CN101483409A - Low noise amplifier using multipath noise counteraction - Google Patents
Low noise amplifier using multipath noise counteraction Download PDFInfo
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Abstract
The present invention discloses a low noise amplifier circuit adopting multiplex noise counteract, wherein the low noise amplifier includes a DC connected Balanced to Unbalanced transformer (Balun), a pair of cross coupling connected input transistor with source electrode respectively direct connected to two balancing ends of the Balanced to Unbalanced transformer and the grid respectively AC coupled connected to two balancing ends that different with Balanced to Unbalanced transformer; a pair of transistor load with the grid respectively AC coupled connected to two balancing ends of the Balanced to Unbalanced transformer, and two pairs of electric resistance-capacitance (R-C) high-pass filter network forms cross coupling configuration by connecting the input transistor, two pairs of electric resistance-capacitance high-pass filter network AC couples the input signal to grid of the transistor load tube. The main purpose of the present invention is to realize low noise coefficient and high linearity through multiplex noise counteract technology only consuming low power consumption at the same time.
Description
Technical field
The present invention relates to a kind of low noise amplifier, relate in particular to the amplifier circuit in low noise of a kind of low-power consumption, high linearity, belong to technical field of radio frequency integrated circuits.
Background technology
Along with the development of wireless communication technique and integrated circuit technology, the research of low noise amplifier has obtained paying close attention to widely.Low noise amplifier is the important component part of radio frequency integrated circuit receiver front end, is mainly used in to amplify the small-signal confession back level resume module that antenna receives.Low noise amplifier not only needs to have very low noise factor, also needs to have higher linearity, and consumes few electric current of trying one's best.Traditional low noise amplifier adopts the common source structure for amplifying of band source inductance feedback usually, this structure can access lower noise factor, but needs to adopt on-chip inductor, has increased chip area and cost, the linearity of circuit is also relatively poor simultaneously, and application has been subjected to limitation.Adopt the low noise amplifier of noise cancellation technique can realize very low noise factor in the frequency band of broad, but the power consumption of circuit is excessive, the linearity is also relatively poor.And adopt the low noise amplifier of common gate structure to have higher linearity and lower power consumption, but noise factor is bigger, is difficult to satisfy requirement of actual application.
Fig. 1 is a differential capacitance cross-couplings common gate structure low noise amplifier.Differential signal is from the source electrode input of transistor M11 and M12, drain electrode output.Source electrode direct current biasing part 101 is made up of two identical differential impedance Z11 and Z12, and wherein Z11 and Z12 can be resistance, inductance or active electric current mirror; Loading section 103 is made up of two identical impedance Z 13 and Z14, and wherein Z13 and Z14 can be the passive networks of resistance, inductance or the arbitrary form be made up of RLC resistance-inductance-capacitance.102 parts among the figure are cross-linked electric capacity-resistance high-pass filtering network, purpose is to be ac-coupled to relative transistorized grid with being carried in the input signal of transistor M11 with the M12 source electrode, make and be carried in the grid of transistor M11 and M12 and the voltage multiplication between the source electrode, thereby reach the gain that increases circuit, the purpose of noise-reduction coefficient.Input impedance and the source impedance of supposing circuit are complementary, and only consider the noise of input transistors, and the theoretical lowest noise coefficient (NF) of this circuit is
F＝1+γ/2 (1)
Wherein parameter γ is the raceway groove noise factor of metal-oxide-semiconductor.
Yet the shortcoming of sort circuit structure mainly is:
1, the noise contribution of source electrode direct current biasing part 101 and loading section 103 is very big usually, can not ignore, and this actual noise coefficient that just causes circuit is usually much larger than theoretical minimum value;
When 2, this circuit was used for the narrow radio frequency receiver system, source electrode direct current biasing part 101 and loading section 103 needed to adopt on-chip spiral inductor to obtain preferable performance usually, and this can make design difficulty and chip area improve, and cost is higher; And when this circuit application was in the wideband radio receiver system, 101 parts and 103 parts can only adopt resistance or transistor active device, and are bigger to the noise contribution of entire circuit, and performance often is difficult to satisfy actual application requirements.
Summary of the invention
In order to address the above problem, the present invention proposes the amplifier circuit in low noise structure after a kind of improve, this structure is by introducing extra circuit pathways, obtain offsetting at output after can making the noise of input transistors by many different circuit pathways, thereby the reduction of maximum possible the noise factor and the power consumption of circuit, the linearity of circuit, impedance matching property etc. have also obtained raising to a certain degree simultaneously, and this circuit structure is applicable to arrowband and wide band radio-frequency system simultaneously.
