CN101630668B - Compound semiconductor element, packaging structure of optoelectronic element and manufacturing method of optoelectronic element - Google Patents
Compound semiconductor element, packaging structure of optoelectronic element and manufacturing method of optoelectronic element Download PDFInfo
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- CN101630668B CN101630668B CN200810133910.1A CN200810133910A CN101630668B CN 101630668 B CN101630668 B CN 101630668B CN 200810133910 A CN200810133910 A CN 200810133910A CN 101630668 B CN101630668 B CN 101630668B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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Abstract
本发明公开一种化合物半导体元件及光电元件的封装结构及其制造方法，该封装结构包含具有图案的导电膜层、晶粒、至少一个金属导线或是金属凸块、及透明封胶材料。该晶粒固定于该导电膜层的第一表面上，并通过该金属导线或是金属凸块，与该导电膜层电性连接。该透明封胶材料覆盖于该导电膜层的第一表面及该晶粒上，该导电膜层的第二表面露出于该透明封胶材料，其中该第二表面是相对于该第一表面而言。利用本发明不需要印刷电路板介于晶粒及外部电极间传递电气信号，因此可改善散热不佳的问题。
The invention discloses a packaging structure of a compound semiconductor element and a photoelectric element and a manufacturing method thereof. The packaging structure includes a conductive film layer with a pattern, a crystal grain, at least one metal wire or a metal bump, and a transparent sealing glue material. The crystal grain is fixed on the first surface of the conductive film layer, and is electrically connected with the conductive film layer through the metal wire or the metal bump. The transparent sealing material covers the first surface of the conductive film layer and the crystal grain, and the second surface of the conductive film layer is exposed to the transparent sealing material, wherein the second surface is opposite to the first surface Word. Utilizing the present invention does not require a printed circuit board to transmit electrical signals between crystal grains and external electrodes, so the problem of poor heat dissipation can be improved.
Description
Technical field
The present invention relates to a kind of encapsulating structure and manufacture method thereof of compound semiconductor element, relate in particular to a kind of slim encapsulating structure and manufacture method thereof of optoelectronic semiconductor component
Background technology
Because light-emitting diode (light emitting diode in the photoelectric cell; LED) have that volume is little, luminous efficiency is high and an advantage such as the life-span is long, therefore be considered to the best light source of future date green energy conservation illumination.The fashion trend of the fast-developing and full-color screen of LCD makes white light emitting diode except being applied to purposes such as indicator light and large display screen in addition, also cuts vast consumption electronic products, for example: mobile phone and personal digital assistant (PDA).
Fig. 1 is the generalized section that known surface is installed the light-emitting diode of (SMD) element.LED crystal particle 12 is to be fixed on the surface that insulating barrier 13c goes up N type copper-foil conducting electricity 13b by crystal-bonding adhesive 11, and be electrical connected with P-type conduction Copper Foil 13a and N type copper-foil conducting electricity 13b by plain conductor 15, wherein P-type conduction Copper Foil 13a, N type copper-foil conducting electricity 13b and insulating barrier 13c constitute the substrate 13 with circuit.In addition, transparent adhesive material 14 covers on substrate 13, plain conductor 15 and the crystal grain 12, can protect whole light-emitting diode 10 not to be subjected to environment and damage of external force.
Light-emitting diode 10 uses general printed circuit board (PCB) as substrate 13, thus its integral thickness insulating barrier 13c thickness can't be thinner in the substrate 13 because of being subject to.Yet consumption electronic products trend towards gently, thin, short, little outward appearance, so each element of its inside or external shell all need miniaturization.On the other hand, mostly insulating barrier 13c is that the relatively poor resin material of thermal diffusivity makes, and therefore is unfavorable for the heat radiation approach of high-power light emitting compound semiconductor element as the conduction heat.
In sum, the utmost point needs a kind of slim photoelectricity compound semiconductor element on the market, will be thinner except the thickness of element and can save take up space, and to improve the problem of poor heat radiation, with the more favourable making that is applied to high-power components.
