CN101442022A - Method for manufacturing copper conductor with improvable quality - Google Patents
Method for manufacturing copper conductor with improvable quality Download PDFInfo
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- CN101442022A CN101442022A CNA2007101707471A CN200710170747A CN101442022A CN 101442022 A CN101442022 A CN 101442022A CN A2007101707471 A CNA2007101707471 A CN A2007101707471A CN 200710170747 A CN200710170747 A CN 200710170747A CN 101442022 A CN101442022 A CN 101442022A
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- Prior art keywords
- copper
- layer
- copper conductor
- manufacture method
- improving quality
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- 239000010949 copper Substances 0.000 title claims abstract description 89
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 89
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 86
- 239000004020 conductor Substances 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 238000009792 diffusion process Methods 0.000 claims abstract description 17
- 238000007747 plating Methods 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000126 substance Substances 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims description 24
- 230000005518 electrochemistry Effects 0.000 claims description 13
- 238000000231 atomic layer deposition Methods 0.000 claims description 11
- 238000005516 engineering process Methods 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 4
- 150000001879 copper Chemical class 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 150000003376 silicon Chemical class 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 3
- 230000004888 barrier function Effects 0.000 abstract 2
- 238000007517 polishing process Methods 0.000 abstract 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- IZJSTXINDUKPRP-UHFFFAOYSA-N aluminum lead Chemical compound [Al].[Pb] IZJSTXINDUKPRP-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
The invention provides a copper conductor manufacturing method capable of improving quality, which is used for manufacturing a copper conductor on a silicon substrate. The prior art carries out a copper electrochemical plating process on an seed layer directly and part of the seed layer can not be plated with copper due to the poorer hydrophilic performance of the seed layer, so the manufactured copper conductor has notches and the quality of the copper conductor is seriously affected. The copper conductor manufacturing method capable of improving quality comprises the following steps: firstly, depositing a diffusion barrier layer on the silicon substrate; secondly, depositing a copper seed layer on the diffusion barrier layer; thirdly, generating a hydrophilic oxide layer on the seed layer; fourthly, generating a copper plating layer on the hydrophilic oxide layer through a copper electrochemical plating process; and finally, carrying out a chemical and mechanical polishing process on the copper plating layer to make the copper conductor. The method can avoid that part of the seed layer is not plated with copper to cause the notches on the copper conductor, and can greatly improve the quality of the copper conductor.
Description
Technical field
The present invention relates to the plain conductor manufacturing process, relate in particular to a kind of copper conductor manufacture method of improving quality.
Background technology
Along with constantly the reducing of the minimum feature size (CD) of semiconductor device (developed into 90 present nanometers or 60 nanometers from initial 1 millimeter, and in several years of future, will enter the epoch of 45 nanometers and 22 nanometers), current density in the plain conductor constantly increases, response time constantly shortens, and the conventional aluminum lead does not more and more satisfy the needs that CD constantly dwindles.Copper conductor than low resistivity of aluminum conductor and high anti-electron transfer ability, becomes the main flow technology of semicon industry with it gradually.The manufacture method of copper conductor mainly comprises step, electrochemistry copper facing step and the chemical-mechanical polishing step of the inculating crystal layer of deposition diffusion impervious layer step, deposited copper.
But be prone to breach on the copper conductor of making by above-mentioned manufacture method, those breach can increase the resistance value of copper conductor, can cause the broken string of plain conductor when serious.Through experimental observation and analysis, the reason that occurs breach on the discovery copper conductor is that the inculating crystal layer hydrophilicity of copper is bad, when carrying out electrochemistry copper facing in chemical plating fluid, regional area is failed plated with copper on the inculating crystal layer, follow-uply produces breach at copper conductor when carrying out chemico-mechanical polishing.
Therefore, how to provide a kind of copper conductor manufacture method of improving quality, become the technical problem that industry needs to be resolved hurrily with the generation of avoiding above-mentioned breach and the quality that improves copper conductor greatly.
