CN101673865B - Balun Fabricated Using Integrated Passive Components Process - Google Patents
Balun Fabricated Using Integrated Passive Components Process Download PDFInfo
- Publication number
- CN101673865B CN101673865B CN200910132445.4A CN200910132445A CN101673865B CN 101673865 B CN101673865 B CN 101673865B CN 200910132445 A CN200910132445 A CN 200910132445A CN 101673865 B CN101673865 B CN 101673865B
- Authority
- CN
- China
- Prior art keywords
- coils
- coil
- balun
- electrically connected
- spiral structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 18
- 230000008569 process Effects 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000003990 capacitor Substances 0.000 claims description 10
- 238000010586 diagram Methods 0.000 description 12
- 230000005540 biological transmission Effects 0.000 description 10
- 230000008901 benefit Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- 238000003780 insertion Methods 0.000 description 5
- 230000037431 insertion Effects 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000001808 coupling effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Coils Or Transformers For Communication (AREA)
- Filters And Equalizers (AREA)
Abstract
Description
技术领域 technical field
本发明是有关于一种巴伦器(Balun circuit),且特别是有关于一种使用整合被动组件(Integrated Passive Device,IPD)工艺制造的巴伦器。The present invention relates to a balun circuit, and more particularly to a balun circuit manufactured using an Integrated Passive Device (IPD) process.
背景技术 Background technique
一般来说,当通讯装置中的天线接收到无线信号之后,由天线输出的单端口电信号会输出至一巴伦器。巴伦器将会把单端口电信号转换成双端口电信号,并输出至射频(Radio Frequency,RF)收发器(Transceiver)来进行处理。Generally speaking, when the antenna in the communication device receives the wireless signal, the single-port electrical signal output by the antenna is output to a balun. The balun will convert the single-port electrical signal into a dual-port electrical signal, and output it to a radio frequency (Radio Frequency, RF) transceiver (Transceiver) for processing.
目前的一种巴伦器以低温共烧陶瓷(Low temperature co-fired ceramic,LTCC)工艺来达成。然而,这种LTCC工艺所制造的巴伦器必需先经由表面黏着技术(Surface-Mount Technology,SMT)与一基材电性连接后,才能与基材上的射频收发器芯片电性连接。如此,基材上必需同时保留配置LTCC工艺所制造的巴伦器的区域与配置射频收发器芯片的区域,而使得所需要的基材面积增大,而占用较大的通讯装置的空间。因此,如何降低所需基材的面积,以节省通讯装置的内部空间,乃业界所致力的方向之一。A current balun is achieved by a low temperature co-fired ceramic (LTCC) process. However, the balun manufactured by this LTCC process must first be electrically connected to a substrate by Surface-Mount Technology (SMT) before it can be electrically connected to the RF transceiver chip on the substrate. In this way, the area for configuring the balun produced by the LTCC process and the area for configuring the radio frequency transceiver chip must be reserved on the base material at the same time, so that the required area of the base material increases and occupies a larger space of the communication device. Therefore, how to reduce the area of the required substrate to save the internal space of the communication device is one of the directions that the industry is working on.
发明内容 Contents of the invention
本发明有关于一种使用整合被动组件工艺制造的巴伦器,可以直接配置于射频收发器芯片上,故可降低所需要的基材面积,而得以节省通讯装置的内部空间。The invention relates to a balun manufactured by an integrated passive component process, which can be directly configured on a radio frequency transceiver chip, thereby reducing the required substrate area and saving the internal space of the communication device.
