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CN101562221A - 侧面发光二极管 - Google Patents

侧面发光二极管 Download PDF

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Publication number
CN101562221A
CN101562221A CNA2008100668313A CN200810066831A CN101562221A CN 101562221 A CN101562221 A CN 101562221A CN A2008100668313 A CNA2008100668313 A CN A2008100668313A CN 200810066831 A CN200810066831 A CN 200810066831A CN 101562221 A CN101562221 A CN 101562221A
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China
Prior art keywords
bowl cup
light
emitting diode
substrate
packaging body
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Pending
Application number
CNA2008100668313A
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English (en)
Inventor
张家寿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hong Jun Precision Industry Co ltd
Fuzhun Precision Industry Shenzhen Co Ltd
Original Assignee
Hong Jun Precision Industry Co ltd
Fuzhun Precision Industry Shenzhen Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Hong Jun Precision Industry Co ltd, Fuzhun Precision Industry Shenzhen Co Ltd filed Critical Hong Jun Precision Industry Co ltd
Priority to CNA2008100668313A priority Critical patent/CN101562221A/zh
Priority to US12/184,244 priority patent/US20090261725A1/en
Publication of CN101562221A publication Critical patent/CN101562221A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0028—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed refractive and reflective surfaces, e.g. non-imaging catadioptric systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0061—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0071—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source adapted to illuminate a complete hemisphere or a plane extending 360 degrees around the source
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)

Abstract

一种侧面发光二极管，包括基板、发光芯片、碗杯以及封装体，所述碗杯设于基板上，在碗杯与基板间形成一收容空间，所述发光芯片设于所述收容空间内，与所述基板电连接，所述封装体填充于所述收容空间内，将所述发光芯片封装至所述碗杯内，所述封装体的顶部形成一反射层，将射向封装体顶面的光线反射向所述碗杯的侧面，上述侧面发光二极管利用封装体顶部的反射层将射向封装体顶面的光线反射向碗杯的侧面，提升了侧面光的取出效率。

Description

侧面发光二极管
技术领域
本发明涉及一种光学元件，特别是一种侧面发光二极管。
背景技术
发光二极管由于具有体积小、效能小、寿命长及环保等特征，已被广泛应用于多种场合。
图1所示为一种侧面发光二极管10。所述发光二极管10利用正梯形的侧面14结构，来减小到达侧面14的光线的入射角，从而减小光线在侧面14处的全反射，使光线更容易由透明的侧面14射出，达到侧面14发光的目地。同时，在靠近顶面13的中心轴处设置一凹槽13A，藉以增加射向顶面13的光线的入射角，使光线在顶面13处发生全反射，限制顶面13出光的机率，并可将更多的光线反射向侧面14，进一步增强侧面14出光的效率。然而，此种发光二极管10中，凹槽13A的制程较为复杂，且制作出的凹槽13A的表面也不平滑，使一部分光线仍可由发光二极管10的顶面13射出，致使所述发光二极管10限制顶面13出光的效果仍不太理想，降低了其侧面14出光的效率。
发明内容
有鉴于此，有必要提供一种具有较高出光效率的侧面发光二极管。
一种侧面发光二极管，包括基板、发光芯片、碗杯以及封装体，所述碗杯设于基板上，在碗杯与基板间形成一收容空间，所述发光芯片设于所述收容空间内，并与所述基板电连接，所述封装体填充于所述收容空间内，将所述发光芯片封装至所述碗杯内，所述封装体的顶部形成一反射层，将射向封装体顶面的光线反射向所述碗杯的侧面。
上述侧面发光二极管利用封装体顶部的反射层将射向封装体顶面的光线反射向碗杯的侧面，使封装体的顶部无需开设凹槽即可将更多的光线反射向碗杯的侧面，提升了侧面光的取出效率。
下面参照附图，结合实施例对本发明作进一步描述。
附图说明
图1为一种相关的侧面发光二极管的示意图。
图2为本发明侧面发光二极管的一个较佳实施方式的立体图。
图3为图2的剖视图。
具体实施方式
请参阅图2及图3，本发明侧面发光二极管20包括基板21、碗杯22、发光芯片23、电极24、金线25、引脚(图未示)以及封装体26。
其中，所述基板21由导电及导热的金属等材料制成。
所述碗杯22由环氧树脂、玻璃等透光性材料制成，其轴向截面大致呈正梯形，并设于基板21上方，在碗杯22与基板21间形成一收容空间。
所述发光芯片23大致呈矩形，其设于所述收容空间内，藉由银胶黏附于所述基板21上。
所述电极24设于基板21上方，通过所述金线25与基板21电连接。
所述基板21通过引脚与外部电源相连。
所述封装体26由环氧树脂、硅树脂等透光性材料制成，其填充于收容空间内，将发光芯片23、电极24以及金线25封装至所述收容空间内。
另外，所述封装体26的顶部26a形成有反射层27，以将所述发光芯片23发出的光反射向封装体26的侧面。所述反射层27的材料选自铝、银等具有高反射率的材料，藉由喷涂、蒸镀、溅射等方法形成于封装体26的顶部26a，使所述反射层27具有较高的反射效率。
所述碗杯22的侧面为一粗糙的表面，以增加碗杯22的侧面的出光率。本实施例中，所述碗杯22的侧面由下而上设有若干个环形的凸起28，所述凸起28的最大直径由碗杯22的底部向顶部逐渐减小。可以理解地，也可以采用其他方式使碗杯22的侧面形成粗糙的表面，如在碗杯22的侧面形成多个细小的凸点或形成多个细小的凹陷等。
所述侧面发光二极管20工作时，发光芯片23所发出的光一部分直接射向碗杯22的侧面，由碗杯22的侧面离开所述发光二极管，而另一部分光线则射向封装体26的顶部26a，经反射层27反射后射向碗杯22的侧面，再由碗杯22的侧面离开所述侧面发光二极管20。
上述侧面发光二极管20藉由碗杯22的正梯形设计减小了射向碗杯22的侧面的光线的入射角，减小了射向碗杯22的侧面的光线的全反射现象，提升了所述侧面发光二极管20的出光率；上述侧面发光二极管20还利用封装体26顶部的反射层27将射向封装体26顶部26a的光线反射向碗杯22的侧面，使封装体26的顶部26a无需开设凹槽13A即可将更多的光线反射向碗杯22的侧面，进一步提升了光从碗杯22的侧面的取出效率。另外，上述侧面发光二极管20还利用所述碗杯22的侧面的表面粗糙化更进一步地增进了光的取出效率。

