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CN101540314A - Light emitting diode element and method of forming the same - Google Patents

Light emitting diode element and method of forming the same Download PDF

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Publication number
CN101540314A
CN101540314A CN200810085491A CN200810085491A CN101540314A CN 101540314 A CN101540314 A CN 101540314A CN 200810085491 A CN200810085491 A CN 200810085491A CN 200810085491 A CN200810085491 A CN 200810085491A CN 101540314 A CN101540314 A CN 101540314A
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conductive layer
led
emitting diode
light emitting
phosphor
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朱慕道
叶文勇
庄育洪
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Industrial Technology Research Institute ITRI
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract

The invention provides a light emitting diode element and a method for forming the same. The light-emitting diode element comprises a substrate, a plurality of first light-emitting diode cores formed on the substrate, and a transparent substrate arranged opposite to the substrate, wherein the transparent substrate is provided with a first surface facing the substrate and an opposite second surface, and a patterned conductive layer formed on the first surface, and the patterned conductive layer is electrically connected with the first light-emitting diode cores and is connected with the first light-emitting diode cores in series.

Description

发光二极管元件及其形成方法 Light emitting diode element and method of forming the same

技术领域 technical field

本发明涉及一种发光二极管元件,且特别涉及一种交流发光二极管元件。The invention relates to a light-emitting diode element, and in particular to an AC light-emitting diode element.

背景技术 Background technique

由于具有小尺寸、低耗电、反应速率快、及使用寿命长等优点,发光二极管(LED)已广泛地应用于家用照明、计算机周边设备、通讯产品、交通信号标志、车灯等各种形式的应用。发光二极管通常包括p型半导体层、n型半导体层、与两材料层间的pn结。当施加正向电流于发光二极管时,来自p型半导体层的空穴与来自n型半导体层的电子可于pn结处结合而释放出光子。与传统照明设备(如电灯泡)相较,仅需一次的能量转换便可直接将电能转换为光能,具有很高的能量转换率,可发出高亮度光线并节省能源。Due to the advantages of small size, low power consumption, fast response rate, and long service life, light-emitting diodes (LEDs) have been widely used in various forms such as household lighting, computer peripheral equipment, communication products, traffic signal signs, and car lights. Applications. A light emitting diode generally includes a p-type semiconductor layer, an n-type semiconductor layer, and a pn junction between the two material layers. When a forward current is applied to the LED, holes from the p-type semiconductor layer and electrons from the n-type semiconductor layer can combine at the pn junction to release photons. Compared with traditional lighting equipment (such as light bulbs), only one energy conversion is required to directly convert electrical energy into light energy, which has a high energy conversion rate, can emit high-brightness light and save energy.

一般的LED照明设备,需透过额外电路将交流电源转换为低直流电压(约1V至5V之间)的高直流电流(约小于100mA)来使LED发光。然而,电源经由额外电路转换的过程会造成电力损失,除了使能量转换率下降外,还易使LED照明设备的温度升高而影响LED的运作。此外,额外电路的采用将造成制作成本升高,并降低空间利用率。In general LED lighting equipment, it is necessary to convert the AC power into a low DC voltage (between about 1V and 5V) and a high DC current (about less than 100mA) through an additional circuit to make the LED emit light. However, the process of power conversion through additional circuits will cause power loss. In addition to reducing the energy conversion rate, it is easy to increase the temperature of the LED lighting equipment and affect the operation of the LED. In addition, the adoption of additional circuits will increase the manufacturing cost and reduce the space utilization.

世界专利WO2006004337揭示一种发光二极管,每个发光二极管间以引线方式连接,可靠度会随发光二极管的数目增加而降低。美国专利US20060169993采用导电膜来作为每个发光二极管间的电性连接,为避免发光二极管侧壁导通,需先披覆绝缘层以隔绝各发光二极管。美国专利US7128438揭示利用透明间隙物上的导线来作为每个发光二极管间的电性连接。The world patent WO2006004337 discloses a light-emitting diode, each light-emitting diode is connected by wires, and the reliability will decrease with the increase of the number of light-emitting diodes. US Patent No. 20060169993 uses a conductive film as the electrical connection between each LED. In order to prevent conduction on the side walls of the LEDs, an insulating layer needs to be coated first to isolate the LEDs. US Pat. No. 7,128,438 discloses using conductive wires on transparent spacers as electrical connections between each LED.

发明内容 Contents of the invention

本发明提供一种发光二极管元件,包括基底,形成于基底上的多个第一发光二极管管芯,与基底对向设置的透明基板,透明基板具有第一表面朝向基底及相反的第二表面,以及形成于第一表面上的图案化导电层,且图案化导电层与第一发光二极管管芯电性连接而串联第一发光二极管管芯。The invention provides a light emitting diode element, comprising a substrate, a plurality of first light emitting diode dies formed on the substrate, a transparent substrate disposed opposite to the substrate, the transparent substrate has a first surface facing the substrate and an opposite second surface, and a patterned conductive layer formed on the first surface, and the patterned conductive layer is electrically connected with the first light emitting diode die to connect the first light emitting diode die in series.

