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CN101521459B - Resonant Switched Capacitor DC Voltage Converter - Google Patents

Resonant Switched Capacitor DC Voltage Converter Download PDF

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CN101521459B
CN101521459B CN2008100823592A CN200810082359A CN101521459B CN 101521459 B CN101521459 B CN 101521459B CN 2008100823592 A CN2008100823592 A CN 2008100823592A CN 200810082359 A CN200810082359 A CN 200810082359A CN 101521459 B CN101521459 B CN 101521459B
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CN101521459A (en
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郑家伟
何濠辉
丁凯
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Hong Kong Polytechnic University HKPU
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Abstract

The invention relates to a resonance switch capacitor direct-current voltage converter which comprises a first voltage node, a second voltage node, a first switch, a second switch, a first diode, a second diode and a control circuit, wherein a first voltage is arranged between the first voltage node and a negative line, a second voltage is arranged between the second voltage node and the negative line, the control circuit provides switch gate signals for the first switch and the second switch, the resonance switch capacitor direct-current voltage converter further comprises a center tap inductor and a resonance capacitor, wherein the center tap inductor is connected between the first switch and the second switch, and the resonance capacitor is connected between a common node of the first diode and the second diode and the center node of the center tap inductor. Compared with the traditional switched capacitor direct current voltage converter, the invention has the advantages of reducing complexity, loss and cost, improving speed and avoiding limitation.

Description

谐振开关电容直流电压变换器Resonant Switched Capacitor DC Voltage Converter

技术领域technical field

本发明涉及谐振开关电容直流电压变换器。 The invention relates to a resonant switched capacitor DC voltage converter. the

背景技术Background technique

在直流电源变换领域,采用一种结合开关和电容的变换电路来变换不同电压。此类变换器将电容用于储存电能,称之为开关电容变换器(SwitchedCapacity Converter,SCC)。由于此类变换器没有电感或变压器,其体积小于其他类型的变换器且易于在集成电路上制成。但是,在为开关电容充电放电时通常会出现高尖峰电流。因此,此类变换器通常用于低压环境。美国专利公开号US20040141345A1提供了一种称为谐振开关电容变换器(SwitchedCapacitor Resonant Converter,SCRC)的新的开关电容电路,其可工作在高开关频率以及高电压环境下。 In the field of DC power conversion, a conversion circuit combining switches and capacitors is used to convert different voltages. This type of converter uses capacitors to store electrical energy and is called a switched capacitor converter (SwitchedCapacity Converter, SCC). Since this type of converter has no inductor or transformer, it is smaller than other types of converters and can be easily fabricated on an integrated circuit. However, high peak currents typically occur when charging and discharging switched capacitors. Therefore, such converters are usually used in low voltage environments. US Patent Publication No. US20040141345A1 provides a new switched capacitor circuit called a resonant switched capacitor converter (Switched Capacitor Resonant Converter, SCRC), which can work in a high switching frequency and high voltage environment. the

SCRC是基于去除包括谐振变换器的主磁能存储设备而设计的。SCRC工作在零电流开关环境,如开关损耗极低且没有EMI(ElectromagneticInterference,电磁干扰)问题。而且,其效率也相当高,有可能高于90%。其结构简单,在电路中只了加入一个与开关电容一起谐振的小电感,因此磁性部件的成本较低。 SCRCs are designed based on the removal of the main magnetic energy storage device including the resonant converter. SCRC works in a zero-current switching environment, such as extremely low switching loss and no EMI (Electromagnetic Interference, electromagnetic interference) problems. Also, its efficiency is quite high, possibly higher than 90%. Its structure is simple, and only a small inductance resonant with the switching capacitor is added in the circuit, so the cost of the magnetic components is low. the

虽然SCRC具有诸多优点,但简单门驱动电路不可应用于该变换器,需要隔离变压器和/或半桥门驱动,因此提高了SCRC的复杂性。而且,门驱动变压器中的寄生电感限制了驱动速度,导致在高频应用中产生更多开关损耗。半桥门驱动具有高频操作的局限性而且变换器成本提高。 While SCRC has many advantages, simple gate drive circuits cannot be applied to this converter, requiring isolation transformers and/or half-bridge gate drives, thus increasing the complexity of the SCRC. Also, the parasitic inductance in the gate drive transformer limits the drive speed, resulting in more switching losses in high frequency applications. Half-bridge gate drives have limitations for high-frequency operation and increased converter cost. the

发明内容Contents of the invention

本发明目的在于提供一种谐振开关电容直流电压变换器,该直流变换器将采用简单门驱动电路,降低了SCRC的复杂性,同时通过降低寄生电感提高了驱动速度,降低了高频应用中的开关损耗,而且避免了高频操作的局限性,降低了变换器的成本。 The purpose of the present invention is to provide a resonant switched capacitor DC voltage converter. The DC converter will use a simple gate drive circuit, which reduces the complexity of the SCRC. At the same time, the driving speed is improved by reducing the parasitic inductance, and the high frequency application is reduced. switching loss, and avoid the limitations of high-frequency operation, reducing the cost of the converter. the

