CN101442050B - Integrated circuits for multiple packaging modes - Google Patents
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- 230000005540 biological transmission Effects 0.000 claims description 5
- 239000000872 buffer Substances 0.000 claims description 5
- 238000005538 encapsulation Methods 0.000 claims 17
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- 239000000758 substrate Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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Abstract
Description
技术领域technical field
本发明关于一种集成电路,特别是一种适用于多种封装模式的集成电路。 The present invention relates to an integrated circuit, especially an integrated circuit suitable for multiple packaging modes. the
背景技术Background technique
近几年来,集成电路(integrated circuit;IC)不断地朝向微小化、集成化的方向前进。在单一IC里综合多种功能,致使其具有系统化的能力,乃IC发展的目标之一。然而,综合多种功能的IC可能造成制造步骤复杂及微芯片(die)面积过大,进而导致产品合格率降低。因而会将两种制造差异较大或较难综合的功能分成不同微芯片制造,而后再利用多微芯片(multi-die)封装技术,在一封装体内封装多种不同功能的微芯片,以达到系统化的目的。 In recent years, integrated circuits (integrated circuits; ICs) are constantly moving towards the direction of miniaturization and integration. It is one of the goals of IC development to integrate multiple functions in a single IC so that it has the ability to be systematized. However, integrating multiple functions of an IC may result in complex manufacturing steps and an excessively large die area, which in turn leads to a lower product yield. Therefore, the two functions with large manufacturing differences or difficult to integrate are divided into different microchips, and then multi-die packaging technology is used to package a variety of microchips with different functions in one package to achieve Systematic purpose. the
请参考图1,为公知的单一微芯片(single-die)封装结构。逻辑微芯片110上设有接合垫(pad)120,可通过接合线(bonding wire)的方式连接封装体(图中未示)的引脚(lead)130,以作为整个封装体的输出/输入引脚(I/O pin)。 Please refer to FIG. 1 , which shows a known single-die package structure. The
请参考图2,为公知的多微芯片封装结构。于图2中包含有一逻辑微芯片110及一存储微芯片150,其中存储微芯片150于该封装结构中设置于逻辑微芯片110的上方。逻辑微芯片110上设有一组接合垫120,用以连接封装体(图中未示)的引脚130。再者,逻辑微芯片110上设有另一组接合垫122,用以连接同一封装内、位于其上方的存储微芯片150的接合垫160,以使逻辑微芯片110可存取存储微芯片150上的数据。此外,存储微芯片150亦可具有另一组接合垫162,以连接封装体(图中未示)的引脚130。 Please refer to FIG. 2 , which shows a known multi-microchip packaging structure. In FIG. 2 , a
随着制造的演进,掩模和晶片价格高涨,通常要够多的销售量才能维持够低的研发和微芯片生产成本。然而现今市场,尤其是消费性电子产品,经常有许多细部规格的微小差异,导致任何一个产品市场规模都有限。传统微芯片在选择不同封装时,多为几种模式:1.不同脚位数目,但封装类型相同;2.相同脚位数目,但通过选择不同接合垫接出,提供不同功能,例如:输出 32-bits(32位)DRAM(Dynamic Random Access Memory;动态随机存取存储器)数据引脚(Data Pin),支持外挂32-Bits SDRM;和只接出16Bits SDRAM(Synchronous Dynamic Random Access Memory;同步动态随机存取存储器),仅支持外挂16-Bits SDRAM;3.相同脚位数目,但通过内部接合垫连接方式,选择不同内部电路功能。如某一接合垫连接至电压源引脚(VDD Pin)时,支持32-Bits SDRAM;连接至地线引脚(GND Pin)时,支持16-Bits SDRAM,亦即所谓的接合线选择机制(bonding option)。然而,目前的微芯片设计只能单独提供一种封装模式:单一微芯片封装或多微芯片封装,因此逻辑微芯片厂商必须设计不同的电路布局及数量的接合垫,以符合下游厂商的需求,以致于无法有效地节省微芯片的开发及生产成本。 