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CN101651125B - Light-emitting diode base structure with embedded capacitor - Google Patents

Light-emitting diode base structure with embedded capacitor Download PDF

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CN101651125B
CN101651125B CN2008101346410A CN200810134641A CN101651125B CN 101651125 B CN101651125 B CN 101651125B CN 2008101346410 A CN2008101346410 A CN 2008101346410A CN 200810134641 A CN200810134641 A CN 200810134641A CN 101651125 B CN101651125 B CN 101651125B
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emitting diode
base structure
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embedded
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CN101651125A (en
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陈明鸿
温士逸
陈景宜
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Hailier Co ltd
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Abstract

The invention relates to a light-emitting diode seat structure with an embedded capacitor, which comprises: it includes: a body; at least one pair of metal layers; at least one dielectric layer; and at least two conductive paths. The body is an insulating base, the metal layer is arranged in the body, the dielectric layer is formed between the pair of metal layers to form the embedded capacitor, and the conductive channels are respectively electrically connected with the metal layer. When the LED base structure is electrically connected with a resistor, a resistor-capacitor delay circuit can be formed, and the effect of phase delay can be generated when an alternating current power supply is used, so that the on-time of one of two groups of LED groups which are connected in parallel can be controlled, and the problem of LED flicker when the alternating current power supply is used can be improved.

Description

具有埋入式电容的发光二极管座体结构Light-emitting diode base structure with embedded capacitor

技术领域technical field

本发明涉及一种具有埋入式电容的发光二极管(即二极体,下文均称为二极管)座体结构,特别是涉及一种应用于使用交流电源作为电源的具有埋入式电容的发光二极管座体结构。The present invention relates to a light-emitting diode (i.e. diode, hereinafter referred to as diode) body structure with embedded capacitors, in particular to a light-emitting diode with embedded capacitors that is applied to an AC power supply as a power source Seat structure.

背景技术Background technique

由于发光二极管技术发展迅速且趋于成熟,并且发光二极管具有体积小、耗电量低、反应速率快、寿命长与耐震性佳等优点,使得发光二极管逐渐取代了传统卤素灯、日光灯管等,俨然已成为未来照明装置中一种新兴的光源。Due to the rapid development and maturity of light-emitting diode technology, and light-emitting diodes have the advantages of small size, low power consumption, fast response rate, long life and good shock resistance, light-emitting diodes have gradually replaced traditional halogen lamps and fluorescent tubes. It has become an emerging light source in future lighting devices.

但由于发光二极管的设计为仅在顺向偏压时才得以被电性导通而发光,使得若是使用市电的交流电源驱动发光二极管时,由于交流电源的周期性,因此使得发光二极管出现闪烁的现象,而产生应用上的困难,所以目前大部分发光二极管皆被限制于只能使用直流电源驱动点亮。However, since the light-emitting diode is designed to be electrically turned on and emit light only when it is forward biased, if the light-emitting diode is driven by the AC power of the mains, due to the periodicity of the AC power, the light-emitting diode will flicker. Phenomenon, resulting in application difficulties, so most of the light-emitting diodes are currently limited to only use DC power to drive light.

如中华民国发明第I287607号交流电用的发光二极管照明装置及其中的发光单元中所揭露的一种发光二极管照明装置,运用一交流电源为其电力供应源,而交流电源具有一正向电压及一反向电压,发光二极管照明装置包括:一发光单元,发光单元至少包括一第一发光二极管晶片及一第二发光二极管晶片,发光二极管晶片为并联且两者导通方向相反,正向电压是用以导通第一发光二极管晶片,反向电压是用以导通第二发光二极管晶片。For example, in the LED lighting device disclosed in the invention No. I287607 of the Republic of China, the LED lighting device for alternating current and the light-emitting unit therein, an AC power source is used as its power supply source, and the AC power source has a forward voltage and a Reverse voltage, the light emitting diode lighting device includes: a light emitting unit, the light emitting unit at least includes a first light emitting diode chip and a second light emitting diode chip, the light emitting diode chips are connected in parallel and the conduction directions of the two are opposite, the forward voltage is used to turn on the first light emitting diode chip, and the reverse voltage is used to turn on the second light emitting diode chip.