为了达到上述发明目的,本发明为一种谐振开关电容直流电压变换器,包括第一电压节点,第二电压节点,第一开关,第二开关,第一二极管,第二二极管,控制电路,其中,第一电压节点和负线之间具有第一电压,该第二电压节点和负线之间具有第二电压,控制电路为该第一开关和第二开关提供开关门信号,该谐振开关电容直流电压变换器进一步包括中心抽头电感和谐振电容,其中,中心抽头电感连接在所述第一开关和第二开关之间,谐振电容连接在所述第一二极管和第二二极管的共同节点和该中心抽头电感的中心节点之间;该第一开关和该第二开关为绝缘栅双极型晶体管或一对互补金属氧化物半导体场效应管开关;其中该第一开关和该第二开关为一对互补金属氧化物半导体场效应管开关时,该第一开关是P沟道金属氧化物半导体场效应管,该第二开关是N沟道金属氧化物半导体场效应管;且开关、电压节点、二极管、负线之间的连接关系为以下三种之一:第一种:所述第一开关和第二开关串联在第一电压节点和负线之间,该第一二极管和该第二二极管串联在该第一电压节点和该第二电压节点之间;第二种:所述第一开关和第二开关串联在该第一电压节点和该第二电压节点之间,该第一二极管和该第二二极管串联在该第二电压节点和该负线之间;第三种:所述第一开关和第二开关串联在该第一电压节点和该负线之间,该第一二极管和该第二二极管串联在该第二电压节点和该负线之间。 In order to achieve the purpose of the above invention, the present invention is a resonant switched capacitor DC voltage converter, comprising a first voltage node, a second voltage node, a first switch, a second switch, a first diode, a second diode, A control circuit, wherein a first voltage is provided between the first voltage node and the negative line, a second voltage is provided between the second voltage node and the negative line, and the control circuit provides switch gate signals for the first switch and the second switch, The resonant switched capacitor DC voltage converter further includes a center tap inductor and a resonance capacitor, wherein the center tap inductor is connected between the first switch and the second switch, and the resonance capacitor is connected between the first diode and the second switch. Between the common node of the diode and the central node of the center tap inductor; the first switch and the second switch are insulated gate bipolar transistors or a pair of complementary metal oxide semiconductor field effect transistor switches; wherein the first When the switch and the second switch are a pair of complementary metal oxide semiconductor field effect transistor switches, the first switch is a P channel metal oxide semiconductor field effect transistor, and the second switch is an N channel metal oxide semiconductor field effect transistor. and the connection relationship between the switch, the voltage node, the diode, and the negative line is one of the following three types: the first type: the first switch and the second switch are connected in series between the first voltage node and the negative line, the The first diode and the second diode are connected in series between the first voltage node and the second voltage node; the second type: the first switch and the second switch are connected in series between the first voltage node and the second voltage node Between the second voltage node, the first diode and the second diode are connected in series between the second voltage node and the negative line; the third type: the first switch and the second switch are connected in series Between the first voltage node and the negative line, the first diode and the second diode are connected in series between the second voltage node and the negative line. the

如本发明优选具体实施例所述的直流电压变换器,其中,所述控制电路为自启动门驱动控制电路。 According to the DC voltage converter described in the preferred embodiment of the present invention, the control circuit is a self-starting gate drive control circuit. the

如本发明优选具体实施例所述的直流电压变换器,其中,当所述连接关系为第二种时,所述控制电路利用所述第一节点和第二节点之间的电压作为自启动提供给门驱动的电源 According to the DC voltage converter described in the preferred specific embodiment of the present invention, when the connection relationship is the second type, the control circuit uses the voltage between the first node and the second node as a self-starting supply Power supply for gate drive

如本发明优选具体实施例所述的谐振开关电容直流电压变换器,其中,当所述连接关系为第三种时,所述控制电路利用所述第一电压节点和所述负线之间的电压作为自启动提供给门驱动的电源。 According to the resonant switched capacitor DC voltage converter described in the preferred embodiment of the present invention, when the connection relationship is the third type, the control circuit utilizes the connection between the first voltage node and the negative line The voltage is provided as the power supply for the gate driver for self-starting. the

本发明有点在于应用简单门驱动,降低了SCRC的复杂性,同时通过降低寄生电感提高了驱动速度,降低了高频应用中的开关损耗,而且避免了高频操作的局限性,降低了变换器的成本。 The advantage of the present invention lies in the application of simple gate drive, which reduces the complexity of SCRC, improves the driving speed by reducing parasitic inductance, reduces the switching loss in high-frequency applications, and avoids the limitations of high-frequency operation, reducing the converter the cost of. the

附图说明Description of drawings

以下参照附图详述本发明的优点和特征,其中 Advantage and feature of the present invention are described in detail below with reference to accompanying drawing, wherein

图1为根据本发明具体实施例的升压型谐振开关电容直流电压变换器的电路图; Fig. 1 is the circuit diagram of step-up type resonant switched capacitor DC voltage converter according to a specific embodiment of the present invention;

图2和图3为图1所示电路的工作原理示意图; Fig. 2 and Fig. 3 are schematic diagrams of the working principle of the circuit shown in Fig. 1;

图4为图1所示电路的门极和电流波形图; Fig. 4 is the gate pole and current waveform diagram of the circuit shown in Fig. 1;

图5为图1所示电路的门极源极电压和电容电流波形图; Fig. 5 is a gate-source voltage and a capacitor current waveform diagram of the circuit shown in Fig. 1;

图6为图1所示电路的漏极门极电压和电容电流波形图; Fig. 6 is the drain gate voltage of the circuit shown in Fig. 1 and the capacitive current waveform diagram;

