CN101587925A - Packaging structure of light-emitting element and manufacturing method thereof - Google Patents
Packaging structure of light-emitting element and manufacturing method thereof Download PDFInfo
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- CN101587925A CN101587925A CN 200810098308 CN200810098308A CN101587925A CN 101587925 A CN101587925 A CN 101587925A CN 200810098308 CN200810098308 CN 200810098308 CN 200810098308 A CN200810098308 A CN 200810098308A CN 101587925 A CN101587925 A CN 101587925A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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Abstract
The invention provides a packaging structure of a light-emitting element and a manufacturing method thereof, in particular to a packaging structure of a light-emitting element, which comprises the following steps: a light emitting device chip; a first electrode layer disposed on the first surface of the light-emitting device wafer; a second electrode layer disposed on the second surface of the light-emitting device wafer; a cover plate for covering the light-emitting surface of the light-emitting element wafer; an insulating layer for coating the side and back of the light-emitting element wafer; a first conductive layer electrically connected to the first electrode layer and extending to the back surface of the light-emitting device chip along the insulating layer; and a second wiring layer electrically connected to the second electrode layer, wherein the second wiring layer is located on the insulating layer and extends to the back surface of the light-emitting element wafer along the insulating layer. The packaging structure of the light-emitting element and the manufacturing method thereof can improve the heat dissipation efficiency of the packaging structure of the light-emitting element and the reliability of the light-emitting element.
Description
Technical field
The present invention is particularly to the encapsulating structure and the manufacture method thereof of the light-emitting component of a kind of small size, low thermal resistance relevant for a kind of encapsulating structure and manufacture method thereof of light-emitting component.
Background technology
Light-emitting diode (light emitted diode is hereinafter to be referred as LED) is played the part of important role in illumination or display application.LED compares with conventional light source and has many advantages, and for example volume is little, luminescent effect is good, operant response speed is fast.Early stage LED has been widely used in mobile phone, midget plant such as remote controller etc., and because of high brightness, high-capacity LED occur, range of application is extended to products such as automobile, illumination, outdoor large display in recent years.Because brightness, the power of LED all actively promote, and after beginning to be used for application such as backlight and electrical lighting, the package cooling problem of LED is on the rise.The radiating efficiency of known LED wire bonding and packaging structure is not good, and the heat that can allow LED produce can't be mediated, and then the working temperature of LED is risen, thereby makes that luminosity weakens, the package material deterioration, and then causes the decay in useful life.
Fig. 1 is known LED encapsulating structure 100, wherein LED wafer 31 makes LED wafer 31 be electrically connected to lead frame 34 via gold thread 32 via welding or utilizing heat-conducting cream to be connected with silicon mosaic wafer (silicon sub-mount chip) 30 via routing (wire bonding) mode.Silicon mosaic wafer 30 can down connect radiating block (heat-sinkingslug) 37 again.Silicone sealant 36 is in order to fixed L ED wafer 31, and lens 35 are arranged on the silicone sealant 36.And plastic cement outer cover 38 (plastic case) combines with lead frame 34, radiating block 37 and silicone sealant 36, and to finish encapsulation, speed of production can't promote.When light-emitting component constitutes pel array with as illumination or demonstration purposes the time, known LED encapsulating structure can be because the area of lead frame or outer cover (housing) be huge, the spacing of each light-emitting component can't be dwindled, thereby the poor continuity of pixel, the picture visual effect is not good.
Wafer level packaging structure and manufacture method thereof that the light-emitting component that needs a kind of small size, low thermal resistance is arranged in this technical field.
Summary of the invention
The invention provides a kind of encapsulating structure of light-emitting component, comprising: a light-emitting component wafer; One first electrode layer is arranged on the first surface of above-mentioned light-emitting component wafer; One the second electrode lay is arranged on the second surface of above-mentioned light-emitting component wafer; One cover plate covers the light-emitting area of above-mentioned light-emitting component wafer; One insulating barrier coats the side and the back side of above-mentioned light-emitting component wafer; One conductor layer No.1 electrically connects above-mentioned first electrode layer, and extends to the back side of above-mentioned light-emitting component wafer along above-mentioned insulating barrier; And one second conductor layer, electrically connecting above-mentioned the second electrode lay, wherein above-mentioned second conductor layer is positioned on the above-mentioned insulating barrier, and extends to the back side of above-mentioned light-emitting component wafer along above-mentioned insulating barrier.
The present invention provides a kind of manufacture method of encapsulating structure of light-emitting component in addition, comprises the following steps: to provide a wafer, and it comprises a plurality of light-emitting component wafers; One first electrode layer is arranged on the surface of above-mentioned light-emitting component wafer; One the second electrode lay is arranged on another surface of above-mentioned light-emitting component wafer; On the light-emitting area of the above-mentioned light-emitting component wafer of above-mentioned wafer, cover a cover plate; At least a part that removes above-mentioned wafer rear to be forming a groove, and exposes the contact-making surface of above-mentioned first electrode layer and above-mentioned the second electrode lay; And at least two conductor layers of compliance formation, its sidewall from above-mentioned groove extends to the back side of above-mentioned wafer, and is electrically connected to the contact-making surface of above-mentioned first electrode layer and above-mentioned the second electrode lay respectively.
The encapsulating structure of light-emitting component of the present invention and manufacture method thereof can promote the radiating efficiency of encapsulating structure of light-emitting component and the reliability of light-emitting component.
Description of drawings
Fig. 1 is known LED encapsulating structure.
Fig. 2 a to Fig. 2 c is the processing procedure profile of wafer-level packaging of the light-emitting component of one embodiment of the invention.
Fig. 3 a to Fig. 3 c is the processing procedure profile of wafer-level packaging of the light-emitting component of another embodiment of the present invention.
Fig. 4 a to Fig. 4 b is the profile of the encapsulating structure with different light-emitting components wafer geometry of other embodiments of the invention.
Fig. 5 a to Fig. 5 b is the profile of encapsulating structure of the light-emitting component with heat radiation weld pad of other embodiments of the invention.
Fig. 6 a to Fig. 6 b is the profile of encapsulating structure of the light-emitting component with heat radiation interlayer hole connector of other embodiments of the invention.
Fig. 7 a to Fig. 7 d is the profile of encapsulating structure of the light-emitting component of the embedded radiative material bed of material of having of other embodiments of the invention.
