CN101609345A - Linear voltage regulator - Google Patents
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Abstract
本发明涉及一种线性电压调节器,属于电子技术领域。该线性电压调节器包括:误差放大器,其由一级折叠共源共栅放大器构成,用于比较参考电压Vref和结点NETF的反馈电压,并产生第一输出电压;输出放大电路,其包括功率PMOS管和分压电阻,功率PMOS管在所述第一输出电压的作用下产生第二输出电压Vout,分压电阻产生所述反馈电压;频率补偿电路,其包括压控电流源和补偿电容,用于接收所述反馈电压和所述第二输出电压Vout并产生与所述输出放大电路的极点相匹配的零点。本发明降低了线性电压调节器的复杂度,减少了频率补偿需要的电容数目,并且补偿电容的数值小,使线性电压调节器适合全芯片集成。
The invention relates to a linear voltage regulator and belongs to the field of electronic technology. The linear voltage regulator includes: an error amplifier, which is composed of a one-stage folded cascode amplifier, used to compare the reference voltage Vref and the feedback voltage of the node NETF, and generate a first output voltage; an output amplifier circuit, which includes a power A PMOS tube and a voltage dividing resistor, the power PMOS tube generates a second output voltage Vout under the action of the first output voltage, and the voltage dividing resistor generates the feedback voltage; a frequency compensation circuit, which includes a voltage-controlled current source and a compensation capacitor, It is used for receiving the feedback voltage and the second output voltage Vout and generating a zero point matched with a pole of the output amplifier circuit. The invention reduces the complexity of the linear voltage regulator, reduces the number of capacitors required for frequency compensation, and the value of the compensation capacitor is small, so that the linear voltage regulator is suitable for full-chip integration.
Description
技术领域 technical field
本发明涉及电子技术领域,尤其涉及一种线性电压调节器。The invention relates to the field of electronic technology, in particular to a linear voltage regulator.
背景技术 Background technique
线性电压调节器广泛用于便携式电子设备的电源供给,常规的线性电压调节器结构请参阅图1所示,其核心电路由误差放大器、输出放大电路和频率补偿电路组成,其中频率补偿电路由片外补偿电容Cp和串联电阻RESR组成。图1所示的线性电压调节器的工作原理是:如果负载RL发生变化使输出电压Vout降低,则输出电压Vout经过电阻R1和R2分压后反馈到误差放大器正端的电压也降低,由于参考电压Vref保持不变,因此误差放大器的输出电压降低,于是通过功率P沟道金属氧化物半导体管(P-Channel Metal Oxide Semiconductor,PMOS)MP的电流增加,从而使Vout升高,电路恢复平衡,输出电压稳定;反之,如果输出电压Vout升高,则反馈到误差放大器正端的电压升高,误差放大器的输出电压升高,于是通过功率PMOS管MP的电流减小,从而使Vout降低,电路恢复平衡。Linear voltage regulators are widely used in the power supply of portable electronic devices. The structure of conventional linear voltage regulators is shown in Figure 1. Its core circuit is composed of error amplifier, output amplifier circuit and frequency compensation circuit. The frequency compensation circuit consists of a chip It is composed of external compensation capacitor Cp and series resistor R ESR . The working principle of the linear voltage regulator shown in Figure 1 is: if the load RL changes to reduce the output voltage Vout, the output voltage Vout is divided by the resistors R1 and R2 and the voltage fed back to the positive terminal of the error amplifier is also reduced, because the reference voltage Vref remains unchanged, so the output voltage of the error amplifier decreases, so the current through the power P-channel metal oxide semiconductor (P-Channel Metal Oxide Semiconductor, PMOS) MP increases, so that Vout increases, the circuit restores balance, and the output The voltage is stable; on the contrary, if the output voltage Vout increases, the voltage fed back to the positive terminal of the error amplifier increases, and the output voltage of the error amplifier increases, so the current through the power PMOS transistor MP decreases, thereby reducing Vout, and the circuit restores balance .
图1所示的线性电压调节器,频率补偿电容Cp和串联电阻RESR产生一个零点,其频率如下:In the linear voltage regulator shown in Figure 1, the frequency compensating capacitor Cp and the series resistor R ESR produce a zero whose frequency is given by:
该零点用于抵消电路的极点,为电压调节器提供足够的相位裕度,使电路保持稳定。This zero is used to cancel out the poles of the circuit, giving the voltage regulator enough phase margin to keep the circuit stable.
