CN101540314A - Light emitting diode element and method of forming the same - Google Patents
Light emitting diode element and method of forming the same Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 73
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 15
- 230000008569 process Effects 0.000 description 9
- 238000009826 distribution Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
Description
技术领域 technical field
本发明涉及一种发光二极管元件,且特别涉及一种交流发光二极管元件。The invention relates to a light-emitting diode element, and in particular to an AC light-emitting diode element.
背景技术 Background technique
由于具有小尺寸、低耗电、反应速率快、及使用寿命长等优点,发光二极管(LED)已广泛地应用于家用照明、计算机周边设备、通讯产品、交通信号标志、车灯等各种形式的应用。发光二极管通常包括p型半导体层、n型半导体层、与两材料层间的pn结。当施加正向电流于发光二极管时,来自p型半导体层的空穴与来自n型半导体层的电子可于pn结处结合而释放出光子。与传统照明设备(如电灯泡)相较,仅需一次的能量转换便可直接将电能转换为光能,具有很高的能量转换率,可发出高亮度光线并节省能源。Due to the advantages of small size, low power consumption, fast response rate, and long service life, light-emitting diodes (LEDs) have been widely used in various forms such as household lighting, computer peripheral equipment, communication products, traffic signal signs, and car lights. Applications. A light emitting diode generally includes a p-type semiconductor layer, an n-type semiconductor layer, and a pn junction between the two material layers. When a forward current is applied to the LED, holes from the p-type semiconductor layer and electrons from the n-type semiconductor layer can combine at the pn junction to release photons. Compared with traditional lighting equipment (such as light bulbs), only one energy conversion is required to directly convert electrical energy into light energy, which has a high energy conversion rate, can emit high-brightness light and save energy.
一般的LED照明设备,需透过额外电路将交流电源转换为低直流电压(约1V至5V之间)的高直流电流(约小于100mA)来使LED发光。然而,电源经由额外电路转换的过程会造成电力损失,除了使能量转换率下降外,还易使LED照明设备的温度升高而影响LED的运作。此外,额外电路的采用将造成制作成本升高,并降低空间利用率。In general LED lighting equipment, it is necessary to convert the AC power into a low DC voltage (between about 1V and 5V) and a high DC current (about less than 100mA) through an additional circuit to make the LED emit light. However, the process of power conversion through additional circuits will cause power loss. In addition to reducing the energy conversion rate, it is easy to increase the temperature of the LED lighting equipment and affect the operation of the LED. In addition, the adoption of additional circuits will increase the manufacturing cost and reduce the space utilization.
世界专利WO2006004337揭示一种发光二极管,每个发光二极管间以引线方式连接,可靠度会随发光二极管的数目增加而降低。美国专利US20060169993采用导电膜来作为每个发光二极管间的电性连接,为避免发光二极管侧壁导通,需先披覆绝缘层以隔绝各发光二极管。美国专利US7128438揭示利用透明间隙物上的导线来作为每个发光二极管间的电性连接。The world patent WO2006004337 discloses a light-emitting diode, each light-emitting diode is connected by wires, and the reliability will decrease with the increase of the number of light-emitting diodes. US Patent No. 20060169993 uses a conductive film as the electrical connection between each LED. In order to prevent conduction on the side walls of the LEDs, an insulating layer needs to be coated first to isolate the LEDs. US Pat. No. 7,128,438 discloses using conductive wires on transparent spacers as electrical connections between each LED.
发明内容 Contents of the invention
本发明提供一种发光二极管元件,包括基底,形成于基底上的多个第一发光二极管管芯,与基底对向设置的透明基板,透明基板具有第一表面朝向基底及相反的第二表面,以及形成于第一表面上的图案化导电层,且图案化导电层与第一发光二极管管芯电性连接而串联第一发光二极管管芯。The invention provides a light emitting diode element, comprising a substrate, a plurality of first light emitting diode dies formed on the substrate, a transparent substrate disposed opposite to the substrate, the transparent substrate has a first surface facing the substrate and an opposite second surface, and a patterned conductive layer formed on the first surface, and the patterned conductive layer is electrically connected with the first light emitting diode die to connect the first light emitting diode die in series.