本发明另提供一种形成发光二极管元件的方法,包括提供基底,基底上形成有多个第一发光二极管管芯,提供透明基板,使与基底对向设置,透明基板具有第一表面及相反的第二表面,形成图案化导电层于第一表面上,以及反转透明基板,使第一表面朝向基底,并对准贴合于基底上,使图案化导电层与第一发光二极管管芯电性连接而串联第一发光二极管管芯。The present invention further provides a method for forming a light-emitting diode element, which includes providing a substrate on which a plurality of first light-emitting diode dies are formed, providing a transparent substrate so that it is arranged opposite to the substrate, and the transparent substrate has a first surface and an opposite surface. On the second surface, a patterned conductive layer is formed on the first surface, and the transparent substrate is reversed so that the first surface faces the base, and aligned and attached to the base, so that the patterned conductive layer is electrically connected to the first light emitting diode die. The first light-emitting diode dies are connected in series.

为让本发明的上述和其他目的、特征、和优点能更明显易懂,下文特举出优选实施例,并配合附图,作详细说明如下.In order to make the above-mentioned and other objects, features, and advantages of the present invention more comprehensible, the preferred embodiments are listed below, together with the accompanying drawings, and are described in detail as follows.

附图说明 Description of drawings

图1显示本发明实施例中,其上形成有多个发光二极管管芯的基底。FIG. 1 shows a substrate on which a plurality of LED dies are formed in an embodiment of the present invention.

图2a显示本发明一实施例中,用来串联发光二极管管芯的透明板的剖面图。FIG. 2 a shows a cross-sectional view of a transparent plate used to connect LED dies in series according to an embodiment of the present invention.

图2b显示本发明一实施例中,用来串联发光二极管管芯的透明板的上视图。FIG. 2 b shows a top view of a transparent plate used to connect LED dies in series according to an embodiment of the present invention.

图3a显示本发明一实施例的发光二极管元件的剖面图。FIG. 3 a shows a cross-sectional view of an LED device according to an embodiment of the present invention.

图3b显示本发明一实施例的发光二极管元件的上视图。FIG. 3b shows a top view of a light emitting diode device according to an embodiment of the present invention.

图3c显示本发明一实施例中交流电源所串联的发光二极管元件的电路示意图。FIG. 3c shows a schematic circuit diagram of LED elements connected in series with an AC power source in an embodiment of the present invention.

图4显示本发明一实施例的发光二极管元件的电路示意图。FIG. 4 shows a schematic circuit diagram of a light emitting diode device according to an embodiment of the present invention.

图5显示本发明另一实施例的发光二极管元件的剖面图。FIG. 5 shows a cross-sectional view of an LED device according to another embodiment of the present invention.

附图标记说明Explanation of reference signs

100:基底                      101:外延基底100: Substrate 101: Epitaxial substrate

110:第一发光二极管管芯        110p:p型电极110: first light-emitting diode die 110p: p-type electrode

110n:n型电极                  102:n型半导体层110n: n-type electrode 102: n-type semiconductor layer

104:发光层                    106:p型半导体层104: light-emitting layer 106: p-type semiconductor layer

108:电流分布层                112:透明基板108: Current distribution layer 112: Transparent substrate

112a:第一表面                 112b:第二表面112a: first surface 112b: second surface

114:导电层                    114a:图案化导电层114: Conductive layer 114a: Patterned conductive layer

30:交流电源                   110a:第二发光二极管管芯30: AC power supply 110a: Second LED die

116:荧光粉层    100a:透明基底116: Phosphor powder layer 100a: Transparent base

具体实施方式 Detailed ways

本发明提供一种发光二极管元件及其形成方法,透过将其上形成有图案化导电层的透明基板覆盖贴合于具有多个发光二极管管芯的基底,多个发光二极管管芯透过图案化导电层而彼此串联,可直接供应交流电源而使其发光,无需额外的电路。The invention provides a light-emitting diode element and its forming method. By covering and bonding a transparent substrate with a patterned conductive layer formed thereon on a base with a plurality of light-emitting diode dies, the plurality of light-emitting diode dies see through the pattern The conductive layers are connected in series with each other, and AC power can be directly supplied to make it emit light without additional circuits.