Claims (7)

1.一种侧面发光二极管，包括基板、发光芯片、碗杯以及封装体，所述碗杯设于基板上，在碗杯与基板间形成一收容空间，所述发光芯片设于所述收容空间内，并与所述基板电连接，所述封装体填充于所述收容空间内，将所述发光芯片封装至所述碗杯内，其特征在于：所述封装体的顶部形成一反射层，将射向封装体顶部的光线反射向所述碗杯的侧面。
2.如权利要求1所述的侧面发光二极管，其特征在于：所述反射层的材料选自铝、银。
3.如权利要求1所述的侧面发光二极管，其特征在于：所述碗杯的侧面为一粗糙的表面。
4.如权利要求3所述的侧面发光二极管，其特征在于：所述碗杯的侧面具有若干个环形的凸起。
5.如权利要求4所述的侧面发光二极管，其特征在于：所述环形凸起的直径由碗杯底部向顶部逐渐减小。
6.如权利要求3所述的侧面发光二极管，其特征在于：所述碗杯的侧面密布多个凸点或凹陷。
7.如权利要求1所述的侧面发光二极管，其特征在于：所述碗杯的侧面的轴向截面为正梯形。
CNA2008100668313A 2008-04-18 2008-04-18 侧面发光二极管 Pending CN101562221A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CNA2008100668313A CN101562221A (zh) 2008-04-18 2008-04-18 侧面发光二极管
US12/184,244 US20090261725A1 (en) 2008-04-18 2008-07-31 Side-view light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNA2008100668313A CN101562221A (zh) 2008-04-18 2008-04-18 侧面发光二极管

Publications (1)

Publication Number Publication Date
CN101562221A true CN101562221A (zh) 2009-10-21

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106784236A (zh) * 2016-11-22 2017-05-31 深圳市华星光电技术有限公司 发光二极管光源及其制造方法、显示面板
WO2020125263A1 (zh) * 2018-12-17 2020-06-25 深圳市瑞丰光电子股份有限公司 一种led封装表面遮挡结构

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018116327A1 (de) * 2018-07-05 2020-01-09 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauteil und Verfahren zur Herstellung eines strahlungsemittierenden Bauteils

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4172196B2 (ja) * 2002-04-05 2008-10-29 豊田合成株式会社 発光ダイオード
US6679621B2 (en) * 2002-06-24 2004-01-20 Lumileds Lighting U.S., Llc Side emitting LED and lens
EP2270887B1 (en) * 2003-04-30 2020-01-22 Cree, Inc. High powered light emitter packages with compact optics
WO2005012952A2 (en) * 2003-07-29 2005-02-10 Light Prescriptions Innovators, Llc Circumferentially emitting luminaires and lens elements formed by transverse-axis profile-sweeps
US7378686B2 (en) * 2005-10-18 2008-05-27 Goldeneye, Inc. Light emitting diode and side emitting lens
US7703950B2 (en) * 2007-11-21 2010-04-27 C-R Control Systems, Inc. Side-emitting lens for LED lamp

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106784236A (zh) * 2016-11-22 2017-05-31 深圳市华星光电技术有限公司 发光二极管光源及其制造方法、显示面板
WO2020125263A1 (zh) * 2018-12-17 2020-06-25 深圳市瑞丰光电子股份有限公司 一种led封装表面遮挡结构

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Open date: 20091021