CN101593667B - Method for improving consistency of thickness of dielectric layers deposited on different substrates - Google Patents
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Abstract
A method for improving consistency of thickness of dielectric layers deposited on different substrates is applied to a deposition device provided with at least two deposition chambers, including: different substrates are sent to different deposition chambers, deposition technology is carried out on the substrates in different deposition chambers, and a dielectric layer is formed on the different substrates; wherein, the deposition chamber is washed before the substrate is sent to the deposition chamber, and the time difference of the time when the washing on each deposition chamber is finished and the time when the deposition on the deposition chamber starts is the same. The invention also provides a method for adjusting the thickness of the dielectric layer deposited on the substrate. The invention can reduce or avoid thickness difference of the dielectric layers deposited on the substrates caused by the time difference, thus improving the consistency of the thickness of dielectric layers deposited on different substrates.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a method for improving the thickness consistency of dielectric layers deposited on different substrates.
Background
In the manufacturing process of a semiconductor integrated circuit, after the device of the front stage is manufactured, the device formed of the front stage needs to be connected by a metal interconnection process of the rear stage. At present, copper is commonly used in the industry as a back-end interconnection metal, and different copper interconnection metal layers are isolated by a low dielectric constant dielectric layer. The copper interconnect metal layer is formed by a damascene process or a dual damascene process.
In the damascene process or the dual damascene process, a dielectric layer with a low dielectric constant is formed, then an opening is etched in the dielectric layer, and copper is filled into the opening, so that a copper damascene structure or a dual damascene structure is formed.
Common dielectric layers with Low dielectric constants (Low K) include Fluorinated Silicate Glass (FSG), Black Diamond (BD), CORAL, etc., and the Low K dielectric layer is generally formed by performing a deposition process using a chemical vapor deposition apparatus. For example, a deposition apparatus disclosed in chinese patent application publication No. CN1918324A, the disclosed deposition apparatus includes 6 deposition chambers, and the specific structure thereof is referred to fig. 1 of the application document.
However, when a low-k dielectric layer is formed on a substrate by a chemical vapor deposition process in a deposition apparatus, contaminants may also be deposited on the inner wall of the chamber of the deposition apparatus. This is because, in the process of forming the low-k dielectric layer on the substrate surface, the inner wall of the chemical vapor deposition chamber is also exposed to the deposition atmosphere, and thus a film layer of the same material as the low-k dielectric layer is also deposited on the inner wall of the chamber.
The contaminants adhered to the inner wall of the chamber may be thickened and may peel off due to long-term accumulation of the contaminants, and the peeled contaminants may fall onto the surface of the substrate being processed to form defects, which may affect the yield of devices formed on the substrate. Therefore, the chamber of the chemical vapor deposition apparatus needs to be cleaned periodically to reduce the influence of the contamination of the sidewall on the substrate. For example, chinese patent application publication No. CN101063197A discloses a method for cleaning a chemical vapor deposition apparatus, in which the inner wall of a chemical vapor deposition chamber is cleaned by plasma of a gas containing fluorine. In the prior art, plasma of NF3 is often used to clean the inner walls of a chemical vapor deposition chamber. And after cleaning, the deposition process is continued.
However, after cleaning a deposition apparatus having a plurality of deposition chambers, a deposition process is performed, and the deposition process is performed by setting the same deposition process parameters and conditions for each deposition chamber, and the thicknesses of the layers formed in the different chambers are not consistent, that is, after cleaning, the deposition process is performed simultaneously on different substrates by using the deposition apparatus, and the thicknesses of the dielectric layers formed in the different chambers are different, that is, the thicknesses (thicknesses) of the dielectric layers on the different substrates are different, which causes the electrical characteristics of devices formed on the different substrates to be different.
Although the dielectric layers are deposited on different substrates in a single deposition chamber continuously, the thickness uniformity of the dielectric layers deposited on different substrates can be improved, but the yield is reduced, and the requirement of mass production cannot be met.
