CN101540269B - Method and device for cleaning semiconductor chip - Google Patents
Method and device for cleaning semiconductor chip Download PDFInfo
- Publication number
- CN101540269B CN101540269B CN200810034827A CN200810034827A CN101540269B CN 101540269 B CN101540269 B CN 101540269B CN 200810034827 A CN200810034827 A CN 200810034827A CN 200810034827 A CN200810034827 A CN 200810034827A CN 101540269 B CN101540269 B CN 101540269B
- Authority
- CN
- China
- Prior art keywords
- plate
- substrate
- base material
- transducer
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 94
- 238000000034 method Methods 0.000 title claims abstract description 9
- 239000004065 semiconductor Substances 0.000 title claims description 31
- 239000000758 substrate Substances 0.000 claims abstract description 165
- 239000012530 fluid Substances 0.000 claims description 27
- 239000000126 substance Substances 0.000 claims description 22
- 230000007246 mechanism Effects 0.000 claims description 13
- 239000000463 material Substances 0.000 claims 22
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 3
- 230000001788 irregular Effects 0.000 abstract description 2
- 239000002245 particle Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 3
- 229910001868 water Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
Images
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
发明领域 field of invention
本发明涉及一种清洁半导体基材的方法和装置。更具体地说,涉及采用结合或不结合超声波及兆声波器件的旋转板来提高去处颗粒和污染物的效率,同时实现对于半导体基材结构的最小损伤。The invention relates to a method and device for cleaning semiconductor substrates. More specifically, it relates to the use of rotating plates with or without ultrasonic and megasonic devices to improve the efficiency of particle and contaminant removal while achieving minimal damage to semiconductor substrate structures.
背景技术 Background technique
半导体器件是在半导体基材上使用数个不同处理工序制造,以构成晶体管和互联元件。为把晶体管终端电连接到半导体基材,导电的(例如,金属的)沟道、通孔以及类似的结构会在电介质材料中形成,并作为半导体器件的组成部分。所述沟道以及通孔把在晶体管、半导体器件的内部电路、以及半导体器件的外部电路之间的电信号和电源连接到半导体器件中。Semiconductor devices are fabricated using several different processing steps on a semiconductor substrate to form transistors and interconnects. To electrically connect transistor terminals to the semiconductor substrate, conductive (eg, metallic) channels, vias, and similar structures are formed in the dielectric material as part of the semiconductor device. The channels and vias connect electrical signals and power between transistors, internal circuits of the semiconductor device, and external circuits of the semiconductor device into the semiconductor device.
为形成互联元件,半导体基材可能经过下列的操作:例如,掩膜(masking)、刻蚀(etching)和沉积步骤从而形成所需要的半导体器件的电子电路。特别的,多重掩膜和等离子刻蚀步骤可被用于在半导体基材上的电介质层内形成一凹陷区域图形,用作互连结构的沟道和通孔。为了除去刻蚀后留在沟道和通孔内的颗粒和污染物或光刻胶灰,就需要一个湿清洁步骤。尤其是当器件制造水平进步到65纳米尺寸或更小的时候,沟道和通孔的侧壁损伤对维持关键尺寸是至关重要的。为了减少或消除侧壁损伤,重要的是使用温和的、经稀释的化学物质,或有时仅仅使用去离子的基材。然而,经稀释的化学物质或去离子的基材通常对去除沟道和通孔内的颗粒不是很有效。因此需要使用类似超声波和兆声波这样的机械力来有效地去处颗粒。超声波和兆声波可把机械力施加到诸如沟道和通孔的基材结构中,功率强度和功率分配是控制机械力处于破坏限度之内同时有效去除颗粒的关键参数。To form interconnection elements, the semiconductor substrate may undergo the following operations: eg, masking, etching and deposition steps to form the desired electronic circuitry of the semiconductor device. In particular, multiple masking and plasma etching steps can be used to form a pattern of recessed regions within a dielectric layer on a semiconductor substrate for use as trenches and vias for interconnect structures. To remove particles and contaminants or photoresist dust left in the trenches and vias after etch, a wet cleaning step is required. Especially as device fabrication levels advance to 65nm dimensions or smaller, channel and via sidewall damage is critical to maintaining critical dimensions. To reduce or eliminate sidewall damage, it is important to use mild, diluted chemicals, or sometimes just deionized substrates. However, diluted chemistries or deionized substrates are generally not very effective at removing particles within channels and vias. Hence the need to use mechanical forces like ultrasonic and megasonic waves to effectively remove particles. Ultrasonic and megasonic waves can apply mechanical forces to substrate structures such as channels and vias, and power intensity and power distribution are key parameters to control mechanical forces within destructive limits while effectively removing particles.
用兆声波能量结合喷嘴清洁半导体基材已经在US 4,326,553中被揭示。流体被加压同时通过一兆声波换能器把兆声波能量施加到流体中。喷嘴的形状用于提供以兆声波频率振动的带状喷射清洁液并撞击在表面上。Cleaning semiconductor substrates with megasonic energy in combination with nozzles has been disclosed in US 4,326,553. The fluid is pressurized while megasonic energy is applied to the fluid through a megasonic transducer. The nozzle is shaped to deliver a ribbon-like spray of cleaning fluid that vibrates at megasonic frequencies and impinges on the surface.
