CN101673787B - Semiconductor light emitting device and packaging structure thereof - Google Patents

Abstract

The invention discloses a semiconductor light-emitting device and a packaging structure thereof. The semiconductor light-emitting device comprises a semiconductor light-emitting element, a transparent adhesive material and a wavelength conversion structure. The primary color light emitted by the semiconductor light emitting element is excited to generate a color-changing light with a wavelength different from that of the primary color light through the wavelength conversion structure.

Description

Semiconductor light emitting device and packaging structure thereof

technical field

The invention relates to a semiconductor light-emitting device and its packaging structure, in particular to a semiconductor light-emitting device with a wavelength conversion structure and a transparent adhesive material and its packaging structure.

Background technique

A light-emitting diode (Light-emitting Diode; LED) is a semiconductor solid-state device that includes at least one p-n junction (p-n junction), which is formed between p-type and n-type semiconductor layers. When a certain degree of bias is applied to the p-n junction, holes in the p-type semiconductor layer and electrons in the n-type semiconductor layer will combine to release light. The region where the light is generated is generally called an active region.

The main features of LEDs are small size, high luminous efficiency, long life, fast response, high reliability and good chromaticity, and have been widely used in electrical appliances, automobiles, signboards and traffic signals. With the advent of full-color LEDs, LEDs have gradually replaced traditional lighting equipment such as fluorescent lamps and incandescent bulbs.

Generally, white light is produced by pairing the bare LED core with a wavelength conversion material (such as phosphor powder). Mixing green or red light produces white light. In order to ensure that the light emitted by the bare LED core can pass through the wavelength conversion material and produce the required light after being mixed, the wavelength conversion material must completely cover the possible light emission of the LED core. However, there is no specific direction in which the light is emitted. If the wavelength conversion material does not completely cover the possible light emission of the LED core, part of the light fails to pass through the wavelength conversion material, such as side-ray light, which will lead to a decrease in the wavelength conversion efficiency of light. reduce. On the other hand, if the wavelength conversion material completely covers the bare LED core, although the efficiency of wavelength conversion can be improved, it will easily cause problems such as difficult heat dissipation.

It is not easy to uniformly cover the wavelength conversion material on the LED die. When the thickness of the wavelength conversion material covering the bare LED core is not uniform, since the thicker wavelength conversion material absorbs more light than the thinner wavelength conversion material, the light emitted in different directions passes through the wavelength conversion material with different thickness The color light excited will be different accordingly.

Contents of the invention

The invention provides a semiconductor light-emitting device, which includes a conductive substrate, a semiconductor light-emitting stack, a transparent adhesive material and a wavelength conversion structure. The primary-color light emitted by the semiconductor light-emitting stack passes through the transparent adhesive material and is converted by the wavelength conversion structure to produce color-changing light with a wavelength different from that of the primary-color light. In addition, at least one reflective layer is included between the conductive substrate and the semiconductor light emitting stack.

The invention provides a semiconductor light-emitting device, which includes a conductive substrate, a semiconductor light-emitting stack, a transparent adhesive material, and a wavelength conversion material uniformly distributed in the transparent adhesive material. The primary color light emitted by the semiconductor light-emitting stack passes through the wavelength conversion material to produce color-changing light with a wavelength different from that of the primary color light. In addition, at least one reflective layer is included between the conductive substrate and the semiconductor light emitting stack.

The invention provides a semiconductor light-emitting device, which includes a conductive substrate, a semiconductor light-emitting stack, a transparent adhesive material, and a wavelength conversion structure existing in the transparent adhesive material. The primary color light emitted by the semiconductor light-emitting stack passes through the transparent adhesive material and is converted by the wavelength conversion structure to produce color-changing light with a wavelength different from that of the primary color light. In addition, at least one reflective layer is included between the conductive substrate and the semiconductor light emitting stack.

The invention provides a packaging structure of a semiconductor light-emitting device, which includes a semiconductor light-emitting device, a bowl, a packaging bracket, a transparent adhesive material and a wavelength conversion structure. Wherein the semiconductor light-emitting device is placed in the bowl, the bowl is filled with transparent adhesive material, the height of which is at least greater than that of the semiconductor light-emitting device, and then the wavelength conversion structure is arranged on the transparent adhesive material. In addition, at least one wavelength selection film (wavelength selection film, WSF) is included between the transparent adhesive material and the wavelength conversion structure. Finally, an electrical connection is formed between the semiconductor light emitting device and the packaging support.