图7为根据本发明具体实施例的降压型谐振开关电容直流电压变换器的电路图;以及 7 is a circuit diagram of a step-down resonant switched capacitor DC voltage converter according to a specific embodiment of the present invention; and

图8为根据本发明具体实施例的逆变型谐振开关电容直流电压变换器的电路图。 FIG. 8 is a circuit diagram of an inverter resonant switched capacitor DC voltage converter according to a specific embodiment of the present invention. the

具体实施方式Detailed ways

图1所示为升压型谐振开关电容直流电压变换器13的电路图。直流电压变换器13包括一对互补金属氧化物半导体场效应管(MOSFET)开关4、5。开关4是P沟道金属氧化物半导体场效应管,而开关5是N沟道金属氧化物半导体场效应管。在其他实施例中,亦可采用绝缘栅双极型晶体管(IGBTs)及其它适用的半导体开关。每个开关都配有反向并联二极管作为MOSFET封装的一部分。第一和第二二极管6、7串联在第一和第二电压节点1、2之间。 FIG. 1 is a circuit diagram of a step-up resonant switched capacitor DC voltage converter 13 . The DC voltage converter 13 includes a pair of complementary metal oxide semiconductor field effect transistor (MOSFET) switches 4 , 5 . Switch 4 is a P-channel MOSFET, and switch 5 is an N-channel MOSFET. In other embodiments, insulated gate bipolar transistors (IGBTs) and other suitable semiconductor switches may also be used. Each switch is equipped with an anti-parallel diode as part of the MOSFET package. A first and a second diode 6,7 are connected in series between the first and the second voltage node 1,2. the

直流电压变换器13在第一电压节点1和地或负线3之间具有第一电压V1,在第二电压节点和地或负线3之间具有第二电压电压V2。地或负线3位于任一电压低于节点1、2的电势。两个滤波电容8、11分别与第一和第二电压端V1、V2并联。 The DC voltage converter 13 has a first voltage V1 between the first voltage node 1 and the ground or negative line 3 and a second voltage V2 between the second voltage node and the ground or negative line 3 . Ground or negative line 3 is at either potential which is lower than the potential of nodes 1,2. Two filter capacitors 8, 11 are connected in parallel with the first and second voltage terminals V1, V2 respectively. the

中心抽头电感10连接在第一和第二MOSFET4、5之间。谐振电容9连接在二极管6、7的共同节点和电感10的中心节点15之间。在变换器中,电容9提供主要储能器件。电感10可采用由聚合物粘合磁芯所制成的电感或空心电感与电容9产生谐振。 A center tapped inductor 10 is connected between the first and second MOSFETs 4,5. The resonant capacitor 9 is connected between the common node of the diodes 6 , 7 and the central node 15 of the inductor 10 . In the converter, capacitor 9 provides the main energy storage device. The inductor 10 can be an inductor made of a polymer bonded magnetic core or an air-core inductor that resonates with the capacitor 9 . the

自驱门驱动控制电路12为MOSFET4、5提供开关门信号。门驱动控制 电路12在门极和源极之间提供高电压来开启N沟道MOSFET5并关断P沟道MOSFET4。门驱动控制电路12提供零伏特或最好负电压来开启P沟道MOSFET4并关断N沟道MOSFET5。优选的,输入电压V1应小于或等于MOSFET4、5的门极和源极之间的最高电压。门驱门驱动电路12可为集成电路或具有高速晶振电路来提供必要的门极驱动信号。 The self-driving gate driving control circuit 12 provides switching gate signals for the MOSFETs 4 and 5 . The gate drive control circuit 12 provides a high voltage between the gate and the source to turn on the N-channel MOSFET5 and turn off the P-channel MOSFET4. Gate drive control circuit 12 provides zero volts or preferably a negative voltage to turn on P-channel MOSFET 4 and turn off N-channel MOSFET 5 . Preferably, the input voltage V1 should be less than or equal to the highest voltage between the gate and source of MOSFETs 4 and 5 . Gate Drive The gate drive circuit 12 may be an integrated circuit or a high-speed crystal oscillator circuit to provide necessary gate drive signals. the

直流电压变换器13为升压型电压变换器。电压V1为输入端而V2为输出端。在理想情况下,电压V2等于电压V1的两倍。 The DC voltage converter 13 is a step-up voltage converter. Voltage V1 is the input and V2 is the output. Ideally, the voltage V2 is equal to twice the voltage V1. the

直流电压变换器13通过电容9充电放电工作。电容9作用为与电感10谐振的电容从而为MOSFET获取零电流开关环境。当MOSFET4开启,二极管7正向偏置并开启,电流通过包括MOSFET4、电感10的上部电感,开关电容以及二极管7的串联电路。最初,电感中的电流总为零;因此开启状态下串联电路的电流为零。由于串联的电容9以及电感10的上部电感,在串联电路中的电流为以 The DC voltage converter 13 works by charging and discharging the capacitor 9 . Capacitor 9 acts as a resonant capacitor with inductor 10 to obtain a zero current switching environment for the MOSFET. When the MOSFET 4 is turned on, the diode 7 is forward biased and turned on, and the current flows through the series circuit including the MOSFET 4 , the upper inductor of the inductor 10 , the switched capacitor, and the diode 7 . Initially, the current in the inductor is always zero; therefore the current in the series circuit in the on state is zero. Due to the capacitor 9 connected in series and the upper inductance of the inductor 10, the current in the series circuit is