US 6,039,059中揭示了一能量源振动一长型的探针,所述探针将声波能量发送到流体中。在一种设计中,流体被喷射到基材的两个表面,而探针位于接近基材的上表面的位置。在另一种设计中,一短探针的端面位于接近基材表面的位置,当基材旋转的时候,该探针在基材表面上移动。US 6,039,059 discloses an energy source vibrating an elongated probe that sends acoustic energy into the fluid. In one design, the fluid is sprayed onto both surfaces of the substrate with the probe positioned proximate to the upper surface of the substrate. In another design, the end face of a short probe is located close to the surface of the substrate, and the probe moves over the surface of the substrate as the substrate rotates.
US 6,843,257B2揭示了一能量源振动一杆,该杆绕着与基材表面平行的轴旋转。该杆的表面刻蚀有弯曲的槽,例如螺旋槽。需要一种更好的清洁方法,可高效且低机械损害地清洁在基材表面或基材上的颗粒和污染物。US 6,843,257 B2 discloses an energy source vibrating a rod which rotates about an axis parallel to the substrate surface. The surface of the rod is etched with curved grooves, such as spiral grooves. There is a need for a better cleaning method that efficiently and with low mechanical damage removes particles and contaminants from or on substrate surfaces.
发明内容 Contents of the invention
本发明的一实施例揭示了位于接近基材表面的板。所述板可平行于基材表面移动。所述板围绕着垂直于基材或基地表面的轴旋转。One embodiment of the present invention discloses a plate located close to the surface of the substrate. The plates are movable parallel to the surface of the substrate. The plate rotates about an axis perpendicular to the surface of the substrate or foundation.
本发明的另一实施例揭示了由超声波或兆声波换能器振动的板。所述板可平行于基材表面移动。所述板围绕着垂直于基材或基地表面的轴旋转。Another embodiment of the invention discloses a plate vibrated by an ultrasonic or megasonic transducer. The plates are movable parallel to the surface of the substrate. The plate rotates about an axis perpendicular to the surface of the substrate or foundation.
本发明的另一实施例揭示了由超声波或兆声波换能器振动的板。该板的面向基材表面的旋转表面具有凹槽、规则图形或者不规则图形,以提高清洁效率。所述板可平行于基材表面移动。所述板围绕着垂直于基材或基地表面的轴旋转。Another embodiment of the invention discloses a plate vibrated by an ultrasonic or megasonic transducer. The rotating surface of the plate facing the substrate surface has grooves, regular patterns or irregular patterns to improve cleaning efficiency. The plates are movable parallel to the surface of the substrate. The plate rotates about an axis perpendicular to the surface of the substrate or foundation.
本发明的另一实施例揭示了由超声波或兆声波换能器振动的板。该旋转板具有可将清洁性化学物质或去离子水传送到基材表面上的孔。所述板可平行于基材表面移动。所述板围绕着垂直于基材或基地表面的轴旋转。Another embodiment of the invention discloses a plate vibrated by an ultrasonic or megasonic transducer. The rotating plate has holes that deliver cleaning chemicals or deionized water to the surface of the substrate. The plates are movable parallel to the surface of the substrate. The plate rotates about an axis perpendicular to the surface of the substrate or foundation.
附图简述Brief description of the drawings
图1A-B描述了基材清洁设备的一示例实施例;1A-B depict an example embodiment of a substrate cleaning apparatus;
图2A-D描述了基材清洁步骤地一示例实施例;2A-D depict an example embodiment of a substrate cleaning step;
图3描述了基材清洁设备的另一示例实施例;Figure 3 depicts another example embodiment of a substrate cleaning apparatus;
图4描述了基材清洁设备的另一示例实施例;Figure 4 depicts another example embodiment of a substrate cleaning apparatus;
图5A-5B描述了基材清洁设备的另一示例实施例;5A-5B depict another example embodiment of a substrate cleaning apparatus;
图6A-6B描述了基材清洁设备的另一示例实施例;6A-6B depict another example embodiment of a substrate cleaning apparatus;
图7A-7B描述了基材清洁设备的另一示例实施例;7A-7B depict another example embodiment of a substrate cleaning apparatus;
图8A-8B描述了基材清洁设备的另一示例实施例;8A-8B depict another example embodiment of a substrate cleaning apparatus;
图9A-9B描述了基材清洁设备的另一示例实施例;9A-9B depict another example embodiment of a substrate cleaning apparatus;
图10A-10B描述了基材清洁设备的另一示例实施例;10A-10B depict another example embodiment of a substrate cleaning apparatus;
图11A-11B描述了基材清洁设备的另一示例实施例;11A-11B depict another example embodiment of a substrate cleaning apparatus;
图12A-12B描述了基材清洁设备的另一示例实施例;12A-12B depict another example embodiment of a substrate cleaning apparatus;
图13A-13B描述了基材清洁设备的另一示例实施例;13A-13B depict another example embodiment of a substrate cleaning apparatus;
图14A-14B描述了基材清洁设备的另一示例实施例;14A-14B depict another example embodiment of a substrate cleaning apparatus;
图15A-15B描述了基材清洁设备的另一示例实施例;15A-15B depict another example embodiment of a substrate cleaning apparatus;
