CN101629679A - Light emitting diode and light emitting diode efficiency control method - Google Patents
Light emitting diode and light emitting diode efficiency control method Download PDFInfo
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Abstract
Description
技术领域 technical field
本发明涉及一种发光二极管技术,尤其涉及一种可在制造过程中控制发光亮度的发光二极管及发光二极管亮度控制方法。The invention relates to a light-emitting diode technology, in particular to a light-emitting diode capable of controlling light-emitting brightness in a manufacturing process and a method for controlling the brightness of the light-emitting diode.
背景技术 Background technique
随着电子技术的日新月异,显示装置已成为日常生活及工作环境中不可缺少的产品,随着显示装置朝向薄型化与环保化的趋势发展,发光二极管渐渐取代冷阴极管成为显示装置内部的发光源。With the rapid development of electronic technology, display devices have become an indispensable product in daily life and working environment. With the development of display devices towards thinner and more environmentally friendly, light-emitting diodes gradually replace cold cathode tubes as the light source inside the display device .
当显示装置因亮度或显示范围需求必须使用多个发光二极管作为光源时,通常需要多个发光二极管发光强度相同,显示装置的亮度与显示范围能符合所需的发光强度分布。例如,现有的大中型电视均具有对于发光强度的需求,所以必须应用多个发光二极管分别照射各个区域,并搭配适合的导光板与扩散片,以产生足够亮度与均匀度的发光源。When a display device must use multiple light emitting diodes as light sources due to brightness or display range requirements, it is usually required that the multiple light emitting diodes have the same luminous intensity, so that the brightness and display range of the display device can meet the required luminous intensity distribution. For example, existing large and medium-sized TVs all have requirements for luminous intensity, so multiple light-emitting diodes must be used to illuminate each area separately, and a suitable light guide plate and diffuser must be used to produce a light source with sufficient brightness and uniformity.
但是,每个发光二极管之间的发光强度差异会造成各个照明区域间有显著的亮度差异。为了改善这个问题,当前显示装置厂商以分类的方式取得相近发光强度的发光二极管,作为大中型电视的发光源。但是在同一工序出产的晶片上的发光二极管仍存在发光效率的差异,当其应用于平均发光亮度较严格的显示装置时,发光二极管的生产质量难以满足要求,同时,分类作业会提高生产的成本与备料的困难度。However, the difference in luminous intensity between each LED can cause significant brightness differences between the various illuminated areas. In order to improve this problem, current display device manufacturers obtain light-emitting diodes with similar luminous intensity in a classified manner as light sources for large and medium-sized TVs. However, there are still differences in luminous efficiency between LEDs produced in the same process. When they are applied to display devices with stricter average luminous brightness, the production quality of LEDs cannot meet the requirements. At the same time, sorting operations will increase production costs. Difficulty with material preparation.
发明内容 Contents of the invention
本发明的目的之一在于提供一种可控制发光亮度的发光二极管,可使每个发光二极管具有一致的发光效能。One of the objectives of the present invention is to provide a light-emitting diode with controllable luminance, so that each light-emitting diode can have consistent luminous efficacy.
为实现上述目的,本发明所提供一种发光二极管,包括基板、第一金属接脚、第二金属接脚、发光芯片以及导线,第一金属接脚与第二金属接脚分别设置于基板上,发光芯片设置于第一金属接脚上,发光芯片一侧形成一第出光面,导线连接发光芯片与第二金属接脚,发光芯片可发出光束,光束由第一出光面射出并形成发光路径,发光路径中的至少一元件上形成有破坏性结构。In order to achieve the above object, the present invention provides a light emitting diode, including a substrate, a first metal pin, a second metal pin, a light-emitting chip and a wire, the first metal pin and the second metal pin are respectively arranged on the substrate , the light-emitting chip is arranged on the first metal pin, one side of the light-emitting chip forms a first light-emitting surface, the wire connects the light-emitting chip and the second metal pin, the light-emitting chip can emit light beams, and the light beams are emitted from the first light-emitting surface to form a light-emitting path , a destructive structure is formed on at least one element in the light-emitting path.
本发明的另一目的在于提供一种如上述发光二极管的亮度控制方法。Another object of the present invention is to provide a method for controlling the brightness of the above-mentioned LED.