Fig. 8 a to Fig. 8 d is the profile of encapsulating structure of the light-emitting component with fluorescence coating of other embodiments of the invention.
Fig. 9 is the profile of the encapsulating structure of the light-emitting component with microlens array of other embodiments of the invention.
Figure 10 a to Figure 10 d is the profile of encapsulating structure of the light-emitting component with lens arrangement of other embodiments of the invention.
Figure 11 a to Figure 11 b is the profile of encapsulating structure of the light-emitting component with reflecting element of other embodiments of the invention.
Embodiment
Below describe and be accompanied by the example of graphic explanation in detail with each embodiment, as reference frame of the present invention.In graphic or specification were described, similar or identical part was all used identical figure number.And in graphic, the shape of embodiment or thickness can enlarge, and to simplify or convenient the sign.Moreover, graphic in the part of each element will it should be noted that to describe explanation respectively, the element that does not illustrate among the figure or describe is the form known to those of ordinary skills, in addition, only for disclosing the ad hoc fashion that the present invention uses, it is not in order to limit the present invention to certain embodiments.
Fig. 2 a to Fig. 2 c is the processing procedure profile of wafer-level packaging of the light-emitting component of one embodiment of the invention.The embodiment of the invention is utilized wafer-level packaging (wafer level chipscale package, WLC SP) processing procedure, for example encapsulate light-emitting diode (light emitteddiode, LED) or laser diode (laser diode LD) waits light-emitting component.Wherein the wafer-level packaging processing procedure mainly is meant after wafer stage is finished encapsulation step, cut into independently packaging body again, yet, in a specific embodiment, the light-emitting component redistribution that for example will separate is on a carrying wafer, carry out encapsulation procedure again, also can be referred to as the wafer-level packaging processing procedure.
Please refer to Fig. 2 a, a wafer 200 is provided, it has a plurality of light-emitting component wafers 300, and each light-emitting component wafer 300 is each other with Cutting Road A
1And A
2Separate.The material of wafer 200 can comprise transparent semiconductor or dielectric material.Wherein the transparent semiconductor material can comprise group iii nitride semiconductor (group III nitridesemiconductors) (for example GaN), three races's phosphide semiconductor (group IIIphosphide semiconductors) (for example GaP), three races's arsenide semiconductor (group III arsenide semiconductors) (for example AlGaAs), three-five family's semiconductors (for example ZnS, ZnSe, CdSe or CdTe), carborundum, germanium, silicon or its alloy.And dielectric material can comprise diamond (dimond), yttrium-aluminium-garnet (yttriumaluminium garnet, YAG), metal oxide (metal oxide), metal fluoride (metal fluoride), optical glass (optical glass), chalcogenide glass (chalcogenide glass).For instance, metal oxide (metal oxide) can comprise aluminium oxide (aluminum oxide (sapphire, sapphire)), tungsten oxide (tungstenoxide), tellurium oxide (tellurium oxide), titanium oxide (titanium oxide), nickel oxide (nickel oxide), zirconia (zirconium oxide, cubic zirconium, cubiczirconia), indium oxide (indium oxide), tin oxide (tin oxide), palladium oxide (barium oxide), strontium oxide strontia (strontium oxide), calcium oxide (calciumoxide), zinc oxide (zinc oxide), gallium oxide (gallium oxide), antimony oxide (antimony oxide), molybdenum oxide (molybdenum oxide), chromium oxide (chromiumoxide), lead oxide (lead oxide) or bismuth oxide (bismuth oxide) etc.For instance, metal fluoride can comprise calcirm-fluoride (calcium fluoride) or magnesium fluoride (magnesium fluoride) etc.For instance, optical glass can comprise that the model of German first moral glass (Schott Glass) is the optical glass of SF57, SF59, SFL56, LaSF, LaSFN9, LaSFN18 or LaSFN30, and the model of Japanese little bare glass (Oharaglass) is the optical glass of PBH71.And chalcogenide glass can comprise germanium-bismuth-gallium-sulphur-selenium glass ((Ge, Sb, Ga) (S, Se) glass).In embodiments of the present invention, the material of wafer 200 can comprise aluminium oxide (Al
2O
3), GaAs (GaAs), silicon (Si) or carborundum (SiC) etc.Each light-emitting component wafer 300 can comprise semi-conductor layer 202, one first electrode layer 206 and a second electrode lay 204.Semiconductor layer 202 is formed on the wafer 200.Semiconductor layer 202 can be one and has the semiconductor layer that p type-n type meets face (pn junction), and it comprises the p type zone and the n type zone of at least two electric connections.One first electrode layer 206 is arranged on the semiconductor layer 202, and is electrically connected to a surface of semiconductor layer 202.For instance, first electrode layer 206 can be electrically connected to the p type zone of semiconductor layer 202.One the second electrode lay 204 is arranged on the back side 201 of wafer 200, and borrows wafer 200 to be electrically connected to another surface of semiconductor layer 202.For instance, the second electrode lay 204 can be electrically connected to the n type zone of semiconductor layer 202.In one embodiment, above-mentioned first electrode layer 206 and the second electrode lay 204 are electrically connected to the different conduction-types zone of semiconductor layer 202 respectively, therefore can be respectively as the p type electrode and the n type electrode of light-emitting component wafer 300.In other embodiments, a reflector (reflector) (figure does not show) also can be set to increase its luminous efficiency in semiconductor layer 202.In addition, optical diode electronic components such as (photodiode) (figure does not show) also can be set in light-emitting component wafer 300, and be electrically connected to semiconductor layer 202, with the luminosity of control semiconductor layer 202.In embodiments of the present invention, the semiconductor layer 202 that is used for light-emitting diode (LED) or laser diode (LD), its material can comprise compound or other materials similar of group iii nitride semiconductor (group III nitride semiconductors), three races's phosphide semiconductor (group III phosphide semiconductors), three races's arsenide semiconductor (group III arsenide semiconductors), three-group-v element and phosphorus.For instance, semiconductor layer 202 can comprise gallium nitride (GaN), aluminium nitride (AlN), indium nitride (InN), boron nitride (BN), aluminum indium nitride (AlInN), InGaN (GaInN), aluminium gallium nitride alloy (AlGaN), boron nitride aluminium (BAlN), boron nitride indium (BInN), boron nitride gallium (BGaN), boron nitride gallium aluminium indium (BAlGaInN), aluminum phosphate (AlP), gallium phosphide (GaP), indium phosphide (InP), aluminum gallium phosphide (AlGaP), InGaP (GaInP), arsenic phosphide gallium (GaAsP), AlGaInP (InGaAlP), nitrogen phosphatization (GaInPN), phosphorus InGaAsP (GaInAsP), aluminium arsenide (AlAs), GaAs (GaAs), indium arsenide (InAs), aluminum gallium arsenide (GaAlAs), Gallium indium arsenide (GaInAs), aluminium arsenide gallium indium (AlGaInAs), nitrogen InGaAsP (GaInAsN), arsenic gallium antimonide (GaAsSb) etc.
