CN101441846B - Energy recovery apparatus based on insulated gate bipolar transistor - Google Patents
Energy recovery apparatus based on insulated gate bipolar transistor Download PDFInfo
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- CN101441846B CN101441846B CN 200710165589 CN200710165589A CN101441846B CN 101441846 B CN101441846 B CN 101441846B CN 200710165589 CN200710165589 CN 200710165589 CN 200710165589 A CN200710165589 A CN 200710165589A CN 101441846 B CN101441846 B CN 101441846B
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/28—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using luminous gas-discharge panels, e.g. plasma panels
- G09G3/288—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using luminous gas-discharge panels, e.g. plasma panels using AC panels
- G09G3/296—Driving circuits for producing the waveforms applied to the driving electrodes
- G09G3/2965—Driving circuits for producing the waveforms applied to the driving electrodes using inductors for energy recovery
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/28—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using luminous gas-discharge panels, e.g. plasma panels
- G09G3/288—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using luminous gas-discharge panels, e.g. plasma panels using AC panels
- G09G3/291—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using luminous gas-discharge panels, e.g. plasma panels using AC panels controlling the gas discharge to control a cell condition, e.g. by means of specific pulse shapes
- G09G3/294—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using luminous gas-discharge panels, e.g. plasma panels using AC panels controlling the gas discharge to control a cell condition, e.g. by means of specific pulse shapes for lighting or sustain discharge
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
The invention discloses an energy recovery device, which comprises a charging device, a discharging device and a control device, wherein the charging device is used for releasing stored energy to an electrode of a discharge cell of a plasma display panel; the discharging device is used for releasing the energy on the electrode of the discharge cell of the plasma display panel into the charging device and storing the energy into the charging device; and the control device is used for controlling charging of the charging device and/or discharging of the discharging device. The energy recovery device can reduce circuit cost and the complexity of the energy recovery device.
Description
Technical Field
The invention relates to the field of displays, in particular to an energy recovery device based on an insulated gate bipolar transistor.
Background
The Display principle of a Plasma Display Panel (PDP) is that ultraviolet rays generated by gas discharge excite phosphors to emit light. However, during the discharge process, large power consumption increases the circuit cost. During discharge, the PDP is equivalent to a capacitor Cp whose impedance includes the impedance between the electrodes of the plasma display panel and the impedance of the igbt when turned on and off. When the voltage V issWhen applied to a panel driving circuit, the energy loss is 2C in a single periodpVs 2. If its frequency is f, its energy loss is 2fCpVs 2. If the energy recovery device is not adopted, the energy consumption of the input power supply end is very large.
By adopting the energy recovery circuit, the energy can be fed back to the screen capacitor, so that the energy loss of the input end power supply in the circuit can be reduced. In general, energy recovery devices achieve energy loss reduction mainly through energy recovery circuits. Most of the power tubes of the energy recovery circuit adopted at present are MOSFETs, and the number of the MOSFETs adopted is large, so that the cost and complexity of the circuit are increased.
Disclosure of Invention
The invention provides an energy recovery device based on an insulated gate bipolar transistor, which is used for reducing the circuit cost and complexity of the energy recovery device.
An energy recovery apparatus according to an embodiment of the present invention includes: a charging device for discharging energy stored therein to an electrode of a discharge cell of the plasma display panel; a discharge device for discharging energy on electrodes of discharge cells of the plasma display panel to the charging device for storage; and a control device for controlling the charging device to charge and/or the discharging device to discharge.
Wherein, charging device includes: inductor L2, screen capacitor Cp in series with inductor L2, diode D4 in series with inductor L2, and insulated gate bipolar transistor M1 in parallel with inductor L2, screen capacitor Cp, and diode D4. The charging process of the charging device is as follows: the current flows through the inductor L2, the diode D4, the igbt M1, and the panel capacitor Cp to form a resonant tank, and the panel capacitor (Cp) is charged.
Wherein, discharge device includes: inductor L1, screen capacitor Cp in series with inductor L1, diode D3 in series with inductor L1, and insulated gate bipolar transistor M2 in parallel with inductor L1, screen capacitor Cp, and diode D3. The discharge process of the discharge device is as follows: a current flows through the inductor L1, the diode D3, the igbt M2, and the panel capacitor Cp to form a resonant circuit, and the panel capacitor Cp is discharged.
The control device is composed of one or more power switch tubes. The on and off of the power switch tube are controlled by controlling the on and off of the grid of the power switch tube, so that the charging of the charging device and the discharging of the discharging device are controlled.