图2所示的电路为误差放大器通常采用的两级放大器结构,如果采用该结构,则线性电压调节器为三级放大器结构,这样为了保持电路的稳定性,需要补偿电容数目通常要多于三个,补偿电路比较复杂。另外,补偿电容Cp的数值通常为μF级,不能片上集成。The circuit shown in Figure 2 is a two-stage amplifier structure commonly used by error amplifiers. If this structure is adopted, the linear voltage regulator has a three-stage amplifier structure. In order to maintain the stability of the circuit, the number of compensation capacitors usually needs to be more than three. One, the compensation circuit is more complex. In addition, the value of the compensation capacitor Cp is usually at the μF level, which cannot be integrated on-chip.
随着片上系统(system on chip,SoC)规模的不断增加以及便携式设备的迅猛发展,可以全芯片集成的线性电压调节器受到人们越来越多的关注。但常规的线性电压调节器由于上述缺点不能全芯片集成,因此不能适应片上系统规模的增加以及便携式设备的发展。With the continuous increase of system on chip (system on chip, SoC) scale and the rapid development of portable devices, linear voltage regulators that can be integrated on a chip have attracted more and more attention. However, conventional linear voltage regulators cannot be fully integrated due to the aforementioned disadvantages, and thus cannot adapt to the increase in the scale of SoCs and the development of portable devices.
发明内容 Contents of the invention
为了解决现有的线性电压调节器中的误差放大器结构复杂以及线性电压调节器无法全芯片集成的技术问题,本发明提供了一种无需片外补偿电容的线性电压调节器,其目的在于,在不降低电路性能的情况下,简化线性电压调节器的结构,从而简化补偿电路,减少补偿电容的数目,降低补偿电容的数值,使线性电压调节器适合全芯片集成。In order to solve the technical problem that the structure of the error amplifier in the existing linear voltage regulator is complex and the linear voltage regulator cannot be fully integrated, the present invention provides a linear voltage regulator that does not need an off-chip compensation capacitor. Without degrading circuit performance, the structure of the linear voltage regulator is simplified, thereby simplifying the compensation circuit, reducing the number of compensation capacitors, reducing the value of the compensation capacitor, and making the linear voltage regulator suitable for full-chip integration.
本发明提供了一种线性电压调节器,包括:The present invention provides a linear voltage regulator, including:
误差放大器,其由一级折叠共源共栅放大器构成,用于比较参考电压Vref和结点NETF的反馈电压,并产生第一输出电压;An error amplifier, which is composed of a one-stage folded cascode amplifier, is used to compare the reference voltage Vref and the feedback voltage of the node NETF, and generate a first output voltage;
输出放大电路,其包括功率PMOS管和分压电阻,所述功率PMOS管在所述第一输出电压的作用下产生第二输出电压Vout,所述分压电阻根据所述第二输出电压Vout产生所述反馈电压;An output amplification circuit, which includes a power PMOS transistor and a voltage dividing resistor, the power PMOS transistor generates a second output voltage Vout under the action of the first output voltage, and the voltage dividing resistor generates a second output voltage Vout according to the second output voltage Vout said feedback voltage;
频率补偿电路,其包括压控电流源和补偿电容,用于接收所述反馈电压和所述第二输出电压Vout,并产生与所述输出放大电路的极点相匹配的零点。A frequency compensation circuit, which includes a voltage-controlled current source and a compensation capacitor, is used to receive the feedback voltage and the second output voltage Vout, and generate a zero point that matches the pole of the output amplifier circuit.
