CN101447397A - Inactive atmosphere device in wet cleaning - Google Patents
Inactive atmosphere device in wet cleaning Download PDFInfo
- Publication number
- CN101447397A CN101447397A CNA2007101875528A CN200710187552A CN101447397A CN 101447397 A CN101447397 A CN 101447397A CN A2007101875528 A CNA2007101875528 A CN A2007101875528A CN 200710187552 A CN200710187552 A CN 200710187552A CN 101447397 A CN101447397 A CN 101447397A
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- Prior art keywords
- cleaning unit
- air
- gas
- wet
- active gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004140 cleaning Methods 0.000 title claims abstract description 57
- 239000007789 gas Substances 0.000 claims abstract description 49
- 238000001914 filtration Methods 0.000 claims abstract description 14
- 238000004064 recycling Methods 0.000 claims abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 20
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 5
- 239000001301 oxygen Substances 0.000 abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 abstract description 5
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- 150000002739 metals Chemical class 0.000 abstract 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 229910017052 cobalt Inorganic materials 0.000 description 7
- 239000010941 cobalt Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- -1 metallic pollution Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002957 persistent organic pollutant Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention relates to an inactive atmosphere device in a wet cleaning process. The device comprises: at least one inactive gas container, each of which accommodates an inactive gas; a cleaning unit which comprises a fan filter unit which is arranged on the upper part of the cleaning unit, communicated with the at least one inactive gas container or air by a tube and used for absorbing and filtering the inactive gas or the air; a rinsing tank which is arranged in the middle part of the cleaning unit; an exhaust tube which is arranged at the underside of the cleaning unit and used for expelling the gas from the cleaning unit; an air pump which is arranged in an air tube and used for recycling the inactive gas; and a control panel for controlling the inactive atmosphere device. The device can cause laminar gas in the cleaning unit to be in the inactive gas to prevent oxidation reaction between metals having strong activity with oxygen in the air, and maintain the pure gas atmosphere in the cleaning unit to avoid impure foreign substances in the air from polluting wafer and prevent other unexpected reactions.
Description
Technical field
The present invention relates to a kind of cleaning device of cleaning applications, particularly relate to the inactive atmosphere device in a kind of wet clean process.
Background technology
Along with the research and development and the production of ultra large scale integrated circuit (ULSI), the live width of wafer (Wafer, or claim silicon chip, disk, wafer) constantly reduces, and wafer diameter is in continuous increase.In the ever-reduced while of live width, also more and more higher to the requirement of wafer quality, particularly silicon polished surface quality is required more and more stricter.This mainly is because particle, metallic pollution, organic pollutants, natural oxide film and the microroughness etc. on polished silicon wafer surface seriously affect performance and the rate of finished products of ULSI.Therefore, wafer surface is cleaned just becomes a vital technology in the ULSI preparation.
The main purpose that wafer cleans in the ic manufacturing process is to remove the pollution and the impurity of wafer surface, as impurity such as particulate, organic substance and inorganic metal ions.In manufacture process, almost the per pass operation all relates to cleaning, and the integrated level of integrated circuit is high more, and manufacturing process is many more, and required matting is also many more.In many mattings,, then, cause scrapping of chip by the gross with all that has been achieved is spoiled as long as wherein a certain operation does not reach requirement.
Metal contamination exists with three kinds of format surfaces such as Van der Waals force, covalent bond and electron transfers on silicon chip.This contamination can destroy the integrality of thin oxide layer, increases leakage current density, influences the stability of MOS device, and heavy metal ion can increase dark current, and situation is fault of construction or vaporific defective.
At present, traditional RCA (Radio Corporation of America, the Radio Corporation of America) wet chemistry cleaning technology remains the main wafer cleaning technique of semiconducter IC industry.Along with the introduction of higher process technique, crucial particle diminishes, and becomes crucial all the more for the control of nano-scale particle and metal ion pollution, and existing wafer cleaning technique can not satisfy the requirement of cleaning.As shown in Figure 1, existing wet-cleaned board mainly is to utilize blower fan filtering unit (FFU, Fan Filter Unit) 1 with air suction and filtration, pure air after the filtration is kept the inside laminar flow of board 2 with suitable wind speed, and with respect to the outside malleation that forms of board, thereby keep the cleanliness factor of board inside.As shown in Figure 2, in the autoregistration processing procedure, remove unreacted completely during metal in wet-cleaned, because the small part metal is (as Ti, Co) removal is unclean, and kish is in air atmosphere, and easy and oxygen reaction generates oxide, this oxide is difficult to remove clean in follow-up wet-cleaned, and then is retained on the wafer with fault (Defect) form.With the cobalt is example, and residual cobalt forms fault on wafer process is as follows: at first, in the APM processing procedure, unreacted metallic cobalt (Co) completely remains on the wafer; Secondly, break away from the transport process of reaction solution at wafer (Wafer), perhaps reaction solution/water drains and exposes to the open air when air, along with the increase of time and the rising of temperature, residual cobalt can with airborne oxygen reaction; Then, in the SPM manufacturing process for cleaning and in hydro-peening (As jet) processing procedure, cobalt oxide is difficult to be cleaned; At last, the formed fault of the residue of cobalt further shows especially after being covered by ILD (Inter-Layer dielectric, interlayer dielectric).