为实现上述目的,本发明所提供的发光二极管的亮度控制方法包括以下步骤:In order to achieve the above object, the method for controlling the brightness of light-emitting diodes provided by the present invention includes the following steps:
步骤一:设定发光二极管的发光效能预设标准值;Step 1: Setting the preset standard value of the luminous efficacy of the LED;
步骤二:测量并记录待测发光二极管的发光效能;Step 2: measure and record the luminous efficiency of the light-emitting diode to be tested;
步骤三:计算待测发光二极管的发光效能与预设标准值的差异值;以及Step 3: Calculate the difference between the luminous efficacy of the LED to be tested and the preset standard value; and
步骤四:于发光二极管发光路径中的至少一元件上形成破坏性结构,破坏性结构的范围与差异值成正比。Step 4: forming a destructive structure on at least one element in the light-emitting path of the LED, and the range of the destructive structure is proportional to the difference value.
本发明的发光二极管利用破坏性结构改变发光路径中的元件的光学特性,使其发光效率下降、不发光或降低其光穿透率,进一步降低单一发光二极管的发光效能,因此,可使每个发光二极管具有一致的发光效能。The light-emitting diode of the present invention uses a destructive structure to change the optical characteristics of the elements in the light-emitting path, so that its luminous efficiency decreases, it does not emit light, or its light transmittance is reduced, and the luminous efficiency of a single light-emitting diode is further reduced. Therefore, each light-emitting diode can be made Light emitting diodes have consistent luminous efficacy.
附图说明 Description of drawings
在说明书附图中:In the accompanying drawings of the manual:
图1为本发明发光二极管第一实施例的结构剖视图;Fig. 1 is a structural cross-sectional view of a first embodiment of a light-emitting diode of the present invention;
图2为本发明发光二极管第二实施例的结构剖视图;2 is a structural sectional view of a second embodiment of a light emitting diode of the present invention;
图3为本发明发光二极管效能控制方法的步骤流程图;3 is a flow chart of the steps of the method for controlling the performance of light-emitting diodes of the present invention;
图4为本发明发光二极管效能控制方法利用电磁波光束改变发光二极管发光路径中特定区域的光学特性的步骤流程图;Fig. 4 is a flow chart of the steps of changing the optical characteristics of a specific area in the light-emitting path of the light-emitting diode by using electromagnetic wave beams in the light-emitting diode efficiency control method of the present invention;
图5为本发明发光二极管效能控制方法利用喷砂改变发光二极管发光路径中特定区域的光学特性的步骤流程图;Fig. 5 is a flow chart of the steps of changing the optical characteristics of a specific area in the light-emitting path of the light-emitting diode by sandblasting in the light-emitting diode efficiency control method of the present invention;
图6为本发明发光二极管第三实施例的结构剖视图;6 is a structural sectional view of a third embodiment of a light emitting diode of the present invention;
图7为本发明发光二极管第四实施例的结构剖视图;Fig. 7 is a structural sectional view of a fourth embodiment of a light emitting diode of the present invention;
图8为本发明发光二极管第五实施例的结构剖视图;Fig. 8 is a structural sectional view of a fifth embodiment of a light emitting diode of the present invention;
图9为本发明发光二极管第六实施例的结构剖视图。FIG. 9 is a cross-sectional view of the structure of the sixth embodiment of the light emitting diode of the present invention.
并且,上述附图中的附图标记说明如下:And, the reference numerals in the above-mentioned accompanying drawings are explained as follows:
100发光二极管100 LEDs
1 基板1 Substrate
2 第一金属接脚2 first metal pin
3 第二金属接脚3 second metal pin
4 发光芯片4 Light-emitting chips
5 导线5 wires
6 反射壁6 reflective wall
7 第一出光面7 The first light emitting surface
8 第一碳化结构8 The first carbonization structure
9 封装部9 Packaging Department
10 第二出光面10 Second light emitting surface
11 第二碳化结构11 Second carbonization structure
12 荧光微颗粒12 fluorescent microparticles
13 第一凹陷结构13 The first concave structure
14 第二凹陷结构14 Second concave structure
15 透明玻璃15 transparent glass
16 光反射元件16 light reflective element
具体实施方式 Detailed ways
以下参照实施例并配合附图详细说明本发明的技术内容、构造特征、所实现目的及效果。The technical content, structural features, achieved goals and effects of the present invention will be described in detail below with reference to the embodiments and accompanying drawings.
