CN101488535A - Preparation method of back electrode of solar cell chip - Google Patents
Preparation method of back electrode of solar cell chip Download PDFInfo
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- CN101488535A CN101488535A CNA200810158150XA CN200810158150A CN101488535A CN 101488535 A CN101488535 A CN 101488535A CN A200810158150X A CNA200810158150X A CN A200810158150XA CN 200810158150 A CN200810158150 A CN 200810158150A CN 101488535 A CN101488535 A CN 101488535A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a preparation method of a back electrode of a solar cell chip, which comprises the steps of etching a plurality of discontinuous grooves with the groove depth of 20-150 mu m on the back surface of a substrate of the solar cell chip; then evaporating back electrode metal on the back of the substrate through a metal evaporation process, wherein the part of the metal in the groove and the part of the metal on the back of the substrate are integrally formed into a back electrode; the back of the substrate of the compound solar cell chip is etched with a plurality of non-continuous grooves with regular or irregular groove depth, shape, size and arrangement mode, the grooves of the electrode metal are filled by an evaporation process and are integrally formed with the electrode metal part evaporated on the back of the substrate to form a back electrode, and under the condition of not changing the thickness of the substrate and reducing the strength of the substrate, because the metal electrodes in the grooves of the substrate are dense, the series resistance of the chip is greatly reduced while the heat conduction channel in the chip is shortened, and therefore the heat dissipation performance and the photoelectric conversion efficiency of the solar cell chip are greatly improved.
Description
Technical field
The present invention relates to the photocell electrode, be applied to the preparation method of a kind of solar cell chip back electrode of light-focusing type photovoltaic generating system especially.
Background technology
Be used for the used photocell of high power concentrator type photovoltaic generating system and be generally efficient compound semiconductor solar cell, as III-V family unijunction, multijunction solar cell.Compound semiconductor solar cell generally adopts vapor phase epitaxy technique or liquid phase epitaxial technique each layer of extension solar cell structure successively on substrates such as Ge, Si, GaAs or YP, utilizes the solar cell epitaxial wafer of the good structure of extension to be prepared into solar cell chip then.As Fig. 1 is vague generalization compound solar cell chip structural representation, solar cell chip the surface with on the back side prepares respectively metallic surface electrode 1 and back electrode 4 (layer structure be connected mode), solar cell chip comprises thick substrate layer 3 and battery layers 2, and battery layers can be that unijunction also can be many knots.For the direct band gap compound that much is used for solar cell, the absorption degree of depth of sunlight is very shallow, therefore effectively the relative substrate of thickness of battery layers is extremely thin, the sunlight that enters solar cell is all absorbed by battery layers basically, battery layers converts a part wherein to electric energy, a part converts heat energy to and makes solar cell temperature raise in addition, and photoelectric conversion efficiency seriously descends, and its order of severity is enough to make solar cell piece to burn.Back electrode on the solar cell chip simultaneously is encapsulated on the heat sink substrate, and heat is by substrate guiding back electrode and heat sink substrate, so the heat conductivility of substrate largely influences the heat radiation of solar cell chip; Therefore with regard to present light-focusing type solar cell, the poor heat radiation of solar cell causes that the low problem of photoelectric conversion efficiency is kept away and needs to be resolved hurrily.
According to heat conducting fundamental formular Q=KA Δ T/ Δ L (wherein Q represent heat conducting heat, K be that the area (or contact area of two articles) that conducts heat of the coefficient of heat conduction, the A representative of material, temperature difference, the Δ L that Δ T represents two ends then are the distances at two ends) as can be known, the heat conductivility of restriction substrate is except the conductive coefficient of itself, and the thickness of substrate also is key factor wherein.Above-mentioned in view of the above formula, the big or small same coefficient of heat conduction, the hot heat transfer area of heat transferred are directly proportional, and same distance is inversely proportional to.The coefficient of heat conduction is high more, heat transfer area is big more, the distance of transmission is short more, so heat conducting energy is just high more, the also just easy more heat (promptly heat radiation is fast more) of taking away, the distance of the shortening heat transmission of trying one's best under the situation that the coefficient of heat conduction therefore certain at chip size, substrate can't change can reach the purpose of quick heat radiating; If but simple attenuate substrate thickness can make solar cell piece cross thin and fragmentation takes place in other technical processs easily, make the product yield reduce greatly; And the too thick series resistance that can increase solar cell chip of substrate influences the fill factor, curve factor of solar cell chip, reduces the photoelectric conversion efficiency of solar cell chip.