本发明另提供一种形成发光二极管元件的方法,包括提供基底,基底上形成有多个第一发光二极管管芯,提供透明基板,使与基底对向设置,透明基板具有第一表面及相反的第二表面,形成图案化导电层于第一表面上,以及反转透明基板,使第一表面朝向基底,并对准贴合于基底上,使图案化导电层与第一发光二极管管芯电性连接而串联第一发光二极管管芯。The present invention further provides a method for forming a light-emitting diode element, which includes providing a substrate on which a plurality of first light-emitting diode dies are formed, providing a transparent substrate so that it is arranged opposite to the substrate, and the transparent substrate has a first surface and an opposite surface. On the second surface, a patterned conductive layer is formed on the first surface, and the transparent substrate is reversed so that the first surface faces the base, and aligned and attached to the base, so that the patterned conductive layer is electrically connected to the first light emitting diode die. The first light-emitting diode dies are connected in series.
为让本发明的上述和其他目的、特征、和优点能更明显易懂,下文特举出优选实施例,并配合附图,作详细说明如下.In order to make the above-mentioned and other objects, features, and advantages of the present invention more comprehensible, the preferred embodiments are listed below, together with the accompanying drawings, and are described in detail as follows.
附图说明 Description of drawings
图1显示本发明实施例中,其上形成有多个发光二极管管芯的基底。FIG. 1 shows a substrate on which a plurality of LED dies are formed in an embodiment of the present invention.
图2a显示本发明一实施例中,用来串联发光二极管管芯的透明板的剖面图。FIG. 2 a shows a cross-sectional view of a transparent plate used to connect LED dies in series according to an embodiment of the present invention.
图2b显示本发明一实施例中,用来串联发光二极管管芯的透明板的上视图。FIG. 2 b shows a top view of a transparent plate used to connect LED dies in series according to an embodiment of the present invention.
图3a显示本发明一实施例的发光二极管元件的剖面图。FIG. 3 a shows a cross-sectional view of an LED device according to an embodiment of the present invention.
图3b显示本发明一实施例的发光二极管元件的上视图。FIG. 3b shows a top view of a light emitting diode device according to an embodiment of the present invention.
图3c显示本发明一实施例中交流电源所串联的发光二极管元件的电路示意图。FIG. 3c shows a schematic circuit diagram of LED elements connected in series with an AC power source in an embodiment of the present invention.
图4显示本发明一实施例的发光二极管元件的电路示意图。FIG. 4 shows a schematic circuit diagram of a light emitting diode device according to an embodiment of the present invention.
图5显示本发明另一实施例的发光二极管元件的剖面图。FIG. 5 shows a cross-sectional view of an LED device according to another embodiment of the present invention.
附图标记说明Explanation of reference signs
100:基底 101:外延基底100: Substrate 101: Epitaxial substrate
110:第一发光二极管管芯 110p:p型电极110: first light-emitting diode die 110p: p-type electrode
110n:n型电极 102:n型半导体层110n: n-type electrode 102: n-type semiconductor layer
104:发光层 106:p型半导体层104: light-emitting layer 106: p-type semiconductor layer
108:电流分布层 112:透明基板108: Current distribution layer 112: Transparent substrate
112a:第一表面 112b:第二表面112a:
114:导电层 114a:图案化导电层114:
30:交流电源 110a:第二发光二极管管芯30: AC
116:荧光粉层 100a:透明基底116: Phosphor powder layer 100a: Transparent base
具体实施方式 Detailed ways
本发明提供一种发光二极管元件及其形成方法,透过将其上形成有图案化导电层的透明基板覆盖贴合于具有多个发光二极管管芯的基底,多个发光二极管管芯透过图案化导电层而彼此串联,可直接供应交流电源而使其发光,无需额外的电路。The invention provides a light-emitting diode element and its forming method. By covering and bonding a transparent substrate with a patterned conductive layer formed thereon on a base with a plurality of light-emitting diode dies, the plurality of light-emitting diode dies see through the pattern The conductive layers are connected in series with each other, and AC power can be directly supplied to make it emit light without additional circuits.
