CN101452922B - Light emitting unit - Google Patents
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- CN101452922B CN101452922B CN2008100804727A CN200810080472A CN101452922B CN 101452922 B CN101452922 B CN 101452922B CN 2008100804727 A CN2008100804727 A CN 2008100804727A CN 200810080472 A CN200810080472 A CN 200810080472A CN 101452922 B CN101452922 B CN 101452922B
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- 239000000758 substrate Substances 0.000 claims abstract description 62
- 239000000463 material Substances 0.000 claims abstract description 23
- 239000000084 colloidal system Substances 0.000 claims abstract description 16
- 239000000853 adhesive Substances 0.000 claims abstract description 8
- 230000001070 adhesive effect Effects 0.000 claims abstract description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 15
- 239000012530 fluid Substances 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- 238000000295 emission spectrum Methods 0.000 claims description 3
- 238000004020 luminiscence type Methods 0.000 claims 16
- 239000002390 adhesive tape Substances 0.000 claims 3
- 230000001186 cumulative effect Effects 0.000 claims 1
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 229910052756 noble gas Inorganic materials 0.000 claims 1
- 238000007789 sealing Methods 0.000 abstract description 6
- 238000004806 packaging method and process Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 52
- 239000008393 encapsulating agent Substances 0.000 description 30
- 238000006243 chemical reaction Methods 0.000 description 20
- 238000010586 diagram Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 8
- 230000017525 heat dissipation Effects 0.000 description 8
- 239000007788 liquid Substances 0.000 description 5
- 239000002861 polymer material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 3
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 3
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 3
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 3
- 238000004026 adhesive bonding Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 description 1
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000012994 photoredox catalyst Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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Abstract
Description
技术领域technical field
本发明涉及一种发光单元,特别是关于一种具有密闭空间的发光单元。The invention relates to a light emitting unit, in particular to a light emitting unit with a closed space.
背景技术Background technique
由于发光二极管(Light Emitting Diode,LED)具有高亮度及省电等优点,因此,随着发光二极管的技术逐渐成熟,其应用领域也越来越广泛,例如光源及背光源。Since the light emitting diode (Light Emitting Diode, LED) has the advantages of high brightness and power saving, as the technology of the light emitting diode gradually matures, its application fields are becoming more and more extensive, such as light source and backlight source.
请参照图1所示,一种现有的发光单元1包含一基板11、一发光二极管芯片12、一封胶体13及一反射壳体(lamp house)14。其中,发光二极管芯片12设置于基板11上,并利用打线接合(wire bonding)的方式与基板11电性连接。封胶体13为透光材料,并用以保护发光二极管芯片12。反射壳体14则利用反射集中发光二极管的出光方向。Referring to FIG. 1 , a conventional light-
在现有技术中,当发光二极管芯片12发光时,其会产生大量的热能,且发光二极管芯片12、固化后的封胶体13、基板11及反射壳体14四者的材质的热膨胀程度并不相同,因此将会造成夹置于发光二极管芯片12、封胶体13、基板1 1及反射壳体14之间的导线W,受到挤压或拉扯而产生变形或断裂,进而可能造成发光二极管芯片12无法发光的情形,也会使得发光单元1产生缺陷。其中,热膨胀程度不同所造成的影响,尤其是在具有大面积封胶体的发光单元中更为严重。In the prior art, when the light-emitting
另外,现有技术架构亦不能改善发光二极管散热的问题。温度最高的PN界面(junction)仍包覆在高厚度的封胶体之中,因此只能通过热传导方式将热导引至基板。In addition, the existing technical framework cannot improve the heat dissipation problem of the LED. The PN junction with the highest temperature is still covered by a high-thickness encapsulant, so heat can only be conducted to the substrate through heat conduction.
