CN101625303A - Vacuum atomic force microscope and using method thereof - Google Patents
Vacuum atomic force microscope and using method thereof Download PDFInfo
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- CN101625303A CN101625303A CN200910030522A CN200910030522A CN101625303A CN 101625303 A CN101625303 A CN 101625303A CN 200910030522 A CN200910030522 A CN 200910030522A CN 200910030522 A CN200910030522 A CN 200910030522A CN 101625303 A CN101625303 A CN 101625303A
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- 238000010894 electron beam technology Methods 0.000 claims abstract description 24
- 238000003384 imaging method Methods 0.000 claims description 10
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q30/00—Auxiliary means serving to assist or improve the scanning probe techniques or apparatus, e.g. display or data processing devices
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Abstract
The invention discloses a vacuum atomic force microscope and a using method thereof, belonging to the field of micro-topography detecting equipment; the microscope comprises an electron beam launching device, a secondary electron detector, a probe with a cantilever, a piezoelectric ceramics scanner and a feedback controller. When in work, electron beams are irradiated to the cantilever of the probe; as the acting force between the probe and sample atoms causes the cantilever to become deformed; a secondary electron signal changes; the acting force between a pinpoint and the sample is controlled to be constant by the signal feedback; the pinpoint scans the surface of the sample point by point and can image surface topography of the sample. The currently common optical lever does not need to be drawn into the invention; the invention overcomes design difficulty brought about by the conventional atomic force microscope applied in vacuum environment, synthesizes two nanophase material characterization methods which are the advantages of the atomic force microscope and an electronic microscope, and can realize the continuous measuring on the material from millimeter size to the sub-nanometer size.
Description
Technical field
The present invention relates to a kind of microscopie unit, relate in particular to a kind of atomic force microscope system that is applied under the vacuum environment, belong to microscopic appearance checkout equipment field.
Background technology
Atomic force microscope can carry out the imaging of micro-nano precision to conductor, semiconductor, insulator surface, is a kind of strong characterization method in the researchs such as physics, chemistry, biology, materialogy.The principle of work of atomic force microscope is based on the interaction force between atom and the atom.When very sharp-pointed microprobe of semi-girder front end when vertically fully approaching sample surfaces to number nanometers even littler spacing, will produce interactional atomic force between the atom at microprobe tip and the atom of sample surfaces.There is certain curved line relation between atomic size and the spacing, by detecting the microscopic appearance that interatomic acting force can obtain sample surfaces.
The atomic force microscope that at present domestic and international manufacturer is produced all is to detect interatomic acting force by laser and quadrant photodetector, thereby obtains the surface information of testee.When laser is got on the semi-girder, because the continuous convergence sample surfaces of microprobe, make semi-girder be subjected to acting force between atom and small crooked deformation takes place, thereby cause catoptrical deflection, light spot position on the four-quadrant photo detector is changed, by detecting the variable quantity of light spot position, obtain the variable quantity of the crooked deformation of micro-cantilever, and then obtain dynamometry variable quantity and sample surfaces pattern.
Conventional atomic force microscope system is owing to need the deformation of optical system detection semi-girder, when being applied to vacuum environment, because the element of conventional light path system and the restriction of material character to realizing that condition of high vacuum degree has bigger influence, have therefore proposed very harsh requirement to its design.Owing to the obstruct of vacuum, operation such as the focusing of light path, aligning is also very difficult in addition.
Summary of the invention
In view of above-mentioned existing atomic force microscope is utilizing laser positioning in design and the inconvenience used under the vacuum environment, purpose of the present invention is intended to design a kind of vacuum atomic force microscope, with its distinctive working method the surface topography of various materials is carried out continuous probe from the micron to the nano-precision, solve the problem that the microscope sweep limit is less, be difficult to constituency scanning.
