data wires 151 and 161 have large width and therefore can be protected and need not fully be covered by resin bed 180, then resin bed 180 can have in the part for step 162 extensions of contact weakness (vulnerable).
In the first and second resin sublayers 181 and 182 one or two can respectively comprise a plurality of difform layer segments that have.Resin bed 180 can be covered with organic material layer, is used for stopping light and/or moisture.In the foregoing description, resin bed 180 had both comprised that the first resin sublayer 181 also comprised the second resin sublayer 182.Resin bed 180 needn't need both to have comprised that the first resin sublayer 181 also comprises the second resin sublayer 182, and can comprise the inorganic material sublayer, replaces in the first and second resin sublayers 181 and 182.Resin bed 180 can comprise, for example, and by the sublayer of making such as the material of metal oxide, silicon dioxide or silicon nitride.When resin bed 180 comprised the inorganic material sublayer, one in the first and second resin sublayers 181 and 182 can column circuits section and/or row circuit part 130 and/or 140 outside being positioned at illuminating part 120 be extended.
It is different and corresponding to the part of the first film transistor 126 in the illuminating part 120 that resin bed 180 can have thickness.Resin bed 180 can have the part that is positioned at desired position, has desired thickness.The first resin sublayer 181 can have sandwich construction and can have the different part of thickness.
With reference to figs. 2 to 4, display pixel is disposed in the matrix array that is called striped array (striped array).The invention is not restricted to matrix array.For example, display pixel can be disposed in the Zig-zag array that is called delta array (delta array).
Organic light emitting apparatus is as above described.The invention is not restricted to above-described embodiment.The a plurality of organic light emitting apparatus that comprise the light of launching different colours when organic light emitting apparatus, when for example launching the organic light emitting apparatus of red (R), green (G) and blue (B) light, organic light emitting apparatus can be used as full-color display.Alternatively, organic light emitting apparatus can be used as the display for TV, PC monitor and mobile phone etc.Because it is minimum that the oxygen in the organic light emitting apparatus or the amount of moisture can be reduced to, so organic light emitting apparatus can show high-quality image for a long time.Alternatively, organic light emitting apparatus can be used as for the display such as the imaging system of digital camera.The imaging system that is equipped with the display that comprises organic light emitting apparatus can show high-quality image for a long time.
The process of the parts that form organic light emitting apparatus is described referring now to Fig. 2 to 4.
Column circuits section and the formation of row circuit part with the image element circuit that is used for illuminating part are described below.Substrate 110 is by the inorganic material preparation such as glass, quartz or silicon.Alternatively, when organic light emitting apparatus when being flexible, substrate 110 is prepared by resin molding.Be formed on the substrate 110 with lower member: the first film transistor 126 is included in the image element circuit for illuminating part 120; And first and second control circuits 131 and 141, be included in respectively in column circuits section and the row circuit part 130 and 140.Especially, after basic unit was formed on the substrate 110, amorphous silicon layer was deposited in the basic unit,, was doped by polycrystallization according to conventional art, then was patterned.After gate insulator was formed on the resulting silicon layer, grid electrode layer was deposited on the gate insulator and then is patterned.After grid electrode layer was heavily doped, the first insulating barrier was deposited on the grid electrode layer, then is patterned with grid electrode layer.Source/drain electrode layer is deposited on the first insulating barrier, then is patterned.The second insulating barrier is deposited on the source/drain electrode layer, then be patterned, thereby the first film transistor 126 is formed.The first and second data wires 151 and 161 form by gate electrode or the source/drain electrodes of patterning with the first film transistor 126 with the first and second control lines 132 and 142.
Basic unit and the first and second insulating barriers can be made by silicon dioxide, silicon nitride or silicon oxynitride.Basic unit and the first and second insulating barriers can be formed by plasma enhanced chemical vapor deposition (CVD) etc.The gate electrode of the first film transistor 126 and source/drain electrodes and distribution can be made by single metal, alloy or silicide, and described single metal for example is tantalum, chromium, tungsten, molybdenum or aluminium.Gate electrode, source/drain electrodes and distribution can form by conventional sputtering technology or gas-phase deposition.With reference to figure 3, reference number 127 representatives are connected to the power supply line of the second electrode 123.Power supply line 127 forms with grid, source/drain electrodes.Alternatively, power supply line 127 can form with gate electrode.The first film transistor 126 can have source/drain electrodes and be disposed in top grid structure on substrate 110 sides, and perhaps gate electrode is disposed in the bottom gate configuration on substrate 110 sides.Each the first film transistor 126 can comprise a plurality of gate electrodes, has both comprised perhaps that the N-shaped gate electrode also comprised the p-type gate electrode.
