CN101649162A - Polishing solution used for chemical mechanical grounding - Google Patents
Polishing solution used for chemical mechanical grounding Download PDFInfo
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- CN101649162A CN101649162A CN200810041771A CN200810041771A CN101649162A CN 101649162 A CN101649162 A CN 101649162A CN 200810041771 A CN200810041771 A CN 200810041771A CN 200810041771 A CN200810041771 A CN 200810041771A CN 101649162 A CN101649162 A CN 101649162A
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- Prior art keywords
- nitrate
- polishing fluid
- metal
- salt
- fluid according
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a polishing solution used for chemical mechanical polishing, which contains water, abrasive particles and an oxidant, wherein the oxidant simultaneously contains a nitrate anda metal salt, the positive ions of the nitrate are metallic ions or non-metallic ions, and when the positive ions of the nitrate are the metallic ions, the positive ions of the metal salt is differentfrom the positive ions of the nitrate. The polishing solution can be effectively used for performing the chemical mechanical polishing on the metal tungsten in a semiconductor material by using the synergistic action between the nitrate and the metal salt, the concentration of the metallic ions which are contained in the polishing solution and is easy to cause pollutions to a CMP board and a device is low, the pollution to the CMP board is small, the components of the polishing solution are not deposited separately, and the polishing solution can also ensure the long-term stability of the quality and reduce CMP operating links.
Description
Technical field
The present invention relates to the polishing fluid in a kind of semiconductor fabrication process, be specifically related to a kind of polishing fluid that is used for cmp.
Background technology
Along with the continuous development of semiconductor technology, and the continuous increase of large-scale integrated circuit interconnection layer, it is particularly crucial that the planarization of conductive layer and insulating medium layer becomes.Twentieth century eighties, be considered to the effective means of present overall planarization by cmp (CMP) technology of IBM Corporation's initiative.
Cmp (CMP) is by chemical action, mechanical effect and these two kinds effect be combined intos.It is usually by a grinding stage that has polishing pad, and a grinding head that is used for carries chips is formed.Wherein grinding head is fixed chip, and the front with chip is pressed on the polishing pad then.When carrying out cmp, grinding head linearity on polishing pad moves or rotates along the direction of motion the same with grinding stage.Meanwhile, the slurries that contain abrasive are dripped on the polishing pad, and are tiled on the polishing pad because of centrifugation.Chip surface is realized overall planarization under machinery and chemical dual effect.
Main mechanism to metal level CMP is considered to: oxygenant is earlier with the oxidation on metal surface film forming, is that the abrasive of representative is removed this layer oxide film machinery with silicon-dioxide and aluminum oxide, produces new metallic surface and continues oxidizedly, and these two kinds effects are worked in coordination with and carried out.As the tungsten of one of CMP (cmp) object, under high current density, anti-electronic migration is good, do not form hillock, stress is low, and can form good ohmic contact with silicon, so can be used as the filler metal and the diffusion impervious layer of contact hole and interlayer hole.At the CMP of tungsten, oxygenant commonly used mainly contains the salt of ferrous metal, iodate, hydrogen peroxide etc.
1991, F.B.Kaufman etc. have reported that the Tripotassium iron hexacyanide is used for the CMP technology of tungsten (" ChemicalMechanical Polishing for Fabricating Patterned W Metal Features as ChipInterconnects ", Journal of the Electrochemical Society, Vol.138, No.11, November 1991).United States Patent (USP) 5340370 discloses a kind of prescription that is used for tungsten CMP, wherein contains the 0.1M Tripotassium iron hexacyanide, and 5% silicon oxide contains acetate simultaneously as the pH buffer reagent.United States Patent (USP) 5527423,6008119,6284151 grades disclose Fe (NO
3)
3, alumina system carries out the CMP method of tungsten.Wherein, the concentration of iron ion is higher, as United States Patent (USP) 5527423 used Fe (NO
3)
3Concentration 5%.Because iron ion has the tendency that generates oxide compound, so the lapping liquid that contains a large amount of iron ions exists serious pollution problem to the CMP board.Simultaneously, the existence of a large amount of iron ions also can cause ion to stain to polishing medium, changes the character of insulation layer, reduces the reliability of device.United States Patent (USP) 5980775,5958288,6068787 disclose with iron ion make catalyzer, hydrogen peroxide as oxidant carries out the tungsten CMP method.In this catalyst mechanism, the content of iron ion has been reduced to about 200ppm, still, because iron ion catalysis decomposing hydrogen dioxide solution so catalyzer will separately be deposited with oxygenant, was mixed before CMP.Therefore increased the operation link in producing, simultaneously and the lapping liquid instability of oxygenant after mixing, can not long-term storage.