因此,如何提供一种能避免发光二极管芯片的导线因壳体、封胶体、发光二极管芯片与基板四者之间热膨胀程度不同而产生断裂的发光单元,以及能够改善散热的发光单元,已成为重要课题之一。Therefore, how to provide a light-emitting unit that can prevent the wires of the light-emitting diode chip from being broken due to the difference in thermal expansion between the casing, the encapsulant, the light-emitting diode chip and the substrate, and a light-emitting unit that can improve heat dissipation have become important. one of the subjects.
发明内容Contents of the invention
有鉴于上述课题,本发明的目的在于克服现有技术的不足与缺陷,提出一种能避免发光二极管芯片的导线因壳体、封胶体、发光二极管芯片与基板之间材质热膨胀程度不同而产生断裂的发光单元。In view of the above-mentioned problems, the object of the present invention is to overcome the deficiencies and defects of the prior art, and propose a method that can avoid the breakage of the wires of the light-emitting diode chip due to the difference in thermal expansion of the material between the housing, the sealing body, the light-emitting diode chip and the substrate. light emitting unit.
为达上述目的,本发明提供一种发光单元,包含一基板、至少一发光二极管芯片、至少一导线及至少一封胶体。发光二极管芯片以一黏着材料设置于基板。导线一第一端连接于发光二极管芯片,一第二端连接于基板,第二端与发光二极管芯片的中心点具有一第一距离,且导线的最高点与基板具有一第二距离。封胶体至少覆盖部分的发光二极管芯片,且封胶体与发光二极管芯片的体积和小于由第一距离与第二距离形成之一圆柱体的体积,其中第一距离为圆柱体的半径,该第二距离为该圆柱体的高,且该发光二极管芯片与该基板的连接面是与该导线的该第二端位于相同的水平面。To achieve the above purpose, the present invention provides a light emitting unit, which includes a substrate, at least one light emitting diode chip, at least one wire and at least one encapsulant. The LED chip is arranged on the substrate with an adhesive material. A first end of the wire is connected to the LED chip, a second end is connected to the substrate, the second end has a first distance from the center point of the LED chip, and the highest point of the wire has a second distance from the substrate. The encapsulant covers at least part of the LED chip, and the sum of the volumes of the encapsulant and the LED chip is smaller than the volume of a cylinder formed by the first distance and the second distance, wherein the first distance is the radius of the cylinder, and the second The distance is the height of the cylinder, and the connection surface between the LED chip and the substrate is located at the same level as the second end of the wire.
为达上述目的,本发明还提供一种发光单元,包含一基板、至少一发光二极管芯片、至少一封胶体及至少一导线。发光二极管芯片以一黏着材料设置于基板,封胶体至少覆盖发光二极管芯片之一部分面积。导线一第一端连接于发光二极管芯片,一第二端连接于基板且至少一部分导线外露于封胶体,其中该发光二极管芯片与该基板的连接面是与该导线的该第二端位于相同的水平面。To achieve the above purpose, the present invention also provides a light emitting unit, which includes a substrate, at least one light emitting diode chip, at least one encapsulant, and at least one wire. The light-emitting diode chip is arranged on the substrate with an adhesive material, and the encapsulant covers at least a part of the area of the light-emitting diode chip. A first end of the wire is connected to the light-emitting diode chip, a second end is connected to the substrate and at least a part of the wire is exposed to the encapsulant, wherein the connection surface between the light-emitting diode chip and the substrate is located at the same level as the second end of the wire level.
承上所述,本发明具有以下有益技术效果:因依据本发明之一种发光单元的体积厚度远小于现有技术,由此可避免发光二极管芯片与基板间连接的导线受拉扯或挤压而产生变形或断裂的情形。另外,封胶体的厚度减少后,发光二极管芯片的散热路径除经由下方基板作散热外,亦可直接经由上方散热。Based on the above, the present invention has the following beneficial technical effects: because the volume thickness of a light-emitting unit according to the present invention is much smaller than that of the prior art, it can prevent the wires connected between the light-emitting diode chip and the substrate from being pulled or squeezed. Deformation or breakage occurs. In addition, after the thickness of the encapsulant is reduced, the heat dissipation path of the LED chip can not only dissipate heat through the lower substrate, but also directly dissipate heat through the upper side.