The formation of the first resin sublayer is as described below.The first resin sublayer 181 is formed on the first film transistor 126 by applying (coating) technique, then be patterned, thereby coupling part (opening or through hole) 122 is formed in the first resin sublayer 181 that will be connected to the first electrode 124.The first resin sublayer 181 preferably is patterned in the formation of coupling part 122, thereby follows the column circuits section that is positioned at outside the illuminating part 120 and the shape of going circuit part 130 and 140.The first resin sublayer 181 can be by formation such as spin coating proceeding or roller coating technologies.The layer of the first resin sublayer 181 and other patternings can be made by photoresist.Alternatively, the first resin sublayer 181 can for example acrylic resin or polyimides be made by photosensitive resin.
The formation of the first electrode is described below.The layer that is used to form the first electrode 124 is deposited on the first resin sublayer 181 by sputtering technology etc., then is patterned, and the first electrode 124 is formed and has the shape identical with the shape of organic light emitting apparatus 121 thus.In the situation that then light be extracted by substrate 110 by the first electrode 124, namely in the situation that organic light emitting apparatus is end emission type, tin indium oxide (ITO), indium zinc oxide (IZO), tin oxide, zinc oxide or indium oxide etc. can be used to form the first electrode 124.In the situation that light is extracted by the second electrode 123, namely in the situation that organic light emitting apparatus is the top emission type, silver, aluminium, chromium or magnesium etc. can be used to form the first electrode 124.These materials can be used in combination to form the first electrode 124, and the first electrode 124 can have sandwich construction.The first electrode 124 and the second electrode 123 can be respectively anode and negative electrode, or are respectively negative electrode and anode.
The formation of the second resin sublayer below is shown.The second resin sublayer 182 is formed on the first resin sublayer 181 by coating processes, then is patterned to have the opening that is positioned at corresponding to the position of organic light emitting apparatus 121.In this step, the second resin sublayer 182 preferably is patterned in the formation of opening, to follow the column circuits section that is positioned at outside the organic light emitting apparatus 121 and the shape of going circuit part 130 and 140.The formation such as spin coating proceeding or roller coating technology can be passed through in the second resin sublayer 182 and the first resin sublayer 181, and can be made by acrylic resin or polyimides etc.
The formation of organic compound layer is as described below.Organic compound layer 125 is deposited on the second resin sublayer 182 by the vacuum vapor deposition technique of using metal mask, with corresponding with organic light emitting apparatus 121.In the situation of the light of organic light emitting apparatus 121 emission different colours, different materials can divide several to be deposited on the second resin sublayer 182.In the monochromatic situation of organic light emitting apparatus 121 emissions, organic compound layer 125 can be formed uniformly.Charge transport sublayer and charge injection sublayer can be formed uniformly.Each comprises that the electron transport sublayer that is not illustrated, luminous sublayer and hole transport the sublayer organic compound layer 125.The structure of organic compound layer 125 is not limited to such three-decker.Organic compound layer 125 can have: double-layer structure, by the hole transport the sublayer and electron transport/luminous sublayer consists of or by electron transport sublayer and hole transport/luminous sublayer consists of; Four-layer structure transports sublayer and hole by electron transport sublayer, luminous sublayer, hole and injects the sublayer and consist of; Or five-layer structure, transport sublayer, injection sublayer, hole and electronic injection sublayer by electron transport sublayer, luminous sublayer, hole and consist of.
The preferred example of used hole conveying material comprises: the triphen amine, N for example, N '-biphenyl-N, N '-two (3-aminomethyl phenyl)-1,1 '-diphenyl-4,4 '-diamines (TPD) and N, N '-diphenyl-N, N '-dinaphthyl-1,1 '-diphenyl-4,4 '-diamines (NPD); Heterocyclic compound, for example N-isopropyl carbazole, two carbazole derivates classes, pyrazoline derivative class, stilbene derivative class, hydazone derivative Lei, oxadiazole derivative class and phthalocyanine derivates class; And polymer class, for example polycarbonate-based, polystyrene type, Polyvinyl carbazole class, polysilanes and have derived from the inferior vinyl (polyphenylenevinylene) of the polyphenyl of any group in triphen amine and the heterocycles.