Summary of the invention
Therefore, the technical problem to be solved in the present invention is exactly at existing polishing fluid above shortcomings, a kind of polishing fluid that is used for cmp is provided, it can effectively be used for the tungsten of chemo-mechanical polishing semiconductor material, the concentration that wherein contains easily the metal ion that CMP board and device are polluted is lower, pollution to the CMP board is less, and this polishing fluid is separately deposited without each component simultaneously, also can guarantee the character long-term stability.
The present invention solves the problems of the technologies described above the technical scheme that is adopted: a kind of polishing fluid that is used for cmp, contain water, abrasive grains and oxygenant, wherein, described oxygenant contains nitrate and metal-salt simultaneously, the positively charged ion of nitrate is metal ion or nonmetallic ion, when the positively charged ion of nitrate was metal ion, the positively charged ion of described metal-salt was different from the positively charged ion of described nitrate.
According to the present invention, polishing fluid of the present invention contains at least a nitrate and another kind of at least metal-salt.Wherein, described nitrate is the compound that nitrate ion and other ions are formed, and described other ions can be metal ions, also can be nonmetallic ions, as ammonium ion, quaternary ammonium salt cationic.In the nitrate of the solubility that is selected from main group and subgroup element that described nitrate is preferable one or more.Better be selected from ammonium nitrate, saltpetre and the quaternary ammonium nitrate one or more.What the content of described nitrate was preferable is weight percentage 0.02%～10%, and better is 1%～5%.
Wherein, described metal-salt is normal salt, acid salt, the subsalt of metal ion, and is preferable for being selected from but be not limited in nitrate, phosphoric acid salt, hydrochloride, carbonate, vitriol, sulfonate, oxymuriate, perchlorate, iodate, periodate, bromate, chromic salt, dichromate, manganate and the permanganate of metal one or more.Described metal-salt is preferable is selected from Ag, Co, Cr, Cu, Fe, Mo, Mn, Nb, Ni, Os, Pd, Ru, Sn, one or more in the salt of Ti, K, Na and V.Better be selected from Ag salt and the Fe salt one or both.What the content of described metal-salt was preferable is weight percentage 0.02%～2%, and better is 0.1%～0.5%.
Polishing fluid of the present invention contains nitrate and metal-salt simultaneously.When nitrate was the metal-salt of nitric acid, another component of this polishing fluid---metal salt component was necessary for the salt of another kind of metal, but can be the nitrate of this another kind metal; When nitrate was the non-metal salt of nitric acid, as the ammonium salt of nitric acid, quaternary ammonium salt etc., the metal salt component of this polishing fluid can be any salt of metal, comprises the nitrate of metal.Two or more above-mentioned nitrate and metal-salt can act synergistically, enhancing is to the removal speed of tungsten, thereby be implemented under the concentration of metal ions condition of the lower pollution that easily CMP board and device is caused and effectively remove the purpose of tungsten, and then reduce and pollute.What the nitrate that contains in the polishing fluid and the relation with contents of another kind of metal-salt were preferable is: nitrate 0.02～10wt%, metal-salt 0.02～2wt% simultaneously; That better is nitrate 1～5wt%, simultaneously metal-salt 0.1～0.5wt%.The chemical mechanical polishing liquid of the tungsten of the existing any on-catalytic system of the concentration ratio of metal-salt of the present invention is much lower, but can realize the effective removal to tungsten equally, has reduced in the polishing process metal ion to the pollution of polishing machine platform.And of the prior artly add the chemical mechanical polishing liquid of tungsten that iron ion is the catalyst system of representative with hydrogen peroxide, though wherein the concentration of metal-salt is lower than this patent, because the metal catalytic decomposing hydrogen dioxide solution, so each component of polishing fluid will separately be packed, remix before using uses inconvenient; And polishing fluid of the present invention need not, this also is one of advantage of the present invention.