附图说明Description of drawings
图1为一种现有的发光单元示意图;Fig. 1 is a schematic diagram of an existing lighting unit;
图2A为本发明第一实施例的一种发光单元示意图,图2B为沿图2A中的A-A直线的剖面图;Fig. 2A is a schematic diagram of a light-emitting unit according to the first embodiment of the present invention, and Fig. 2B is a cross-sectional view along the line A-A in Fig. 2A;
图3A及图3B为本发明第一实施例的发光单元的变化态样示意图;3A and 3B are schematic diagrams of changes in the light emitting unit of the first embodiment of the present invention;
图4A为本发明第二实施例的发光单元示意图,图4B为沿图4A中的A-A直线的发光单元剖面图;Fig. 4A is a schematic diagram of a light-emitting unit according to a second embodiment of the present invention, and Fig. 4B is a cross-sectional view of the light-emitting unit along the line A-A in Fig. 4A;
图5A及图5B为本发明第二实施例的发光单元的一变化态样示意图;FIG. 5A and FIG. 5B are schematic diagrams of a variation of the light emitting unit of the second embodiment of the present invention;
图6为本发明第二实施例的发光单元的另一变化态样示意图;FIG. 6 is a schematic diagram of another variation of the light emitting unit according to the second embodiment of the present invention;
图7为本发明的反射层设置于基板上的变化态样示意图;Fig. 7 is a schematic diagram of the changing state of the reflective layer of the present invention disposed on the substrate;
图8为本发明第二实施例的发光单元的又一变化态样示意图;Fig. 8 is a schematic diagram of another variation of the light emitting unit according to the second embodiment of the present invention;
图9A及图9B为本发明第三实施例的发光单元的示意图;9A and 9B are schematic diagrams of a light emitting unit according to a third embodiment of the present invention;
图10为本发明第三实施例的发光单元另一变化态样示意图;FIG. 10 is a schematic diagram of another variation of the light emitting unit according to the third embodiment of the present invention;
图11为本发明第三实施例的发光单元的又一变化态样示意图。FIG. 11 is a schematic diagram of another variation of the light emitting unit of the third embodiment of the present invention.
图中符号说明Explanation of symbols in the figure
1、2、3、4、5发光单元1, 2, 3, 4, 5 lighting units
11、22、32、42基板11, 22, 32, 42 substrates
12、23、33、43、53发光二极管芯片12, 23, 33, 43, 53 LED chips
13、25、25A、25B、45、55封胶体13, 25, 25A, 25B, 45, 55 sealants
14、L反射壳体14. L reflective housing
21、31透光壳体21, 31 light-transmitting shell
211、411、511密闭空间211, 411, 511 confined space
231中心点231 center point
24、W导线24. W wire
241第一端241 first end
242第二端242 second end
26、46连接电极26, 46 connection electrodes
37、37A~37D、47反射层37, 37A~37D, 47 reflective layer
371开口部371 opening
38、48萤光转换层38, 48 fluorescent conversion layer
412、413壳体元件412, 413 housing components
51、51A中空壳体51, 51A hollow shell
A-A、B-B直线A-A, B-B straight line
C圆柱体C cylinder
D1第一距离D1 first distance
D2第二距离D2 second distance
H最高点H highest point
S透镜结构S lens structure
T萤光体胶带T phosphor tape
T1黏着层T1 adhesive layer
T2萤光层T2 fluorescent layer
具体实施方式Detailed ways
以下将参照相关附图,说明依据本发明之一种发光单元,其中相同元件以相同标号表示。A light emitting unit according to the present invention will be described below with reference to related drawings, wherein the same components are denoted by the same reference numerals.
