CN101477096A - Polymer plane nano-channel production method - Google Patents
Polymer plane nano-channel production method Download PDFInfo
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- CN101477096A CN101477096A CNA2009100100259A CN200910010025A CN101477096A CN 101477096 A CN101477096 A CN 101477096A CN A2009100100259 A CNA2009100100259 A CN A2009100100259A CN 200910010025 A CN200910010025 A CN 200910010025A CN 101477096 A CN101477096 A CN 101477096A
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- nanochannel
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- 229920000642 polymer Polymers 0.000 title claims abstract description 33
- 239000002090 nanochannel Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 22
- 230000000873 masking effect Effects 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000000126 substance Substances 0.000 claims abstract description 12
- 238000001020 plasma etching Methods 0.000 claims abstract description 11
- 238000001039 wet etching Methods 0.000 claims abstract description 6
- 238000004140 cleaning Methods 0.000 claims abstract 4
- 229920000307 polymer substrate Polymers 0.000 claims abstract 4
- 239000002184 metal Substances 0.000 claims abstract 3
- 229910052751 metal Inorganic materials 0.000 claims abstract 3
- 238000001459 lithography Methods 0.000 claims abstract 2
- 229910052802 copper Inorganic materials 0.000 claims description 23
- 239000010949 copper Substances 0.000 claims description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 21
- 229920002120 photoresistant polymer Polymers 0.000 claims description 19
- 238000005516 engineering process Methods 0.000 claims description 14
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 229910017604 nitric acid Inorganic materials 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 239000003292 glue Substances 0.000 claims 1
- 238000001755 magnetron sputter deposition Methods 0.000 claims 1
- 238000000233 ultraviolet lithography Methods 0.000 claims 1
- 238000009616 inductively coupled plasma Methods 0.000 abstract description 4
- 239000003814 drug Substances 0.000 abstract description 2
- 239000011159 matrix material Substances 0.000 description 6
- 239000002114 nanocomposite Substances 0.000 description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 5
- 239000004926 polymethyl methacrylate Substances 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 108091060218 miR-701 stem-loop Proteins 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
本发明一种聚合物平面纳米沟道制作方法，属于微纳流控芯片制造技术领域，涉及一种聚合物平面纳米沟道的制作方法，应用在生命科学、医学、分析化学等领域。聚合物平面纳米沟道制作方法首先基于标准的紫外光刻和化学湿法腐蚀技术在聚合物基片上制作出线宽为微米级的金属掩蔽图形，接着利用一台等离子体清洗机对暴露在外的聚合物进行氧气等离子体刻蚀，通过设定刻蚀时间，便可以精确控制聚合物纳米沟道的刻蚀深度；最后利用化学湿法腐蚀去除金属掩蔽图形，便得到了聚合物平面纳米沟道。本发明不需要为实现聚合物刻蚀而购买操作复杂、价格昂贵的反应离子刻蚀或感应耦合等离子体刻蚀设备。纳米沟道的整个制作过程简单、周期短、成本低。
The invention discloses a method for manufacturing a polymer planar nanochannel, which belongs to the technical field of manufacturing micro-nanofluidic chips, relates to a method for manufacturing a polymer planar nanochannel, and is applied in the fields of life science, medicine, analytical chemistry and the like. The method of fabricating polymer planar nanochannels is firstly based on standard UV lithography and chemical wet etching techniques to fabricate metal masking patterns with line widths of microns on the polymer substrate, and then uses a plasma cleaning machine to clean the exposed polymer. The etching depth of the polymer nanochannel can be precisely controlled by setting the etching time. Finally, the metal mask pattern is removed by chemical wet etching, and the polymer planar nanochannel is obtained. The invention does not need to purchase complicated and expensive reactive ion etching or inductively coupled plasma etching equipment for polymer etching. The whole manufacturing process of the nano channel is simple, the cycle is short, and the cost is low.
Description
Technical field
The invention belongs to micro-nano-fluidic control chip manufacturing technology field, relate to a kind of method for making of polymer plane nano-channel, be applied in fields such as life science, medical science, analytical chemistry.
Background technology
The micro-nano-fluidic control chip technology is one of the new and high technology that develops rapidly at present and field, multidisciplinary intersection science and technology forward position, the important technological platform that to be following life science, chemical science develop with information science.Micro-nano-fluidic control chip provides very wide prospect in the advantage aspect microminiaturized, integrated and the portability for its application in the various fields such as detection of biomedical, the synthetic screening of medicine, environmental monitoring and protection, health quarantine, judicial expertise, biological warfare agent.The nano-channel manufacturing technology is the basis and the source of micro-nano-fluidic control chip technology, just is being subjected to domestic and international many experts and scholars' great attention.The xsect of raceway groove is on width and degree of depth both direction, and size is called the two-dimensional nano raceway groove all less than 100 nanometers; As just therein on direction less than 100 nanometers, and on another direction greater than 100 nanometers, then be called plane nano-channel.The polymer plane nano-channel production method of having reported at present mainly contains: the straight literary style of the laser or the particle beams, nanometer hot pressing or hot forming, sacrifice layer corrosion method.The straight literary style of the laser or the particle beams needs expensive specialized equipment; Nanometer hot pressing or hot forming need specialized equipment equally, but also need to make expensive figure transfer template; Sacrifice layer corrosion method equipment needed thereby is simple relatively, but often complex technical process, fabrication cycle are long.
