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CN101512854B - Tunable generation of terahertz radiation - Google Patents

Tunable generation of terahertz radiation Download PDF

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Publication number
CN101512854B
CN101512854B CN2007800325923A CN200780032592A CN101512854B CN 101512854 B CN101512854 B CN 101512854B CN 2007800325923 A CN2007800325923 A CN 2007800325923A CN 200780032592 A CN200780032592 A CN 200780032592A CN 101512854 B CN101512854 B CN 101512854B
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gain medium
external
magnon
magnon gain
terahertz radiation
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CN101512854A (en
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Y·科瑞布力特
B·G·坦齐莱维奇
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Terahertz Tech LLC
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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Abstract

A method of tunable generation of terahertz radiation comprising: (A) providing a magnon gain medium; wherein the magnon gain medium supports generation of nonequilibrium magnons; (B) generating terahertz radiation in the magnon gain medium; and (C) tuning frequency of the terahertz radiation by causing changes in an external parameter. The substantial tuning of the frequency of the generated terahertz radiation can be achieved by applying an external magnetic field, and by causing changes in a value of the external magnetic field.

Description

Tunable generation of terahertz radiation
Technical field
The present invention relates to the production method of terahertz (terahertz) ripple.
Background technology
The application numbers of submitting on July 3rd, 2006 is 11/481,197, and the U.S. Patent application that is entitled as " GENERATIONOF TERAHERTZ WAVES " has disclosed the production method of terahertz (THz) radiation.The full text of patent application number 11/481,197 is in this combination and will be called patent application #1 hereinafter.But, the adjustability of the THz ripple of generation then is not discussed.
Summary of the invention
The invention provides a kind of adjustable THz photon production method and device.
One aspect of the present invention relates to a kind of tunable generation of terahertz radiation.
In one embodiment, method of the present invention may further comprise the steps: the magnon gain media (A) is provided; Wherein, the magnon gain media is supported the generation of Nonequilibrium magnetic oscillator; (B) in the magnon gain media, produce terahertz radiation; And, adjust the frequency of terahertz radiation (C) by making changes in external parameters.
In one embodiment of this invention, step (A) further comprises: (A1) the magnon gain media is positioned in the thermostat so that the temperature of magnon gain media remains under the critical temperature.
In one embodiment of this invention, step (A) further comprises: (A2) select the magnon gain media from the group that the following is formed: { ferromagnetic semiconductor; Ferromagnetic insulator; And ferromagnetic material }.In one embodiment of this invention, step (A2) further comprises: (A2,1) will comprise that the magnon gain media of selected ferromagnetic material is positioned in the thermostat so that the temperature of this selected ferromagnetic material remains under its Curie temperature.
In one embodiment of this invention, step (B) further comprises: (B1) nonequilibrium electron is injected the magnon gain media; Wherein, the propagation of nonequilibrium electron in the magnon gain media causes the generation of Nonequilibrium magnetic oscillator; And wherein, the interaction between the Nonequilibrium magnetic oscillator causes the generation of terahertz radiation.In one embodiment of this invention, step (B1) further comprises: (B1,1) pumps into the magnon gain media with nonequilibrium electron.In another embodiment of the present invention, step (B1) further comprises: (B1, the 2) nonequilibrium electron that will polarize pumps into the magnon gain media.In an embodiment more of the present invention, step (B1) further comprises: (B1,3) quantity is enough big polarization nonequilibrium electron pumps into the magnon gain media, and wherein, the polarization nonequilibrium electron that has pumped into that quantity is enough big causes having produced the Nonequilibrium magnetic oscillator in the magnon gain media.In another embodiment of the present invention, step (B1) further comprises: (B1,4) the polarization nonequilibrium electron with number of thresholds pumps into the magnon gain media, and wherein, the polarization nonequilibrium electron of number of thresholds is enough to produce the magnon avalanche effect in the magnon gain media.
In one embodiment of this invention, further comprise by making changes in external parameters adjust the step of the frequency of terahertz radiation (C): (C1) apply the external magnetic field; And the value of external magnetic field is changed.In this embodiment of the present invention, the frequency of the terahertz radiation of generation changes because of the correlation of the value of the energy of Nonequilibrium magnetic oscillator and external magnetic field.