Description of drawings

1-5 show cross-sectional views of a semiconductor light emitting device 100 according to an embodiment of the present invention.

FIG. 6 is a cross-sectional view of a semiconductor light emitting device 200 according to another embodiment of the present invention.

FIG. 7 is a cross-sectional view of a semiconductor light emitting device 300 according to another embodiment of the present invention.

8A to 8C show cross-sectional views of a semiconductor light emitting device 400 according to another embodiment of the present invention.

FIG. 9 shows a cross-sectional view of a semiconductor light emitting device packaging structure 1 according to an embodiment of the present invention.

FIG. 10 shows a cross-sectional view of a packaging structure 2 of a semiconductor light emitting device according to another embodiment of the present invention.

FIG. 11 shows a cross-sectional view of a packaging structure 3 of a semiconductor light emitting device according to another embodiment of the present invention.

Explanation of reference signs

1, 2, 3 Packaging Design of Semiconductor Light-emitting Devices

11 Conductive substrate

12 Bonding layer

13, 14 Electrodes

15 Transparent adhesive material

16 Wavelength conversion structure

17, 33 Reflecting wall

18 Wavelength selective film

21 Growth Substrate

22 Epitaxial structure

23 The first electrical semiconductor layer

24 Active layer

25 Second electrical semiconductor layer

26 Second electrical contact layer

27 Reflective layer

31 Bracket

32 bowl cup

100, 200, 300, 400, 500 semiconductor light emitting devices

Detailed ways

FIG. 5 is a cross-sectional view of a semiconductor light emitting device structure 100 , the fabrication process of which is shown in FIGS. 1 to 5 . As shown in FIG. 1 , a light emitting diode is taken as an example, which includes a growth substrate 21 whose material can be gallium arsenide, silicon, silicon carbide, sapphire, indium phosphide, gallium phosphide, aluminum nitride or gallium nitride. Next, an epitaxial structure 22 is formed on the growth substrate 21 . The epitaxial structure 22 is formed by an epitaxial process, such as metal organic vapor deposition epitaxy (MOCVD), liquid phase epitaxy (LPE) or molecular beam epitaxy (MBE). The epitaxial structure 22 includes at least a first electrical semiconductor layer 23, such as an n-type aluminum gallium indium phosphide (Al _x Ga _1-x ) _y In _1-y P layer or an n-type aluminum gallium indium nitride ( Al _x Ga _1-x ) _y In _1-y N layer; an active layer 24, such as aluminum gallium indium phosphide (Al _x Ga _1-x ) _y In _1-y P or aluminum gallium indium nitride (Al _x Ga _1-x ) _y In _1-y N multiple quantum well structure; and a second electrical semiconductor layer 25, such as a p-type aluminum gallium indium phosphide (Al _x Ga _1-x ) _y In _1-y P layer or a p-type aluminum gallium indium nitride (Al _x Ga _1-x ) _y In _1-y N layer. In addition, the active layer 24 of this embodiment can be formed by stacking, for example, a homostructure, a single heterostructure, a double heterostructure, or a multiple quantum well structure.

Next, a second electrical contact layer 26 and a reflective layer 27 are formed on the epitaxial structure 22 . The material of the second electrical contact layer 26 can be indium tin oxide (Indium Tin Oxide), indium oxide (Indium Oxide), tin oxide (Tin Oxide), cadmium tin oxide (Cadmium Tin Oxide), zinc oxide (ZincOxide), magnesium oxide (Magnesium Oxide) or Titanium Nitride (Titanium Nitride) and other conductive oxide materials. The reflective layer 27 can be a metal material, such as aluminum, gold, platinum, zinc, silver, nickel, germanium, indium, tin and other metals or alloys thereof; it can also be made of a combination of metal and oxide, such as indium tin oxide/silver (ITO /Ag), indium tin oxide/alumina/silver (ITO/AlOx/Ag), indium tin oxide/titanium oxide/silicon oxide (ITO/TiOx/SiOx), titanium oxide/silicon oxide/aluminum (TiOx/SiOx/Al ), indium tin oxide/silicon nitride/aluminum (ITO/SiNx/Al), indium tin oxide/silicon nitride/silver (ITO/SiNx/Ag), indium tin oxide/silicon nitride/aluminum oxide/aluminum (ITO /SiNx/Al ₂ O ₃ /Al), or indium tin oxide/silicon nitride/alumina/silver (ITO/SiNx/Al ₂ O ₃ /Ag), etc.

As shown in FIG. 2 , it includes a conductive substrate 11 with a bonding layer 12 thereon.