Summary of the invention
The invention provides a kind of encapsulating structure and manufacture method thereof of compound semiconductor element, this semiconductor element directly is exposed to adhesive material with outer electrode or contact, and do not need printed circuit board (PCB) between between crystal grain and outer electrode, to transmit electric signal, therefore can improve the problem of poor heat radiation.
The invention provides a kind of encapsulating structure and manufacture method thereof of ultrathin semiconductor element owing to use slim substrate, the thickness of element can be thinner and can save take up space.
For reaching above-mentioned purpose, the present invention discloses a kind of encapsulating structure of compound semiconductor element, and it comprises conductive film layer, crystal grain and the transparent adhesive material with pattern.This crystal grain is fixed on the first surface of this conductive film layer.This transparent adhesive material covers on this conductive film layer first surface and this crystal grain, and the second surface of this conductive film layer is exposed to this transparent adhesive material, and wherein this second surface is for this first surface.
This crystal grain electrically connects by at least one plain conductor and this conductive film layer, perhaps electrically connects by a plurality of projections and this conductive film layer.
The second surface of this conductive film layer is exposed to this transparent adhesive material, and its material is the alloy of silver, nickel, copper, tin, aluminium or aforementioned metal, or indium tin oxide, indium-zinc oxide, indium gallium oxide or indium tungsten oxide.
This conductive film layer comprises N type electrode and P type electrode.
Go back mixing phosphor in this transparent adhesive material.
This crystal grain engages the first surface that is fixed on this conductive film layer by crystal-bonding adhesive or eutectic.
The present invention also discloses a kind of manufacture method of compound semiconductor element encapsulating structure, comprises the following step: the temporary substrate is provided; Form the conductive film layer of tool pattern at this temporary substrate surface, wherein this conductive film layer comprises first surface and with respect to the second surface of this first surface; Fixedly crystal grain is on the first surface of this conductive film layer; Cover a transparent adhesive material on the first surface and this crystal grain of this conductive film layer; And remove this temporary substrate.
The present invention also comprises the step of utilizing wire soldering technology and by a plurality of plain conductors this crystal grain and this conductive film layer being electrically connected.
Also comprise the step of utilizing flip chip technology (fct) and this crystal grain and this conductive film layer being electrically connected by a plurality of projections.
This conductive film layer is formed at this temporary substrate with printing, wire mark, electroforming, change plating or sputter.
This temporary substrate removes by the mode of bending, separation, etching, laser cutting or grinding.
In the manufacture method of compound semiconductor element encapsulating structure, the second surface of this conductive film layer is exposed to this transparent adhesive material.
In the manufacture method of compound semiconductor element encapsulating structure, the material of this conductive film layer is the alloy of silver, nickel, copper, tin, aluminium or aforementioned metal.
In the manufacture method of compound semiconductor element encapsulating structure, the material of this conductive film layer is indium tin oxide, indium-zinc oxide, indium gallium oxide or indium tungsten oxide.
In the manufacture method of the encapsulating structure of compound optoelectronic element, also be included in transparent adhesive material and coat the reflector outward.
The present invention also discloses a kind of encapsulating structure of compound semiconductor element, and it comprises slim substrate, crystal grain and transparent adhesive material.This slim substrate comprises the upper conductive film layer, has the insulating film layer and the lower conductive film layer of a plurality of openings, and wherein this insulating film layer is folded between this upper conductive film layer and this lower conductive film layer.This crystal grain is fixed in this upper conductive film layer, and this transparent adhesive material is covered in this upper conductive film layer and this crystal grain.
This upper conductive film layer and this lower conductive film layer comprise N type electrode and P type electrode respectively, the N type electrode of the N type electrode of this upper conductive film layer and this lower conductive film layer contacts by these a plurality of openings, and the P type electrode of the P type electrode of this upper conductive film layer and this lower conductive film layer contacts by these a plurality of openings again.
In the encapsulating structure of compound semiconductor element, the thickness of this insulating film layer is 0.01mm～0.1mm.
