CN101651332A - Power protection circuit preventing controlled silicon effect - Google Patents
Power protection circuit preventing controlled silicon effect Download PDFInfo
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- CN101651332A CN101651332A CN200910092781A CN200910092781A CN101651332A CN 101651332 A CN101651332 A CN 101651332A CN 200910092781 A CN200910092781 A CN 200910092781A CN 200910092781 A CN200910092781 A CN 200910092781A CN 101651332 A CN101651332 A CN 101651332A
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- 230000000694 effects Effects 0.000 title claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 23
- 229910052710 silicon Inorganic materials 0.000 title abstract description 23
- 239000010703 silicon Substances 0.000 title abstract description 23
- 239000003990 capacitor Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 abstract description 2
- 238000012423 maintenance Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
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Abstract
一种防可控硅效应的电源保护电路，本发明主要用于电路的电源输入端，以恒流源为基础，运用反馈原理及电容两端电压不能突变的原理加入瞬间切断功能，当电路发生可控硅闩锁效应时能够瞬间将电路板的供电电源切断从而破坏可控硅效应所需的维持电流条件而将其彻底消除，能有效的抑制开机浪涌电流，当可控硅效应消除后，能够迅速恢复对电路板的正常供电，本方法同时对负载短路提供有效的保护措施，当负载短路发生时，仅提供极小的电流，该电路结构简单、易于实现。
A power supply protection circuit for preventing silicon controlled rectifier effect. The invention is mainly used for the power supply input end of the circuit. Based on the constant current source, the feedback principle and the principle that the voltage at both ends of the capacitor cannot be changed suddenly are added with the instantaneous cut-off function. When the thyristor latch-up effect occurs, the power supply of the circuit board can be cut off instantly to destroy the maintenance current condition required by the thyristor effect and completely eliminate it, which can effectively suppress the start-up surge current. When the thyristor effect is eliminated , can quickly restore the normal power supply to the circuit board, the method also provides effective protection measures for the load short circuit, when the load short circuit occurs, only a very small current is provided, and the circuit structure is simple and easy to implement.
Description
Technical field
The present invention relates to a kind of power protecting circuit, relate in particular to a kind of power protecting circuit of preventing controlled silicon effect.
Background technology
The power input of circuit board generally all is connected to filter circuit at present, and its filter resistance is smaller, and the preventing controlled silicon latch-up has certain degree of difficulty; Some current detecting chips are arranged at present, when source current surpasses set point, can go out a signal, but this chip is not to be specifically designed to eliminate the controllable silicon latch-up.Wherein 2005 the 12nd the volume the 10th phase " electronic design technology " " preventing that ESD from causing the power circuit breaker of device breech lock " disclosed, when device is subjected to the ESD triggering, the parasitic transistor that constitutes a part in the cmos device can show as a silicon controlled rectifier, in case ESD triggers, silicon controlled rectifier can form a low impedance path between two parts of cmos device, and serious conduction.This article mainly utilizes peripheral resistor network, field effect transistor and photoelectric coupled device to constitute the power circuit breaker of device breech lock, and when breech lock took place, resistor network voltage raise, thereby photoelectric coupled device drags down fet gate voltage with power remove.
Summary of the invention
Technology of the present invention is dealt with problems and is: overcome the deficiencies in the prior art; a kind of power protecting circuit of preventing controlled silicon effect is provided; the present invention can effectively eliminate the controllable silicon latch-up that takes place in the power-supplying circuit; and power supply had load short circuit protection function; circuit structure is simple, is easy to realize.
