CN101527305A - Active element array substrate - Google Patents
Active element array substrate Download PDFInfo
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- CN101527305A CN101527305A CN200810081742A CN200810081742A CN101527305A CN 101527305 A CN101527305 A CN 101527305A CN 200810081742 A CN200810081742 A CN 200810081742A CN 200810081742 A CN200810081742 A CN 200810081742A CN 101527305 A CN101527305 A CN 101527305A
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- 239000000758 substrate Substances 0.000 title claims abstract description 59
- 238000001514 detection method Methods 0.000 claims abstract description 35
- 230000002093 peripheral effect Effects 0.000 claims abstract 7
- 239000010409 thin film Substances 0.000 claims description 39
- 238000000034 method Methods 0.000 abstract description 6
- 238000005520 cutting process Methods 0.000 abstract description 4
- 238000009826 distribution Methods 0.000 description 76
- 238000010586 diagram Methods 0.000 description 16
- 238000012360 testing method Methods 0.000 description 12
- 238000013461 design Methods 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000003068 static effect Effects 0.000 description 6
- 230000002146 bilateral effect Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
本发明揭示一种有源元件阵列基板，具有显示区以及位于显示区外的周边电路区，其中周边电路区具有端子区以及位于端子区与显示区之间的额缘区。有源元件阵列基板包括像素阵列、多数条电极配线与检测装置。像素阵列配置于显示区内。多数条电极配线配置于周边电路区并电性连接至像素阵列。检测装置配置于额缘区，用以对有源元件阵列基板进行检测。由于在检测后不需额外的切裂制程以切除检测装置，所以可有效降低制程成本。
The present invention discloses an active element array substrate, which has a display area and a peripheral circuit area outside the display area, wherein the peripheral circuit area has a terminal area and a front edge area between the terminal area and the display area. The active element array substrate includes a pixel array, a plurality of electrode wirings and a detection device. The pixel array is arranged in the display area. The plurality of electrode wirings are arranged in the peripheral circuit area and electrically connected to the pixel array. The detection device is arranged in the front edge area to detect the active element array substrate. Since no additional cutting process is required to remove the detection device after the detection, the process cost can be effectively reduced.
Description
Technical field
The invention relates to a kind of array base palte and display floater, and particularly relevant for a kind of active elements array substrates with checkout gear.
Background technology
In many flat-panel screens, have that high image quality, space utilization efficient are good, Thin Film Transistor-LCD (the Thin Film Transistor Liquid CrystalDisplay of low consumpting power, advantageous characteristic such as radiationless, TFT LCD), become main flow in the field of display.Particularly, when the making of Thin Film Transistor-LCD, need test, to determine that the Thin Film Transistor-LCD that made comes out can normal operation its electrode distribution.
Figure 1A illustrates the schematic diagram into existing a kind of Thin Film Transistor-LCD.Please refer to Figure 1A, Thin Film Transistor-LCD 100 has viewing area 110 and periphery circuit region 120, wherein, disposes many electrode wirings 130 on the viewing area 110.Dispose a plurality of drive circuits 140 on the periphery circuit region 120, in order to drive electrode distribution 130.Short-circuit rods 150 (Shorting bar) is electrically coupled to electrode distribution 130.Utilize the extra short-circuit rods 150 that is provided with can be per two or per three electrode wirings 130 be electrically connected, with minimizing detector probe (not illustrating) quantity.And, to electrode distribution 130, can test Thin Film Transistor-LCD 100 by short-circuit rods 150 input signals.
But, after finishing test, need carry out all in addition and split processing procedure with 150 excisions of extra short-circuit rods as Thin Film Transistor-LCD 100 that Figure 1A illustrated.Therefore, will increase production required time and cost.
Figure 1B illustrates the schematic diagram into existing another kind of Thin Film Transistor-LCD.Please refer to Figure 1B, short-circuit rods 152 is to be disposed on the periphery circuit region 122 of Thin Film Transistor-LCD 102, and is electrically coupled to electrode distribution 132.Similarly,, can test to electrode distribution 132 by short-circuit rods 152 input signals Thin Film Transistor-LCD 102.
After the test of finishing Thin Film Transistor-LCD 102, also need to carry out again a laser ablation step, so that the short-circuit rods 152 and the electric connection of Thin Film Transistor-LCD 102 are cut off.Therefore, also cause the increase of production time-histories and manufacturing cost.