22 ππ LL 22 CC

为周期的正弦曲线,其中L是电感10的电感值,C是电容9的电容值。假设首先通过正电流,在第一半周期的末端,二极管7反向偏置从而抵消负半周期的电流。零电流环境产生且MOSFET4关断。第二MOSFET5开启且二极管6正向偏置。最初电流为零且谐振电流的负半周期流过。在负半周期的末端,二极管6反向偏置,产生零电流环境。通过长于LC谐振电流半个周期的MOSFET开关时间,达到产生零电流开关的效果。 is a periodic sine curve, where L is the inductance value of the inductor 10, and C is the capacitance value of the capacitor 9. Assuming a positive current is passed first, at the end of the first half cycle, the diode 7 is reverse biased so as to cancel out the negative half cycle current. A zero current environment is created and MOSFET4 is turned off. The second MOSFET 5 is turned on and the diode 6 is forward biased. Initially the current is zero and the negative half cycle of the resonant current flows. At the end of the negative half cycle, diode 6 is reverse biased, creating a zero current environment. The effect of generating zero-current switching is achieved by a MOSFET switching time that is longer than half a period of the LC resonant current. the

因为开关电容9通过谐振正弦电流充电放电,所以电路不存在电流尖峰问题。 Because the switched capacitor 9 is charged and discharged by the resonant sinusoidal current, there is no current spike problem in the circuit. the

图2和图3显示一个升压开关周期的两个阶段,粗体表示电流通路。图4显示门极和电流波形。 Figures 2 and 3 show the two phases of a boost switching cycle, with the current paths indicated in bold. Figure 4 shows the gate and current waveforms. the

参照图1和图4,本发明的升压型开关电容变换器包括一对互补P沟道/N沟道MOSFET4、5。自驱门驱动控制电路12为MOSFET4、5提供开关门信号。门驱动控制电路12在门极和源极之间提供高电压来开启N沟道MOSFET5并关断P沟道MOSFET4。门驱动12提供门极和漏极电压来开启P沟道MOSFET4并关断N沟道MOSFET5。当自驱控制电路12为两个互补开关提供高于3的信号时,半桥臂的N沟道开关开启,同时利用中心抽头电感的下 部电感与开关电感产生谐振。或者,当自驱控制电路为两个互补开关提供低于地3的信号时,上部P沟道开关的漏极和门极之间的电压处于高位,因此半桥臂的上部MOSFET4开启,采用中心抽头电感的上部电感与开关电感谐振。 1 and 4, the boost switched capacitor converter of the present invention includes a pair of complementary P-channel/N-channel MOSFETs 4,5. The self-driving gate driving control circuit 12 provides switching gate signals for the MOSFETs 4 and 5 . The gate drive control circuit 12 provides a high voltage between the gate and the source to turn on the N-channel MOSFET5 and turn off the P-channel MOSFET4. Gate driver 12 provides gate and drain voltages to turn on P-channel MOSFET 4 and turn off N-channel MOSFET 5 . When the self-driving control circuit 12 provides a signal higher than 3 for the two complementary switches, the N-channel switch of the half-bridge arm is turned on, and at the same time, the lower inductance of the center-tap inductor is used to generate resonance with the switch inductance. Alternatively, when the self-driven control circuit provides a signal below ground 3 for the two complementary switches, the voltage between the drain and gate of the upper P-channel switch is high, so the upper MOSFET 4 of the half-bridge arm is turned on, using the center The upper inductance of the tapped inductor resonates with the switching inductance. the

参照图2和图4,在时间t0处,MOSFET5开启而MOSFET4关断。二极管6正向偏置。滤波电容11对连接在第二电压节点2的负载放电。MOSFET5和二极管6与电容9以及电感10的下部电感串联。与电感10的下部电感谐振的开关电容产生的正弦电流经过串联电路。在第一谐振周期的末端,串联电流(电容9电流)为零且二极管6反向偏置抵消负半周期中的电流。电容被充电达到直流电压V1。 Referring to FIGS. 2 and 4 , at time t 0 , MOSFET5 is turned on and MOSFET4 is turned off. Diode 6 is forward biased. The filter capacitor 11 discharges the load connected to the second voltage node 2 . MOSFET 5 and diode 6 are connected in series with capacitor 9 and the lower inductance of inductor 10 . The sinusoidal current generated by the switched capacitor resonant with the lower inductance of the inductor 10 passes through the series circuit. At the end of the first resonant period, the series current (capacitor 9 current) is zero and the diode 6 is reverse biased to cancel the current in the negative half period. The capacitor is charged to a DC voltage V1.

参照图3和图4,在时间t1处,二极管6反向偏置而且电流为零。MOSFET4开启而MOSFET5关断。二极管7正向偏置。输入电压V1和开关电容9串联,理想状况下,电压V2为电压V1的两倍,谐振电流的负半周期产生。滤波电容11再次充电。在负半周期的末端,二极管7反向偏置而电流停止。在时间t2处,MOSFET5再次开启而MOSFET4关断。 Referring to Figures 3 and 4 , at time t1, diode 6 is reverse biased and the current is zero. MOSFET4 is turned on and MOSFET5 is turned off. Diode 7 is forward biased. The input voltage V1 is connected in series with the switched capacitor 9. Under ideal conditions, the voltage V2 is twice the voltage V1, and a negative half cycle of the resonant current is generated. The filter capacitor 11 is charged again. At the end of the negative half cycle, the diode 7 is reverse biased and the current flow stops. At time t2 , MOSFET5 is turned on again and MOSFET4 is turned off.