The energy recovery device according to the embodiment of the invention adopts a novel circuit topology structure (wherein, the retention period adopts the insulated gate bipolar transistor), thereby greatly saving the circuit cost, reducing the circuit complexity and simultaneously improving the energy recovery efficiency.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the invention without limiting the invention. In the drawings:
FIG. 1 is a schematic view of a typical three-electrode surface discharge type AC-PDP (alternating current plasma display panel);
fig. 2 is a circuit diagram of a conventional energy recovery device and a simplified circuit during resonance thereof;
FIG. 3 is a circuit diagram of an Insulated Gate Bipolar Transistor (IGBT) based energy recovery device according to an embodiment of the present invention; and
fig. 4 is a diagram of control timing of the corresponding switch shown in fig. 3 and an output waveform thereof.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings.
Fig. 1 is a schematic view of a structure of a typical three-electrode surface discharge type AC-PDP. The scan Electrode (9 scanning Electrode) Y and the sustain Electrode (sustain Electrode) X are formed on the Front substrate (Front Glass). Meanwhile, the scan electrode and the sustain electrode are coated with an MgO Dielectric Layer (Dielectric Layer). Address electrodes (Address electrodes) are formed on a Rear substrate (real Glass). Red, green, and blue phosphors are coated on the rear substrate and the Barrier Rib (Barrier Rib). The color PDP irradiates red, green, and blue phosphors with Vacuum Ultraviolet (VUV) rays emitted by gas discharge, so that the phosphors emit light to realize color display.
Fig. 2 is a circuit diagram of a conventional energy recovery device and a simplified circuit during resonance thereof.The resistor R is a parasitic impedance, and includes an on-resistance when the power switch is turned on. Von is the voltage drop of the diode. From the equivalent circuit of fig. 2, the equation for the screen voltage Vxy can be easily analyzed: <math><mrow><msub><mi>V</mi><mi>yx</mi></msub><mo>=</mo><mrow><mo>(</mo><mfrac><msub><mi>V</mi><mi>s</mi></msub><mn>2</mn></mfrac><mo>-</mo><msub><mi>V</mi><mi>on</mi></msub><mo>)</mo></mrow><mo>[</mo><mn>1</mn><mo>-</mo><msup><mi>e</mi><mfrac><mrow><mo>-</mo><mi>t</mi></mrow><mi>T</mi></mfrac></msup><mrow><mo>(</mo><mi>cos</mi><mi>ωt</mi><mo>-</mo><mfrac><mi>R</mi><mi>ωL</mi></mfrac><mi>sin</mi><mi>ωt</mi><mo>)</mo></mrow><mo>]</mo></mrow></math> . Wherein T is 2L/R, <math><mrow><mi>ω</mi><mo>=</mo><msqrt><mrow><mo>(</mo><mn>1</mn><mo>/</mo><msub><mi>LC</mi><mi>p</mi></msub><mo>)</mo></mrow><mo>-</mo><msup><mrow><mo>(</mo><mi>R</mi><mo>/</mo><mn>2</mn><mi>L</mi><mo>)</mo></mrow><mn>2</mn></msup></msqrt></mrow></math> . Consider (R/2L)2And R/ω L is negligible, so the screen voltage Vxy can be simplified as: <math><mrow><msub><mi>V</mi><mi>yx</mi></msub><mo>=</mo><mrow><mo>(</mo><mfrac><msub><mi>V</mi><mi>s</mi></msub><mn>2</mn></mfrac><mo>-</mo><msub><mi>V</mi><mi>on</mi></msub><mo>)</mo></mrow><mrow><mo>(</mo><mn>1</mn><mo>-</mo><msup><mi>e</mi><mfrac><mrow><mo>-</mo><mi>t</mi></mrow><mi>T</mi></mfrac></msup><mi>cos</mi><msup><mi>ω</mi><mo>′</mo></msup><mi>t</mi><mo>)</mo></mrow></mrow></math> wherein <math><mrow><msup><mi>ω</mi><mo>′</mo></msup><mo>=</mo><msqrt><mrow><mo>(</mo><mn>1</mn><mo>/</mo><msub><mi>LC</mi><mi>p</mi></msub><mo>)</mo></mrow></msqrt><mo>.</mo></mrow></math>
At ω ═ π, the screen voltage peak is <math><mrow><msub><mi>V</mi><mi>yx</mi></msub><mo>=</mo><mrow><mo>(</mo><mfrac><msub><mi>V</mi><mi>s</mi></msub><mn>2</mn></mfrac><mo>-</mo><msub><mi>V</mi><mi>on</mi></msub><mo>)</mo></mrow><mrow><mo>(</mo><mn>1</mn><mo>-</mo><msup><mi>e</mi><mrow><mfrac><mi>πR</mi><mn>2</mn></mfrac><msqrt><mfrac><mi>CR</mi><mn>2</mn></mfrac></msqrt></mrow></msup><mo>)</mo></mrow><mo>.</mo></mrow></math> By reducing the on-resistance of the power switching tube, the efficiency of the energy recovery device can be improved.