图16A-16B描述了基材清洁设备的另一示例实施例;16A-16B depict another example embodiment of a substrate cleaning apparatus;
图17A-17B描述了基材清洁设备的另一示例实施例;17A-17B depict another example embodiment of a substrate cleaning apparatus;
图18A-18B描述了基材清洁设备的另一示例实施例;18A-18B depict another example embodiment of a substrate cleaning apparatus;
图19A-19B描述了基材清洁设备的另一示例实施例;19A-19B depict another example embodiment of a substrate cleaning apparatus;
图20A-20B描述了基材清洁设备的另一示例实施例;20A-20B depict another example embodiment of a substrate cleaning apparatus;
图21A-21B描述了基材清洁设备的另一示例实施例;21A-21B depict another example embodiment of a substrate cleaning apparatus;
图22A-22B描述了基材清洁设备的另一示例实施例;22A-22B depict another example embodiment of a substrate cleaning apparatus;
图23A-23D描述了基材清洁设备的另一示例实施例;23A-23D depict another example embodiment of a substrate cleaning apparatus;
图24A-24C描述了基材清洁设备的另一示例实施例;24A-24C depict another example embodiment of a substrate cleaning apparatus;
图25A-25B描述了基材清洁设备的另一示例实施例;25A-25B depict another example embodiment of a substrate cleaning apparatus;
图26描述了基材清洁设备的另一示例实施例;Figure 26 depicts another example embodiment of a substrate cleaning apparatus;
图27描述了基材清洁设备的另一示例实施例;Figure 27 depicts another example embodiment of a substrate cleaning apparatus;
图28描述了基材清洁设备的另一示例实施例;Figure 28 depicts another example embodiment of a substrate cleaning apparatus;
图29描述了基材清洁设备的另一示例实施例;Figure 29 depicts another example embodiment of a substrate cleaning apparatus;
图30描述了基材清洁设备的另一示例实施例;Figure 30 depicts another example embodiment of a substrate cleaning apparatus;
图31描述了基材清洁设备的另一示例实施例;Figure 31 depicts another example embodiment of a substrate cleaning apparatus;
图32描述了本发明所能产生的完整且等效清洁效果的情形;Fig. 32 has described the situation of complete and equivalent cleaning effect that the present invention can produce;
图33描述了本发明中一示例算法;Figure 33 depicts an example algorithm in the present invention;
图34描述了本发明的一体系控制系统;Figure 34 has described a system control system of the present invention;
表35描述了一使用本发明的示例算法计算基材旋转速度的结果的实例;Table 35 depicts an example of the results of calculating substrate rotation speed using the exemplary algorithm of the present invention;
表36描述了一使用本发明的示例算法计算板旋转速度的结果的实例;Table 36 describes an example of the results of calculating plate rotation speed using the example algorithm of the present invention;
表37描述了一使用本发明的示例算法计算板旋转速度的结果的实例。Table 37 depicts an example of the results of calculating plate rotation speed using the example algorithm of the present invention.
图38描述了基材清洁设备的另一示例实施例。Figure 38 depicts another example embodiment of a substrate cleaning apparatus.
详细描述A detailed description
根据一个示例实施例,图1A-1C示出了使用一旋转板的基材清洁设备的细节。该清洁设备包括基材1010、由旋转驱动机构1004驱动的板1008、以及分发清洁化学物质或去离子水1032的喷嘴1012。板1008平行于基材1010的表面并沿着平行于基材1010表面的方向移动。旋转板将使得在旋转板1008和基材1010之间的流体旋转,以提高清洁效率。旋转板1008和基材1010之间的间隔的宽度范围在0.1毫米和10毫米之间,较佳的为2毫米。图2A-2E将作详细描述。在清洁过程中,基材1010可以旋转速度1绕着基材中心旋转,同时板1004以速度2旋转。板1008能以恒速或变速横向移动,当旋转板1008移动到基材中心的位置,横向移动速度设置成高速,当旋转板1008移动到基材边缘时,横向移动速度设置成低速。基材1010的旋转速度1可是恒速或变速,当旋转板移动到基材中心位置,旋转速度1设置成高速而旋转板移动到基材边缘时,旋转速度1设置成低速。Figures 1A-1C illustrate details of a substrate cleaning apparatus using a rotating plate, according to an example embodiment. The cleaning apparatus includes a
图2A-2E显示出在清洁过程中清洁性化学物质或流体1302的流动状况。如图2A所示,当基材的同一点从A移动到E的时候,经过基材2008的同一点的流体的方向从A到B、C、D和E,例如:从180度到0度。同样的,当基材的相同点从E到A,经过基材2008的同一点的流体的方向从E到F、G、H和A,例如:从0度到180度。图2B显示出颗粒2044位于沟道2040和通孔2042内。当流体方向如图2C-2E所示的那样发生变化,在沟道和通孔内的颗粒将有效地被去除。2A-2E illustrate the flow of cleaning chemicals or fluid 1302 during the cleaning process. As shown in Figure 2A, when the same point of the substrate moves from A to E, the direction of the fluid passing through the same point of the substrate 2008 is from A to B, C, D and E, for example: from 180 degrees to 0 degrees . Similarly, when the same point of the substrate is from E to A, the direction of the fluid passing through the same point of the substrate 2008 is from E to F, G, H and A, for example: from 0° to 180°. FIG. 2B shows
用于去除颗粒和污染物的化学物质的一个例子,如下所示:An example of a chemical used to remove particles and pollutants is as follows:
有机物去除剂:H2SO4∶H2O2=4∶1;Organic matter remover: H2SO4:H2O2=4:1;
颗粒减少剂:NH4OH∶H2O2∶H2O=1∶1∶5;Particle reducer: NH4OH: H2O2: H2O=1:1:5;
金属污染物去除剂:Hcl∶H2O2∶H2O=1∶1∶6;Metal pollutant remover: Hcl: H2O2: H2O=1:1:6;
氧化物去除剂∶HF∶H2O=1∶100。Oxide remover: HF: H2O = 1:100.