A kind of low noise amplifier that adopts multipath noise counteraction comprises: input crystal tube portion 202, loading section 203; Input crystal tube portion 202 is made up of two identical transistor M21 and M22, is used for amplifying signal; Loading section 203 is made up of two identical transistor M23 and M24, for input transistors 202 parts provide load, its source electrode is connected to the drain electrode of input transistors M21 and M22 respectively, difference output end Vo, its drain electrode is connected to power supply, and the direct grid current current potential is connected to power supply; Also comprise, balance/unbalance transformer 201, cross-couplings part 204, signal is just being presented part 205;
Balance/unbalance transformer 201, the single-ended signal source that is connected to of its 1st end, two balance end the 2nd ends and the 3rd end are connected to the source electrode of input transistors M21 and M22, the 4th end and the 5th end ground connection respectively;
Signal is just being presented part 205, is made up of two resistance capacitance high-pass filtering circuit C23-R23 and C24-R24, and extra signal path and noise cancellation path is provided, and improves the gain of circuit under the prerequisite that does not consume extra power consumption, noise-reduction coefficient.
Described input crystal tube portion 202, its direct grid current current potential determines that by bias voltage Vb source electrode is connected to two balance end of balance/unbalance transformer respectively, drain electrode is connected to load and output end vo.
Two balance end of balance/unbalance transformer are connected with the input transistors direct current, thereby under the situation that does not consume the direct current pressure drop, provide DC channel for input transistors, no longer need extra bias device (resistance, inductance or metal-oxide-semiconductor current mirror) for input transistors provides direct current biasing, no longer need input signal AC coupled electric capacity to the required sheet of chip simultaneously.
The method that the source electrode of difference input transistors is connected with grid employing cross-couplings, be each input transistors source electrode respectively with situation that two balance end of balanced-unbalanced transformer link to each other under, by two resistance-capacitance high-pass filtering circuits differential input signal is coupled to relative transistorized grid respectively, thereby make under the identical prerequisite of dc power, AC-input voltage multiplication between the grid source of each input transistors, under the constant prerequisite of circuit power consumption, obtained double mutual conductance like this, made that the circuit noise coefficient reduces, the linearity increases.
The N transistor npn npn of two diode types of attachment is adopted in circuit load, can improve the circuit linearity, stablizes output dc voltage.In addition, the grid of two load transistors links to each other with two balance end of balanced-unbalanced transformer respectively by the resistance-capacitance high-pass filtering circuit, provides an extra raising circuit gain, the path of noise-reduction coefficient under the prerequisite that consumes same electric current.
Adopt two pairs of resistance-capacitance high-pass filtering networks with the grid of differential input signal AC coupled, to form capacitive cross coupling configuration to input transistors on the other side.
Adopt two pairs of resistance-capacitance high-pass filtering networks with the grid of differential input signal AC coupled, for circuit provides an extra positive feedthrough road from being input between the output to load transistor.Can under the constant prerequisite of circuit power consumption, improve voltage gain, can offset the noise contribution of input pipe simultaneously, reduce the circuit noise coefficient.
Described transistor is mos field effect transistor (MOSFET), or bipolar junction transistor (BJT).
Described amplifier circuit in low noise structure is applicable to arrowband and wide band radio-frequency system.
Adopt two pairs of resistance-capacitance high-pass filtering networks with the grid of differential input signal AC coupled, for circuit provides an extra positive feedthrough road from being input between the output to load transistor.Can under the constant prerequisite of circuit power consumption, improve voltage gain, can offset the noise contribution of input pipe simultaneously, reduce the circuit noise coefficient.
Description of drawings
Fig. 1 is a differential capacitance cross-couplings common gate structure low noise amplifier;
Fig. 2 is the amplifier circuit in low noise that comprises the outer Balun of sheet of introduction of the present invention;
Fig. 3 is the schematic diagram of balanced-unbalanced transformer to circuit noise reduction effect;
Fig. 4 is the schematic diagram of capacitive cross coupled structure to circuit noise reduction effect;
Fig. 5 is the schematic diagram of the positive feedthrough of electric capacity road to circuit noise reduction effect;
Embodiment
Further specifically describe the present invention below in conjunction with accompanying drawing.
Figure 2 shows that physical circuit figure of the present invention.Comprise among the figure:
Balance/unbalance transformer 201 can adopt integrated mode on outer discrete component of sheet or the sheet.Its 1st end (single-ended) is connected to signal source, and the 2nd end and the 3rd end (two balance end) are connected to source electrode, the 4th end and the 5th end ground connection of input transistors M21 and M22 respectively.
Two balance end of balance/unbalance transformer 201 are connected with the input transistors direct current, thereby under the situation that does not consume the direct current pressure drop, provide DC channel for input transistors, no longer need extra bias device (resistance, inductance or metal-oxide-semiconductor current mirror) for input transistors provides direct current biasing, no longer need input signal AC coupled electric capacity to the required sheet of chip simultaneously.