Split processing procedure or laser ablation step for avoiding increasing extra cutting, propose another kind of Thin Film Transistor-LCD in the prior art.Fig. 2 illustrates the schematic diagram into existing another Thin Film Transistor-LCD.Please refer to Fig. 2, this Thin Film Transistor-LCD 104 has viewing area 170 and periphery circuit region 170a.Checkout gear 160 is arranged among the periphery circuit region 170a, and is positioned at the subtend of gate driver circuit 172, or is positioned at the subtend of source electrode drive circuit 174.
In checkout gear 160, be provided with switch element 168.This switch element 168 is arranged on each scan wiring 162 and detects distribution 166 joints and each data wiring 164 and detect distribution 166 joints.When testing, switch element 168 is opened, so scan wiring 162 and data wiring 164 are with the detection distribution 166,166 ' that is electrically connected to respectively separately.After test is finished, switch element 168 is closed, and make scan wiring 162 and the data wiring 164 can driven.
Yet, can only be applicable to that in Thin Film Transistor-LCD 104 monolateral gate/source drives the design of (1G1S), and can not be applicable to that bilateral gate/source drives in the design of (2G2S).Though also checkout gear 160 can be arranged at the outside of gate driver circuit 172 or the outside of source electrode drive circuit 174, the area of whole periphery circuit region be increased, and cause the problem of panel compatibility not good (incompatible).
Summary of the invention
In view of this, the present invention proposes a kind of active elements array substrates, has checkout gear.After test, do not need extra cutting to split processing procedure, the area of periphery circuit region is increased, and have preferable panel compatibility.
For specifically describing content of the present invention, the present invention proposes a kind of active elements array substrates, this active elements array substrates has the viewing area and is positioned at periphery circuit region outside the viewing area, and wherein periphery circuit region has terminal region and the frontal border area between terminal region and viewing area.Active elements array substrates comprises pel array, most electrode wirings and checkout gear.Pixel array configuration is in the viewing area.Most electrode wirings are disposed at periphery circuit region and are electrically connected to pel array.Checkout gear is disposed at frontal border area, in order to active elements array substrates is detected.
In one embodiment of this invention, above-mentioned checkout gear comprises that most bars detect distribution, most bar switch wiring, a plurality of switch element and sense switch line.Detect distribution perpendicular to the electrode distribution, and the detection distribution is electrically connected to the electrode distribution respectively.Switch wiring is parallel to the electrode distribution, and each bar switch wiring is to be arranged between the two adjacent electrode wirings.Switch element is disposed at respectively on each switch wiring, and each detects distribution and each electrode distribution is to electrically connect by each switch element, and has an electrode tie point between each electrode distribution and each the detection distribution.The sense switch line electrically connects switch wiring, to carry out switch for switch element.
In one embodiment of this invention, above-mentioned electrode tie point for example is a contact hole, so that corresponding detection distribution electrically connects with corresponding electrode distribution by this contact hole.
In one embodiment of this invention, above-mentioned switch element comprises at least one thin-film transistor, and wherein thin-film transistor comprises grid, first source/drain electrode and second source/drain electrode.Grid is electrically connected to corresponding switch wiring, and first source/drain electrode is electrically connected to corresponding electrode distribution, and second source/drain electrode is electrically connected to corresponding detection distribution.
In one embodiment of this invention, above-mentioned switch element comprises thin-film transistor and diode, and wherein diode electrically is connected in and detects between distribution and the switch wiring.
In one embodiment of this invention, also comprise at least one short-circuit rods, this short-circuit rods is arranged in the periphery circuit region and electrically connects and detects distribution.
In one embodiment of this invention, above-mentioned electrode distribution for example is scan wiring or data wiring.
In one embodiment of this invention, above-mentioned active elements array substrates also comprises at least one driving weld pad, be connected with those electrode distributions, and this driving weld pad is suitable for transmitting the drive signal that one drive circuit provides.In addition, above-mentioned active elements array substrates also comprises at least one panel detection weld pad, is arranged at by this corresponding driving weld pad, and wherein, this panel detection weld pad that drive signal is identical is to be electrically connected.
