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CN101651126A - 芯片封装件及其制造方法 - Google Patents

芯片封装件及其制造方法 Download PDF

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CN101651126A
CN101651126A CN200810146150A CN200810146150A CN101651126A CN 101651126 A CN101651126 A CN 101651126A CN 200810146150 A CN200810146150 A CN 200810146150A CN 200810146150 A CN200810146150 A CN 200810146150A CN 101651126 A CN101651126 A CN 101651126A
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carrier substrate
area
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夏一凡
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Samsung Semiconductor China R&D Co Ltd
Samsung Electronics Co Ltd
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Samsung Semiconductor China R&D Co Ltd
Samsung Electronics Co Ltd
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Abstract

本发明提供了一种芯片封装件及其制造方法,所述芯片封装件包括:具有第一区域和环绕第一区域的第二区域的载体基板,第一区域的厚度大于第二区域的厚度,并在该载体基板一面形成多个分隔槽,以将所述载体基板的第二区域分为多个子基板;设置在所述载体基板第一区域上通过粘结层粘结的芯片,该芯片具有输入输出端口;用于将所述芯片的输入输出端口与所述载体基板电结合的多条引线;覆盖在所述载体基板上的包封层,以用于包封所述的芯片和多条引线。

Description

芯片封装件及其制造方法
技术领域
本发明涉及一种芯片封装件及其制造方法,具体地讲,涉及一种多引脚芯片封装件及其制造方法。
背景技术
在半导体行业中,芯片封装件技术持续地发展,以满足对于小尺寸、高密度和高可靠性的芯片封装件的需要。同时,具有多功能的芯片的输入输出端口数量越来越多。
具体地讲,传统的芯片封装件100包括引线框架110、粘结层120、芯片130、金属引线140和塑封胶150,如图1所示。
在传统的制造芯片封装件100的工艺过程中,芯片130通过粘结层120固定在引线框架A的芯片座(die paddle)上。通过引线键合的方式,使用金属引线110将半导体芯片的输入输出端口和引线框架110的内引脚电连接,内引脚与引线框架110的外引脚相连,从而形成电路回路。通过塑封胶150将芯片130、金属引线140和内引脚进行塑封,从而保护芯片130。在塑封过程结束后,使塑封胶150固化,打印标记,并切除坝条(dam bar)。然后对外引脚表面进行电镀并使外引脚成形。从而完成芯片封装件100。
传统的芯片封装件100的引线框架110用于支撑芯片并包括输入输出信号的多个引脚。由于引脚的位置分布于传统的芯片封装件的周围,所以引脚的这种结构限制的引脚的数量。具体地讲,引脚的宽度和彼此之间的间距限制了引脚的数量。例如,当引脚的宽度达到0.16mm、间距达到0.4mm时,引脚数量会达到上限。因此,传统的引线框架型芯片封装件的引脚数不多于240个。
发明内容
基于现有技术,本发明的一方面在于提供一种有效利用芯片封装件的具有突起结构的载体基板作为引脚的芯片封装件,从而增加了引脚数量、提高了可靠性、简化了制造工艺并降低了制造成本。本发明的另一方面在于提供一种制造芯片封装件的方法,从而保护芯片封装件中的元件和/或层不受封装工艺和/或外部环境的影响。
根据本发明一个示例实施例的芯片封装件包括:具有第一区域和环绕第一区域的第二区域的载体基板,第一区域的厚度大于第二区域的厚度,并在该载体基板一面形成多个分隔槽,以将所述载体基板的第二区域分为多个子基板;设置在所述载体基板第一区域上通过粘结层粘结的芯片,该芯片具有输入输出端口;用于将所述芯片的输入输出端口与所述载体基板电结合的多条引线;覆盖在所述载体基板上的包封层,以用于包封所述的芯片和多条引线。