Summary of the invention
Defective at prior art, the purpose of this invention is to provide the inactive atmosphere device in a kind of wet-cleaned, prevent that active stronger metal and airborne oxygen from reacting, simultaneously, the atmosphere of pure gas also can be avoided airborne impure contaminating impurity wafer and other unexpected reaction.
Above-mentioned purpose of the present invention and other purpose are achieved through the following technical solutions: the inactive atmosphere device in a kind of wet-cleaned, it is characterized in that, and comprising: at least one non-active gas container, hold a kind of non-active gas in each container; A cleaning unit, this cleaning unit comprises: the blower fan filtering unit that is positioned at cleaning unit top, by pipeline and above-mentioned at least one non-active gas container and or air be connected, be used for sucking and filtering non-active gas or air, be positioned at the rinse bath at cleaning unit middle part, be positioned at the blast pipe of cleaning unit downside, be used for the cleaning unit gas inside is discharged; Be arranged in the air pump of gas pipeline, be used for recycling non-active gas.
Described cleaning unit also comprises a control unit, is used to control cleaning unit.
Also comprise an inactive atmosphere device control board, this inactive atmosphere device control board is electrically connected with non-active gas container and control unit, is used to determine which cleaning unit uses which kind of non-active gas or air in which step.
Described cleaning unit is certain cleaning unit in cleaning machine or the cleaning machine.
Described non-active gas is a nitrogen.
Described non-active gas is an inert gas.
Described blast pipe one end is connected with cleaning unit, and the other end is connected with blower fan filtering unit.
Owing to adopted device of the present invention, can make board interior layer gas body is non-active gas, thereby prevent active stronger metal and airborne oxygen generation oxidation reaction, simultaneously, kept the pure gas atmosphere in the board, thereby avoid airborne impure contaminating impurity wafer, and other unexpected reaction.
Description of drawings
Fig. 1 is a cleaning machine interior layer flow diagram;
Fig. 2 removes the process schematic diagram of unreacted complete metal oxidation for wet-cleaned in the autoregistration processing procedure;
Fig. 3 is the inactive atmosphere device end view in a kind of wet-cleaned of the present invention.
Embodiment
The present invention will be further described below in conjunction with accompanying drawing.
As shown in Figure 3, inactive atmosphere device in a kind of wet-cleaned, comprise at least one non-active gas container 4, can hold any non-active gas in each non-active gas container, the active relatively poor gas of nitrogen or other for example, or Ar in the inert gas or He, do not limit herein; Cleaning unit, this cleaning unit is specially cleaning machine 2 in the present embodiment, it comprises: the blower fan filtering unit 1 that is positioned at cleaning machine 2 tops, this blower fan filtering unit 1 is connected with above-mentioned at least one non-active gas container 4 or air 5 by pipeline, is used for sucking and filtering non-active gas or air; Be positioned at the rinse bath 6 at cleaning machine 2 middle parts; Be positioned at the blast pipe 3 of cleaning machine 2 downsides, be used for cleaning machine 2 gas inside are discharged; Be arranged in the air pump 7 of gas pipeline, be used for recycling non-active gas; The main control unit (not shown) of cleaning machine itself is used to control cleaning machine; On the main control unit external integrated inactive atmosphere device control board (not shown), be used for during formula, realizing which kind of non-active gas which cleaning unit in what step, uses need to use how long wait function editor.
The other end of blast pipe 3 can be connected with blower fan filtering unit 1, thereby makes the gas in the cleaning machine 2 can be repeated to utilize.