Summary of the invention
The object of the present invention is to provide a kind of copper conductor manufacture method of improving quality, can avoid the regional area of inculating crystal layer not plate copper and form breach by described manufacture method, and can improve the quality of copper conductor greatly at copper conductor.
The object of the present invention is achieved like this: a kind of copper conductor manufacture method of improving quality, be used for manufactured copper lead on silicon substrate, and it may further comprise the steps: (1) deposits diffusion impervious layer on this silicon substrate; (2) inculating crystal layer of deposited copper on this diffusion impervious layer; (3) generate hydrophilic oxide layer at this inculating crystal layer; (4) on this hydrophilic oxide layer, generate copper coating by the electrochemistry copper-plating technique; (5) on copper coating, carry out CMP (Chemical Mechanical Polishing) process and form copper conductor.
In the copper conductor manufacture method of the above-mentioned quality improved, this diffusion impervious layer comprises the tantalum nitride layer and the tantalum layer of stacked on top of one another.
In the copper conductor manufacture method of the above-mentioned quality improved, in step (1), by this diffusion impervious layer of atomic layer deposition technology deposit.
In the copper conductor manufacture method of the above-mentioned quality improved, in step (2), by the inculating crystal layer of this copper of atomic layer deposition process deposits.
In the copper conductor manufacture method of the above-mentioned quality improved, in step (3), generate hydrophilic oxide layer at this inculating crystal layer by quick oxygen blow technology.
In the copper conductor manufacture method of the above-mentioned quality improved, this hydrophilic thickness of oxide layer scope is 5 to 15 nanometers.
With the direct electrochemistry copper-plating technique that on the inculating crystal layer of the relatively poor copper of hydrophilicity, directly carries out in the prior art, easily cause on the inculating crystal layer regional area not have plated with copper and on copper conductor, form breach and compare, the copper conductor manufacture method of improving quality of the present invention generates a hydrophilic oxide layer earlier on inculating crystal layer before carrying out the electrochemistry copper-plating technique, and then carry out electrochemistry copper-plating technique and CMP (Chemical Mechanical Polishing) process, so can be on inculating crystal layer plated with copper fully, avoid on copper conductor, producing breach, improved the quality of copper conductor greatly.
Description of drawings
The copper conductor manufacture method of improving quality of the present invention is provided by following embodiment and accompanying drawing.
Fig. 1 is the flow chart that improves the copper conductor manufacture method of quality of the present invention.
Embodiment
Below will be described in further detail the copper conductor manufacture method of improving quality of the present invention.
The copper conductor manufacture method of improving quality of the present invention is used for manufactured copper lead on silicon substrate, has the groove (also can comprise contact hole) that is used to hold described copper conductor on the described silicon substrate.Referring to Fig. 1, the copper conductor manufacture method of improving quality of the present invention is at first carried out step S1O, on described silicon substrate, deposit diffusion impervious layer, wherein, described diffusion impervious layer is the tantalum nitride layer (TaN) of stacked on top of one another and titanium nitride (TiN) layer and the titanium layer (Ti) of tantalum layer (Ta) or stacked on top of one another.In the present embodiment, described diffusion impervious layer is the tantalum nitride layer and the tantalum layer of stacked on top of one another, and it forms by atomic layer deposition technology (ALD) deposit, and described atomic layer deposition technology is carried out in corresponding atomic layer deposition board.
Then continue step S11, the inculating crystal layer of deposited copper on described diffusion impervious layer.In the present embodiment, by the inculating crystal layer of the described copper of atomic layer deposition process deposits, its can with step S10 in carry out in the same atomic layer deposition board.
Then continue step S12, generate hydrophilic oxide layer at described inculating crystal layer, described hydrophilic thickness of oxide layer scope is 5 to 15 nanometers.In the present embodiment, generate hydrophilic oxide layer by quick oxygen blow technology at described inculating crystal layer, described quick oxygen blow technology is carried out in carrying out the atomic layer deposition board of step S11; When making hydrophilic oxide layer, accelerate the rotary speed of silicon substrate, can accelerate the formation speed of hydrophilic oxide layer; Described hydrophilic thickness of oxide layer is 10 nanometers.