第一实施例first embodiment
请同时参照图2A及图2B所示,其中图2B为发光单元2沿图2A中的A-A直线的剖面图。本发明第一实施例之一种发光单元2包含一基板22、至少一发光二极管芯片23、至少一导线24及至少一封胶体25。其中本实施例以二导线24为例作说明。另外,于本实施例中,发光单元2更包含一透光壳体21。Please refer to FIG. 2A and FIG. 2B at the same time, wherein FIG. 2B is a cross-sectional view of the
透光壳体21可具有一透光部及一非透光部,意即透光壳体21可部分透光、部分不透光,当然透光壳体21亦可全部透光。其中,透光壳体21的透光部的材质例如为高分子聚合材料、玻璃或石英的至少其中之一,而非透光部的材质例如为高分子聚合材料、陶瓷或金属的至少其中之一。于本实施例中,透光壳体21以透明高分子聚合材料为例作说明,而高分子聚合材料选自聚苯乙烯(polystyrene,PS)、聚碳酸酯(polycarbonate,PC)、苯乙烯-甲基丙烯酸甲酯树脂(methylstyrene,MS)、聚甲基丙烯酸甲酯(polymethylmethacrylate,PMMA)或丙烯晴-丁二烯-苯乙烯(Acrylonitrile Butadiene Styrene,ABS)至少其中之一。另外,若透光壳体21的材质为金属,则于发光二极管芯片23的出光面具有一开口,其为透光部,以使光线射出。由于金属本身具有高反射率、良好的散热效果及容易加工成型等优点,由此可增加发光单元2的应用范围。The
再者,利用高分子聚合材料的透光壳体21,其亦可掺杂多个散射体(scattering center),以增加光扩散的效果。其中,散射体例如为散射粒子或散射气泡,而散射粒子的材料可利用与透光壳体21的折射率不同的有机散射粒子或无机散射粒子,例如氧化铝(Al2O3)、硫酸钡(BaSO4)或二氧化硅(SiO2)等。Furthermore, the light-transmitting
基板22例如为一玻璃基板、一树脂基板、一陶瓷基板或一金属基板,其并与透光壳体21形成一密闭空间211。其中,密闭空间211可为真空或充填有气体,例如充填氮气或惰气(inert gas)。另外,密闭空间211亦可充填一胶体或一流体,其中胶体例如为液态胶体或弹性胶体,而流体例如为油质流体,且液态胶体、弹性胶体或油质流体的折射率大于1.3。另外,当透光壳体21的表面为曲面时,液态胶体、弹性胶体或油质流体的折射率可大于或等于透光壳体21,由此可造成集光的功能,使透光壳体21的出光面形成类似凸透镜的效果。The
发光二极管芯片23以一黏着材料设置于基板22。发光二极管芯片23的发射光谱例如为可见光范围及/或紫外光范围,其中所述的发光二极管芯片23的发射光谱若为可见光范围,则发光二极管芯片23可选自红光发光二极管芯片、绿光发光二极管芯片、蓝光发光二极管芯片及其组合所构成的群组。The
请参照图2B所示,导线24的一第一端241连接于发光二极管芯片23,而导线24的一第二端242连接于基板22。其中导线24的第二端242与发光二极管芯片23的中心点231具有一第一距离D1,且导线24的最高点H与基板22具有一第二距离D2。其中,需注意的是,发光二极管芯片23的中心点231是指发光二极管芯片23与基板22接合面的几何中心点。Please refer to FIG. 2B , a
请再同时参照图2A及图2B所示,封胶体25至少覆盖部分的发光二极管芯片23,且封胶体25与发光二极管芯片23的总体积小于由第一距离D1与第二距离D2形成的一圆柱体C的体积,其中第一距离D1为圆柱体C的半径,而第二距离D2则为圆柱体C的高。于本实施例中,以封胶体25完全覆盖发光二极管芯片23及导线24为例作说明。封胶体25可为一多层折射率材料结构,其材料特性为随着与各发光二极管芯片23的距离由近到远,材料的折射率由大至小作排列。因此,通过封胶体25多层折射率材料结构的特性,即可增加所述的发光二极管芯片23的出光范围,进而使发光单元2的出光更为均匀。Please refer to FIG. 2A and FIG. 2B at the same time, the
另外,请参照图3A所示,封胶体25A亦可延设至导线24与基板22之间。另外,请参照图3B所示,至少部分的导线24亦可外露于封胶体25B。In addition, please refer to FIG. 3A , the
请再参照图2A所示,本实施例中,发光单元2更包含至少二连接电极26。所述的连接电极26与发光二极管芯片23电性连接,且连接电极26可设置于基板22的一端、分别设置于基板22的两端或是设置于基板22上的任何位置。其中,连接电极26设置至透光壳体21的外部。在本实施例中,所述的连接电极26以设置于基板22的一端为例。Please refer to FIG. 2A again. In this embodiment, the