As manufacturing evolves, mask and wafer prices run high, and often enough sales are needed to keep R&D and microchip production costs low enough. However, today's market, especially consumer electronics products, often has many small differences in detail specifications, resulting in a limited market size for any one product. When choosing different packages for traditional microchips, there are usually several modes: 1. Different numbers of pins, but the same package type; 2. The same number of pins, but different functions are provided by selecting different bonding pads, such as: output 32-bits (32 bits) DRAM (Dynamic Random Access Memory; Dynamic Random Access Memory) data pin (Data Pin), support external 32-Bits SDRM; and only connect 16Bits SDRAM (Synchronous Dynamic Random Access Memory; synchronous dynamic Random access memory), only supports external 16-Bits SDRAM; 3. The number of pins is the same, but through the internal bonding pad connection method, different internal circuit functions can be selected. For example, when a bond pad is connected to the voltage source pin (VDD Pin), it supports 32-Bits SDRAM; when it is connected to the ground pin (GND Pin), it supports 16-Bits SDRAM, which is the so-called bonding wire selection mechanism ( bonding option). However, the current microchip design can only provide one packaging mode: single microchip package or multi-microchip package, so logic microchip manufacturers must design different circuit layouts and the number of bonding pads to meet the needs of downstream manufacturers. As a result, the development and production costs of microchips cannot be effectively saved. the
发明内容Contents of the invention
鉴于以上的问题,本发明的目的之一在于提供一种适用于多种封装模式的集成电路,以解决先前技术所公开的无法有效地节省微芯片的开发及生产成本的问题。 In view of the above problems, one of the objectives of the present invention is to provide an integrated circuit suitable for various packaging modes, so as to solve the problem disclosed in the prior art that the development and production costs of microchips cannot be effectively saved. the
本发明的目的之一在于提供一种适用于多种封装模式的集成电路,可根据不同封装选择不同信号,致使一个芯片可以支持不同产品应用。 One of the objectives of the present invention is to provide an integrated circuit applicable to multiple packaging modes, and different signals can be selected according to different packaging modes, so that one chip can support different product applications. the
本发明的目的之一在于提供一种适用于多种封装模式的集成电路,可增加芯片的应用灵活性。 One of the objectives of the present invention is to provide an integrated circuit suitable for various packaging modes, which can increase the application flexibility of the chip. the
本发明的目的之一在于提供一种适用于多种封装模式的集成电路,可共用接合垫。 One of the objectives of the present invention is to provide an integrated circuit applicable to multiple packaging modes, which can share bonding pads. the
本发明的目的之一在于提供一种适用于多种封装模式的集成电路,可降低接合垫数目。 One of the objectives of the present invention is to provide an integrated circuit suitable for various packaging modes, which can reduce the number of bonding pads. the
