CN101582295B - Data update method and system - Google Patents

Abstract

A data updating method and system are applied to a nonvolatile memory, the nonvolatile memory is provided with a plurality of pages capable of erasing data simultaneously, the method comprises the following steps: obtaining a storage page and a storage position corresponding to first data; determining an operation mode of the pages according to a predetermined pattern value; programming the pages to generate a specific set according with the operation mode in each page, wherein the storage position is positioned in the specific set of the storage pages; and performing an update operation on the particular set of data. The invention is used for improving the data updating efficiency of the flash memory, dynamically adjusting the page size of the flash memory without increasing the system cost and influencing the system architecture, improving the utilization rate of the flash memory and effectively improving the data updating efficiency at the same time.

Description

Data update method and system

technical field

The present invention is related to data update, especially related to flash memory (flash memory) with programmable pages, which effectively increases the system flexibility and improves the efficiency of data update.

Background technique

According to the type of data storage and the type of data access mechanism, memory can be divided into two categories: volatile memory and non-volatile memory. Generally speaking, non-volatile memory includes: read only memory (read only memory; ROM), programmable read only memory (programmable read only memory; PROM), erasable programmable read only memory (erasable programmable read only memory) ; EPROM), electrically erasable programmable read only memory (electrically erasable programmable read only memory; EEPROM), and flash memory.

Among them, the electrically erasable programmable read-only memory and flash memory can be repeatedly read and written electrically, and have the function of erasing, so they are widely used in various digital devices. The biggest difference between EEPROM and flash memory is that the former is erased/written in units of one byte (byte), while the latter is erased/written in units of one sector (one sector) Or one page (one page) is a unit of erase/write action.

As far as the EEPROM is concerned, it is not suitable for high-capacity products because it requires a large chip area and is expensive. Compared with EEPROM, although flash memory has the advantages of fast reading speed, small chip area and low power consumption, it sacrifices the flexibility of erasing at the same time. When there is less data to be updated, And it is much smaller than the update unit of flash memory, for example: when a page is used, the area that does not need to be updated originally also performs unnecessary cycle operations of reading, erasing and writing, thereby reducing the read and write of flash memory tolerance.

Contents of the invention

In view of this, the purpose of the present invention is to provide a flash memory with programmable pages, and its data update method and system, in order to improve the data update efficiency of the flash memory, and without increasing the system cost and without affecting the system architecture Next, the page size of the flash memory is dynamically adjusted to improve the utilization rate of the flash memory and effectively improve the efficiency of data updating.

To achieve the above object, in one embodiment, the present invention provides a data updating method, which is applied in a non-volatile memory, and the non-volatile memory has a plurality of pages whose data can be erased at the same time. The steps of the method include: obtaining a storage page and a storage location corresponding to a first data; determining an operation mode of these pages according to a predetermined state value; a specific set of schemas, wherein the storage location is in the specific set of the storage pages; and performing an update operation on the data of the specific set.

To achieve the above object, in another embodiment, the present invention further provides a data update system, which includes: a status register and an embedded device. The state register is used for storing a predetermined state value corresponding to an operation mode. The embedded device includes a flash memory coupled to the state register. The above-mentioned flash memory has a plurality of pages whose data can be erased at the same time, and is used to program these pages according to the predetermined state value, and sequentially change the addressing of each page, so as to generate an operation pattern in each page according to the operation mode. specific collection. In a specific set of a storage page, a first data to be updated is included. The above-mentioned data update system further includes: a microcontroller, which is coupled to the state register and the embedded device, for setting the state register, and executing the flash memory according to the predetermined state value. The updating operation is used for updating the first data.

In order to make the above-mentioned objects, features and advantages of the present invention more comprehensible, the following specific examples will be described in detail with reference to the accompanying drawings.

Description of drawings

FIG. 1 is a block diagram showing a data update system according to an embodiment of the present invention;

FIG. 2 is a schematic diagram showing a memory configuration of an embedded device according to an embodiment of the present invention;

Fig. 3 shows a memory configuration table according to an embodiment of the present invention;

Fig. 4 is a schematic diagram showing a page configuration of the memory configuration table according to Fig. 3;

Fig. 5 is a schematic diagram showing another page configuration of the memory configuration table according to Fig. 3; and

FIG. 6 is a flowchart showing a data updating method according to an embodiment of the present invention.

Reference number

100～data update system;

108～microcontroller;

102～state buffer;

104, 204～embedded device;

106～flash memory;

206～flash data memory;

210, 212～unused program memory;

214 ~ program memory; and

0~511~ storage unit.

Detailed ways

FIG. 1 is a block diagram showing a data update system 100 according to an embodiment of the present invention. As shown in FIG. 1 , the data update system 100 includes a microcontroller 108 , a state register 102 , and an embedded device 104 . The microcontroller 108 is coupled to the state register 102 and the embedded device 104 for setting the state register 102 . The state register 102 stores a predetermined state value corresponding to an operation mode. The embedded device 104 includes a flash memory 106 which, in one embodiment, can be used to store data stored by a user. The microcontroller 108 configures the flash memory 106 according to the predetermined state value, and performs a data update operation on the flash memory 106, which will be further described as follows.