上述先前技术使用的二个发光二极管晶片以并联方式相连接,并使得二个发光二极管晶片导通方向相反,因此在输入交流电源时,二个发光二极管晶片将会轮流交替发光,达到可直接使用交流电源进行照明。The two LED chips used in the above-mentioned prior art are connected in parallel, and the conduction directions of the two LED chips are opposite. Therefore, when the AC power is input, the two LED chips will alternately emit light in turn, so that they can be used directly. AC power for lighting.

图1A为现有习知的发光二极管座体结构输入交流电源时的交流电源AC与临界电压Vth关系图。当发光二极管工作时,实际上驱动发光二极管的电压值必须要大于发光二极管的临界电压Vth,才得以驱动发光二极管发光。因此当交流电源的电压极性切换时,需经历一等待时间Tth,等待电压上升达到临界电压Vth,发光二极管才会被点亮而发光。FIG. 1A is a relationship diagram between an AC power source AC and a critical voltage Vth when an AC power source is input to a conventional light-emitting diode base structure. When the light-emitting diode is working, in fact, the voltage value for driving the light-emitting diode must be greater than the critical voltage Vth of the light-emitting diode to drive the light-emitting diode to emit light. Therefore, when the voltage polarity of the AC power source is switched, it takes a waiting time Tth to wait for the voltage to rise to the critical voltage Vth before the LED is turned on and emits light.

图1B为现有习知的发光二极管座体结构输入交流电源AC时的发光二极管发光时序图。当使用二发光二极管LED1、LED2发光时,其发光时间T1、T2中会有一等待时间Tth,因此当二发光二极管LED1、LED2交替发光时会产生光不连续现象,而导致闪烁的问题,限制了发光二极管LED1、LED2应用在交流电源AC环境下的应用。FIG. 1B is a light emitting sequence diagram of the light emitting diode when the AC power supply AC is input to the conventional light emitting diode base structure. When two light-emitting diodes LED1 and LED2 are used to emit light, there will be a waiting time Tth in the light-emitting time T1 and T2. Therefore, when the two light-emitting diodes LED1 and LED2 alternately emit light, light discontinuity will occur, resulting in the problem of flickering, which limits the The application of the light-emitting diodes LED1 and LED2 in the AC environment of the AC power supply.

由此可见,上述现有的发光二极管座体结构在结构与使用上,显然仍存在有不便与缺陷,而亟待加以进一步改进。为了解决上述存在的问题,相关厂商莫不费尽心思来谋求解决之道,但长久以来一直未见适用的设计被发展完成,而一般产品又没有适切结构能够解决上述问题,此显然是相关业者急欲解决的问题。因此如何能创设一种新型的具有埋入式电容的发光二极管座体结构,实属当前重要研发课题之一,亦成为当前业界极需改进的目标。It can be seen that the above-mentioned existing light-emitting diode base structure obviously still has inconvenience and defects in structure and use, and needs to be further improved urgently. In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and the general products do not have a suitable structure to solve the above-mentioned problems. This is obviously the relevant industry. urgent problem to be solved. Therefore, how to create a new type of light-emitting diode base structure with embedded capacitors is one of the current important research and development topics, and it has also become a goal that the industry needs to improve.

有鉴于上述现有的发光二极管座体结构存在的缺陷,本发明人基于从事此类产品设计制造多年丰富的实务经验及专业知识,并配合学理的运用,积极加以研究创新,以期创设一种新型的具有埋入式电容的发光二极管座体结构,能够改进一般现有的发光二极管座体结构,使其更具有实用性。经过不断的研究、设计,并经过反复试作样品及改进后,终于创设出确具实用价值的本发明。In view of the defects of the above-mentioned existing light-emitting diode base structure, the inventors actively researched and innovated based on years of rich practical experience and professional knowledge engaged in the design and manufacture of such products, and cooperated with the application of academic theories, in order to create a new type of light-emitting diode. The light-emitting diode base structure with embedded capacitors can improve the general existing light-emitting diode base structure and make it more practical. Through continuous research, design, and after repeated trial samples and improvements, the present invention with practical value is finally created.