According to the present invention, another component of polishing fluid of the present invention is an abrasive grains.Described abrasive grains is the abrasive grains of this area routine, the preferable SiO that is selected from
2, Al
2O
3, ZrO
2, CeO
2, SiC, Fe
2O
3, TiO
2And Si
3N
4In one or more.That the particle diameter of abrasive grains is preferable is 30～200nm, and that better is 50～120nm.The content of abrasive grains also is the conventional content of this area, and preferable is weight percentage 0.1%～10%, and better is 1%～5%.
According to the present invention, another component of polishing fluid of the present invention is a water.With the routine of this area, the content of described water is that the weight percent of supplying polishing fluid is 100%.
Polishing fluid of the present invention also can contain the conventional additives of other this area, as sterilant and tensio-active agent etc.
What the pH value of polishing fluid of the present invention was preferable is 1～7, and better is 2～5.Available pH regulator agent such as potassium hydroxide, ammoniacal liquor or nitric acid etc.
Polishing fluid of the present invention can prepare by this area ordinary method, as being made by following method: with the mentioned component uniform mixing, adopt the pH regulator agent to adjust the pH value to desirable value then.Agents useful for same of the present invention and raw material are all commercially available to be got.
Positive progressive effect of the present invention is: polishing fluid of the present invention can effectively be used for the tungsten of chemo-mechanical polishing semiconductor material, and it contains the metal ion that easily CMP board and device is polluted of low concentration, the pollution that forms is little, and this polishing fluid is separately deposited without each component, also can guarantee the character long-term stability, so polishing fluid of the present invention has a good application prospect at microelectronics such as semiconductor wafer chemically machinery polisheds.
Embodiment
Further specify the present invention with embodiment below, but the present invention is not limited.The experimental technique of unreceipted actual conditions in the following example, usually according to normal condition, or the condition of advising according to manufacturer.
Embodiment 1～27
Table 1 is the prescription of the polishing fluid of the present invention of embodiment 1～27.Press listed component and content thereof in the table 1, simply mix, surplus is a water, adopts potassium hydroxide, ammoniacal liquor and nitric acid to be adjusted to required pH value afterwards, promptly makes the polishing fluid of each embodiment.
The component and the content of table 1. embodiment 1～27 polishing fluid
Annotate: 1: sterilant PQ375 full name is: 1, and 3-dihydroxymethyl-5,5-dimethyl hydantion (glycolylurea)
2: the Dodecyl trimethyl ammonium chloride purposes is a tensio-active agent.
Further specify beneficial effect of the present invention below by effect embodiment.
Effect embodiment 1
Table 2 is prescriptions of contrast polishing fluid 1～2 and polishing fluid of the present invention 1～5.Press table 2 each composition of polishing fluid is mixed, surplus is a water, and employing KOH and nitric acid promptly make after regulating pH.
Polishing condition is: polishing machine platform is Logitech (Britain) 1PM52 type, 12 inches politex polishing pads (pad), 4cm*4cm square Wafer, grinding pressure 4psi, 70 rev/mins of grinding stage (polishingtable) rotating speeds, 150 rev/mins of grinding head (carrier) rotation rotating speeds, polishing fluid rate of addition 100ml/min.The polishing object is: tungsten (tungsten) wafer.