Disclosure of Invention
The invention provides a method for improving the consistency of the thickness of a medium layer on different substrates, which aims to solve the problem that the thickness of film layers formed in different chambers of the existing deposition equipment is different.
The invention provides a method for improving the thickness consistency of dielectric layers deposited on different substrates, which is applied to deposition equipment with at least two deposition chambers and comprises the following steps:
different substrates are conveyed to different deposition chambers, deposition processes are carried out on the substrates in the different deposition chambers, and dielectric layers are formed on the different substrates;
wherein,
performing a cleaning process on each deposition chamber before transferring the substrate thereto;
the time difference between the time when the cleaning process is finished and the time when the deposition process is started is the same.
Optionally, the time difference between the time when the cleaning process is finished and the time when the deposition process is started is the same for each deposition chamber, and the method includes the following steps:
the time for starting the cleaning process performed in each deposition chamber after the deposition chamber transferring the substrate to the first deposition chamber is sequentially delayed, and the time for delaying each deposition chamber is the time for transferring the substrate to the previous deposition chamber.
Optionally, the time for transferring the substrate includes a sum of a time for a robot arm of the deposition apparatus to extract the substrate, a time for transferring the substrate to the chamber, and a time for resetting the chamber after transferring the substrate.
Optionally, the time difference between the time when the cleaning process is finished and the time when the deposition process is started is the same for each deposition chamber, and the method includes the following steps:
simultaneously starting to execute the same cleaning process on all the deposition chambers;
after the cleaning process is performed, the deposition process is simultaneously performed after transferring the substrate to all the deposition chambers.
Optionally, the cleaning process is plasma cleaning.
Optionally, the gas for generating the plasma in the plasma cleaning is a gas containing fluorine.
Optionally, the fluorine-containing gas comprises SiF4、NF3、C2F6Or F2。
Optionally, the deposition process includes plasma enhanced chemical vapor deposition or high density plasma chemical vapor deposition.
Optionally, the dielectric layer is fluorosilicone glass, black diamond or CORAL.
The invention also provides a method for adjusting the thickness of a dielectric layer deposited on a substrate, which comprises the following steps:
performing a cleaning process on the deposition chamber;
conveying a substrate into a cleaned deposition chamber, performing a deposition process in the deposition chamber, and forming a dielectric layer on the substrate; wherein,
and selecting the time delay from the time of finishing the cleaning process to the time of starting the deposition process according to the relation between the time difference between the time of finishing the cleaning process and the time of starting the deposition process in the chamber and the thickness of the dielectric layer deposited in the chamber, and starting the deposition process to form the dielectric layer with the thickness meeting the requirement.
Compared with the prior art, one of the technical schemes has the following advantages:
the cleaning process time of different deposition chambers in the deposition equipment is delayed to a certain extent, so that the time difference from the cleaning completion time to the beginning of the deposition process in different deposition chambers is the same, the difference of the thicknesses of the dielectric layers deposited on the substrates caused by the time difference can be reduced or avoided, and the consistency of the thicknesses of the dielectric layers deposited on different substrates is improved.
Drawings
Fig. 1 is a schematic view of a deposition apparatus having 6 deposition chambers.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, but rather construed as limited to the embodiments set forth herein.
Next, the present invention is described in detail by using schematic diagrams, and in the detailed description of the embodiments of the present invention, the cross-sectional views illustrating the device structure are not enlarged partially according to the general scale for convenience of illustration, and the schematic diagrams are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
In the fabrication process of semiconductor integrated circuits, it is often necessary to deposit a dielectric layer, such as a post-deposition intermetal dielectric layer, on a substrate or semiconductor structure. Commonly used deposition methods are chemical vapor deposition, such as plasma-assisted chemical vapor deposition, high confinement plasma chemical vapor deposition, and the like. However, when the dielectric layer is deposited by the method, the material of the dielectric layer is deposited on the inner wall of the deposition chamber of the deposition equipment at the same time, so that pollutants are formed; with the use of the deposition chamber, the thickness of the medium layer deposited on the inner wall of the deposition chamber is increased, and the medium layer attached to the inner wall falls off on the surface of the substrate to form defects; on the other hand, as the thickness of the dielectric layer on the inner wall of the deposition chamber becomes thicker, the internal volume of the deposition chamber changes, so that parameters for performing a deposition process in the deposition chamber are difficult to control, for example, the pressure in the chamber is controlled, and thus the characteristics of a film layer of the formed dielectric layer change, which may affect the performance of the formed device.