图5和图6显示谐振开关电容直流变换器的波形,在升压模式下,该变换器配有上述参数和器件值。输入电压V1测量值为12V,输出电压V2测量值为24V。电源(17.1W)最大效率为92.53%。额定电源(50W)效率为86.38%。图5和图6图形的水平分辨率为每单位1微秒。在开关频率为200kHz的情况下,每个MOSFET的开关时间为2.5微秒。电容9和电感10的谐振时间为4微秒。因此,半谐振周期为4微秒。 Figures 5 and 6 show the waveforms of a resonant switched capacitor DC converter in boost mode with the above parameters and component values. The measured value of the input voltage V1 is 12V, and the measured value of the output voltage V2 is 24V. The power supply (17.1W) has a maximum efficiency of 92.53%. The efficiency of the rated power supply (50W) is 86.38%. The horizontal resolution of the graphs in Figures 5 and 6 is 1 microsecond per unit. At a switching frequency of 200kHz, the switching time of each MOSFET is 2.5 microseconds. The resonance time of capacitor 9 and inductor 10 is 4 microseconds. Therefore, the half-resonant period is 4 microseconds. the

可见,本发明提供了具有升压功能的谐振开关电容直流变换器。除了需要中心抽头电感来与开关电容谐振,本发明的直流电路还包括一对互补P沟道/N沟道MOSFET,因此两个互补开关共享同一自驱控制电路,从而降低门驱动成本。无时滞控制的驱动信号可直接用于互补开关,而且半桥臂的电流直通短路可由中心抽头电感限制。 It can be seen that the present invention provides a resonant switched capacitor DC converter with a boost function. In addition to the need for a center-tapped inductor to resonate with the switched capacitor, the DC circuit of the present invention also includes a pair of complementary P-channel/N-channel MOSFETs, so the two complementary switches share the same self-driving control circuit, thereby reducing gate drive costs. The drive signal with dead-time control can be directly applied to the complementary switches, and the current shoot-through of the half-bridge arm can be limited by the center-tapped inductance. the

图7为本发明的第二具体实施例。降压型开关电容准谐振变换器20在第一电压节点1和地或负线3之间具有第一电压端V1,以及在第二节点2和地或负线3之间具有第二电压端V2。地或负线3位于低于电压节点1和2的任何电势。两个滤波电容8、11分别与第一和第二电压端V1、V2并联。变换 器20包括一对互补金属氧化物半导体场效应管(MOSFET)开关4、5。开关4为P沟道MOSFET,开关5为N沟道MOSFET。开关4和开关5串联在第一节点V1和第二节点V2之间,二极管6和二极管7串联在第二节点V2和负线3之间,构成降压型谐振开关电容直流电压变换器。 Fig. 7 is a second specific embodiment of the present invention. The step-down switched capacitor quasi-resonant converter 20 has a first voltage terminal V1 between the first voltage node 1 and the ground or the negative line 3, and a second voltage terminal between the second node 2 and the ground or the negative line 3 V2. Ground or negative line 3 is at any potential below voltage nodes 1 and 2 . Two filter capacitors 8, 11 are connected in parallel with the first and second voltage terminals V1, V2 respectively. Converter 20 includes a pair of complementary metal oxide semiconductor field effect transistor (MOSFET) switches 4,5. Switch 4 is a P-channel MOSFET, and switch 5 is an N-channel MOSFET. The switch 4 and the switch 5 are connected in series between the first node V1 and the second node V2, and the diode 6 and the diode 7 are connected in series between the second node V2 and the negative line 3, forming a step-down resonant switched capacitor DC voltage converter. the

中心抽头电感10连接在第一和第二MOSFET4、5之间。谐振电容9连接在电感10的中心节点15和二极管6、7的共同节点14之间。电容9在该变换器中提供主要的储能器件。电感10可采用由聚合物粘合磁芯所制成的电感或空心电感与电容9产生谐振。 A center tapped inductor 10 is connected between the first and second MOSFETs 4,5. The resonant capacitor 9 is connected between the central node 15 of the inductor 10 and the common node 14 of the diodes 6,7. Capacitor 9 provides the main energy storage device in the converter. The inductor 10 can be an inductor made of a polymer bonded magnetic core or an air-core inductor that resonates with the capacitor 9 . the

自驱门驱动控制电路12利用节点1和节点2之间的电压作为自启动提供给门驱动的电源。自驱门驱动控制电路12为MOSFET4、5提供开关门信号。直流电压变换器20为降压型直流电压变换器。电压V1为输入端,V2在负载端。理想情况下,电压V2等于电压V1的一半。直流电压变换器通过将电容9充放电来工作。电容9作用为与电感10谐振的电容从而为MOSFET获取零电流开关环境。 The self-driving gate drive control circuit 12 uses the voltage between node 1 and node 2 as the power supply for the gate drive for self-starting. The self-driving gate driving control circuit 12 provides switching gate signals for the MOSFETs 4 and 5 . The DC voltage converter 20 is a step-down DC voltage converter. The voltage V1 is at the input end and V2 is at the load end. Ideally, voltage V2 is equal to half of voltage V1. The DC voltage converter works by charging and discharging the capacitor 9 . Capacitor 9 acts as a resonant capacitor with inductor 10 to obtain a zero current switching environment for the MOSFET. the