The material that is used to form luminous sublayer is oxine aluminium and anthracene or pyrene.In addition, at least a in the following material can be used for forming luminous sublayer: diphenylethyllene anthracene derivant class; Tetraphenylbutadiene derivative class; The coumarin derivative class; The oxadiazole derivative class; Diphenylethyllene benzene derivative class; The Pyrrolopyridine derivatives class; Purple cyclic ketones (perinone) derivative class; The cyclopentadiene derivant class; With thiadiazoles and pyridine derivate class; With polymer class for example: the inferior ethene derivatives of polyphenyl, poly-to benzene derivative class and polythiofuran derivative class.The example that joins the dopant of luminous sublayer comprises: rubrene, quinacridone derivative class, Fen oxazinone 660, DCM1, purple cyclic ketones, perylene, cumarin 540 and diaza indacene (diazaindacene) derivative class.
The example of employed electron transport material comprises: oxine aluminium, hydroxy benzo quinoline Pi, oxadiazole derivative class be 2-(4-xenyl)-5-(4-tert-butyl-phenyl)-1 for example, 3,4-oxadiazole (t-BuPBD), oxadiazole dimer derivate class, 1, two (the 4-tert-butyl-phenyls-1 of 3-, 3, the 4-oxadiazolyl) biphenylene (OXD-1), 1, two (the 4-tert-butyl-phenyls-1 of 3-, 3,4-oxadiazolyl) penylene (OXD-7), triazole derivative class and phenanthroline derivative class.
Above-mentioned material can be used to form separately the hole and transport sublayer, luminous sublayer or electron transport sublayer, and perhaps above-mentioned material can use in such a way: each dispersion of materials is in solvent-soluble or curable resin as polymeric binder.The example of solvent-soluble resin comprises: polyvinyl chloride, polycarbonate-based, polystyrene type, poly-(N-vinylcarbazole), polymethyl methacrylate class, polybutyl methacrylate class, polyesters, polysulfones, polyphenyl ethers, polybutadiene, hydrocarbon resin class, ketone resin class, phenoxy resin class and polyurethanes.The example of curable resin comprises: phenol (phenol) resinae, xylene resin class, Petropols class, urea resin class, melmac class, unsaturated polyester (UP) class, alkyd resins class, epoxy resin and organic siliconresin class.
The formation of the second electrode is described below.The second electrode 123 is deposited on the illuminating part 120 equably by sputtering technology etc.The second electrode 123 preferably is formed slightly larger than illuminating part 120 and is connected to power supply line 127.When organic light emitting apparatus is above-mentioned end during emission type, silver, aluminium, chromium or magnesium etc. can be used to form the second electrode 123.When organic light emitting apparatus was above-mentioned top emission type, tin indium oxide (ITO), indium zinc oxide (IZO), tin oxide, zinc oxide or indium oxide etc. can be used to form the second electrode 123.These materials can be used in combination to form the second electrode 123.The second electrode 123 can have sandwich construction.
The formation of containment member is as described below.After forming organic light emitting apparatus 121, preferably the reeded glass component of apparatus seals organic light emitting apparatus 121, is used for stopping oxygen or moisture etc. with the adhesive layer that is arranged on therebetween.Moisture absorber preferably is placed in the space between glass component and the organic light emitting apparatus 121.The protective layer of being made by silicon nitride or silicon oxynitride etc. can be deposited on the second electrode 123 by plasma enhanced CVD technique etc.
Example
To contrast now comparative example and describe example of the present invention.The invention is not restricted to described example.
Example 1
Organic light emitting apparatus is as described below to be produced.
By process form and then patterning be used to form thin-film transistor second insulating barrier identical with process described in the top embodiment.The layer of the acrylic resin PC415 that can obtain from JSR company is formed on the second insulating barrier by the spin coating proceeding that rotating speed is about 1200rpm.After prebake (pre-baked), use the photomask that has corresponding to the pattern of the first data wire 151 shown in Figure 11 and connection opening (through hole), this layer is exposed to intensity and is about 100mW/cm 2Light.This resulting layer is used can be from Tokyo OhkaKogyo Co., and the developer NMD-3 that Ltd. obtains develops, and then approximately curing behind 200 ℃ of quilts, thereby the first resin sublayer is formed.The first resin sublayer has the approximately thickness of 1.5 μ m.The distance L of the first end from illuminating part to the first resin sublayer 1With the distance L from illuminating part to its second end 2Respectively about 0.5mm and 0.1mm.