Then, formation one is covered with the hole 213 of cover plate 212 on light-emitting component wafer 300, and the light-emitting area of covering luminous element wafer 300 (for example being the upper surface of semiconductor layer 202) for example can be prior to reaching Cutting Road A around the light-emitting component wafer 300
1And A
2Last formation one adhesion coating 208a forms a supporting layer (dam) 210 again on adhesion coating.Then, a bonding light-emitting component wafer 300 and a cover plate 212, wherein supporting layer 210 is between first electrode layer 206 and cover plate 212, to form a hole 213 between light-emitting component wafer 300 and cover plate 212.In embodiments of the present invention, adhesion coating 208a can comprise for example epoxy resin (epoxy), silicones (silicone) or benzocyclobutene (benzocyclobutene, BCB) insulating material such as grade.Supporting layer 210 can comprise that (benzocyclobutene BCB) waits insulating material for epoxy resin (epoxy), silicones (silicone) or benzocyclobutene.Cover plate 212 can make light that semiconductor layer 202 produces by and outgoing to extraneous, its material can comprise transparent materials (transparent material) such as eyeglass level glass or quartz, so can avoid the conventional package glue in the known luminescence element to understand because of making for a long time the shortcoming of material deterioration.
Then, please refer to Fig. 2 b, progressively along Cutting Road A
1And A
2Separate each light-emitting component wafer 300 and insulated.For example can utilize selective removal steps such as little shadow and etch process, remove part wafer 200, till exposing semiconductor layer 202, with in Cutting Road A from the back side 201 of wafer 200
1And A
2The place forms groove (figure does not show) earlier.Then, compliance ground forms an insulating barrier 214 in the back side 201 of wafer 200 and the side 203 of above-mentioned groove.For example can utilize chemical vapour deposition technique (CVD), physical vaporous deposition (PVD), sputtering method, print process, ink-jet method, immersion plating, spraying process (spray coating) or method of spin coating form insulating barrier 214.In embodiments of the present invention, the material of insulating barrier 214 can comprise epoxy resin, pi, resin, silica, metal oxide or silicon nitride.
Then, expose a side 207 of first electrode layer 206 that is positioned at wafer top and expose the part lower surface of the second electrode lay 204 that is positioned at the wafer below.Selective removal steps such as for example recycling for example little shadow and etch process remove the partial insulative layer 214, part supporting layer 210, part adhesion coating 208a and the partial cover plate 212 that are positioned at above-mentioned channel bottom, with in Cutting Road A
1And A
2The place forms groove 220a, and the side 207 of exposing first electrode layer 206.Shown in Fig. 2 b, groove 220a extends to wafer 200, semiconductor layer 202, supporting layer 210, adhesion coating 208a and the partial cover plate 212 from the back side 201 of wafer 200.
Afterwards, selective removal steps such as recycling for example little shadow and etch process remove partial insulative layer 214 from the back side 201 of wafer 200, expose up to formation till the interlayer hole of the second electrode lay 204 lower surfaces.
Then, making can electrically connect the side 207 of first electrode layer 206 and the conductive structure of the second electrode lay 204 lower surfaces respectively.For example in interlayer hole, insert electric conducting material such as metal to electroplate modes such as (electric plating) or chemical vapor deposition (CVD), form an interlayer hole connector 222 with lower surface in first electrode layer 206 of each light-emitting component wafer 300, in embodiments of the present invention, interlayer hole connector 222 is as the external electrically connect of the second electrode lay 204.
Then, compliance forms a conductive layer (figure shows) in the back side 201 of wafer 200 and the inwall of groove 220a, and in another embodiment, above-mentioned interlayer connector 222 can form together with conductive layer.Secondly, carry out the step of patterned conductive layer, utilize selective removal steps such as for example little shadow and etch process, remove the conductive layer that part is positioned at the back side 201 of wafer 200, to form a plurality of leads 216 and a plurality of patterned conductive layer 218 simultaneously.Wherein lead 216 is in order to provide the I/O (input/output of semiconductor layer 202, IO) electric connection, wherein above-mentioned lead 216 comprise that the first lead 216a and the second lead 216b are with first electrode layer 206 that electrically connects the wafer top respectively and the second electrode lay 204 of wafer below.In another embodiment, when compliance forms conductive layer in the inwall of groove 220a, this conductive layer can coat entire wafer a side or even extend to adjacent another side, under not mutual situation of short circuit, almost completely to coat the side periphery of entire wafer, therefore when use during as the metal material of aluminium, except increasing the radiating effect, also can reflect light from wafer, help to improve luminous efficiency.
Wherein the position of interlayer hole connector 222 is a principle to avoid the first lead 216a, for instance, shown in Fig. 2 b, because first electrode layer 206 is formed at a side of light-emitting component wafer 300 tops, the first lead 216a then extends to the wafer below from same side, so interlayer hole connector 222 can be formed at the opposite side of light-emitting component wafer 300 belows.
Afterwards, form soldered ball in the lead 216 and patterned conductive layer 218 surfaces of wafer 200 belows.For example can form a welding resisting layer (solder mask layer) 224 in the back side 201 of wafer 200 and the inwall compliance of groove 220a, and cover part lead 216 and patterned conductive layer 218, the terminal contact area of reservation exposed.Then, on the terminal contact area that exposes, form the ball grid array (ballgrid array) that comprises soldered ball 226a, 226b and 226c, wherein conduction is formed on lead 216a, the 216b with soldered ball 226a and 226c, to be electrically connected to first electrode layer 206 and the second electrode lay 204 via lead 216a, 216b respectively, heat conduction then is formed on the patterned conductive layer 218 with soldered ball 226b, the area of patterned conductive layer 218 can be a bit larger tham the area of soldered ball 226b, and soldered ball 226a, 226b and 226c copline.
