CN101714372A - Method for realizing optical recording and electrical reading of information and its element structure - Google Patents
Method for realizing optical recording and electrical reading of information and its element structure Download PDFInfo
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- CN101714372A CN101714372A CN200910199328A CN200910199328A CN101714372A CN 101714372 A CN101714372 A CN 101714372A CN 200910199328 A CN200910199328 A CN 200910199328A CN 200910199328 A CN200910199328 A CN 200910199328A CN 101714372 A CN101714372 A CN 101714372A
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Abstract
一种实现信息光记录和电读出的方法及其元件结构，该方法的特点是激光记录，即利用超短皮秒脉冲激光作用在相变薄膜上形成相变信息点，完成信息的记录；电学读出，即信息读出是利用扫描探针探测相变区域的电阻变化实现。元件结构主要包含透明基底、用作下电极的金属层、用作记录层的相变记录层。本发明结合了超短激光脉冲脉宽窄和相变前后电阻变化巨大的特点，可同时实现快速记录和高信噪比的信号读出。
A method for realizing optical recording and electrical readout of information and its component structure, the characteristics of this method are laser recording, i.e., using ultrashort picosecond pulse laser to form phase change information points on a phase change film to complete information recording; electrical readout, i.e., information readout is realized by using a scanning probe to detect the resistance change in the phase change region. The component structure mainly includes a transparent substrate, a metal layer used as a lower electrode, and a phase change recording layer used as a recording layer. The present invention combines the characteristics of narrow pulse width of ultrashort laser pulses and huge resistance change before and after phase change, and can simultaneously realize fast recording and high signal-to-noise ratio signal readout.
Description
Technical field
The present invention relates to the optoelectronic information field of storage, particularly a kind of method and component structure thereof of realizing information optical recording and electrical readout.This method and structure combines the advantage of phase-change material optical storage and electricity storage, can realize that fast recording and high s/n ratio signal read.
Background technology
The phase change disc memory technology is the information storage technology of a kind of maturation and widespread use.Optical reflectivity difference between phase change disc memory by using phase change memory medium crystalline state and the amorphous state realizes recording of information and reads.Storer developing direction of future generation is the jumbo storer of high density, and in order to improve storage density, reducing the measuring point size is a kind of direct method.But, when recording of information point when surveying hot spot, the reading signal to noise ratio (S/N ratio) and will reduce until can't read output signal of signal.With respect to the reflectance varies between crystalline state and the amorphous structure (being generally less than 30%), the resistance variations of two kinds of structures is very big.In general the highest variation of crystalline state and amorphous state resistance with 4～6 orders of magnitude.So the method for reading of utilizing electricity can improve the signal to noise ratio (S/N ratio) of read output signal greatly.
At present, phase change disc and just in the phase change random access memory devices of conceptual phase, it is tens of to hundreds of nanosecond that the laser that the induced transformation material structure changes or the width of electric pulse are generally.Result of study shows in the GeTe phase-change material recently, the quick reversible transition that has realized the electric pulse driving of 1 nanosecond is (referring to document G Bruns, P Merkelbach, C Schlockerman et.al., Nanosecond switching in GeTe phase change memory cells.Appl.Phys.Lett.95 (2009) 043108), this is expected to the writing speed of the information that improves.But the access time of this information remains nano-seconds.Utilize ultrashort laser pulse [psec (being 10-12 second) magnitude or shorter] to change (referring to document C N Afonso by the induced transformation material structure, J Solis F Catalina et.al., but also have the little advantage of thermal diffusion simultaneously Ultrafast reversible phasechange in GeSb films for erasable optical storage.Appl.Phys.Lett.60 (1992) 3123).But the picosecond laser induced transformation also is not applied to the phase change memory technology at present.In view of separately advantage and deficiency in phase transformation optical storage and the storage of power transformation mutually, optical recording/electrical readout scheme is expected to bring into play both advantages, improves the speed of storage and the signal to noise ratio (S/N ratio) of read output signal simultaneously.
Summary of the invention
The objective of the invention is to overcome in the present phase transformation optical storage that to detect tiny area reflectance varies signal to noise ratio (S/N ratio) low and to write down pulsewidth in the power transformation storage mutually long, speed waits shortcoming slowly, and a kind of method and component structure thereof of realizing information optical recording and electrical readout is provided.This method combines the ultrashort laser pulse fast recording and electricity is read the high advantage of signal to noise ratio (S/N ratio).Utilize component structure of the present invention not only can realize the ultrashort laser pulse fast recording easily, can realize that also the electricity of high s/n ratio signal is read.
Solution of the present invention is:
A kind of method that realizes information optical recording and electrical readout, its characteristics are: in recording process, utilize ultrashort picosecond pulse laser to shine on the phase change recording layers, induce this phase change recording layers to undergo phase transition, form the phase-change recording point; Utilize conducting probe to survey the contrast of the resistance of the resistance of described phase-change recording point and non-phase change zone, realize reading of information measuring point.
A kind of component structure that is applicable to the method for above-mentioned realization information optical recording and electrical readout, its characteristics be to comprise successively discoid transparent substrate, as the metal level of bottom electrode, as the phase change recording layers of recording layer.