图1-3显示本发明一实施例的制作过程。图1显示本发明实施例中,其上形成有多个发光二极管管芯的基底。如图1所示,首先提供基底100。在一实施例中,可将多个独立的发光二极管管芯110贴合于基底100上。在另一实施例中,亦可直接采用发光二极管的外延基板作为基底100,并将其上的外延叠层图案化,而于基底100上形成多个分离的发光二极管管芯110。每一第一发光二极管管芯还包括p型电极110p与n型电极110n。在随后工艺中,p型电极110p与n型电极110n将与形成于透明基板上的图案化导电层电性接触,透过图案化导电层而与外电源(例如交流电源)或其他发光二极管管芯电性连接。p型电极110p可包括金、镍、铂、铝、锡、铟、铬、钛、前述的合金、前述的叠层、或前述的组合。n型电极110n可包括钛、铝、金、铜、锌、前述的合金、前述的叠层、或前述的组合。发光二极管管芯110可发出大抵单一波长的光线,其可为紫外光、可见光、或红外光。1-3 show the fabrication process of an embodiment of the present invention. FIG. 1 shows a substrate on which a plurality of LED dies are formed in an embodiment of the present invention. As shown in FIG. 1 , a
在一实施例中,第一发光二极管管芯110可由外延基底101、n型半导体层102、p型半导体层106、及夹设于n型半导体层102与p型半导体层106之间的发光层104所构成,并直接贴合于基底100上。在另一实施例中,先将多个发光二极管管芯110的部分或全部的外延基底101磨去,再贴合于基底100上。在一实施例中,采用外延基板作为基底100,并透过于其上外延成长材料层的叠层,依序例如包括n型半导体层102、发光层104、及p型半导体层106,接着可透过蚀刻工艺移除部分的材料层,而于基底100上形成多个发光二极管管芯110。外延基底101的材料可为蓝宝石(sapphire,Al2O3)、碳化硅、硅、或砷化镓等。110n型半导体层102、p型半导体层106、及发光层104的材料可包括氮化镓、磷化镓、砷磷化镓、或前述的组合,并且可视需求对前述材料层中进行所需的掺杂。发光层104可为单一结构、双异质结构(double-hetero structure,DH)、或多量子阱结构(multi quantum well,MQW)。此外,如图1所示,n型电极110n位于较低的n型半导体层102上,为了在随后工艺中与透明基板上的图案化导电层电性连接,n型电极110n可包括n型接垫与凸块(未显示)使具有足够的高度(大抵与p型电极110p等高)来与图案化金属层接合。In one embodiment, the
在一实施例中,p型半导体层106上还形成有电流分布层108(currentspreading layer),可使电流较轻易地且较均匀地注入电阻值较高的p型半导体层106中。电流分布层108的材料可包括金属材料,例如金、镍、铂、铝、锡、铟、铬、钛、前述的合金、前述的叠层、或前述的组合。电流分布层108的材料亦可包括透明导电氧化物,例如ITO(氧化铟锡)、CTO(氧化镉锡)、IZO(氧化铟锌)、ZnO:Al、ZnGa2O4、SnO2:Sb、Ga2O3:Sn、AgInO2:Sn、In2O3:Zn、CuAlO2、LaCuOS、NiO、CuGaO2、SrCu2O2、前述的叠层、或前述的组合。在一实施例中,电流分布层108较佳选用对于光线吸收率低且反射率低的透明材料。在另一实施例中,电流分布层108亦可选用半透明材料。In one embodiment, a current spreading layer 108 (current spreading layer) is formed on the p-
接着,制作用来串联发光二极管管芯110的透明板。如图2a所示,提供透明基板112。透明基板可包括可挠式透明基板(例如聚亚酰胺,polyimide)或硬质透明基板(例如玻璃或石英等)。透明基板112具有第一表面112a及相反的第二表面112b。在随后工艺中,将于透明基板112的第一表面112a上形成图案化导电层。在一实施例中,可先于第一表面112a上形成一导电层114,接着可透过例如光刻与蚀刻、能量束蚀刻(如激光)等方式将导电层114图案化为图案化导电层114a。此外,亦可采用剥离工艺(lift-off process),先于透明基板112上形成图案化光致抗蚀剂层(未显示),再沉积导电层114,接着剥除图案化光致抗蚀剂层便可于透明板112上留下图案化导电层114a。图2b显示本发明一实施例中,朝向透明基板112的第一表面112a的上视图。在随后工艺中,图案化导电层114a将作为基底100中的多个第一发光二极管管芯110间的导电通路,可使多个第一发光二极管管芯110彼此串联。图案化导电层114a还可连接至交流电源,形成交流电源与串联的多个第一发光二极管管芯110间的电性连接。图案化导电层114a的材料可为透明导电层、半透明导电层、或不透明导电层。在一实施例中,图案化导电层114a的材料较佳选用透明导电层,可为有机透明导电层、无机透明导电层、或前述的组合。Next, a transparent plate for connecting the LED dies 110 in series is fabricated. As shown in Figure 2a, a