Then, please refer to Fig. 2 c, along Cutting Road A
1And A
2Cut above-mentioned wafer 200, make it be separated into the wafer level packaging structure 500a of a plurality of independently light-emitting components.
In following each embodiment, each element if any with same or analogous part shown in Fig. 2 a to Fig. 2 c, then can not do repeat specification at this with reference to the relevant narration of front.
Fig. 3 a to Fig. 3 c is the processing procedure profile of wafer-level packaging of the light-emitting component of another embodiment of the present invention.
Please refer to Fig. 3 a, fill an adhesion coating 208b between wafer 200 and cover plate 212, wherein adhesion coating 208b can be attached to earlier on semiconductor layer 202 or the cover plate 212, gives overlapping curing again.
Then, please refer to Fig. 3 b, form conduction and use soldered ball 226a and 226c on lead 216a, 216b, and heat conduction uses soldered ball 226b on patterned conductive layer 218.Then, please refer to Fig. 3 c, along Cutting Road A
1And A
2Cut above-mentioned wafer 200, make it be separated into the wafer level packaging structure 500b of a plurality of independently light-emitting components.
The light-emitting component wafer 300 for encapsulating structure 500b of not existing together of the encapsulating structure 500a of light-emitting component and 500b fits tightly via adhesion coating 208b with cover plate 212 does not have the hole.In addition, the soldered ball 226b of encapsulating structure 500a and 500b and soldered ball 226a, 226c are the ball grid array (ball grid array) that forms simultaneously, but soldered ball 226b is not electrically connected to lead 216.In embodiments of the present invention, soldered ball 226b can be considered heat radiation soldered ball 226b, and its number is also unrestricted, can decide according to processing procedure.When the encapsulating structure 500a of light-emitting component or 500b operation, the heat that semiconductor layer 202 is produced can be directed at outside the encapsulating structure 500a or 500b of light-emitting component via heat radiation soldered ball 226b.In the encapsulating structure of the light-emitting component of the embodiment of the invention, because the distance in semiconductor layer 202 and encapsulating structure 500a or the 500b outside is less than the routing type encapsulating structure of known luminescence element, add heat radiation soldered ball 226b and be located immediately at thin dielectric layer 214 belows at wafer 200 back sides 201, do not separate and be printed circuit board, therefore the thermal conductance that can rapidly semiconductor layer 202 be produced is to extraneous, the thermal resistance of encapsulating structure can greatly reduce, thereby is promoted encapsulating structure 500a and the radiating efficiency of 500b and the reliability of light-emitting component of light-emitting component.
In addition, in different embodiment, can be through the material that changes wafer 200 or light-emitting component wafer 300 geometries improving the luminous efficiency of light-emitting component wafer 300, and reduce and cover, increase light permeable rate, or the utilance of reinforcement anaclasis, reflection.
Fig. 4 a to Fig. 4 b is the encapsulating structure 400a with different light-emitting components wafer 300 geometries of other embodiments of the invention and the profile of 400b.Please refer to Fig. 4 a, because semiconductor layer 202 is generally formed by the multilayer epitaxial layer, and comprise p type epitaxial layer and n type epitaxial layer, therefore can be via removing part semiconductor layer 202 for example p type epitaxial layer and exposed portions serve n type epitaxial layer surface, so that first electrode layer 206 of encapsulating structure 400a and the second electrode lay 204a can be positioned at the same side (up) of wafer 200 simultaneously, and electrically connect p type zone and n type zone (figure is the demonstration) of semiconductor layer 202 respectively, and be electrically connected to soldered ball 226a and 226c respectively via the lead 216 of the side 203 of light-emitting component wafer 300.In the present embodiment, the material of wafer 200 can comprise or semi-conducting material or metal oxide (metal oxide), wherein semi-conducting material can comprise silicon (Si), and metal oxide (metal oxide) can comprise aluminium oxide (aluminum oxide (sapphire, sapphire)), tungsten oxide (tungsten oxide), tellurium oxide (tellurium oxide), titanium oxide (titanium oxide), nickel oxide (nickel oxide), zirconia (zirconiumoxide, cubic zirconium, cubic zirconia), indium oxide (indium oxide), tin oxide (tin oxide), palladium oxide (barium oxide), strontium oxide strontia (strontium oxide), calcium oxide (calcium oxide), zinc oxide (zinc oxide), gallium oxide (galliumoxide), antimony oxide (antimony oxide), molybdenum oxide (molybdenum oxide), chromium oxide (chromium oxide), lead oxide (lead oxide) or bismuth oxide (bismuthoxide) etc.Shown in Fig. 4 a, because first electrode layer 206 and the second electrode lay 204a of encapsulating structure 400a are not positioned at same plane, can make its planarization via filling adhesion coating 208c, be convenient to be connected and tight with cover plate 212.
Fig. 4 b shows to cover the encapsulating structure 400b that crystalline substance (flip-chip) mode forms.Shown in Fig. 4 b, the back side 201 of the wafer 200 of encapsulating structure 400b up, can utilize the back side 201 and cover plate 212 of an adhesion coating 208d and supporting layer 210 bonding wafers 200, wherein supporting layer 210 is between wafer 200 and cover plate 212, to form hole 213a between wafer 200 and cover plate 212.The same side (up) that first electrode layer 206 of encapsulating structure 400b and the second electrode lay 204a are positioned at wafer 200, and electrically connect the p type zone and the n type zone of semiconductor layer 202 respectively, and be electrically connected to soldered ball 226a and 226c respectively via the lead 216 of the side 203 of light-emitting component wafer 300.In the present embodiment, the material of wafer 200 can comprise or semi-conducting material or metal oxide (metal oxide), wherein semi-conducting material can comprise silicon (Si), and metal oxide (metal oxide) can comprise aluminium oxide (aluminum oxide (sapphire, sapphire)), tungsten oxide (tungstenoxide), tellurium oxide (tellurium oxide), titanium oxide (titanium oxide), nickel oxide (nickel oxide), zirconia (zirconium oxide, cubic zirconium, cubiczirconia), indium oxide (indium oxide), tin oxide (tin oxide), palladium oxide (barium oxide), strontium oxide strontia (strontium oxide), calcium oxide (calciumoxide), zinc oxide (zinc oxide), gallium oxide (gallium oxide), antimony oxide (antimony oxide), molybdenum oxide (molybdenum oxide), chromium oxide (chromiumoxide), lead oxide (lead oxide) or bismuth oxide (bismuth oxide) etc.In addition, shown in Fig. 4 b, because first electrode layer 206 and the second electrode lay 204b of encapsulating structure 400b are not positioned at same plane, can make its planarization via filling insulating barrier 215, make soldered ball 226a, the 226b of follow-up formation, 226c still can be in the same plane.