参照图1,本发明第一实施例中,发光二极管100设有基板1,基板1上设有第一金属接脚2、第二金属接脚3、发光芯片4、导线5与反射壁6。第一金属接脚2及第二金属接脚3设置在基板1的两侧,且从基板1的顶面延伸至底面处。反射壁6从基板1顶面的相对两侧向上延伸而成,发光芯片4与导线5分别设置于基板1与反射壁6所形成的空间内,且发光芯片4设置于第一金属接脚2上,导线5连接发光芯片4与第二金属接脚3,发光芯片4一侧形成第一出光面7,本实施例中于第一出光面7上形成破坏性结构,该破坏性结构为一第一碳化结构8。发光二极管100工作时,第一金属接脚2与第二金属接脚3分别导入正负电压后,可激发发光芯片4发出光束,光束并于发光芯片4外部形成发光路径(图中箭头所示)。Referring to FIG. 1 , in the first embodiment of the present invention, a light-
参照图2,本发明第二实施例发光二极管100发光路径中设有封装部9,封装部9填充于基板1与反射壁6所形成的空间内,并包覆发光芯片4与导线5形成第二出光面10,第二出光面10上形成破坏性结构,本实施例中破坏性结构为一第二碳化结构11,封装部9中可掺杂分布有荧光微颗粒12或为完全透明。Referring to FIG. 2 , an
使用完全透明的封装部9时,发光芯片4的激发光穿透封装部9的第二出光面10后发出,使用含荧光微颗粒12的封装部9时,选择发光芯片4射出光束的发光频谱与荧光微颗粒12的吸收与发光频谱后,可使其相互作用并产生所需发光频谱的出射光。When using a completely
参照图3,本发明发光二极管效能控制方法包括以下步骤:Referring to Fig. 3, the method for controlling the efficiency of light-emitting diodes of the present invention includes the following steps:
步骤1:测量并记录发光二极管100的发光效能;Step 1: measure and record the luminous efficiency of the
步骤2:计算并判断发光二极管100的发光效能是否介于预设容许值范围内,若发光二极管100的发光效能介于预设容许值范围内,执行步骤3,若发光二极管100的发光效能低于预设容许值,执行步骤4,若发光二极管100的发光效能高于预设容许值范围,执行步骤5;Step 2: Calculate and judge whether the luminous efficacy of the
步骤3:发光二极管100的发光效能符合需求,不必进行调整并可直接使用;Step 3: The luminous efficacy of the
步骤4:发光二极管100的发光效能不符合需求,不能进行调整且不可使用;Step 4: The luminous efficacy of the
步骤5:改变发光二极管100发光路径中的光学元件的光学特性,以降低发光二极管100的发光效能,使发光二极管100的发光效能介于预设容许值范围内。Step 5: Change the optical characteristics of the optical elements in the light-emitting path of the
参照图4,改变发光路径中光学元件的光学特性可包含下列步骤:Referring to FIG. 4, changing the optical characteristics of the optical elements in the light path may include the following steps:
步骤6:计算发光二极管100的发光效能与预设标准值的差异值;以及Step 6: Calculate the difference between the luminous efficacy of the
步骤7:利用电磁波光束控制系统于发光路径中的光学元件上形成微聚焦点,并于微聚焦点处发射瞬间集中能量的电磁波光束以产生碳化结构8、11,进一步改变光学元件上微聚焦点处的光学特性。Step 7: Use the electromagnetic wave beam control system to form a micro-focus point on the optical element in the light-emitting path, and emit an electromagnetic wave beam with instantaneous concentrated energy at the micro-focus point to produce