根据本发明,提出一种使用整合被动组件(Integrated Passive Device,IPD)工艺制造的巴伦器,包括一基板、一第一共平面螺旋结构体及一第二共平面螺旋结构体。第一共平面螺旋结构体具有一第一端、一第二端、多个第一左线圈、多个第一右线圈及一第一桥接部。最内圈的第一左线圈的一端经由第一桥接部与最内圈的第一右线圈电性连接。第一端与最外圈的第一左线圈电性连接,第二端与最外圈的第一右线圈电性连接。第二共平面螺旋结构体具有一第三端、一第四端、多个第二左线圈、多个第二右线圈及一第二桥接部。最内圈的第二左线圈的一端经由第二桥接部与最内圈的第二右线圈电性连接。第三端与最外圈的第二左线圈电性连接,第四端与最外圈的第二右线圈电性连接。这些第一左线圈与这些第二左线圈交错配置,这些第一右线圈与这些第二右线圈交错配置。According to the present invention, a balun manufactured using an Integrated Passive Device (IPD) process is proposed, including a substrate, a first coplanar helical structure and a second coplanar helical structure. The first coplanar spiral structure has a first end, a second end, a plurality of first left coils, a plurality of first right coils and a first bridging portion. One end of the innermost first left coil is electrically connected to the innermost first right coil via the first bridging portion. The first end is electrically connected to the first left coil of the outermost circle, and the second end is electrically connected to the first right coil of the outermost circle. The second coplanar spiral structure has a third end, a fourth end, a plurality of second left coils, a plurality of second right coils and a second bridging portion. One end of the innermost second left coil is electrically connected to the innermost second right coil via the second bridging portion. The third end is electrically connected to the second left coil of the outermost circle, and the fourth end is electrically connected to the second right coil of the outermost circle. The first left coils are alternately arranged with the second left coils, and the first right coils are alternately arranged with the second right coils.
为让本发明的上述内容能更明显易懂,下文特举较佳实施例,并配合附图,作详细说明如下:In order to make the above-mentioned content of the present invention more obvious and understandable, the preferred embodiments are specifically cited below, together with the accompanying drawings, and are described in detail as follows:
附图说明 Description of drawings
图1绘示乃一种巴伦器的示意图。FIG. 1 is a schematic diagram of a balun.
图2绘示乃图1的巴伦器的等效电路图。FIG. 2 is an equivalent circuit diagram of the balun shown in FIG. 1 .
图3A绘示乃依照本发明的一实施例的一种使用整合被动组件工艺制造的巴伦器的结构示意图。FIG. 3A is a schematic structural diagram of a balun manufactured using an integrated passive device process according to an embodiment of the present invention.
图3B乃图3A中,沿着剖面线3B-3B’的巴伦器的剖面图。Fig. 3B is a cross-sectional view of the balun along the
图4A绘示乃具有本实施例的巴伦器的结构的IPD与射频收发器芯片的配置关系的一例的示意图。FIG. 4A is a schematic diagram showing an example of the configuration relationship between the IPD and the radio frequency transceiver chip having the structure of the balun in this embodiment.
图4B绘示乃具有本实施例的巴伦器的结构的IPD与射频收发器芯片的配置关系的另一例的示意图。FIG. 4B is a schematic diagram showing another example of the configuration relationship between the IPD and the radio frequency transceiver chip having the structure of the balun in this embodiment.
图5绘示乃本实施例的巴伦器的反射损失与插入损失的仿真结果图。FIG. 5 is a graph showing the simulation results of reflection loss and insertion loss of the balun of this embodiment.
图6绘示乃本实施例的巴伦器的两个输出信号的振幅差与相位差的仿真结果图。FIG. 6 is a graph showing the simulation results of the amplitude difference and phase difference of two output signals of the balun of this embodiment.
主要组件符号说明:Description of main component symbols:
100:巴伦器100: Balun
102、104:传输线102, 104: transmission line
110:非平衡端口110: unbalanced port
112、114:平衡端口112, 114: balanced ports
300:巴伦器300: Balun
302:基板302: Substrate
312:第一端312: first end
314:第二端314: second end
316:第一连接线316: The first connecting line
318:第二连接线318: Second connection line
320(1)、320(2)、320(3):第一左线圈320(1), 320(2), 320(3): first left coil
322(1)、322(2)、322(3):第一右线圈322(1), 322(2), 322(3): First right coil
324:第一桥接部324: The first bridging department
332:第三端332: third end
334:第四端334: Fourth end
336:第三连接线336: The third connecting line