Next, as shown in FIG. 1 , the epitaxial structure 22 with the reflective layer 27 is bonded on the bonding layer 12 as shown in FIG. 2 , and the growth substrate 21 (not shown) is removed, as shown in FIG. 3 . The bonding layer 12 can be made of metal, such as gold tin (AuSn), indium silver (InAg), indium gold (InAu), indium (In), gold (Au), aluminum (Al) and silver (Ag). etc. or alloys of the above metals.

Electrodes 13 and 14 are respectively formed on the first electrical semiconductor layer 23 and the back of the conductive substrate 11 (as shown in FIG. 4 ). Then coat a layer of transparent adhesive material 15 with a thickness of at least 0.3mm on the area other than the upper electrode of the first electrical semiconductor layer 23. This transparent adhesive material can be epoxy resin (Epoxy), and the coated area of the transparent adhesive material Not larger than the area of the epitaxial structure. A reflective wall 17 is then formed on the side of the transparent adhesive material. The wavelength conversion structure 16 covers the entire upper surface of the transparent adhesive material, wherein the wavelength conversion structure 16 is composed of at least one wavelength conversion material. That is, a semiconductor light emitting device structure 100 (as shown in FIG. 5 ) is formed.

When the epitaxial structure 22 is injected with current, it can excite a primary color light. After the primary color light passes through the transparent adhesive material 15, the transmittance of the transparent adhesive material is close to 99-100%, and the lateral light emission will be reflected by the side reflective wall. 17 reflects the light back, so the light extraction efficiency will not decrease. The primary color light enters the wavelength conversion structure 16 and is absorbed by the wavelength conversion material in the wavelength conversion structure to generate a color-changing light with a wavelength different from that of the primary color light. Since the wavelength conversion material is not limited to one kind, the color-changing light may contain multiple colors.

In this embodiment, the wavelength conversion material is fluorescent powder, such as Y ₃ Al ₅ O ₁₂ . In addition, wavelength conversion materials also include but are not limited to Gd ₃ Ga ₅ O ₁₂ : Ce, (Lu, Y) ₃ Al ₅ O ₁₂ : Ce, SrS: Eu, SrGa ₂ S ₄ : Eu, (Sr, Ca , Ba) (Al, Ga) ₂ S ₄ : Eu, (Ca, Sr) S: Eu, Mn, (Ca, Sr) S: Ce, (Sr, Ba, Ca) ₂ Si ₅ N ₈ : Eu, ( Ba, Sr, Ca)2SiO ₄ :Eu, (Ca,Sr,Ba)Si ₂ O ₂ N ₂ :Eu; preferably a non-electrically insulating material such as CdZnSe.

FIG. 6 is a cross-sectional view of another embodiment of a semiconductor light emitting device structure 200 . Its pre-production procedure is the same as that of the previous embodiment, as shown in Figures 1 to 4. Then, a layer of transparent adhesive material 15 with a thickness of at least 0.3 mm is coated on the area other than the upper electrode of the first electrical semiconductor layer 23. The transparent adhesive material can be epoxy resin (Epoxy), and the coated area of the transparent adhesive material Not larger than the area of the epitaxial structure. Then, a reflective wall 17 is formed on the side of the transparent adhesive material, and at least one wavelength conversion material is uniformly distributed in the transparent adhesive material to form a semiconductor light emitting device structure 200, as shown in FIG. 6 . When the epitaxial structure 22 is injected with current, it can excite a primary color light. After the primary color light passes through the transparent adhesive material with a uniform distribution of the wavelength conversion material, the primary color light is absorbed by the wavelength conversion material to generate a wavelength different from the primary color light. Color changing light. Since the wavelength conversion material is not limited to one kind, the color-changing light may contain multiple colors.

FIG. 7 is a cross-sectional view of a semiconductor light emitting device structure 300 according to yet another embodiment. Its pre-production procedure is the same as that of the previous embodiment, as shown in Figures 1 to 4. Then, a layer of transparent adhesive material 15 with a thickness of at least 0.3mm is coated on the area other than the upper electrode of the first electrical semiconductor layer 23. This transparent adhesive material 15 can be epoxy resin (Epoxy), and the transparent adhesive material 15 is coated with The cloth area is not larger than the epitaxial structure area. A reflective wall 17 is then formed on the side of the transparent adhesive material 15, and another layer of wavelength conversion structure 16 is formed in the transparent adhesive material 15, wherein the wavelength conversion structure 16 includes at least one wavelength conversion material, that is, a semiconductor light emitting device structure 300 is formed. , as shown in Figure 7. When the epitaxial structure 22 is injected with current, it can excite a primary color light. After the primary color light passes through the transparent adhesive material 15, the transmittance of the transparent adhesive material 15 is close to 99-100%, and the side light emission will be reflected by the side. The wall 17 reflects the light back, so the light extraction efficiency is not reduced. The primary color light enters the wavelength conversion structure 16 and is absorbed by the wavelength conversion material to generate a color-changing light with a wavelength different from that of the primary color light. Since the wavelength conversion material is not limited to one kind, the color-changing light may contain multiple colors. Finally, the light comes out through the transparent glue above.