发明内容Contents of the invention

本发明的目的在于,克服现有的发光二极管座体结构存在的缺陷,而提供一种新型的具有埋入式电容的发光二极管座体结构,所要解决的技术问题是使其在发光二极管的本体中埋设两金属层,并于其中形成介电层而构成埋入式电容,藉由埋入式电容可与外部电阻结合,且形成电阻-电容延迟电路。若是将多个发光二极管结合于发光二极管座体结构且使用交流电源时,原本因交流电源的电压极性变换而产生闪烁的问题,将可藉由使用延迟电路分别控制某些发光二极管的起始驱动时间,进而改善发光二极管闪烁的现象。The object of the present invention is to overcome the defects existing in the existing light-emitting diode body structure, and provide a new type of light-emitting diode body structure with embedded capacitors. The technical problem to be solved is to make it Two metal layers are buried in the middle, and a dielectric layer is formed therein to form an embedded capacitor. The embedded capacitor can be combined with an external resistor to form a resistor-capacitor delay circuit. If a plurality of light emitting diodes are combined in the structure of the light emitting diode body and an AC power source is used, the flickering problem caused by the voltage polarity change of the AC power source can be controlled separately by using a delay circuit. driving time, thereby improving the flickering phenomenon of the LED.

本发明的目的及解决其技术问题是采用以下技术方案来实现的。依据本发明提出的一种具有埋入式电容的发光二极管座体结构,其特征在于其包括:一本体,其为一绝缘基座;至少一对金属层,其设置于该本体内;至少一介电层,其形成于该对金属层之间;以及至少二导电通道,其分别电性连接该些金属层。The purpose of the present invention and the solution to its technical problems are achieved by adopting the following technical solutions. According to the present invention, a light-emitting diode base structure with embedded capacitors is characterized in that it includes: a body, which is an insulating base; at least a pair of metal layers, which are arranged in the body; at least one A dielectric layer is formed between the pair of metal layers; and at least two conductive channels are respectively electrically connected to the metal layers.

本发明的目的及解决其技术问题还可采用以下技术措施进一步实现。The purpose of the present invention and its technical problems can also be further realized by adopting the following technical measures.

前述的具有埋入式电容的发光二极管座体结构,其中所述的本体由多个陶瓷层堆叠形成。In the aforementioned light-emitting diode base structure with embedded capacitors, the body is formed by stacking multiple ceramic layers.

前述的具有埋入式电容的发光二极管座体结构,其中所述的本体具有一凹槽。In the aforementioned light-emitting diode base structure with embedded capacitors, the body has a groove.

前述的具有埋入式电容的发光二极管座体结构,其中所述的本体的材质为一氧化铝、一石英、一二氧化硅、一锆酸钙或一玻璃陶瓷。In the aforementioned light-emitting diode base structure with embedded capacitors, the material of the body is aluminum oxide, quartz, silicon dioxide, calcium zirconate or glass ceramics.

前述的具有埋入式电容的发光二极管座体结构,其中所述的介电层的材质为一二氧化硅、一钛酸钡或一陶瓷层。In the aforementioned light-emitting diode base structure with embedded capacitors, the material of the dielectric layer is silicon dioxide, barium titanate or a ceramic layer.

前述的具有埋入式电容的发光二极管座体结构,其其进一步具有至少一对电极,且每一该电极的一第一端部裸露于该本体的一凹槽底面,又每一该电极的一第二端部埋设于该本体中,且其中一该第二端部与一该导电通道电性连接。The aforementioned light-emitting diode base structure with embedded capacitors further has at least one pair of electrodes, and a first end of each electrode is exposed on a bottom surface of a groove of the body, and each of the electrodes A second end is buried in the body, and one of the second end is electrically connected with a conductive channel.

本发明与现有技术相比具有明显的优点和有益效果。借由上述技术方案,本发明具有埋入式电容的发光二极管座体结构至少具有下列优点及有益效果:Compared with the prior art, the present invention has obvious advantages and beneficial effects. By virtue of the above-mentioned technical solutions, the light-emitting diode base structure with embedded capacitors of the present invention has at least the following advantages and beneficial effects:

1、发光二极管座体结构具有内埋式电容,因此无须再接额外的电容元件。1. The light-emitting diode base structure has a built-in capacitor, so there is no need to connect additional capacitor components.

2、电容在制作发光二极管座体结构制程中埋设,使得成本降低且电容量可依需求设计。2. Capacitors are buried in the manufacturing process of the light-emitting diode base structure, which reduces the cost and the capacitance can be designed according to requirements.

3、因具有埋入式电容,将使得发光二极管座体结构应用范围更为广泛。3. Due to the embedded capacitor, the application range of the light-emitting diode base structure will be wider.