本发明的目的之一在于提供一种适用于多种封装模式的集成电路,可降低芯片面积。 One of the objectives of the present invention is to provide an integrated circuit suitable for various packaging modes, which can reduce the chip area. the
本发明提出一种适用于一单微芯片与一多微芯片的封装模式的集成电路包含:核心电路、多个接合垫以及选择模块。其中,选择模块耦接于核心电路及多个接合垫之间,选择模块包含多个选择电路,用以依据控制信号来决定核心电路通过选择模块与多个接合垫之间的导通状态。当控制信号为第一数值时,核心电路与多个接合垫之间处于第一导通状态,集成电路用于单微芯片封装中,而当控制信号为第二数值时,核心电路与多个接合垫之间处于 第二导通状态,集成电路用于多微芯片封装中。其中该接合垫包括:多个第一接合垫,用以耦接一外部电路,并于该集成电路用于该单微芯片封装时耦接该核心电路;以及多个第二接合垫,用以耦接一微芯片,并于该集成电路用于该多微芯片封装时耦接该核心电路;其中,该核心电路耦接至该第一接合垫中之一与该第二接合垫中之一;以及该选择电路耦接至该第一接合垫中之一与该第二接合垫中之一。 The present invention proposes an integrated circuit suitable for a single microchip and a multi-microchip packaging mode, including: a core circuit, a plurality of bonding pads and a selection module. Wherein, the selection module is coupled between the core circuit and the plurality of bonding pads, and the selection module includes a plurality of selection circuits for determining the conduction state of the core circuit through the selection module and the plurality of bonding pads according to the control signal. When the control signal is the first value, the core circuit and the multiple bonding pads are in the first conduction state, and the integrated circuit is used in a single microchip package, and when the control signal is the second value, the core circuit and the multiple bonding pads are in the first conduction state. The bonding pads are in a second conduction state, and the integrated circuit is used in a multi-microchip package. Wherein the bonding pads include: a plurality of first bonding pads for coupling an external circuit and coupling the core circuit when the integrated circuit is used in the single microchip package; and a plurality of second bonding pads for coupling to the core circuit; coupled to a microchip and to the core circuit when the integrated circuit is used in the multi-microchip package; wherein the core circuit is coupled to one of the first bonding pads and one of the second bonding pads ; and the selection circuit is coupled to one of the first bonding pads and one of the second bonding pads. the
有关本发明的特征与实施,配合附图进行最佳实施例详细说明如下。 Regarding the features and implementation of the present invention, the best embodiments are described in detail as follows in conjunction with the accompanying drawings. the
附图说明Description of drawings
图1为公知的单微芯片(single-die)封装结构的示意图; Fig. 1 is the schematic diagram of known single microchip (single-die) packaging structure;
图2为公知的多微芯片(multi-die)封装结构的示意图; Fig. 2 is the schematic diagram of known multi-microchip (multi-die) packaging structure;
图3为根据本发明第一实施例的集成电路的示意图; 3 is a schematic diagram of an integrated circuit according to a first embodiment of the present invention;
图4为图3的集成电路于单微芯片封装下的结构示意图; Fig. 4 is the structural representation of the integrated circuit of Fig. 3 under single microchip package;
图5为图3的集成电路于多微芯片封装下的结构示意图; Fig. 5 is the structural representation of the integrated circuit of Fig. 3 under the multi-microchip package;
