CN101565813B - MgO film electron beam evaporation method and device - Google Patents
MgO film electron beam evaporation method and device Download PDFInfo
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- CN101565813B CN101565813B CN2009100278660A CN200910027866A CN101565813B CN 101565813 B CN101565813 B CN 101565813B CN 2009100278660 A CN2009100278660 A CN 2009100278660A CN 200910027866 A CN200910027866 A CN 200910027866A CN 101565813 B CN101565813 B CN 101565813B
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Abstract
The invention relates to an MgO film electron beam evaporation method and a device. The device comprises at least one MgO film electron beam evaporation device which is arranged inside a vacuum room (12) and comprises a film forming speed adjusting device (101), a crucible (301), an evaporation angle controlling device (121) and an electron gun (501); one end of each film forming speed adjusting device (101) is arranged on the top of the vacuum room (12); the other end of the each film forming speed adjusting device (101) is connected with a corresponding glass baseplate of an MgO film needed to be prepared; the crucible (301) for placing an MgO raw material is arranged under the glass baseplate; the evaporation angle controlling device (121) is arranged on the crucible (301); and the electron gun (501) is arranged on the lower part of the crucible (301). The method and the device have the advantages of having high process stability and high equipment utilization rate and reducing the pollution to a vacuum system and the cost of cleaning a linerboard.
Description
Technical field
The present invention relates to a kind of MgO method for manufacturing thin film and device, the preparation method and the device of MgO film in especially a kind of plasma panel, a kind of specifically MgO film electron beam evaporation preparation method and device.
Background technology
At present; In plasma panel PDP technology; The inertia discharge gas is sealed in the front-back baseboard that has scan electrode and addressing electrode respectively; Discharge gas is ionized to plasma body, and discharge gas is excited and launches ultraviolet ray in this ionization process, and ultraviolet ray excited fluorescent material visible emitting of placing at specific position.Need form the medium layer of about 20～30 μ m of a layer thickness at electrode surface, play the storage wall electric charge and also play insulating effect simultaneously to keep geseous discharge.When between electrode, be applied in the high-frequency ac voltage of specific waveforms, discharge gas is ionized to plasma body, positively charged ion meeting directive cathode electrode, and the common anti-ion bombardment poor ability of material of making medium layer.For medium layer is destroyed rapidly by ion bombardment, also to cover layer protecting film again on the medium layer surface, do not receive cationic bombardment with protective dielectric layer.This protective membrane at first will have very high anti-sputter property, because protective membrane directly contacts with discharge gas, the performance of the electric property article on plasma image display of protective membrane also has very big influence.
The MgO material can have good anti-sputter property through the formed film of appropriate preparation method; Also has simultaneously very strong secondary electron yield; Therefore, all use the MgO film as protective membrane in the present commercial plasma panel, particularly the MgO film of deposited by electron beam evaporation plated film; Be the unique selection of current commercial production MgO, additive method such as sol-gel method or dc sputtering are all owing to the reason on technology realization or the performance can't be applied in the actual use.As shown in Figure 2, electron beam evaporation MgO utilizes electron beam gun 5 emission high-power electron beam rifle line 7 bombardments under high-voltage power supply 6 drives to be positioned at the MgO raw material 2 of crucible 3, makes it form MgO particle flux 1, and postcooling forms film on particle flies substrate 8.
Traditional electron beam evaporation MgO plated film is not to the restriction of evaporation dispersion angle; The material particle flux 1 that is evaporated is launched to all directions by the Knudsen cosine distribution; The actual particle that reaches substrate 8 surfaces has only a very little part, and most of MgO material all flies on the Vakuumkammer inwall 10; In order to improve homogeneity, substrate frame 9 can be pressed certain speed and rotated simultaneously, and when a plurality of electron beam gun were worked simultaneously, preparing film under the different condition simultaneously can't realize.The method that traditional electron beam evaporation MgO plated film improves rate of film build is to strengthen electron beam gun line 7, because the equational existence of reversible reaction, MgO at high temperature can decompose:
2MgO＝2Mg+O
2
In order to prevent that the MgO raw material 2 in the crucible 3 from decomposing, and introduces O with pipeline 4 near crucible 3
2Response bias is carried out to the left side in equation.Along with the increase of electron beam gun line 7, just need to feed more O
2, make the more and O of MgO particle flux 1 meeting that is evaporated
2Molecule bumps and the change of flight direction can't directly arrive substrate 8 surfaces, and therefore, actual film forming compactness is not good, and efficient is low on the contrary, feeds O simultaneously
2The variation of amount exerts an influence to the crystal property of final film, and too high electron beam gun line 7 also can make and form very thick MgO layer very soon on the liner plate on the inwall 10 of Vakuumkammer simultaneously, has a strong impact on the Vakuumkammer environment, increases the cleaning cost of liner plate.