In other embodiments, also can make difform radiator structure in addition, to reach the purpose of heat radiation in wafer 300 belows.
Fig. 5 a to Fig. 5 b is the encapsulating structure 500c of the light-emitting component with heat radiation weld pad 230b of other embodiments of the invention and the profile of 500d.Fig. 6 a to Fig. 6 d is the profile of encapsulating structure 500e, 500f, 500g and 500h of the light-emitting component with heat radiation interlayer hole connector 232 of other embodiments of the invention.Fig. 7 a to Fig. 7 d is the profile of encapsulating structure 500i, 500j, 500k and 500l of the light-emitting component of the embedded radiative material bed of material 234 of having of other embodiments of the invention.Please refer to Fig. 5 a to Fig. 5 b, it shows that the geometry with the light-emitting component wafer 300 of Fig. 2 c and Fig. 3 c is encapsulating structure 500c and the 500d of embodiment, can be after the first lead 216a and second lead 216b formation, utilize the part first lead 216a of coating method in the back side 201 of wafer 200, form for example weld pad 230a of the electric conducting material of tin on the second lead 216b and the patterned conductive layer 218,230b and 230c, wherein weld pad 230a and 230c are electrically connected to the first lead 216a and the second lead 216b, and weld pad 230b is formed on the patterned conductive layer 218, and weld pad 230a, 230b and 230c copline.In embodiments of the present invention, weld pad 230b can be considered heat radiation weld pad 230b.The number of heat radiation weld pad 230b is also unrestricted, and the gross area of soldered ball 226b is big because its gross area can dispel the heat, so that bigger area of dissipation and better radiating efficiency to be provided.When the encapsulating structure 500c of light-emitting component and 500d operation, the heat that semiconductor layer 202 is produced can be directed at outside the encapsulating structure 500c and 500d of light-emitting component via heat radiation weld pad 230b.In the encapsulating structure of the light-emitting component of the embodiment of the invention, because the distance in semiconductor layer 202 and encapsulating structure 500c or the 500d outside is less than the routing type encapsulating structure of known luminescence element, add heat radiation soldered ball 226b and be located immediately at thin dielectric layer 214 belows at the back side 201 of wafer 200, do not separate and be printed circuit board, therefore the thermal conductance that can rapidly semiconductor layer 202 be produced is to extraneous, the thermal resistance of encapsulating structure can greatly reduce, thereby is promoted encapsulating structure 500c and the radiating efficiency of 500d and the reliability of light-emitting component of light-emitting component.For instance, heat radiation behavior according to the encapsulating structure 500d of the ICE PAK analysis software sunykatuib analysis light-emitting component of ANSYS company, and with High Power LED (luminous power is greater than 1W) as semiconductor layer 202, can know thermal resistance (thermal resistance) value by inference and be about 0.08K/W, its value is much smaller than the present thermal resistance value of the wire bonding and packaging structure 5K/W of known light-emitting component with lead frame.By above-mentioned simulation as can be known, the encapsulating structure of the light-emitting component of the embodiment of the invention has good heat dissipation characteristics.
Fig. 6 a to Fig. 6 b is the encapsulating structure 500e of the light-emitting component with heat radiation interlayer hole connector 232 of other embodiments of the invention and the profile of 500f.Please refer to Fig. 6 a to Fig. 6 b, it shows that the geometry with the light-emitting component wafer 300 of Fig. 4 a is encapsulating structure 500e and the 500f of embodiment, can be before lead 216 and patterned conductive layer 218 formation, in modes such as for example laser drill, remove partial insulative layer 214 and part wafer 200 from the back side 201 of wafer 200, in wafer 200, to form a plurality of interlayer holes (figure does not show).Afterwards, in interlayer hole, insert conducting metal for example to electroplate modes such as (electric plating) or chemical vapor deposition (CVD) again, in wafer 200a, to form interlayer hole connector 232.In embodiments of the present invention, interlayer hole connector 232 can be considered heat radiation interlayer hole connector 232, it is that the back side 201 from wafer 200 extends to this wafer 200, and be connected to soldered ball 226a, 226b, 226c or weld pad 230a, 230b, 230c, can provide another kind of from wafer 200 to the encapsulating structure 500e of light-emitting component and the heat dissipation path 500f outside, the heat that can more quickly semiconductor layer 202 be produced is via dispelling the heat interlayer hole connector 232 outside soldered ball 226a, 226b, 226c or weld pad 230a, 230b, 230c are directed at the encapsulating structure 500e and 500f of light-emitting component.In the encapsulating structure of the light-emitting component of the embodiment of the invention, because the distance in semiconductor layer 202 and encapsulating structure 500e or the 500f outside is less than the routing type encapsulating structure of known luminescence element, add heat radiation interlayer hole connector 232, soldered ball 226a, 226b, 226c or weld pad 230a, 230b, 230c is located immediately at thin dielectric layer 214 belows at the back side 201 of wafer 200, do not separate and be printed circuit board, therefore the thermal conductance that can rapidly semiconductor layer 202 be produced is to extraneous, the thermal resistance of encapsulating structure can greatly reduce, thereby is promoted encapsulating structure 500e and the radiating efficiency of 500f and the reliability of light-emitting component of light-emitting component.