Technical solution of the present invention is: a kind of power protecting circuit of preventing controlled silicon effect; comprise: by the first diode D1; the second diode D2; the constant-current source that the first transistor Q1 and first resistance R 0 are formed and by transistor seconds Q2; second resistance R 1; the 3rd resistance R 2; the switching circuit that the 4th resistance R 3 and first capacitor C 1 are formed; the emitter of the first transistor Q1 connects the positive pole of power supply by first resistance R 0; be connected on the base stage of positive source and the first transistor Q1 after the first diode D1 and the second diode D2 series connection; the collector electrode of the first transistor Q1 is as the output of power protecting circuit; the 3rd resistance R 2; the 4th resistance R 3 be connected between the output of positive source and power protecting circuit after first capacitor C 1 is connected; the collector electrode of transistor seconds Q2 is connected with the base stage of the first transistor Q1 by second resistance R 1; the base stage of transistor seconds Q2 is connected between the 3rd resistance R 2 and the 4th resistance R 3, the grounded emitter of transistor seconds Q2.
Comprise that also the 5th resistance R 4, second capacitor C 2 and the 6th resistance R 5, the five resistance R 4 and second capacitor C 2 series connection back are in parallel with the 4th resistance R 3, the 6th resistance R 5 is connected between the collector electrode of the base stage of transistor seconds Q2 and the first transistor Q1.
Be connected between the emitter of positive source and the first transistor Q1 after also comprising the 7th resistance R 6, the seven resistance R 6 that are used to regulate the power protecting circuit maximum output current and first resistance R 0 being in parallel.
Described the first transistor Q1 is a PNP transistor, and transistor seconds Q2 is a NPN transistor.
The present invention's beneficial effect compared with prior art is: the present invention is mainly used in the power input of circuit, with diode D1, D2, the constant-current source that resistance R 0 and transistor Q1 form is the basis, the principle that utilization feedback principle and electric capacity both end voltage can not be suddenlyd change adds the instantaneous trip function, thereby can moment when circuit generation controllable silicon latch-up with the power supply of circuit board cut off destroy controlled silicon effect required keep current condition and with its thorough elimination, after controlled silicon effect is eliminated, can recover normal power supply rapidly to circuit board; The present invention to connecting two parallel branches between the base stage of transistor Q2, provides effective safeguard measure to load short circuits at power supply, and when load short circuits took place, circuit only provided minimum electric current, and this circuit can effectively suppress the surge current of starting shooting in addition; The size of this circuit by regulating resistance R 6 can easily regulating circuit maximum output current, utilize the size of capacitor C 1 or resistance of C1 series connection to realize adjusting to turn-off time length.The present invention with constant-current source and moment breaking circuit in chip piece, be achieved, circuit structure is more simple.
Description of drawings
Fig. 1 is that the power protecting circuit of preventing controlled silicon effect is formed schematic diagram;
Fig. 2 is that preventing controlled silicon effect and anti-load short circuits power protecting circuit are formed schematic diagram.
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is done further detailed description:
As shown in Figure 1; a kind of power protecting circuit of preventing controlled silicon effect; comprise by the first diode D1; the second diode D2; the constant-current source that the first transistor Q1 and first resistance R 0 are formed and by transistor seconds Q2; second resistance R 1; the 3rd resistance R 2; the switching circuit that the 4th resistance R 3 and first capacitor C 1 are formed; the emitter of the first transistor Q1 connects the positive pole of power supply by first resistance R 0; be connected on the base stage of positive source and the first transistor Q1 after the first diode D1 and the second diode D2 series connection; the collector electrode of the first transistor Q1 is as the output of power protecting circuit; the 3rd resistance R 2; the 4th resistance R 3 be connected between the output of positive source and power protecting circuit after first capacitor C 1 is connected; the collector electrode of transistor seconds Q2 is connected with the base stage of the first transistor Q1 by second resistance R 1; the base stage of transistor seconds Q2 is connected between the 3rd resistance R 2 and the 4th resistance R 3, the grounded emitter of transistor seconds Q2.Wherein the first transistor Q1 is a PNP transistor, and transistor seconds Q2 is a NPN transistor.
Constant-current source by two diodes, transistor Q1 and resistance R 0 structure, after transistor Q1 conducting, its base-emitter voltage is certain, thereby the pressure reduction of the base-emitter voltage of the pressure reduction of two diode D1, D2 and transistor Q1 is certain, and the maximum voltage of power supply and transistor Q1 emitter is about 0.6～0.7V.