综上所述,本发明为一种具有埋入式电容的发光二极管座体结构,其包括:本体;至少一对金属层;至少一介电层;以及至少二导电通道。本体为绝缘基座,且金属层设置在本体中,且介电层形成于此对金属层间,而成为埋入式电容,又导电通道分别与金属层电性连接。当发光二极管座体结构再与一电阻电性连接时,即可形成电阻-电容延迟电路,且可在使用交流电源时产生相位延迟的功效,用以控制两组相互并联的发光二极管组其中一组的开启时间,将可改善使用交流电源时发光二极管闪烁的问题。本发明具有上述诸多优点及实用价值,其不论在产品结构或功能上皆有较大改进,在技术上有显著的进步,并产生了好用及实用的效果,且较现有的发光二极管座体结构具有增进的突出功效,从而更加适于实用,诚为一新颖、进步、实用的新设计。To sum up, the present invention is an LED base structure with embedded capacitors, which includes: a body; at least one pair of metal layers; at least one dielectric layer; and at least two conductive channels. The main body is an insulating base, and the metal layer is disposed in the main body, and the dielectric layer is formed between the pair of metal layers to form an embedded capacitor, and the conductive channels are respectively electrically connected to the metal layer. When the light-emitting diode base structure is electrically connected with a resistor, a resistance-capacitance delay circuit can be formed, and the effect of phase delay can be generated when using an AC power supply to control one of the two parallel-connected light-emitting diode groups. The turn-on time of the group can improve the problem of LED flickering when using AC power. The present invention has the above-mentioned many advantages and practical value, it has great improvement no matter in product structure or function, has remarkable progress in technology, and has produced easy-to-use and practical effect, and compared with existing light-emitting diode holder The body structure has enhanced outstanding functions, so it is more suitable for practical use, and it is a novel, progressive and practical new design.

上述说明仅是本发明技术方案的概述,为了能够更清楚了解本发明的技术手段,而可依照说明书的内容予以实施,并且为了让本发明的上述和其他目的、特征和优点能够更明显易懂,以下特举较佳实施例,并配合附图,详细说明如下。The above description is only an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention, it can be implemented according to the contents of the description, and in order to make the above and other purposes, features and advantages of the present invention more obvious and understandable , the following preferred embodiments are specifically cited below, and are described in detail as follows in conjunction with the accompanying drawings.

附图说明Description of drawings

图1A为现有习知的发光二极管座体结构输入交流电源时的交流电源与临界电压关系图。FIG. 1A is a diagram showing the relationship between the AC power and the critical voltage when the AC power is input to the conventional light-emitting diode base structure.

图1B为现有习知的发光二极管座体结构输入交流电源时的发光二极管发光时序图。FIG. 1B is a timing diagram of light emitting diodes when the conventional light emitting diode base structure is input with AC power.

图2为本发明的一种具有埋入式电容的发光二极管座体结构实施例图。FIG. 2 is a diagram of an embodiment of the structure of a light-emitting diode base with embedded capacitors according to the present invention.

图3为沿图2中A-A剖面线的剖视实施例图一。Fig. 3 is a cross-sectional embodiment diagram 1 along the section line A-A in Fig. 2 .

图4为沿图2中A-A剖面线的剖视实施例图二。Fig. 4 is a second cross-sectional embodiment diagram along the section line A-A in Fig. 2 .

图5A为本发明的一种具有埋入式电容的发光二极管座体结构结合发光二极管实施例。FIG. 5A is an embodiment of an LED base structure with embedded capacitors combined with LEDs according to the present invention.

图5B为图5A中电路结构的等效电路图。FIG. 5B is an equivalent circuit diagram of the circuit structure in FIG. 5A.

图5C为图5B输入交流电源时的交流电源与临界电压关系图。FIG. 5C is a graph showing the relationship between the AC power and the critical voltage when the AC power is input in FIG. 5B .

图5D为图5B输入交流电源时的发光二极管发光时序图。FIG. 5D is a timing diagram of light emitting diodes in FIG. 5B when AC power is input.