The technical scheme that realizes the object of the invention is:
A kind of vacuum atomic force microscope, comprise feedback controller, bottom anti-rattler and the vacuum chamber that links to each other with anti-rattler, it is characterized in that: comprise the piezoelectric scanner that is used to bear sample in the described vacuum chamber, be used for vertically near the band semi-girder of sample probe, be used for the secondary electron detector of detector probe semi-girder deformation, and the electron beam launcher that places the inboard top of vacuum chamber; Described feedback controller links to each other with the secondary electron detector forward direction, and with probe and piezoelectric scanner after to linking to each other.
Further, described electron beam launcher comprises the electron gun that is used to produce electron beam, is used for electromagnetic lens and scanning yoke to beam spot focuses on, the position is adjusted; Described probe comprises the semi-girder that is carried out the body of position control, extended from body by feedback controller, and the miniature needle point of being located at semi-girder one end; Described feedback controller comprises signal processing unit and scanning monitor, and wherein said signal processing unit links to each other with probe and secondary electron detector signal, and described scanning monitor links to each other with the piezoelectric scanner signal; Described feedback controller also is connected with main frame and attachment typed demonstration, storage, load module.
The work implementation of this vacuum atomic force microscope is: at first sample is positioned on the piezoelectric scanner, closes the environment that is evacuated behind the vacuum chamber; Produce and controlling electron beam by electron beam launcher then, shine on the micro cantilever probe and produce secondary electron signal; The needle point of then controlling probe is vertically near sample surfaces, and when needle point and sample interval are enough little and produce atomic force and do the time spent, secondary electron detector will detect the cantilever deflection of beam, starts feedback control system; Piezoelectric scanner changes the locus of sample, and feedback system real time altering needle point height makes needle point and sample surfaces keep a constant atom acting force; Needle point is sent to signal processing unit with respect to the altitude signal of sample each point, carries out the imaging and the demonstration of sample surfaces pattern.
A kind of vacuum atomic force microscope set forth in the present invention and using method thereof, the beneficial effect of its application implementation is embodied in:
(1) adopts the electron beam emission coefficient to detect the deformation of semi-girder, need not to introduce optical lever system commonly used at present, overcome the difficult design that conventional atomic force microscope is applied to bring under the vacuum environment;
(2) electron beam launcher and secondary electron detector can carry out imaging in a big way to semiconductor, conductor sample, realize constituency scanning; Scan-probe carries out more careful detection imaging to selected zone then, comprehensive two kinds of advantages that the nano material characterization method is atomic force microscope and electron microscope, realization is the continuous coverage from mm-scale to inferior nanoscale precision to material, it is convenient to have the constituency, sweep limit is big, and the high characteristics of resolution.
Below in conjunction with drawings and Examples, the design core of vacuum atomic force microscope of the present invention is done further nonrestrictive detailed description
Description of drawings
Fig. 1 is the structural representation of one embodiment of the invention;
Fig. 2 is an electrical signal structured flowchart of the present invention;
Fig. 3 is the workflow diagram of vacuum atomic force microscope of the present invention.
The implication of each Reference numeral is in the diagram:
1-electron beam launcher, 11-electron gun, 12-electromagnetic lens, 13-scanning yoke, 2-probe, 21-semi-girder, 22-needle point, 3 secondary electron detectors, 4-piezoelectric scanner, 5-vacuum chamber, 6-anti-rattler, 7-sample.
Embodiment
Shown in a specific embodiment structural representation of Fig. 1 vacuum atomic force microscope of the present invention system, this atomic force microscope mainly comprises the anti-rattler 6 of feedback controller, bottom, the vacuum chamber 5 that links to each other with anti-rattler 6, and be arranged at electron beam launcher 1, probe 2, secondary electron receiver 3 and piezoelectric scanner 4 in the vacuum chamber 5, wherein:
This electron beam launcher is made up of electron gun 11, electromagnetic lens 12 and scanning yoke 13.This electron gun 11 is used for producing electron beam; Electromagnetic lens 12 mainly plays converging action, can focus on step by step beam spot to dwindle; Scanning yoke 13 can be used to the position of controlling electron beam irradiation.