Then continue step S13, on described hydrophilic oxide layer, generate copper coating by the electrochemistry copper-plating technique, its detailed process is: at first described silicon substrate and top diffusion impervious layer and hydrophilic oxide layer thereof are arranged in the electrochemistry plating bath in the lump, has a large amount of copper ions in the described electrochemistry plating bath, anode (can be copper) is set in described electrochemistry plating bath then, and the copper coating of both positive and negative polarity on described inculating crystal layer that respectively anode and silicon substrate is electrically connected at DC power supply afterwards reaches certain thickness.
Then continue step S14, on copper coating, carry out CMP (Chemical Mechanical Polishing) process and form copper conductor.
Experiment showed, the breach that does not have appearance not have plated with copper to produce again on the copper conductor of making by the copper conductor manufacture method of improving quality of the present invention because of the inculating crystal layer regional area.
In sum, the copper conductor manufacture method of improving quality of the present invention generates a hydrophilic oxide layer earlier on inculating crystal layer before carrying out the electrochemistry copper-plating technique, and then carry out electrochemistry copper-plating technique and CMP (Chemical Mechanical Polishing) process, so can be on inculating crystal layer plated with copper fully, avoid on copper conductor, producing breach, improved the quality of copper conductor greatly.
Claims (7)
1, a kind of copper conductor manufacture method of improving quality is used for manufactured copper lead on silicon substrate, and it may further comprise the steps: (1) deposits diffusion impervious layer on this silicon substrate; (2) inculating crystal layer of deposited copper on this diffusion impervious layer; It is characterized in that this copper conductor manufacture method is further comprising the steps of: (3) generate hydrophilic oxide layer at this inculating crystal layer; (4) on this hydrophilic oxide layer, generate copper coating by the electrochemistry copper-plating technique; (5) on copper coating, carry out CMP (Chemical Mechanical Polishing) process and form copper conductor.
2, the copper conductor manufacture method of improving quality as claimed in claim 1 is characterized in that, this diffusion impervious layer is the tantalum nitride layer and the tantalum layer of stacked on top of one another.
3, the copper conductor manufacture method of improving quality as claimed in claim 1 is characterized in that, this diffusion impervious layer is the titanium nitride layer and the titanium layer of stacked on top of one another.
4, the copper conductor manufacture method of improving quality as claimed in claim 1 is characterized in that, in step (1), by this diffusion impervious layer of atomic layer deposition technology deposit.
5, the copper conductor manufacture method of improving quality as claimed in claim 1 is characterized in that, in step (2), by the inculating crystal layer of this copper of atomic layer deposition process deposits.
6, the copper conductor manufacture method of improving quality as claimed in claim 1 is characterized in that, in step (3), generates hydrophilic oxide layer by quick oxygen blow technology at this inculating crystal layer.
7, as claim 1 or the 6 described copper conductor manufacture methods of improving quality, it is characterized in that this hydrophilic thickness of oxide layer scope is 5 to 15 nanometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101707471A CN101442022A (en) | 2007-11-21 | 2007-11-21 | Method for manufacturing copper conductor with improvable quality |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101707471A CN101442022A (en) | 2007-11-21 | 2007-11-21 | Method for manufacturing copper conductor with improvable quality |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101442022A true CN101442022A (en) | 2009-05-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007101707471A Pending CN101442022A (en) | 2007-11-21 | 2007-11-21 | Method for manufacturing copper conductor with improvable quality |
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| Country | Link |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110970350A (en) * | 2018-09-28 | 2020-04-07 | 长鑫存储技术有限公司 | Method for preparing a diffusion barrier comprising an α -Ta layer and composite diffusion barrier |
-
2007
- 2007-11-21 CN CNA2007101707471A patent/CN101442022A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110970350A (en) * | 2018-09-28 | 2020-04-07 | 长鑫存储技术有限公司 | Method for preparing a diffusion barrier comprising an α -Ta layer and composite diffusion barrier |
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Open date: 20090527 |