所述多个分隔槽的深度可以大于第二区域的厚度并小于第一区域的厚度。所述多条引线可以将芯片的输入输出端口分别与第二区域中的子基板电结合。所述结合于载体基板的多条引线端可以与载体基板形成预定的角度,以防在形成多个分隔槽时损坏所述多条引线。载体基板可以由通用引线框架材料形成。
所述芯片封装件还可以包括形成在载体基板的没有被包封层覆盖的表面上的镀膜层。
所述芯片可以为通过粘结层叠加粘结的多个芯片。引线可以为弧线形状,并且与上面的芯片的输入输出端口电结合的引线的弧线高度可以高于与下面的芯片的输入输出端口电结合的引线的弧线高度。
根据本发明一个示例实施例的制造芯片封装件的方法包括的步骤如下:设置具有第一区域和环绕第一区域的第二区域的载体基板,所述第一区域的厚度大于第二区域的厚度;所述载体基板的第一区域上设置通过粘结层粘结的具有输入输出端口的芯片;设置多条引线,以将所述芯片的输入输出端口与所述载体基板电结合;形成覆盖所述载体基板一面的包封层,以包封所述的芯片和多条引线;所述载体基板另一面形成多个分隔槽,以将所述载体基板的第二区域分为多个子基板。
所述形成多个分隔槽的步骤为通过切割的方法形成多个分隔槽,并且分隔槽的深度形成为大于第二区域的厚度并小于第一区域的厚度。所述设置多条引线的步骤为将所述多条引线分别与所述芯片的输入输出端口及所述载体基板的第二区域电结合。所述设置芯片的步骤为控制所述芯片的边缘和所述载体基板的第一区域的边缘的距离,以确定芯片的位置。所述设置多条引线的步骤为采用正常打线或倒打线的方法将所述多条引线分别与芯片的输入输出端口及所述载体基板电结合。当采用倒打线的方法时,可以将电结合于载体基板的多条引线端设置为与所述载体基板形成预定的角度,以防在形成多个分隔槽时损坏所述多条引线。
所述方法还可以包括使用电镀的方法在载体基板的没有被包封层覆盖的表面上形成镀膜层。
所述设置芯片的步骤进一步包括通过粘结层叠加粘结多个芯片。引线可以形成为弧线形状,并且与上面的芯片的输入输出端口电结合的引线的弧线高度可以高于与下面的芯片的输入输出端口电结合的引线的弧线高度。
附图说明
图1是示出了传统的芯片封装件的剖视图。
图2A和图2B是示出了根据本发明示例实施例的单芯片封装件的剖视图。
图3A和图3B是示出了根据本发明示例实施例的多芯片封装件的剖视图。
图4A至图14B分别是示出了根据本发明示例实施例的制造芯片封装件的方法的正视图、后视图和剖视图。
图15是示出了根据本发明示例实施例的芯片封装件的仿真剖视图。
具体实施方式
下文中,将参照附图来详细描述本发明的示例实施例。然而,本发明不限于这些示例实施例。相反,这些示例实施例意在解释本发明,并将本发明的范围充分地传达本领域的技术人员。在附图中,为了清晰起见,夸大了层和区域的尺寸。在整个说明书中,相同的标号表示相同的元件。
图2A和图2B是示出了根据本发明示例实施例的单芯片封装件的剖视图。
如图2A和图2B所示,根据本发明示例实施例的单芯片封装件200和200′可以包括载体基板210、粘结层220、芯片230、引线240、包封层250和多个分隔槽260。
载体基板210可以由通用引线框架材料形成。例如,载体基板210可以由诸如铜等的金属、诸如铁镍合金等的合金等的材料形成。如图2A所示,载体基板210可以包括第一区域211和第二区域212。第二区域212可以环绕第一区域211,并且第二区域212的厚度可以小于第一区域211的厚度。即载体基板可以具有突起结构,如图2A和2B所示。
粘结层220可以形成在载体基板210的第一区域211上。粘结层220可以由粘结胶形成。例如,粘结层220可以由诸如环氧树脂等的材料形成。因此,粘结层220可以将芯片230粘结并固定在载体基板上210。
芯片230可以设置在粘结层220上。为了保证芯片230置于载体基板210的第一区域211上,可以控制芯片230的边缘和载体基板210的第一区域211的边缘的距离以确定芯片230的位置。芯片230可以是诸如半导体芯片、集成电路等具有多个输入输出端口231的芯片。然而,本发明不限于芯片230的数量,即,可以在载体基板210的第一区域211上设置多个芯片230。
引线240将芯片230的多个输入输出端口231与载体基板210电结合。例如,多个输入输出端口231可以按照预定的信号连接线路分别通过对应的引线240与载体基板210的对应的区域电结合。引线240可以由诸如金的金属的材料形成。可以通过正常打线或倒打线的方式利用引线240将多个输入输出端口231与载体基板210电结合。优选地,可以采用倒打线的方式,以保证引线240与载体基板210之间基本垂直(即,引线240与载体基板210成大约90°的角度),如图2B所示。