图8为本发明的第三具体实施例。逆变型开关电容准谐振变换器30在第一电压节点1和地或负线3之间具有第一电压端V1,以及在第二节点2和地或负线3之间具有第二电压端V2。地或负线3可为低于电压节点1和2的任何电位。两个滤波电容8、11分别与第一和第二电压端V1、V2并联。变换器30包括一对互补金属氧化物半导体场效应管(MOSFET)开关4、5。开关4为P沟道MOSFET,开关5为N沟道MOSFET。开关4和开关5串联在第一节点1和负线3之间,二极管6和二极管7串联在第二节点V2和负线3之间,构成逆变型谐振开关电容直流电压变换器。 Fig. 8 is a third specific embodiment of the present invention. The inverter type switched capacitor quasi-resonant converter 30 has a first voltage terminal V1 between the first voltage node 1 and the ground or the negative line 3, and a second voltage terminal between the second node 2 and the ground or the negative line 3 V2. Ground or negative line 3 may be at any potential below voltage nodes 1 and 2 . Two filter capacitors 8, 11 are connected in parallel with the first and second voltage terminals V1, V2 respectively. Converter 30 includes a pair of complementary metal oxide semiconductor field effect transistor (MOSFET) switches 4,5. Switch 4 is a P-channel MOSFET, and switch 5 is an N-channel MOSFET. The switch 4 and the switch 5 are connected in series between the first node 1 and the negative line 3, and the diode 6 and the diode 7 are connected in series between the second node V2 and the negative line 3, forming an inverter resonant switched capacitor DC voltage converter. the

中心抽头电感10连接在第一和第二MOSFET4、5之间。谐振电容9连接在电感10的中心节点15和二极管6、7的共同节点14之间。电容9在该变换器中提供主要的储能器件。电感10可采用由聚合物粘合磁芯所制成的电感或空心电感与电容9产生谐振。 A center tapped inductor 10 is connected between the first and second MOSFETs 4,5. The resonant capacitor 9 is connected between the central node 15 of the inductor 10 and the common node 14 of the diodes 6,7. Capacitor 9 provides the main energy storage device in the converter. The inductor 10 can be an inductor made of a polymer bonded magnetic core or an air-core inductor that resonates with the capacitor 9 . the

自驱门驱动控制电路12利用节点1和节点3之间的电压作为自启动提供给门驱动的电源。自驱门驱动控制电路12为MOSFET4、5提供开关门信号。直流变换器30为逆变电压变换器。电压V1为输入端,V2在负载端。理想情况下,电压V2等于电压V1的负值。变换器通过将电容9充放电来工作。电 容9作用为与电感10谐振的电容从而为MOSFET获取零电流开关环境。 The self-driving gate drive control circuit 12 utilizes the voltage between node 1 and node 3 as the power supply for self-starting gate drive. The self-driving gate driving control circuit 12 provides switching gate signals for the MOSFETs 4 and 5 . The DC converter 30 is an inverter voltage converter. The voltage V1 is at the input end and V2 is at the load end. Ideally, voltage V2 is equal to the negative value of voltage V1. The converter works by charging and discharging the capacitor 9 . Capacitor 9 acts as a capacitor resonant with inductor 10 to obtain a zero-current switching environment for the MOSFET. the

以上,是为了本领域技术人员理解本发明,而对本发明所进行的详细描述,但可以想到,在不脱离本发明的权利要求所涵盖的范围内还可以做出其它的变化和修改,这些变化和修改均在本发明的保护范围内。 The above is a detailed description of the present invention for those skilled in the art to understand the present invention, but it is conceivable that other changes and modifications can be made without departing from the scope covered by the claims of the present invention. These changes All modifications and modifications are within the protection scope of the present invention. the

Claims (4)