接着,如图3a所示,将透明基板112反转,使第一表面112a朝向基底100,并对准贴合于基底100上,而形成本发明一实施例中的发光二极管元件。可透过例如热压或其他适合方式,使第一表面112上的图案化导电层114a分别与多个第一发光二极管管芯110上的p型电极与n型电极相接合,而电性串联该多个第一发光二极管管芯110。在一实施例中,其中发光二极管管芯的n型电极110n透过图案化导电层114a与另一发光二极管管芯的p型电极110p电性连接,而另一发光二极管管芯的n型电极110n亦透过其他图案化导电层114a与下一个发光二极管管芯的p型电极110p电性连接,如此一个管芯接一个管芯将多个第一发光二极管管芯110串联起来。图3b显示本发明一实施例的上视图。透过反转透明基板112并对准贴合于基底100上,透明基板112的第一表面112a上的图案化导电层114a可将多个第一发光二极管管芯110彼此串联。Next, as shown in FIG. 3 a , the
在一实施例中,图案化导电层114a还电性连接至交流电源30。本发明实施例中的发光二极管元件可直接使用交流电源而发光。由于发光二极管管芯本身的材料特性,需于p型电极110p施加正偏压,而于n型电极施加负偏压时,才能使发光二极管管芯发光。因此,此实施例中的多个发光二极管管芯110将于交流电源30的正半周期发光,当交流电源30的电压是负半周期时,多个发光二极管管芯110将由于处于反向偏压(reverse-biased)而无法发光。但由于交流电源正负周期小于肉眼可辨识的区间,因此在肉眼观察下,多个发光二极管管芯110仍大抵处于持续发光。图3c显示本发明一实施例中交流电源所串联的发光二极管元件的电路示意图。可视情况调整所串联发光二极管管芯的数目,较佳使每一发光二极管管芯皆分配到大小适合的操作电压。在一实施例中,可形成电阻器或可变电阻来调节每一发光二极管管芯所分配到的操作电压。In one embodiment, the patterned
此外,本发明实施例除了透过图案化导电层串联多个第一发光二极管管芯110外,亦可串联其他多个第二发光二极管管芯。图4显示本发明一实施例中,串联其他多个第二发光二极管管芯的电路示意图。如图4所示,多个第一发光二极管管芯110彼此间的串联方式与图3b所描述的串联方式相同,属正向串联。多个第二发光二极管管芯110a的串联方式与之相反,属反向串联。两串联的发光二极管管芯的阵列彼此并联且还与交流电源30并联。当交流电源30处于正半周期时,多个第一发光二极管管芯110将发光而多个第二发光二极管管芯110a将不发光。反之,当交流电源30处于负半周期时,多个第二发光二极管管芯110a将发光而多个第一发光二极管管芯110将不发光,藉以提供更稳定的照明。图4所示的实施例的形成方式与上述实施例相似。首先,提供其上形成有多个第一发光二极管管芯与多个第二发光二极管管芯的基底。接着,于透明基板上形成图案化导电层,并反转透明基板并接合于基底上便可完成。In addition, in the embodiment of the present invention, in addition to connecting the first LED dies 110 in series through the patterned conductive layer, other second LED dies can also be connected in series. FIG. 4 shows a schematic circuit diagram of a plurality of other second LED dies connected in series in an embodiment of the present invention. As shown in FIG. 4 , the series connection among the plurality of first light-emitting diode dies 110 is the same as that described in FIG. 3 b , which is a forward series connection. The series connection method of the plurality of second LED dies 110a is opposite, which is reverse series connection. The arrays of two serially connected LED dies are connected in parallel with each other and also with the
图5显示本发明另一实施例的发光二极管元件的剖面图。如图5所示,还可于透明基板112的第二表面112b形成荧光粉层116。荧光粉层116可用以部分吸收或全部吸收由发光二极管管芯所发出的光线,并将所吸收的光线转换为波长较低的光线,藉以提供所需光线的颜色。荧光粉层116的材料可包括有机荧光粉、无机荧光粉、或前述的组合。此外,荧光粉层116中可选用可发出各种不同色光的荧光粉,例如可包括红光荧光粉、绿光荧光粉、蓝光荧光粉、黄光荧光粉、或前述的组合。此外,在一实施例中,可于透明基板112的第二表面112b上的不同区域形成不同材料的荧光粉。每一区域的荧光粉层下可对应至第一发光二极管管芯、第二发光二极管管芯、多个第一发光二极管管芯、多个第二发光二极管管芯、或前述的组合。可透过不同荧光粉材料与其下对应不同发光周期的发光二极管管芯来调和所需的视觉效果。FIG. 5 shows a cross-sectional view of an LED device according to another embodiment of the present invention. As shown in FIG. 5 , a