In another embodiment of the present invention, further comprise by making changes in external parameters adjust the step of the frequency of terahertz radiation (C): (C3) apply the external fluid static pressure; And the value of external fluid static pressure is changed.In this embodiment of the present invention, the frequency of the terahertz radiation of generation changes because of the stiffness (stiffness) of the Nonequilibrium magnetic oscillator correlation with the value of external fluid static pressure.
In an embodiment more of the present invention, further comprise by making changes in external parameters adjust the step of the frequency of terahertz radiation (C): (C5) apply external electrical field; And the value of external electrical field is changed.In this embodiment of the present invention, the frequency of the terahertz radiation of generation changes because of the correlation of the value of the stiffness of Nonequilibrium magnetic oscillator and external electrical field.
Another aspect of the present invention relates to a kind of generation device of adjustable terahertz radiation.
In one embodiment, the inventive system comprises: (A) magnon gain media; Wherein, the magnon gain media is supported the generation of Nonequilibrium magnetic oscillator; (B) equipment of generation terahertz radiation in the magnon gain media; And the equipment of (C) adjusting the frequency of the terahertz radiation that is produced.
In one embodiment, device of the present invention further comprises: (D) thermostat.In this embodiment of the present invention, the magnon gain media is positioned in the thermostat, and wherein, is configured to make the temperature of magnon gain media to remain under the critical temperature thermostat.
In one embodiment of this invention, equipment (B) further comprises: the equipment that (B1) nonequilibrium electron is injected the magnon gain media; Wherein the propagation of nonequilibrium electron in the magnon gain media causes the generation of Nonequilibrium magnetic oscillator; And wherein the interaction between the Nonequilibrium magnetic oscillator causes the generation of terahertz radiation.
In one embodiment of this invention, equipment (B1) further comprises: (B1,1) pumps into nonequilibrium electron the equipment of magnon gain media.In another embodiment of the present invention, equipment (B1) further comprises: (B1, the 2) nonequilibrium electron that will polarize pumps into the equipment of magnon gain media.
In one embodiment of this invention, the equipment (C) of the frequency of adjustment terahertz radiation further comprises: the equipment that (C1) applies the external magnetic field; And the equipment that (C2) makes the value change of external magnetic field.
In another embodiment of the present invention, the equipment (C) of adjusting the frequency of terahertz radiation further comprises: the equipment that (C3) applies the external fluid static pressure; And the equipment that (C4) makes the value change of external fluid static pressure.
In an embodiment more of the present invention, the equipment (C) of adjusting the frequency of terahertz radiation further comprises: the equipment that (C5) applies external electrical field; And the equipment that (C6) makes the value change of external electrical field.
Description of drawings
This in conjunction with and the accompanying drawing that constitutes the some of specification embodiments of the invention are shown, and be used to explain principle of the present invention with specification.
Figure 1 shows that to be used for forceful electric power of the present invention-magnon interaction process (comparing) that wherein, the nonequilibrium electron that is excited in the downward last subband of spin is launched the magnon with big wave vector apace with electronics-electronics or electronics-phonon interaction.
Figure 2 shows that the energy that is used for the photon that the present invention launched under the situation of positive adjustability and the relation curve in magnetic field.
Figure 3 shows that the energy that is used for the photon that the present invention launched under the situation of negative adjustability and the relation curve of hydrostatic pressure.
Figure 4 shows that the energy that is used for the photon that the present invention launched under the situation of positive adjustability and the relation curve of carrier concentration.
Embodiment
To mention preferred embodiment of the present invention in detail below, accompanying drawing is depicted as its example.Though hereinafter will narrate the present invention, should be understood that not to be that plan limit the invention to these embodiment in conjunction with preferred embodiment.On the contrary, the present invention is intended to cover spirit and the alternative within the protection range, modification and the equivalent that can be included in as the claims qualification.In addition, having proposed a lot of specific detail in following of the present invention being described in detail, is in order to make the people can understand the present invention up hill and dale.But clearly, for a person skilled in the art, need not these specific detail and all can implement the present invention.In other cases, well-known method, process, parts and circuit are described in detail, in order to avoid unnecessarily fuzzy feature of the present invention.