在具体实施时,可预先设定发光二极管100发光效能的预设标准值为每瓦100流明,而容许值范围为标准值的正负百分之一,即每瓦99流明至每瓦101流明,当发光二极管100发光效能超过每瓦101流明时,可使用电磁波光束控制系统,如红外线激光控制系统,于发光路径中光学元件上产生微聚焦点,例如,在发光芯片4的第一出光面7或是封装部9的第二出光面10利用红外线激光控制系统产生微聚焦点。In actual implementation, the preset standard value of the luminous efficacy of the
之后,以瞬间集中能量的红外线激光照射于发光芯片4的第一出光面7或是封装部9的第二出光面10的微聚焦点上,使其产生第一碳化结构8或第二碳化结构11,例如,碳化第一出光面7或是第二出光面10的微聚焦点,使其变成暗色,以改变微聚焦点处的光学特性。若封装部9掺杂分布有荧光微颗粒12时,可控制微聚焦点对准荧光微颗粒12,再以瞬间集中能量的外线激光照射并破坏荧光微颗粒12使其不发光。After that, irradiate the first light-emitting
当发光二极管100发光效能与预设标准值之间的差异值较大时,可设定较多微聚焦点,使发光芯片4的第一出光面7或是封装材料9的第二出光面10形成较多的第一碳化结构8与第二碳化结构11,当发光二极管100发光效能与预设标准值之间的差异值较小时,可设定较少微聚焦点,使发光芯片4的第一出光面7或是封装材料9的第二出光面10形成较少的第一碳化结构8与第二碳化结构11。When the difference between the luminous efficacy of the light-emitting
或者,当发光二极管100发光效能与预设标准值之间的差异值较大时,可设定红外线激光照设于微聚焦点的时间较长,使发光芯片4第一出光面7的第一碳化结构8或是封装材料9第二出光面10上的第二碳化结构11的范围较大,当发光二极管100发光效能与预设标准值之间的差异值较小时,可设定红外线激光照设于微聚焦点的时间较短,使发光芯片4第一出光面7上的第一碳化结构8或是封装材料9第二出光面10上的第二碳化结构11的范围较小。Alternatively, when the difference between the luminous efficacy of the light-emitting
因此,发光芯片4第一出光面7上的第一碳化结构8或是封装材料9第二出光面10上的第二碳化结构11的碳化区域或碳化程度可依照发光二极管100的发光效能做调整。具有较高发光效能的发光二极管100可增加或扩大其发光路径中光学元件的碳化结构8、11,而具有较低发光效能但仍高于预设容许值的发光二极管100可降低其发光路径中光学元件的碳化结构8、11,发光效能介于预设容许值范围内的发光二极管100则不进行处理。Therefore, the carbonized area or carbonization degree of the first
经由碳化结构8、11可改变发光二极管100发光路径中的光学元件的光学特性,如光穿透率,使微聚焦点处发光效率下降、不发光或降低其光穿透率,以降低单一发光二极管100的发光效能,从而可使每个发光二极管100具有一致的发光效能。The optical characteristics of the optical elements in the light-emitting path of the light-emitting
另外,在真正实施时,可先剔除发光效能低于预设容许值的发光二极管100,之后,再对其他发光效能介于预设容许值范围及超过预设容许值范围的发光二极管100执行测量及处理等步骤。In addition, during actual implementation, the light-emitting
参照图5,在本发明另一实施例中,改变发光路径中光学元件的光学特性可包含下列步骤:Referring to FIG. 5, in another embodiment of the present invention, changing the optical characteristics of the optical elements in the light-emitting path may include the following steps:
步骤6’:计算发光二极管100的发光效能与预设标准值的差异值;及Step 6': Calculate the difference between the luminous efficacy of the
步骤7’:使用微颗粒冲击发光路径中光学元件,使其结构产生不规则凹陷,以改变发光元件的光学特性。Step 7': Use micro-particles to impact the optical element in the light-emitting path, causing irregular depressions in its structure, so as to change the optical characteristics of the light-emitting element.