10:具有埋入式电容的发光二极管座体结构10: Light-emitting diode base structure with embedded capacitors

11:本体                       12:金属层11: Body 12: Metal layer

13:介电层                     14:导电通道13: Dielectric layer 14: Conductive channel

15:凹槽                       16:电极15: Groove 16: Electrode

161:第一端部                  162:第二端部161: first end 162: second end

17:电源电极                   Ci:埋入式电容17: Power electrode Ci: Embedded capacitor

AC:交流电源                   R:电阻AC: AC Power R: Resistance

LED1、LED-2、LED3、LED-4:发光二极管LED1, LED-2, LED3, LED-4: Light-emitting diodes

T1、T2、T3、T4:发光时间       Tth:等待时间T1, T2, T3, T4: Lighting time Tth: Waiting time

Vth:临界电压                  T:延迟时间Vth: critical voltage T: delay time

具体实施方式Detailed ways

为更进一步阐述本发明为达成预定发明目的所采取的技术手段及功效,以下结合附图及较佳实施例,对依据本发明提出的具有埋入式电容的发光二极管座体结构其具体实施方式、结构、特征及其功效,详细说明如后。In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, the specific implementation of the light-emitting diode base structure with embedded capacitors proposed according to the present invention will be described below in conjunction with the accompanying drawings and preferred embodiments. , structure, feature and effect thereof, detailed description is as follows.

有关本发明的前述及其他技术内容、特点及功效,在以下配合参考图式的较佳实施例的详细说明中将可清楚呈现。通过具体实施方式的说明,当可对本发明为达成预定目的所采取的技术手段及功效得一更加深入且具体的了解,然而所附图式仅是提供参考与说明之用,并非用来对本发明加以限制。The aforementioned and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of preferred embodiments with reference to the drawings. Through the description of the specific implementation mode, when the technical means and functions adopted by the present invention to achieve the predetermined purpose can be obtained a deeper and more specific understanding, but the accompanying drawings are only for reference and description, and are not used to explain the present invention be restricted.

图2为本发明的一种具有埋入式电容Ci的发光二极管座体结构10实施例图。图3为沿图2中A-A剖面线的剖视实施例图一。图4为沿图2中A-A剖面线的剖视实施例图二。图5A为本发明的一种具有埋入式电容Ci的发光二极管座体结构10结合发光二极管LED1、LED-2、LED3、LED-4实施例。图5B为图5A中电路结构的等效电路图。图5C为图5B输入交流电源AC时的交流电源AC与临界电压Vth关系图。图5D为图5B输入交流电源AC时的发光二极管LED1、LED-2、LED3、LED-4发光时序图。FIG. 2 is a diagram of an embodiment of an LED base structure 10 with an embedded capacitor Ci according to the present invention. Fig. 3 is a cross-sectional embodiment diagram 1 along the section line A-A in Fig. 2 . Fig. 4 is a second cross-sectional embodiment diagram along the section line A-A in Fig. 2 . FIG. 5A is an embodiment of an LED base structure 10 with embedded capacitor Ci combined with LEDs LED1 , LED-2 , LED3 , and LED-4 according to the present invention. FIG. 5B is an equivalent circuit diagram of the circuit structure in FIG. 5A. FIG. 5C is a graph showing the relationship between the AC power supply AC and the critical voltage Vth when the AC power supply AC is input in FIG. 5B . FIG. 5D is a timing diagram of light emitting diodes LED1 , LED- 2 , LED3 , and LED- 4 in FIG. 5B when AC power is input.

请参阅图2与图3所示,本实施例为一种具有埋入式电容Ci的发光二极管座体结构10,包括:一本体11;至少一对金属层12;至少一介电层13;以及至少二导电通道14。Please refer to FIG. 2 and FIG. 3 , the present embodiment is a light emitting diode base structure 10 with embedded capacitance Ci, including: a body 11; at least one pair of metal layers 12; at least one dielectric layer 13; And at least two conductive channels 14 .

上述的本体11,其构成了具有埋入式电容Ci的发光二极管座体结构10的封装,且本体11为一绝缘基座,其中一实施态样可以由多个陶瓷层堆叠而成,且本体11的材质可以为一氧化铝、一石英、一二氧化硅、一锆酸钙或一陶瓷。The above-mentioned body 11 constitutes the package of the light-emitting diode base structure 10 with embedded capacitance Ci, and the body 11 is an insulating base, and one embodiment can be formed by stacking a plurality of ceramic layers, and the body The material of 11 can be aluminum oxide, quartz, silicon dioxide, calcium zirconate or ceramics.

本体11除了可含有多个陶瓷层之外,亦会将金属层12、介电层13以及导电通道14包覆在内。且本体11形成有一凹槽15作为固晶区,当本体11与发光二极管结合时,凹槽15可用以容置多个发光二极管LED1、LED-2、LED3、LED-4。The body 11 not only includes a plurality of ceramic layers, but also covers the metal layer 12 , the dielectric layer 13 and the conductive channel 14 . And the main body 11 is formed with a groove 15 as a die-bonding area. When the main body 11 is combined with the LEDs, the groove 15 can accommodate a plurality of LEDs LED1, LED-2, LED3, and LED-4.