Please refer to FIG. 2 , which is a schematic diagram showing a memory configuration of an embedded device 204 according to an embodiment of the present invention. In this embodiment, the embedded device 204 includes a flash data memory 206 , unused program memories 210 and 212 , and a program memory 214 . It is worth mentioning that the storage capacity of the program memory 214 is usually 1KB (kilo byte), 2KB or 4KB, as shown in FIG. .

In one embodiment, the flash data memory 206 has 8 pages that can simultaneously erase data, such as page 0, page 1, . . . , page 7 as shown in FIG. 2 . In one embodiment, when the microcontroller 108 (FIG. 1) is not enabled to configure these pages or the predetermined state value is not set, the storage capacity of each page can be set to 64 bytes, and according to each A page of storage capacity addresses each page in turn. In other embodiments, the storage capacity of each page can also be set to 16 bytes, and the addressing of each page can be changed sequentially. The operation of programming these pages using the predetermined state value will be further described below.

FIG. 3 shows a memory configuration table according to an embodiment of the present invention. In FIG. 3, the microcontroller 108 (FIG. 1) sets the value of the status register 102 (FIG. 1) according to user requirements: "00", "01", "10" and "11", These correspond to operating modes 0, 1, 2 and 3, respectively.

FIG. 4 is a schematic diagram showing a page configuration of the memory configuration table shown in FIG. 3 . In this embodiment, the value of the state register 102 is 00, and the microcontroller 108 programs page 0, page 1, . . As shown in Figure 4, the storage units of page 0 are 0-63, the storage units of page 1 are 64-127, the storage units of page 2 are 128-191, ..., and the storage units of page 7 are 448-511 . In this way, the storage capacity of each page is 64 bytes, so the total storage capacity of the 8 pages is 512 bytes.

To illustrate the present invention more clearly, please refer to FIG. 5 . FIG. 5 is a schematic diagram showing another page configuration of the memory configuration table in FIG. 3 . In this embodiment, in the operation mode 0, the storage capacity of each page is 64 bytes, and the total storage capacity of the 8 pages is 512 bytes, as indicated by 0˜511 in FIG. 5 . When the value of the status register 102 is set to "01", that is, when it is set to the operation mode 1, the microcontroller 108 further configures pages 0 to 7 to generate a set in each page that meets the operation mode 1 , 0-31 shown in page 0 of FIG. 5 , 32-63 shown in page 1, 64-95 shown in page 2, ..., and 224-255 shown in page 7. The storage capacity of each page is 32 bytes, and the total storage capacity of the 8 pages is 256 bytes.

Similarly, when the value of the state register 102 is set to "10", that is, when it is set to the operation mode 2, the microcontroller 108 configures the storage location of each page, resulting in page 0 as shown in Figure 5 0~15 shown on page 1, 16~31 shown on page 1, 32~47 shown on page 2, ..., and 112~127 shown on page 7. The storage capacity of each page is 16 bytes, and the total storage capacity of 8 pages is 128 bytes.

As mentioned above, when the value of the state register 102 is set to "11", that is, when the operation mode 3 is set, the microcontroller 108 generates a set in each page that conforms to the operation mode 3, as shown in the figure 0-7 marked on page 0 of 5, 8-15 marked on page 1, 16-23 marked on page 2, ..., and 56-63 marked on page 7. The storage capacity of each page is 8 bytes, and the total storage capacity of 8 pages is 64 bytes.

When the user does not store much data, such as motor control parameters, which usually only need a few bytes of storage capacity, updating the motor control parameters in this configuration will effectively reduce the storage area of backup data and reduce updates at the same time required read, erase and write times. For example, if a set of motor control parameters only requires a storage capacity of 6 bytes, the microcontroller 108 can set the state register 102 to "11", and program the state register 102 according to the state value "11". Page 0 to page 7 of the flash data memory 206, as shown in FIG. 5 , generates a set conforming to the operation mode 3 in each page. In this operation mode, the storage capacity of each page is only 8 bytes, which can effectively reduce the writing time required to store the motor control parameters. Similarly, when it is necessary to update the stored motor control parameters, the microcontroller 108 will first read the stored motor control parameters and store them in the backup data storage area, and then perform a page erase on the page storing the motor control parameters. Delete the operation, and then write the modified motor control parameters back to the page to complete an update operation. Because the storage unit required for each page to be erased and written is 8 bytes, in this way, the original time required to update a whole page is greatly reduced. As mentioned above, dynamically adjusting the storage capacity of each page not only preserves the flexibility in use, but also significantly improves the use efficiency of the memory.