图1-3显示本发明一实施例的制作过程。图1显示本发明实施例中,其上形成有多个发光二极管管芯的基底。如图1所示,首先提供基底100。在一实施例中,可将多个独立的发光二极管管芯110贴合于基底100上。在另一实施例中,亦可直接采用发光二极管的外延基板作为基底100,并将其上的外延叠层图案化,而于基底100上形成多个分离的发光二极管管芯110。每一第一发光二极管管芯还包括p型电极110p与n型电极110n。在随后工艺中,p型电极110p与n型电极110n将与形成于透明基板上的图案化导电层电性接触,透过图案化导电层而与外电源(例如交流电源)或其他发光二极管管芯电性连接。p型电极110p可包括金、镍、铂、铝、锡、铟、铬、钛、前述的合金、前述的叠层、或前述的组合。n型电极110n可包括钛、铝、金、铜、锌、前述的合金、前述的叠层、或前述的组合。发光二极管管芯110可发出大抵单一波长的光线,其可为紫外光、可见光、或红外光。1-3 show the fabrication process of an embodiment of the present invention. FIG. 1 shows a substrate on which a plurality of LED dies are formed in an embodiment of the present invention. As shown in FIG. 1 , a substrate 100 is provided first. In one embodiment, a plurality of independent LED dies 110 can be bonded on the substrate 100 . In another embodiment, an epitaxial substrate of a light emitting diode can also be directly used as the substrate 100 , and the epitaxial stacked layer thereon can be patterned to form a plurality of separated light emitting diode dies 110 on the substrate 100 . Each first LED die further includes a p-type electrode 110p and an n-type electrode 110n. In the subsequent process, the p-type electrode 110p and the n-type electrode 110n will be in electrical contact with the patterned conductive layer formed on the transparent substrate, and through the patterned conductive layer, they will be connected to an external power source (such as an AC power source) or other light-emitting diode tubes. core electrical connection. The p-type electrode 110p may include gold, nickel, platinum, aluminum, tin, indium, chromium, titanium, alloys of the foregoing, stacks of the foregoing, or combinations of the foregoing. The n-type electrode 110n may include titanium, aluminum, gold, copper, zinc, the aforementioned alloys, the aforementioned stacked layers, or a combination of the aforementioned. The LED die 110 can emit light of approximately a single wavelength, which can be ultraviolet light, visible light, or infrared light.

在一实施例中,第一发光二极管管芯110可由外延基底101、n型半导体层102、p型半导体层106、及夹设于n型半导体层102与p型半导体层106之间的发光层104所构成,并直接贴合于基底100上。在另一实施例中,先将多个发光二极管管芯110的部分或全部的外延基底101磨去,再贴合于基底100上。在一实施例中,采用外延基板作为基底100,并透过于其上外延成长材料层的叠层,依序例如包括n型半导体层102、发光层104、及p型半导体层106,接着可透过蚀刻工艺移除部分的材料层,而于基底100上形成多个发光二极管管芯110。外延基底101的材料可为蓝宝石(sapphire,Al2O3)、碳化硅、硅、或砷化镓等。110n型半导体层102、p型半导体层106、及发光层104的材料可包括氮化镓、磷化镓、砷磷化镓、或前述的组合,并且可视需求对前述材料层中进行所需的掺杂。发光层104可为单一结构、双异质结构(double-hetero structure,DH)、或多量子阱结构(multi quantum well,MQW)。此外,如图1所示,n型电极110n位于较低的n型半导体层102上,为了在随后工艺中与透明基板上的图案化导电层电性连接,n型电极110n可包括n型接垫与凸块(未显示)使具有足够的高度(大抵与p型电极110p等高)来与图案化金属层接合。In one embodiment, the first LED die 110 can be composed of an epitaxial substrate 101, an n-type semiconductor layer 102, a p-type semiconductor layer 106, and a light-emitting layer sandwiched between the n-type semiconductor layer 102 and the p-type semiconductor layer 106. 104, and directly attached to the substrate 100. In another embodiment, part or all of the epitaxial substrate 101 of the plurality of light emitting diode dies 110 is ground off first, and then bonded on the substrate 100 . In one embodiment, an epitaxial substrate is used as the substrate 100, and through a stack of epitaxially grown material layers thereon, for example, including an n-type semiconductor layer 102, a light-emitting layer 104, and a p-type semiconductor layer 106 in sequence, and then the transparent Part of the material layer is removed by the over-etching process, and a plurality of LED dies 110 are formed on the substrate 100 . The material of the epitaxial substrate 101 can be sapphire (Al 2 O 3 ), silicon carbide, silicon, or gallium arsenide. 110 The material of the n-type semiconductor layer 102, the p-type semiconductor layer 106, and the light-emitting layer 104 may include gallium nitride, gallium phosphide, gallium arsenic phosphide, or a combination of the foregoing, and the aforementioned material layers may be modified as required. doping. The light emitting layer 104 can be a single structure, a double-hetero structure (DH), or a multi quantum well structure (multi quantum well, MQW). In addition, as shown in FIG. 1, the n-type electrode 110n is located on the lower n-type semiconductor layer 102. In order to be electrically connected with the patterned conductive layer on the transparent substrate in the subsequent process, the n-type electrode 110n may include an n-type junction. Pads and bumps (not shown) are of sufficient height (approximately the same height as the p-type electrode 110p) to bond with the patterned metal layer.