The removal speed of table 2. contrast polishing fluid 1～2 and 1～5 pair of tungsten of polishing fluid of the present invention
By the result of contrast polishing fluid in the table 21,2 and polishing fluid of the present invention 1 as seen, there is synergy between saltpetre and the iron nitrate, can improves tungsten and remove speed.By the result of polishing fluid 1,2 as seen, the iron nitrate of saltpetre and lower concentration is not obvious to the increase of the removal speed of tungsten, and with the iron nitrate effect of relative high density slightly, removal speed to tungsten increases obviously, show between saltpetre and the iron nitrate that the increase to the removal speed of tungsten is not the katalysis that relies on iron nitrate, but rely on the synergy between saltpetre and the iron nitrate.The result of polishing fluid 2,3 shows that the synergy between the multiple oxygenant can significantly improve tungsten and remove speed, and simultaneously, iron nitrate can drop to very low concentration.The result of polishing fluid 4,5 shows that this synergy is not limited to iron, silver ions, and for example also there is synergy in other ions between metal copper ion and the nitrate radical.
Claims (14)
1, a kind of polishing fluid that is used for cmp, contain water, abrasive grains and oxygenant, it is characterized in that, described oxygenant contains nitrate and metal-salt simultaneously, the positively charged ion of nitrate is metal ion or nonmetallic ion, when the positively charged ion of nitrate was metal ion, the positively charged ion of described metal-salt was different from the positively charged ion of described nitrate.
2, polishing fluid according to claim 1 is characterized in that, described nitrate is to be selected from the nitrate of solubility of main group and subgroup element one or more.
3, polishing fluid according to claim 2 is characterized in that, described nitrate is to be selected from ammonium nitrate, saltpetre and the quaternary ammonium nitrate one or more.
4, polishing fluid according to claim 1 is characterized in that, the content of described nitrate is weight percentage 0.02%～10%.
5, polishing fluid according to claim 1, it is characterized in that described metal-salt is one or more in nitrate, phosphoric acid salt, hydrochloride, carbonate, vitriol, sulfonate, oxymuriate, perchlorate, iodate, periodate, bromate, chromic salt, dichromate, manganate and the permanganate that is selected from metal.
6, polishing fluid according to claim 1 is characterized in that, described metal-salt is for being selected from Ag, Co, Cr, Cu, Fe, Mo, Mn, Nb, Ni, Os, Pd, Ru, Sn, Ti, K, one or more in the salt of Na and V.
7, polishing fluid according to claim 1 is characterized in that, the content of described metal-salt is weight percentage 0.02%～2%.
8, polishing fluid according to claim 1 is characterized in that, the content of described nitrate is 0.02～10%, and the content of metal-salt is 0.02～2% simultaneously, and described per-cent is weight percentage.
9, polishing fluid according to claim 1 is characterized in that, described abrasive grains is for being selected from SiO
2, Al
2O
3, ZrO
2, CeO
2, SiC, Fe
2O
3, TiO
2And Si
3N
4In one or more.
10, polishing fluid according to claim 1 is characterized in that, the particle diameter of described abrasive grains is 30～200nm.
11, polishing fluid according to claim 1 is characterized in that, the content of described abrasive grains is weight percentage 0.1%～10%.
12, polishing fluid according to claim 1 is characterized in that, described polishing fluid also contains one or more in sterilant and the tensio-active agent.
13, polishing fluid according to claim 1 is characterized in that, the pH value of described polishing fluid is 1～7.