Based on this, the deposition chamber of the deposition apparatus needs to be periodically cleaned to remove the dielectric material attached to the inner wall of the deposition chamber.
In addition, when the deposition apparatus is periodically maintained or stopped due to an accident, cleaning is also required before performing the deposition process after starting.
However, the applicants of the present invention have found that the time delay (or time difference) between the completion of cleaning and the start of the deposition process in the deposition chamber of the deposition apparatus affects the thickness of the deposited film layer, and that different time delays result in different thicknesses of the deposited film layer. Specifically, under the condition of adopting the same deposition process parameters, the delay time and the thickness of the deposited dielectric layer have a linear relation, and the longer the delay time is, the thinner the formed thickness is. Based on the method, the invention provides a method for improving the thickness consistency of medium layers deposited on different substrates, and the method can be applied to a deposition device with at least two deposition chambers.
The method for improving the thickness consistency of the medium layers deposited on different substrates comprises the following steps: and sequentially conveying different substrates to different deposition chambers, and performing deposition processes on the different substrates in the different deposition chambers to form dielectric layers on the different substrates. Wherein, before transferring the substrate to each deposition chamber, a cleaning process is performed on each deposition chamber; and the time difference from the end of the cleaning process performed by each deposition chamber to the beginning of the deposition process performed by the chamber is the same as the corresponding time difference of the other chambers.
It should be noted that the thickness of the dielectric layer deposited on the substrate refers to an average (Mean Value) of the thicknesses of the dielectric layers on the substrate, which can be obtained by sampling different positions on the substrate for thickness measurement and averaging the measured values obtained by measurement, and will not be described in detail herein.
Secondly, the step of performing the cleaning process on the deposition chambers before transferring the substrate to each deposition chamber comprises periodic cleaning of the deposition chambers, periodic maintenance cleaning of the deposition equipment and starting cleaning of the deposition equipment due to unexpected shutdown; in addition, the cleaning process may be performed after the dielectric layer is deposited for each substrate. That is, the cleaning process includes cleaning performed on the deposition chamber of the deposition apparatus under any condition.
According to one aspect of the present invention, the difference between the time when each deposition chamber performs the cleaning process and the time when the chamber performs the deposition process and the corresponding time difference of the other chambers are the same is achieved by the following steps:
the time for starting the cleaning process performed in each deposition chamber after the deposition chamber transferring the substrate to the first deposition chamber is sequentially delayed, and the time for delaying each deposition chamber is the time for transferring the substrate to the previous deposition chamber. That is, for a deposition apparatus having a plurality of deposition chambers, before performing a deposition process, cleaning processes are sequentially performed according to an order of transferring substrates to the deposition chambers, and the deposition chambers transferring substrates later have a time delay from the time when the cleaning process is performed by the chambers transferring substrates earlier, so that the time difference from the completion of the cleaning process performed by all the deposition chambers to the start of the deposition process is the same, thereby allowing dielectric layers deposited in different deposition chambers to have the same or substantially the same thickness.
Wherein the delayed time is a time for transferring the substrate to a previous deposition chamber for each chamber except for the first chamber for transferring the substrate, and the time for transferring the substrate includes a sum of a time for a robot arm of the deposition apparatus to extract the substrate, a time for transferring the substrate to the chamber, and a time for withdrawing the substrate from the chamber after transferring the substrate.