在一实施例中,p型半导体层106上还形成有电流分布层108(currentspreading layer),可使电流较轻易地且较均匀地注入电阻值较高的p型半导体层106中。电流分布层108的材料可包括金属材料,例如金、镍、铂、铝、锡、铟、铬、钛、前述的合金、前述的叠层、或前述的组合。电流分布层108的材料亦可包括透明导电氧化物,例如ITO(氧化铟锡)、CTO(氧化镉锡)、IZO(氧化铟锌)、ZnO:Al、ZnGa2O4、SnO2:Sb、Ga2O3:Sn、AgInO2:Sn、In2O3:Zn、CuAlO2、LaCuOS、NiO、CuGaO2、SrCu2O2、前述的叠层、或前述的组合。在一实施例中,电流分布层108较佳选用对于光线吸收率低且反射率低的透明材料。在另一实施例中,电流分布层108亦可选用半透明材料。In one embodiment, a current spreading layer 108 (current spreading layer) is formed on the p-type semiconductor layer 106 , so that current can be more easily and uniformly injected into the p-type semiconductor layer 106 with higher resistance. The material of the current distribution layer 108 may include metal materials such as gold, nickel, platinum, aluminum, tin, indium, chromium, titanium, alloys of the foregoing, stacks of the foregoing, or combinations of the foregoing. The material of the current distribution layer 108 may also include transparent conductive oxides, such as ITO (indium tin oxide), CTO (cadmium tin oxide), IZO (indium zinc oxide), ZnO:Al, ZnGa 2 O 4 , SnO 2 :Sb, Ga 2 O 3 :Sn, AgInO 2 :Sn, In 2 O 3 :Zn, CuAlO 2 , LaCuOS, NiO, CuGaO 2 , SrCu 2 O 2 , the foregoing stacks, or a combination of the foregoing. In one embodiment, the current distribution layer 108 is preferably made of a transparent material with low light absorption rate and low reflectance rate. In another embodiment, the current distribution layer 108 can also be made of translucent material.

接着,制作用来串联发光二极管管芯110的透明板。如图2a所示,提供透明基板112。透明基板可包括可挠式透明基板(例如聚亚酰胺,polyimide)或硬质透明基板(例如玻璃或石英等)。透明基板112具有第一表面112a及相反的第二表面112b。在随后工艺中,将于透明基板112的第一表面112a上形成图案化导电层。在一实施例中,可先于第一表面112a上形成一导电层114,接着可透过例如光刻与蚀刻、能量束蚀刻(如激光)等方式将导电层114图案化为图案化导电层114a。此外,亦可采用剥离工艺(lift-off process),先于透明基板112上形成图案化光致抗蚀剂层(未显示),再沉积导电层114,接着剥除图案化光致抗蚀剂层便可于透明板112上留下图案化导电层114a。图2b显示本发明一实施例中,朝向透明基板112的第一表面112a的上视图。在随后工艺中,图案化导电层114a将作为基底100中的多个第一发光二极管管芯110间的导电通路,可使多个第一发光二极管管芯110彼此串联。图案化导电层114a还可连接至交流电源,形成交流电源与串联的多个第一发光二极管管芯110间的电性连接。图案化导电层114a的材料可为透明导电层、半透明导电层、或不透明导电层。在一实施例中,图案化导电层114a的材料较佳选用透明导电层,可为有机透明导电层、无机透明导电层、或前述的组合。Next, a transparent plate for connecting the LED dies 110 in series is fabricated. As shown in Figure 2a, a transparent substrate 112 is provided. The transparent substrate may include a flexible transparent substrate (such as polyimide) or a rigid transparent substrate (such as glass or quartz, etc.). The transparent substrate 112 has a first surface 112a and an opposite second surface 112b. In subsequent processes, a patterned conductive layer will be formed on the first surface 112 a of the transparent substrate 112 . In one embodiment, a conductive layer 114 may be formed on the first surface 112a first, and then the conductive layer 114 may be patterned into a patterned conductive layer by means such as photolithography and etching, energy beam etching (such as laser) and the like. 114a. In addition, a lift-off process can also be used to form a patterned photoresist layer (not shown) on the transparent substrate 112 first, then deposit the conductive layer 114, and then lift off the patterned photoresist layer, the patterned conductive layer 114 a can be left on the transparent plate 112 . FIG. 2 b shows a top view of the first surface 112 a facing the transparent substrate 112 in an embodiment of the present invention. In subsequent processes, the patterned conductive layer 114a will serve as a conductive path between the plurality of first LED dies 110 in the substrate 100 , so that the plurality of first LED dies 110 can be connected in series. The patterned conductive layer 114 a can also be connected to an AC power source to form an electrical connection between the AC power source and the plurality of first LED dies 110 connected in series. The material of the patterned conductive layer 114a can be a transparent conductive layer, a semi-transparent conductive layer, or an opaque conductive layer. In one embodiment, the material of the patterned conductive layer 114a is preferably a transparent conductive layer, which may be an organic transparent conductive layer, an inorganic transparent conductive layer, or a combination thereof.