请参阅图3与图4所示,金属层12,设置于本体11内,且具有埋入式电容Ci的发光二极管座体结构10包括了一对或两对金属层12。每一对金属层12可埋设于本体11中的任一位置,又每一对金属层12中的两片金属层12为上下平行设置。当多个陶瓷层堆叠形成本体11时,将可轻易的将金属层12依序置入不同的陶瓷层间,以形成埋入式电容Ci。Please refer to FIG. 3 and FIG. 4 , the metal layer 12 is disposed in the body 11 , and the LED base structure 10 with the embedded capacitor Ci includes one or two pairs of metal layers 12 . Each pair of metal layers 12 can be embedded in any position in the body 11 , and the two metal layers 12 in each pair of metal layers 12 are vertically arranged in parallel. When multiple ceramic layers are stacked to form the body 11 , the metal layer 12 can be easily placed between different ceramic layers in order to form the embedded capacitor Ci.

上述的介电层13,形成于每一对金属层12之间。因此当具有埋入式电容Ci的发光二极管座体结构10中埋设有一对或两对金属层12时,本体11中可以分别具有一或二介电层13,用以使得每一对金属层12中的两金属层12电性隔离。且介电层13的材质可使用一氧化铝、一石英、一二氧化硅、一锆酸钙或一陶瓷。当介电层13设置于二金属层12之间时,使得发光二极管座体结构中形成了金属层12-介电层13-金属层12的埋入式电容Ci。且当介电层使用与本体相同材质时,在制程上将更具有效率。The above-mentioned dielectric layer 13 is formed between each pair of metal layers 12 . Therefore, when one or two pairs of metal layers 12 are embedded in the light emitting diode base structure 10 with embedded capacitance Ci, the body 11 may have one or two dielectric layers 13 respectively, so that each pair of metal layers 12 The two metal layers 12 are electrically isolated. And the material of the dielectric layer 13 can be aluminum oxide, quartz, silicon dioxide, calcium zirconate or ceramics. When the dielectric layer 13 is disposed between the two metal layers 12 , the embedded capacitance Ci of the metal layer 12 -dielectric layer 13 -metal layer 12 is formed in the light emitting diode base structure. And when the dielectric layer is made of the same material as the body, the process will be more efficient.

上述的导电通道14,形成于本体11中,且可用以分别与每一金属层12电性连接,以作为埋入式电容Ci的电极。当具有埋入式电容Ci的发光二极管座体结构10中埋设有一对金属层12时,本体11中可以具有至少二导电通道14,用以分别与每一金属层12电性连接。同样的,当本体11中埋设有两对金属层12时,将具有至少四导电通道14分别与每一金属层12电性连接。当本体11中具有一个以上的埋入式电容Ci时,可藉由导电通道14的设置,以并联或串联方式连接,用以调控总电容值。The above-mentioned conductive channel 14 is formed in the body 11 and can be used to electrically connect with each metal layer 12 respectively, so as to serve as an electrode of the embedded capacitor Ci. When a pair of metal layers 12 are buried in the LED base structure 10 with embedded capacitor Ci, the body 11 may have at least two conductive channels 14 for electrically connecting with each metal layer 12 respectively. Likewise, when two pairs of metal layers 12 are embedded in the body 11 , at least four conductive channels 14 are electrically connected to each metal layer 12 respectively. When there is more than one embedded capacitor Ci in the body 11 , they can be connected in parallel or in series by setting the conductive channel 14 to adjust the total capacitance value.

有关埋入式电容Ci所产生的电容值,可经由以下方程式计算之:The capacitance value generated by the embedded capacitor Ci can be calculated by the following equation:

C=(ε0×A)/DC=(ε0×A)/D

其中,C为埋入式电容Ci电容值,ε0为真空中介电常数,A为每一片金属层12面积以及D为两片金属层12间距离。举例来说,当两片金属层12距离越近或金属层12具有较大面积时,将可累积较多的电荷,使得埋入式电容Ci产生较大的电容值。反之,若金属层12距离越远或金属层12面积较小,则电荷累积数量少,使得埋入式电容Ci形成较小的电容值。Wherein, C is the capacitance value of the embedded capacitor Ci, ε0 is the dielectric constant in vacuum, A is the area of each metal layer 12 and D is the distance between two metal layers 12 . For example, when the distance between the two metal layers 12 is closer or the metal layer 12 has a larger area, more charges can be accumulated, so that the embedded capacitor Ci generates a larger capacitance value. Conversely, if the distance between the metal layers 12 is farther or the area of the metal layer 12 is smaller, the accumulated charge quantity is smaller, so that the embedded capacitor Ci forms a smaller capacitance value.