所述误差放大器包括:The error amplifier includes:
第一PMOS管Mp1,其栅极与第一偏置电压Vb1相连接,源极与电源电压VDD相连接;The gate of the first PMOS transistor Mp1 is connected to the first bias voltage Vb1, and the source is connected to the power supply voltage VDD;
第二PMOS管Mp2,其源极与所述第一PMOS管Mp1的漏极相连接,其栅极与所述结点NETF连接;The source of the second PMOS transistor Mp2 is connected to the drain of the first PMOS transistor Mp1, and the gate is connected to the node NETF;
第三PMOS管Mp3,其源极与所述第一PMOS管Mp1的漏极相连接,其栅极与参考电压Vref相连接;The source of the third PMOS transistor Mp3 is connected to the drain of the first PMOS transistor Mp1, and the gate is connected to the reference voltage Vref;
第四PMOS管Mp4,其源极与所述电源电压VDD相连接;The source of the fourth PMOS transistor Mp4 is connected to the power supply voltage VDD;
第五PMOS管Mp5,其源极与所述电源电压VDD相连接;The source of the fifth PMOS transistor Mp5 is connected to the power supply voltage VDD;
第六PMOS管Mp6,其源极与所述第四PMOS管Mp4的漏极相连接,其栅极与第四偏置电压Vb4相连接,其漏极分别与所述第四PMOS管Mp4的栅极和所述第五PMOS管Mp5的栅极相连接;The sixth PMOS transistor Mp6 has its source connected to the drain of the fourth PMOS transistor Mp4, its gate connected to the fourth bias voltage Vb4, and its drain connected to the gate of the fourth PMOS transistor Mp4 respectively. The pole is connected to the gate of the fifth PMOS transistor Mp5;
第七PMOS管Mp7,其源极与所述第五PMOS管Mp5的漏极相连接,其栅极与所述第四偏置电压Vb4相连接;The source of the seventh PMOS transistor Mp7 is connected to the drain of the fifth PMOS transistor Mp5, and the gate is connected to the fourth bias voltage Vb4;
第一NMOS管Mn1,其源极接地,其栅极与第二偏置电压Vb2相连接,其漏极与所述第二PMOS管Mp2的漏极相连接;The source of the first NMOS transistor Mn1 is grounded, the gate is connected to the second bias voltage Vb2, and the drain is connected to the drain of the second PMOS transistor Mp2;
第二NMOS管Mn2,其源极接地,其栅极与所述第二偏置电压Vb2相连接,其漏极与所述第三PMOS管Mp3的漏极相连接;The source of the second NMOS transistor Mn2 is grounded, the gate thereof is connected to the second bias voltage Vb2, and the drain thereof is connected to the drain of the third PMOS transistor Mp3;
第三NMOS管Mn3,其源极与所述第一NMOS管Mn1的漏极相连接,栅极与第三偏置电压Vb3相连接,其漏极与所述第六PMOS管Mp6的漏极相连接;The third NMOS transistor Mn3 has its source connected to the drain of the first NMOS transistor Mn1, its gate connected to the third bias voltage Vb3, and its drain connected to the drain of the sixth PMOS transistor Mp6. connect;
第四NMOS管Mn4,其源极与所述第二NMOS管Mn2的漏极相连接,其栅极与所述第三偏置电压Vb3相连接,其漏极与所述第七PMOS管Mp7的漏极相连接;The fourth NMOS transistor Mn4 has its source connected to the drain of the second NMOS transistor Mn2, its gate connected to the third bias voltage Vb3, and its drain connected to the seventh PMOS transistor Mp7. The drain is connected;
所述第七PMOS管Mp7的漏极和所述第四NMOS管Mn4的漏极相连接,并产生所述误差放大器的第一输出电压,用于控制所述输出放大电路。The drain of the seventh PMOS transistor Mp7 is connected to the drain of the fourth NMOS transistor Mn4 to generate a first output voltage of the error amplifier for controlling the output amplifier circuit.
所述输出放大电路包括:The output amplifier circuit includes:
第八PMOS管Mp8,其源极与所述电源电压VDD相连接,其栅极接收所述第一输出电压,其漏极提供所述第二输出电压Vout;The eighth PMOS transistor Mp8 has its source connected to the power supply voltage VDD, its gate receiving the first output voltage, and its drain providing the second output voltage Vout;
第一电容C1,其一端与所述第二输出电压Vout相连接,另一端接地;a first capacitor C1, one end of which is connected to the second output voltage Vout, and the other end is grounded;
第一电阻R1,其一端与所述第二输出电压Vout相连接,另一端与所述第二PMOS管Mp2的栅极相连接;A first resistor R1, one end of which is connected to the second output voltage Vout, and the other end is connected to the gate of the second PMOS transistor Mp2;
第二电阻R2,其一端与所述第一电阻R1相连接,另一端接地;A second resistor R2, one end of which is connected to the first resistor R1, and the other end is grounded;
所述第一电阻R1和所述第二电阻R2相连接,形成反馈结点NETF,反馈到所述第二PMOS管Mp2的栅极。The first resistor R1 and the second resistor R2 are connected to form a feedback node NETF, which is fed back to the gate of the second PMOS transistor Mp2.