图3示出基材清洁设备的另一个实施例,其根据本发明使用一旋转板。该实施例与在图1A和1B中所显示的例子相似,只是基材3010固定在可横向移动的基座3020上,并且一超声波或兆声波换能器3006连接在旋转盘3008上方。基座3020可使用驱动机构3022驱动旋转,并可通过移动机构3026和导向器3024横向移动。导向器3024可直线导向或曲线导向。超声波或兆声波设备被用于产生机械振动能量,能量通过旋转板3008和化学流体3032被传送到基材表面。因为换能器3006在清洁过程中处于旋转状态,换能器3006需要电刷输入和输出电流以驱动换能器。换能器的频率根据需要被清除的颗粒可设置成超声波和兆声波的范围。颗粒越大所使用的频率就应该越低。超声波的频率范围从20k赫兹到200k赫兹,而兆声波的频率范围从200k赫兹到10M赫兹。为了在同一个基材或基材上清洁不同尺寸的颗粒,机械波的频率可选择为依次使用各个频率或者同时使用这些频率。Figure 3 shows another embodiment of a substrate cleaning apparatus using a rotating plate in accordance with the present invention. This embodiment is similar to the example shown in FIGS. 1A and 1B except that the
图4示出使用一旋转板的基材清洁设备的另一个实施例。所述的实施例与图1A和图1B中的相似,只是旋转板4008不完全与基材表面平行,而是有一个角度,角度范围在0-15度。Figure 4 shows another embodiment of a substrate cleaning apparatus using a rotating plate. The described embodiment is similar to that in FIGS. 1A and 1B , except that the
图5A-5B示出根据本发明的旋转板,以及超声波和兆声波设备的实施例。在图1A和图3中所描述到的板是一个平面。然而,如图5A和5B所显示的,旋转板可以是多个半圆柱形。如图5A所示,由半柱体表面所传送的机械波从不同的角度分散。这种分散的机械波能够更有效地分离沟道壁和通孔壁上的颗粒。当板5008旋转的时候在旋转板5008上的半柱体改变指向角度,因此机械波模式的方向旋转一周会改变360度,这样就能够提高清洁效率并使用更少的超声波或兆声波能量,同时也减小对器件结构的损坏。同时,多个半柱体将进一步地提高化学流体1032螺旋方向上的移动,这就使得通过基材1010表面的流体表面速度提高。总的来说,本发明在清洁过程中创造了3个效果:Figures 5A-5B illustrate rotating plates, and embodiments of ultrasonic and megasonic devices according to the present invention. The plate depicted in Figures 1A and 3 is a plane. However, as shown in Figures 5A and 5B, the rotating plate may be a plurality of semi-cylindrical shapes. As shown in Fig. 5A, the mechanical waves transmitted by the surface of the half-cylindrical disperse from different angles. This dispersed mechanical wave can more effectively separate the particles on the channel walls and via walls. When the
1)在旋转盘5008上的半柱体结构提供分散的超声波或兆声波;1) The semi-cylindrical structure on the
2)这种分散的机械波模式进一步地围绕着旋转板5008的旋转轴旋转;2) This dispersed mechanical wave mode further rotates around the rotation axis of the
3)流体绕着旋转板5008的旋转轴移动。3) The fluid moves around the rotation axis of the
图6A-6B示出根据本发明使用一旋转板的基材清洁设备的另一实施例。所述的实施例与图5A和图5B中的相似,只是在旋转板6008上的柱体是椭圆形柱体而不是半圆形柱体。6A-6B illustrate another embodiment of a substrate cleaning apparatus using a rotating plate according to the present invention. The described embodiment is similar to that in Figures 5A and 5B, except that the cylinders on the
图7A和7B示出根据本发明使用一旋转板的基材清洁设备的另一个实施例。所述实施例与图5A和图5B中的实例相似,只是在旋转板7008上的柱体是小半柱体而不是半圆形柱体。7A and 7B illustrate another embodiment of a substrate cleaning apparatus using a rotating plate according to the present invention. The embodiment is similar to the example in Figures 5A and 5B, except that the cylinders on the
图8A和8B示出根据本发明使用一旋转板的基材清洁设备的另一实施例。所述实施例与图5A和图5B中的实例相似,只是在旋转板8008上的柱体是三角形柱体而不是半圆形柱体。8A and 8B illustrate another embodiment of a substrate cleaning apparatus using a rotating plate according to the present invention. The embodiment is similar to the example in Figures 5A and 5B, except that the posts on the
图9A和9B示出根据本发明使用一旋转板的基材清洁设备的另一实施例。所述实施例与图5A和图5B中的实例相似,只是在旋转板8008上的柱体是梯形柱体而不是半圆形柱体。9A and 9B illustrate another embodiment of a substrate cleaning apparatus using a rotating plate according to the present invention. The embodiment is similar to the example in Figures 5A and 5B, except that the posts on the