图6为根据本发明第二实施例的集成电路的示意图; 6 is a schematic diagram of an integrated circuit according to a second embodiment of the present invention;
图7为根据本发明第三实施例的集成电路的示意图; 7 is a schematic diagram of an integrated circuit according to a third embodiment of the present invention;
图8为根据本发明第四实施例的集成电路的示意图; 8 is a schematic diagram of an integrated circuit according to a fourth embodiment of the present invention;
图9为图8的集成电路于单微芯片封装下的结构示意图; Fig. 9 is a schematic structural view of the integrated circuit of Fig. 8 under a single microchip package;
图10为图8的集成电路于多微芯片封装下的结构示意图;以及 Figure 10 is a schematic structural view of the integrated circuit of Figure 8 under multi-microchip packaging; and
图11为根据本发明第五实施例的集成电路的示意图。 FIG. 11 is a schematic diagram of an integrated circuit according to a fifth embodiment of the present invention. the
主要元件符号说明 Description of main component symbols
110 逻辑微芯片 110 logic microchip
120 接合垫 120 splicing pad
122 接合垫 122 Bonding Pad
130 引脚 130 pins
150 存储微芯片 150 memory microchips
160 接合垫 160 Bonding Pads
162 接合垫 162 Bonding Pad
200 集成电路 200 integrated circuits
210 核心电路 210 core circuit
212 第一核心电路 212 The first core circuit
214 第二核心电路 214 Second core circuit
220a 接合垫群 220a Joint pad group
220b 接合垫群 220b Joint pad group
220c 接合垫群 220c joint pad group
220d 接合垫群 220d joint pad group
220e接合垫群 220e joint pad group
220f接合垫群 220f joint pad group
230接合垫 230 joint pad
230a接合垫 230a splicing pad
230b接合垫 230b Bonding Pad
230c接合垫 230c joint pad
230e接合垫 230e Bonding Pad
232a接合垫 232a Bonding Pad
232b接合垫 232b Bonding Pad
232c接合垫 232c Bonding Pad
232d接合垫 232d bonding pad
234a接合垫 234a bonding pad
234b接合垫 234b bonding pad
234c接合垫 234c bonding pad
234d接合垫 234d bonding pad
236a接合垫 236a bonding pad
236b接合垫 236b bonding pad
236c接合垫 236c bonding pad
236d接合垫 236d joint pad
236e接合垫 236e Bonding Pad
236f接合垫 236f bonding pad
236g接合垫 236g joint pad
236h接合垫 236h bonding pad
236i接合垫 236i Bonding Pad
236j接合垫 236j Bonding Pad
250接合垫 250 joint pads
250a接合垫 250a splicing pad
250b接合垫 250b splicing pad
250c接合垫 250c joint pad
270选择电路 270 selection circuit
272a选择电路 272a selection circuit
272b选择电路 272b selection circuit
272c选择电路 272c selection circuit
272d选择电路 272d selection circuit
274a选择电路 274a selection circuit
274b选择电路 274b selection circuit
274c选择电路 274c selection circuit
274d选择电路 274d selection circuit
280缓冲器 280 buffer
290控制电路 290 control circuit
292寄存器 292 registers
300第一封装体 300 first package body
302基板 302 substrate
310引脚 310 pins
310a引脚 310a pin
310b引脚 310b pin
310c引脚 310c pin
310d引脚 310d pin
310e引脚 310e pin
312a引脚 312a pin
312b引脚 312b pin
312c引脚 312c pin
312d引脚 312d pin
312e引脚 312e pin
312f引脚 312f pin
312g引脚 312g pin
312h引脚 312h pin
312i引脚 312i pin
314a引脚 314a pin
314b引脚 314b pin
314c引脚 314c pin
314d引脚 314d pin
314e引脚 314e pin
400集成电路 400 integrated circuits
410接合垫 410 joint pad
410a接合垫 410a bonding pad
410b接合垫 410b Bonding Pad
410c接合垫 410c Splice Pad
410d接合垫 410d joint pad
410e接合垫 410e Bonding Pad
412a接合垫 412a Bonding Pad
412b接合垫 412b Bonding Pad