接着,如图3a所示,将透明基板112反转,使第一表面112a朝向基底100,并对准贴合于基底100上,而形成本发明一实施例中的发光二极管元件。可透过例如热压或其他适合方式,使第一表面112上的图案化导电层114a分别与多个第一发光二极管管芯110上的p型电极与n型电极相接合,而电性串联该多个第一发光二极管管芯110。在一实施例中,其中发光二极管管芯的n型电极110n透过图案化导电层114a与另一发光二极管管芯的p型电极110p电性连接,而另一发光二极管管芯的n型电极110n亦透过其他图案化导电层114a与下一个发光二极管管芯的p型电极110p电性连接,如此一个管芯接一个管芯将多个第一发光二极管管芯110串联起来。图3b显示本发明一实施例的上视图。透过反转透明基板112并对准贴合于基底100上,透明基板112的第一表面112a上的图案化导电层114a可将多个第一发光二极管管芯110彼此串联。Next, as shown in FIG. 3 a , the transparent substrate 112 is reversed so that the first surface 112 a faces the substrate 100 , and is aligned and bonded on the substrate 100 to form a light emitting diode element in an embodiment of the present invention. The patterned conductive layer 114a on the first surface 112 can be connected to the p-type electrodes and the n-type electrodes on the plurality of first light-emitting diode dies 110 respectively through thermal pressing or other suitable methods, and electrically connected in series. The plurality of first LED dies 110 . In one embodiment, the n-type electrode 110n of the LED die is electrically connected to the p-type electrode 110p of the other LED die through the patterned conductive layer 114a, and the n-type electrode 110p of the other LED die 110n is also electrically connected to the p-type electrode 110p of the next LED die through another patterned conductive layer 114a, so that a plurality of first LED dies 110 are connected in series one by one. Figure 3b shows a top view of an embodiment of the present invention. By inverting the transparent substrate 112 and aligning and attaching it to the substrate 100 , the patterned conductive layer 114 a on the first surface 112 a of the transparent substrate 112 can connect a plurality of first LED dies 110 in series.

在一实施例中,图案化导电层114a还电性连接至交流电源30。本发明实施例中的发光二极管元件可直接使用交流电源而发光。由于发光二极管管芯本身的材料特性,需于p型电极110p施加正偏压,而于n型电极施加负偏压时,才能使发光二极管管芯发光。因此,此实施例中的多个发光二极管管芯110将于交流电源30的正半周期发光,当交流电源30的电压是负半周期时,多个发光二极管管芯110将由于处于反向偏压(reverse-biased)而无法发光。但由于交流电源正负周期小于肉眼可辨识的区间,因此在肉眼观察下,多个发光二极管管芯110仍大抵处于持续发光。图3c显示本发明一实施例中交流电源所串联的发光二极管元件的电路示意图。可视情况调整所串联发光二极管管芯的数目,较佳使每一发光二极管管芯皆分配到大小适合的操作电压。在一实施例中,可形成电阻器或可变电阻来调节每一发光二极管管芯所分配到的操作电压。In one embodiment, the patterned conductive layer 114 a is also electrically connected to the AC power source 30 . The light emitting diode element in the embodiment of the present invention can directly use an AC power source to emit light. Due to the material properties of the LED core itself, it is necessary to apply a positive bias voltage to the p-type electrode 110p and a negative bias voltage to the n-type electrode to make the LED core emit light. Therefore, the plurality of LED dies 110 in this embodiment will emit light in the positive half cycle of the AC power supply 30, and when the voltage of the AC power source 30 is in the negative half cycle, the plurality of LED dies 110 will be reverse biased Pressed (reverse-biased) and unable to shine. However, since the positive and negative periods of the AC power supply are smaller than the intervals that can be recognized by naked eyes, the plurality of LED dies 110 are still generally emitting light continuously under visual inspection. FIG. 3c shows a schematic circuit diagram of LED elements connected in series with an AC power source in an embodiment of the present invention. The number of LED dies connected in series can be adjusted according to the situation, preferably so that each LED die is distributed with a suitable operating voltage. In one embodiment, resistors or variable resistors can be formed to adjust the operating voltage distributed to each LED die.