The thickness of this insulating film layer preferably is 0.01mm～0.1mm, and its material is pi, polyethylene (PV), Merlon (PC), polyvinyl chloride (PVC), polymethyl methacrylate (PMMA), acryl.
In the encapsulating structure of compound semiconductor element, also comprise at least one plain conductor, this plain conductor electrically connects this crystal grain and this upper conductive film layer.
In the encapsulating structure of compound semiconductor element, also comprise a plurality of projections, these a plurality of projections electrically connect this crystal grain and this upper conductive film layer.
In the encapsulating structure of compound semiconductor element, also be included in transparent adhesive material and coat the reflector outward.
The present invention also discloses a kind of manufacture method of compound semiconductor element encapsulating structure, comprises the following step: the insulating film layer with a plurality of openings is provided earlier; Form upper conductive film layer and lower conductive film layer two surface in this insulating film layer respectively, wherein this upper conductive film layer and this lower conductive film layer are in contact with one another by these a plurality of openings; Fixedly crystal grain is in this upper conductive film layer; To cover transparent adhesive material on this upper conductive film layer and this crystal grain.
The present invention also comprises and forms this insulating film layer on the sheet material and two steps that form these a plurality of openings on this insulating film layer.
This insulating film layer is by mode film of moulding on this sheet material of coating, infiltration or collosol and gel.
These a plurality of openings utilize machine drilling, laser drill or electric paste etching to be formed at this insulating film layer.
This upper conductive film layer and this lower conductive film layer are formed at the surface of this insulating film layer by the mode of plating, printing or Copper Foil pressing.
In the manufacture method of compound semiconductor element encapsulating structure, this upper conductive film layer and this lower conductive film layer comprise N type electrode and P type electrode respectively, the N type electrode of the N type electrode of this upper conductive film layer and this lower conductive film layer contacts by these a plurality of openings, and the P type electrode of the P type electrode of this upper conductive film layer and this lower conductive film layer contacts by these a plurality of openings again.
In the manufacture method of compound semiconductor element encapsulating structure, it also comprises the step of utilizing wire soldering technology and by a plurality of plain conductors this crystal grain and this upper conductive film layer being electrically connected.
In the manufacture method of compound semiconductor element encapsulating structure, it also comprises the step of utilizing flip chip technology (fct) and by a plurality of projections this crystal grain and this upper conductive film layer being electrically connected.
In the manufacture method of the encapsulating structure of compound semiconductor element, also be included in transparent adhesive material and coat the reflector outward.
The present invention also discloses a kind of encapsulating structure of compound semiconductor element, and it comprises thin base, has first electrode and second electrode; Compound semiconductor crystal grain is positioned on this thin base; This semiconductor grain is fixed in the method for this thin base; And the transparent adhesive tape material coats this semiconductor grain.
This thin base can be conductive film or the composite base plate with pattern, and this composite base plate comprises first conductive layer with pattern, second conductive layer that has the insulation film of a plurality of open-works and have pattern.
This semiconductor grain can be light-emittingdiode crystal grain, laser diode or light sensing crystal grain.
This method that this semiconductor grain is fixed in this film-type substrate comprises with routing and engages or the flip-chip bond mode is electrically connected to this film-type substrate with this semiconductor grain.This semiconductor grain can be fixed in this film-type substrate with crystal-bonding adhesive or with the eutectic juncture when routing engages.
Also comprise light-converting material and be blended in this transparent adhesive tape material, wherein this light-converting material can be fluorescent material, and this transparent adhesive tape material can be epoxy resin (epoxy) or siloxanes (silicone).
Also be included in transparent adhesive material and coat the reflector outward.
The present invention also discloses kind of the manufacture method of compound semiconductor element encapsulating structure, comprises the following step: the film-type substrate is provided, and it has first electrode and second electrode; Semiconductor grain is fixed on this film-type substrate, make the positive pole of this semiconductor grain be electrically connected to this first electrode, and the negative pole of this semiconductor grain is electrically connected to this second electrode; And the transparent adhesive tape material coated this semiconductor grain.
This conductive film with pattern forms the conductive film with pattern on the temporary substrate, and removes this temporary substrate after this transparent adhesive tape material coats this semiconductor grain.