412c接合垫 412c Bonding Pad
412d接合垫 412d Bonding Pad
412e接合垫 412e Bonding Pad
500第二封装体 500 second package body
510a引脚 510a pin
510b引脚 510b pin
510c引脚 510c pin
510d引脚 510d pin
510e引脚 510e pin
512a引脚 512a pin
512b引脚 512b pin
512c引脚 512c pin
512d引脚 512d pin
512e引脚 512e pin
600第三封装体 600 third package body
610a引脚 610a pin
610b引脚 610b pin
610c引脚 610c pin
610d引脚 610d pin
610e引脚 610e pin
具体实施方式Detailed ways
以下举出具体实施例以详细说明本发明的内容,并以附图作为辅助说明。说明中提及的符号为参照附图符号。 Specific embodiments are given below to describe the content of the present invention in detail, and the accompanying drawings are used as auxiliary descriptions. The symbols mentioned in the description are reference figures. the
参照图3,为根据本发明一实施例的集成电路200,适用于多种模式的封装,例如:单微芯片封装、多微芯片封装等。此集成电路200包括:核心电路210、多个接合垫230、250、选择电路270和控制电路290。 Referring to FIG. 3 , it is an
在此,核心电路210指用来提供该集成电路的主要核心功能的电路部份,一般来说,核心电路210会具有一个或多个信号输入/输出端信号。于本实施例中,为了达到可以适用于多种封装模式,信号输入端耦接至选择电路270,而选择电路270则耦接于二个接合垫230a、250a与核心电路210的信号输入端之间;信号输出端则耦接至二个接合垫230c、250c。控制电路290会根据集成电路200的封装模式而输出一控制信号给选择电路270,以致使选择电路270根据控制信号,而将核心电路210的信号输入端与接合垫230a、250a中之一电导通。于此,控制电路290上可具有寄存器292,用以存储决定集成电路200使用于何种封装模式所需的参数值,以输出控制选择电路270所需的控制信号,而寄存器292中所存储的数值则可经由固件或软件程序代码来写入变更。再者,虽然于本实施例中,上述控制信号系由控制电路290依其寄存器292的参数值来决定,但是本发明并不以此为限,诸如接合线选择(bonding option)等其他常见的模式选择机制,亦可于此使用。 Here, the
如此一来,此集成电路200即可应用于多种模式的封装。举例来说,当此集成电路200(为方便说明以下称第一集成电路200)应用于单微芯片封装时(请参照图3及4),将此集成电路200设置于第一封装体300的基板302上,再利用接合线技术(bonding),通过设置于基板302上的引脚310a、310b、310c、310d、310e,分别将第一集成电路200的接合垫230与另一封装体(为方便说明以下称第二封装体500)电连接。其中,第一封装体300与第二封装体500一般设置于一印刷电路板(printed circuit board)上,其间通过连接于其各自的引脚310a、310b、310c、310d、310e/510a、510b、510c、510d、510e的电路板上的导线(wiring)而相互连接。于此,第二封装体500可为SDRAM(Synchronous Dynamic Random Access Memory;同步动态随机存取存储器),其上具有另一集成电路(为方便说明以下称第二集成电路400),换句话说,第一集成电路200的接合垫230通过第一封装体300的引脚 310a/310b/310c/310d/310e、第二封装体500的引脚510a/510b/510c/510d/510e、及其间的电路板导线,连接至第二集成电路400上的接合垫410a/410b/410c/410d/410e,举例来说,接合垫230a通过引脚310a及引脚510a连接至第二集成电路400上的接合垫410a,而接合垫230c通过引脚310c及引脚510c连接至第二集成电路400上的接合垫410c。此时,选择电路270即是将核心电路210的信号输入端与接合垫230电导通。 In this way, the
而当此集成电路200(为方便说明以下称第一集成电路200)应用于多微芯片封装时(请参照图3及5),于第一集成电路200上设置有另一集成电路(为方便说明以下称第二集成电路400),例如:存储微芯片,并且通过接合垫250与接合垫410而彼此电连接。其中,第一集成电路200的接合垫230部份会对应于接合垫250,即耦接至同一选择电路270或同一信号输出端。第一集成电路200则设置于第一封装体300的基板302上,并利用未与接合垫250对应的接合垫230电连接基板302上的引脚310。举例来说,接合垫250a耦接至第二集成电路400上的接合垫410a,而对应于接合垫250a的接合垫230a则不与引脚310a电连接;同样地,接合垫250c耦接至第二集成电路400上的接合垫410c,而对应于接合垫250c的接合垫230c则不与引脚310c电连接;而未对应于接合垫250的接合垫230e则电连接至引脚310e。此时,选择电路270即是将核心电路210的信号输入端与接合垫250电导通。 And when this integrated circuit 200 (hereinafter referred to as the first
以另一种方式表示,接合垫230、250可分成用以耦接外部电路的第一接合垫(即接合垫230),以及用以耦接另一个集成电路的第二接合垫(即接合垫250)。换句话说,当应用于单微芯片封装时,选择电路270根据接收到的控制信号,而将核心电路210的信号输入端与第一接合垫(即接合垫230a)电导通;当应用于多微芯片封装时,选择电路270根据接收到的控制信号,而将核心电路210的信号输入端与第二接合垫(即接合垫250a)电导通。 Expressed in another way, the
并且,于核心电路210的信号输出端与接合垫230c、250c之间可耦接缓冲器280,用以缓冲,或者说是加强驱动,核心电路210所欲输出的信号。 Moreover, a