包封层250可以覆盖在载体基板210上,并可以将粘结层220、芯片230和多条引线240包封以形成芯片封装件200和200′。包封层250可以由包含诸如环氧树脂的包封材料形成,从而保护芯片封装件200和200′的芯片230和多条引线240不受外部环境的影响。另外,可以在包封层250上打印标记(参见图14A)。
多个分隔槽260可以形成在载体基板210中。多个分隔槽260可以将载体基板210分为多个子基板213和214。多个子基板213可以位于载体基板210的第一区域211中,多个子基板214可以位于载体基板210的第二区域212中。多个分隔槽260的深度可以小于第一区域211的厚度并大于等于第二区域212的厚度。由于多个分隔槽260的深度可以大于等于第二区域212的厚度,所以多个子基板214可以通过多个分隔槽260而被彼此电隔离,即,多个分隔槽260可以暴露包封层的位于第二区域212上的一部分。另外,由于多个分隔槽260的深度小于第一区域211的厚度,所以多个分隔槽260可以不暴露位于第一区域211上的粘结层。即,可以在载体基板210的第一区域211中保留足够的余量,从而使得位于载体基板210的第一区域211上的元件和/或层不被暴露到外部。
因此,由于芯片封装件200和200′的上述结构,所以可以将第二区域211中的与引线240电结合的区域形成为多个引脚(即,子基板214)。另外,可以在载体基板210的暴露的表面(即,没有被包封层250覆盖的表面)上形成镀膜层270。例如,可以使用一般引线框架类芯片封装件所使用的材料通过电镀等方法(例如,纯锡电镀、无铅的锡铋(Sn/Bi)电镀或传统的锡铅电镀)来形成镀膜层270,从而提高芯片封装件的焊接性。
图3A和图3B是示出了根据本发明示例实施例的多芯片封装件的剖视图。
如图3A和图3B所示,根据本发明示例实施例的多芯片封装件300和300′可以包括载体基板310、第一粘结层320A和第二粘结层320B、第一芯片330A和第二芯片330、引线340、包封层350和多个分隔槽360。另外,多芯片封装件300和300′还可以包括镀膜层370。其中,载体基板310、包封层350、多个分隔槽360和镀膜层370可以与图2A和图2B中的载体基板210、包封层250、多个分隔槽260和镀膜层270类似,因此省略了详细的描述。
第一粘结层320A和第二粘结层320B以及第一芯片330A和第二芯片330B可以交替地形成和/或设置在载体基板310的第一区域311上。即,第一粘结层320A可以形成在第一区域311上,第一芯片330A可以设置在第一粘结层320A上。第二粘结层320B可以形成在第一芯片330A上,第二芯片可以设置在第二粘结层320B上。因此,第一粘结层320A可以将第一芯片330A粘结并固定在载体基板310上。第二粘结层320B可以将第二芯片330B粘结并固定在第一芯片330A上。
为了保证第一芯片330A置于载体基板310的第一区域311上,可以控制第一芯片330A的边缘和载体基板的第一区域311的边缘的距离以确定第一芯片330A的位置。
然而,应该理解的是,本发明不限于图3A和图3B中示出的粘结层和芯片的数量,即,根据本发明的芯片封装件可以包括多个粘结层和多个芯片,其中,多个粘结层可以形成在多个芯片和载体基板之间,以将多个芯片和载体基板彼此粘结固定。
可以分别通过对应的引线340将芯片330A和330B的多个输入输出端口331A和331B与载体基板310电结合。例如,可以按照预定的信号连接线路通过对应的引线340将多个输入输出端口331A和331B与载体基板310的对应的区域电结合。可以通过正常打线或倒打线的方式利用引线340将多个输入输出端口331A和331B与载体基板310电结合。优选地,可以采用倒打线的方式,以保证引线340与载体基板310之间基本垂直(即,引线340与载体基板310成大约90°的角度),如图3B所示。另外,如图3A和3B所示,与不同的芯片的输入输出端口电结合的形成为弧线形状的引线的弧线高度可以不同,从而在空间上将引线彼此分离,使得每条引线独立地传送相应的电信号。例如,将上面的芯片的输入输出端口331B与载体基板310电结合的引线的弧线高度可以高于将下面的芯片的输入输出端口331A与载体基板310电结合的引线的弧线高度。