338:第四连接线338: The fourth connecting line
340(1)、340(2)、340(3):第二左线圈340(1), 340(2), 340(3): second left coil
342(1)、342(2)、342(3):第二右线圈342(1), 342(2), 342(3): Second right coil
344:第二桥接部344: Second bridging part
352:第一布线层352: The first wiring layer
354:第二布线层354: Second wiring layer
402、408:整合被动组件402, 408: Integrate passive components
404、410:射频收发器芯片404, 410: RF transceiver chip
406、412:基材406, 412: Substrate
602、604:关系曲线602, 604: relationship curve
具体实施方式 Detailed ways
请参照图1,其绘示乃一种巴伦器的示意图。巴伦器包括传输线102及104、与电容器C1、C2及C3。传输线102的一端与一非平衡端口(Unbalance Port)110电性连接,传输线102的另一端接地。传输线104的一端与平衡端口(BalancePort)112和电容C2电性连接,而传输线104的另一端与平衡端口114和电容C3电性连接。Please refer to FIG. 1 , which shows a schematic diagram of a balun. The balun includes
请参照图2,其绘示乃图1的巴伦器的等效电路图。传输线102可由电感L1等效之,传输线104可由电感L2等效之。由于对于交流信号而言,传输线104之中点可视为虚拟接地,故等效传输线104的电感L2的中心以接地等效之。经由电感L1与L2之间的耦合效应,可使得由非平衡端口110输入的单端(single ended)信号,转换成由平衡端口112与114输出的差动(differential)信号。平衡端口112与114输出的信号具有实质上相同的振幅,但两个信号的相位实质上相差180度。Please refer to FIG. 2 , which shows an equivalent circuit diagram of the balun in FIG. 1 . The
上述的电容C1、C2及C3用以调整通带(Passband)的频宽(Bandwidth),调整插入损失(Insertion Loss),或执行阻抗转换(Impedance Transformation)。The above capacitors C1, C2 and C3 are used to adjust the bandwidth of the passband, adjust the insertion loss, or perform impedance transformation.
请同时参照图3A及图3B,图3A绘示乃依照本发明的一实施例的一种使用整合被动组件(Integrated Passive Device,IPD)工艺制造的巴伦器的结构示意图,图3B乃图3A中,沿着剖面线3B-3B’的巴伦器300的剖面图。巴伦器300包括一基板302(绘示于图3B中),一第一共平面螺旋结构体、及一第二共平面螺旋结构体。第一共平面螺旋结构体具有一第一端312、一第二端314、多个第一左线圈、多个第一右线圈及一第一桥接部324。Please refer to FIG. 3A and FIG. 3B at the same time. FIG. 3A is a schematic structural diagram of a balun manufactured using an integrated passive device (Integrated Passive Device, IPD) process according to an embodiment of the present invention, and FIG. 3B is a schematic diagram of FIG. 3A , a cross-sectional view of the
多个第一左线圈例如包括左线圈320(1)、320(2)及320(3)。多个第一右线圈例如包括右线圈322(1)、322(2)及322(3)。The plurality of first left coils include, for example, left coils 320(1), 320(2) and 320(3). The plurality of first right coils include, for example, right coils 322(1), 322(2) and 322(3).
于第一共平面螺旋结构体中,最内圈的第一左线圈320(3)的一端经由第一桥接部324与最内圈的第一右线圈322(3)电性连接。第一端312与最外圈的第一左线圈320(1)电性连接,第二端314与最外圈的第一右线圈322(1)电性连接。In the first coplanar spiral structure, one end of the innermost first left coil 320 ( 3 ) is electrically connected to the innermost first right coil 322 ( 3 ) via the
而第二共平面螺旋结构体则具有一第三端332、一第四端334、多个第二左线圈、多个第二右线圈及一第二桥接部344。多个第二左线圈例如包括第二左线圈340(1)、340(2)及340(3)。多个第二右线圈例如包括第二右线圈342(1)、342(2)及342(3)。The second coplanar spiral structure has a
于第二共平面螺旋结构体中,最内圈的第二左线圈340(3)的一端经由第二桥接部344与最内圈的第二右线圈342(3)电性连接。第三端332与最外圈的第二左线圈340(1)电性连接,第四端334与最外圈的第二右线圈342(1)电性连接。In the second coplanar spiral structure, one end of the innermost second left coil 340 ( 3 ) is electrically connected to the innermost second right coil 342 ( 3 ) via the
这些第一左线圈与些第二左线圈交错配置,这些第一右线圈与些第二右线圈交错配置。举例来说,这些第一左线圈与这些第二左线圈以第二左线圈340(1)、第一左线圈320(1)、第二左线圈340(2)、第一左线圈320(2)、第二左线圈340(3)、第一左线圈320(3)的顺序由外向内配置。而这些第一右线圈与这些第二右线圈以第二右线圈342(1)、第一右线圈322(1)、第二右线圈342(2)、第一右线圈322(2)、第二右线圈342(3)、第一右线圈322(3)的顺序由外向内配置。The first left coils are interlaced with the second left coils, and the first right coils are interlaced with the second right coils. For example, the first left coils and the second left coils are represented by the second left coil 340(1), the first left coil 320(1), the second left coil 340(2), the first left coil 320(2 ), the second left coil 340(3), and the first left coil 320(3) are arranged from outside to inside. These first right coils and these second right coils are represented by the second right coil 342(1), the first right coil 322(1), the second right coil 342(2), the first right coil 322(2), the The order of the second right coil 342(3) and the first right coil 322(3) is arranged from outside to inside.