Fig. 7 a to Fig. 7 d is the profile of encapsulating structure 500i, 500j, 500k and 500l of the light-emitting component of the embedded radiative material bed of material 234 of having of other embodiments of the invention.Please refer to Fig. 7 a to Fig. 7 d, it shows that the geometry with the light-emitting component wafer 300 of Fig. 2 c and Fig. 3 c is encapsulating structure 500i, 500j, 500k and the 500l of embodiment, can before forming insulating barrier 214, form a radiative material bed of material 234 in the below of the second electrode lay 204.Can utilize modes such as plating (electric plating) or physical vapour deposition (PVD) to form for example radiative material bed of material 234 of metal.The radiative material bed of material 234 is embedded among encapsulating structure 500i, 500j, 500k and the 500l of light-emitting component, and between the second electrode lay 204 and insulating barrier 214, heat dissipation path outside another kind of encapsulating structure 500i, 500j, 500k and the 500l from wafer 200a to light-emitting component can be provided, when encapsulating structure 500i, the 500j of light-emitting component, 500k and 500l operation, the heat that semiconductor layer 202 is produced can be directed at outside encapsulating structure 500i, 500j, 500k and the 500l of light-emitting component to heat radiation soldered ball 226b or heat radiation weld pad 230b via the radiative material bed of material 234.Because semiconductor layer 202 and encapsulating structure 500i, 500j, the distance in the 500k and the 500l outside is less than the routing type encapsulating structure of known luminescence element, add the radiative material bed of material 234, heat radiation soldered ball 226b or heat radiation weld pad 230b are located immediately at thin dielectric layer 214 belows at the back side 201 of wafer 200, do not separate and be printed circuit board, therefore the thermal conductance that can rapidly semiconductor layer 202 be produced is to extraneous, the thermal resistance of encapsulating structure can greatly reduce, thereby is promoted the encapsulating structure 500i of light-emitting component, 500j, the radiating efficiency of 500k and 500l and the reliability of light-emitting component.
Wherein when the radiative material bed of material 234 also was electric conducting material, conductive plunger 222 can stop at the radiative material bed of material 234 surfaces and needn't contact bottom electrode 204.
Fig. 8 a to Fig. 8 d is the profile of encapsulating structure 500m, 500n, 500o and 500p of the light-emitting component with fluorescence coating 236a and 236b of other embodiments of the invention, the encapsulating structure that it can be white or other colored light-emitting diodes makes above-mentioned light-emitting diode produce white light or other colouramas.Please refer to Fig. 8 a to Fig. 8 d, it shows that the geometry with the light-emitting component wafer 300 of Fig. 2 c and Fig. 3 c is encapsulating structure 500m, 500n, 500o and the 500p of embodiment, can before bonding wafer 200 and cover plate 212, between light-emitting component wafer 300 and cover plate 212, form a fluorescence coating 236a or a 236b.Shown in Fig. 8 a and Fig. 8 c, can utilize coating modes such as (coating), the fluorescent material of for example phosphorus is covered in cover plate 212 to be regarded on the surface of light-emitting component wafer 300, to form fluorescence coating 236a, wafer 200 and cover plate 212 again bond, have the encapsulating structure 500m and the 500o of the light-emitting component in hole 213 with formation, wherein fluorescence coating 236a is connected in cover plate 212, and with light-emitting component wafer 300 distance of being separated by.Even, in other embodiments, also fluorescent material can be uniformly distributed in the supporting layer 210, make supporting layer 210 also have the function of fluorescence coating, with the luminous efficiency of the encapsulating structure that increases light-emitting component.Perhaps, shown in Fig. 8 b and Fig. 8 d, the optical cement of the fluorescent material of for example phosphorus with for example epoxy resin (epoxy) or silicones can be mixed, fluorescent material is uniformly distributed in the optical cement.Then can utilize coating modes such as (coating), above-mentioned optical cement with fluorescent material is covered on the light-emitting component wafer 300, to form fluorescence coating 236b, wafer 200a and cover plate 212 again bond, to form the encapsulating structure 500n and the 500p of the light-emitting component that does not have the hole, wherein fluorescence coating 236b is filled between light-emitting component wafer 300 and the cover plate 212.In the embodiment shown in Fig. 8 b and Fig. 8 d,, also can directly replace adhesion coating 208b and in order to bonding light-emitting component wafer 300 and cover plate 212 because fluorescence coating 236b is the colloid layer (glue layer) that comprises fluorescent material.Radiator structure in the encapsulating structure of above-mentioned light-emitting component with fluorescence coating also can be shown in Fig. 6 a to Fig. 6 b or Fig. 7 a to Fig. 7 d the interlayer hole connector 232 or the radiative material bed of material 234.
Fig. 9 is the profile of the encapsulating structure 500q of the light-emitting component with microlens structure 238a of other embodiments of the invention.Please refer to Fig. 9, it shows that the geometry with the light-emitting component wafer 300 of Fig. 2 c is the encapsulating structure 500q of embodiment, can be before bonding wafer 200 and cover plate 212, on light-emitting component wafer 300, form a microlens structure 238a, and between light-emitting component wafer 300 and cover plate 212, can increase the function that guiding or focusing come the light of self-emission device wafer 300 whereby, therefore also be common to the design of light-emitting component wafer array.Microlens structure 238a as shown in Figure 9 is arranged in hole 213, and corresponding light-emitting component wafer 300.Above-mentioned microlens structure 238a can be provided with according to customized requirement.Radiator structure in the encapsulating structure of above-mentioned light-emitting component with microlens structure 238a also can arrange in pairs or groups the interlayer hole connector 232 or the radiative material bed of material 234 shown in Fig. 6 a to Fig. 6 b or Fig. 7 a to Fig. 7 d.In addition, above-mentioned encapsulating structure with light-emitting component of microlens array 238a also can be provided with fluorescence coating 236a shown in Fig. 8 a to Fig. 8 d between light-emitting component wafer 300 and cover plate 212, or directly establishes and be covered on the microlens structure 238a.
Figure 10 a to Figure 10 d is the profile of encapsulating structure 500u, 500v, 500w and 500x of the light-emitting component with lens arrangement 240 of other embodiments of the invention.Please refer to Figure 10 a to Figure 10 d, it shows that the geometry with the light-emitting component wafer 300 of Fig. 2 c and Fig. 3 c is encapsulating structure 500u, 500v, 500w and the 500x of embodiment, can after forming encapsulating structure 500u, 500v, 500w and 500x, on cover plate 212, optionally form lens arrangement 240.Said lens structure 240 can be provided with according to customized requirement.Radiator structure in the encapsulating structure of above-mentioned light-emitting component with lens arrangement 240 also can arrange in pairs or groups the interlayer hole connector 232 or the radiative material bed of material 234 shown in Fig. 6 a to Fig. 6 b or Fig. 7 a to Fig. 7 d.In addition, above-mentioned encapsulating structure with light-emitting component of lens arrangement 240 also can be in the fluorescence coating 236a or the 236b that are provided with between light-emitting component wafer 300 and cover plate 212 shown in Fig. 8 a to Fig. 8 d.