Summary of the invention
The objective of the invention is to overcome the defective of existing method for making, a kind of expensive specialized equipment that do not need is provided, simple to operate, quick, the polymer plane nano-channel production method that cost of manufacture is cheap.The polymer plane nano-channel production method that the present invention proposes, what adopt is that the ultraviolet photolithographic technology and the chemical wet etching technology of standard combines with a kind of plasma etch process, and plasma etching is to finish on a plasma clean machine cheap, easy and simple to handle, do not need to buy reactive ion etching (the Reactive ion etching of costliness and complicated operation for realization polymkeric substance etching, RIE) or inductively coupled plasma (Inductively coupled plasma, ICP) etching apparatus.
The technical solution used in the present invention is: a kind of polymer plane nano-channel production method, at first measured ultraviolet photolithographic and chemical wet etching technology are produced live width on polymer matrix film be micron-sized metal shadowing figure, utilize a plasma clean machine to carry out the oxygen gas plasma etching then to being exposed to outer polymkeric substance, by setting etching time, just can accurately control the etching depth of polymer nanocomposite raceway groove; Method for making is as follows:
(1) utilize magnetic control platform sputter one layer thickness on polymer matrix film to be about the copper film of 80nm;
(2) utilize sol evenning machine at copper film surface spin coating one deck positive photoresist, and went forward to dry by the fire 1 hour at 55 ℃ hot plate;
(3) utilize the ultraviolet photolithographic machine to resist exposure 30 seconds, be put on 55 ℃ the hot plate back baking after the development once more 1 hour;
(4) be masking layer with the photoresist, utilizing concentration is that 2.5% salpeter solution corrodes being exposed to outer copper film, obtains the copper masking graphics;
(5) photoresist is carried out whole uv-exposure 120 seconds, put into concentration then and be 0.5% sodium hydroxide solution, remove photoresist;
(6) polymer matrix film that will have the copper masking graphics is put into the plasma clean machine, carries out the oxygen gas plasma etching; Wherein, the radio-frequency power of plasma clean machine is set to 60W, and chamber pressure is set to 200Pa, by setting etching time, just can accurately control the etching depth of nano-channel;
(7) utilizing concentration is that 2.5% salpeter solution is removed the copper masking graphics, has just obtained polymer plane nano-channel.
Remarkable result of the present invention is can utilize the logical plasma clean machine of the ultraviolet photolithographic of standard and chemical wet etching technology and a Daepori to match just can realize the making of polymer plane nano-channel, and entire making process is simple, the cycle is short, cost is low.
Description of drawings
Fig. 1 is a sputter copper film, and Fig. 2 is photoetching, and Fig. 3 is a chemical corrosion copper film, and Fig. 4 removes photoresist, and Fig. 5 is the plasma etching polymkeric substance, and Fig. 6 removes the copper film.Wherein: 1-polymer matrix film, 2-copper film, 3-photoresist, a-photoresist figure, b-copper masking graphics, c-polymer nanocomposite raceway groove.
Fig. 7 is nano-channel etching depth and etching time graph of a relation, and wherein: horizontal ordinate is the time, and unit is minute, and ordinate is the degree of depth, and unit is a nanometer.
Fig. 8 is the nano-channel stereoscan photograph, wherein: c-polymer nanocomposite raceway groove.
Embodiment
Describe embodiments of the present invention in detail below in conjunction with technical scheme and accompanying drawing.Shown in accompanying drawing 1,2,3,4,5 and 6, the model that adopts Beijing wound Wei Na Science and Technology Ltd. to produce is the magnetic control platform of JS3X-80B, and sputter one layer thickness is about the copper film 2 of 80nm on polymer matrix film 1; The model that adopts German SUSS MicroTec company to produce is the sol evenning machine of Delta 80RC, the model of producing in copper film surface spin coating one deck AZ ElectronicMaterials company is the positive photoresist of AZ MiR701, the rotating speed of sol evenning machine is 2600r/min, and went forward to dry by the fire 1 hour at 55 ℃ hot plate, mask film covering version on photoresist 3 then, utilize model that German SUSS MicroTec company produces ultraviolet photolithographic machine for MA/BA6, to photoresist 3 exposures 30 seconds, putting into and obtaining width after developer solution develops is micron-sized photoresist figure a, and is put on 55 ℃ the hot plate back baking once more 1 hour; With the photoresist is masking layer, and utilizing concentration is that 2.5% salpeter solution corrodes being exposed to outer copper film 2, obtains copper masking graphics b; Photoresist 3 is carried out whole uv-exposure 120 seconds, put into concentration then and be 0.5% sodium hydroxide solution, remove photoresist 3; It is the plasma clean machine of DQ-500 that the polymer matrix film 1 that will have a copper masking graphics b is put into the model that No.13 Inst., Chinese Electronic Science ﹠ Technology Group Co produces, and carries out the oxygen gas plasma etching, etches polymer nanocomposite raceway groove c; Utilizing concentration is that 2.5% salpeter solution erodes copper masking graphics 2, obtains polymer nanocomposite raceway groove c.