图10A和10B示出了根据本发明使用一旋转板的基材清洁设备的另一实施例。所述实施例与图5A和图5B中的实例相似,只是在旋转板10008上的柱体是长方形柱体而不是半圆形柱体。10A and 10B illustrate another embodiment of a substrate cleaning apparatus using a rotating plate according to the present invention. The embodiment is similar to the example in Figures 5A and 5B, except that the posts on the
图11A和11B示出了根据本发明使用一旋转板的基材清洁设备的另一实施例。所述实施例与图5A和图5B中的实例相似,只是在旋转板11008上的柱体是六角形柱体而不是半圆形柱体。11A and 11B illustrate another embodiment of a substrate cleaning apparatus using a rotating plate according to the present invention. The embodiment is similar to the example in Figures 5A and 5B, except that the posts on the
图12A和12B示出了根据本发明使用一旋转板的基材清洁设备的另一实施例。所述实施例与图5A和图5B中的实例相似,只是在旋转板12008上的柱体是半八边形柱体而不是半圆形柱体。12A and 12B illustrate another embodiment of a substrate cleaning apparatus using a rotating plate according to the present invention. The embodiment is similar to the example in Figures 5A and 5B, except that the posts on the
图13A和13B示出了根据本发明使用一旋转板的基材清洁设备的另一实施例。所述实施例与图5A和图5B中的实例相似,只是在旋转板13008上的柱体是鞍形柱体而不是半圆形柱体。13A and 13B illustrate another embodiment of a substrate cleaning apparatus using a rotating plate according to the present invention. The embodiment is similar to the example in Figures 5A and 5B, except that the posts on the
图14A和14B示出了根据本发明使用一旋转板的基材清洁设备的另一实施例。所述实施例与图5A和图5B中的实例相似,只是在旋转板上图形是独立半球体而不是凹凸的半柱体。14A and 14B illustrate another embodiment of a substrate cleaning apparatus using a rotating plate according to the present invention. The embodiment is similar to the example in Fig. 5A and Fig. 5B, except that the graphics on the rotating plate are independent hemispheres instead of concave-convex half cylinders.
图15A和15B示出了根据本发明使用一旋转板的基材清洁设备的另一实施例。所述实施例与图14A和图14B中的实例相似,只是在旋转板上图形是的独立锥形而不是独立半球体。15A and 15B illustrate another embodiment of a substrate cleaning apparatus using a rotating plate according to the present invention. The described embodiment is similar to the example in Figures 14A and 14B, except that the figures on the rotating plate are individual cones rather than individual hemispheres.
图16A和16B示出了根据本发明使用一旋转板的基材清洁设备的另一实施例。所述实施例与图14A和图14B中的实例相似,只是在旋转板上图形是独立半锥形而不是独立半球体。16A and 16B illustrate another embodiment of a substrate cleaning apparatus using a rotating plate according to the present invention. The described embodiment is similar to the example in Figures 14A and 14B, except that the figures on the rotating plate are individual semi-cones instead of individual hemispheres.
图17A和17B示出了根据本发明使用一旋转板的基材清洁设备的另一实施例。在旋转板17008上的图形是单凸柱体。17A and 17B illustrate another embodiment of a substrate cleaning apparatus using a rotating plate according to the present invention. The figure on the rotating plate 17008 is a single convex cylinder.
图18A和18B示出了根据本发明使用一旋转板的基材清洁设备的另一实施例。在旋转板18008上的图形是单凹柱体。18A and 18B illustrate another embodiment of a substrate cleaning apparatus using a rotating plate according to the present invention. The figure on the rotating plate 18008 is a single concave cylinder.
图19A和19B示出了根据本发明使用一旋转板的基材清洁设备的另一实施例。在旋转板19008上的图形是一个单凸柱体和一个单凹柱体。19A and 19B illustrate another embodiment of a substrate cleaning apparatus using a rotating plate according to the present invention. The figures on the rotating plate 19008 are a single convex cylinder and a single concave cylinder.