Below some parts of Xiang Shuing are to represent according to the symbolic notation of particle and quasiparticle interaction, program, equation, branch, chart and other physical process.These narrations and representation are the means by technical staff's employing in this physics field of condensed state matter, so that the main idea of its work is conveyed to most effectively the others skilled in the art in this field.
#1 discloses as patent application, and electronics 20 and spin wave (magnon) 18 interact as shown in Figure 1.Externally the energy of the magnon in the magnetic field H is as follows:
Figure G2007800325923D00041
(equation 1)
Q herein is the magnon wave vector, and D is the magnon stiffness, and θ is
Figure G2007800325923D00042
And magnetic moment
Figure G2007800325923D00043
Between angle,
Figure G2007800325923D00044
(equation 2)
Figure G2007800325923D00045
(equation 3)
Wherein g is the g factor (g ≈ 2), and μ BBe Bohr magneton.
The nonequilibrium electron that is excited in downward the last subband (14 among Fig. 1) of spin is promptly launched magnon, moves on to the subband (12 among Fig. 1) that oneself spins up, thereby and then moves on to the bottom ballistic phonon of this subband.
#1 discloses as patent application, and the emission process of magnon is similar to the running of level Four laser system.More particularly, if the nonequilibrium electron of sufficient amount is pumped into downward the last subband of (injection) spin (Fig. 1 14), then the magnon quantity in narrow wave vector scope begins with pumping increase apace.Therefore, this system works as " magnon laser ".
According to the law of conservation of energy and the law of conservation of momentum, if the nonequilibrium electron energy ε that measures from the bottom of the downward subband 14 that spins pMore much smaller than exchange band gap Δ 16, the wave vector q of the magnon of then being launched 18 is in interval q 1≤ q≤q 2In, wherein
Figure G2007800325923D00046
p 0=(2m Δ) 1/2, p=(2m ε p) 1/2＜＜p 0, m is an electron effective mass.
At q 1,2Expression formula in, ignored
Figure G2007800325923D00047
With
Figure G2007800325923D00048
Magnitude (order) light maintenance on the occasion of.Clearance delta is the magnitude of a hundreds of meV.Therefore, Enough big, so that the Dq in (equation 1) 2The item ratio
Figure G2007800325923D00051
Much bigger, and ratio Much bigger.Here it is, and why we can ignore
Figure G2007800325923D00053
The influence that brings with the weak correlation of θ.In this case, (equation 1) can be rewritten as follows:
Figure G2007800325923D00054
(equation 4)
#1 discloses as patent application, and two merging with magnon of wave vector q and q ' have produced photon, and it has following wave vector
k → = q → + q → ′ (equation 5)
With and frequency v kBe equal to
ω q+ ω q'=v k=c k(equation 6)
Wherein c is the light velocity.
According to these laws, k is more much smaller than q, that is to say
q → = - q → ′ ; ω q=ω q' (equation 7)
Therefore, the frequency of the radiation that is produced is as follows:
Figure G2007800325923D00057
(equation 8)
Can introduce new parameter, i.e. the adjustability that causes of magnetic field:
t H = ∂ f r / ∂ H (equation 9)
According to (equation 8 and 9), t HFor:
(equation 10)
Therefore, magnetic field H=1T regulates about 6% 1THz radiation frequency.Figure 2 shows that the frequency f of the radiation of generation rRelation curve 30 with magnetic field H.
As an example, can consider that Curie temperature is T cThe THz radiation of the ferromagnetic semiconductor EuO of=70K.For EuO, m=0.35m 0, m wherein 0Be the free electron quality, (J.Shoenes and P.Wachter, Phys.Rev.B 9,3097 (1974)), clearance delta=0.6eV (J.Lascaray, J.P.Desfours, and M.Averous, Sol.St.Com.19,677 (1976)), the wave vector of excitation magnon
Figure G2007800325923D000510
Figure G2007800325923D000511
Spin wave stiffness D=10.810 -16Mevcm 2(L.Passel, O.W.Dietrich and J.Als-Nielsen, Phys.Rev.B14,4897,1976).This has provided the energy of excitation magnon at place, zero magnetic field:
Figure G2007800325923D000512
And frequency f m=ω/2 π ≈ 0.176THz.Therefore, in above-mentioned example, the frequency of the radiation that is produced is: f r| H=0=2f m=0.352THz.