Figure 11 a and Figure 11 b are the encapsulating structure 500y of the light-emitting component with reflecting element 242 of other embodiments of the invention and the profile of 500z, and it is the encapsulating structure that is applied to have the light-emitting component in hole 213.Please refer to Figure 11 a and Figure 11 b, it shows that the geometry with the light-emitting component wafer 300 of Fig. 2 c is encapsulating structure 500y and the 500z of embodiment, can be before bonding wafer 200 and cover plate 212, on supporting layer 210, cover for example reflector of metal or dielectric medium of one deck, on the sidewall of adjacent hole 213, to form a reflecting element 242, wherein, the also set angle of tiltable one of reflecting element 242.Because reflecting element 242 can block the part light (shown in the arrow of Figure 11 a and Figure 11 b) that semiconductor layer 202 may be injected supporting layer 210 originally, and reflex to zone directly over the semiconductor layer 202, pass cover plate 212 again and shine the external world, therefore above-mentioned reflecting element 242 can promote the luminous efficiency of semiconductor layer 202.Perhaps, in other embodiments, also can in supporting layer 210, mix dielectric material or utilize above-mentioned dielectric material, have reflection function, equally also can promote the luminous efficiency of semiconductor layer 202 by the different dielectric coefficient difference between supporting layer 210 and the hole 213 as supporting layer 210.
The encapsulating structure of the light-emitting component of the embodiment of the invention comprises a light-emitting component wafer 300, and it comprises semi-conductor layer 202; One dielectric layer 204 is covered in above-mentioned semiconductor layer 202; One electrode layer 206 is arranged on the above-mentioned dielectric layer 204, and is electrically connected to above-mentioned semiconductor layer 202; One cover plate 212 is arranged on the above-mentioned light-emitting component wafer 300; One lead 216, compliance are arranged on the side 203 and the back side 201 of above-mentioned light-emitting component wafer 300, and are electrically connected to above-mentioned electrode layer 206.
The encapsulating structure of the light-emitting component of the embodiment of the invention has the following advantages.Light-emitting component collocation encapsulating structure processing procedure, the encapsulating structure size is much smaller than known luminescence element routing (wire bond, WB) type encapsulating structure.When light-emitting component constitutes pel array with as illumination or demonstration purposes the time, the encapsulating structure of the light-emitting component of the embodiment of the invention can make the spacing of each light-emitting component dwindle, and can increase the continuity of pixel, makes the visual effect of picture better.The encapsulating structure of the light-emitting component of the embodiment of the invention can once be finished element such as the lead, radiator structure, fluorescence coating, microlens array of a plurality of light-emitting component wafers and make, be cut into the encapsulating structure of a plurality of independently light-emitting components again, the lead frame (leadframe) that must known luminescence element routing type encapsulating structure add or beat gold thread, can more known processing procedure simple and fast, its speed of production is very fast comparatively speaking, and element test (testing) processing procedure speed also can greatly promote.In the encapsulating structure of the light-emitting component of the embodiment of the invention, because the light-emitting component wafer is to the distance in the encapsulating structure outside routing type encapsulating structure less than the known luminescence element, the lower rear that add the radiative material bed of material, the radiator structures such as soldered ball or heat radiation weld pad that dispel the heat is located immediately at wafer, do not separate and be printed circuit board, therefore the thermal conductance that can rapidly the light-emitting component wafer be produced is to extraneous, the thermal resistance of encapsulating structure can greatly reduce, thereby is promoted the radiating efficiency of encapsulating structure of light-emitting component and the reliability of light-emitting component.
The above only is preferred embodiment of the present invention; so it is not in order to limit scope of the present invention; any personnel that are familiar with this technology; without departing from the spirit and scope of the present invention; can do further improvement and variation on this basis, so the scope that claims were defined that protection scope of the present invention is worked as with the application is as the criterion.
Being simply described as follows of symbol in the accompanying drawing:
The 100:LED encapsulating structure; The 31:LED wafer; 30: the silicon mosaic wafer; 32: gold thread; 34: lead frame; 37: radiating block; 56: silicone sealant; 35: thoroughly Mirror; 38: the plastic cement outer cover; 200: wafer; 201: the back side; 202: semiconductor layer; 203,207: the side; 204,204a, 204b: the second electrode lay; 206: the One electrode layer; 208a, 208b, 208c, 208d: adhesion coating; 210: supporting layer; 212: cover plate; 213,213a: hole; 214,215: insulating barrier; 216: lead Line; 216a: first lead; 216b: second lead; 218: patterned conductive layer; 220a, 220b: groove; 224: welding resisting layer; 226a, 226b, 226c: weldering Ball; 230a, 230b, 230c: cooling pad; 222,232: the interlayer hole connector; 234: the radiative material bed of material; 236a, 236b: fluorescence coating; 238a, 238b: little The mirror structure; 240: lens arrangement; 242: reflecting element; 300: the light-emitting component crystalline substance Sheet; 400a, 400b, 500a, 500b, 500c, 500d, 500e, 500f, 500i, 500j, 500k, 500l, 500m, 500n, 500o, 500p, 500q, 500u, 500v, 500w, 500x, 500y, 500z: the encapsulation knot of light-emitting component Structure; A1、A
2: Cutting Road.
Claims (17)
1. the encapsulating structure of a light-emitting component is characterized in that, comprising:
One light-emitting component wafer;
One first electrode layer is arranged on the first surface of this light-emitting component wafer;
One the second electrode lay is arranged on the second surface of this light-emitting component wafer;
One cover plate covers the light-emitting area of this light-emitting component wafer;
One insulating barrier coats the side and the back side of this light-emitting component wafer;
One conductor layer No.1 electrically connects this first electrode layer, and extends to the back side of this light-emitting component wafer along this insulating barrier; And
One second conductor layer electrically connects this second electrode lay, and wherein this second conductor layer is positioned on this insulating barrier, and extends to the back side of this light-emitting component wafer along this insulating barrier.