承上所述,由于发光二极管芯片23位于透光壳体21的密闭空间211内,由此透光壳体21即可保护发光二极管芯片23不受水气或灰尘等外界环境因素的影响。因此,本实施例的发光单元2的封胶体25仅作为提高发光二极管芯片23的出光效率及出光范围的功能。由于封胶体25的体积厚度远小于现有技术的封胶体的体积厚度,由此可避免发光二极管芯片23与基板22间连接的导线24,受拉扯或挤压而产生变形或断裂的情形。另外,封胶体25的厚度减少后,发光二极管芯片23的散热路径除经由下方基板22作散热外,亦可直接经由上方散热,又若于密闭空间211内充填气体、液态胶体、弹性胶体或油质流体等,通过其热对流效应则更可提高发光二极管芯片23的散热效果。As mentioned above, since the
第二实施例second embodiment
请同时参照图4A及图4B所示,其中图4B为沿图4A中的B-B直线的发光单元3剖面图,本发明第二实施例的发光单元3与第一实施例的差异在于:发光单元3更包含一反射部及至少一萤光转换层38。其中,反射部可以为透光壳体31的一部分,或是如本实施例所述外加一反射层37。Please refer to Figure 4A and Figure 4B at the same time, wherein Figure 4B is a cross-sectional view of the
反射层37设置于透光壳体31的外表面,其并具有至少一开口部371,且开口部371对应于所述的发光二极管芯片33的一出光面。反射层37的材料选自反射频谱为紫外光波段(200-400nm)、可见光蓝光波段(400-480nm)或可见光全波段(400-780nm)其中之一,且其反射率至少大于50%以上。另外,反射层37亦可利用二氧化钛(TiO2)、硫酸钡(BaSO4)或氧化铝(Al2O3)等材料以涂布或印刷来形成于透光壳体31的外表面,或将上述材料加入塑料材料中,再以压出成形、注塑成形等方式形成反射层37。又,反射层37亦可通过一反射膜片、一镜片或一多层镀膜材料于透光壳体31的外表面来达成。The
萤光转换层38可设置于至少部分的透光壳体31的部分外表面及/或部分内表面或直接掺杂于透光壳体31内。于本实施例中,萤光转换层38对应设置于开口部371的透光壳体31的外表面。且萤光转换层38选自一黄色萤光转换层、一红色萤光转换层、一绿色萤光转换层或一蓝色萤光转换层的至少其中之一。The
通过反射层37的设置可集中发光单元3的出光方向,且可利用反射层37使所述的发光二极管芯片33发出的光线先于透光壳体31内进行混光后再射出。又,通过萤光转换层38则可改变发光单元3的出光颜色。The light emitting direction of the
另外,请参照图5A所示,反射层37A亦可设置于透光壳体31的内表面,且反射层37A亦具有开口部371,其对应于所述的发光二极管芯片33的出光面,而萤光转换层38亦可设置于对应于开口部371的透光壳体31的内表面或外表面。于此以萤光转换层38设置于对应于开口部371的透光壳体31的内表面为例作说明。又,请参照图5B所示,亦可同时于透光壳体31的内表面及外表面设置反射层37B及反射层37C。需注意的是,设置于透光壳体31A的内表面及外表面的反射层37B及反射层37C为错位设置,但应避免覆盖住出光用的开口部371。In addition, as shown in FIG. 5A , the
请参照图6所示,萤光转换层亦可改以利用一萤光体胶带(phosphor tape)T来取代,萤光体胶带T设置于至少部分的透光壳体31的外表面及/或内表面,于此萤光体胶带T是以黏贴设置于透光壳体31的外表面为例作说明。萤光体胶带T例如具有一黏着层T1及一萤光层T2,萤光层T2中则掺杂有萤光体,以改变出光颜色。其中需注意的是,萤光体胶带T依不同的需求可有不同的组成。Please refer to FIG. 6, the fluorescent conversion layer can also be replaced by a phosphor tape (phosphor tape) T, and the phosphor tape T is arranged on at least part of the outer surface of the light-transmitting