Input crystal tube portion 202 is made up of two identical transistor M21 and M22, is used for amplifying signal.Its direct grid current current potential determines that by bias voltage Vb source electrode is connected to two balance end of balance/unbalance transformer respectively, and drain electrode is connected to load and output end vo.
The method that the source electrode of difference input transistors 202 is connected with grid employing cross-couplings, be each input transistors source electrode respectively with situation that two balance end of balanced-unbalanced transformer link to each other under, by two resistance-capacitance high-pass filtering circuits differential input signal is coupled to relative transistorized grid respectively, thereby make under the identical prerequisite of dc power, AC-input voltage multiplication between the grid source of each input transistors, under the constant prerequisite of circuit power consumption, obtained double mutual conductance like this, made that the circuit noise coefficient reduces, the linearity increases.
Loading section 203 is made up of two identical transistor M23 and M24, for input transistors 202 parts provide load.Its source electrode is connected to the drain electrode (difference output end Vo) of input transistors M21 and M22 respectively, and its drain electrode is connected to power supply, and the direct grid current current potential is connected to power supply.
The N transistor npn npn of two diode types of attachment is adopted in circuit load, can improve the circuit linearity, stablizes output dc voltage.In addition, the grid of two load transistors links to each other with two balance end of balanced-unbalanced transformer respectively by the resistance-capacitance high-pass filtering circuit, provides an extra raising circuit gain, the path of noise-reduction coefficient under the prerequisite that consumes same electric current.
Adopt two pairs of resistance-capacitance high-pass filtering networks with the grid of differential input signal AC coupled, to form capacitive cross coupling configuration to input transistors on the other side.
Signal is just being presented part 205, is made up of two resistance capacitance high-pass filtering circuit C23-R23 and C24-R24, its objective is the signal path and the noise cancellation path that provide extra, improves the gain of circuit under the prerequisite that does not consume extra power consumption, noise-reduction coefficient.
The raceway groove thermal noise of input transistors M21 and M22 (Channel Thermal Noise) is traditional common source or the main noise source that is total to grid type low noise amplifier.The raceway groove thermal noise can equivalence be a noise current from the transistor drain to the source electrode, and this electric current produces two noise voltages respectively in transistor drain and source electrode.The noise voltage of drain electrode affacts the output end vo of circuit, makes the circuit noise coefficient very big.In order to reduce the noise factor of circuit, the noise voltage of transistor source can be delivered to output by extra circuit pathways, obtain the noise voltage opposite with the transistor drain phase place.Because there is correlation in the two, therefore can cancel out each other, thereby the noise amplitude of reduction output makes the noise factor of circuit be reduced.For the circuit of difference output, only need to reduce the differential mode noise amplitude of output, can reach the purpose that reduces the circuit noise coefficient.
In order to reduce the noise contribution of input pipe M21 and M22 as far as possible, the present invention has adopted three path and methods that reduce noise.To describe respectively below:
1, balanced-unbalanced transformer 201:
Balanced-unbalanced transformer to the reduction action principle of circuit noise as shown in Figure 3.Can see that by figure because the effect of intercoupling of each terminal of balanced-unbalanced transformer, the noise voltage of transistor M21 source end can be coupled to the source end of transistor M22.For desirable balanced-unbalanced transformer, the amplitude of the noise voltage of transistor M22 source end and the noise voltage of transistor M21 source end is identical and phase place is opposite.And the common grid structure for amplifying of the noise voltage of transistor M22 source end by transistor M22 further is amplified to output, shown in the red dotted line among Fig. 3.Differential mode noise at two difference output ends is reduced like this, thereby has reduced the noise factor of circuit.
2, capacitive cross coupling:
The capacitive cross coupled structure to the reduction action principle of circuit noise as shown in Figure 4.Can be seen that by figure the noise voltage of transistor M21 source end is coupled to the grid of transistor M22 by electric capacity-resistor network C21-R21, the common source structure for amplifying by transistor M22 is amplified to output again, shown in the red dotted line among Fig. 4.Because capacitive coupling keeps phase invariant, and the common source amplification makes phase place opposite, therefore can obtain the common-mode noise of homophase equally at output, has reduced the output differential mode noise, thereby has reduced the noise factor of circuit.
3, the positive feedthrough of electric capacity road
The positive feedthrough of electric capacity road to the reduction action principle of circuit noise as shown in Figure 5.Can see that by figure the noise voltage of transistor M21 source end is coupled to the grid of transistor M23 by electric capacity-resistor network C23-R23, follow structure by the source electrode of transistor M23 again and be amplified to output, shown in the red dotted line among Fig. 5.Because capacitive coupling and source electrode are followed and are all kept phase invariant, therefore can obtain the common-mode noise of homophase equally at output, reduce the output differential mode noise, thereby reduced the noise factor of circuit.