所述频率补偿电路包括:The frequency compensation circuit includes:
第五NMOS管Mn5,其栅极与所述第二偏置电压Vb2相连接,其源极接地;The fifth NMOS transistor Mn5, the gate of which is connected to the second bias voltage Vb2, and the source of which is grounded;
第六NMOS管Mn6,其栅极与所述第二偏置电压Vb2相连接,其源极接地;The sixth NMOS transistor Mn6, the gate of which is connected to the second bias voltage Vb2, and the source of which is grounded;
第七NMOS管Mn7,其栅极与所述第三偏置电压Vb3相连接,其源极与所述第五NMOS管Mn5的漏极相连接;A seventh NMOS transistor Mn7, the gate of which is connected to the third bias voltage Vb3, and the source of which is connected to the drain of the fifth NMOS transistor Mn5;
第八NMOS管Mn8,其栅极与所述第三偏置电压Vb3相连接,其源极与所述第六NMOS管Mn6的漏极相连接;An eighth NMOS transistor Mn8, the gate of which is connected to the third bias voltage Vb3, and the source of which is connected to the drain of the sixth NMOS transistor Mn6;
第九NMOS管Mn9,其栅极与所述第二输出电压Vout相连接,其源极与所述第八NMOS管Mn8的漏极相连接;The ninth NMOS transistor Mn9, the gate of which is connected to the second output voltage Vout, and the source of which is connected to the drain of the eighth NMOS transistor Mn8;
第二电容C2,其一端与所述第八NMOS管Mn8的漏极相连接,另一端接地;The second capacitor C2, one end of which is connected to the drain of the eighth NMOS transistor Mn8, and the other end is grounded;
第九PMOS管Mp9,其栅极与第四偏置电压Vb4相连接,其漏极与所述第七NMOS管Mn7的漏极相连接;The gate of the ninth PMOS transistor Mp9 is connected to the fourth bias voltage Vb4, and the drain is connected to the drain of the seventh NMOS transistor Mn7;
第十PMOS管Mp10,其栅极与所述第四偏置电压Vb4相连接,其漏极与所述第九NMOS管Mn9的漏极相连接;The tenth PMOS transistor Mp10, the gate of which is connected to the fourth bias voltage Vb4, and the drain of which is connected to the drain of the ninth NMOS transistor Mn9;
第十一PMOS管Mp11,其栅极与所述第十PMOS管Mp10的漏极相连接,漏极与所述第九PMOS管Mp9的源极相连接,其源极与所述电源电压VDD相连接;The eleventh PMOS transistor Mp11 has its gate connected to the drain of the tenth PMOS transistor Mp10, its drain connected to the source of the ninth PMOS transistor Mp9, and its source connected to the power supply voltage VDD. connect;
第十二PMOS管Mp12,其栅极与所述第十PMOS管Mp10的漏极相连接,其漏极与所述第十PMOS管Mp10的源极相连接,其源极与所述电源电压VDD相连接。The gate of the twelfth PMOS transistor Mp12 is connected to the drain of the tenth PMOS transistor Mp10, the drain is connected to the source of the tenth PMOS transistor Mp10, and the source is connected to the power supply voltage VDD connected.
所述第一偏置电压Vb1使所述第一PMOS管Mp1位于饱和区;所述第二偏置电压Vb2使所述第一NMOS管Mn1、所述第二NMOS管Mn2、所述第五NMOS管Mn5以及所述第六NMOS管Mn6位于饱和区;所述第三偏置电压Vb3使所述第三NMOS管Mn3、所述第四NMOS管Mn4、所述第七NMOS管Mn7以及所述第八NMOS管Mn8位于饱和区;所述第四偏置电压Vb4使所述第六PMOS管Mp6、所述第七PMOS管Mp7、所述第九PMOS管Mp9以及所述第十PMOS管Mp10位于饱和区。The first bias voltage Vb1 makes the first PMOS transistor Mp1 located in a saturation region; the second bias voltage Vb2 makes the first NMOS transistor Mn1, the second NMOS transistor Mn2, and the fifth NMOS transistor Mn2 The transistor Mn5 and the sixth NMOS transistor Mn6 are located in the saturation region; the third bias voltage Vb3 makes the third NMOS transistor Mn3, the fourth NMOS transistor Mn4, the seventh NMOS transistor Mn7 and the sixth NMOS transistor Mn7 The eight NMOS transistors Mn8 are in the saturation region; the fourth bias voltage Vb4 makes the sixth PMOS transistor Mp6, the seventh PMOS transistor Mp7, the ninth PMOS transistor Mp9, and the tenth PMOS transistor Mp10 in a saturated region district.