Fig. 3 is a circuit diagram of an energy recovery device according to an embodiment of the present invention. As shown in fig. 3, the energy recovery device according to the embodiment of the present invention includes a switching tube composed of a power switching tube S1, a power switching tube S2, an insulated gate bipolar transistor M1, M2, M3, and M4. The drains of the power switches S1 and S2 are connected to a power supply, the sources of the power switches S1 and S2 are respectively connected to the collectors of the insulated gate bipolar transistors M1 and M2, and the cathodes of the fast recovery diodes D3 and D4 are respectively connected to the collectors of the insulated gate bipolar transistors M2 and M1. The emitters of the insulated gate bipolar transistors M1 and M2 are connected to the collectors of the insulated gate bipolar transistors M3 and M4, respectively. Meanwhile, collectors of the insulated gate bipolar transistors M3 and M4 are respectively connected to two ends of the panel capacitor, one end of the inductor L1 is connected to an emitter of the insulated gate bipolar transistor M1, and the other end is connected to an anode of the diode D3. Similarly, one end of the inductor L2 is connected to the emitter of the igbt M2, and the other end is connected to the anode of the diode D4. The emitters of the insulated gate bipolar transistors M3 and M4 are grounded. The gates of the power switch tubes S1 and S2, the insulated gate bipolar transistors M1, M2, M3 and M4 are respectively connected to the signal control end of the control circuit, and the power switch tubes or the insulated gate bipolar transistors are controlled to be turned on or off by the control signals given by the control circuit.
In the circuit shown in fig. 3, an inductor L2, a panel capacitor Cp connected in series with the inductor L2, a diode D4 connected in series with the inductor L2, and an insulated gate bipolar transistor M1 connected in parallel with the inductor L2, the panel capacitor Cp, and the diode D4 constitute a charging device of the energy recovery device according to the embodiment of the present invention. The charging process of the charging device is as follows: the current flows through the inductor L2, the diode D4, the igbt M1, and the panel capacitor Cp to form a resonant tank, and the panel capacitor (Cp) is charged.
The inductor L1, the panel capacitor Cp connected in series with the inductor L1, the diode D3 connected in series with the inductor L1, and the insulated gate bipolar transistor M2 connected in parallel with the inductor L1, the panel capacitor Cp, and the diode D3 constitute a discharge device of the energy recovery device according to the embodiment of the present invention. The discharge process of the discharge device is as follows: a current flows through the inductor L1, the diode D3, the igbt M2, and the panel capacitor Cp to form a resonant circuit, and the panel capacitor Cp is discharged.
The control device consists of one or more power switch tubes. The on and off of the power switch tube are controlled by controlling the on and off of the grid of the power switch tube, so that the charging of the charging device and the discharging of the discharging device are controlled.
That is, the energy recovery device shown in fig. 3 uses an insulated gate bipolar transistor to replace the high-side and low-side holding power switch transistors in the conventional energy recovery device. Meanwhile, the energy recovery capacitors and the energy recovery high-side and low-side power switch tubes in the conventional energy recovery devices are not used in the energy recovery device according to the embodiment of the present invention. That is to say, the energy recovery device according to the embodiment of the invention uses a lot less power switch tubes than the conventional energy recovery device, and meanwhile, because the turn-on resistance of the insulated gate bipolar transistor is small and the saturation voltage is reduced, the efficiency of the system is greatly improved, the power consumption is reduced, and the cost is saved.
Fig. 4 is a diagram of control timing of the corresponding switch shown in fig. 3 and an output waveform thereof. One cycle period of the sustain period is divided into four phases: assume that at the initial time, the igbt M2 and M3 and the power switch S2 are turned on, the igbt M1 and M4 and the power switch S1 are turned off, and the voltage Vxy across the panel capacitor Cp remains constant at-Vs.