The principle that utilization electric capacity both end voltage can not be suddenlyd change, behind the circuit generation controllable silicon latch-up that power supply is powered, output potential moment reduces to very little, because capacitor C 1 both end voltage can not be suddenlyd change, therefore the potential drop of capacitor C 1 other end is to transistor Q2 conducting necessary potential, transistor Q2 is turned off, can not provide base current for the transistor Q1 in the constant-current source, transistor Q1 in the constant-current source is turned off, so far the power supply of entire circuit plate is cut off, controlled silicon effect to keep current condition destroyed, thereby the controllable silicon latch-up is thoroughly eliminated.After the controllable silicon latch-up is eliminated, power supply charges for external capacitor C1 by resistance R 3, when capacitor C 1 links to each other after the current potential of a side reaches transistor Q2 conducting current potential transistor Q2 conducting with the base stage of transistor Q2, and then the transistor Q1 conducting in the constant-current source, it is normal that circuit supply recovers.If load does not absorb the electric current that constant-current source sets after the circuit operate as normal, transistor Q1 will be operated in saturation condition so, and tube voltage drop is very little, and it is very little to consume energy.
As shown in Figure 2; in order to make power protecting circuit have load short circuit protection function; in circuit, increase the 5th resistance R 4, second capacitor C 2 and the 6th resistance R 5; the 5th resistance R 4 and second capacitor C 2 series connection back are in parallel with the 4th resistance R 3, and the 6th resistance R 5 is connected between the collector electrode of the base stage of transistor seconds Q2 and the first transistor Q1.Power supply connects two parallel branches to the base stage of transistor Q2, one is pure resistance branch road (being resistance R 3), another is capacitance-resistance series arm (being the capacitance-resistance series circuit that resistance R 4 and capacitor C 2 are formed), the base stage of transistor Q2 is connected to anti-short-circuit resistance (i.e. the 6th resistance R 5) to the constant-current source output, and this two parts circuit constitutes bleeder circuit to the base stage of transistor Q2.In start moment, because the electric capacity in the capacitance-resistance branch road in the bleeder circuit is equivalent to short circuit, so partial pressure value can reach the needed voltage levvl of transistor Q2 conducting, transistor Q2 conducting, and then constant source flowing transistor Q1 conducting, and power supply is to the circuit normal power supply.After load is short-circuited, process when being similar to the controllable silicon latch-up, transistor Q2 and constant source flowing transistor Q1 were turn-offed by moment, this moment, bleeder circuit was made of two pure resistance circuit (being the branch road that resistance R 3 and resistance R 5 constitute respectively), this partial pressure value is not enough to the conducting with transistor Q2, constant source flowing transistor Q1 can not conducting, and power supply is supplied minimum electric current by very big resistance R 3 for short circuit load.
Foregoing circuit also comprises the 7th resistance R 6 that is used to regulate the power protecting circuit maximum output current; resistance R 0 parallel resistance R6 can set the maximum output current of power protecting circuit; because power protecting circuit adopts constant-current source; moment the maximum output current of power supply can be restricted to the constant-current source output current that sets in the power supply start, effectively suppress the start surge current.
Embodiment 1
The voltage scope of application is 5-15V, and it is 10 ohm that resistance R 0 is selected for use, and upward the resistance of parallel resistor R6 can be so that maximum output current 60-500mA be adjustable by selecting R0; Resistance R 3 is selected 430K ohm for use, and resistance R 2 is selected 500-1K ohm for use, and resistance R 1 is selected 510 ohm for use, and capacitor C 1 is selected 0.47 μ F for use, and capacitor C 1 can adopt the capacitance-resistance series circuit, to regulate the time that back power up normal power supply takes place controlled silicon effect.When load is short-circuited fault, transistor Q2 and transistor Q1 are by instantaneous shutoff, the base voltage of transistor Q2 is (Vin * 10)/(430+10), wherein resistance R 5 is selected 10k Ω for use, the base voltage of transistor Q2 is less than 0.6V, thereby transistor Q1 also can't conducting, and the electric current of supplying with short circuit load is the leakage current of transistor Q1 and the power supply very little electric current by very big resistance supply.