本发明实施例具有许多优点,透过简单的工艺即可串联多个发光二极管管芯,且能直接使用交流电源而发光,不需额外电路来将交流电源转换为直流电源,可减少电力损耗、降低制作成本、并提高空间利用率。The embodiment of the present invention has many advantages. Through a simple process, a plurality of light-emitting diode dies can be connected in series, and the AC power can be directly used to emit light. There is no need for an additional circuit to convert the AC power to a DC power, which can reduce power consumption. Reduce production costs and improve space utilization.
虽然本发明已以多个优选实施例披露如上,然其并非用以限定本发明,任何所属技术领域的技术人员在不脱离本发明的精神和范围内,当可作任意的更动与润饰,因此本发明的保护范围当视后附的权利要求所界定的为准。Although the present invention has been disclosed above with a number of preferred embodiments, it is not intended to limit the present invention. Those skilled in the art can make any changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be defined by the appended claims.
Claims (20)
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102185048A (en) * | 2011-04-14 | 2011-09-14 | 翁小翠 | Manufacturing method of high-light emitting rate light-emitting diode (LED) lamp strip |
CN102270628A (en) * | 2010-06-04 | 2011-12-07 | 亿光电子工业股份有限公司 | Light source module |
CN103000795A (en) * | 2011-09-15 | 2013-03-27 | 隆达电子股份有限公司 | Packaging structure of semiconductor light-emitting element |
CN105448902A (en) * | 2014-08-25 | 2016-03-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | LED light-emitting device and manufacture method thereof |
CN105870114A (en) * | 2016-06-24 | 2016-08-17 | 中国科学院半导体研究所 | Light emitting device, flexible light emitting device and preparation method thereof |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN102270628A (en) * | 2010-06-04 | 2011-12-07 | 亿光电子工业股份有限公司 | Light source module |
CN102270628B (en) * | 2010-06-04 | 2013-06-05 | 亿光电子工业股份有限公司 | Light source module |
CN102185048A (en) * | 2011-04-14 | 2011-09-14 | 翁小翠 | Manufacturing method of high-light emitting rate light-emitting diode (LED) lamp strip |
CN103000795A (en) * | 2011-09-15 | 2013-03-27 | 隆达电子股份有限公司 | Packaging structure of semiconductor light-emitting element |
CN103000795B (en) * | 2011-09-15 | 2015-10-28 | 隆达电子股份有限公司 | Packaging structure of semiconductor light-emitting element |
CN105448902A (en) * | 2014-08-25 | 2016-03-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | LED light-emitting device and manufacture method thereof |
CN105870114A (en) * | 2016-06-24 | 2016-08-17 | 中国科学院半导体研究所 | Light emitting device, flexible light emitting device and preparation method thereof |
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