This conductive film layer is formed at this temporary substrate with printing, wire mark, electroforming, change plating or sputter, and the mode of this temporary substrate by bending, separation, etching, laser cutting or grinding removes.
The insulation film and second that this composite base plate comprises first conductive layer with pattern, have a plurality of open-works has the conductive layer of pattern.
Above-mentioned composite base plate formation method comprises: provide this to have the insulation film of a plurality of open-works; This first conductive layer with pattern and this second conductive layer with pattern are put on the relative two sides of this insulation film with a plurality of open-works, make this have between first conductive layer of pattern and this second conductive layer by should a plurality of open-works electric connections with pattern.
In the manufacture method of compound semiconductor element encapsulating structure, this semiconductor grain can be LED crystal particle, laser diode or light sensing crystal grain.
In the manufacture method of semiconductor component packaging structure, this step that this semiconductor grain is fixed in this film-type substrate comprises with routing and engages or the flip-chip bond mode is electrically connected to this film-type substrate with this semiconductor grain.
In the manufacture method of semiconductor component packaging structure, this semiconductor grain can be fixed in this film-type substrate with crystal-bonding adhesive or with the eutectic juncture when routing engages.
In the manufacture method of semiconductor component packaging structure, also comprise light-converting material and be blended in this transparent adhesive tape material, wherein this light-converting material can be fluorescent material.
In the manufacture method of semiconductor component packaging structure, this transparent adhesive tape material can be epoxy resin or siloxanes.
In the manufacture method of semiconductor component packaging structure, also be included in this transparent adhesive material and coat the reflector outward.
Description of drawings
Fig. 1 is the generalized section that known surface is installed the light-emitting diode of (SMD) type;
Fig. 2 (a)～Fig. 2 (f) is the step of manufacturing schematic diagram of The compounds of this invention semiconductor component packaging structure;
Fig. 3 (a) and Fig. 3 (b) are the present invention's cutaway view and top views of the compound semiconductor element encapsulating structure of two embodiment in addition;
Each layer exploded view of the ultrathin substrate of Fig. 4 the present invention;
The cutaway view of the ultrathin substrate of Fig. 5 the present invention;
Fig. 6 (a)～Fig. 6 (b) is the present invention's cutaway view of the compound semiconductor element encapsulating structure of two embodiment in addition; And
Fig. 7 is the top view of the compound semiconductor element encapsulating structure of another embodiment of the present invention.
Wherein, description of reference numerals is as follows:
10 light-emitting diodes, 11 dielectric materials layers
12 crystal grain, 13 substrates
13aP type copper-foil conducting electricity 13bN type copper-foil conducting electricity
15 plain conductors, 20 compound semiconductor elements
21 substrates, 22 conductive film layers
23 crystal grain, 24 crystal-bonding adhesives
25 plain conductors, 26 transparent adhesive materials
27 fluorophor, 28 reflector layers
30 compound semiconductor elements, 32 conductive film layers
33 crystal grain, 35,75 projections
36 transparent adhesive material 38 reflector layers
40 substrates, 41 upper conductive film layers
42 insulating film layers, 43 lower conductive film layers
20 ', 30 ', 60,60 ', 70 compound semiconductor elements
63,63 ', 73 crystal grain, 64 crystal-bonding adhesives
65,65 ' plain conductor, 66 transparent adhesive materials
67 fluorophor, 211 first surfaces
212 second surface 221N type electrodes
224 second surface 321N type electrodes
324 second surface 411P type electrodes
422 opening 431P type electrodes
432N type electrode
Embodiment
Fig. 2 (a)～2 (e) is the step of manufacturing schematic diagram of The compounds of this invention semiconductor component packaging structure.Shown in Fig. 2 (a), temporary substrate 21 has first surface 211 and second surface 212, and first surface 211 is upper surfaces in the drawings, and second surface 212 is lower surfaces.Temporary substrate 21 can be made by metal material, ceramic material or macromolecular material, and the conductive film layer 22 that forms a tool pattern with printing (printing), wire mark (screening), electroforming (electroform), change plating (electroless plating) or sputter (sputter) is arranged on its first surface 211.Conductive film layer 22 can be the alloy of silver, nickel, copper, tin, aluminium or aforementioned metal material, or indium tin oxide (ITO), indium-zinc oxide (IZO), indium gallium oxide (IGO) and indium tungsten oxide transparent conductive materials such as (IWO), and comprise N type electrode 221 and P type electrode 222, or the contact pattern of more isolated areas.