14, polishing fluid according to claim 13 is characterized in that, the pH value of described polishing fluid is 2～5.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810041771A CN101649162A (en) | 2008-08-15 | 2008-08-15 | Polishing solution used for chemical mechanical grounding |
| CN2009801311128A CN102112567A (en) | 2008-08-15 | 2009-08-13 | Polishing liquid for chemical-mechanical abrading |
| PCT/CN2009/000930 WO2010017693A1 (en) | 2008-08-15 | 2009-08-13 | A polishing liquid for chemical-mechanical abrading |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810041771A CN101649162A (en) | 2008-08-15 | 2008-08-15 | Polishing solution used for chemical mechanical grounding |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101649162A true CN101649162A (en) | 2010-02-17 |
Family
ID=41668654
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810041771A Pending CN101649162A (en) | 2008-08-15 | 2008-08-15 | Polishing solution used for chemical mechanical grounding |
| CN2009801311128A Pending CN102112567A (en) | 2008-08-15 | 2009-08-13 | Polishing liquid for chemical-mechanical abrading |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009801311128A Pending CN102112567A (en) | 2008-08-15 | 2009-08-13 | Polishing liquid for chemical-mechanical abrading |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN101649162A (en) |
| WO (1) | WO2010017693A1 (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012016424A1 (en) * | 2010-08-06 | 2012-02-09 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| WO2012019425A1 (en) * | 2010-08-11 | 2012-02-16 | 安集微电子（上海）有限公司 | Chemo-mechanical polishing liquid |
| CN102452036A (en) * | 2010-10-29 | 2012-05-16 | 安集微电子（上海）有限公司 | Tungsten chemical mechanical polishing method |
| WO2012068775A1 (en) * | 2010-11-26 | 2012-05-31 | 安集微电子（上海）有限公司 | Chemical mechanical polishing slurry |
| CN102533121A (en) * | 2010-12-27 | 2012-07-04 | 安集微电子（上海）有限公司 | Chemically mechanical polishing solution for polishing tungsten |
| CN103897602A (en) * | 2012-12-24 | 2014-07-02 | 安集微电子（上海）有限公司 | Chemical mechanical polishing liquid and polishing method |
| CN104650739A (en) * | 2013-11-22 | 2015-05-27 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing solution for polishing silica substrates |
| CN104745084A (en) * | 2013-12-25 | 2015-07-01 | 安集微电子（上海）有限公司 | Chemical mechanical solution for aluminum, and use method thereof |
| CN105108617A (en) * | 2015-08-20 | 2015-12-02 | 宏旺投资集团有限公司 | Mirror processing method for stainless steel plate and polishing machine adopted in the same |
| CN105583696A (en) * | 2014-11-06 | 2016-05-18 | 株式会社迪思科 | Polishing liquid and method of polishing SiC substrate |
| CN107002280A (en) * | 2014-11-27 | 2017-08-01 | 住友电气工业株式会社 | Silicon carbide substrate, its manufacture method and the method for manufacturing manufacturing silicon carbide semiconductor device |
| CN109415598A (en) * | 2016-06-27 | 2019-03-01 | 三星Sdi株式会社 | Slurry composition for CMP and polishing method for metal film |
| CN111826089A (en) * | 2020-07-28 | 2020-10-27 | 河北工业大学 | Application of GLSI Multilayer Wiring High Valuable Metals in CMP |
| TWI754376B (en) * | 2019-09-11 | 2022-02-01 | 美商羅門哈斯電子材料Ｃｍｐ控股公司 | Method of selective chemical mechanical polishing cobalt, zirconium oxide, poly-silicon and silicon dioxide films |
| CN115975511A (en) * | 2023-02-02 | 2023-04-18 | 张家港安储科技有限公司 | Polishing solution for grinding silicon carbide substrate, polishing solution kit and grinding method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR102716012B1 (en) | 2018-01-11 | 2024-10-14 | 가부시키가이샤 후지미인코퍼레이티드 | Polishing composition |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG90227A1 (en) * | 2000-01-18 | 2002-07-23 | Praxair Technology Inc | Polishing slurry |