Summary of the invention
For solving used photronic heat radiation of above-mentioned light-focusing type photovoltaic generating system and photoelectric conversion efficiency problem, the present invention is intended to propose do not changing under the thickness situation of sun chip, shortens the preparation method that its thermal conduction path also improves a kind of solar cell chip back electrode of its photoelectric conversion efficiency simultaneously.
The present invention addresses the above problem the technical scheme that is adopted: a kind of preparation method of solar cell chip back electrode is characterized in that:
1. the substrate back at solar cell chip etches the noncontinuity groove that several groove depths are 20 μ m～150 μ m;
2. at substrate back by metal evaporation technology evaporation back electrode metal, the part of this metal in groove with one-body molded in the part of substrate back be back electrode.
Solar cell chip of the present invention is unijunction or multijunction compound solar cell chip, and its substrate is thicker, can make darker electrode groove and can not be corrupted to the P-N knot of chip; Before the substrate etch groove, form pattern at substrate surface by photoetching process earlier; Substrate groove pattern, its shape, size and arrangement mode are rules or irregular; Groove etching process using dry etching of the present invention or wet etching; Back electrode of the present invention also can adopt the technology of sputter or plating back electrode metal to form at the back side of substrate.
Compare with the electrode preparation of traditional solar cell chip and the invention has the beneficial effects as follows:
1. the present invention is not high for the required precision of the photoetching of substrate, and the shape of substrate back groove pattern, size and arrangement mode all do not have special requirement;
2. further groove etch depth of the present invention is darker, in order to shorten at least tens microns of passage of heat requirement etch depths, groove is not leptosomatic, and the groove (hole, hole) that etches at the substrate certain position just, substrate strength not have change to make to be not easy to take place fragmentation substantially in other technical processs;
What 3. the present invention was primarily aimed at is to be used for light-focusing type photovoltaic generating system compound solar cell chip, and passage of heat is shorter under the optically focused condition, makes that the heat of substrate is conducted quickly;
4. the trench process of carving on the other types solar cell chip technology for preparing electrode is in fact very little for the influence of heat radiation because the substrate trenches degree of depth has only several microns, does not have the excellent results that the present invention reaches.
Description of drawings
Fig. 1 is a conventional compounds solar cell chip structural representation;
Fig. 2 be utilize the inventive method preparation the solar cell chip structural representation;
Fig. 3 is an etched groove schematic diagram on the inventive method technology substrate;
Among the figure: 1. surface electrode; 2. battery layers; 3. substrate; 4. back electrode; 5. groove;
Embodiment
The present invention is further described below in conjunction with drawings and Examples.
As shown in Figure 2, light-focusing type solar cell chip of the present invention is unijunction or multijunction compound solar cell chip; Solar cell chip comprises 3 layers of thick substrates and battery layers 2, and battery layers 2 can be that unijunction also can be many knots, and preparation has surface electrode 1 on the battery layers 2 of battery chip; Before substrate 3 etched recesses 5 of solar cell chip, earlier at substrate 3 surface-coated photoresist coatings, on photoresist coating, prepare light shield then, form groove 5 patterns by photoetching process on substrate 3 surfaces, substrate 3 back etcheds at solar cell chip go out the noncontinuity groove 5 that several groove depths are 20 μ m～150 μ m then, groove 5 etch processs preferentially adopt dry etching, as shown in Figure 3, substrate 3 groove patterns of this technology, its shape, size and arrangement mode are rules or irregular, and groove 5 minispread more is close more good more; Then at substrate 3 back sides by metal evaporation technology evaporation back electrode metal, the part of this metal in groove with one-body molded in the part of substrate back be back electrode 4, the technology that back electrode 4 of the present invention also can adopt sputter or electroplate the back electrode metal forms at the back side of substrate.
Shape, size and the arrangement mode of groove 5 patterns of substrate of the present invention is rule or irregular, so craft precision is low; Groove of the present invention 5 is darker, metal electrode in the groove 5 can shorten the passage of heat of substrate 3, and intensive groove metal electrode make the series resistance of solar cell chip reduce greatly, and the heat of substrate 3 can be conducted fast, improve the photoelectric conversion efficiency of light-focusing type solar cell chip.
The technology that the ditch groove is arranged on the solar cell chip technology for preparing electrode of other types (non-compound solar cell chip) at present, particularly in the preparation of gate electrode, in order to make gate electrode shading area reduce, its gate electrode narrow thin (width has only several microns), and be to improve its solderability and reduce series resistance to require gate electrode thicker, this has brought difficulty for the preparation technology of gate electrode.Utilize ditch groove technology on the battery sheet, to carve several microns dark elongated channels in advance, technology such as utilize photoetching, metal evaporation and peel off, make the metal gate electrode preparation in groove, thereby realize the narrow thin and thickness that needs of gate electrode, its do not solve chip substrate thermal conduction path shortening and improve its distribution performance, also do not change the resistance of the series resistance of chip.Therefore this method and the present invention who utilizes narrow fine groove to prepare gate electrode compares, no matter be preparation technology's requirement, purpose or the effect that finally will reach all has bigger difference.