2. the encapsulating structure of light-emitting component according to claim 1 is characterized in that, this first surface comprises this light-emitting area, and this second surface comprises the back side of this light-emitting component wafer.
3. the encapsulating structure of light-emitting component according to claim 2 is characterized in that, this second conductor layer is electrically connected to the second electrode lay that is positioned at this light-emitting component chip back surface by a conductive pole that passes this insulating barrier.
4. the encapsulating structure of light-emitting component according to claim 3 is characterized in that, this first electrode layer is positioned at the edge of this light-emitting area and electrically connects with this conductor layer No.1.
5. the encapsulating structure of light-emitting component according to claim 1 is characterized in that, the diverse location that this first surface at this first electrode layer and this second electrode lay place and this second surface are positioned at this light-emitting area and both are copline not.
6. the encapsulating structure of light-emitting component according to claim 1 is characterized in that, also comprises a fluorescence coating, is arranged between this light-emitting component wafer and this cover plate.
7. the encapsulating structure of light-emitting component according to claim 1 is characterized in that, also comprises:
One adhesion coating is arranged on this light-emitting component wafer; And
One supporting layer is arranged on this adhesion coating, and is positioned at around this light-emitting component wafer.
8. the encapsulating structure of light-emitting component according to claim 1 is characterized in that, the place, the back side of this light-emitting component wafer also comprises one or more radiating pattern.
9. the encapsulating structure of light-emitting component according to claim 8, it is characterized in that, also comprise a plurality of conducting blocks and radiating block, be arranged at the back side of this light-emitting component wafer, wherein said conducting block is electrically connected to this conductor layer No.1 and this second conductor layer, and described radiating block is connected to described radiating pattern.
10. the encapsulating structure of light-emitting component according to claim 9 is characterized in that, this conductor layer No.1 and this second conductor layer and described radiating pattern are same metal level.
11. the encapsulating structure of light-emitting component according to claim 10 is characterized in that, also comprises a plurality of interlayer hole connectors, extends to this light-emitting component wafer from the back side of this light-emitting component wafer, and is connected to described radiating pattern.
12. the encapsulating structure of light-emitting component according to claim 11 is characterized in that, also comprises a radiative material bed of material, is arranged at the back side of this light-emitting component wafer, and between this light-emitting component wafer and this first lead and this second lead.
13. the encapsulating structure of light-emitting component according to claim 7 is characterized in that, also comprises a reflecting element, is arranged on the madial wall or lateral wall of this supporting layer.
14. the manufacture method of the encapsulating structure of a light-emitting component is characterized in that, comprises the following steps:
One wafer is provided, and it comprises a plurality of light-emitting component wafers;
One first electrode layer is arranged on the surface of described light-emitting component wafer;
One the second electrode lay is arranged on another surface of described light-emitting component wafer;
On the light-emitting area of the light-emitting component wafer of this wafer, cover a cover plate;
At least a part that removes this wafer rear to be forming a groove, and exposes the contact-making surface of this first electrode layer and this second electrode lay; And
Compliance forms at least two conductor layers, and its sidewall from this groove extends to the back side of this wafer, and is electrically connected to the contact-making surface of this first electrode layer and this second electrode lay respectively.
15. the manufacture method of the encapsulating structure of light-emitting component according to claim 14 is characterized in that, forms this conductor layer No.1 and this second conductor layer and comprises that also compliance forms an insulating barrier in the side and the light-emitting component chip back surface of this groove before.
16. the manufacture method of the encapsulating structure of light-emitting component according to claim 15 is characterized in that, also comprises:
Between this light-emitting component wafer and this cover plate, form a fluorescence coating;
Form one or more radiating pattern in the back side of this wafer; And
Form a plurality of conducting blocks and radiating block in the back side of this wafer, wherein said conducting block is electrically connected to this conductor layer No.1 and this second conductor layer, and described radiating block is connected to described radiating pattern.
17. the manufacture method of the encapsulating structure of light-emitting component according to claim 16, it is characterized in that, this conductor layer No.1 and this second conductor layer and described radiating pattern are same metal level, and also comprise and form a plurality of interlayer hole connectors, extend to the described light-emitting component wafer with the back side, and be connected to described radiating pattern from described light-emitting component wafer; And
Implement a cutting step, with respectively this light-emitting component wafer after the separate package.
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| CN 200810098308 CN101587925A (en) | 2008-05-23 | 2008-05-23 | Packaging structure of light-emitting element and manufacturing method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103579010A (en) * | 2012-08-08 | 2014-02-12 | 深南电路有限公司 | Method for manufacturing packaging product with metalized side wall |
| CN104576886A (en) * | 2015-01-07 | 2015-04-29 | 沈光地 | High-quality light-emitting device of lossless coplane electrode, preparing method thereof and alternating-current type vertical light-emitting device |
| CN105470359A (en) * | 2015-12-31 | 2016-04-06 | 天津三安光电有限公司 | High-power LED structure with embedded electrode structure and preparation method of high-power LED structure |
| CN109860353A (en) * | 2018-10-31 | 2019-06-07 | 华灿光电(苏州）有限公司 | A kind of GaN base light emitting epitaxial wafer and preparation method thereof |
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2008
- 2008-05-23 CN CN 200810098308 patent/CN101587925A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103579010A (en) * | 2012-08-08 | 2014-02-12 | 深南电路有限公司 | Method for manufacturing packaging product with metalized side wall |
| CN103579010B (en) * | 2012-08-08 | 2016-12-21 | 深南电路有限公司 | A kind of manufacture method of sidewall metallization encapsulating products |
| CN104576886A (en) * | 2015-01-07 | 2015-04-29 | 沈光地 | High-quality light-emitting device of lossless coplane electrode, preparing method thereof and alternating-current type vertical light-emitting device |
| CN105470359A (en) * | 2015-12-31 | 2016-04-06 | 天津三安光电有限公司 | High-power LED structure with embedded electrode structure and preparation method of high-power LED structure |
| CN105470359B (en) * | 2015-12-31 | 2018-05-08 | 天津三安光电有限公司 | High power LED structure with embedded electrode structure and preparation method thereof |
| CN109860353A (en) * | 2018-10-31 | 2019-06-07 | 华灿光电(苏州）有限公司 | A kind of GaN base light emitting epitaxial wafer and preparation method thereof |
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Application publication date: 20091125 |