This secondary electron detector 3 is used for surveying the secondary electron signal that produces after electron beam affacts on the semi-girder.Secondary electron detector can realize that it comprises parts such as scintillation crystal, photoconductive tube, photomultiplier with scintillation counter.
This piezoelectric scanner 9 is used to place the sample of surface topography to be detected, and can make sample produce X, Y, Z three-D displacement; In order to increase the secondary electron yield, can make sample stage inclination certain angle.
This probe 2 is made of the needle point 22 of probe bodies, semi-girder 21 and semi-girder one end, and its effect is near sample 7 surfaces and produces interaction force that the deformation of semi-girder 22 can reflect the size of acting force.
This vacuum chamber 5 is used to provide the high vacuum working environment; And the effect of anti-rattler 6 is to reduce and the vibrations of eliminating external environment detect the influence of accuracy rate to atomic force microscope.
Shown in the electrical structure block diagram of a specific embodiment of Fig. 2 vacuum atomic force microscope of the present invention system, the electric connecting relation of atomic force microscope of the present invention system is as follows: this feedback controller comprises signal processing unit and two parts of scanning monitor, and the signal processing unit of this feedback controller links to each other with probe 2 and secondary electron detector 3 on the one hand.From signal flow always, signal processing unit and secondary electron detector 3 promptly receive the secondary electron signal from detector 3 for forward direction links to each other; And with probe 2 for the back to linking to each other, promptly to probe 2 output control signals, control the height of needle point 23 with respect to sample 7 surfaces.On the other hand, this scanning monitor and piezoelectric scanner 4 on the annexation of signal flow for the back to linking to each other, that is to piezoelectric scanner 4 output scanning displacement control signals, realization is to the point by point scanning under the sample 7 surperficial constituencies.In addition, this feedback controller is also to being externally connected with main frame and attachment typed demonstration, storage, load module.Be used for that testing crew is operated feedback controller and manifest the sample surfaces feature image that scans gained to testing crew.
Shown in the workflow diagram of Fig. 3 vacuum atomic force microscope of the present invention system.It realizes that the course of work that the sample surfaces pattern detects is:
What at first will do is the conventional experiment preparatory stage, is about to sample 7 and is positioned on the piezoelectric scanner 4, closes the environment that is evacuated behind the vacuum chamber 5; Produce and controlling electron beam by electron beam launcher 1 then, shine on the micro cantilever probe 22 and produce secondary electron signal; The needle point of control probe is vertically near sample surfaces.
Scanner controller makes sample surfaces by point by point scanning, because the height relief difference of sample surfaces zones of different, make that the size of interaction force changes between needle point 23 and the sample 7, cause the deformation of semi-girder 22, cause the secondary electron signal size also to change;
Then by feedback controller secondary electron signal is carried out the processor feedback, the needle point of control probe is vertically approaching or away from sample surfaces, real time altering needle point height makes needle point and sample surfaces keep a constant atom acting force;
Obtain the variation of needle point by feedback system, and transmit signals to signal processing unit, carry out the imaging and the demonstration of sample surfaces three-dimensional appearance with respect to the height relief of sample each point.
Especially, an important use mode of the present invention is to carry out constituency scanning, can realize the continuous coverage from mm-scale to inferior nanoscale precision to conductor, semiconductor material.Its implementation is: at first secondary electron is used for the zone of selected probe scanning directly to the sample surfaces imaging; Probe carries out scanning imagery to selected specific region then.The beneficial effect of its application implementation is embodied in: (1), employing electron beam emission coefficient detect the deformation of semi-girder, need not to introduce optical lever system commonly used at present, have overcome the difficult design that conventional atomic force microscope is applied to bring under the vacuum environment; (2), electron beam launcher and secondary electron detector can carry out imaging in a big way to semiconductor, conductor sample, the scanning of realization constituency; Scan-probe carries out more careful detection imaging to selected zone then, and comprehensive two kinds of advantages that the nano material characterization method is atomic force microscope and electron microscope have the constituency conveniently, and sweep limit is big, and the high characteristics of resolution.