Claims (5)
1. the preparation method of a solar cell chip back electrode is characterized in that:
1. the substrate back at solar cell chip etches the noncontinuity groove that several groove depths are 20 μ m～150 μ m;
2. at substrate back by metal evaporation technology evaporation back electrode metal, the part of this metal in groove with one-body molded in the part of substrate back be back electrode.
2. the preparation method of a kind of solar cell chip back electrode according to claim 1, it is characterized in that: described solar cell chip is unijunction or multijunction compound solar cell chip.
3. the preparation method of a kind of solar cell chip back electrode according to claim 1 is characterized in that: before the substrate etch groove, form pattern at substrate surface by photoetching process earlier; Substrate groove pattern, its shape, size and arrangement mode are rules or irregular.
4. the preparation method of a kind of solar cell chip back electrode according to claim 1 and 2 is characterized in that: groove etching process using dry etching or wet etching.
5. the preparation method of a kind of solar cell chip back electrode according to claim 1 is characterized in that: the technology that back electrode also can adopt sputter or electroplate the back electrode metal forms at the back side of substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200810158150XA CN101488535A (en) | 2008-10-22 | 2008-10-22 | Preparation method of back electrode of solar cell chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200810158150XA CN101488535A (en) | 2008-10-22 | 2008-10-22 | Preparation method of back electrode of solar cell chip |
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| CN101488535A true CN101488535A (en) | 2009-07-22 |
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| CNA200810158150XA Pending CN101488535A (en) | 2008-10-22 | 2008-10-22 | Preparation method of back electrode of solar cell chip |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102386264A (en) * | 2010-09-01 | 2012-03-21 | 杜邦太阳能有限公司 | Thin film photoelectric conversion module |
| CN102437249A (en) * | 2011-12-21 | 2012-05-02 | 中电电气（南京）光伏有限公司 | Preparation method of local contact back electric field of back region contact crystalline silicon solar cell |
| TWI470815B (en) * | 2011-11-17 | 2015-01-21 | Chung Wen Lan | Silicon-based solar cell and method of fabricating the same |
| CN109638087A (en) * | 2018-10-31 | 2019-04-16 | 北京铂阳顶荣光伏科技有限公司 | Improve the method and photovoltaic cell of photovoltaic cell back electrode and absorbed layer adhesive force |
| CN112018198A (en) * | 2019-05-31 | 2020-12-01 | 东泰高科装备科技有限公司 | Solar cell substrate structure, solar cell and preparation method thereof |
| CN113889837A (en) * | 2021-09-14 | 2022-01-04 | 上海新微半导体有限公司 | Semiconductor photoelectric device and preparation method thereof |
| CN117712201A (en) * | 2023-12-27 | 2024-03-15 | 江苏联格科技有限公司 | A silicon-based high saturation detector and its preparation method |
-
2008
- 2008-10-22 CN CNA200810158150XA patent/CN101488535A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102386264A (en) * | 2010-09-01 | 2012-03-21 | 杜邦太阳能有限公司 | Thin film photoelectric conversion module |
| TWI470815B (en) * | 2011-11-17 | 2015-01-21 | Chung Wen Lan | Silicon-based solar cell and method of fabricating the same |
| CN102437249A (en) * | 2011-12-21 | 2012-05-02 | 中电电气（南京）光伏有限公司 | Preparation method of local contact back electric field of back region contact crystalline silicon solar cell |
| CN109638087A (en) * | 2018-10-31 | 2019-04-16 | 北京铂阳顶荣光伏科技有限公司 | Improve the method and photovoltaic cell of photovoltaic cell back electrode and absorbed layer adhesive force |
| CN112018198A (en) * | 2019-05-31 | 2020-12-01 | 东泰高科装备科技有限公司 | Solar cell substrate structure, solar cell and preparation method thereof |
| CN113889837A (en) * | 2021-09-14 | 2022-01-04 | 上海新微半导体有限公司 | Semiconductor photoelectric device and preparation method thereof |
| CN117712201A (en) * | 2023-12-27 | 2024-03-15 | 江苏联格科技有限公司 | A silicon-based high saturation detector and its preparation method |
| CN117712201B (en) * | 2023-12-27 | 2025-03-11 | 江苏联格科技有限公司 | Silicon-based high-saturation detector and preparation method thereof |
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Open date: 20090722 |