Summary of the invention
The objective of the invention is to traditional electron beam evaporation MgO plated film to the restriction of evaporation dispersion angle, make the actual amount that reaches substrate surface of the material particle flux that is evaporated very little; In the time of can't realizing that a plurality of electron beam gun are worked simultaneously, prepare film under the different condition simultaneously; The actual not good and inefficiency of film forming compactness; Influence the Vakuumkammer environment; Increase the problem of the cleaning cost of liner plate, propose a kind of technology stability is high, plant factor is high, minimizing is cleaned the cost of liner plate to the pollution and the reduction of vacuum system MgO film electron beam evaporation preparation method and device.
Technical scheme of the present invention is:
A kind of MgO film electron beam evaporation preparation method, it may further comprise the steps:
A. with substrate be placed on evaporation source directly over, the rate of film build setting device is set, and to regulate the distance range of substrate and evaporation source be 30-60cm;
B. the evaporation angle controller of regulating on the evaporation source makes the evaporation angle in 50 ° of-130 ° of scopes, after adjusting, opens the vacuum plating unit exhaust;
C. the coating equipment exhaust finishes; After vacuum tightness reaches 1.0 * 10-3Pa; Open the electron beam gun power supply electron beam gun divergent bundle is evaporated the MgO raw material of evaporation source, open direction that oxygen introduction pipe control oxygen feeds simultaneously the oxygen of the indoor feeding 10-200Sccm of vacuum;
The particle of d.MgO raw materials evaporate emits from evaporation source, and when evaporation particle was run into substrate, cooling formed the MgO film.
Evaporation source of the present invention is the crucible that the MgO raw material is housed.
MgO film electron beam evaporation device of the present invention is a plurality of.
A kind of MgO film electron beam evaporation preparation facilities; It is characterized in that it comprises at least one MgO film electron beam evaporation device; Described MgO film electron beam evaporation device is installed in the Vakuumkammer, and it comprises rate of film build setting device, crucible, evaporation angle controller and electron beam gun, and an end of each rate of film build setting device is installed in the top of Vakuumkammer; The other end links to each other with the glass substrate of corresponding required preparation MgO film; The crucible that is used to hold the MgO raw material is installed under glass substrate, and the evaporation angle controller is installed on the crucible, and electron beam gun is installed in the below of crucible.
Beneficial effect of the present invention:
The present invention can effectively improve the rate of film build of MgO film under the situation that does not change electron beam gun output electronic beam current, and to the not influence of other processing parameters, has guaranteed the stability of technology.
The present invention can accomplish the MgO film of at least two kinds of different technical parameters preparations in the first procedure process, improved usage ratio of equipment greatly.
The present invention can reduce the bond area of evaporating materials on the Vakuumkammer interior lining panel, reduces the pollution to vacuum system, reduces the cost that cleans liner plate.
The present invention can not cause vaporator rate to descend because of introducing too much working gas when the operating pressure in the adjustment evaporation technology, guarantees the feasibility of processing parameter.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Fig. 2 is a prior art structural representation of the present invention.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is further described.
As shown in Figure 1, a kind of MgO film electron beam evaporation preparation method, it may further comprise the steps: with substrate be placed on evaporation source directly over, distance that rate of film build setting device 101 regulates substrates and evaporation source is set in 30-60cm; Then, the evaporation angle controller of regulating on the evaporation source 121 makes the evaporation angle in 50 ° of-130 ° of scopes, after adjusting, opens the vacuum plating unit exhaust; The coating equipment exhaust finishes, and vacuum tightness reaches 1.0 * 10
-3After the Pa, open electron beam gun power supply 601 electron beam gun 501 divergent bundles are evaporated the MgO raw material of evaporation source, open direction that oxygen introduction pipe control oxygen feeds simultaneously the oxygen of the indoor feeding 10-200Sccm of vacuum; At last, the particle of MgO raw materials evaporate emits from evaporation source, and when evaporation particle was run into substrate, cooling formed the MgO film.
Evaporation source of the present invention is the crucible 301 that the MgO raw material is housed.
MgO film electron beam evaporation device of the present invention is a plurality of; Described MgO film electron beam evaporation device is installed in the Vakuumkammer 12; It comprises rate of film build setting device 101, crucible 301, evaporation angle controller 121 and electron beam gun 501; One end of each rate of film build setting device 101 is installed in the top of Vakuumkammer 12, and the other end links to each other with the glass substrate of corresponding required preparation MgO film, and the crucible 301 that is used to hold the MgO raw material is installed under glass substrate; Evaporation angle controller 121 is installed on the crucible 301, and electron beam gun 501 is installed in the below of crucible 301.