In sum, to the exemplary detailed introduction of a kind of vacuum atomic force microscope of the present invention and working method thereof.Be intended to deepen understanding to essence of the present invention and beneficial effect.Be not to limit its multifarious embodiment and application protection domain with this; therefore simple modification and the equivalence of carrying out for the foregoing description in every case replaced; can realize the technical scheme of the creation purpose identical, all belong within the scope that this patent asks for protection with the present invention.
Claims (7)
1. vacuum atomic force microscope, comprise feedback controller, bottom anti-rattler and the vacuum chamber that is connected with anti-rattler, it is characterized in that: comprise the piezoelectric scanner that is used to bear sample in the described vacuum chamber, be used for vertically near the band semi-girder of sample probe, be used for the secondary electron detector of detector probe semi-girder deformation, and the electron beam launcher that places the inboard top of vacuum chamber; Described feedback controller links to each other with the secondary electron detector forward direction, and with probe and piezoelectric scanner after to linking to each other.
2. a kind of vacuum atomic force microscope according to claim 1 is characterized in that: described electron beam launcher comprises the electron gun that is used to produce electron beam, is used for electromagnetic lens and scanning yoke to beam spot focuses on, the position is adjusted.
3. a kind of vacuum atomic force microscope according to claim 1 is characterized in that: described probe comprises the semi-girder that is carried out the body of position control, extended from body by feedback controller, and the miniature needle point of being located at semi-girder one end.
4. a kind of vacuum atomic force microscope according to claim 1, it is characterized in that: described feedback controller comprises signal processing unit and scanning monitor, wherein said signal processing unit links to each other with probe and secondary electron detector signal, and described scanning monitor links to each other with the piezoelectric scanner signal.
5. a kind of vacuum atomic force microscope according to claim 1 is characterized in that: described feedback controller is connected with main frame and attachment typed demonstration, storage, load module.
6. the using method of the described a kind of vacuum atomic force microscope of claim 1 is characterized in that:
S1, sample is positioned on the piezoelectric scanner, closes the environment that is evacuated behind the vacuum chamber;
S2, produce and controlling electron beam, shine on the micro cantilever probe and produce secondary electron signal by electron beam launcher;
The needle point of S3, control probe is vertically near sample surfaces, and the generation atomic force is done the time spent when needle point and sample interval are enough little, and secondary electron detector will detect the cantilever deflection of beam, the startup feedback control system;
S4, control piezoelectric scanner change the locus of sample, and real time altering needle point height makes needle point and sample surfaces keep a constant atom acting force;
S5, obtain the height of needle point, and transmit signals to signal processing unit, carry out the imaging and the demonstration of sample surfaces pattern with respect to the sample each point by feedback controller.