When magnetic field H=1T (tesla), according to (equation 8), the frequency of the radiation of generation is equal to: f r| H=1T=0.408THz.So being changed to relatively of the frequency of the radiation that produces: [f r(H=1T)-f r(H=0)]/f r(H=0)=16%.
Also can introduce other three parameters.The adjustability that hydrostatic pressure causes:
t P = ∂ f r / ∂ P , (equation 11)
The adjustability that carrier concentration causes:
t c = ∂ f r / ∂ n c , (equation 12)
And the adjustability that causes of electric field:
t E = ∂ f r / ∂ E , (equation 13)
The adjustability t that hydrostatic pressure causes PCorrelation by stiffness D and hydrostatic pressure P is determined.For example, at T cThe ferromagnetic semiconductor CdCr of=130K 2Se 4In, T cReduce with pressure: ∂ T c / ∂ P = ( - ) 0.82 K / kbar . See also " Ferromagnetic Materials " (vol.3 is edited by E.P.Wolfarth, North-Holland Publishing Company, 1982) of R.P.Van Stapele.T cVariation relate to the correlation of exchange integral and lattice constant.Can expect that the correlation of D and P is similar to T cCorrelation with P.So, radiation frequency f rDepend on P (50 among Fig. 3).
In ferromagnetic semiconductor, stiffness D also can be depending on carrier concentration n cIf-RKKY (Ruderman-Kittel-Kasuya-Yosida) indirect exchange has very crucial contribution to D.If this kind situation, the adjustability T that carrier concentration causes c(equation 12) is by D and n cCorrelation determine.Figure 4 shows that the frequency f of the radiation of generation rWith carrier concentration n cRelation curve 60.
Some situation also, carrier concentration n cAnd stiffness D depends on external electrical field E.In these cases, can utilize the electric field that meets equation 13 to adjust the frequency of generation.
In one embodiment, adjustable generation of terahertz radiation of the present invention comprises (not shown): the magnon gain media (A) is provided; Wherein the magnon gain media is supported the generation of Nonequilibrium magnetic oscillator; (B) in the magnon gain media, produce terahertz radiation; And (C) by making changes in external parameters adjust the frequency of terahertz radiation.
Patent application #1 has intactly disclosed two steps (A) and (B).So this paper will concentrate on step (C): adjust the frequency of terahertz radiation by making changes in external parameters.
In one embodiment of this invention, the frequency of the terahertz radiation of generation changes because of the energy of Nonequilibrium magnetic oscillator and the correlation of external magnetic field value.See also (equation 9) and (equation 10).In this embodiment of the present invention, comprise (not shown) by making changes in external parameters adjust the step of the frequency of terahertz radiation (C): (C1) device of the present invention is applied external magnetic field (#1 discloses as patent application); And the value of external magnetic field is changed.The basic structure of device of the present invention (#1 discloses as patent application) comprising: (A) magnon gain media (for example ferromagnetic semiconductor); (B) nonequilibrium electron source; And (C) be configured to temperature with the magnon gain media and remain on thermostat under the critical temperature.For a person skilled in the art, how to apply external magnetic field and the value of the external magnetic field that is applied is changed is well-known.
In another embodiment of the present invention, the frequency of the terahertz radiation of generation changes because of the correlation of the value of the stiffness of Nonequilibrium magnetic oscillator and external fluid static pressure.See also (equation 11).In this embodiment of the present invention, further comprise by making changes in external parameters adjust the step of the frequency of terahertz radiation (C): (C3) device of the present invention is applied external fluid static pressure (#1 discloses as patent application); And the value of external fluid static pressure is changed.For a person skilled in the art, how to apply external fluid static pressure and the value of the external fluid static pressure that is applied is changed is well-known.