During practical implementation:
MgO film electron beam evaporation device of the present invention is a plurality of; As shown in Figure 2; With a MgO film electron beam evaporation device is example, electron beam gun 501, electron beam gun 502 and two crucible 301, crucibles 302 that MgO raw material 2 is housed is housed, crucible 301 corresponding rate of film build setting devices 101 in Vakuumkammer 12; Crucible 302 corresponding rate of film build setting devices 102, glass substrate 801 is installed in respectively on two rate of film build setting devices 101,102 with glass substrate 802.When beginning to prepare film, at first calculate the processing parameter of the MgO film needs that will prepare, comprise rate of film build, working gas pressure and thickness can be provided with two groups of different parameter; Next rate of film build as required is provided with rate of film build setting device 101,102 respectively; The size of calculating crucible 301 and crucible 302 evaporation dispersion angles according to the size and rate of film build ordering parameter 101, the 102 set respectively values of glass substrate 801 and glass substrate 802 then; For make glass substrate 801 and the equal difference of glass 802 upper film thickness be no more than ± 10%; Two evaporation angle controllers 121,122 are set respectively coincide evaporation dispersion angle and calculated value; After setting; Opening vacuum plating unit starts working; After treating that the vacuum system exhaust finishes, open electron beam gun power supply 601 and with electron beam gun power supply 602 electron beam gun 501 and electron beam gun 502 divergent bundles are evaporated respectively to crucible 301 and crucible 302 interior MgO raw materials 2, the direction that oxygen introduction pipe 11 control oxygen that simultaneously need be special-purpose feed is used the quantitative oxygen of Vakuumkammer 12 interior feedings; Make it help protecting in the film process MgO raw material not decompose, also reach the requirement of control film performance simultaneously.
The present invention does not relate to all identical with the prior art prior art that maybe can adopt of part and realizes.
Claims (2)
1. MgO film electron beam evaporation preparation method is characterized in that it may further comprise the steps:
A. with substrate be placed on evaporation source directly over, rate of film build setting device (101) is set, and to regulate the distance range of substrate and evaporation source be 30-60cm;
B. the evaporation angle controller of regulating on the evaporation source (121) makes the evaporation angle in 50 ° of-130 ° of scopes, after adjusting, opens the vacuum plating unit exhaust;
C. the coating equipment exhaust finishes, and vacuum tightness reaches 1.0 * 10
-3Behind the Pa, open electron beam gun power supply (601) electron beam gun (501) divergent bundle is evaporated the MgO raw material of evaporation source, open direction that oxygen introduction pipe control oxygen feeds simultaneously the oxygen of the indoor feeding 10-200Sccm of vacuum;
The particle of d.MgO raw materials evaporate emits from evaporation source, and when evaporation particle was run into substrate, cooling formed the MgO film.
2. MgO film electron beam evaporation preparation method according to claim 1 is characterized in that described evaporation source is the crucible (301) that the MgO raw material is housed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100278660A CN101565813B (en) | 2009-05-18 | 2009-05-18 | MgO film electron beam evaporation method and device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100278660A CN101565813B (en) | 2009-05-18 | 2009-05-18 | MgO film electron beam evaporation method and device |
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| CN101565813A CN101565813A (en) | 2009-10-28 |
| CN101565813B true CN101565813B (en) | 2012-08-08 |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102051575B (en) * | 2011-01-07 | 2012-05-23 | 东南大学 | Magnesium oxide vapor deposition device |
| KR101906358B1 (en) * | 2012-02-21 | 2018-10-11 | 삼성디스플레이 주식회사 | Depositing apparatus and method for manufacturing organic light emitting diode display using the same |
| CN103215550A (en) * | 2013-03-28 | 2013-07-24 | 同济大学 | Plating method for improving laser damage threshold of near-infrared high-reflective film |
| CN103695839B (en) * | 2013-12-07 | 2016-05-18 | 深圳市金凯新瑞光电有限公司 | A kind of ion gun cleaning device being applied in filming equipment |
| CN105401125B (en) | 2015-12-15 | 2018-09-04 | 深圳市华星光电技术有限公司 | The evaporation coating method and evaporation coating device of substrate for Organic Electricity laser display |
| CN108060397A (en) * | 2017-12-25 | 2018-05-22 | 浙江工业大学 | A kind of surface graded film preparation device based on chaotic source material |
| DE102018131905B4 (en) * | 2018-12-12 | 2024-04-25 | VON ARDENNE Asset GmbH & Co. KG | Evaporation arrangement and method |
| CN110904410A (en) * | 2019-12-17 | 2020-03-24 | 北京工业大学 | A device and method for preparing magnesium oxide-based thin films with high secondary emission properties |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1268922A (en) * | 1997-06-06 | 2000-10-04 | 康宁股份有限公司 | Method for forming a silicon layer on a surface |
| CN101294271A (en) * | 2007-04-26 | 2008-10-29 | 索尼株式会社 | Deposition apparatus |
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2009
- 2009-05-18 CN CN2009100278660A patent/CN101565813B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1268922A (en) * | 1997-06-06 | 2000-10-04 | 康宁股份有限公司 | Method for forming a silicon layer on a surface |
| CN101294271A (en) * | 2007-04-26 | 2008-10-29 | 索尼株式会社 | Deposition apparatus |
Non-Patent Citations (1)
| Title |
|---|
| 喻志农等.氧分压对氧化镁薄膜结构的影响.《真空科学与技术》.2000,第20卷(第6期),437-441. * |
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