Transistor among the present invention both can be a mos field effect transistor (MOSFET), also was applicable to bipolar junction transistor (BJT) circuit
After adopting the method for above-mentioned three kinds of reduction circuit noise coefficients, the noise factor of circuit is:
Wherein
Be the noise contribution of input transistors,
Noise contribution for load transistor.Compare with formula (1), the noise contribution of input transistors has reduced by 10 times.
The present invention is by introducing extra circuit pathways, many noise cancellation paths, obtain offsetting at output after can making the noise of input transistors by many different circuit pathways, thereby the reduction of maximum possible the noise factor and the power consumption of circuit, simultaneously the linearity of circuit, impedance matching property etc. have also obtained raising to a certain degree.
It should be noted that at last, above embodiment is only unrestricted in order to technical scheme of the present invention to be described, although the present invention is had been described in detail with reference to preferred embodiment, those of ordinary skill in the art is to be understood that, can make amendment or be equal to replacement technical scheme of the present invention, and not breaking away from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (5)
1, a kind of low noise amplifier that adopts multipath noise counteraction comprises: input crystal tube portion 202, loading section 203; Input crystal tube portion 202 is made up of two identical transistor M21 and M22, is used for amplifying signal; Loading section 203 is made up of two identical transistor M23 and M24, for input transistors 202 parts provide load, its source electrode is connected to the drain electrode of input transistors M21 and M22 respectively, difference output end Vo, its drain electrode is connected to power supply, and the direct grid current current potential is connected to power supply; It is characterized in that, also comprise, balance/unbalance transformer 201, cross-couplings part 204, signal is just being presented part 205;
Balance/unbalance transformer 201, the single-ended signal source that is connected to of its 1st end, two balance end the 2nd ends and the 3rd end are connected to the source electrode of input transistors M21 and M22, the 4th end and the 5th end ground connection respectively;
Cross-couplings part 204 is made up of two resistance-capacitance high-pass filtering circuit C21-R21 and C22-R22, wherein the two ends of capacitor C 21 are connected to the source electrode of input transistors M21 and the grid of M22 respectively, the two ends of capacitor C 22 are connected to the source electrode of input transistors M22 and the grid of M21 respectively, the formation cross-couplings that links to each other with input transistors configuration makes the grid of input transistors M21 and M22 and the ac input signal voltage difference between the source electrode increase or multiplication;
Signal is just being presented part 205, is made up of two resistance capacitance high-pass filtering circuit C23-R23 and C24-R24, and extra signal path and noise cancellation path is provided, and improves the gain of circuit under the prerequisite that does not consume extra power consumption, noise-reduction coefficient.
2, low noise amplifier according to claim 1, it is characterized in that: described input crystal tube portion 202, its direct grid current current potential determines that by bias voltage Vb source electrode is connected to two balance end of balance/unbalance transformer respectively, and drain electrode is connected to load and output end vo.
3, amplifier circuit in low noise according to claim 1, it is characterized in that: the method that the source electrode of described difference input transistors is connected with grid employing cross-couplings, be each input transistors source electrode respectively with situation that two balance end of balanced-unbalanced transformer link to each other under, by two resistance-capacitance high-pass filtering circuits differential input signal is coupled to relative transistorized grid respectively, thereby make under the identical prerequisite of dc power, AC-input voltage multiplication between the grid source of each input transistors, under the constant prerequisite of circuit power consumption, obtain double mutual conductance like this, made the circuit noise coefficient reduce, the linearity increases.
4, low noise amplifier according to claim 1, it is characterized in that: described signal is just being presented part 205 and is being adopted two pairs of resistance-capacitance high-pass filtering networks with the grid of differential input signal AC coupled to load transistor 203, for circuit provides an extra positive feedthrough road from being input between the output.
According to claim 1 or 2 or 3 or 4 described low noise amplifiers, it is characterized in that 5, described transistor is mos field effect transistor (MOSFET), or bipolar junction transistor (BJT).
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| CN102332868A (en) * | 2011-10-18 | 2012-01-25 | 东南大学 | A Low Power Broadband Low Noise Amplifier |
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| CN102045033B (en) * | 2009-10-12 | 2013-02-06 | 财团法人工业技术研究院 | Amplifier with single-ended input and differential output |
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- 2008-01-11 CN CNA2008100325563A patent/CN101483409A/en active Pending
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| CN111010149A (en) * | 2019-12-18 | 2020-04-14 | 浙江悦和科技有限公司 | Random signal generator |
| CN117978109A (en) * | 2024-01-23 | 2024-05-03 | 华南理工大学 | Dual-frequency transconductance boosting technology, amplifier, electronic equipment and control method |
| CN117978109B (en) * | 2024-01-23 | 2025-03-18 | 华南理工大学 | A dual-frequency transconductance enhancement technology, amplifier, electronic equipment and control method |
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