较佳地,第一左线圈320(1)~320(3)与第二左线圈340(1)~340(3)等间隔配置。第一右线圈322(1)~322(3)与第二右线圈342(1)~342(3)等间隔配置。而第一端312通过连接线316与最外圈的第一左线圈320(1)电性连接,第二端314通过连接线318与最外圈的第一右线圈322(1)电性连接。第三端332通过连接线336与最外圈的第二左线圈340(1)电性连接,第四端334通过连接线338与最外圈的第二右线圈342(1)电性连接。Preferably, the first left coils 320(1)-320(3) and the second left coils 340(1)-340(3) are arranged at equal intervals. The first right coils 322(1) to 322(3) and the second right coils 342(1) to 342(3) are arranged at equal intervals. The
更进一步来说,请参考图3B,基板302具有一第一布线层352与一第二布线层354。于第一共平面螺旋结构体中,第一连接线316、第二连接线318、这些第一左线圈320(1)~320(3)及这些第一右线圈340(1)~340(3)配置于第一布线层352,而第一桥接部324则配置于第二布线层354。第一左线圈320(3)例如通过通孔360与第一桥接部324电性连接,而第一桥接部324则通过通孔362与第一右线圈322(3)电性连接。如此,可使得第一左线圈320(3)经由第一桥接部324与第一右线圈322(3)电性连接。Furthermore, please refer to FIG. 3B , the
而于第二共平面螺旋结构体中,第一连接线336、第二连接线338、第二左线圈340(1)~340(3)、第二右线圈342(1)~342(3)配置于第一布线层352。第二桥接部344配置于第二布线层354。In the second coplanar spiral structure, the first connecting
较佳地,第一左线圈320(1)~320(3)的长度和实质上等于第一右线圈322(1)~322(3)的长度和。而第二左线圈340(1)~340(3)的长度和实质上等于第二右线圈342(1)~342(3)的长度和。如此,当第一端312作为非平衡端口110,第二端314接地,第三端332与第四端334分别作为平衡端口112与114时,第三端332与第四端334将可输出具有实质上相同的振幅,相位实质上相差180度的两个信号。Preferably, the sum of the lengths of the first left coils 320(1)-320(3) is substantially equal to the sum of the lengths of the first right coils 322(1)-322(3). The sum of the lengths of the second left coils 340(1)-340(3) is substantially equal to the sum of the lengths of the second right coils 342(1)-342(3). In this way, when the
如图3A所示,第一端312、第三端332及第四端334分别与电容C1、C2及C3电性连接。As shown in FIG. 3A , the
于本实施例的巴伦器300中,第一共平面螺旋结构体及第二共平面螺旋结构体之间的耦合方式以边缘耦合(edge coupling)的方式来达成。此种方式可以使得耦合机制较不受到外部的参考地电压的影响,而可达到较良好的耦合效果。In the
此外,由于本实施例的巴伦器仅需用到两个布线层,所以特别适合于使用IPD工艺来制造,亦即是使用薄膜(Thin Film)工艺来制造。使用IPD工艺所制造的巴伦器具有线圈的线宽与线距可精准控制,且可使得线宽与线距比传统使用LTCC工艺所制造的巴伦器的线宽与线距还小的优点。因此,相较于LTCC工艺所制造的巴伦器,本实施例的IPD工艺所制造的巴伦器更具有缩小布局(Layout)面积的优点。In addition, since the balun of this embodiment only needs two wiring layers, it is particularly suitable for manufacturing by IPD technology, that is, it is manufactured by thin film technology. The balun manufactured by the IPD process has the advantages that the line width and line spacing of the coil can be precisely controlled, and the line width and line spacing can be made smaller than the line width and line spacing of the traditional LTCC process. . Therefore, compared with the balun manufactured by the LTCC process, the balun manufactured by the IPD process of this embodiment has the advantage of reducing the layout area.