下文中,将描述根据本发明示例实施例的制造芯片封装件的方法。图4A至图13C分别是示出了根据本发明示例实施例的制造芯片封装件的方法的正视图、后视图和剖视图。在图4A至图13C中,与先前通过标号标识的元件和/或层对应的元件和/或层没有进行标号或具有相同的标号。
如图4A和图4B所示,可以设置载体基板410。载体基板410可以被构造为包括第一区域411和第二区域412。第二区域412可以形成为环绕第一区域411。第二区域412的厚度可以形成得小于第一区域411的厚度,即,载体基板410可以具有突起结构。
如图5A和图5B所示,可以在载体基板410的第一区域411上形成第一粘结层420A。第一粘结层420A可以将随后设置在第一粘结层420A上的第一芯片430A粘结并固定在载体基板410上。
可以在第一粘结层420A上设置第一芯片430A。可以控制第一芯片430A的边缘和载体基板410的第一区域411的边缘的距离以确定第一芯片430A的位置,从而保证第一芯片430A置于载体基板的第一区域411上。
可选择地,可以在第一芯片430A上形成第二粘结层420B,并可以在第二粘结层420B上设置第二芯片430B,如图6A和图6B所示。因此,第二粘结层420B可以将第二芯片430B粘结并固定在第一芯片430A上。
然而,应该理解的是,本发明不限于图6A和图6B示出的粘结层和芯片的数量,即,根据本发明示例实施例的制造芯片封装件的方法,可以在载体基板上形成和/或设置多个粘结层和多个芯片。其中,可以在多个芯片和载体基板之间形成多个粘结层,从而将多个芯片和载体基板粘结固定。
如图7A至图8C所示,可以设置引线440以将芯片430A和430B的多个输入输出端口431A和431B与载体基板410电结合。图7A和图8A中的虚线表示将形成分隔槽(将在后面具体描述)的位置,即,虚线限定的区域与随后形成的子基板对应。然而,本发明不限于如图所示的虚线的矩形形状,即,可以以各种布置形状(例如,三角形、六边形等)的虚线来限定分隔槽的位置。例如,可以按照预定的信号连接线路通过对应的引线440将多个输入输出端口431A和431B与载体基板410的第二区域412中的由虚线限定的对应的区域电结合。
可以通过正常打线或倒打线的方式利用引线440将多个输入输出端口431A和431B与载体基板410电结合。优选地,可以采用倒打线的方式,以保证引线440与载体基板410之间基本垂直(即,引线440与载体基板410成大约90°的角度),如图7C和图8C所示。因此,可以防止在随后形成分隔槽的工艺中损坏引线440。另外,如图8B和8C所示,与不同的芯片的输入输出端口电结合的形成为弧线形状的引线的弧线高度可以不同从而在空间上将引线彼此分离,使得每条引线独立地传送相应的电信号。例如,将上面的芯片的输入输出端口431B与载体基板410电结合的引线的弧线高度可以高于将下面的芯片的输入输出端口431A与载体基板410电结合的引线的弧线高度。
如图9A至10B所示,可以在载体基板410上形成覆盖载体基板410的包封层450。包封层450可以将粘结层420A和420B、芯片430A和430B以及引线240包封以形成芯片封装件400。
如图11A至12B所示,可以在载体基板410中形成多个分隔槽460(即,按图中示出的虚线形成多个分隔槽460)。因此,多个分隔槽460可以将载体基板410分为多个子基板413和414。多个子基板413可以位于载体基板410的第一区域411中,多个子基板414可以位于载体基板410的第二区域412中。
可以采用诸如切割方法来形成多个分隔槽460。可以控制切割的深度,使得形成的多个分隔槽460的深度小于第一区域211的厚度并大于等于第二区域412的厚度,例如,可以控制切割的深度,从而切穿载体基板410的第二区域412但不切穿载体基板410的第一区域411。可选择地,可以控制切割深度,使得形成的分隔槽460的深度大于第二区域412的厚度,即,使得在载体基板410的第二区域上的包封层450的一部分被同时切除。因此,可以简化切割工艺、降低切割工艺所需精度,并保证子基板414彼此电隔离,从而提高芯片封装件400的可靠性。
因此,多个子基板414可以通过多个分隔槽460而被彼此电隔离,从而形成多个引脚。另外,可以在载体基板410的第一区域411中保留足够的余量,从而保证在切割过程中不会损坏位于第一区域411上的元件和/或层,并使得载体基板410的第一区域411上的元件和/或层不被暴露到外部。因此,提高了芯片封装件400的可靠性。图13示出了形成分隔槽之后的芯片封装件400的后视图。
由于芯片封装件400的上述结构,所以可以将第二区域411中的由虚线限定的区域(例如,与引线440电结合的区域)形成为多个引脚(即,子基板214)。另外,如图14A所示,可以在载体基板410的暴露的表面(即,没有被包封层450覆盖的表面)上形成镀膜层470。此外,如图14B所示,可以在芯片封装件400的表面打印标记。