Figure 8A is a top view of a semiconductor light emitting device structure 400, Figure 8B is a cross-sectional view of the structure obtained by cutting along the dotted line a'a', and viewed from the direction of the arrow a, Figure 8C is a cut along the dotted line b'b', according to The resulting structural cross-sectional view is viewed in the direction of the arrow b. Its front-stage production procedure is the same as that of the previous embodiment, as shown in Fig. 1 to Fig. 3 . After removing the growth substrate 21 (not shown in the figure), on the side of the epitaxial structure 22, from the first electrical semiconductor layer 23, the active layer 24, the second electrical semiconductor layer 25, the second electrical contact layer 26, the reflective layer 27. After the bonding layer 12 is sequentially etched from top to bottom to the upper surface of the conductive substrate 11 , electrodes 13 and 14 are formed on the first electrical semiconductor layer 23 and the back of the conductive substrate 11 respectively. Next, coat a layer of transparent adhesive material 15 with a thickness of at least 0.3mm on the area other than the upper electrode of the first electrical semiconductor layer 23. This transparent adhesive material can be epoxy resin (Epoxy), and the transparent adhesive material is coated with The cloth area is not larger than the epitaxial structure area. The wavelength conversion structure 16 covers the entire upper surface of the transparent adhesive material, wherein the wavelength conversion structure 16 is composed of at least one wavelength conversion material. In order to prevent the light-emitting diode from escaping from the side, the side of the transparent adhesive material 15 and from the first electrical semiconductor layer 23, the active layer 24, the second electrical semiconductor layer 25, the second electrical contact layer 26, and the reflective layer 27. A reflective wall 17 is formed on the side of each layer above the bonding layer 12, that is, a semiconductor light emitting device structure 400 is formed, as shown in FIG. 8C. When the epitaxial structure 22 is injected with current, it can excite a primary color light. After the primary color light passes through the transparent adhesive material 15, the transmittance of the transparent adhesive material is close to 99-100%, and the side light emission will be reflected by the side reflective wall 17. Reflect the light back, so the light extraction efficiency will not decrease. The primary color light enters the wavelength conversion structure 16 and is absorbed by the wavelength conversion material to generate a color-changing light with a wavelength different from that of the primary color light. Since the wavelength conversion material is not limited to one kind, the color-changing light may contain multiple colors.

The same design concept can also be applied to the packaging structure 1 of the semiconductor light emitting device, as shown in FIG. 9 . A semiconductor light emitting device 500 is fixed on a support 31, and is electrically connected to a circuit on the support. There is a bowl 32 on the bracket, and a reflective wall 33 inside the bowl, and the angle between a part of the reflective wall and the bracket is about 45 degrees. Fill a transparent adhesive material 15 in the bowl, and the height of the transparent adhesive material is at least greater than the height of the semiconductor light emitting device 500. The transparent adhesive material can be epoxy resin (Epoxy); and the coated area of the transparent adhesive material is not larger than the area of the epitaxial structure . A wavelength conversion structure 16 is then formed on the transparent adhesive material, that is, the semiconductor light emitting device packaging structure 1 is formed. After the primary color light generated by the semiconductor light-emitting device 500 passes through the transparent adhesive material 15, the transmittance of the transparent adhesive material is close to 99-100%, and the side-emitting light will be reflected back by the reflective wall 33, so the light extraction efficiency will not decrease . The primary color light enters the wavelength conversion structure 16 and is absorbed by the wavelength conversion material in the wavelength conversion structure to generate a color-changing light with a wavelength different from that of the primary color light. Since the wavelength conversion material is not limited to one kind, the color-changing light may contain multiple colors.