Thickness approximately the aluminium lamination of 10nm and thickness approximately the ITO layer of 40nm be deposited on the first resin sublayer by sputtering technology, then be patterned, thereby form the first electrode with sandwich construction.
The layer of the acrylic resin PC415 that can obtain from JSR company is formed on the first resin sublayer by the spin coating proceeding that rotating speed is about 2000rpm.After prebake, use the photomask that has corresponding to the pattern of the opening shown in Figure 10, this layer is exposed to intensity and is about 100mW/cm 2Light.This resulting layer is used can be from Tokyo Ohka Kogyo Co., and the developer NMD-3 that Ltd. obtains develops, and then approximately curing behind 200 ℃ of quilts, thereby the second resin sublayer is formed.The second resin sublayer has the approximately thickness of 0.5 μ m, and has the part of evenly extending in circuit part.The distance of the longitudinal end from illuminating part to the second resin sublayer and the distance from illuminating part to its lateral ends are respectively about 0.6mm and 0.2mm.
The workpiece (workpiece) that comprises the second resin sublayer in the chamber of the vacuum system that is equipped with mask alignment mechanism in 150 ℃ and 10 -2After Pa was heated 10 minutes, organic compound layer used mask 10 by vapour deposition -4Pa is formed on the second resin sublayer.Especially, (α-NPD) be deposited on the second resin sublayer transports the sublayer and is formed thereby thickness is about the hole of 60nm N '-α-dinaphthyl benzidine.Cumarin (1.0 % by weight) and three (oxine) aluminium (Alq3) are transported on the sublayer in the hole by codeposition, are formed thereby thickness is about the luminous sublayer of 30nm.Phenanthroline compounds is deposited on the luminous sublayer, is formed thereby thickness is about the electron transport sublayer of 10nm.Phenanthroline compounds and be deposited on the electron transport sublayer as the cesium carbonate of alkali-metal-doped agent is formed thereby thickness is about the electronic injection sublayer of 40nm.
ITO is deposited on the organic compound layer by sputtering technology, thus thickness approximately the second electrode of 60nm be formed.
The workpiece that comprises the second electrode is transported in the glove box that remains on-70 ℃ or lower dew point.Commercially available moisture absorber is attached to the reeded glass component of tool.Join glass component to workpiece with ultraviolet curing resin, so that moisture absorber is relative with the second electrode.
The organic light emitting apparatus of preparation is 80 ℃ of high temperature storage tests that stand 1000 hours as mentioned above.The periphery of resulting organic light emitting apparatus deteriorated slight to not detecting by visual inspection.
Comparative example 1
By preparing organic light emitting apparatus with essentially identical method described in the example 1, except the end of the first resin sublayer is formed uniformly in the mode identical with covering shown in Figure 11 the first data wire 151.In organic light emitting apparatus, the distance of the longitudinal end from the illuminating part to the resin bed and the distance from illuminating part to its lateral ends all are 0.5mm.Organic light emitting apparatus is 80 ℃ of high temperature storage tests that stand 1000 hours.The visual inspection of resulting organic light emitting apparatus shows: the periphery of illuminating part is by so deteriorated so that identify the deteriorated of display performance.
Example 2
Organic light emitting apparatus by with example 1 in the essentially identical method described prepare, except the second resin sublayer than the wide 0.05mm in the first resin sublayer.
Organic light emitting apparatus is 80 ℃ of high temperature storage tests that stand 1000 hours.The periphery of resulting organic light emitting apparatus deteriorated slight to not detecting by visual inspection.