本发明具有以下有益效果:本发明降低了线性电压调节器的复杂度,减少了频率补偿需要的电容数目,并且补偿电容的数值小,使线性电压调节器适合全芯片集成。The invention has the following beneficial effects: the invention reduces the complexity of the linear voltage regulator, reduces the number of capacitors required for frequency compensation, and the value of the compensation capacitor is small, making the linear voltage regulator suitable for full-chip integration.
附图说明 Description of drawings
图1是现有技术中常规线性电压调节器结构示意图;Fig. 1 is a schematic structural diagram of a conventional linear voltage regulator in the prior art;
图2是现有技术中常规线性电压调节器中误差放大器结构示意图;FIG. 2 is a structural schematic diagram of an error amplifier in a conventional linear voltage regulator in the prior art;
图3是本发明提供的无需片外补偿电容的线性电压调节器的电路示意图;3 is a schematic circuit diagram of a linear voltage regulator without an off-chip compensation capacitor provided by the present invention;
图4是本发明没有频率补偿电路时输出节点的等效小信号负载;Fig. 4 is the equivalent small signal load of the output node when there is no frequency compensation circuit in the present invention;
图5是本发明有频率补偿电路时输出节点的等效小信号负载;Fig. 5 is the equivalent small signal load of the output node when the present invention has the frequency compensation circuit;
图6是本发明的环路增益示意图。Fig. 6 is a schematic diagram of the loop gain of the present invention.
具体实施方式 Detailed ways
下面结合附图,对本发明做进一步的详细描述。The present invention will be described in further detail below in conjunction with the accompanying drawings.
本发明提供的无需片外补偿电容的线性电压调节器的电路示意图,如图3所示,其包括误差放大器、输出放大电路和频率补偿电路。The circuit schematic diagram of the linear voltage regulator without off-chip compensation capacitor provided by the present invention is shown in FIG. 3 , which includes an error amplifier, an output amplifier circuit and a frequency compensation circuit.
误差放大器,其由一级折叠共源共栅放大器构成,用于比较参考电压Vref和结点NETF的反馈电压,产生控制电压;An error amplifier, which is composed of a one-stage folded cascode amplifier, is used to compare the reference voltage Vref and the feedback voltage of the node NETF to generate a control voltage;
输出放大电路,其包括功率PMOS管和两个分压电阻,功率PMOS管在所述控制电压的作用下产生输出电压Vout,两个分压电阻产生所述反馈电压。输出节点有一个可片上集成的电容,用于改善本发明所述线性电压调节器的瞬态响应特性;The output amplifying circuit includes a power PMOS transistor and two voltage dividing resistors, the power PMOS transistor generates the output voltage Vout under the action of the control voltage, and the two voltage dividing resistors generate the feedback voltage. The output node has a capacitor that can be integrated on-chip, which is used to improve the transient response characteristics of the linear voltage regulator of the present invention;
频率补偿电路,其包括压控电流源和补偿电容,产生零点,使电路稳定工作。The frequency compensation circuit, which includes a voltage-controlled current source and a compensation capacitor, generates a zero point to make the circuit work stably.
其中误差放大器包括:Where the error amplifier includes:
第一PMOS管Mp1,其栅极与偏置电压Vb1相连接,源极与电源电压VDD相连接;The gate of the first PMOS transistor Mp1 is connected to the bias voltage Vb1, and the source is connected to the power supply voltage VDD;
第二PMOS管Mp2,其源极与所述第一PMOS管Mp1的漏极相连接;The source of the second PMOS transistor Mp2 is connected to the drain of the first PMOS transistor Mp1;
第三PMOS管Mp3,其源极与所述第一PMOS管Mp1的漏极相连接,栅极与参考电压Vref相连接;The source of the third PMOS transistor Mp3 is connected to the drain of the first PMOS transistor Mp1, and the gate is connected to the reference voltage Vref;
第四PMOS管Mp4,其源极与电源电压VDD相连接;The source of the fourth PMOS transistor Mp4 is connected to the power supply voltage VDD;
第五PMOS管Mp5,其源极与电源电压VDD相连接;The source of the fifth PMOS transistor Mp5 is connected to the power supply voltage VDD;