其中,选择电路270可利用多路转换器来实现,此多路转换器的输入端连接至接合垫230a、250a、输出端连接至核心电路210的信号输入端,以及其控制端则连接至控制电路290,以接收控制信号。举例来说,当此集成电路200应用于单微芯片封装时,控制电路290会输出一控制信号1给选择电路270,因而致使选择电路270将核心电路210的信号输入端与接合垫230a 电导通;反之,当应用于多微芯片封装时,控制电路290则会输出一控制信号0给选择电路270,因而致使选择电路270将核心电路210的信号输入端与接合垫250a电导通。 Wherein, the
于此,接合垫230、250可为单向传输(如图3所示),亦可为双向传输(如图6所示)。当采用单向传输的接合垫230、250时,核心电路210的信号输出端与选择电路270耦接至不同的接合垫230c、250c/230a、250a,如图3所示。而当采用双向传输的接合垫230、250时,核心电路210的信号输出端与选择电路270则耦接至相同的接合垫230b、250b,如图6所示。 Here, the
参照图7,为根据本发明另一实施例的集成电路200,适用于一第一模式与一第二模式的封装,例如:单微芯片封装与多微芯片封装。集成电路200包括:多个核心电路(为方便说明,以下以第一核心电路212与第二核心电路214为例)、多个接合垫230和选择电路272a、272b、272c、272d、274a、274b、274c、274d。 Referring to FIG. 7 , an
依序相邻的接合垫232a、232b/232c、232d/234a、234b/234c、234d可分别归类为接合垫群220a/220b/220c/220d,且接合垫群220a、220b/220c、220d会分别对应于第一核心电路212与第二核心电路214。 Sequentially
选择电路272a、272b、272c、272d、274a、274b、274c、274d耦接于接合垫230与第一核心电路212或第二核心电路214之间。 The
当集成电路200为第一模式的封装时,选择电路272a、272b、274a、274b将第一核心电路212与所对应的接合垫群220a、220c内的接合垫232a、232b、234a、234b电导通,以及选择电路272c、272d、274c、274d将第二核心电路214与所对应的接合垫群220b、220d内的接合垫232c、232d、234c、234d电导通。而当集成电路200为第二模式的封装时,选择电路272a、272b、272c、272d、274a、274b、274c、274d将同一核心电路与彼此至少相距一预定距离的接合垫230电导通,即选择电路272a、272b、274b、274d将第一核心电路212与接合垫232b、232d、234b、234d电导通,且选择电路272c、272d、274a、274c将第二核心电路214与接合垫232a、232c、234a、234c电导通。其中,此预定距离为根据接合线规则(bonding rule)所订定的距离。 When the
于此,可通过一控制电路290来根据第一模式或第二模式的封装(即根据集成电路200欲应用的封装模式)输出控制信号,以控制选择电路272a、272b、272c、272d、274a、274b、274c、274d的切换,即选择电路272a、272b、 272c、272d、274a、274b、274c、274d依据控制信号将接合垫230与核心电路(例如:第一核心电路212和第二核心电路214)电导通。其中,控制电路290上可具有寄存器292,用以存储决定集成电路200使用于何种封装模式所需的参数值,以输出控制选择电路272a、272b、272c、272d、274a、274b、274c、274d所需的控制信号。 Here, a
举例来说,于此选择电路272a、272b、272c、272d、274a、274b、274c、274d可利用多路转换器来实现,这些多路转换器耦接于核心电路与接合垫之间;当集成电路200应用于第一模式的封装时,控制电路290会输出一控制信号1给选择电路272a、272b、272c、272d、274a、274b、274c、274d,因而致使选择电路272a、272b、274a、274b将第一核心电路212与接合垫群220a、220c内的接合垫232a、232b、234a、234b电导通,以及选择电路272c、272d、274c、274d将第二核心电路214与接合垫群220b、220d内的接合垫232c、232d、234c、234d电导通;反之,当应用于第二模式的封装时,控制电路290则会输出一控制信号0给选择电路272a、272b、272c、272d、274a、274b、274c、274d,因而致使选择电路272a、272b、274b、274d将第一核心电路212与接合垫232b、232d、234b、234d电导通,且选择电路272c、272d、274a、274c将第二核心电路214与接合垫232a、232c、234a、234c电导通。 For example, here the
每一核心电路(第一核心电路212与第二核心电路214)具有一个或多个信号输入/输出端信号,分别耦接至选择电路的输出与输入,且信号输入端与信号输出端可分别相互对应。举例来说,参照图7,其中第一核心电路212的信号输入端耦接至选择电路272a、272b,而其所对应的信号输出端则耦接至选择电路274a、274b、274d;以及第二核心电路214的信号输入端耦接至选择电路272c、272d,而其所对应的信号输出端则耦接至选择电路274a、274c、274d。 Each core circuit (the
并且,耦接于核心电路(第一核心电路212和/或第二核心电路214)的信号输出端的选择电路274a、274b、274c、274d与接合垫234a、234b、234c、234d之间可耦接缓冲器280,以缓冲核心电路(第一核心电路212/第二核心电路214)欲输出的信号。 Moreover, the
于此,接合垫230可为单向传输(如图7所示),亦可为双向传输(如图8所示)。当采用单向传输的接合垫230时,同一核心电路(第一核心电路212/第二核心电路214)的信号输入端与信号输出端经由选择电路272a、272b、 272c、272d、274a、274b、274c、274d,而耦接至不同的接合垫232a、232b、232c、232d/234a、234b、234c、234d,如图7所示。 Here, the