With reference to Fig. 2, effect of the present invention is apparent: in the autoregistration processing procedure, it is as follows to remove the unreacted metal process with wet-cleaned: at first, in the APM processing procedure, unreacted metallic cobalt (Co) completely remains on the silicon chip; Secondly, break away from the transport process of reaction solution at wafer (Wafer), perhaps reaction solution/water drains and exposes to the open air when air, because board inner laminar flow gas is non-active gas, therefore residual cobalt oxidation can not take place; In SPM processing procedure and hydro-peening processing procedure subsequently, the residue of metallic cobalt is cleaned totally.Because the present invention makes the atmosphere that has kept pure gas in the board, therefore also avoided airborne impure contaminating impurity wafer, and other unexpected reaction.
Certainly; the present invention also can have other embodiment; under the situation of spirit that does not deviate from the present invention and essence; the person of ordinary skill in the field works as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of claim of the present invention.
Claims (7)
1. the inactive atmosphere device in the wet-cleaned is characterized in that, comprising:
At least one non-active gas container holds a kind of non-active gas in each container;
Cleaning unit, this cleaning unit comprises:
Be positioned at the blower fan filtering unit on cleaning unit top, by pipeline and above-mentioned at least one non-active gas container and or air be connected, be used for sucking and filtering non-active gas or air;
Be positioned at the rinse bath at cleaning unit middle part;
Be positioned at the blast pipe of cleaning unit downside, be used for the cleaning unit gas inside is discharged;
Be arranged in the air pump of gas pipeline, be used for recycling non-active gas.
2. the inactive atmosphere device in a kind of wet-cleaned according to claim 1 is characterized in that, described cleaning unit also comprises a control unit, is used to control cleaning unit.
3. the inactive atmosphere device in a kind of wet-cleaned according to claim 2, it is characterized in that, also comprise an inactive atmosphere device control board, this inactive atmosphere device control board is electrically connected with non-active gas container and control unit, is used to determine which cleaning unit uses which kind of non-active gas or air in which step.
4. according to the inactive atmosphere device in each described a kind of wet-cleaned in the claim 1～3, it is characterized in that described cleaning unit is certain cleaning unit in cleaning machine or the cleaning machine.
5. the inactive atmosphere device in a kind of wet-cleaned according to claim 4 is characterized in that described non-active gas is a nitrogen.
6. the inactive atmosphere device in a kind of wet-cleaned according to claim 4 is characterized in that described non-active gas is an inert gas.
7. the inactive atmosphere device in a kind of wet-cleaned according to claim 4 is characterized in that, described blast pipe one end is connected with cleaning unit, and the other end is connected with blower fan filtering unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101875528A CN101447397A (en) | 2007-11-26 | 2007-11-26 | Inactive atmosphere device in wet cleaning |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101875528A CN101447397A (en) | 2007-11-26 | 2007-11-26 | Inactive atmosphere device in wet cleaning |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101447397A true CN101447397A (en) | 2009-06-03 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007101875528A Pending CN101447397A (en) | 2007-11-26 | 2007-11-26 | Inactive atmosphere device in wet cleaning |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101447397A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110743852A (en) * | 2019-09-03 | 2020-02-04 | 福建晶安光电有限公司 | Cleaning equipment and cleaning method for chemical wafer |
| CN111243944A (en) * | 2020-01-21 | 2020-06-05 | 长江存储科技有限责任公司 | Wafer processing method and wafer processing system |
| CN112201592A (en) * | 2020-09-11 | 2021-01-08 | 北京烁科精微电子装备有限公司 | Wafer cleaning device |
| CN112691532A (en) * | 2020-12-30 | 2021-04-23 | 上海至纯洁净系统科技股份有限公司 | High-speed exhaust mechanism for wet process equipment |
| CN112992652A (en) * | 2019-12-16 | 2021-06-18 | 中芯集成电路（宁波）有限公司 | Wet cleaning device and cleaning method |
-
2007
- 2007-11-26 CN CNA2007101875528A patent/CN101447397A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110743852A (en) * | 2019-09-03 | 2020-02-04 | 福建晶安光电有限公司 | Cleaning equipment and cleaning method for chemical wafer |
| CN112992652A (en) * | 2019-12-16 | 2021-06-18 | 中芯集成电路（宁波）有限公司 | Wet cleaning device and cleaning method |
| CN111243944A (en) * | 2020-01-21 | 2020-06-05 | 长江存储科技有限责任公司 | Wafer processing method and wafer processing system |
| CN112201592A (en) * | 2020-09-11 | 2021-01-08 | 北京烁科精微电子装备有限公司 | Wafer cleaning device |
| CN112691532A (en) * | 2020-12-30 | 2021-04-23 | 上海至纯洁净系统科技股份有限公司 | High-speed exhaust mechanism for wet process equipment |
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| PB01 | Publication | ||
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20090603 |