请参照图4A,其绘示乃具有本实施例的巴伦器300的结构的IPD 402与射频收发器芯片404的配置关系的一例的示意图。IPD 402配置于基材406上,而射频收发器芯片404则可配置于IPD 402上。而射频收发器芯片404则例如通过IPD402中的多个通孔(via)405与基材406电性连接。如此,与传统的LTCC工艺所制造的巴伦器必需直接配置于基材上以与配置于基材的其它区域的射频收发器芯片电性连接的作法相较,本实施例的IPD 402可达到节省基材406面积的优点。Please refer to FIG. 4A , which is a schematic diagram showing an example of the configuration relationship between the
请参照图4B,其绘示乃具有本实施例的巴伦器的结构的IPD 408与射频收发器芯片410的配置关系的另一例的示意图。IPD 408配置于基材412上,而射频收发器芯片410则可配置于IPD 408下方的空间中。此种配置方式同样地具有节省基材412面积的优点。Please refer to FIG. 4B , which shows a schematic diagram of another example of the configuration relationship between the
请参照图5,其绘示乃本实施例的巴伦器的反射损失(Return Loss)与插入损失(Insertion loss)的仿真结果图。兹将做为非平衡端口110的第一端312作为输入端口,做为平衡端口112与114的第三端332与第四端334则作为输出端口,来进行双端口巴伦器的仿真。由图5的反射损失的关系曲线502与插入损失的关系曲线504可看出,于频率2.5GHz附近,反射损失约为-42dB,而插入损失则约为-1dB。由此可看出于频率2.5GHz附近,本实施例的巴伦器300确实可以完成信号转换的动作。Please refer to FIG. 5 , which shows the simulation results of the return loss and insertion loss of the balun of this embodiment. The
请参照图6,其绘示乃本实施例的巴伦器的两个输出信号的振幅差(Amplitude imbalance)与相位差(Phase imbalance)的仿真结果图。由第三端332与第四端334的输出信号的振幅差的关系曲线602可看出,二者的振幅差于频率2GHz至3GHz之间介于0.25与-0.37之间。而由第三端332与第四端334的输出信号的相位差的关系曲线604可看出,二者的相位差则约为182.5度(degree)。由此可知,本实施例的巴伦器确实可以符合一般巴伦器的两输出信号振幅实质上相同,相位差实质上为180度的要求。Please refer to FIG. 6 , which shows a simulation result diagram of the amplitude difference (Amplitude imbalance) and the phase difference (Phase imbalance) of the two output signals of the balun of this embodiment. From the
上述虽以具有电容C1、C2及C3的巴伦器100为例做说明,然巴伦器100亦可不需使用电容C1、C2及C3。Although the
本发明的使用IPD工艺制造的巴伦器可以达到缩小布局面积及节省基材的面积的优点,可使得所使用的通讯装置更能达到轻薄短小的目的,故具有良好的市场竞争力。The balun manufactured by using the IPD process of the present invention can achieve the advantages of reducing the layout area and saving the area of the substrate, and can make the communication device used more light, thin and short, so it has good market competitiveness.
综上所述,虽然本发明已以较佳实施例揭露如上,然其并非用以限定本发明。本发明所属技术领域中具有通常知识者,在不脱离本发明的精神和范围内,当可作各种的更动与润饰。因此,本发明的保护范围当视后附的权利要求书所界定者为准。To sum up, although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Those skilled in the art of the present invention can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be defined by the appended claims.