Specifically, for example, the second substrate transferring chamber may perform a cleaning process with a time delay from the first substrate transferring chamber to the robot of the deposition chamber, and the time delay may include a sum of a time when the robot extracts the substrate from the buffer chamber of the deposition apparatus, a time when the robot transfers the extracted substrate to the first substrate transferring chamber, and a time when the robot resets the first substrate transferring chamber after transferring the substrate.
In addition, according to another aspect of the present invention, the difference between the time when each deposition chamber performs the cleaning process and the time when the chamber performs the deposition process and the corresponding time difference of the other deposition chambers are the same is achieved by: simultaneously starting to execute the same cleaning process on all the deposition chambers; after the cleaning process is performed, the deposition process is simultaneously performed after transferring the substrate to all the deposition chambers. That is, for a deposition apparatus having a plurality of deposition chambers, different deposition chambers may be configured to simultaneously start performing the same cleaning process, different substrates may be sequentially transferred into the different deposition chambers after the cleaning process is completed, and the deposition process may be simultaneously started after all the deposition chambers transfer the substrates. That is, the deposition chamber that is first transferred with the substrate needs to wait for the subsequent chamber that is not transferred with the substrate to transfer the substrate, and then starts to perform the deposition process, so that the time delay from the cleaning to the deposition of different deposition chambers is the same, thereby ensuring that the thicknesses of the dielectric layers formed on the substrates of different deposition chambers are the same or substantially the same.
Wherein, the cleaning process in the above description can be plasma cleaning,the cleaning method comprises the steps of introducing cleaning gas into a deposition chamber, exciting the gas through an excitation source, ionizing the gas to form plasma, etching pollutants attached to the inner wall of the deposition chamber by the plasma, and pumping etched byproducts out of the deposition chamber through an exhaust device, so that the inner wall of the deposition chamber is cleaned. Wherein, for the pollutants containing silicon, such as the attachments on the inner wall of the deposition chamber during the deposition of the dielectric layer of silicon oxide, silicon nitride, fluorosilicone glass, black diamond, etc., fluorine-containing gas can be used as etching gas, specifically, the fluorine-containing gas can be the fluorine-containing gas including SiF4、NF3、C2F6Or F2. Other process conditions such as chamber pressure, temperature and gas flow during cleaning are determined according to the type and thickness of the deposit on the inner wall of the deposition chamber, and will not be described herein.
The method for improving the consistency of the thickness of the dielectric layers deposited on different substrates according to the present invention will be described in detail below by taking a process of depositing an intermetal dielectric layer on a substrate as an example. It should be noted that the described embodiments and steps thereof should not unduly limit the scope of the claims, and that those skilled in the art will recognize many other variations, substitutions, or modifications without departing from the scope of the claims.
Referring to FIG. 1, a deposition apparatus 10 includes a transfer chamber 12 having a four robot transfer device 14 in the transfer chamber 12; a buffer chamber 11 outside one of the sidewalls of the transfer chamber 12 for receiving a substrate to be processed or for removing a completely processed substrate therefrom out of the deposition apparatus; outside the other three side walls of the transfer chamber 12 are a pair of deposition chambers, 16a and 16b, 18a and 18b, and 20a and 20b, respectively. The substrate to be processed is transferred from the buffer chamber to different deposition process chambers through the transfer device 12, and the deposition process is performed in the deposition process chambers to deposit an intermetal dielectric layer on the substrate, which may be black diamond in this embodiment. It should be noted that fig. 1 is introduced only for illustrating the method of the present invention, and various components thereof may have other modifications, and may also include other components, which are not described in detail herein.
For the deposition apparatus described in fig. 1, the transfer sequence to the different deposition chambers may be set such that the substrates are transferred to the deposition chambers 16a and 16b, then to the deposition chambers 18a and 18b, and then to the deposition chambers 20a and 20 b.