而当采用双向传输的接合垫236a、236b、236c、236d时,同一核心电路(第一核心电路212/第二核心电路214)的信号输入端与信号输出端经由选择电路272a、272b、272c、272d、274a、274b、274c、274d,而耦接至相同的接合垫236a、236b、236c、236d,如图8所示。并且,当集成电路200应用于第一模式的封装时,第一核心电路212与接合垫群220e电导通,第二核心电路214与接合垫群220f电导通,而当集成电路200应用于第二模式的封装时,第一核心电路212和第二核心电路214则依序交错与接合垫236a、236b、236c、236d电导通。于此,虽以依序交错为例,然实际上,只要同一核心电路所耦接至接合垫彼此相距符合接合线规则(bonding rule)的预定距离即可。 And when using the bonding pads 236a, 236b, 236c, 236d for bidirectional transmission, the signal input end and signal output end of the same core circuit (
因此,集成电路200即可应用于多种模式的封装。举例来说,当集成电路200(为方便说明以下称第一集成电路200)应用于单微芯片封装时(请参照第8及9图),将集成电路200设置于第一封装体300的基板302上,将第一集成电路200上的接合垫230电连接至设置于基板302上的引脚312a、312b、312c、312d、312e、312f、312g、312h、312i。其中,接合垫群220f的接合垫经由引脚312e、312f、312g、312h、312i电连接至第二封装体500的引脚512a、512b、512c、512d、512e,而接合垫群220e的接合垫经由引脚312a、312b、312c、312d电连接至第三封装体600的引脚610a、610b、610c、610d,而一般来说,第一、第二、及第三封装体300、500、600均设置于一印刷电路板上。此时,选择电路272a、272b、272c、272d、274a、274b、274c、274d是将第一核心电路212与接合垫群220e电导通,以及将第二核心电路214与接合垫群220f电导通。其中,第二封装体500可为SDRAM,其上具有另一集成电路(为方便说明以下称第二集成电路400),于此第一集成电路200可经由其接合垫群220f、引脚312e、312f、312g、312h、312i及引脚510a/510b/510c/510d/510e连接至第二集成电路400上的接合垫,以使第二核心电路214可以存取存储于第二集成电路400上的数据;而第三封装体600可为一功能电路,于此第一集成电路200可经由其接合垫群220e及引脚312a、312b、312c、312d连接至第三封装体600的引脚610a、610b、610c、610d,以控制第三封装体600的运作。 Therefore, the
而当集成电路200(为方便说明以下称第一集成电路200)应用于多微芯片封装时(请参照图7、8及10),第一集成电路200则设置于第一封装体300的基板302上,且于第一集成电路200上设置有另一集成电路(为方便说明以下称第二集成电路400),例如:存储微芯片。于此,第一集成电路200通过接合垫236b、236d、236f、236h、236j分别与第二集成电路400的接合垫412a、412b、412c、412d、412e而彼此电连接,而第一集成电路200上不相邻的接合垫236a、236c、236e、236g、236i则经由设置于第一封装体300的基板302上的引脚314a、314b、314c、314d、314e,而电连接第三封装体600的引脚610a、610b、610c、610d、610e,以控制第三封装体600的运作。此时,选择电路272a、272b、272c、272d、274a、274b、274c、274d是将同一核心电路与不相邻的接合垫230电导通,例如:选择电路272a、272b、274b、274d将第一核心电路212与接合垫232b、232d、234b、234d电导通,且选择电路272c、272d、274a、274c将第二核心电路214与接合垫232a、232c、234a、234c电导通。 And when the integrated circuit 200 (hereinafter referred to as the first
通过如上述将欲接合线连接至同一集成电路的接合垫切换成间隔一预定距离、或是其间隔有其他接合垫的设计,则本实施例的集成电路(或微芯片)使用于多微芯片封装时,即可符合接合线规则对于接合线之间须具有一定距离间隔的要求。同时,当切换成单微芯片封装模式时,连接到同一外部封装体的多个接合垫,又可以切换成集中在连续的位置配置,而方便印刷电路板上的导线布局。 By switching the bonding pads to be connected to the same integrated circuit with a predetermined distance as described above, or having other bonding pads spaced therebetween, the integrated circuit (or microchip) of this embodiment is used for multi-microchip When packaged, it can meet the requirements of the bonding wire rule that there must be a certain distance between the bonding wires. At the same time, when switching to a single microchip packaging mode, multiple bonding pads connected to the same external package can be switched to be concentrated in a continuous position, which facilitates the wiring layout on the printed circuit board. the
此外在另一实施例中,接合垫230可在某一模式下属于输入接合垫(input pad),而在另一种模式下属于输出接合垫(output pad)如图11所示。于此实施例中,当控制电路290输出控制信号1给选择电路274a、274b、274c、274d时,因而致使选择电路274a、274b将第一核心电路212的信号输出端与接合垫236a、236b电导通。同样的,也使得选择电路274c、274d将第二核心电路214的信号输出端与接合垫236c、236d电导通。因此,于此实施例中当控制信号为1的模式下,接合垫230属于输出接合垫。于此,当集成电路200应用于控制信号为1的模式封装时,第一核心电路212与接合垫群220e电导通,第二核心电路214与接合垫群220f电导通。 Furthermore, in another embodiment, the