Shown in Fig. 2 (b)～2 (c), by crystal-bonding adhesive 24 a compound semiconductor crystal grain 23 is fixed on the N type electrode 221, utilizes bonding wire again or be called the electric connection that routing engages (wire-bonding) technology and finishes 222 at crystal grain 23, N type electrode 221 and P type electrode with plain conductor 25.Also can engage (eutectic bonding) by eutectic crystal grain 23 is fixed on the N type electrode 221, thus the use of replacement crystal-bonding adhesive 24.Then cover transparent adhesive material 26 on crystal grain 23, N type electrode 221, P type electrode 222 and plain conductor 25, for example: epoxy resin (epoxy) or silica gel (silicone; Claim siloxanes again), this transparent adhesive material 26 can be sneaked into fluorophor 27, can be excited whereby and produce secondary light ray, and and a light producing of crystal grain 23 mix and form the white light or the electromagnetic radiation of other kinds multi-wavelength.The material of the fluorophor 27 of sneaking into can be yttrium-aluminium-garnet (YAG), and terbium aluminium garnet (TAG), silicate family (silicate), nitride are main different fluorophor such as (nitride-based).Transparent adhesive material 26 can cover on the crystal grain 23 by transfer formation (transfer-molding) or injection moulding modes such as (inject-molding).
After these transparent adhesive material 26 sclerosis, can or grind by bending, separation, etching, laser cutting substrate 21 is removed, so that the second surface 224 of conductive film layer 22 exposes at transparent adhesive material 26, so far the encapsulating structure of compound semiconductor element 20 is just finished, shown in Fig. 2 (e).And the second surface 224 of conductive film layer 22 is with respect to first surface 223, and this first surface 223 is still covered by transparent adhesive material 26.
Penetrate for semiconductor grain 23 can be concentrated from the upper surface of transparent adhesive material 26, can be around transparent adhesive material 26 coating reflector layer 28, shown in Fig. 2 (f).The light that compound semiconductor element 20 ' middle crystal grain 23 sends can be reflected and the top of these crystal grain 23 circuit surfaces that lead by reflector layer 28, penetrates out transparent adhesive material 26 then and injects to the outside.The material of reflector layer 28 can be the material that opaque glue material comprises high reflectance, for example titanium dioxide.
Second surface 224 by N type electrode 221 and P type electrode 222 exposes outside the transparent adhesive material 26, therefore can be used as the external connector of mounted on surface.On the other hand, therefore the heat that crystal grain 23 produces can increase the radiating efficiency of encapsulating structure directly by conductive film layer 22 very thin and that heat conduction is good.Be compared to known technology, The compounds of this invention semiconductor element 20 does not need the some of whole printed circuit board (PCB) as encapsulating structure, so thickness can drop to 0.2mm～0.15mm.In the present embodiment, crystal grain 23 can be light-emitting diode, laser diode, or photocell (photocell).
Fig. 3 (a) is the cutaway view of the compound semiconductor element encapsulating structure of another embodiment of the present invention.Compound semiconductor element 30 comprises conductive film layer 32, crystal grain 33 and the transparent adhesive material 36 with pattern.These crystal grain 33 flip-chips are fixed on the first surface 323 of conductive film layer 32, and are electrical connected with N type electrode 321 and P type electrode 322 respectively by a plurality of projections 35.Transparent adhesive material 36 covers on the first surface 323 and crystal grain 33 of conductive film layer 32, and the second surface 324 of conductive film layer 32 is exposed to transparent adhesive material 36.