Example 3
Organic light emitting apparatus by with example 1 in the essentially identical method described prepare, except the following describes those.The first resin sublayer with double-layer structure is formed by this way: thickness approximately 0.8 μ m, two namely thin than the first resin sublayer of describing in the example 1 layer segments forms by the spin coating proceeding that rotating speed is about 1500rpm.Main one does not form at illuminating part, and only forms in the part corresponding to the pattern of the first data wire 151 shown in Figure 11.Especially, main one is formed than the wide 0.02mm of the pattern of the first data wire 151.The first resin sublayer described in secondary one and the example 1 is formed from illuminating part and extends to circuit part and have pattern corresponding to the first data wire 151 shown in Figure 10.This allows to have the thickness larger than other parts corresponding to the pattern of the first data wire 151.Because data wire is at the organic light emitting apparatus downward-extension, so the organic layer that is arranged on the data wire partly is protruding.The irregular of organic layer relaxes, and therefore do not cause problem.The part of projection has the approximately inclination angle of 10 degree, does not therefore cause problem.Resin bed has the part of projection, and the part of described projection has less than the inclinations angle of 10 degree and the about height of 1 μ m.The part of these projections does not cause problem.
Organic light emitting apparatus is 80 ℃ of high temperature storage tests that stand 1000 hours.The periphery of resulting organic light emitting apparatus deteriorated slight to not detecting by visual inspection.
Although described the present invention with reference to exemplary embodiment, should be appreciated that to the invention is not restricted to disclosed exemplary embodiment.The scope of the claim of enclosing should be endowed the widest explanation, to comprise all changes and the 26S Proteasome Structure and Function that is equal to.

Claims (5)

1. organic light emitting apparatus comprises:
Substrate;
A plurality of organic light emitting apparatus, it is disposed on the described substrate and forms illuminating part;
Circuit part, it is arranged on around the described illuminating part and controls the operation of described organic light emitting apparatus;
A plurality of distributions, it extends between described illuminating part and described circuit part; With
Resin bed, it extends into described illuminating part and extends on the described distribution from described illuminating part,
Wherein, described resin bed is thinner than the part that described resin bed extends into described illuminating part in the part that described distribution extends.
2. organic light emitting apparatus according to claim 1, wherein, described resin bed surpasses described distribution from described illuminating part and extends in the described circuit part.
3. organic light emitting apparatus according to claim 1, wherein, each described organic light emitting apparatus comprises the part of the first electrode, organic compound layer and the second electrode that are arranged in successively on the described substrate, and described resin bed is included in the first resin sublayer of extending in the described illuminating part between described substrate and described the first electrode.
4. organic light emitting apparatus according to claim 1, wherein, each described organic light emitting apparatus comprises the part of the first electrode, organic compound layer and the second electrode that are arranged in successively on the described substrate, and described resin bed is included between the described organic light emitting apparatus and the second resin sublayer of extending on every side.
5. organic light emitting apparatus according to claim 1, wherein, each described organic light emitting apparatus comprises the part of the first electrode, organic compound layer and the second electrode that are arranged in successively on the described substrate; Described resin bed is included in the first resin sublayer of extending in the described illuminating part and between described organic light emitting apparatus and the second resin sublayer of extending on every side between described substrate and described the first electrode; And in described the first resin sublayer and described the second resin sublayer one extends at described distribution.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1258428A (en) * 1998-03-17 2000-06-28 精工爱普生股份有限公司 Substrate for patterning thin film and surface treatment thereof
CN1458640A (en) * 2002-05-15 2003-11-26 株式会社半导体能源研究所 Light emitting device and its producing method
CN1551686A (en) * 2003-05-08 2004-12-01 ������������ʽ���� Organic Electroluminescent Display Device
US6879309B2 (en) * 1999-04-27 2005-04-12 Semiconductor Energy Laboratory Co., Ltd. Electronic device and electronic apparatus
CN1812119A (en) * 2004-12-14 2006-08-02 三星Sdi株式会社 Organic light emitting display with auxiliary electrode line and method of fabricating the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG126714A1 (en) * 2002-01-24 2006-11-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1258428A (en) * 1998-03-17 2000-06-28 精工爱普生股份有限公司 Substrate for patterning thin film and surface treatment thereof
US6879309B2 (en) * 1999-04-27 2005-04-12 Semiconductor Energy Laboratory Co., Ltd. Electronic device and electronic apparatus
CN1458640A (en) * 2002-05-15 2003-11-26 株式会社半导体能源研究所 Light emitting device and its producing method
CN1551686A (en) * 2003-05-08 2004-12-01 ������������ʽ���� Organic Electroluminescent Display Device
CN1812119A (en) * 2004-12-14 2006-08-02 三星Sdi株式会社 Organic light emitting display with auxiliary electrode line and method of fabricating the same

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