反之,当控制电路290输出控制信号0给选择电路272a、272b、272c、272d时,因而致使选择电路272a、272b将第一核心电路212的信号输入端 与接合垫236b、236d电导通。同样地,也使得选择电路272c、272d将第二核心电路214的信号输入端与接合垫236a、236c电导通。因此,于此实施例中当控制信号为0的模式下,接合垫230属于输入接合垫。于此,当集成电路200应用于控制信号为0的模式封装时,第一核心电路212和第二核心电路214则依序交错与接合垫236a、236b、236c、236d电导通。 Conversely, when the
因此,图11的应用例子,可通过调整控制信号为1,而应用于单微芯片封装,可参照上述图9的详细说明。反之,当控制信号为0时,则可应用多微芯片封装,可参照上述图10的详细说明。 Therefore, the application example in FIG. 11 can be applied to a single microchip package by adjusting the control signal to 1, and reference can be made to the detailed description of FIG. 9 above. On the contrary, when the control signal is 0, multi-microchip packaging can be applied, and the detailed description of the above-mentioned FIG. 10 can be referred to. the
如上所述,第3-6图中的实施例与第7-11图中的实施例不同的处在于:前者系有部份接合垫乃位于集成电路当中较靠近内侧的位置,以方便于多微芯片封装时与同一封装体中的其他微芯片相连接;而后者则将所有的接合垫均设置于集成电路的边缘上,再利用依序交错的接合垫配置来满足多微芯片封装时对接合线规则的要求。但是不论是哪一种实施方式,本发明通过电路设计,可根据不同封装选择不同信号,致使一个芯片可以支持不同产品应用,进而增加芯片的应用灵活性,且有效地降低接合垫数目和芯片面积。举例来说,若一应用为单芯片包装208脚位,其中有80脚位为对另一特定芯片的对接信号,因此采取旧的方式,必须至少有外部接合垫208个和内部接合垫80个,共288个。但根据本发明的芯片可以保持208个接合垫,不需增加80个接合垫,并且可改用128脚位的封装体;或者保持288个接合垫,但再采用多芯片封装时,仍有额外80个接合垫的脚位,可以输出其余应用信号,增加更多的产品功能。 As mentioned above, the difference between the embodiments in Figures 3-6 and the embodiments in Figures 7-11 is that in the former, some bonding pads are located in the inner side of the integrated circuit to facilitate multiple When the microchip is packaged, it is connected to other microchips in the same package; while the latter places all the bonding pads on the edge of the integrated circuit, and then uses the sequentially staggered bonding pad configuration to meet the requirements for multi-microchip packaging. Requirements for seam wire rules. But no matter what kind of implementation, the present invention can select different signals according to different packages through circuit design, so that one chip can support different product applications, thereby increasing the application flexibility of the chip, and effectively reducing the number of bonding pads and chip area . For example, if an application has 208 pins in a single chip package, 80 pins are the docking signals to another specific chip, so in the old way, there must be at least 208 external bond pads and 80 internal bond pads , a total of 288. But according to the chip of the present invention, 208 bonding pads can be kept without increasing 80 bonding pads, and a package body with 128 pins can be used instead; 80 pins of bonding pads can output other application signals to add more product functions. the
虽然本发明已以较佳实施例公开如上,然其并非用以限定本发明。任何所属技术领域中的普通技术人员,在不脱离本发明的精神和范围的情况下,可进行各种更动与修改。因此,本发明的保护范围以所提出的权利要求的范围为准。 Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Various changes and modifications can be made by those skilled in the art without departing from the spirit and scope of the present invention. Accordingly, the protection scope of the present invention shall be determined by the scope of the appended claims. the
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