1.一种谐振开关电容直流电压变换器,包括第一电压节点,第二电压节点,第一开关,第二开关,第一二极管,第二二极管,控制电路,其中,第一电压节点和负线之间具有第一电压,该第二电压节点和负线之间具有第二电压,控制电路为该第一开关和第二开关提供开关门信号,其特征在于,该谐振开关电容直流电压变换器进一步包括中心抽头电感和谐振电容,其中,中心抽头电感连接在所述第一开关和第二开关之间,谐振电容连接在所述第一二极管和第二二极管的共同节点和该中心抽头电感的中心节点之间;1. A resonant switched capacitor DC voltage converter, comprising a first voltage node, a second voltage node, a first switch, a second switch, a first diode, a second diode, and a control circuit, wherein the first There is a first voltage between the voltage node and the negative line, there is a second voltage between the second voltage node and the negative line, the control circuit provides switching gate signals for the first switch and the second switch, and the characteristic is that the resonant switch The capacitive DC voltage converter further includes a center-tapped inductor and a resonant capacitor, wherein the center-tapped inductor is connected between the first switch and the second switch, and the resonant capacitor is connected between the first diode and the second diode between the common node of and the central node of the center-tapped inductor; 该第一开关和该第二开关为绝缘栅双极型晶体管或一对互补金属氧化物半导体场效应管开关;其中该第一开关和该第二开关为一对互补金属氧化物半导体场效应管开关时,该第一开关是P沟道金属氧化物半导体场效应管,该第二开关是N沟道金属氧化物半导体场效应管;The first switch and the second switch are insulated gate bipolar transistors or a pair of complementary metal-oxide-semiconductor field-effect transistor switches; wherein the first switch and the second switch are a pair of complementary metal-oxide-semiconductor field-effect transistors When switching, the first switch is a P-channel MOSFET, and the second switch is an N-channel MOSFET; 且开关、电压节点、二极管、负线之间的连接关系为以下三种之一:And the connection relationship between the switch, the voltage node, the diode, and the negative line is one of the following three types: 第一种:所述第一开关和第二开关串联在第一电压节点和负线之间,该第一二极管和该第二二极管串联在该第一电压节点和该第二电压节点之间;The first type: the first switch and the second switch are connected in series between the first voltage node and the negative line, and the first diode and the second diode are connected in series between the first voltage node and the second voltage between nodes; 第二种:所述第一开关和第二开关串联在该第一电压节点和该第二电压节点之间,该第一二极管和该第二二极管串联在该第二电压节点和该负线之间;The second type: the first switch and the second switch are connected in series between the first voltage node and the second voltage node, and the first diode and the second diode are connected in series between the second voltage node and the second voltage node between the negative lines; 第三种:所述第一开关和第二开关串联在该第一电压节点和该负线之间,该第一二极管和该第二二极管串联在该第二电压节点和该负线之间。The third type: the first switch and the second switch are connected in series between the first voltage node and the negative line, and the first diode and the second diode are connected in series between the second voltage node and the negative line between lines. 2.如权利要求1所述的直流电压变换器,其特征在于,所述控制电路为自启动门驱动控制电路。2. The DC voltage converter according to claim 1, wherein the control circuit is a self-starting gate drive control circuit. 3.如权利要求1所述的直流电压变换器,其特征在于,当所述连接关系为第二种时,所述控制电路利用所述第一节点和第二节点之间的电压作为自启动提供给门驱动的电源。3. The DC voltage converter according to claim 1, wherein when the connection relationship is the second type, the control circuit uses the voltage between the first node and the second node as a self-starting Power supply to the gate drive. 4.如权利要求1所述的谐振开关电容直流电压变换器,其特征在于,当所述连接关系为第三种时,所述控制电路利用所述第一电压节点和所述负线之间的电压作为自启动提供给门驱动的电源。4. The resonant switched capacitor DC voltage converter according to claim 1, wherein when the connection relationship is the third type, the control circuit utilizes the connection between the first voltage node and the negative line The voltage is used as the power supply provided to the gate driver for self-starting.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI579570B (en) * 2016-10-27 2017-04-21 Sea Sonic Electronics Co Ltd Step - down power conversion circuit