第六PMOS管Mp6,其源极与所述第四PMOS管Mp4的漏极相连接,栅极与偏置电压Vb4相连接,漏极与所述第四PMOS管Mp4的栅极和所述第五PMOS管Mp5的栅极相连接;The sixth PMOS transistor Mp6 has its source connected to the drain of the fourth PMOS transistor Mp4, its gate connected to the bias voltage Vb4, and its drain connected to the gate of the fourth PMOS transistor Mp4 and the fourth PMOS transistor Mp4. The gates of the five PMOS transistors Mp5 are connected;
第七PMOS管Mp7,其源极与所述第五PMOS管Mp5的漏极相连接,栅极与偏置电压Vb4相连接;The source of the seventh PMOS transistor Mp7 is connected to the drain of the fifth PMOS transistor Mp5, and the gate is connected to the bias voltage Vb4;
第一N沟道金属氧化物半导体(N-Channel Metal Oxide Semiconductor,NMOS)管Mn1,其源极接地,栅极与偏置电压Vb2相连接,漏极与所述第二PMOS管Mp2的漏极相连接;The first N-channel Metal Oxide Semiconductor (N-Channel Metal Oxide Semiconductor, NMOS) transistor Mn1, its source is grounded, the gate is connected to the bias voltage Vb2, and the drain is connected to the drain of the second PMOS transistor Mp2 connected;
第二NMOS管Mn2,其源极接地,栅极与偏置电压Vb2相连接,漏极与所述第三PMOS管Mp3的漏极相连接;The source of the second NMOS transistor Mn2 is grounded, the gate is connected to the bias voltage Vb2, and the drain is connected to the drain of the third PMOS transistor Mp3;
第三NMOS管Mn3,其源极与所述第一NMOS管Mn1的漏极相连接,栅极与偏置电压Vb3相连接,漏极与所述第六PMOS管Mp6的漏极相连接;The source of the third NMOS transistor Mn3 is connected to the drain of the first NMOS transistor Mn1, the gate is connected to the bias voltage Vb3, and the drain is connected to the drain of the sixth PMOS transistor Mp6;
第四NMOS管Mn4,其源极与所述第二NMOS管Mn2的漏极相连接,栅极与偏置电压Vb3相连接,漏极与所述第七PMOS管Mp7的漏极相连接;The source of the fourth NMOS transistor Mn4 is connected to the drain of the second NMOS transistor Mn2, the gate is connected to the bias voltage Vb3, and the drain is connected to the drain of the seventh PMOS transistor Mp7;
所述第七PMOS管Mp7的漏极和第四NMOS管Mn4的漏极相连接产生所述误差放大器的输出电压。The drain of the seventh PMOS transistor Mp7 is connected to the drain of the fourth NMOS transistor Mn4 to generate the output voltage of the error amplifier.
其中输出放大电路包括:The output amplifier circuit includes:
第八PMOS管Mp8,其源极与电源电压VDD相连接,栅极与所述误差放大器的输出电压相连接,漏极提供输出电压Vout;The source of the eighth PMOS transistor Mp8 is connected to the power supply voltage VDD, the gate is connected to the output voltage of the error amplifier, and the drain provides the output voltage Vout;
第一电容C1,其一端与所述输出电压Vout相连接,另一端接地;a first capacitor C1, one end of which is connected to the output voltage Vout, and the other end is grounded;
第一电阻R1,其一端与所述输出电压Vout相连接,另一端与所述第二PMOS管Mp2的栅极相连接;A first resistor R1, one end of which is connected to the output voltage Vout, and the other end is connected to the gate of the second PMOS transistor Mp2;
第二电阻R2,其一端与所述第一电阻R1相连接,另一端接地;A second resistor R2, one end of which is connected to the first resistor R1, and the other end is grounded;
所述第一电阻R1和第二电阻R2相连接,形成反馈结点NETF,反馈到所述第二PMOS管Mp2的栅极;The first resistor R1 and the second resistor R2 are connected to form a feedback node NETF, which is fed back to the gate of the second PMOS transistor Mp2;
其中频率补偿电路包括:The frequency compensation circuit includes:
第五NMOS管Mn5,其栅极与偏置电压Vb2相连接,源极接地;The fifth NMOS transistor Mn5, the gate of which is connected to the bias voltage Vb2, and the source of which is grounded;
第六NMOS管Mn6,其栅极与偏置电压Vb2相连接,源极接地;The sixth NMOS transistor Mn6, the gate of which is connected to the bias voltage Vb2, and the source of which is grounded;
第七NMOS管Mn7,其栅极与偏置电压Vb3相连接,源极与所述第五NMOS管Mn5的漏极相连接;The gate of the seventh NMOS transistor Mn7 is connected to the bias voltage Vb3, and the source is connected to the drain of the fifth NMOS transistor Mn5;
第八NMOS管Mn8,其栅极与偏置电压Vb3相连接,源极与所述第六NMOS管Mn6的漏极相连接;The gate of the eighth NMOS transistor Mn8 is connected to the bias voltage Vb3, and the source is connected to the drain of the sixth NMOS transistor Mn6;
第九NMOS管Mn9,其栅极与输出电压Vout相连接,源极与所述第八NMOS管Mn8的漏极相连接;The ninth NMOS transistor Mn9 has its gate connected to the output voltage Vout, and its source connected to the drain of the eighth NMOS transistor Mn8;