In the first stage (t0-t1), the IGBT transistors M2 and M3 are turned off, M1 is turned on, and the power switch S1And S2 is cut off, the capacitor Cp is in series resonance through the inductor L2, the diode D4 and the insulated gate bipolar transistor M1, and the voltage Vxy and the current Ixy on the screen capacitor Cp change along with time in a relation of Vxy(t)＝-Vscos(ω(t-t0))、 <math><mrow><msub><mi>i</mi><mi>xy</mi></msub><mrow><mo>(</mo><mi>t</mi><mo>)</mo></mrow><mo>=</mo><mfrac><msub><mi>V</mi><mi>s</mi></msub><msqrt><mi>L</mi><mo>/</mo><msub><mi>C</mi><mi>p</mi></msub></msqrt></mfrac><mi>sin</mi><mrow><mo>(</mo><mi>ω</mi><mrow><mo>(</mo><mi>t</mi><mo>-</mo><msub><mi>t</mi><mn>0</mn></msub><mo>)</mo></mrow><mo>)</mo></mrow></mrow></math> . Wherein, <math><mrow><mi>ω</mi><mo>=</mo><mn>1</mn><mo>/</mo><msqrt><msub><mi>LC</mi><mi>p</mi></msub></msqrt></mrow></math> is the resonant frequency. <math><mrow><msub><mi>i</mi><mi>L</mi></msub><mrow><mo>(</mo><mi>t</mi><mo>)</mo></mrow><mo>=</mo><msub><mi>i</mi><mi>xy</mi></msub><mrow><mo>(</mo><mi>t</mi><mo>)</mo></mrow><mo>=</mo><mfrac><msub><mi>V</mi><mi>s</mi></msub><msqrt><mi>L</mi><mo>/</mo><msub><mi>C</mi><mi>p</mi></msub></msqrt></mfrac><mi>sin</mi><mrow><mo>(</mo><mi>ω</mi><mrow><mo>(</mo><mi>t</mi><mo>-</mo><msub><mi>t</mi><mn>0</mn></msub><mo>)</mo></mrow><mo>)</mo></mrow></mrow></math> . This process avoids the abrupt screen capacitor charging and discharging process in the conventional circuit.
In the second phase (t1-t2), when the inductor current I is in the first phaseLAt 0, the screen capacitor voltage Vxy is equal to Vs, and at this time, the insulated gate bipolar transistors M4 and M1 and the power switch tube S1 are turned on, and the screen capacitor voltage Vs is kept unchanged.
The third and fourth phases are identical in principle to the first and second phases, except that the panel capacitance is resonant through inductor L1, diode D3, and igbt M2. In this circuit, the insulated gate bipolar transistors are all operated in a soft-switching state. If considering the insulated gate bipolar crystalThe relationship of the screen capacitance voltage with time can be changed to the following equation due to the influence of the parasitic resistance of the tube: <math><mrow><msub><mi>V</mi><mi>yx</mi></msub><mo>=</mo><msub><mrow><mo>-</mo><mi>V</mi></mrow><mi>s</mi></msub><msup><mi>e</mi><mfrac><mrow><mo>(</mo><mi>t</mi><mo>-</mo><mi>t</mi><mn>0</mn><mo>)</mo></mrow><mi>T</mi></mfrac></msup><mo>[</mo><mi>cos</mi><mi>ω</mi><mrow><mo>(</mo><mi>t</mi><mo>-</mo><msub><mi>t</mi><mn>0</mn></msub><mo>)</mo></mrow><mo>+</mo><mfrac><mi>R</mi><mrow><mn>2</mn><mi>ωL</mi></mrow></mfrac><mi>sin</mi><mi>ω</mi><mrow><mo>(</mo><mi>t</mi><mo>-</mo><msub><mi>t</mi><mn>0</mn></msub><mo>)</mo></mrow><mo>]</mo></mrow></math> . As can be seen from the above formula, the voltage peak value of the screen capacitor is close to Vs, which is obviously different from the voltage peak value of the screen capacitor of the traditional energy recovery device being close to Vs/2, and the energy recovery efficiency is greatly improved.
In conclusion, the insulated gate bipolar transistor is adopted in the holding period, the advantages of the power field effect transistor and the power transistor are integrated, the insulated gate bipolar transistor has the advantages of high input impedance, high working speed, good thermal stability, simple driving circuit, low on-state voltage, high voltage resistance, large current bearing and the like, and therefore power consumption is greatly reduced. Meanwhile, the energy recovery capacitor is not adopted in the energy recovery device like the traditional energy recovery device, so that compared with the traditional energy recovery device, the energy recovery capacitor and the corresponding energy recovery power tube in the traditional energy recovery device are saved, and the circuit cost is greatly reduced.