In sum, active elements array substrates of the present invention is because of adopting checkout gear, and checkout gear is disposed in the frontal border area of periphery circuit region, and the area of panel periphery circuit region can not increased.And, also go in the design of bilateral gate/source driving.Simultaneously, because the switch element in the checkout gear is high impedance status (near an off state) when normal the demonstration, therefore also can omits and finish the step that the test back cuts off the electric connection of checkout gear and electrode wiring closet.Moreover, because switch element is to be configured in addition on the switch wiring that is independent of the electrode distribution, therefore when normal the demonstration, is in the signal that the switch element of closed condition can't hinder on the electrode distribution and transmits.And this active elements array substrates also has the electrostatic breakdown of preventing (electric static discharge, function ESD).
Description of drawings
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, below in conjunction with accompanying drawing the specific embodiment of the present invention is elaborated, wherein:
Figure 1A illustrates the schematic diagram into existing a kind of Thin Film Transistor-LCD.
Figure 1B illustrates the schematic diagram into existing another kind of Thin Film Transistor-LCD.
Fig. 2 illustrates the schematic diagram into existing another Thin Film Transistor-LCD.
Fig. 3 illustrates the schematic diagram into the active elements array substrates of first embodiment of the invention.
Fig. 4 illustrates the schematic diagram into the checkout gear of a preferred embodiment of the present invention.
Fig. 5 illustrates the schematic diagram into the active elements array substrates of second embodiment of the invention.
Fig. 6 illustrates the schematic diagram into the another kind of checkout gear of preferred embodiment of the present invention.
Fig. 7 illustrates the schematic diagram into a kind of display panels of preferred embodiment of the present invention.
The main element symbol description:
100,102,104: Thin Film Transistor-LCD
110,170,210: the viewing area
120,122,170a, 220: periphery circuit region
130,132,270: the electrode distribution
140: drive circuit
150,152: short-circuit rods
160,280,380: checkout gear
162: scan wiring
164: data wiring
166,166 ', 282: detect distribution
168,285: switch element
172: gate driver circuit
174: source electrode drive circuit
200,300,410: active elements array substrates
230: terminal region
240: frontal border area
250: pel array
260: drive weld pad
284: switch wiring
286: thin-film transistor
286a: grid
286b: first source/drain electrode
286c: second source/drain electrode
287: the sense switch line
288: diode
289: the electrode tie point
290: short-circuit rods
400: display panels
420: colored optical filtering substrates
430: liquid crystal layer
H: contact hole
P1, P2, P3: panel detection weld pad
Embodiment
Be example only below, embodiments of the present invention are described with the detection mode of monolateral source electrode drive circuit.Yet the present invention also can be applicable to the detection of monolateral gate driver circuit, and the inspection side of bilateral gate/source driving, and the present invention does not limit the set-up mode of drive circuit.
First embodiment
Fig. 3 illustrates the schematic diagram into the active elements array substrates of first embodiment of the invention.Present embodiment only illustrates the part of active elements array substrates 200, and is example with monolateral source drive.Please refer to Fig. 3, active elements array substrates 200 has viewing area 210 and is positioned at viewing area 210 periphery circuit region 220 outward, and wherein periphery circuit region 220 has terminal region 230 and the frontal border area 240 between terminal region 230 and viewing area 210.Active elements array substrates 200 comprises pel array 250, most electrode wirings 270 and checkout gear 280.In the present embodiment, active elements array substrates 200 also comprises at least one driving weld pad 260, wherein drive weld pad 260 and be connected with electrode distribution 270, and driving weld pad 260 is suitable for transmitting the drive signal that one drive circuit provides.
Please continue with reference to Fig. 3, pel array 250 is disposed in the viewing area 210, and drives the terminal region 230 that weld pad 260 is disposed at periphery circuit region 220.Most electrode wirings 270 are disposed at periphery circuit region 220 and are electrically connected to pel array 250, and electrode distribution 270 is driven by drive circuit via the approach that drives weld pad 260.Checkout gear 280 is disposed at frontal border area 240, and in order to active elements array substrates 200 is detected, wherein, electrode distribution 270 can be a scan wiring, or data wiring.