For making crystal grain 33 can concentrate the upper surface of self-induced transparency adhesive material 36 to penetrate, can be at the coating reflector layer 38 all around of transparent adhesive material 36, shown in Fig. 3 (b).The light that compound semiconductor element 30 ' middle crystal grain 33 sends can be reflected and the top of these crystal grain 33 circuit surfaces that lead by reflector layer 38, penetrates out transparent adhesive material 36 then and injects to the outside.In the present embodiment, crystal grain 33 can be light-emitting diode, laser diode, or photocell (photocell).
Fig. 4 is each layer exploded view of the ultrathin substrate of the present invention, and Fig. 5 is the cutaway view of the ultrathin substrate of the present invention.Ultrathin substrate 40 comprises upper conductive film layer 41, insulating film layer 42 and lower conductive film layer 43, and the N type electrode 412 of upper conductive film layer 41 can contact by the N type electrode 432 of a plurality of openings 422 on the insulating film layer 42 and lower conductive film layer 43, as shown in Figure 5.In the same manner, the P type electrode 411 of upper conductive film layer 41 also can contact by the P type electrode 431 of a plurality of openings 422 on the insulating film layer 42 and lower conductive film layer 43.Because the about 0.01～0.1mm of thickness of insulating film layer 42, so upper conductive film layer 41 and lower conductive film layer 43 are easy to be in contact with one another by opening 422.Insulating film layer 42 can be the film 421 that a pi, polyethylene (PV), Merlon (PC), polyvinyl chloride (PVC), polymethyl methacrylate (PMMA), acryl are made, this pi material is shaped to film 421 by the mode of coating, infiltration (dipping) or collosol and gel earlier on sheet material, utilize machine drilling, laser drill or electric paste etching that the opening 42 of the about 0.1mm of diameter is formed on the film 421 again.Upper conductive film layer 41 and lower conductive film layer 43 form by plating, printing or Copper Foil pressing.In addition, upper conductive film layer 41 and lower conductive film layer 43 can be easy to heat is transmitted mutually by a plurality of openings 422.
Fig. 6 (a)～6 (b) is the present invention's cutaway view of the compound semiconductor element encapsulating structure of two embodiment in addition.Compound semiconductor element 60 comprises substrate 40, crystal grain 63, plain conductor 65 and transparent adhesive material 66.This crystal grain 63 is by the good crystal-bonding adhesive 64 of conductivity or utilize the eutectic processing procedure to be fixed on substrate 40 surfaces, and its back side is exactly N type base material and being electrical connected via crystal-bonding adhesive 64 and N type electrode 412.In addition, shown in Fig. 6 (b), compound semiconductor element 60 ' middle crystal grain 63 ' base material be idioelectric material, therefore for example: sapphire substrate needs two plain conductors 65 ' connect respectively crystal grain 63 ' and N type electrode 412 and P type electrode 411.This transparent adhesive material 66 can be sneaked into fluorophor 67, can be excited by this and produce secondary light ray, and and a light of crystal grain 63 ' generations mix and the formation white light or the electromagnetic radiation of other kinds multi-wavelength.The material of the fluorophor 67 of sneaking into can be yttrium-aluminium-garnet (YAG), and terbium aluminium garnet (TAG), silicate family (silicate), nitride are main different fluorophor such as (nitride-based).In the present embodiment, crystal grain 63 can be light-emitting diode, laser diode, or photocell (photocell).Transparent adhesive material 66 can cover on the crystal grain 63 by transfer formation (transfer-molding) or injection moulding modes such as (inject-molding).
Fig. 7 is the cutaway view of the compound semiconductor element encapsulating structure of another embodiment of the present invention.Compound semiconductor element 70 comprises substrate 40, crystal grain 73 and transparent adhesive material 66.This crystal grain 33 is that flip-chip is fixed on the substrate 40, and is electrical connected with N type electrode 412 and P type electrode 411 respectively by a plurality of projections 75.In the present embodiment, crystal grain 73 can be light-emitting diode, laser diode, or photocell (photocell).In two embodiment of Fig. 6 and Fig. 7, can use the reflector to increase the brightness of bright dipping.