The above description is only an example of the present invention, and is not intended to limit the present invention, and it is obvious to those skilled in the art that various modifications and variations can be made in the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (3)
1. An insulated gate bipolar transistor-based energy recovery device, comprising:
a charging device for discharging energy stored therein to an electrode of a discharge cell of the plasma display panel;
the discharging device is used for releasing the energy on the electrode into the charging device for storage; and
a control device for controlling the charging device to charge and/or the discharging device to discharge, wherein the charging device comprises: a first inductor (L2), a screen capacitor (Cp) in series with the first inductor (L2), a first diode (D4) in series with the first inductor (L2), and a first insulated gate bipolar transistor (M1) in parallel with the first inductor (L2), the screen capacitor (Cp), and the first diode (D4);
the discharge device includes: a second inductor (L1), the screen capacitor (Cp) in series with the second inductor (L1), a second diode (D3) in series with the second inductor (L1), and a second insulated gate bipolar transistor (M2) in parallel with the second inductor (L1), the screen capacitor (Cp), and the second diode (D3);
the control device includes:
a first power switch tube (S1), the drain electrode of which is connected with the power supply;
a second power switch tube (S2), the drain electrode of which is connected with the power supply;
the first insulated gate bipolar transistor (M1), the collector is connected with the source of the first power switch tube (S1);
the second insulated gate bipolar transistor (M2), the collector is connected with the source of the second power switch tube (S2);
a third insulated gate bipolar transistor (M3) having a collector connected to the emitter of the first insulated gate bipolar transistor (M1) and an emitter grounded;
and a fourth insulated gate bipolar transistor (M4) having a collector connected to the emitter of the second insulated gate bipolar transistor (M2) and an emitter grounded.
2. The energy recovery device of claim 1, wherein the charging process of the charging device is: a current forms a resonant loop through the first inductor (L2), the first diode (D4), the first insulated gate bipolar transistor (M1), and the panel capacitor (Cp), charging the panel capacitor (Cp).
3. The energy recovery device of claim 1, wherein the discharging process of the discharging device is: a current forms a resonant circuit through the second inductor (L1), the second diode (D3), the second insulated gate bipolar transistor (M2), and the panel capacitor (Cp), discharging the panel capacitor (Cp).
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710165589 CN101441846B (en) | 2007-11-19 | 2007-11-19 | Energy recovery apparatus based on insulated gate bipolar transistor |
| PCT/CN2008/073106 WO2009065358A1 (en) | 2007-11-19 | 2008-11-19 | Energy recovery device based on isolated gate bipolarity transistors |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200710165589 CN101441846B (en) | 2007-11-19 | 2007-11-19 | Energy recovery apparatus based on insulated gate bipolar transistor |
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| CN101441846A CN101441846A (en) | 2009-05-27 |
| CN101441846B true CN101441846B (en) | 2011-09-07 |
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| CN103594051A (en) * | 2013-10-31 | 2014-02-19 | 南京信息工程大学 | Modeling analysis method for DPLD tube in plasma display panel television column driver chip |
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| CN101814266B (en) * | 2010-04-27 | 2011-12-07 | 四川长虹电器股份有限公司 | Method for driving IGBT in PDP display screen line driving chip |
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| CN1458642A (en) * | 2002-05-14 | 2003-11-26 | 三星Sdi株式会社 | Plasma display screen driving method and device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| FR2858872A1 (en) * | 2003-08-14 | 2005-02-18 | Thomson Plasma | GENERATION OF DESCENDING FRONTS WITH ENERGY RECOVERY IN A PLASMA PANEL |
| US7327334B2 (en) * | 2005-05-24 | 2008-02-05 | Chunghwa Picture Tubes, Ltd. | Plasma display panel driver circuit having two-direction energy recovery through one switch |
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- 2007-11-19 CN CN 200710165589 patent/CN101441846B/en not_active Expired - Fee Related
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- 2008-11-19 WO PCT/CN2008/073106 patent/WO2009065358A1/en active Application Filing
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1417763A (en) * | 2001-11-09 | 2003-05-14 | 松下电器产业株式会社 | Energy recovering circuit for driving capacitive load |
| CN1458642A (en) * | 2002-05-14 | 2003-11-26 | 三星Sdi株式会社 | Plasma display screen driving method and device |
| CN1536548A (en) * | 2003-04-07 | 2004-10-13 | Lg������ʽ���� | Plasma display plate and its driving method |
| JP2005266460A (en) * | 2004-03-19 | 2005-09-29 | Matsushita Electric Ind Co Ltd | Driving substrate and semiconductor power module mounted on the same |
| JP2005316360A (en) * | 2004-03-31 | 2005-11-10 | Matsushita Electric Ind Co Ltd | Driving device for plasma display panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103594051A (en) * | 2013-10-31 | 2014-02-19 | 南京信息工程大学 | Modeling analysis method for DPLD tube in plasma display panel television column driver chip |
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| CN101441846A (en) | 2009-05-27 |
| WO2009065358A1 (en) | 2009-05-28 |
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