The present invention not detailed description is a general knowledge as well known to those skilled in the art.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100927810A CN101651332B (en) | 2009-09-25 | 2009-09-25 | Power protection circuit preventing controlled silicon effect |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100927810A CN101651332B (en) | 2009-09-25 | 2009-09-25 | Power protection circuit preventing controlled silicon effect |
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| CN101651332A true CN101651332A (en) | 2010-02-17 |
| CN101651332B CN101651332B (en) | 2011-06-15 |
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| CN2009100927810A Active CN101651332B (en) | 2009-09-25 | 2009-09-25 | Power protection circuit preventing controlled silicon effect |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101986492A (en) * | 2010-11-08 | 2011-03-16 | 中兴通讯股份有限公司 | Short-circuit protection circuit and short-circuit protection method |
| CN103762558A (en) * | 2014-01-21 | 2014-04-30 | 北京航空航天大学 | Recoverable power interface circuit resistant to single event latchup |
| CN104020833A (en) * | 2014-06-25 | 2014-09-03 | 苏州塔可盛电子科技有限公司 | Anti-interference singlechip reset circuit |
| CN104882103A (en) * | 2015-05-11 | 2015-09-02 | 深圳天珑无线科技有限公司 | Latch-up effect recovering circuit and liquid crystal display device |
| CN107222021A (en) * | 2017-07-14 | 2017-09-29 | 钦州学院 | A kind of aid-to-navigation light electric control system |
| CN107528307A (en) * | 2016-06-22 | 2017-12-29 | 赛尔富电子有限公司 | A kind of protection circuit for LED power load short circuits |
| CN110764008A (en) * | 2019-12-11 | 2020-02-07 | 中检集团南方测试股份有限公司 | Battery short circuit testing machine |
-
2009
- 2009-09-25 CN CN2009100927810A patent/CN101651332B/en active Active
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101986492A (en) * | 2010-11-08 | 2011-03-16 | 中兴通讯股份有限公司 | Short-circuit protection circuit and short-circuit protection method |
| CN101986492B (en) * | 2010-11-08 | 2015-01-28 | 中兴通讯股份有限公司 | Short-circuit protection circuit and short-circuit protection method |
| CN103762558A (en) * | 2014-01-21 | 2014-04-30 | 北京航空航天大学 | Recoverable power interface circuit resistant to single event latchup |
| CN104020833A (en) * | 2014-06-25 | 2014-09-03 | 苏州塔可盛电子科技有限公司 | Anti-interference singlechip reset circuit |
| CN104882103A (en) * | 2015-05-11 | 2015-09-02 | 深圳天珑无线科技有限公司 | Latch-up effect recovering circuit and liquid crystal display device |
| CN104882103B (en) * | 2015-05-11 | 2017-10-24 | 深圳天珑无线科技有限公司 | A kind of latch-up restoring circuit and liquid crystal display device |
| CN107528307A (en) * | 2016-06-22 | 2017-12-29 | 赛尔富电子有限公司 | A kind of protection circuit for LED power load short circuits |
| CN107528307B (en) * | 2016-06-22 | 2021-09-10 | 赛尔富电子有限公司 | Protection circuit for short circuit of LED power supply load |
| CN107222021A (en) * | 2017-07-14 | 2017-09-29 | 钦州学院 | A kind of aid-to-navigation light electric control system |
| CN107222021B (en) * | 2017-07-14 | 2023-06-20 | 钦州学院 | Electric control system of navigational lamp |
| CN110764008A (en) * | 2019-12-11 | 2020-02-07 | 中检集团南方测试股份有限公司 | Battery short circuit testing machine |
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| Publication number | Publication date |
|---|---|
| CN101651332B (en) | 2011-06-15 |
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