7. the using method of a kind of vacuum atomic force microscope according to claim 6, it is characterized in that: the method for operation is controlled by feedback controller described in S3 and the S4, and the imaging results among the S5 is manifested to the external world by main frame external storage and display module.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009100305225A CN101625303B (en) | 2009-04-14 | 2009-04-14 | Vacuum atomic force microscope and using method thereof |
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| CN2009100305225A CN101625303B (en) | 2009-04-14 | 2009-04-14 | Vacuum atomic force microscope and using method thereof |
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Cited By (12)
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| WO2013013584A1 (en) * | 2011-07-26 | 2013-01-31 | 中国科学院物理研究所 | Nano graphics and ultra-wideband electromagnetic characteristic measurement system |
| CN103592818A (en) * | 2013-11-21 | 2014-02-19 | 中国科学院半导体研究所 | Positioning nanoimprint lithography system for preparation of patterned substrate by utilizing AFM (Atomic Force Microscope) probe |
| CN104568862A (en) * | 2013-10-25 | 2015-04-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | In-situ cathode luminescence and electron beam induced current acquisition device and method |
| CN106158567A (en) * | 2012-03-16 | 2016-11-23 | 株式会社日立高新技术 | Charged particle bundle device, sample viewing system |
| CN106198489A (en) * | 2016-08-10 | 2016-12-07 | 苏州华莱德电子科技有限公司 | A kind of molecule knot optical near-field microscopic system and building method thereof |
| CN108646056A (en) * | 2018-06-16 | 2018-10-12 | 金华职业技术学院 | A Method of Atomic Beam Microscopy with Variable Focus |
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| WO2024021616A1 (en) * | 2022-07-25 | 2024-02-01 | 中国科学院沈阳自动化研究所 | Scanning probe microscope scanning method based on high-speed instantaneous force control, and apparatus |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2549746B2 (en) * | 1990-05-08 | 1996-10-30 | 株式会社日立製作所 | Scanning tunnel microscope |
| JP3270165B2 (en) * | 1993-01-22 | 2002-04-02 | セイコーインスツルメンツ株式会社 | Surface analysis and processing equipment |
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| WO2013013584A1 (en) * | 2011-07-26 | 2013-01-31 | 中国科学院物理研究所 | Nano graphics and ultra-wideband electromagnetic characteristic measurement system |
| CN106158567A (en) * | 2012-03-16 | 2016-11-23 | 株式会社日立高新技术 | Charged particle bundle device, sample viewing system |
| CN106158567B (en) * | 2012-03-16 | 2017-12-15 | 株式会社日立高新技术 | Charged particle bundle device, sample observing system |
| CN104568862A (en) * | 2013-10-25 | 2015-04-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | In-situ cathode luminescence and electron beam induced current acquisition device and method |
| CN104568862B (en) * | 2013-10-25 | 2017-07-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | Cathode-luminescence and electron beam-induced induced current original-position collecting device and method |
| CN103592818A (en) * | 2013-11-21 | 2014-02-19 | 中国科学院半导体研究所 | Positioning nanoimprint lithography system for preparation of patterned substrate by utilizing AFM (Atomic Force Microscope) probe |
| CN103592818B (en) * | 2013-11-21 | 2016-08-17 | 中国科学院半导体研究所 | The location nano impression system of graph substrate prepared by the probe utilizing AFM |
| CN106198489B (en) * | 2016-08-10 | 2019-04-02 | 苏州华莱德电子科技有限公司 | A kind of molecule knot optical near-field microscopic system and its building method |
| CN106198489A (en) * | 2016-08-10 | 2016-12-07 | 苏州华莱德电子科技有限公司 | A kind of molecule knot optical near-field microscopic system and building method thereof |
| CN108646056A (en) * | 2018-06-16 | 2018-10-12 | 金华职业技术学院 | A Method of Atomic Beam Microscopy with Variable Focus |
| CN109665490A (en) * | 2018-12-29 | 2019-04-23 | 哈尔滨工业大学 | A kind of nanometer of attachment device and nano wire connection method |
| CN109704273A (en) * | 2018-12-29 | 2019-05-03 | 哈尔滨工业大学 | A kind of nanometer connection device and nanowire and electrode connection method |
| CN111103441A (en) * | 2019-12-11 | 2020-05-05 | 浙江大学 | Force clamp experiment method of biomembrane mechanical probe system with feedback control function |
| CN111122913A (en) * | 2019-12-11 | 2020-05-08 | 浙江大学 | Super-alignment force clamp experiment method based on biomembrane mechanics probe system |
| CN113588989A (en) * | 2021-07-27 | 2021-11-02 | 中国科学技术大学 | Scanning Casimir force microscope and method of use |
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