另外,上述的反射层以设置于透光壳体为例说明,然而,反射层亦可设置于基板的表面。请参照图7所示,基板32的一表面设置有发光二极管芯片33。一反射层37D设置于基板32上的发光二极管芯片33的周围。利用反射层37D将由发光二极管芯片33所发射至基板32的光线反射,由此可增加所述的发光二极管芯片33所发出光线的利用率。其中,若基板32为透明基板,则反射层37D亦可设置于与发光二极管芯片33相对的另一表面。反射层37D的材质与上述实施例中的反射层的材质相同,于此不再赘述。In addition, the above-mentioned reflective layer is described as being disposed on the transparent casing as an example, however, the reflective layer may also be disposed on the surface of the substrate. Please refer to FIG. 7 , a light emitting
另外,请参照图8所示,于电路基板32上的所述的发光二极管芯片33周边亦可设置有一反射壳体(lamp house)L,由此可用以反射集中发光二极管芯片33的出光方向。In addition, as shown in FIG. 8 , a reflective housing (lamp house) L may also be provided around the
第三实施例third embodiment
请同时参照图9A及图9B所示,本发明第三实施例的发光单元4与第一实施例的差异在于:发光单元4的密闭空间411由二壳体元件412、413所构成。基板42的上设置有多个发光二极管芯片43及至少二连接电极46。所述的发光二极管芯片43以二维方式排列为例,然其非限制性。封胶体45则利用与第一实施例相同的方式包覆所述的发光二极管芯片43。基板42夹置于二壳体元件412、413之间。其中,一反射层47可设置或形成于基板42之上,而一萤光转换层48则可设置或形成于壳体元件412,然其非限制性,其变化态样亦可参照上述实施例,当然萤光转换层亦可改以利用萤光体胶带来取代。另外,壳体元件412、413亦可与第一实施例相同具有一透光部及一非透光部,例如基板42的上的壳体元件412为透光部,而基板42下的壳体元件413为非透光部。又,壳体元件412、413的至少其中之一可具有多个散射体,其材质与第一实施例中的散射体的材质相同,于此不再赘述。Please refer to FIG. 9A and FIG. 9B at the same time. The difference between the light emitting unit 4 of the third embodiment of the present invention and the first embodiment is that the
所述的壳体元件412、413在对应设置后,可利用胶合或熔合等方式结合,以形成密闭空间411。其中,胶合方式包含封胶后紫外光固化、封胶后热固化或封胶后自然干燥等。另外,所述的壳体元件412、413亦可先以锁合或卡合结合后,再以胶合或熔合方式作结合。After the
另外,请参照图10所示,发光单元5的密闭空间511亦可由一中空壳体51所形成。中空壳体51亦可具有一反射层及一萤光转换层,设置于部分的中空壳体51的一外表面及/或一内表面,当然萤光转换层亦可改以利用萤光体胶带来取代。其中,中空壳体51的截面形状非限制性,其例如可为圆形、椭圆形、三角形、四边形、多边形或不规则形,依不同的设计可有不同的变化态样,且中空壳体51可与前述实施例相同具有多个散射体。封胶体55则同样利用与第一实施例相同的方式包覆所述的发光二极管芯片53。In addition, please refer to FIG. 10 , the
另外,请参照图11所示,若于所述的发光二极管芯片53出光面上的壳体形状为三角形、四边形、多边形或不规则形等,则对应各发光二极管芯片53上的壳体的外表面或内表面可具有一透镜结构S,于此以透镜结构S设置于中空壳体51A的外表面为例作说明,然其非限制性。由此以使发光二极管芯片53所发出的光产生聚光的效果。In addition, please refer to FIG. 11 , if the housing shape on the light-emitting surface of the light-emitting
综上所述,因依据本发明的一种发光单元将发光二极管芯片置于一密闭空间内,通过壳体来保护发光二极管芯片不受水气或灰尘等外界环境因素的影响。因此,本发明的发光单元的封胶体作为提高发光二极管芯片的出光效率及出光范围的功能。由于封胶体的体积厚度远小于现有技术,由此可避免发光二极管芯片与基板间连接的导线,受拉扯或挤压而产生变形或断裂的情形。另外,封胶体的厚度减少后,发光二极管芯片的散热路径除经由下方基板作散热外,亦可直接经由上方散热,又若于密闭空间内充填气体、液态胶体、弹性胶体或油质流体等,藉其热对流效应则更可提高发光二极管芯片的散热效果。