第二电容C2,其一端与所述第八NMOS管Mn8的漏极相连接,另一端接地;The second capacitor C2, one end of which is connected to the drain of the eighth NMOS transistor Mn8, and the other end is grounded;
第九PMOS管Mp9,其栅极与偏置电压Vb4相连接,漏极与所述第七NMOS管Mn7的漏极相连接;The gate of the ninth PMOS transistor Mp9 is connected to the bias voltage Vb4, and the drain is connected to the drain of the seventh NMOS transistor Mn7;
第十PMOS管Mp10,其栅极与偏置电压Vb4相连接,漏极与所述第九NMOS管Mn9的漏极相连接;The gate of the tenth PMOS transistor Mp10 is connected to the bias voltage Vb4, and the drain is connected to the drain of the ninth NMOS transistor Mn9;
第十一PMOS管Mp11,其栅极与所述第十PMOS管Mp10的漏极相连接,漏极与所述第九PMOS管Mp9的源极相连接,源极与电源电压VDD相连接;The eleventh PMOS transistor Mp11, the gate of which is connected to the drain of the tenth PMOS transistor Mp10, the drain is connected to the source of the ninth PMOS transistor Mp9, and the source is connected to the power supply voltage VDD;
第十二PMOS管Mp12,其栅极与所述第十PMOS管Mp10的漏极相连接,漏极与所述第十PMOS管Mp10的源极相连接,源极与电源电压VDD相连接。The gate of the twelfth PMOS transistor Mp12 is connected to the drain of the tenth PMOS transistor Mp10, the drain is connected to the source of the tenth PMOS transistor Mp10, and the source is connected to the power supply voltage VDD.
偏置电压Vb1、Vb2、Vb3和Vb4在取值时应保证本发明中MOS管处于饱和区。The values of the bias voltages Vb1, Vb2, Vb3 and Vb4 should ensure that the MOS transistors in the present invention are in the saturation region.
与图1所示的常规的线性电压调节器不同,本发明提供的线性电压调节器的误差放大器为一级折叠共源共栅放大器,这样本发明的线性电压调节器为两级放大器结构,可以降低频率补偿电路的复杂度;本发明提供的线性电压调节器的频率补偿电路采用压控电流源结构,所需要的补偿电容的数值小,非常适合全芯片集成。Different from the conventional linear voltage regulator shown in Figure 1, the error amplifier of the linear voltage regulator provided by the present invention is a one-stage folded cascode amplifier, so that the linear voltage regulator of the present invention has a two-stage amplifier structure, which can Reduce the complexity of the frequency compensation circuit; the frequency compensation circuit of the linear voltage regulator provided by the present invention adopts a voltage-controlled current source structure, and the value of the required compensation capacitor is small, which is very suitable for full-chip integration.
下面分析本发明的频率补偿电路对环路特性的影响,本发明提供的无需片外补偿电容的线性电压调节器,当去掉频率补偿电路时,输出节点Vout的小信号等效负载可以简化为图4所示的电阻电容网络,其中rds为功率PMOS管的小信号电阻,则在Vout节点处的极点频率为:The impact of the frequency compensation circuit of the present invention on the loop characteristics is analyzed below. The linear voltage regulator provided by the present invention does not need an off-chip compensation capacitor. When the frequency compensation circuit is removed, the small-signal equivalent load of the output node Vout can be simplified as shown in FIG. The resistor-capacitor network shown in 4, where rds is the small-signal resistor of the power PMOS tube, then the pole frequency at the Vout node is:
当采用本发明的频率补偿电路时,由于其为压控电流源结构,输出节点Vout的小信号等效负载可以简化为图5所示的网络,其中,压控电流i大小为:When the frequency compensation circuit of the present invention is adopted, since it is a voltage-controlled current source structure, the small-signal equivalent load of the output node Vout can be simplified as the network shown in Figure 5, wherein the size of the voltage-controlled current i is:
i=S*C2*Vout (3)i=S*C2*Vout (3)
式中C2为频率补偿电路中的电容,S=jw为复频率。根据图5所示的网络可以得到,采用本发明的频率补偿电路后,产生一个零点,其频率为:In the formula, C2 is the capacitance in the frequency compensation circuit, and S=jw is the complex frequency. Can obtain according to the network shown in Figure 5, after adopting the frequency compensation circuit of the present invention, produce a zero point, its frequency is:
该零点用于抵消电路的一个极点,使电路保持稳定。This zero is used to cancel out one pole of the circuit, making the circuit stable.