In operation of the deposition apparatus 10 shown in fig. 1, a substrate to be processed is first transferred to the buffer chamber 11, wherein the substrate is already manufactured with a front-end semiconductor device and a rear-end intermetal dielectric layer is to be deposited, specifically, the intermetal dielectric layer in the present invention is black diamond.
Next, a cleaning process is performed on the deposition chambers 16a and 16b to clean the inner walls of the deposition chambers 16a and 16b, wherein NF may be used in this step3Is cleaned and will not be described in detail here.
Then, two substrates to be deposited with a medium layer are extracted from the buffer chamber by two of the four robot arms of the transfer device 14, and then the transfer device 14 is rotated to align the two robot arms carrying the substrates with the deposition chambers 16a and 16b, and after the robot arms transfer the carried substrates to the deposition chambers 16a and 16b, the robot arms are returned to the transfer chamber 12 by the deposition chambers 16a and 16 b. After the deposition chambers 16a and 16b receive the substrates, the deposition process is started.
The deposition chambers 18a and 18b begin performing the same cleaning process as the deposition chambers 16a and 16b at a delay time T1 after the deposition chambers 16a and 16b begin performing the cleaning process, wherein the delay time T1 includes the sum of the time the robot arm draws the substrate from the buffer chamber 11, the time the robot arm transfers the carried substrate to the deposition chambers 16a and 16b, and the time the robot arm resets from the deposition chambers 16a and 16b to the transfer chamber 12. In addition, the cleaning process in this step may be different from the cleaning process of the deposition chambers 16a and 16 b.
The substrates are then transferred by the robot arm to the deposition chambers 18a and 18b and the deposition process is performed, which will not be described in detail herein.
In one particular process, the delay time T1 is 75 s.
Next, after the cleaning process is performed in the deposition chambers 18a and 18b, the cleaning process is performed in the deposition chambers 20a and 20b after a delay time T2, that is, after the cleaning process is performed in the deposition chambers 16a and 16b after T1 plus T2, the cleaning process is performed in the deposition chambers 20a and 20b, and after the cleaning process is performed, the substrates are transferred to the deposition chambers 20a and 20b by the robot arm, and the deposition process is performed on the substrates, wherein T1 and T2 are the same. In one particular process, the delay time T2 is 75 s.
In addition, the cleaning processes performed in the different deposition chambers may be the same (where the same is only the same parameters of the cleaning process in the deposition chamber, and does not mean that the parameters of the cleaning process actually performed in the deposition chamber are the same), or may be different; the process parameters of the deposition processes performed in the different deposition chambers are the same. After the deposition process is completed, the mechanical arm sequentially takes out the substrates of the deposited medium layer according to the sequence of conveying the substrates, and the substrates are conveyed out of the deposition equipment from the buffer chamber 11.
According to the sequence of conveying the substrates, the time difference from the cleaning completion time to the beginning of the deposition process in different deposition chambers is the same by setting the time delay of the cleaning process of different deposition chambers in the deposition equipment, so that the difference of the thicknesses of the dielectric layers deposited on the substrates caused by the time difference can be reduced or avoided, and the consistency of the thicknesses of the dielectric layers deposited on different substrates is improved.
In the above embodiments, the method for improving the uniformity of the thickness of the dielectric layer deposited on the substrate according to the present invention is described in detail by way of examples, and it should be noted that, the description of the steps above should not be taken as limiting the scope of the invention as claimed, the addition, removal, equivalent replacement, or sequential changes of the steps of the above-described embodiments may be made by those skilled in the art according to the teachings of the embodiments of the present invention without departing from the scope of the claims, as long as the processes for improving the consistency of the thickness of the dielectric layers deposited on different substrates by making the time difference of different deposition chambers the same in the deposition process having at least two deposition chambers by changing and adjusting the time difference from the completion of the cleaning process of the deposition chambers to the beginning of the deposition process are included in the scope of the present invention.