除此之外,具有埋入式电容Ci的发光二极管座体结构10又可以进一步具有至少一对电极16,且每一电极16具有一第一端部161及一第二端部162。每一第一端部161裸露于本体11的凹槽15底面用以提供打线时使用,且每一第二端部162则埋设于本体11中,其中一第二端部162藉由其中一导电通道14与埋入式电容Ci中的其中一金属层12电性连接。又其中一导电通道14将与外部电源电极17相连接,以提供电源驱动埋入式电容Ci的发光二极管座体结构10。In addition, the LED base structure 10 with the embedded capacitor Ci may further have at least one pair of electrodes 16 , and each electrode 16 has a first end portion 161 and a second end portion 162 . Each first end portion 161 is exposed on the bottom surface of the groove 15 of the body 11 for wire bonding, and each second end portion 162 is embedded in the body 11, and one of the second end portions 162 is connected by one of the The conductive channel 14 is electrically connected to one of the metal layers 12 in the embedded capacitor Ci. And one of the conductive channels 14 is connected to an external power electrode 17 to provide power to drive the LED base structure 10 of the embedded capacitor Ci.

为了充分说明本实施例的功效,特举下列应用例加以说明:In order to fully illustrate the efficacy of this embodiment, the following application examples are given for illustration:

请参阅图5A及图5B所示,当有四颗发光二极管LED1、LED-2、LED3、LED-4固晶于具有埋入式电容Ci的发光二极管座体结构10时,四颗发光二极管LED1、LED-2、LED3、LED-4将容置于本体11的凹槽15中。且形成两组相互并联的发光二极管组,又每一发光二极管组皆由一正向导通的发光二极管LED1、LED3与一负向导通的发光二极管LED-2、LED-4所构成。Please refer to FIG. 5A and FIG. 5B, when there are four light-emitting diodes LED1, LED-2, LED3, and LED-4 solidified in the light-emitting diode base structure 10 with embedded capacitor Ci, the four light-emitting diodes LED1 , LED-2, LED3, LED-4 will be accommodated in the groove 15 of the body 11 . And two groups of light emitting diode groups connected in parallel are formed, and each light emitting diode group is composed of a forward conducting light emitting diode LED1, LED3 and a negative conducting light emitting diode LED-2, LED-4.

当使用一交流电源AC时,其中一组发光二极管LED3、LED4与打线与其中一电极16的第一端部161电性连接。而其中一电极16的第二端部162又藉由其中一导电通道14与埋入式电容Ci的其中一金属层12电性相连,如此将使得其中一发光二极管组LED3、LED4与埋入式电容Ci电性相连。而另一组发光二极管LED1、LED2则未与埋入式电容Ci电性相连。When an AC power source is used, one group of LEDs LED3 , LED4 and the bonding wire are electrically connected to the first end 161 of one of the electrodes 16 . And the second end 162 of one of the electrodes 16 is electrically connected to one of the metal layers 12 of the embedded capacitor Ci through one of the conductive channels 14, so that one of the light-emitting diode groups LED3, LED4 and the embedded capacitor Ci will be connected electrically. The capacitors are electrically connected. The other group of light-emitting diodes LED1 and LED2 are not electrically connected to the embedded capacitor Ci.

藉由埋入式电容Ci与一电阻R结合之后,可以形成电阻R-电容延迟电路,又埋入式电容Ci的电容值可由金属层12的间距及面积加以调控,使得电阻R-电容延迟电路可藉由调控埋入式电容Ci的电容值,以产生不同的延迟相位,例如:45度、90度。After the embedded capacitor Ci is combined with a resistor R, a resistor R-capacitor delay circuit can be formed, and the capacitance value of the embedded capacitor Ci can be adjusted by the distance and area of the metal layer 12, so that the resistor R-capacitor delay circuit Different delay phases, such as 45 degrees and 90 degrees, can be generated by adjusting the capacitance value of the embedded capacitor Ci.