此外,本发明实施例除了透过图案化导电层串联多个第一发光二极管管芯110外,亦可串联其他多个第二发光二极管管芯。图4显示本发明一实施例中,串联其他多个第二发光二极管管芯的电路示意图。如图4所示,多个第一发光二极管管芯110彼此间的串联方式与图3b所描述的串联方式相同,属正向串联。多个第二发光二极管管芯110a的串联方式与之相反,属反向串联。两串联的发光二极管管芯的阵列彼此并联且还与交流电源30并联。当交流电源30处于正半周期时,多个第一发光二极管管芯110将发光而多个第二发光二极管管芯110a将不发光。反之,当交流电源30处于负半周期时,多个第二发光二极管管芯110a将发光而多个第一发光二极管管芯110将不发光,藉以提供更稳定的照明。图4所示的实施例的形成方式与上述实施例相似。首先,提供其上形成有多个第一发光二极管管芯与多个第二发光二极管管芯的基底。接着,于透明基板上形成图案化导电层,并反转透明基板并接合于基底上便可完成。In addition, in the embodiment of the present invention, in addition to connecting the first LED dies 110 in series through the patterned conductive layer, other second LED dies can also be connected in series. FIG. 4 shows a schematic circuit diagram of a plurality of other second LED dies connected in series in an embodiment of the present invention. As shown in FIG. 4 , the series connection among the plurality of first light-emitting diode dies 110 is the same as that described in FIG. 3 b , which is a forward series connection. The series connection method of the plurality of second LED dies 110a is opposite, which is reverse series connection. The arrays of two serially connected LED dies are connected in parallel with each other and also with the AC power source 30 . When the AC power source 30 is in a positive half cycle, the plurality of first LED dies 110 will emit light while the plurality of second LED dies 110a will not emit light. Conversely, when the AC power source 30 is in the negative half cycle, the plurality of second LED dies 110a will emit light while the plurality of first LED dies 110 will not emit light, thereby providing more stable illumination. The embodiment shown in FIG. 4 is formed in a manner similar to the embodiments described above. First, a substrate is provided on which a plurality of first LED dies and a plurality of second LED dies are formed. Then, a patterned conductive layer is formed on the transparent substrate, and the transparent substrate is reversed and bonded to the base to complete.

图5显示本发明另一实施例的发光二极管元件的剖面图。如图5所示,还可于透明基板112的第二表面112b形成荧光粉层116。荧光粉层116可用以部分吸收或全部吸收由发光二极管管芯所发出的光线,并将所吸收的光线转换为波长较低的光线,藉以提供所需光线的颜色。荧光粉层116的材料可包括有机荧光粉、无机荧光粉、或前述的组合。此外,荧光粉层116中可选用可发出各种不同色光的荧光粉,例如可包括红光荧光粉、绿光荧光粉、蓝光荧光粉、黄光荧光粉、或前述的组合。此外,在一实施例中,可于透明基板112的第二表面112b上的不同区域形成不同材料的荧光粉。每一区域的荧光粉层下可对应至第一发光二极管管芯、第二发光二极管管芯、多个第一发光二极管管芯、多个第二发光二极管管芯、或前述的组合。可透过不同荧光粉材料与其下对应不同发光周期的发光二极管管芯来调和所需的视觉效果。FIG. 5 shows a cross-sectional view of an LED device according to another embodiment of the present invention. As shown in FIG. 5 , a phosphor layer 116 can also be formed on the second surface 112 b of the transparent substrate 112 . The phosphor layer 116 can absorb partially or completely the light emitted by the LED die, and convert the absorbed light into light with a lower wavelength, so as to provide the desired light color. The material of the phosphor layer 116 may include organic phosphor, inorganic phosphor, or a combination thereof. In addition, phosphors that can emit various colors of light can be selected for the phosphor layer 116 , such as red phosphors, green phosphors, blue phosphors, yellow phosphors, or combinations thereof. In addition, in one embodiment, phosphors of different materials can be formed on different regions on the second surface 112 b of the transparent substrate 112 . Each area under the phosphor layer may correspond to a first LED die, a second LED die, a plurality of first LED dies, a plurality of second LED dies, or a combination thereof. The desired visual effects can be adjusted through different phosphor materials and the underlying LED dies corresponding to different light emitting periods.

本发明实施例具有许多优点,透过简单的工艺即可串联多个发光二极管管芯,且能直接使用交流电源而发光,不需额外电路来将交流电源转换为直流电源,可减少电力损耗、降低制作成本、并提高空间利用率。The embodiment of the present invention has many advantages. Through a simple process, a plurality of light-emitting diode dies can be connected in series, and the AC power can be directly used to emit light. There is no need for an additional circuit to convert the AC power to a DC power, which can reduce power consumption. Reduce production costs and improve space utilization.