图20A和20B示出了根据本发明使用一旋转板的基材清洁设备的另一实施例。它包括旋转板20008、固定的超声波或兆声波换能器20006、和驱动旋转板20008的驱动机构20004。在换能器20006上有孔20030用于引入化学流体或去离子水20032。所述的化学流体或去离子水20032通过在旋转板20008和换能器20006之间的间隔流出,而抵达下方的基材表面。超声波或兆声波能量通过化学流体20032、旋转板20008和化学流体1032从换能器20006传送到基材1010的表面。这一实施例的优势是换能器20006是固定的,因此不需要用电刷引入或输出电流来驱动换能器20006。旋转板20032上的图形由多个半柱体形成。20A and 20B illustrate another embodiment of a substrate cleaning apparatus using a rotating plate according to the present invention. It includes a
图21A和21B示出了根据本发明使用基材清洁设备的另一个实施例。所示的实施例与图20A和图20B中的例子相似,只是在旋转盘21008上的半圆形柱体上也输送有通孔21009。通孔21009的功能是用于将化学流体21032引入到下方的基材表面。21A and 21B illustrate another embodiment of a substrate cleaning apparatus using the present invention. The illustrated embodiment is similar to the example in FIGS. 20A and 20B , except that through
图22A和22B显示出根据本发明使用基材清洁设备的另一个实施例。所示的实施例与图20A和图20B中的例子相似,只是在旋转盘22008上在半圆形柱体之间的凹槽上也输送有通孔22009。通孔22009的功能是用于将化学流体22032引入到下方的基材表面。Figures 22A and 22B illustrate another embodiment of a substrate cleaning apparatus used in accordance with the present invention. The embodiment shown is similar to the example in FIGS. 20A and 20B , except that through holes 22009 are also delivered on the
上述实施例中所显示的旋转板的形状是圆形的。然而,如图23A所显示的,旋转板的轮廓可以是三角形的,或者也可如图23B所示是方形的,或者如图23C所示是八角形的,或者如图23D所示是椭圆形的。The shape of the rotating plate shown in the above embodiments is circular. However, the profile of the rotating plate may be triangular as shown in Figure 23A, or square as shown in Figure 23B, or octagonal as shown in Figure 23C, or oval as shown in Figure 23D of.
图24A和图24C示出了根据本发明使用一旋转板的基材清洁设备的另一个实施例。它包括旋转板24008、固定的超声波或兆声波换能器24006、驱动旋转板24008的驱动机构24004、横向移动的导向器24002、横向驱动机构24000和用于分发化学流体的喷嘴24012。换能器24006和旋转板24008由横向驱动机构24000驱动横向来回穿过基材24010的中心,如图24B所显示。或者如图24C所示,由横向驱动机构24000驱动在距离基材24010的中心偏移H的轨迹上来回移动。24A and 24C illustrate another embodiment of a substrate cleaning apparatus using a rotating plate according to the present invention. It includes a
图25A和图25B示出了根据本发明使用一旋转板的基材清洁设备的另一实施例。它包括旋转板25008、固定的超声波或兆声波换能器25006、驱动旋转板25008的驱动机构25004、摆动移动条25014、摆动驱动机构25016、以及用于分发化学流体的喷嘴25012。如图25B所示,换能器25006和旋转板25008被摆动驱动机构25016所驱动左右摆动地通过基材25010的中心。或者如图25C所示的,被摆动驱动机构25016所驱动在距离基材25010的中心H的弯曲轨迹上左右摆动。喷嘴25012设置在摆动条25014上,因此喷嘴与换能器25006一起摆动。通过这中布置,化学物质就能够持续地被输送到在旋转板25008和基材之间的间隔之中,即使旋转板25008是在左右摆动。25A and 25B illustrate another embodiment of a substrate cleaning apparatus using a rotating plate according to the present invention. It includes a rotating plate 25008, a fixed ultrasonic or
图26示出了根据本发明使用一旋转板的基材清洁设备的另一实施例。所述实施例与图24A到24C以及图25A到25B中的例子相似,只是基材26010和旋转板26008在垂直方向上配置。Figure 26 shows another embodiment of a substrate cleaning apparatus using a rotating plate according to the present invention. The embodiment is similar to the examples in Figures 24A to 24C and Figures 25A to 25B, except that the
图27示出了根据本发明使用一旋转板的基材清洁设备的另一实施例。所述实施例与图26中所显示的那些例子相似,只是两组清洁设备同时位于基材的正面和背面。Figure 27 shows another embodiment of a substrate cleaning apparatus using a rotating plate according to the present invention. The embodiments are similar to those shown in Figure 26, except that two sets of cleaning devices are located on both the front and back sides of the substrate.
图28示出了根据本发明使用一旋转板的基材清洁设备的另一实施例。所述实施例与图26中所显示的那些例子相似,只是基材28010和清洁驱动设备之间有一个角度。该角度在90-180度之间。Figure 28 shows another embodiment of a substrate cleaning apparatus using a rotating plate according to the present invention. The embodiments are similar to those shown in Figure 26, except that there is an angle between the
图29示出了根据本发明使用一旋转板的基材清洁设备的另一实施例。所述实施例与图27中所显示的那些例子相似,只是基材29010和清洁驱动设备之间有一个角度。该角度在0-90度之间。Figure 29 shows another embodiment of a substrate cleaning apparatus using a rotating plate according to the present invention. The embodiments are similar to those shown in Figure 27, except that there is an angle between the
图30示出了根据本发明使用一旋转板的基材清洁设备的另一实施例。所述实施例与图24中所显示的那些例子相似,只是旋转板30008和换能器30006放置在基材30010的背面。Figure 30 shows another embodiment of a substrate cleaning apparatus using a rotating plate according to the present invention. The embodiments are similar to those shown in FIG. 24 , except that the
图31示出了根据本发明使用一旋转板的基材清洁设备的另一实施例。所述实施例与图30中所显示的那些例子相似,只是一组额外的旋转板31008和换能器30006被放置在基材31010的正面。Figure 31 shows another embodiment of a substrate cleaning apparatus using a rotating plate according to the present invention. The embodiments are similar to those shown in FIG. 30 except that an additional set of rotating
图32描述了本发明所能产生的完整且等效清洁效果的情形。A是在某个特定的时刻t,在板移动方向上震动板的前缘与基材的重叠点,O是板的中心,X是点A到基材或需要被清洁的物品之间的距离,θ是板上凹槽和基材或物品的直径之间的角度。Figure 32 depicts a situation where a complete and equivalent cleaning effect can be produced by the present invention. A is the overlapping point of the front edge of the vibrating plate and the substrate in the direction of plate movement at a specific time t, O is the center of the plate, and X is the distance from point A to the substrate or the item to be cleaned , θ is the angle between the groove on the plate and the diameter of the substrate or article.