如图5C所示,当输入一交流电源AC至具有埋入式电容Ci的发光二极管座体结构10中时,其中未与电阻-电容延迟电路相连接的二个发光二极管LED1、LED-2,发光时间为T1、T2。而另外二个发光二极管LED3、LED-4由于与电阻-电容延迟电路串联的缘故,使得将经过延迟时间T之后,才被导通而发光,因此其发光时间将为T3、T4。As shown in FIG. 5C, when an AC power supply AC is input into the LED base structure 10 with embedded capacitor Ci, the two LEDs LED1 and LED-2 that are not connected to the resistor-capacitor delay circuit, The luminous time is T1, T2. The other two light-emitting diodes LED3 and LED-4 are connected in series with the resistor-capacitor delay circuit, so that they will be turned on to emit light after a delay time T, so their light-emitting time will be T3 and T4.

请参阅图5D所示,由于发光二极管LED1、LED-2的出光时间T1、T2与发光二极管LED3、LED-4的出光时间T3、T4相互配合,如此将可使得当任一发光二极管LED1、LED-2、LED3、LED-4处于等待时间Tth时,其它发光二极管LED1、LED-2、LED3、LED-4仍会持续发光,因此整体将呈现一恒亮状态。所以发光二极管LED1、LED-2、LED3、LED-4与具有埋入式电容Ci的发光二极管座体结构10结合后,将可改善使用交流电源AC时的闪烁现象。Please refer to Fig. 5D, since the light-emitting time T1, T2 of the light-emitting diodes LED1, LED-2 cooperates with the light-emitting time T3, T4 of the light-emitting diodes LED3, LED-4, so that when any of the light-emitting diodes LED1, LED -2. When LED3 and LED-4 are in the waiting time Tth, the other light-emitting diodes LED1, LED-2, LED3 and LED-4 will continue to emit light, so the whole will show a constant light state. Therefore, after the LEDs LED1, LED-2, LED3, and LED-4 are combined with the LED base structure 10 having the embedded capacitor Ci, the flickering phenomenon when using the AC power supply AC can be improved.

以上所述,仅是本发明的较佳实施例而已,并非对本发明作任何形式上的限制,虽然本发明已以较佳实施例揭露如上,然而并非用以限定本发明,任何熟悉本专业的技术人员,在不脱离本发明技术方案范围内,当可利用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例,但凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰,均仍属于本发明技术方案的范围内。The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any form. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Anyone familiar with this field Those skilled in the art, without departing from the scope of the technical solution of the present invention, can use the technical content disclosed above to make some changes or modify equivalent embodiments with equivalent changes, but all the content that does not depart from the technical solution of the present invention, according to the present invention Any simple modifications, equivalent changes and modifications made to the above embodiments by the technical essence still belong to the scope of the technical solutions of the present invention.

Claims (4)

1. light-emitting diode base structure with buried capacitor is characterized in that it comprises:
One body, it is an insulating base, and this body has a groove;
At least one pair of metal level, it is arranged in this body;
At least one dielectric layer, it is formed at this between the metal level;
At least two conductive channels, it electrically connects those metal levels respectively; And
At least one pair of electrode, an and first end of each this electrode is exposed to a groove floor of this groove, a second end of each this electrode is embedded in this body again, and wherein this second end and this conductive channel electrically connect.
2. the light-emitting diode base structure with buried capacitor according to claim 1 is characterized in that wherein said body is piled up by a plurality of ceramic layers to form.
3. the light-emitting diode base structure with buried capacitor according to claim 1, the material that it is characterized in that wherein said body are an aluminium oxide, a quartz, a silicon dioxide, a calcium zirconate or a glass ceramics.
4. the light-emitting diode base structure with buried capacitor according to claim 1, the material that it is characterized in that wherein said dielectric layer are a silicon dioxide, a barium titanate or a ceramic layer.
CN2008101346410A 2008-08-12 2008-08-12 Light-emitting diode base structure with embedded capacitor Expired - Fee Related CN101651125B (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1662130A (en) * 2004-02-26 2005-08-31 阿尔卑斯电气株式会社 Flexible printed circuit board
US20080061427A1 (en) * 2006-09-11 2008-03-13 Industrial Technology Research Institute Packaging structure and fabricating method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1662130A (en) * 2004-02-26 2005-08-31 阿尔卑斯电气株式会社 Flexible printed circuit board
US20080061427A1 (en) * 2006-09-11 2008-03-13 Industrial Technology Research Institute Packaging structure and fabricating method thereof

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