To sum up, according to the light emitting unit of the present invention, the light emitting diode chip is placed in a closed space, and the light emitting diode chip is protected from external environmental factors such as moisture or dust through the casing. Therefore, the encapsulant of the light-emitting unit of the present invention has the function of improving the light-extraction efficiency and the light-extraction range of the LED chip. Since the volume thickness of the encapsulant is much smaller than that of the prior art, the wires connected between the light-emitting diode chip and the substrate can be prevented from being deformed or broken due to being pulled or squeezed. In addition, after the thickness of the encapsulant is reduced, the heat dissipation path of the LED chip can not only dissipate heat through the lower substrate, but also directly dissipate heat through the upper part, and if the enclosed space is filled with gas, liquid colloid, elastic colloid or oily fluid, etc., The thermal convection effect can further improve the heat dissipation effect of the LED chip.
另外,本发明的发光单元更可包含一反射层及一萤光转换层。设置有反射层的透光壳体上除可固定出光方向外,并可使多个发光二极管芯片所发出的光线先于透光壳体内进行混光。而萤光转换层则可用以改变发光单元的出光颜色,以增加发光单元的应用范围。萤光转换层更可改以利用萤光体胶带来取代,来增加制程效率及产品可靠度。In addition, the light emitting unit of the present invention may further include a reflective layer and a fluorescent conversion layer. In addition to fixing the light emitting direction on the light-transmitting shell provided with the reflective layer, the light emitted by the plurality of light-emitting diode chips can be mixed before the light in the light-transmitting shell. The fluorescent conversion layer can be used to change the light color of the light-emitting unit, so as to increase the application range of the light-emitting unit. The phosphor conversion layer can be replaced by phosphor tape to increase process efficiency and product reliability.
以上所述仅为举例性,而非为限制性。任何未脱离本发明的精神与范畴,而对其进行的等效修改或变更,均应包含于权利要求书的范围中。The above description is for illustration only, not for limitation. Any equivalent modification or change without departing from the spirit and scope of the present invention shall be included in the scope of the claims.
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