Technology contents of the present invention and technical characterstic are open as above, yet persons skilled in the art still may reach openly and do all replacement and modifications that does not deviate from spirit of the present invention based on prompting of the present invention.Therefore, protection scope of the present invention should be not limited to the disclosed scope of embodiment, and should comprise various do not deviate from replacement of the present invention and modifications, and is contained by described claim.
Claims (9)
1. the encapsulating structure of a compound semiconductor element comprises:
Slim substrate, comprise first conductive layer with pattern, second conductive layer that has the insulation film of a plurality of open-works and have pattern, described first conductive layer has first electrode and second electrode, described first conductive layer and second conductive layer put on the relative two sides of insulation film, by pressing first conductive layer and second conductive layer are electrically connected by a plurality of open-works of described insulation film;
Compound semiconductor crystal grain is positioned on this slim substrate;
This semiconductor grain is fixed in this slim substrate; And
The transparent adhesive tape material coats this semiconductor grain.
2. the encapsulating structure of compound semiconductor element according to claim 1, wherein this semiconductor grain is LED crystal particle, laser diode or light sensing crystal grain.
3. the encapsulating structure of compound semiconductor element according to claim 1 also comprises light-converting material and is blended in this transparent adhesive tape material, and wherein this light-converting material is a fluorescent material, and wherein this transparent adhesive tape material is epoxy resin or siloxanes.
4. the encapsulating structure of compound semiconductor element according to claim 1 also is included in transparent adhesive material and coats the reflector outward.
5. the manufacture method of a compound optoelectronic component packaging structure, its step comprises:
Slim substrate is provided, it comprises first conductive layer with pattern, second conductive layer that has the insulation film of a plurality of open-works and have pattern, described first conductive layer has first electrode and second electrode, described first conductive layer and second conductive layer put on the relative two sides of insulation film, by pressing first conductive layer and second conductive layer are electrically connected by a plurality of open-works of described insulation film;
Semiconductor grain is fixed on this slim substrate, make the positive pole of this semiconductor grain be electrically connected to this first electrode, and the negative pole of this semiconductor grain is electrically connected to this second electrode; And
The transparent adhesive tape material is coated this semiconductor grain.
6. the manufacture method of compound optoelectronic component packaging structure according to claim 5, wherein this semiconductor grain is LED crystal particle, laser diode or light sensing crystal grain.
7. the manufacture method of compound optoelectronic component packaging structure according to claim 5, wherein this step that this semiconductor grain is fixed in this slim substrate comprises with routing and engages or the flip-chip bond mode is electrically connected to this slim substrate with this semiconductor grain, and wherein this semiconductor grain is fixed in this slim substrate with crystal-bonding adhesive or eutectic juncture when routing engages.
8. according to the manufacture method of claim 5 or 7 described compound optoelectronic component packaging structures, also comprise light-converting material and be blended in this transparent adhesive tape material, wherein this light-converting material can be fluorescent material, and wherein this transparent adhesive tape material is epoxy resin or siloxanes.
9. according to the manufacture method of claim 5 or 7 described compound optoelectronic component packaging structures, also be included in this transparent adhesive material and coat the reflector outward.
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| CN103824929A (en) * | 2014-03-24 | 2014-05-28 | 武汉和光照明科技有限公司 | Formula for fabricating transparent substrate, transparent substrate and light-emitting diode (LED) light-emitting module and lamp |
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| JP2008147512A (en) * | 2006-12-12 | 2008-06-26 | Sanyo Electric Co Ltd | Light-emitting device and manufacturing method thereof |
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| JP2008147512A (en) * | 2006-12-12 | 2008-06-26 | Sanyo Electric Co Ltd | Light-emitting device and manufacturing method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103824929A (en) * | 2014-03-24 | 2014-05-28 | 武汉和光照明科技有限公司 | Formula for fabricating transparent substrate, transparent substrate and light-emitting diode (LED) light-emitting module and lamp |
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| CN101630668A (en) | 2010-01-20 |
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