In addition, the invention also provides a method for adjusting the thickness of the dielectric layer deposited on the substrate, which comprises the following steps: performing a cleaning process on the deposition chamber; conveying a substrate into a cleaned deposition chamber, performing a deposition process in the deposition chamber, and forming a dielectric layer on the substrate; and selecting the time delay from the time of finishing the cleaning process to the time of starting the deposition process according to the relation between the time difference between the time of finishing the cleaning process and the time of starting the deposition process in the chamber and the thickness of the dielectric layer deposited in the chamber, and starting the deposition process to form the dielectric layer with the thickness meeting the requirement. And will not be described in detail herein.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto, and variations and modifications may be made by those skilled in the art without departing from the spirit and scope of the present invention.
Claims (10)
1. A method for improving the thickness consistency of dielectric layers deposited on different substrates is applied to a deposition device with at least two deposition chambers, and is characterized by comprising the following steps:
different substrates are conveyed to different deposition chambers, deposition processes are carried out on the substrates in the different deposition chambers, and dielectric layers are formed on the different substrates;
wherein,
performing a cleaning process on each deposition chamber before transferring the substrate thereto;
the time difference between the time when the cleaning process is finished and the time when the deposition process is started is the same.
2. The method of claim 1, wherein the time difference between the end of the cleaning process performed on each deposition chamber and the beginning of the deposition process performed on the chamber is the same by:
the time for starting the cleaning process performed in each deposition chamber after the deposition chamber transferring the substrate to the first deposition chamber is sequentially delayed, and the time for delaying each deposition chamber is the time for transferring the substrate to the previous deposition chamber.
3. The method of claim 2, wherein the step of increasing the uniformity of the thickness of the dielectric layers deposited on the different substrates comprises: the time to transfer the substrate includes a sum of a time when a robot arm of the deposition apparatus extracts the substrate, a time when the substrate is transferred to the chamber, and a time when the substrate is reset by the chamber after being transferred.
4. The method of claim 1, wherein the time difference between the end of the cleaning process performed on each deposition chamber and the beginning of the deposition process performed on the chamber is the same by:
simultaneously starting to execute the same cleaning process on all the deposition chambers;
after the cleaning process is performed, the deposition process is simultaneously performed after transferring the substrate to all the deposition chambers.
5. The method according to any of claims 1 to 4, wherein the step of increasing the uniformity of the thickness of the dielectric layers deposited on the different substrates comprises: the cleaning process is plasma cleaning.
6. The method of claim 5, wherein the step of depositing the dielectric layer on the different substrates comprises: the gas for generating plasma in the plasma cleaning is a gas containing fluorine.
7. The method of claim 6, wherein the step of depositing the dielectric layer on the different substrates comprises: the fluorine-containing gas comprises SiF4、NF3、C2F6Or F2。
8. The method of claim 1, 2, 3, 4, or 6, wherein the step of depositing the dielectric layer on the different substrates comprises: the deposition process comprises plasma enhanced chemical vapor deposition or high density plasma chemical vapor deposition.
9. The method of claim 1, 2, 3, 4, or 6, wherein the step of depositing the dielectric layer on the different substrates comprises: the dielectric layer is made of fluorinated silica glass, black diamond or CORAL.
10. A method of adjusting a thickness of a dielectric layer deposited on a substrate, comprising:
performing a cleaning process on the deposition chamber;
conveying a substrate into a cleaned deposition chamber, performing a deposition process in the deposition chamber, and forming a dielectric layer on the substrate; wherein,
selecting the time delay from the time of finishing the cleaning process to the time of starting the deposition process according to the relation between the time difference between the time of finishing the cleaning process and the time of starting the deposition process in the chamber and the thickness of the dielectric layer deposited in the chamber, and starting the deposition process to form the dielectric layer with the thickness meeting the requirement;
the relationship between the time difference and the thickness of the deposited dielectric layer is linear.
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| EP1037263A2 (en) * | 1999-03-05 | 2000-09-20 | Applied Materials, Inc. | Apparatus for electro-chemical deposition of copper with the capability of in-situ thermal annealing |
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