In an embodiment more of the present invention, the frequency of the terahertz radiation of generation changes because of the correlation of the value of the stiffness of Nonequilibrium magnetic oscillator and external electrical field.See also (equation 13).In this embodiment of the present invention, further comprise by making changes in external parameters adjust the step of the frequency of terahertz radiation (C): (C5) device of the present invention is applied external electrical field (#1 discloses as patent application); And the value of external electrical field is changed.For a person skilled in the art, how to apply external electrical field and the value of the external electrical field that is applied is changed is well-known.
For the purpose that illustrates and narrate, specific embodiment of the present invention has been shown above.They do not plan to be used as exhaustive or limit the invention to shown in definite form really, clearly,, can make a lot of remodeling and modification according to above-mentioned enlightenment.Select and narration embodiment is for principle of the present invention and actual application thereof can be described best, thereby make others skilled in the art can utilize the present invention and different embodiment best by the improvement of the various special-purposes that are suitable for expecting.Protection scope of the present invention should be limited by appended claim and their equivalent.

Claims (18)

1.一种可调太赫辐射产生方法，所述方法包括以下的步骤：1. A method for generating tunable terahertz radiation, said method comprising the following steps: (A)提供磁振子增益介质；其中所述磁振子增益介质支持非平衡磁振子的产生；其中所述磁振子增益介质被放置于恒温器内以使磁振子增益介质的温度保持在临界温度之下；(A) providing a magnon gain medium; wherein the magnon gain medium supports the generation of non-equilibrium magnons; wherein the magnon gain medium is placed in a thermostat to maintain the temperature of the magnon gain medium below a critical temperature Down; (B)将非平衡电子注入所述磁振子增益介质；其中，所述非平衡电子在所述磁振子增益介质中的传播导致所述非平衡磁振子的产生；以及其中，在所述非平衡磁振子之间的相互作用导致所述太赫辐射的产生；以及(B) injecting non-equilibrium electrons into the magnon gain medium; wherein propagation of the non-equilibrium electrons in the magnon gain medium results in the generation of the non-equilibrium magnons; and wherein, in the non-equilibrium interactions between magnons result in the generation of said terahertz radiation; and (C)通过使外部参数变化来调整所述太赫辐射的频率；其中所述外部参数是从以下构成的组中的一个选择的：外部磁场；外部电场；以及外部流体静压力。(C) adjusting the frequency of the terahertz radiation by varying an external parameter; wherein the external parameter is selected from one of the group consisting of: an external magnetic field; an external electric field; and an external hydrostatic pressure. 2.如权利要求1所述的方法，其特征在于所述步骤(A)进一步包括以下的步骤：2. The method according to claim 1, characterized in that said step (A) further comprises the following steps: (A2)从铁磁材料中选择所述磁振子增益介质。(A2) The magnon gain medium is selected from ferromagnetic materials. 3.如权利要求2所述的方法，其特征在于所述步骤(A2)进一步包括以下的步骤：3. The method according to claim 2, characterized in that said step (A2) further comprises the following steps: (A2，1)将包括被选铁磁材料的所述磁振子增益介质放置于所述恒温器内以使被选铁磁材料的温度保持在其居里温度之下。(A2,1) The magnon gain medium including the selected ferromagnetic material is placed in the thermostat to maintain the temperature of the selected ferromagnetic material below its Curie temperature. 4.如权利要求1所述的方法，其特征在于所述步骤(B)进一步包括以下的步骤：4. The method according to claim 1, characterized in that said step (B) further comprises the following steps: B1将非平衡电子泵入所述磁振子增益介质。B1 pumps non-equilibrium electrons into the magnon gain medium. 5.如权利要求1所述的方法，其特征在于所述步骤(B)进一步包括以下的步骤：5. The method according to claim 1, characterized in that said step (B) further comprises the following steps: B2将极化非平衡电子泵入所述磁振子增益介质。