在真正实施时,可预先设定发光二极管100发光效能的预设标准值为每瓦100流明,而容许值范围为标准值的正负百分之一,即每瓦99流明至每瓦101流明,当发光二极管100发光效能超过每瓦101流明时,可使用微控制喷出量的喷嘴对发光二极管100发光路径中的光学元件进行一次性冲击。In actual implementation, the preset standard value of the luminous efficacy of the
参照图6,本发明第三实施例中,于发光芯片4的第一出光面7进行喷砂冲击,使其产生破坏性结构,在本实施例中,破坏性结构为一第一凹陷结构13。参照图7,本发明第四实施例中,于封装材料9的第二出光面10进行喷砂冲击,使其产生破坏性结构,在本实施例中,破坏性结构为一第二凹陷结构14。当发光二极管100发光效能与预设标准值之间的差异值较大时,可增加喷砂量,当差异值较小时,可降低喷砂量。Referring to FIG. 6 , in the third embodiment of the present invention, sandblasting is performed on the first light-emitting
另外,可使用可微控制喷出时间的喷嘴对发光二极管100的第一出光面7或是封装材料9的第二出光面10进行连续冲击,当发光二极管100的发光效能与预设容许值之间的差异值较大时,喷砂时间较长,相反地,当差异值较小时,喷砂时间较短。In addition, the nozzle that can micro-control the ejection time can be used to continuously impact the first light-emitting
因此,发光二极管100中发光芯片4第一出光面7上的第一凹陷结构13与封装材料9第二出光面10上的第二凹陷结构14的范围可依照发光二极管100的发光效能做调整。具有较高发光效能的发光二极管100可扩大第一凹陷结构13与第二凹陷结构14的范围,而具有较低发光效能但仍高于预设容许值的发光二极管100可缩减第一凹陷结构13与第二凹陷结构14的范围,发光效能介于预设容许值范围内的发光二极管100则不进行处理。Therefore, the ranges of the first recessed
因此,使发光二极管100发光路径中光学元件的结构变化呈不规则形凹陷,使通过此区域的光线发生部分散射现象,相对减少通过光线能量,以降低单一发光二极管100的发光效能,使每个发光二极管100具有一致的发光效能。Therefore, the structure of the optical elements in the light-emitting path of the light-emitting
另外,可使用化学材料侵蚀破坏发光二极管100中发光芯片4的第一出光面7或是封装材料9的第二出光面10,以降低单一发光二极管100的发光效能,使每个发光二极管100具有一致的发光效能。In addition, chemical materials can be used to corrode and destroy the first light-emitting
参照图8,本发明第五实施例中,发光二极管100发光路径中的光学元件还包括一可透光元件,可透光元件可由玻璃材料、塑料材料或是玻璃与塑料的组合形成。本实施例中,可透光元件为透明玻璃15,透明玻璃15设置于封装部9的第二出光表面10上并与封装部9相互分离。在真正实施时,透明玻璃15也可连接于封装部9上。于透明玻璃15上形成破坏性结构的碳化结构8、11或凹陷结构13、14,以改变透明玻璃15的光学特性,降低发光二极管100的发光效能,使发光二极管100的发光效能介于预设容许值范围内。Referring to FIG. 8 , in the fifth embodiment of the present invention, the optical element in the light-emitting path of the
在实施时,可预先准备多个由上述方法做成且具有不同光学特性的透明玻璃15,在测量并计算发光二极管100的发光效能与预设标准值的差异值后,可根据此差异值搭配使用具有相对应光学特性的透明玻璃15,以降低发光二极管100的发光效能,使发光二极管100的发光效能介于预设容许值范围内。During implementation, a plurality of
参照图9,本发明第六实施例中,发光二极管100发光路径中的光学元件还包括光反射元件16,光反射元件16倾斜设置于第二出光面10上并与第二出光面10相互分离。在实施时,可通过调整光反射元件16的倾斜角度去控制发光二极管100射出光元发光路径。Referring to FIG. 9 , in the sixth embodiment of the present invention, the optical elements in the light-emitting path of the light-emitting
于光反射元件16对应第二出光面10一面形成破坏性结构的碳化结构8、11或凹陷结构13、14,以改变光反射元件16的光学特性,进一步降低发光二极管100的发光效能,使发光二极管100的发光效能介于预设容许值范围内。
在实施时,可预先准备多个由上述方法做成且具有不同光学特性的光反射元件16,在测量并计算发光二极管100的发光效能与预设标准值的差异值后,可根据此差异值搭配使用具有相对应光学特性的光反射元件16,以降低发光二极管100的发光效能,使发光二极管100的发光效能介于预设容许值范围内。During implementation, a plurality of
本发明发光二极管亮度控制方法利用电磁波光束或喷砂以物理冲击或化学侵蚀的方式改变发光二极管100发光进路径中光学元件的光学特性,以减低发光二极管100的发光效能,并可依照明发光二极管100发光效能与预设标准值之间的差异值改变发光二极管100发光进路径中光学元件的光学特性,使不同发光效能的发光二极管100具有一致的发光强度。The light-emitting diode brightness control method of the present invention uses electromagnetic wave beams or sandblasting to change the optical characteristics of the optical elements in the light-emitting path of the light-emitting
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