Described substrate is glass or makrolon material, and thickness is the 0.6-1.2 millimeter.
Described metal level is Ag or Cu or Au or Al material, utilizes the magnetron sputtering method preparation to be deposited in the described substrate, and thickness is the 10-200 nanometer.
Described phase change recording layers is SiSb or SiSbTe or AgInSbTe or GeSbTe phase change medium material, utilizes the magnetron sputtering method of penetrating to be deposited on the described metal level, and its thickness is the 10-200 nanometer.
Described conducting probe is made up of conduction good metal or alloy (rust steel or W or WC or Pt/I).
Technique effect of the present invention:
1, the present invention utilizes picosecond laser pulse induced transformation recording layer to undergo phase transition, and forms the phase-change recording point, can improve the speed of record.
2, the present invention utilizes resistance (electric current) the signal greatest differences that detects phase-change recording point and non-phase change region to realize reading, and can improve and read high s/n ratio.
3, various material of the present invention is for being widely used in the material of phase change disc storage or scanning probe microscopy now.Structure fabrication technology is simple, cost is low.
Description of drawings
Fig. 1 is optical recording and the electrical readout method principle schematic that the present invention realizes information
Fig. 2 is the measuring point that realizes of the present invention and the I-V curve of non-posting field.
Embodiment
The invention will be further described below in conjunction with embodiment and accompanying drawing, but should not limit protection scope of the present invention with this.
See also Fig. 1, Fig. 1 is a principle schematic of the present invention.Picosecond laser pulse 4 focuses on the back through condenser lens 5 and affacts on the phase change recording layers 2 by substrate 1 and conductive metal layer 6, forms the phase-change recording point.Laser action NOR-function zone in the probe 3 contact phase change recording layers 2.7 is conducting atomic force microscopy.In recording process, utilize ultrashort laser pulse and phase change recording layers 2 effects, thereby realize the rapid phase transition record; In readout, utilize probe 3 contact phase change recording layers 2 to survey the greatest differences of described phase-change recording point and non-phase change region resistance, the realization high s/n ratio is read.
Laser can not act directly on the phase change recording layers 2 by substrate 1 and metal level 6 from the sample top yet in the present embodiment, and its record and readout are same as described above.
The present invention realizes the component structure of the optical recording and the electrical readout of information.In conjunction with Fig. 1, substrate 1 is glass or polycarbonate disc base, and thickness is 0.1～1.2mm.Phase change recording layers 2 is that phase change memory medium (as SiSb or SiSbTe or AgInSbTe or GeSbTe etc.) is formed, and is made by the magnetron sputtering method deposition, and its thickness is generally 10～200 nanometers.Conductive metal layer 6 is made up of the metal with satisfactory electrical conductivity (as Ag or Cu or Au or Al etc.), is made by the magnetron sputtering method deposition, and its thickness is generally 10～200 nanometers.Conducting probe 3 is made up of the metal or alloy with satisfactory electrical conductivity (as stainless steel or gold or silver or tungsten or tungsten carbide or platinumiridio etc.).
Fig. 2 has provided and has utilized the picosecond laser pulse induced transformation measuring point (curve 1) that the present invention realizes and the I-V curve contrast (the I-V slope of a curve is a resistance) of non-phase change region (curve 2).Adopting the thick AgInSbTe of 200nm is phase change recording layers, and adopting the thick Ag metal level 6 of 100nm is bottom electrode, and adopting the thick glass sheet of 0.6mm is substrate 1, and adopting the Pt/Ir probe is top electrode 3.The recording impulse width is about 30 psecs, and the ratio of the resistance of transformation temperature that forms and non-phase change zone has the high signal to noise ratio (S/N ratio) of reading above 70 times.
Claims (5)
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015159065A1 (en) * | 2014-04-14 | 2015-10-22 | Pragmatic Printing Ltd | Electronic circuit and data storage system |
| CN107017342A (en) * | 2017-04-11 | 2017-08-04 | 北京工业大学 | A kind of method of the ultrashort pulse picosecond laser induced phase transition materials film crystallization of use different wave length |
| CN113655312A (en) * | 2021-08-09 | 2021-11-16 | 苏州科技大学 | Photoelectric hybrid phase change memory test system and method |
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2009
- 2009-11-25 CN CN200910199328A patent/CN101714372A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015159065A1 (en) * | 2014-04-14 | 2015-10-22 | Pragmatic Printing Ltd | Electronic circuit and data storage system |
| US10204683B2 (en) | 2014-04-14 | 2019-02-12 | Pragmatic Printing Ltd. | Electronic circuit and data storage system |
| US10622068B2 (en) | 2014-04-14 | 2020-04-14 | Pragmatic Printing Ltd | Electronic circuit and data storage system |
| CN107017342A (en) * | 2017-04-11 | 2017-08-04 | 北京工业大学 | A kind of method of the ultrashort pulse picosecond laser induced phase transition materials film crystallization of use different wave length |
| CN113655312A (en) * | 2021-08-09 | 2021-11-16 | 苏州科技大学 | Photoelectric hybrid phase change memory test system and method |
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Open date: 20100526 |