图15是如上所述的根据本发明示例实施例的方法制造的芯片封装件的仿真透视图。下面的表1中列出了图15中的各个元件的尺寸,然而,应该理解的是,本发明不限于表1中列出的数据。
表1
  标号   描述   尺寸(微米)   公差(微米)
  A   载体基板的第二区域的厚度   150   +/-10
  B   载体基板的第一区域的厚度   400   +/-10
  C   第一粘结层的厚度   25   +/-5
  D   第一芯片的厚度   100   +/-10
  E   第二粘结层的厚度   25   +/-5
  F   第二芯片的厚度   100   +/-10
  G   与第二芯片电结合的引线弧度高度   100   +/-15
  H   引线弧度到芯片封装件表面距离   Min.75   --
通过上面参照附图的描述,可以将芯片封装件的载体基板用作引脚。因此,根据本发明示例实施例的芯片封装件及其制造方法可以提供一种增加了引脚数量、提高了可靠性、简化了制造工艺并降低了制造成本的芯片封装件及其制造方法。另外,由于载体基板的突起结构,因此保护了芯片封装件中的元件和/或层不受封装工艺和/或外部环境的影响。
虽然已经在上面具体地示出和描述了本发明的示例实施例,但是本领域普通技术人员应该理解的是,在不脱离本发明由权利要求限定的精神和范围的情况下,可以在本发明中做出形式和细节上的改变。

Claims (17)

1、一种芯片封装件,包括:
具有第一区域和环绕第一区域的第二区域的载体基板,第一区域的厚度大于第二区域的厚度,并在该载体基板一面形成多个分隔槽,以将所述载体基板的第二区域分为多个子基板;
设置在所述载体基板第一区域上通过粘结层粘结的芯片,该芯片具有输入输出端口;
用于将所述芯片的输入输出端口与所述载体基板电结合的多条引线;
覆盖在所述载体基板上的包封层,以用于包封所述的芯片和多条引线。
2、如权利要求1所述的芯片封装件,其中,所述多个分隔槽的深度大于第二区域的厚度并小于第一区域的厚度。
3、如权利要求1所述的芯片封装件,其中,所述多条引线将芯片的输入输出端口分别与第二区域中的子基板电结合。
4、如权利要求1所述的芯片封装件,其中,所述结合于载体基板的多条引线端与载体基板形成预定的角度,以防在形成多个分隔槽时损坏所述多条引线。
5、如权利要求1所述的芯片封装件,其中,载体基板由通用引线框架材料形成。
6、如权利要求1所述的芯片封装件,其中,还包括形成在载体基板的没有被包封层覆盖的表面上的镀膜层。
7、如权利要求1所述的芯片封装件,其中,所述芯片为通过粘结层叠加粘结的多个芯片。
8、如权利要求7所述的芯片封装件,其中,引线为弧线形状,并且与上面的芯片的输入输出端口电结合的引线的弧线高度高于与下面的芯片的输入输出端口电结合的引线的弧线高度。
9、一种制造芯片封装件的方法,所述方法包括的步骤如下:
设置具有第一区域和环绕第一区域的第二区域的载体基板,所述第一区域的厚度大于第二区域的厚度;
在所述载体基板的第一区域上设置通过粘结层粘结的具有输入输出端口的芯片;
设置多条引线,以将所述芯片的输入输出端口与所述载体基板电结合;
形成覆盖所述载体基板一面的包封层,以包封所述的芯片和多条引线;
所述载体基板另一面形成多个分隔槽,以将所述载体基板的第二区域分为多个子基板。
10、如权利要求9所述的方法,其中,所述形成多个分隔槽的步骤为通过切割的方法形成多个分隔槽,并且分隔槽的深度形成为大于第二区域的厚度并小于第一区域的厚度。
11、如权利要求9所述的方法,其中,所述设置多条引线的步骤为将所述多条引线分别与所述芯片的输入输出端口及所述载体基板的第二区域电结合。
12、如权利要求9所述的方法,其中,所述设置芯片的步骤为控制所述芯片的边缘和所述载体基板的第一区域的边缘的距离,以确定芯片的位置。
13、如权利要求9或权利要求11所述的方法,其中,所述设置多条引线的步骤为采用正常打线或倒打线的方法将所述多条引线分别与芯片的输入输出端口及所述载体基板电结合。
14、如权利要求13所述的方法,其中,当采用倒打线的方法时,将电结合于载体基板的多条引线端设置为与所述载体基板形成预定的角度,以防在形成多个分隔槽时损坏所述多条引线。
15、如权利要求9所述的方法,其中,还包括使用电镀的方法在载体基板的没有被包封层覆盖的表面上形成镀膜层。
16、如权利要求9所述的方法,其中,所述设置芯片的步骤进一步包括通过粘结层叠加粘结多个芯片。