B2 pumps polarized non-equilibrium electrons into the magnon gain medium. 6.如权利要求1所述的方法，其特征在于所述步骤(B)进一步包括以下的步骤：6. The method according to claim 1, characterized in that said step (B) further comprises the following steps: B3将足够数量的极化非平衡电子泵入所述磁振子增益介质，其中，泵入的足够数量的极化非平衡电子导致在所述磁振子增益介质内产生非平衡磁振子。B3 pumps a sufficient number of polarized non-equilibrium electrons into the magnon gain medium, wherein the pumped sufficient number of polarized non-equilibrium electrons results in the generation of non-equilibrium magnons within the magnon gain medium. 7.如权利要求1所述的方法，其特征在于所述步骤(B)进一步包括以下的步骤：7. The method according to claim 1, characterized in that said step (B) further comprises the following steps: B4将阈值数量的极化非平衡电子泵入所述磁振子增益介质，其中，泵入的阈值数量的极化非平衡电子足以在所述磁振子增益介质内产生磁振子雪崩效应。B4 pumping a threshold amount of polarized non-equilibrium electrons into the magnon gain medium, wherein the pumped threshold amount of polarized non-equilibrium electrons is sufficient to generate a magnon avalanche effect within the magnon gain medium. 8.如权利要求1所述的方法，其特征在于通过使外部参数变化来调整太赫辐射的频率的步骤(C)进一步包括以下的步骤：8. The method of claim 1, wherein the step (c) of adjusting the frequency of the terahertz radiation by changing the external parameters further comprises the steps of: (C1)施加外部磁场；以及(C1) applying an external magnetic field; and (C2)使所述外部磁场的值改变；其中所产生的太赫辐射的频率因所述非平衡磁振子的能量与外部磁场的值的相关性而改变。(C2) changing the value of the external magnetic field; wherein the frequency of the generated terahertz radiation is changed due to the correlation between the energy of the non-equilibrium magnon and the value of the external magnetic field. 9.如权利要求1所述的方法，其特征在于通过使外部参数变化来调整太赫辐射的频率的步骤(C)进一步包括以下的步骤：9. The method of claim 1, wherein the step (c) of adjusting the frequency of the terahertz radiation by changing the external parameters further comprises the steps of: (C3)施加外部流体静压力；以及(C3) apply external hydrostatic pressure; and (C4)使所述外部流体静压力的值改变；其中所产生的太赫辐射的频率因所述非平衡磁振子的劲度与外部流体静压力的值的相关性而改变。(C4) changing the value of the external hydrostatic pressure; wherein the frequency of the generated terahertz radiation is changed due to the correlation between the stiffness of the unbalanced magnon and the value of the external hydrostatic pressure. 10.如权利要求1所述的方法，其特征在于通过使外部参数变化来调整太赫辐射的频率的步骤(C)进一步包括以下的步骤：10. The method of claim 1, wherein the step (c) of adjusting the frequency of the terahertz radiation by varying the external parameters further comprises the steps of: (C5)施加外部电场；以及(C5) applying an external electric field; and (C6)使所述外部电场的值改变；其中所产生的太赫辐射的频率因所述非平衡磁振子的劲度与外部电场的值的相关性而改变。(C6) changing the value of the external electric field; wherein the frequency of the generated terahertz radiation is changed due to the correlation between the stiffness of the unbalanced magnon and the value of the external electric field. 11.一种可调太赫辐射产生装置，其包括：11. An adjustable terahertz radiation generating device, comprising: (A)磁振子增益介质；其中所述磁振子增益介质支持非平衡磁振子的产生；其中所述磁振子增益介质被放置于恒温器内以使磁振子增益介质的温度保持在临界温度之下；(A) A magnon gain medium; wherein the magnon gain medium supports the generation of non-equilibrium magnons; wherein the magnon gain medium is placed in a thermostat to maintain the temperature of the magnon gain medium below a critical temperature ; (B)用于将非平衡电子注入所述磁振子增益介质的设备；其中，所述非平衡电子在所述磁振子增益介质中的传播导致所述非平衡磁振子的产生；以及其中，在所述非平衡磁振子之间的相互作用导致所述太赫辐射的产生；以及(B) an apparatus for injecting non-equilibrium electrons into the magnon gain medium; wherein propagation of the non-equilibrium electrons in the magnon gain medium results in the generation of the non-equilibrium magnons; and wherein, at the interaction between the non-equilibrium magnons results in the generation of the terahertz radiation; and (C)用于调整所产生的太赫辐射的频率的设备，还包括用于使外部参数变化的设备；其中所述外部参数是从以下构成的组中的一个选择的：外部磁场；外部电场；以及外部流体静压力。