| US6261476B1 (en) * | 2000-03-21 | 2001-07-17 | Praxair S. T. Technology, Inc. | Hybrid polishing slurry |
| KR20020083264A (en) * | 2001-04-26 | 2002-11-02 | 삼성전자 주식회사 | Slurry for Chemical Mechanical Polishing and Method for Manufacturing the Same |
| US20030139047A1 (en) * | 2002-01-24 | 2003-07-24 | Thomas Terence M. | Metal polishing slurry having a static etch inhibitor and method of formulation |
| US7132058B2 (en) * | 2002-01-24 | 2006-11-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Tungsten polishing solution |
| CN100475927C (en) * | 2004-04-09 | 2009-04-08 | 上海月旭半导体科技有限公司 | Chemical mechanical grinder of semiconductor chips and formulation thereof |
-
2008
- 2008-08-15 CN CN200810041771A patent/CN101649162A/en active Pending
-
2009
- 2009-08-13 CN CN2009801311128A patent/CN102112567A/en active Pending
- 2009-08-13 WO PCT/CN2009/000930 patent/WO2010017693A1/en active Application Filing
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|---|---|---|---|---|
| WO2012016424A1 (en) * | 2010-08-06 | 2012-02-09 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| WO2012019425A1 (en) * | 2010-08-11 | 2012-02-16 | 安集微电子（上海）有限公司 | Chemo-mechanical polishing liquid |
| CN102452036A (en) * | 2010-10-29 | 2012-05-16 | 安集微电子（上海）有限公司 | Tungsten chemical mechanical polishing method |
| WO2012068775A1 (en) * | 2010-11-26 | 2012-05-31 | 安集微电子（上海）有限公司 | Chemical mechanical polishing slurry |
| CN102533121A (en) * | 2010-12-27 | 2012-07-04 | 安集微电子（上海）有限公司 | Chemically mechanical polishing solution for polishing tungsten |
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| CN104745084A (en) * | 2013-12-25 | 2015-07-01 | 安集微电子（上海）有限公司 | Chemical mechanical solution for aluminum, and use method thereof |
| WO2015096631A1 (en) * | 2013-12-25 | 2015-07-02 | 安集微电子（上海）有限公司 | Chemical mechanical polishing slurry for aluminum and use thereof |
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| CN105583696A (en) * | 2014-11-06 | 2016-05-18 | 株式会社迪思科 | Polishing liquid and method of polishing SiC substrate |
| CN107002280B (en) * | 2014-11-27 | 2019-06-18 | 住友电气工业株式会社 | Silicon carbide substrate, method of manufacturing same, and method of manufacturing silicon carbide semiconductor device |
| CN107002280A (en) * | 2014-11-27 | 2017-08-01 | 住友电气工业株式会社 | Silicon carbide substrate, its manufacture method and the method for manufacturing manufacturing silicon carbide semiconductor device |
| CN105108617B (en) * | 2015-08-20 | 2017-05-10 | 宏旺投资集团有限公司 | Mirror processing method for stainless steel plate and polishing machine adopted in the same |
| CN105108617A (en) * | 2015-08-20 | 2015-12-02 | 宏旺投资集团有限公司 | Mirror processing method for stainless steel plate and polishing machine adopted in the same |
| CN109415598A (en) * | 2016-06-27 | 2019-03-01 | 三星Sdi株式会社 | Slurry composition for CMP and polishing method for metal film |
| CN109415598B (en) * | 2016-06-27 | 2021-10-22 | 三星Sdi株式会社 | CMP slurry composition and polishing method for metal films |
| TWI754376B (en) * | 2019-09-11 | 2022-02-01 | 美商羅門哈斯電子材料Ｃｍｐ控股公司 | Method of selective chemical mechanical polishing cobalt, zirconium oxide, poly-silicon and silicon dioxide films |
| CN111826089A (en) * | 2020-07-28 | 2020-10-27 | 河北工业大学 | Application of GLSI Multilayer Wiring High Valuable Metals in CMP |
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| CN115975511A (en) * | 2023-02-02 | 2023-04-18 | 张家港安储科技有限公司 | Polishing solution for grinding silicon carbide substrate, polishing solution kit and grinding method |
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| CN102112567A (en) | 2011-06-29 |
| WO2010017693A1 (en) | 2010-02-18 |
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