It should be noted that, be different from existing checkout gear 160 (illustrating) and can only be disposed at the gate driver circuit 172 or the subtend of source electrode drive circuit 174 as Fig. 2, present embodiment is arranged in the frontal border area 240 checkout gear 280, so the area of the periphery circuit region 220 of panel can not increase.And, can be applicable in the design that bilateral gate/source drives or in the design of the drive circuit of any kind of, and particularly applicable in the large scale liquid crystal display floater with bigger driving demand.In addition, owing to be the design that utilizes checkout gear 280, finish the step that the test back cuts off checkout gear 280 and the electric connection of 270 of electrode distributions so can omit, and then shorten production time-histories and saving cost with switch element 285 (being illustrated among Fig. 4).
Fig. 4 illustrates the schematic diagram into the checkout gear of a preferred embodiment of the present invention.Please refer to Fig. 4, checkout gear 280 can comprise that most bars detect distribution 282, most bar switch wiring 284, a plurality of switch element 285 and sense switch line 287.Illustrate as Fig. 4, detect distribution 282, and respectively detect distribution 282 and be electrically connected to electrode distribution 270 respectively perpendicular to electrode distribution 270.Switch wiring 284 is parallel to electrode distribution 270, and each bar switch wiring 284 is to be arranged between the two adjacent electrode wirings 270.Switch element 285 is disposed at respectively on each switch wiring 284, and each detects distribution 282 is to electrically connect by each switch element 285 with each electrode distribution 270, and has an electrode tie point 289 between each electrode distribution 270 and each the detection distribution 282.Sense switch line 287 electrically connects switch wiring 284, to carry out switch for switch element 285.
Please continue with reference to figure 4, detecting distribution 282 is to electrically connect by switch element 285 with electrode distribution 270.Each switch element 285 comprises at least one thin-film transistor 286, and this thin-film transistor 286 has grid 286a, first source/drain electrode 286b and second source/drain electrode 286c.
In this thin-film transistor 286, grid 286a is electrically connected to corresponding switch wiring 284, the first sources/drain electrode 286b and is electrically connected to the detection distribution 282 that corresponding electrode distribution 270, the second sources/drain electrode 286c is electrically connected to correspondence.Particularly, first source/drain electrode 286b electrically connects with corresponding electrode distribution 270 by contact hole H.In addition, in other embodiments, the switch element that switch element 285 also can be made up of a plurality of thin-film transistors 286 or other active elements, the present invention does not limit switch element 285 and only comprises a thin-film transistor.
It should be noted that most switch elements 285 are to be disposed at respectively on each switch wiring 284, but not directly be disposed on the electrode distribution 270.When detecting, from sense switch line 287 input voltages to each switch wiring 284 and each switch element 285 of conducting, so, can detect for electrode distribution 270 by detecting distribution 282.After finishing detection, off switch element 285 makes electrode distribution 270 and detects distribution 282 disconnections.
Therefore, when showing, each electrode distribution 270 can normal operations and can be via detecting distribution 282 mutual conduction.And switch element 285 is independent of electrode distribution 270 and is configured in addition on the switch wiring 284, makes under normal operation, is in the signal that the switch element 285 of closed condition can't impeded electrode distribution 270 and transmits.This is by the technology effect that is beyond one's reach of existing Thin Film Transistor-LCD 104 as shown in Figure 2, is described as follows.
Please be simultaneously with reference to Fig. 2 and Fig. 3, in existing Thin Film Transistor-LCD 104, because switch element 168 is directly to be arranged on scan wiring 162 or the data wiring 164, so, switch element 168 (checkout gear 160) also can't be arranged between gate driver circuit 172 and the viewing area 170, also can't be arranged between source electrode drive circuit 174 and the viewing area 170.
More specifically, suppose checkout gear 160 is arranged on (or between source electrode drive circuit 174 and viewing area 170) between gate driver circuit 172 and the viewing area 170, when switch element 168 is a conducting state, can test Thin Film Transistor-LCD 104 naturally.
But, when desiring to enter show state, need switch element 168 is closed.Therefore, the signal of sending from gate driver circuit 172 or source electrode drive circuit 174 hinders pent switch element 168 and can't be sent in the viewing area 170, and this will cause can't show image.
Second embodiment
In addition, in the manufacturing process of active elements array substrates 200, often be accompanied by the phenomenon of buildup of static electricity, after electric charge is accumulate to a certain degree, just can produce static discharge, and destroy the circuit on the active elements array substrates 200.For fear of the problem of above-mentioned electrostatic breakdown, the present invention proposes another kind of active elements array substrates.