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10693415B2 (en) 2007-12-05 2020-06-23 Solaredge Technologies Ltd. Testing of a photovoltaic panel
US11881814B2 (en) 2005-12-05 2024-01-23 Solaredge Technologies Ltd. Testing of a photovoltaic panel
US11855231B2 (en) 2006-12-06 2023-12-26 Solaredge Technologies Ltd. Distributed power harvesting systems using DC power sources
US11296650B2 (en) 2006-12-06 2022-04-05 Solaredge Technologies Ltd. System and method for protection during inverter shutdown in distributed power installations
US8618692B2 (en) 2007-12-04 2013-12-31 Solaredge Technologies Ltd. Distributed power system using direct current power sources
US8319471B2 (en) 2006-12-06 2012-11-27 Solaredge, Ltd. Battery power delivery module
US9088178B2 (en) 2006-12-06 2015-07-21 Solaredge Technologies Ltd Distributed power harvesting systems using DC power sources
US8384243B2 (en) 2007-12-04 2013-02-26 Solaredge Technologies Ltd. Distributed power harvesting systems using DC power sources
US11687112B2 (en) 2006-12-06 2023-06-27 Solaredge Technologies Ltd. Distributed power harvesting systems using DC power sources
US8947194B2 (en) 2009-05-26 2015-02-03 Solaredge Technologies Ltd. Theft detection and prevention in a power generation system
US9130401B2 (en) 2006-12-06 2015-09-08 Solaredge Technologies Ltd. Distributed power harvesting systems using DC power sources
US11735910B2 (en) 2006-12-06 2023-08-22 Solaredge Technologies Ltd. Distributed power system using direct current power sources
US8963369B2 (en) 2007-12-04 2015-02-24 Solaredge Technologies Ltd. Distributed power harvesting systems using DC power sources
US11569659B2 (en) 2006-12-06 2023-01-31 Solaredge Technologies Ltd. Distributed power harvesting systems using DC power sources
US11309832B2 (en) 2006-12-06 2022-04-19 Solaredge Technologies Ltd. Distributed power harvesting systems using DC power sources
US8816535B2 (en) 2007-10-10 2014-08-26 Solaredge Technologies, Ltd. System and method for protection during inverter shutdown in distributed power installations
US9112379B2 (en) 2006-12-06 2015-08-18 Solaredge Technologies Ltd. Pairing of components in a direct current distributed power generation system
US8013472B2 (en) 2006-12-06 2011-09-06 Solaredge, Ltd. Method for distributed power harvesting using DC power sources
US8473250B2 (en) 2006-12-06 2013-06-25 Solaredge, Ltd. Monitoring of distributed power harvesting systems using DC power sources
US12316274B2 (en) 2006-12-06 2025-05-27 Solaredge Technologies Ltd. Pairing of components in a direct current distributed power generation system
US11888387B2 (en) 2006-12-06 2024-01-30 Solaredge Technologies Ltd. Safety mechanisms, wake up and shutdown methods in distributed power installations
US8319483B2 (en) 2007-08-06 2012-11-27 Solaredge Technologies Ltd. Digital average input current control in power converter
US11264947B2 (en) 2007-12-05 2022-03-01 Solaredge Technologies Ltd. Testing of a photovoltaic panel
CN101933209B (en) 2007-12-05 2015-10-21 太阳能安吉有限公司 Release mechanism in distributed electrical power apparatus, to wake up and method for closing
US8049523B2 (en) 2007-12-05 2011-11-01 Solaredge Technologies Ltd. Current sensing on a MOSFET
US8289742B2 (en) 2007-12-05 2012-10-16 Solaredge Ltd. Parallel connected inverters
EP4145691A1 (en) 2008-03-24 2023-03-08 Solaredge Technologies Ltd. Switch mode converter including auxiliary commutation circuit for achieving zero current switching
EP2294669B8 (en) 2008-05-05 2016-12-07 Solaredge Technologies Ltd. Direct current power combiner
GB2485527B (en) 2010-11-09 2012-12-19 Solaredge Technologies Ltd Arc detection and prevention in a power generation system
US10673229B2 (en) 2010-11-09 2020-06-02 Solaredge Technologies Ltd. Arc detection and prevention in a power generation system
US10673222B2 (en) 2010-11-09 2020-06-02 Solaredge Technologies Ltd. Arc detection and prevention in a power generation system
US10230310B2 (en) 2016-04-05 2019-03-12 Solaredge Technologies Ltd Safety switch for photovoltaic systems
GB2486408A (en) 2010-12-09 2012-06-20 Solaredge Technologies Ltd Disconnection of a string carrying direct current
GB2483317B (en) 2011-01-12 2012-08-22 Solaredge Technologies Ltd Serially connected inverters
US8570005B2 (en) 2011-09-12 2013-10-29 Solaredge Technologies Ltd. Direct current link circuit
GB2498365A (en) 2012-01-11 2013-07-17 Solaredge Technologies Ltd Photovoltaic module
GB2498790A (en) 2012-01-30 2013-07-31 Solaredge Technologies Ltd Maximising power in a photovoltaic distributed power system
US9853565B2 (en) 2012-01-30 2017-12-26 Solaredge Technologies Ltd. Maximized power in a photovoltaic distributed power system
GB2498791A (en) 2012-01-30 2013-07-31 Solaredge Technologies Ltd Photovoltaic panel circuitry
GB2499991A (en) 2012-03-05 2013-09-11 Solaredge Technologies Ltd DC link circuit for photovoltaic array
US10115841B2 (en) 2012-06-04 2018-10-30 Solaredge Technologies Ltd. Integrated photovoltaic panel circuitry
US9548619B2 (en) 2013-03-14 2017-01-17 Solaredge Technologies Ltd. Method and apparatus for storing and depleting energy
EP4318001A3 (en) 2013-03-15 2024-05-01 Solaredge Technologies Ltd. Bypass mechanism
CN117130027A (en) 2016-03-03 2023-11-28 太阳能安吉科技有限公司 Method for mapping a power generation facility
US10599113B2 (en) 2016-03-03 2020-03-24 Solaredge Technologies Ltd. Apparatus and method for determining an order of power devices in power generation systems
US11081608B2 (en) 2016-03-03 2021-08-03 Solaredge Technologies Ltd. Apparatus and method for determining an order of power devices in power generation systems
US11177663B2 (en) 2016-04-05 2021-11-16 Solaredge Technologies Ltd. Chain of power devices
US11018623B2 (en) 2016-04-05 2021-05-25 Solaredge Technologies Ltd. Safety switch for photovoltaic systems
US12057807B2 (en) 2016-04-05 2024-08-06 Solaredge Technologies Ltd. Chain of power devices
CN109617407B (en) * 2018-12-19 2020-02-07 北京理工大学 Boost type series-parallel full-resonance switch capacitor converter
CN110474548A (en) * 2019-07-12 2019-11-19 厦门大学 A kind of inversion convertor circuit and its control method based on high-frequency impulse
CN110365220B (en) * 2019-08-21 2020-08-14 曹亮平 TLC resonant circuit and power converter applied by same
CN111769737A (en) * 2020-05-22 2020-10-13 湖南大学 Bipolar output switching power supply
WO2022236825A1 (en) * 2021-05-14 2022-11-17 华为数字能源技术有限公司 Dc/dc converter
CN114123767B (en) * 2021-11-22 2023-11-03 西安芯派电子科技有限公司 Boost-buck switch capacitor circuit unit for realizing multiple voltage conversion

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
JP特开2006-262619A 2006.09.28
JP特开平8-317636A 1996.11.29
涂文娟,丘东元,张波.DC/DC谐振开关电容变换器潜电路发生的一般规律分析.《电工技术学报》.2007,第22卷(第12期),98-104. *
黎剑源,丘东元,张波.n阶谐振开关电容变换器潜电路图论分析法.《中国电机工程学报》.2008,第28卷(第3期),53-59. *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI579570B (en) * 2016-10-27 2017-04-21 Sea Sonic Electronics Co Ltd Step - down power conversion circuit

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