17、如权利要求16所述的方法,其中,引线形成为弧线形状,并且与上面的芯片的输入输出端口电结合的引线的弧线高度高于与下面的芯片的输入输出端口电结合的引线的弧线高度。
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105047569A (zh) * 2015-06-30 2015-11-11 南通富士通微电子股份有限公司 一种半导体封装方法
CN105140201A (zh) * 2015-06-30 2015-12-09 南通富士通微电子股份有限公司 一种具有万用型封装金属片的半导体封装件及打线工艺
CN105140205A (zh) * 2015-06-30 2015-12-09 南通富士通微电子股份有限公司 一种双面散热的半导体叠层封装结构
US10944046B2 (en) * 2017-09-04 2021-03-09 Rohm Co., Ltd. Semiconductor device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW544883B (en) * 2001-05-11 2003-08-01 Hitachi Ltd Manufacturing method of semiconductor device
CN1735963A (zh) * 2003-01-15 2006-02-15 先进互联技术有限公司 具有局部预制图形化引线框架的半导体封装及其制造方法
JP3913397B2 (ja) * 1999-03-30 2007-05-09 三洋電機株式会社 半導体装置の製造方法
JP3947750B2 (ja) * 2005-07-25 2007-07-25 株式会社三井ハイテック 半導体装置の製造方法及び半導体装置
JP3965813B2 (ja) * 1999-01-26 2007-08-29 松下電器産業株式会社 ターミナルランドフレームの製造方法
CN101083244A (zh) * 2006-01-19 2007-12-05 尔必达存储器股份有限公司 半导体封装及制造方法和衬底和半导体器件及制造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3965813B2 (ja) * 1999-01-26 2007-08-29 松下電器産業株式会社 ターミナルランドフレームの製造方法
JP3913397B2 (ja) * 1999-03-30 2007-05-09 三洋電機株式会社 半導体装置の製造方法
TW544883B (en) * 2001-05-11 2003-08-01 Hitachi Ltd Manufacturing method of semiconductor device
CN1735963A (zh) * 2003-01-15 2006-02-15 先进互联技术有限公司 具有局部预制图形化引线框架的半导体封装及其制造方法
JP3947750B2 (ja) * 2005-07-25 2007-07-25 株式会社三井ハイテック 半導体装置の製造方法及び半導体装置
CN101083244A (zh) * 2006-01-19 2007-12-05 尔必达存储器股份有限公司 半导体封装及制造方法和衬底和半导体器件及制造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105047569A (zh) * 2015-06-30 2015-11-11 南通富士通微电子股份有限公司 一种半导体封装方法
CN105140201A (zh) * 2015-06-30 2015-12-09 南通富士通微电子股份有限公司 一种具有万用型封装金属片的半导体封装件及打线工艺
CN105140205A (zh) * 2015-06-30 2015-12-09 南通富士通微电子股份有限公司 一种双面散热的半导体叠层封装结构
CN105047569B (zh) * 2015-06-30 2018-02-27 通富微电子股份有限公司 一种半导体封装方法
CN105140201B (zh) * 2015-06-30 2018-06-05 通富微电子股份有限公司 一种具有万用型封装金属片的半导体封装件及打线工艺
US10944046B2 (en) * 2017-09-04 2021-03-09 Rohm Co., Ltd. Semiconductor device

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