Behind the radio-frequency power and chamber pressure of having fixed the plasma clean machine,, just can accurately control the etching depth of nano-channel by adjusting etching time.With a kind of micro-nano-fluidic control chip commonly used polymeric material---polymethylmethacrylate (PMMA) is an example, Fig. 7 shown when radio-frequency power be 60 watts, when chamber pressure is 200 handkerchiefs, width is 5 microns PMMA nano-channel etching depth and an etching time graph of a relation, and average etching speed is about per minute 10 nanometers.Fig. 8 is the PMMA nano-channel c of 9 parallel wide 5 microns dark about 100 nanometers producing.
The present invention has realized the easy making of polymer plane nano-channel, do not need to be the extra expensive device of buying special use of the etching that realizes polymkeric substance, whole fabrication cycle only needs several hrs, and the repeatable accuracy height, be very suitable for the mass of polymer plane nano-channel, low-cost processing.Experiment showed, that this method is applicable to most polymeric materials that micro-nano-fluidic control chip is commonly used, as PMMA, polycarbonate (PC), polystyrene (PS), COP (Cyclo-olefin polymer, cyclic olefin polymer) etc.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009100100259A CN101477096B (en) | 2009-01-05 | 2009-01-05 | Polymer plane nano-channel production method |
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| CN2009100100259A CN101477096B (en) | 2009-01-05 | 2009-01-05 | Polymer plane nano-channel production method |
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| CN101477096B CN101477096B (en) | 2012-11-21 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101887214A (en) * | 2010-07-16 | 2010-11-17 | 中国科学院长春光学精密机械与物理研究所 | Method for preparing fine metal mask bushing by wet etching |
| CN102030306A (en) * | 2009-09-25 | 2011-04-27 | 株式会社东芝 | Cleaning method, cleaning system, and method for manufacturing microstructure |
| CN102376537A (en) * | 2010-08-10 | 2012-03-14 | 海力士半导体有限公司 | Method of manufacturing semiconductor devices |
| WO2014079315A1 (en) * | 2012-11-23 | 2014-05-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Substrate etching method |
| CN105478022A (en) * | 2015-12-18 | 2016-04-13 | 中国电子科技集团公司第十三研究所 | Millipore filter membrane preparing method based on Parylene |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5976444A (en) * | 1996-09-24 | 1999-11-02 | The United States Of America As Represented By The Secretary Of The Navy | Nanochannel glass replica membranes |
| US5855716A (en) * | 1996-09-24 | 1999-01-05 | The United States Of America As Represented By The Secretary Of The Navy | Parallel contact patterning using nanochannel glass |
| CN100423245C (en) * | 2005-12-07 | 2008-10-01 | 中国科学院物理研究所 | Metal silicide nanowire and its manufacturing method |
| CN101037185B (en) * | 2007-01-12 | 2011-09-21 | 中国科学院上海微系统与信息技术研究所 | A method for fabricating nanoscale channels on quartz glass |
| WO2008096335A2 (en) * | 2007-02-07 | 2008-08-14 | Yeda Research And Development Co. Ltd. | Producing an array of nanoscale structures on a substrate surface via a self-assembled template |
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2009
- 2009-01-05 CN CN2009100100259A patent/CN101477096B/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102030306A (en) * | 2009-09-25 | 2011-04-27 | 株式会社东芝 | Cleaning method, cleaning system, and method for manufacturing microstructure |
| CN102030306B (en) * | 2009-09-25 | 2014-08-27 | 株式会社东芝 | Cleaning method, cleaning system, and method for manufacturing microstructure |
| CN101887214A (en) * | 2010-07-16 | 2010-11-17 | 中国科学院长春光学精密机械与物理研究所 | Method for preparing fine metal mask bushing by wet etching |
| CN101887214B (en) * | 2010-07-16 | 2012-06-13 | 中国科学院长春光学精密机械与物理研究所 | Method for preparing fine metal mask bushing by wet etching |
| CN102376537A (en) * | 2010-08-10 | 2012-03-14 | 海力士半导体有限公司 | Method of manufacturing semiconductor devices |
| WO2014079315A1 (en) * | 2012-11-23 | 2014-05-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Substrate etching method |
| CN103832965A (en) * | 2012-11-23 | 2014-06-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Substrate etching method |
| US9478439B2 (en) | 2012-11-23 | 2016-10-25 | Beijing Nmc Co., Ltd. | Substrate etching method |
| CN103832965B (en) * | 2012-11-23 | 2017-02-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Substrate etching method |
| CN105478022A (en) * | 2015-12-18 | 2016-04-13 | 中国电子科技集团公司第十三研究所 | Millipore filter membrane preparing method based on Parylene |
| CN105478022B (en) * | 2015-12-18 | 2019-03-05 | 中国电子科技集团公司第十三研究所 | Miillpore filter preparation method based on Parylene |
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| CN101477096B (en) | 2012-11-21 |
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