为了确保在基材或其他物品上的所有点都能被板所清洁,当基材或物品旋转一周的时候,板沿着基材或物品的直径移动的距离应该小于板自身的直径。因此可以导出板沿着基材或物品的直径的最大平移速度(横向速度)是:To ensure that all points on a substrate or other item can be cleaned by the plate, the distance the plate moves along the diameter of the substrate or item should be less than the diameter of the plate itself when the substrate or item makes one revolution. It can thus be derived that the maximum translational velocity (transverse velocity) of the plate along the diameter of the substrate or article is:
为了确保上面所定义的完整清洁的效果,在本发明中,对基材或物品上的一小块区域感兴趣时,当该块区域处于板的范围之内时,所述的振动板至少旋转π。也可以说,当板旋转过π时,图32中的在A和O之间的距离d肯定小于板的半径。In order to ensure the complete cleaning effect as defined above, in the present invention, when a small area on the substrate or object is of interest, when the area is within the range of the plate, the vibrating plate is rotated at least π. It can also be said that the distance d between A and O in Fig. 32 must be smaller than the radius of the plate when the plate is rotated through π.
因此可以发现下述条件需要被满足:It can thus be found that the following conditions need to be met:
图33示出了在上面所描述的算法运用到一组输入中的一个例子。所述的算法计算了在x轴和部分x轴下方经计算的曲线之间的操作空间,其中在输入参数的基础上能实现完整的清洁效果,如被红圆圈点注明的部分。Figure 33 shows an example of the algorithm described above applied to a set of inputs. The algorithm calculates the operating space between the calculated curves on the x-axis and the portion below the x-axis where a complete cleaning effect can be achieved based on the input parameters, as indicated by the red circled dots.
图34显示了一体系控制系统,其将通过系统软件实现,所述软件允许所述算法核对并推荐用户输入并对用户提供反馈。Figure 34 shows an architectural control system that will be implemented by system software that allows the algorithm to collate and recommend user input and provide feedback to the user.
表35描述了一使用本发明的示例算法计算基材旋转速度的结果的实例。作为板中心位置相对于空间的一个函数,其满足了在固定的板旋转速度和可变板平移速度的情况下的等效的清洁效果。Table 35 depicts an example of the results of calculating substrate rotation speed using the exemplary algorithm of the present invention. As a function of the position of the center of the plate relative to the space, it satisfies an equivalent cleaning effect with a fixed plate rotation speed and a variable plate translation speed.
表36描述了一使用本发明的示例算法计算板旋转速度的结果的实例。作为板中心位置相对于空间的一个函数其满足了在基材旋转速度和板的平移速度都固定的情况下的等效的清洁效果。Table 36 describes an example of the results of calculating plate rotation speed using the example algorithm of the present invention. This satisfies an equivalent cleaning effect with both substrate rotation speed and plate translation speed fixed as a function of plate center position relative to space.
表37描述了一使用本发明的示例算法计算板旋转速度的结果的实例。Table 37 depicts an example of the results of calculating plate rotation speed using the example algorithm of the present invention.
作为板中心位置相对于空间的一个函数,其满足了完整清洁的效果。As a function of the position of the center of the plate relative to the space, it satisfies the effect of complete cleaning.
图38揭示了使用旋转板的基材清洁设备的另一个实施例。该实施例与在图4A和4B中示出的实施例相类似,除了该超声波或兆声波换能器38006是呈一角度α而放置在一旋转板38008上,该旋转板38008的底面是与基材的表面平行,而该角度α是指与基材的表面的法线之间的夹角。该角度α是在0到60度之间。Figure 38 discloses another embodiment of a substrate cleaning apparatus using a rotating plate. This embodiment is similar to that shown in Figures 4A and 4B, except that the ultrasonic or
尽管,本发明通过根据某些实施例、例子和应用得到描述,对熟悉本领域的技术人员来说,可对本发明进行各种修改和改变而不背离本发明。例如:氢氟酸可以与其他的盐和酸结合形成电解质从而达到相同的目的。Although the present invention has been described in terms of certain embodiments, examples and applications, various modifications and changes will be apparent to those skilled in the art without departing from the invention. For example: hydrofluoric acid can be combined with other salts and acids to form electrolytes to achieve the same purpose.