Fig. 5 illustrates the schematic diagram into the active elements array substrates of second embodiment of the invention.Please refer to Fig. 5; the active elements array substrates 300 and first embodiment of present embodiment are similar; just active elements array substrates 300 comprises that also at least one short-circuit rods 290 is arranged in the periphery circuit region 220; short-circuit rods 290 electrically connects and detects distribution 282; and can be used as static discharge (electrostatic discharge; ESD) protection circuit is to reduce above-mentioned electrostatic breakdown problem.
Particularly, also can not need to use short-circuit rods 290, directly make each drive weld pad 260 other all panel detection weld pads (panel detecting pad) and be electrically connected with same signal.Illustrate as Fig. 3, Fig. 5, this active elements array substrates 300 more comprises at least one panel detection weld pad P1, P2, P3, is arranged at these corresponding driving weld pad 260 sides, and wherein, the panel detection weld pad P1 that drive signal is identical is electrically connected.
More specifically, P1, P1 (only illustrating two) at this be electrically connected, P2, P2 be electrically connected (only illustrating two at this), P3, P3 are be electrically connected (only illustrating two at this), or other panel detection weld pads with identical drive signals that do not illustrate are to be electrically connected.Thus, also can reach the effect of static discharge effectively.
In addition, more cause the destruction of switch element 285 in the checkout gear 280 for fear of above-mentioned buildup of static electricity, and cause many electrode wirings 270 problem of short-circuit, the present invention proposes a kind of checkout gear 380 in addition.
Fig. 6 illustrates the schematic diagram into the another kind of checkout gear of preferred embodiment of the present invention.Please refer to Fig. 6, the checkout gear 280 of the checkout gear 380 and first embodiment is similar, and the two difference is: switch element 285 also is provided with diode 288, is electrically connected to detect between distribution 282 and the switch wiring 284.
This diode 288 is in parallel with thin-film transistor 286.Therefore, when electrode distribution 270 bore excessive electric current, electric charge will be via the path of the diode 288 of correspondence, and can not pass through thin-film transistor 286.So charge transfer is to corresponding switch wiring 284, and is flowed to sense switch line 287 again and discharges.Therefore, can avoid super-high-current directly to destroy thin-film transistor 286, and prevent 270 display abnormalities that signal shorts causes of electrode distribution.
Fig. 7 illustrates the schematic diagram into a kind of display panels of preferred embodiment of the present invention.Please refer to Fig. 7, display panels 400 comprises an active elements array substrates 410, a colored optical filtering substrates 420 and a liquid crystal layer 430.Active elements array substrates 410 can be above-mentioned arbitrary active elements array substrates 200,300,, no longer repeats at this in as mentioned above as for relevant member.Colored optical filtering substrates 420 is disposed at the subtend of active elements array substrates 410.430 of liquid crystal layers are disposed between colored optical filtering substrates 420 and the active elements array substrates 410.
Similarly, because have above-mentioned checkout gear 280,380 in the active elements array substrates 410, so, when making this display panels 400, can not need to cut and split processing procedure, and then can shorten the production time-histories and reduce cost for active elements array substrates 410.
In sum, active elements array substrates and display panels proposed by the invention have following advantage at least:
(1) because checkout gear directly is disposed at frontal border area, is different from the subtend that existing checkout gear can only be disposed at drive circuit.So the area of panel periphery circuit region of the present invention can not increase, and in the design applicable to bilateral gate/source driving.
(2) by the configuration that switch element is set in checkout gear, so after carrying out testing electrical property for active elements array substrates, can not need extra cutting to split processing procedure and cut off electric connection between checkout gear and the electrode distribution, therefore can shorten the production time-histories and reduce cost.
(3) switch element is configured on the switch wiring that is independent of the electrode distribution in addition.Therefore, carry out signal when transmitting, become the signal that the switch element of closed condition can not hinder on the electrode distribution yet and transmit at show state.
(4), can avoid active elements array substrates effectively or display panels is subjected to electrostatic breakdown by short-circuit rods, diode or make the design such as be connected to each other of the panel detection weld pad of identical drive signals.