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13650408P | 2008-09-10 | 2008-09-10 | |
US61/136,504 | 2008-09-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101673865A CN101673865A (en) | 2010-03-17 |
CN101673865B true CN101673865B (en) | 2014-02-19 |
Family
ID=42020783
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009101324562A Active CN101673618B (en) | 2008-09-10 | 2009-03-26 | Dual Inductor Structure |
CN200910132444XA Active CN101674060B (en) | 2008-09-10 | 2009-03-27 | Balun |
CN 200910132443 Active CN101673864B (en) | 2008-09-10 | 2009-03-27 | Balun Fabricated Using Integrated Passive Components Process |
CN200910132445.4A Active CN101673865B (en) | 2008-09-10 | 2009-03-27 | Balun Fabricated Using Integrated Passive Components Process |
Family Applications Before (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009101324562A Active CN101673618B (en) | 2008-09-10 | 2009-03-26 | Dual Inductor Structure |
CN200910132444XA Active CN101674060B (en) | 2008-09-10 | 2009-03-27 | Balun |
CN 200910132443 Active CN101673864B (en) | 2008-09-10 | 2009-03-27 | Balun Fabricated Using Integrated Passive Components Process |
Country Status (2)
Country | Link |
---|---|
CN (4) | CN101673618B (en) |
TW (4) | TWI360254B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107731485A (en) * | 2016-08-12 | 2018-02-23 | 瑞昱半导体股份有限公司 | Semiconductor device with a plurality of semiconductor chips |
CN110034368A (en) * | 2019-04-24 | 2019-07-19 | 南京理工大学 | LTCC modified delamination helix formula balun power splitter |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8791775B2 (en) * | 2010-03-30 | 2014-07-29 | Stats Chippac, Ltd. | Semiconductor device and method of forming high-attenuation balanced band-pass filter |
US9312060B2 (en) * | 2012-09-20 | 2016-04-12 | Marvell World Trade Ltd. | Transformer circuits having transformers with figure eight and double figure eight nested structures |
US9431473B2 (en) * | 2012-11-21 | 2016-08-30 | Qualcomm Incorporated | Hybrid transformer structure on semiconductor devices |
CN103078161B (en) * | 2012-12-17 | 2015-03-04 | 江苏大学 | Marchand balun provided with center tap and used for providing direct-current bias |
US10002700B2 (en) | 2013-02-27 | 2018-06-19 | Qualcomm Incorporated | Vertical-coupling transformer with an air-gap structure |
US9634645B2 (en) | 2013-03-14 | 2017-04-25 | Qualcomm Incorporated | Integration of a replica circuit and a transformer above a dielectric substrate |
CN103337682B (en) * | 2013-07-24 | 2015-03-25 | 东南大学 | Broadband, low-loss and high-balance-degree on-chip Balun |
US9449753B2 (en) | 2013-08-30 | 2016-09-20 | Qualcomm Incorporated | Varying thickness inductor |
CN103606726B (en) * | 2013-11-27 | 2016-06-08 | 东南大学 | A kind of wide-band transformer Ba Lun with center open stub |
TWI549425B (en) * | 2014-04-07 | 2016-09-11 | 國立臺灣科技大學 | Balun device |
TWI545893B (en) | 2014-04-07 | 2016-08-11 | 國立臺灣科技大學 | Balun device |
US9906318B2 (en) | 2014-04-18 | 2018-02-27 | Qualcomm Incorporated | Frequency multiplexer |
US20170243690A1 (en) * | 2016-02-22 | 2017-08-24 | Mediatek Inc. | Composite inductor structure |
TWI627644B (en) | 2016-08-05 | 2018-06-21 | 瑞昱半導體股份有限公司 | Semiconductor component |
TWI612697B (en) | 2016-08-05 | 2018-01-21 | 瑞昱半導體股份有限公司 | Semiconductor component |
TWI632657B (en) | 2016-08-05 | 2018-08-11 | 瑞昱半導體股份有限公司 | Semiconductor component |
CN116566329A (en) * | 2022-01-27 | 2023-08-08 | 锐石创芯(深圳)科技股份有限公司 | Balun, radio frequency front end chip and radio frequency front end module |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6097273A (en) * | 1999-08-04 | 2000-08-01 | Lucent Technologies Inc. | Thin-film monolithic coupled spiral balun transformer |
US7187179B1 (en) * | 2005-10-19 | 2007-03-06 | International Business Machines Corporation | Wiring test structures for determining open and short circuits in semiconductor devices |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1180444A (en) * | 1995-04-05 | 1998-04-29 | 齐罗发射技术公司 | Two-stage high voltage inductor |
US6714113B1 (en) * | 2000-11-14 | 2004-03-30 | International Business Machines Corporation | Inductor for integrated circuits |