Claims (44)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200810034827A CN101540269B (en) | 2008-03-20 | 2008-03-20 | Method and device for cleaning semiconductor chip |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200810034827A CN101540269B (en) | 2008-03-20 | 2008-03-20 | Method and device for cleaning semiconductor chip |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101540269A CN101540269A (en) | 2009-09-23 |
CN101540269B true CN101540269B (en) | 2012-10-10 |
Family
ID=41123388
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200810034827A Expired - Fee Related CN101540269B (en) | 2008-03-20 | 2008-03-20 | Method and device for cleaning semiconductor chip |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101540269B (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101884986A (en) * | 2010-07-16 | 2010-11-17 | 上海集成电路研发中心有限公司 | Semiconductor apparatus cleaning device and method |
CN103736690B (en) * | 2013-12-31 | 2018-12-18 | 上海集成电路研发中心有限公司 | silicon wafer cleaning method |
CN106040627A (en) * | 2015-04-17 | 2016-10-26 | 光全球半导体有限公司 | Wafer cleaning method and wafer cleaning device used therein |
CN105957822B (en) * | 2016-06-22 | 2018-09-21 | 贵州雅光电子科技股份有限公司 | A kind of diode automatic cleaning system and cleaning method |
CN106098593A (en) * | 2016-06-22 | 2016-11-09 | 贵州雅光电子科技股份有限公司 | A kind of automatic cleaning control system of diode and control method |
CN114054429B (en) * | 2022-01-11 | 2022-04-01 | 北京东方金荣超声电器有限公司 | Megasonic cleaning system for large-size wafer |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1088337A1 (en) * | 1999-03-30 | 2001-04-04 | Koninklijke Philips Electronics N.V. | Semiconductor wafer cleaning apparatus and method |
CN1675150A (en) * | 2002-08-22 | 2005-09-28 | 纳幕尔杜邦公司 | Process for the preparation of 1,1,1,2,2-pentafluoroethane |
-
2008
- 2008-03-20 CN CN200810034827A patent/CN101540269B/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1088337A1 (en) * | 1999-03-30 | 2001-04-04 | Koninklijke Philips Electronics N.V. | Semiconductor wafer cleaning apparatus and method |
CN1675150A (en) * | 2002-08-22 | 2005-09-28 | 纳幕尔杜邦公司 | Process for the preparation of 1,1,1,2,2-pentafluoroethane |
Also Published As
Publication number | Publication date |
---|---|
CN101540269A (en) | 2009-09-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9281177B2 (en) | Methods and apparatus for cleaning semiconductor wafers | |
CN101540269B (en) | Method and device for cleaning semiconductor chip | |
JP2010532556A5 (en) | ||
CN101879511B (en) | Method and device for cleaning semiconductor silicon wafer | |
US9633833B2 (en) | Methods and apparatus for cleaning semiconductor wafers | |
US10020208B2 (en) | Methods and apparatus for cleaning semiconductor wafers | |
CN101927242B (en) | Method and device for cleaning semiconductor silicon wafer | |
JP4255459B2 (en) | Substrate cleaning apparatus and substrate cleaning method | |
US11081334B2 (en) | Particle prevention in wafer edge trimming | |
CN101516533A (en) | Cleaning apparatus using ultrasonic waves | |
TWI771501B (en) | Substrate cleaning device | |
CN112371645B (en) | Acoustic wave cleaning device and wafer cleaning equipment | |
JP2001334221A (en) | Substrate cleaning apparatus | |
CN102327883A (en) | Megasonic cleaning head and megasonic cleaning system provided with same | |
JP2004039843A (en) | Apparatus and method for cleaning substrate | |
CN117619816A (en) | Ultrasonic cleaning unit with improved cleaning performance and substrate cleaning equipment including the same | |
TW200849359A (en) | Methods and apparatus for cleaning semiconductor wafers | |
TW201827134A (en) | Apparatus for particle cleaning | |
CN114308798B (en) | Cleaning assembly | |
JP2008066401A (en) | Equipment and method for processing substrate | |
JP3753591B2 (en) | Substrate cleaning device | |
TWI483299B (en) | Semiconductor cymbal cleaning method and device | |
KR20200036151A (en) | Substrate cleaning apparatus and substrate cleaning method | |
CN110461484A (en) | Substrate cleaning device | |
KR20100047462A (en) | Substrate cleaning apparatus and method for cleaning the substrate using the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Method and device for cleaning semiconductor chip Effective date of registration: 20140523 Granted publication date: 20121010 Pledgee: Bank of Communications Ltd. Shanghai New District Branch Pledgor: ACM (SHANGHAI) Inc. Registration number: 2014310000027 |
|
PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20150521 Granted publication date: 20121010 Pledgee: Bank of Communications Ltd. Shanghai New District Branch Pledgor: ACM (SHANGHAI) Inc. Registration number: 2014310000027 |
|
PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
CP03 | Change of name, title or address |
Address after: 201203 building 4, No. 1690, Cailun Road, free trade zone, Pudong New Area, Shanghai Patentee after: Shengmei semiconductor equipment (Shanghai) Co.,Ltd. Address before: 201600, room 900, 210 steaming Road, Songjiang, Shanghai Patentee before: ACM (SHANGHAI) Inc. |
|
CP03 | Change of name, title or address | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121010 |
|
CF01 | Termination of patent right due to non-payment of annual fee |