FIG. 6 is a flowchart showing a data updating method according to an embodiment of the present invention. The data update method is applied in a non-volatile memory. In one embodiment, the non-volatile memory is a flash memory with a plurality of pages whose data can be erased at the same time. In this embodiment, the flash memory has 8 pages for users to store required data, but it is not limited thereto. When a first data stored in the flash memory needs to be updated, firstly, a storage page and a storage location for storing the first data are obtained (step 602 ). Next, the microcontroller 108 (1st) sets a predetermined state value for determining an operation mode (step 604). Further, the microcontroller 108 programs each page according to the determined operating mode to generate a set in each page that conforms to the operating mode (step 606 ). Wherein, the storage location of the first data is also in the set. The method of programming and configuring each page has been described in detail above, and will not be repeated here.

It should be noted that the first data can also be stored in the flash memory after programming each page. In this way, when the first data needs to be updated, the storage page and the storage location for storing the first data are directly read.

Then, in the storage page, read the data stored in the set as a backup data (step 608). Next, modify the first data in the backup data, for example, modify the relevant control parameters of the motor (step 610). Afterwards, a page erase operation is performed on the storage page, which means erasing the data stored in the set of the storage page (step 612 ). Finally, write the modified backup data into the set to complete the operation of updating the first data (step 614).

To sum up, according to the data updating system and method provided by the present invention, without increasing the system cost and affecting the system architecture, a flash memory with programmable pages is used to dynamically adjust the storage capacity of each page in the flash memory, In order to improve the efficiency of updating data, and make the memory configuration more flexible, allowing users to adjust the required configuration mode, not only provides users with more convenience and autonomy, but also achieves the actual improvement of memory usage efficiency, these All are advantages that the known electrically erasable programmable read-only memory and the flash memory do not have.

Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Any relevant personnel familiar with this technology may make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims (16)

1. a data-updating method is applied in the nonvolatile memory, and this nonvolatile memory has a plurality of pages of obliterated data simultaneously, and this method comprises:

Obtain one first data pairing and store the page and a storage location;

Operator scheme according to these pages of default pattern value decision;

These pages of programming, in each page, to produce a specific collection that meets described operator scheme, wherein, described storage location is arranged in the described specific collection of the described storage page; And

The data of described specific collection are carried out the renewal operation.

2. data-updating method as claimed in claim 1 is characterized in that, carries out the step of upgrading operation, comprising:

In the described storage page, read the data of described specific collection, as a Backup Data;

In this Backup Data, revise described first data;

The described storage page is carried out page erase operation; And

In the described storage page, described Backup Data is write described specific collection.

3. data-updating method as claimed in claim 2 is characterized in that, when the described storage page is carried out page erase operation, is the stored data of described specific collection of wiping the described storage page.

4. data-updating method as claimed in claim 1 is characterized in that each page has identical memory capacity.

5. data-updating method as claimed in claim 1 is characterized in that, the memory capacity of described specific collection is to be 2 multiple.

6. data-updating method as claimed in claim 1 is characterized in that the specific collection of each page has identical memory capacity.

7. data-updating method as claimed in claim 1 is characterized in that, the memory capacity of the specific collection of each page is the memory capacity less than each page.

8. data-updating method as claimed in claim 1 is characterized in that, described nonvolatile memory is to be a flash memories.

9. a data update system is characterized in that, this data update system comprises:

The same attitude buffer stores the default pattern value corresponding to an operator scheme; And

One embedded equipment comprises a flash memories, and is coupled to described appearance attitude buffer; This flash memories has a plurality of pages of obliterated data simultaneously, in order to programme according to described default pattern value these pages and the addressing of changing each page in regular turn; In each page, to produce a specific collection that meets described operator scheme; Wherein, in a specific collection of a storage page, comprise one first data to be updated.

10. data update system as claimed in claim 9 is characterized in that, this data update system more comprises:

One microcontroller is coupled to described appearance attitude buffer and described embedded equipment, in order to setting described appearance attitude buffer, and according to described default pattern value described flash memories is carried out and to be upgraded operation, in order to upgrade described first data.

11. data update system as claimed in claim 10; It is characterized in that; Described microcontroller reads the stored data of described specific collection of the described storage page earlier, to revise the content of described first data when carrying out the renewal operation; And, write back the described storage page in order to data with amended described specific collection to described storage page execution page erase operation.

12. data update system as claimed in claim 11 is characterized in that, when the described storage page is carried out page erase operation, is the stored data of described specific collection of wiping the described storage page.

13. data update system as claimed in claim 9 is characterized in that, each page has identical memory capacity.

14. data update system as claimed in claim 9 is characterized in that, the memory capacity of described specific collection is to be 2 multiple.

15. data update system as claimed in claim 9 is characterized in that, the specific collection of each page has identical memory capacity.

16. data update system as claimed in claim 9 is characterized in that, the memory capacity of the specific collection of each page is the memory capacity less than each page.

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