FIG. 10 is a cross-sectional view of the package structure 2 of the semiconductor light emitting device. Most of its manufacturing procedures are similar to those of semiconductor light-emitting device packaging structure 1, but it also includes a wavelength selection film (wavelength selection film, WSF) 18 formed between the transparent adhesive material 15 and the wavelength conversion structure 16, and its function is to allow visible light to pass through to the wavelength The conversion structure is directed forward, but the visible light reflected back by the wavelength conversion structure cannot pass through the film.

The design of the reflective wall 33 inside the bowl can be as shown in Figure 11, and its reflection effect is better than that in Figure 10.

However, the above-mentioned embodiments are only for illustrating the principles and effects of the present invention, rather than limiting the present invention. Any person skilled in the art can modify and change the above-mentioned embodiments without violating the technical principle and spirit of the present invention. Therefore, the protection scope of the present invention is as listed in the following claims.

Claims (10)

1. semiconductor light-emitting apparatus comprises:

One electrically-conductive backing plate;

The luminous lamination of semiconductor is positioned on this electrically-conductive backing plate;

One reflector is between this electrically-conductive backing plate and this semiconductor light emitting lamination;

One transparent adhesive tape material is positioned on this semiconductor light emitting lamination, and this transparent adhesive tape material thickness is at least 0.3mm;

One reflecting wall is positioned at the side of this transparent adhesive tape material; And

One Wavelength transformational structure is positioned on this transparent adhesive tape material, and wherein this Wavelength transformational structure comprises at least one material for transformation of wave length.

2. semiconductor light-emitting apparatus as claimed in claim 1, wherein this transparent adhesive tape material is an epoxy resin, and this transparent adhesive tape material spreading area is not more than this semiconductor light emitting lamination area.

3. semiconductor light-emitting apparatus as claimed in claim 1, wherein the material in the reflection wall materials of this transparent adhesive tape material side and this reflector is selected from the group that combination constituted of metal or its alloy, oxide and above-mentioned material.

4. semiconductor light-emitting apparatus comprises:

One electrically-conductive backing plate;

The luminous lamination of semiconductor is positioned on this electrically-conductive backing plate;

One reflector is between this electrically-conductive backing plate and this semiconductor light emitting lamination;

One transparent adhesive tape material is positioned on this semiconductor light emitting lamination, and this transparent adhesive tape material thickness is at least 0.3mm;

One reflecting wall is positioned at the side of this transparent adhesive tape material; And

One material for transformation of wave length is dispersed between this transparent adhesive tape material.

5. semiconductor light-emitting apparatus as claimed in claim 4, wherein this transparent adhesive tape material is an epoxy resin, and this transparent adhesive tape material spreading area is not more than this semiconductor light emitting lamination area.

6. semiconductor light-emitting apparatus as claimed in claim 4, wherein the material in the reflection wall materials of this transparent adhesive tape material side and this reflector is selected from the group that combination constituted by metal or its alloy, oxide and above-mentioned material.

7. semiconductor light-emitting apparatus comprises:

One electrically-conductive backing plate;

The luminous lamination of semiconductor is positioned on this electrically-conductive backing plate;

One reflector is between this electrically-conductive backing plate and this semiconductor light emitting lamination;

One transparent adhesive tape material is positioned on this semiconductor light emitting lamination, and this transparent adhesive tape material thickness is at least 0.3mm;

One reflecting wall is positioned at the side of this transparent adhesive tape material; And

One Wavelength transformational structure is positioned among this transparent adhesive tape material, and wherein this Wavelength transformational structure comprises at least one material for transformation of wave length.

8. semiconductor light-emitting apparatus as claimed in claim 7, wherein this transparent adhesive tape material is an epoxy resin, and this transparent adhesive tape material spreading area is not more than this semiconductor light emitting lamination area.

9. semiconductor light-emitting apparatus as claimed in claim 7, wherein the material in the reflection wall materials of this transparent adhesive tape material side and this reflector is selected from the group that combination constituted of metal or its alloy, oxide and above-mentioned material.

10. a semiconductor light-emitting apparatus encapsulating structure comprises

One support;

One bowl of cup is positioned on this support;

One reflecting wall is positioned at this bowl cup inboard, and angle is spent to 60 degree between 30 between this reflecting wall subregion and this support;

One light-emitting device is fixed in this bowl cup;

One transparent adhesive tape material filling is in this bowl cup, and this transparent adhesive tape material height is greater than the height of this light-emitting device; And

One Wavelength transformational structure is formed on this transparent adhesive tape material, and

One wavelength is selected film, is formed between this transparent adhesive tape material and this Wavelength transformational structure.

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