虽然本发明已以多个优选实施例披露如上,然其并非用以限定本发明,任何所属技术领域的技术人员在不脱离本发明的精神和范围内,当可作任意的更动与润饰,因此本发明的保护范围当视后附的权利要求所界定的为准。Although the present invention has been disclosed above with a number of preferred embodiments, it is not intended to limit the present invention. Those skilled in the art can make any changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims (20)

1.一种发光二极管元件,包括:1. A light emitting diode element, comprising: 基底;base; 多个第一发光二极管管芯,形成于该基底上;a plurality of first LED dies formed on the substrate; 透明基板,与该基底对向设置,该透明基板具有第一表面朝向该基底及相反的第二表面;以及a transparent substrate, disposed opposite to the base, the transparent substrate has a first surface facing the base and an opposite second surface; and 图案化导电层,形成于该第一表面上,且该图案化导电层与该第一发光二极管管芯电性连接而串联该第一发光二极管管芯。A patterned conductive layer is formed on the first surface, and the patterned conductive layer is electrically connected to the first LED die to connect the first LED die in series. 2.如权利要求1所述的发光二极管元件,其中该第一发光二极管管芯包括紫外光发光二极管管芯、可见光发光二极管管芯、红外光发光二极管管芯、或前述的组合。2. The LED device as claimed in claim 1, wherein the first LED die comprises an ultraviolet LED die, a visible light LED die, an infrared LED die, or a combination thereof. 3.如权利要求1所述的发光二极管元件,其中该透明基板包括可挠式透明基板或硬质透明基板。3. The LED device as claimed in claim 1, wherein the transparent substrate comprises a flexible transparent substrate or a rigid transparent substrate. 4.如权利要求1所述的发光二极管元件,其中该图案化导电层包括透明导电层、不透明导电层、或前述的组合。4. The LED device as claimed in claim 1, wherein the patterned conductive layer comprises a transparent conductive layer, an opaque conductive layer, or a combination thereof. 5.如权利要求1所述的发光二极管元件,其中该图案化导电层包括有机透明导电层、无机透明导电层、或前述的组合。5. The LED device as claimed in claim 1, wherein the patterned conductive layer comprises an organic transparent conductive layer, an inorganic transparent conductive layer, or a combination thereof. 6.如权利要求1所述的发光二极管元件,还包括荧光粉层,形成于该第二表面上。6. The LED device as claimed in claim 1, further comprising a phosphor layer formed on the second surface. 7.如权利要求6所述的发光二极管元件,其中该荧光粉层包括有机荧光粉、无机荧光粉、或前述的组合。7. The LED device as claimed in claim 6, wherein the phosphor layer comprises organic phosphor, inorganic phosphor, or a combination thereof. 8.如权利要求6所述的发光二极管元件,其中该荧光粉层包括红光荧光粉、绿光荧光粉、蓝光荧光粉、黄光荧光粉、或前述的组合。8. The LED device as claimed in claim 6, wherein the phosphor layer comprises red phosphor, green phosphor, blue phosphor, yellow phosphor, or a combination thereof. 9.如权利要求1所述的发光二极管元件,还包括多个第二发光二极管管芯,形成于该基底上,且透过该图案化导电层彼此串联,并与该第一发光二极管管芯并联。9. The light emitting diode element according to claim 1, further comprising a plurality of second light emitting diode dies, formed on the substrate, connected in series with each other through the patterned conductive layer, and connected to the first light emitting diode dies in parallel. 10.如权利要求9所述的发光二极管元件,其中该第一发光二极管管芯是正向串联,而该第二发光二极管管芯是反向串联。10. The LED device as claimed in claim 9, wherein the first LED dies are forwardly connected in series, and the second LED dies are reversely connected in series. 11.一种形成发光二极管元件的方法,包括:11. A method of forming a light emitting diode element, comprising: 提供基底,该基底上形成有多个第一发光二极管管芯;providing a substrate on which a plurality of first light emitting diode dies are formed; 提供透明基板,使与该基底对向设置,该透明基板具有第一表面及相反的第二表面;providing a transparent substrate so as to be disposed opposite to the base, the transparent substrate having a first surface and an opposite second surface; 形成图案化导电层于该第一表面上;以及forming a patterned conductive layer on the first surface; and 反转该透明基板,使该第一表面朝向该基底,并对准贴合于该基底上,使该图案化导电层与该第一发光二极管管芯电性连接而串联该第一发光二极管管芯。Reversing the transparent substrate, making the first surface face the base, aligning and attaching it to the base, electrically connecting the patterned conductive layer with the first LED tube core and connecting the first LED tube in series core. 12.如权利要求11所述的形成发光二极管元件的方法,其中该第一发光二极管管芯包括紫外光发光二极管管芯、可见光发光二极管管芯、红外光发光二极管管芯、或前述的组合。