(C) means for adjusting the frequency of the generated terahertz radiation, further comprising means for varying an external parameter; wherein said external parameter is selected from one of the group consisting of: an external magnetic field; an external electric field ; and external hydrostatic pressure. 12.如权利要求11所述的装置，其特征在于所述装置进一步包括：12. The device of claim 11, wherein the device further comprises: (D)恒温器，其中，所述磁振子增益介质被放置于所述恒温器内，以及其中，所述恒温器被配置成使所述磁振子增益介质的温度保持在临界温度之下。(D) A thermostat, wherein the magnon gain medium is placed within the thermostat, and wherein the thermostat is configured to maintain the temperature of the magnon gain medium below a critical temperature. 13.如权利要求11所述的装置，其特征在于所述设备(B)进一步包括：13. The apparatus according to claim 11, characterized in that said device (B) further comprises: (B1)用于将非平衡电子泵入所述磁振子增益介质的设备。(B1) A device for pumping non-equilibrium electrons into said magnon gain medium. 14.如权利要求11所述的装置，其特征在于所述设备(B)进一步包括：14. The apparatus according to claim 11, characterized in that said device (B) further comprises: (B2)用于将极化非平衡电子泵入所述磁振子增益介质的设备。(B2) A device for pumping polarized non-equilibrium electrons into said magnon gain medium. 15.如权利要求11所述的装置，其特征在于用于调整太赫辐射的频率的设备(C)进一步包括：15. The device according to claim 11, characterized in that the device (C) for adjusting the frequency of the terahertz radiation further comprises: (C1)用于施加外部磁场的设备；以及(C1) equipment for applying an external magnetic field; and (C2)用于使所述外部磁场的值改变的设备。(C2) A device for changing the value of the external magnetic field. 16.如权利要求11所述的装置，其特征在于用于调整太赫辐射的频率的设备(C)进一步包括：16. The device according to claim 11, characterized in that the device (C) for adjusting the frequency of terahertz radiation further comprises: (C3)用于施加外部流体静压力的设备；以及(C3) Equipment for applying external hydrostatic pressure; and (C4)用于使所述外部流体静压力的值改变的设备。(C4) A device for changing the value of the external hydrostatic pressure. 17.如权利要求11所述的装置，其特征在于用于调整太赫辐射的频率的设备(C)进一步包括：17. The device according to claim 11, characterized in that the device (C) for adjusting the frequency of terahertz radiation further comprises: (C5)用于施加外部电场的设备；以及(C5) Equipment for applying an external electric field; and (C6)用于使所述外部电场的值改变的设备。(C6) A device for changing the value of the external electric field. 18.一种用于可调太赫辐射产生的装置，所述装置包括：18. An apparatus for tunable terahertz radiation generation, said apparatus comprising: (A)磁振子增益介质；其中所述磁振子增益介质支持非平衡磁振子的产生；其中所述磁振子增益介质被放置于恒温器内以使磁振子增益介质的温度保持在临界温度之下；其中非平衡电子被注入所述磁振子增益介质；其中，所述非平衡电子在所述磁振子增益介质中的传播导致所述非平衡磁振子的产生；以及其中，在所述非平衡磁振子之间的相互作用导致所述太赫辐射的产生；以及(A) A magnon gain medium; wherein the magnon gain medium supports the generation of non-equilibrium magnons; wherein the magnon gain medium is placed in a thermostat to maintain the temperature of the magnon gain medium below a critical temperature ; wherein non-equilibrium electrons are injected into the magnon gain medium; wherein propagation of the non-equilibrium electrons in the magnon gain medium results in the generation of the non-equilibrium magnons; and wherein, in the non-equilibrium magnon the interaction between the oscillators results in the generation of said terahertz radiation; and (B)用于调整所产生的太赫辐射的频率的设备，还包括用于使外部参数变化的设备；其中所述外部参数是从以下构成的组中的一个选择的：外部磁场；外部电场；以及外部流体静压力。(B) means for adjusting the frequency of the generated terahertz radiation, further comprising means for varying an external parameter; wherein said external parameter is selected from one of the group consisting of: an external magnetic field; an external electric field ; and external hydrostatic pressure.
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