Though the present invention discloses as above with preferred embodiment; right its is not in order to qualification the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when can doing a little modification and perfect, so protection scope of the present invention is when with being as the criterion that claims were defined.
Claims (12)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810081742A CN101527305A (en) | 2008-03-07 | 2008-03-07 | Active element array substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810081742A CN101527305A (en) | 2008-03-07 | 2008-03-07 | Active element array substrate |
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| CN101527305A true CN101527305A (en) | 2009-09-09 |
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| CN200810081742A Pending CN101527305A (en) | 2008-03-07 | 2008-03-07 | Active element array substrate |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102967954A (en) * | 2012-11-20 | 2013-03-13 | 深圳市华星光电技术有限公司 | Device and method for testing liquid crystal panel |
| CN103246092A (en) * | 2013-04-28 | 2013-08-14 | 京东方科技集团股份有限公司 | Array substrate and display |
| CN103676370A (en) * | 2012-09-19 | 2014-03-26 | 上海中航光电子有限公司 | Thin film transistor (TFT) array substrate and liquid crystal panel thereof |
| CN104111550A (en) * | 2014-08-08 | 2014-10-22 | 深圳市华星光电技术有限公司 | Liquid crystal panel detection circuit |
| CN104916621A (en) * | 2015-04-21 | 2015-09-16 | 深超光电（深圳）有限公司 | Line structure and display panel |
| TWI553601B (en) * | 2015-01-16 | 2016-10-11 | 友達光電（廈門）有限公司 | Display panel and crack detecting method thereof |
| CN109637404A (en) * | 2018-11-21 | 2019-04-16 | 惠科股份有限公司 | drive circuit and display panel |
| CN109791746A (en) * | 2016-09-29 | 2019-05-21 | 夏普株式会社 | Active-matrix substrate, display panel and the display device for having display panel |
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2008
- 2008-03-07 CN CN200810081742A patent/CN101527305A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103676370A (en) * | 2012-09-19 | 2014-03-26 | 上海中航光电子有限公司 | Thin film transistor (TFT) array substrate and liquid crystal panel thereof |
| CN102967954A (en) * | 2012-11-20 | 2013-03-13 | 深圳市华星光电技术有限公司 | Device and method for testing liquid crystal panel |
| CN102967954B (en) * | 2012-11-20 | 2015-11-25 | 深圳市华星光电技术有限公司 | The proving installation of liquid crystal panel and method |
| CN103246092A (en) * | 2013-04-28 | 2013-08-14 | 京东方科技集团股份有限公司 | Array substrate and display |
| CN103246092B (en) * | 2013-04-28 | 2015-08-19 | 京东方科技集团股份有限公司 | Array base palte and display device |
| US10170380B2 (en) | 2013-04-28 | 2019-01-01 | Boe Technology Group Co., Ltd. | Array substrate and display device |
| CN104111550A (en) * | 2014-08-08 | 2014-10-22 | 深圳市华星光电技术有限公司 | Liquid crystal panel detection circuit |
| WO2016019605A1 (en) * | 2014-08-08 | 2016-02-11 | 深圳市华星光电技术有限公司 | Liquid crystal panel detection circuit |
| TWI553601B (en) * | 2015-01-16 | 2016-10-11 | 友達光電（廈門）有限公司 | Display panel and crack detecting method thereof |
| CN104916621B (en) * | 2015-04-21 | 2018-01-09 | 深超光电（深圳）有限公司 | Line construction and display panel |
| CN104916621A (en) * | 2015-04-21 | 2015-09-16 | 深超光电（深圳）有限公司 | Line structure and display panel |
| CN109791746A (en) * | 2016-09-29 | 2019-05-21 | 夏普株式会社 | Active-matrix substrate, display panel and the display device for having display panel |
| CN109791746B (en) * | 2016-09-29 | 2021-06-08 | 夏普株式会社 | Active matrix substrate, display panel, and display device having display panel |
| CN109637404A (en) * | 2018-11-21 | 2019-04-16 | 惠科股份有限公司 | drive circuit and display panel |
| WO2020103193A1 (en) * | 2018-11-21 | 2020-05-28 | 惠科股份有限公司 | Driver circuit and display panel |
| US11663943B2 (en) | 2018-11-21 | 2023-05-30 | HKC Corporation Limited | Drive circuit and display panel |
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