12. The method for forming an LED device as claimed in claim 11, wherein the first LED die comprises an ultraviolet LED die, a visible light LED die, an infrared LED die, or a combination thereof. 13.如权利要求11所述的形成发光二极管元件的方法,其中该透明基板包括可挠式透明基板或硬质透明基板。13. The method for forming a light emitting diode device as claimed in claim 11, wherein the transparent substrate comprises a flexible transparent substrate or a rigid transparent substrate. 14.如权利要求11所述的形成发光二极管元件的方法,其中该图案化导电层包括透明导电层、不透明导电层、或前述的组合。14. The method for forming a light emitting diode device as claimed in claim 11, wherein the patterned conductive layer comprises a transparent conductive layer, an opaque conductive layer, or a combination thereof. 15.如权利要求11所述的形成发光二极管元件的方法,其中该图案化导电层包括有机透明导电层、无机透明导电层、或前述的组合。15. The method for forming a light emitting diode device as claimed in claim 11, wherein the patterned conductive layer comprises an organic transparent conductive layer, an inorganic transparent conductive layer, or a combination thereof. 16.如权利要求11所述的形成发光二极管元件的方法,还包括形成荧光粉层于该第二表面上。16. The method of forming a light emitting diode device as claimed in claim 11, further comprising forming a phosphor layer on the second surface. 17.如权利要求16所述的形成发光二极管元件的方法,其中该荧光粉层包括有机荧光粉、无机荧光粉、或前述的组合。17. The method for forming a light emitting diode device as claimed in claim 16, wherein the phosphor layer comprises organic phosphor, inorganic phosphor, or a combination thereof. 18.如权利要求16所述的形成发光二极管元件的方法,其中该荧光粉层包括红光荧光粉、绿光荧光粉、蓝光荧光粉、黄光荧光粉、或前述的组合。18. The method for forming an LED device as claimed in claim 16, wherein the phosphor layer comprises red phosphor, green phosphor, blue phosphor, yellow phosphor, or a combination thereof. 19.如权利要求11所述的形成发光二极管元件的方法,其中该基底上还包括形成有多个第二发光二极管管芯,且透过该图案化导电层彼此串联,并与该第一发光二极管管芯并联。19. The method for forming a light emitting diode element according to claim 11, wherein the substrate further comprises a plurality of second light emitting diode dies formed in series with each other through the patterned conductive layer, and connected to the first light emitting diode The diode dies are connected in parallel. 20.如权利要求19所述的形成发光二极管元件的方法,其中该第一发光二极管管芯是正向串联,而该第二发光二极管管芯是反向串联。20. The method of forming an LED device as claimed in claim 19, wherein the first LED dies are forwardly connected in series, and the second LED dies are reversely connected in series.
CN200810085491A 2008-03-19 2008-03-19 Light emitting diode element and method of forming the same Pending CN101540314A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102185048A (en) * 2011-04-14 2011-09-14 翁小翠 Manufacturing method of high-light emitting rate light-emitting diode (LED) lamp strip
CN102270628A (en) * 2010-06-04 2011-12-07 亿光电子工业股份有限公司 Light source module
CN103000795A (en) * 2011-09-15 2013-03-27 隆达电子股份有限公司 Packaging structure of semiconductor light-emitting element
CN105448902A (en) * 2014-08-25 2016-03-30 中国科学院苏州纳米技术与纳米仿生研究所 LED light-emitting device and manufacture method thereof
CN105870114A (en) * 2016-06-24 2016-08-17 中国科学院半导体研究所 Light emitting device, flexible light emitting device and preparation method thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102270628A (en) * 2010-06-04 2011-12-07 亿光电子工业股份有限公司 Light source module
CN102270628B (en) * 2010-06-04 2013-06-05 亿光电子工业股份有限公司 Light source module
CN102185048A (en) * 2011-04-14 2011-09-14 翁小翠 Manufacturing method of high-light emitting rate light-emitting diode (LED) lamp strip
CN103000795A (en) * 2011-09-15 2013-03-27 隆达电子股份有限公司 Packaging structure of semiconductor light-emitting element
CN103000795B (en) * 2011-09-15 2015-10-28 隆达电子股份有限公司 Packaging structure of semiconductor light-emitting element
CN105448902A (en) * 2014-08-25 2016-03-30 中国科学院苏州纳米技术与纳米仿生研究所 LED light-emitting device and manufacture method thereof
CN105870114A (en) * 2016-06-24 2016-08-17 中国科学院半导体研究所 Light emitting device, flexible light emitting device and preparation method thereof

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