图1中电容Cp的数值通常为μF级,不能集成在芯片上。而本发明中电容C1的数值一般为30pF到50pF,电容C2的值小于1pF,因此C1和C2都能集成在芯片上。The value of the capacitor Cp in Fig. 1 is usually in the μF level, which cannot be integrated on the chip. In the present invention, the value of the capacitor C1 is generally 30pF to 50pF, and the value of the capacitor C2 is less than 1pF, so both C1 and C2 can be integrated on the chip.
另外,本发明中误差放大器采用一级折叠共源共栅放大器结构,在简化频率补偿电路的同时,可以保证线性电压调节器精度,图6给出了本发明的环路增益,可以看出本发明的环路增益很高,这样就保证的本发明提供的线性电压调节器的高精度。In addition, the error amplifier in the present invention adopts a one-stage folded cascode amplifier structure, which can ensure the accuracy of the linear voltage regulator while simplifying the frequency compensation circuit. Figure 6 shows the loop gain of the present invention, and it can be seen that the The loop gain of the invention is very high, thus ensuring the high precision of the linear voltage regulator provided by the invention.
本发明中的误差放大器采用一级折叠共源共栅放大器,使得本发明所述的线性电压调节器为两级放大器结构,有利于减少频率补偿需要的电容数目,简化补偿电路的复杂度;本发明中补偿电路采用压控电流源结构,只需要一个补偿电容,并且电容数值小,非常适合全芯片集成;本发明中误差放大器采用一级折叠共源共栅放大器,使得本发明提出的电压调节器具有很好的电源抑制比特性。The error amplifier in the present invention adopts a one-stage folded cascode amplifier, so that the linear voltage regulator described in the present invention has a two-stage amplifier structure, which is conducive to reducing the number of capacitors required for frequency compensation and simplifying the complexity of the compensation circuit; The compensation circuit in the invention adopts a voltage-controlled current source structure, and only one compensation capacitor is needed, and the capacitance value is small, which is very suitable for full-chip integration; the error amplifier in the invention uses a one-stage folded cascode amplifier, so that the voltage adjustment proposed by the invention The device has very good power supply rejection ratio characteristics.
本领域的技术人员在不脱离权利要求书确定的本发明的精神和范围的条件下,还可以对以上内容进行各种各样的修改。因此本发明的范围并不仅限于以上的说明,而是由权利要求书的范围来确定的。Various modifications can be made to the above contents by those skilled in the art without departing from the spirit and scope of the present invention defined by the claims. Therefore, the scope of the present invention is not limited to the above description, but is determined by the scope of the claims.
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CN102545815A (en) * | 2010-11-03 | 2012-07-04 | Nxp股份有限公司 | Integrated circuit capacitor |
CN102707755A (en) * | 2012-05-30 | 2012-10-03 | 西安航天民芯科技有限公司 | Linear voltage regulator with built-in compensation capacitor |
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US6975099B2 (en) * | 2004-02-27 | 2005-12-13 | Texas Instruments Incorporated | Efficient frequency compensation for linear voltage regulators |
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CN102545815A (en) * | 2010-11-03 | 2012-07-04 | Nxp股份有限公司 | Integrated circuit capacitor |
CN102545815B (en) * | 2010-11-03 | 2015-06-10 | Nxp股份有限公司 | Integrated circuit capacitor |
CN102707755A (en) * | 2012-05-30 | 2012-10-03 | 西安航天民芯科技有限公司 | Linear voltage regulator with built-in compensation capacitor |
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CN109116901A (en) * | 2018-10-31 | 2019-01-01 | 上海艾为电子技术股份有限公司 | A kind of linear voltage-stabilizing circuit and integrated circuit |
CN109116901B (en) * | 2018-10-31 | 2023-09-15 | 上海艾为电子技术股份有限公司 | Linear voltage stabilizing circuit and integrated circuit |
CN111831041A (en) * | 2019-04-15 | 2020-10-27 | 爱思开海力士有限公司 | Voltage generator, semiconductor device and semiconductor system using voltage generator |
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