CN1240084C (en) * | 2002-01-18 | 2006-02-01 | 达方电子股份有限公司 | High Quality Factor Inductors |
DE102005046451B4 (en) * | 2005-09-28 | 2021-02-25 | Snaptrack, Inc. | Circuit and component with the circuit |
US7176776B1 (en) * | 2006-05-04 | 2007-02-13 | Delphi Technologies, Inc. | Multi-layer RF filter and balun |
CN201017976Y (en) * | 2007-03-20 | 2008-02-06 | 浙江大学 | A Broadband Balun Based on Left and Right Handed Composite Transmission Lines |
-
2008
- 2008-12-08 TW TW97147734A patent/TWI360254B/en active
- 2008-12-09 TW TW097147869A patent/TWI368352B/en active
-
2009
- 2009-02-10 TW TW098104245A patent/TWI366982B/en active
- 2009-02-11 TW TW098104390A patent/TWI365463B/en active
- 2009-03-26 CN CN2009101324562A patent/CN101673618B/en active Active
- 2009-03-27 CN CN200910132444XA patent/CN101674060B/en active Active
- 2009-03-27 CN CN 200910132443 patent/CN101673864B/en active Active
- 2009-03-27 CN CN200910132445.4A patent/CN101673865B/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6097273A (en) * | 1999-08-04 | 2000-08-01 | Lucent Technologies Inc. | Thin-film monolithic coupled spiral balun transformer |
US7187179B1 (en) * | 2005-10-19 | 2007-03-06 | International Business Machines Corporation | Wiring test structures for determining open and short circuits in semiconductor devices |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107731485A (en) * | 2016-08-12 | 2018-02-23 | 瑞昱半导体股份有限公司 | Semiconductor device with a plurality of semiconductor chips |
CN107731485B (en) * | 2016-08-12 | 2020-08-18 | 瑞昱半导体股份有限公司 | Semiconductor device with a plurality of semiconductor chips |
CN110034368A (en) * | 2019-04-24 | 2019-07-19 | 南京理工大学 | LTCC modified delamination helix formula balun power splitter |
Also Published As
Publication number | Publication date |
---|---|
CN101673618B (en) | 2012-01-25 |
TW201011972A (en) | 2010-03-16 |
TW201011785A (en) | 2010-03-16 |
CN101673864A (en) | 2010-03-17 |
CN101674060B (en) | 2012-04-18 |
CN101673864B (en) | 2013-07-17 |
TWI365463B (en) | 2012-06-01 |
TWI366982B (en) | 2012-06-21 |
TWI360254B (en) | 2012-03-11 |
CN101673865A (en) | 2010-03-17 |
TWI368352B (en) | 2012-07-11 |
TW201011973A (en) | 2010-03-16 |
CN101674060A (en) | 2010-03-17 |
CN101673618A (en) | 2010-03-17 |
TW201012059A (en) | 2010-03-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101673865B (en) | Balun Fabricated Using Integrated Passive Components Process | |
US8049589B2 (en) | Balun circuit manufactured by integrate passive device process | |
CN100525094C (en) | Balun converter | |
US7511591B2 (en) | Setting of the impedance ratio of a balun | |
JP2003087008A (en) | Multilayer dielectric filter | |
JP5051063B2 (en) | Thin film balun | |
KR20020095191A (en) | Integrated broadside coupled transmission line element | |
US8008987B2 (en) | Balun circuit manufactured by integrate passive device process | |
JP2008113432A (en) | Multi-layered band pass filter | |
WO2022131113A1 (en) | Chip-type electronic component | |
JP2010050610A (en) | Thin-film balun | |
CN114679149A (en) | A N77 Bandpass Filter Based on IPD Technology | |
JP2000022404A (en) | Laminated dielectric filter and high frequency circuit board | |
CN100442507C (en) | Symmetrical inductance element | |
CN101278435A (en) | passive components | |
CN110380689B (en) | Passive balun on silicon substrate with side edge coupled winding structure | |
JP2016225399A (en) | Multilayer electronic components | |
US7782157B2 (en) | Resonant circuit, filter circuit, and multilayered substrate | |
CN205792477U (en) | Low-pass filter with broadband suppression capability | |
CN106330126A (en) | Antistatic band-pass filtering integrated circuit | |
JP2008054174A (en) | 90-degree hybrid circuit | |
JPH1197962A (en) | High-frequency component | |
JP3207413U (en) | Low-pass filter with stopband noise suppression | |
US20240283422A1 (en) | Filter, integrated passive device, electronic device and display device | |
CN108347229A (en) | A kind of LTCC orthogonal type couplers with high-performance capacitor, inductance |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |