CN101441545A - Capacitance type touch control screen and manufacturing method thereof - Google Patents

Abstract

The invention relates to a capacitive touch screen, which includes a substrate, and an ITO layer, an insulating layer, a circuit layer and a protective layer arranged on the same side of the substrate. The traces of the second axis intersect each other, the traces of the first axis and the traces of the second axis are arranged perpendicular to each other; Two adjacent units are electrically connected through a metal bridge, and an insulating block is provided between the metal bridge and the trace of the second axis to insulate the two. By arranging the ITO layer containing both the first axis trace and the second axis trace on the same side of the substrate, the thickness of the entire film layer is thinned, which simplifies the structure of the entire touch screen and reduces the production cost, and the light transmission of the touch screen rate increased. The invention also discloses a processing method for manufacturing the capacitive touch screen.

Description

Capacitive touch screen and manufacturing method thereof

【Technical field】

The present invention relates to a capacitive touch screen, and more specifically, to a capacitive touch screen and a manufacturing method of the capacitive touch screen.

【Background technique】

Touch screens have been widely used in various electronic products. The user can touch the screen with a finger or a special pen to generate a change in electrical signal, and then recognize and select the text, symbols, menus, etc. displayed on the display device behind the touch screen to realize the input operation of the device.

Touch screens are generally divided into resistive, electromagnetic and capacitive types. The working principle of capacitive touch screens is to use the current induction of the human body to work. A traditional capacitive touch screen is structured on a four-layer printed circuit board, which is a ground layer, an X-axis trace, a Y-axis trace, and a circuit layer. Such a capacitive touch screen is expensive to manufacture.

In order to reduce production costs, the capacitive touch screen is designed as a two-layer composite glass screen. As shown in Figures 1, 2, and 3, a layer of ITO (Indium Tin Oxide, indium tin oxide) 20a', 20b' is coated on both sides of the glass substrate 10', and these two layers of ITO layers 20a', 20b' X-axis traces 21 ′ and Y-axis traces 22 ′ are respectively arranged inside, and the X-axis traces 21 ′ and Y-axis traces 22 ′ are usually arranged in complementary gourd shapes, as shown in FIGS. 2 and 3 . Then, insulating layers 30a', 30b' are set on the ITO layer, and SiO2 can be used for the insulating layers 30a', 30b'. The upper side of the glass substrate 10' is the film surface, and the lower side is the air surface. On the insulating layer 30a' of the air surface, a circuit layer 40' is further provided, and is electrically connected to the X-axis trace 21' and the Y-axis trace 22' respectively. A protective layer 50' is then provided on the circuit layer 40', and the protective layer 50' can be a thin layer of silica glass. The intersection of the two wire traces 21', 22' is insulated by the glass substrate 10, and the two wire traces 21', 22' are connected to the IC through the electrical connections arranged around them in the circuit layer. When a finger touches the touch screen, the electric field of the human body, the user and the surface of the touch screen form a coupling capacitor. For high-frequency currents, the capacitor is a direct conductor, so the finger absorbs a very small current from the contact point. This current flows out of the electrodes on the four corners of the touch screen respectively, and the current flowing through these four electrodes is proportional to the distance from the finger to the four corners. The controller obtains the touch point by accurately calculating the four current ratios. location information.

Since this capacitive touch screen is provided with ITO layers 20a', 20b' on both sides of the glass substrate 10, the thickness of the entire touch screen is increased. During processing, it is necessary to process the ITO layer and the insulating layer on one side of the glass substrate first, and when processing on the other side of the glass substrate, it is necessary to protect the processed film layer on the first side of the glass substrate, and process It is very inconvenient, and it is easy to damage the processed film layer, resulting in a high rate of defective products.

【Content of invention】

The technical problem to be solved by the present invention is to provide a film layer only on one side of the substrate to solve the problem of inconvenient processing in the capacitive touch screen that needs to be processed on both sides of the substrate. Capacitive touch screen.

The technical solution adopted by the present invention to solve its technical problems is: to construct a capacitive touch screen, including a substrate, an ITO layer, an insulating layer, a circuit layer and a protective layer arranged on the same side of the substrate, and the ITO layer is composed of a plurality of First axis traces parallel to each other and a plurality of second axis traces parallel to each other are intersected, and the first axis traces and the second axis traces are arranged perpendicular to each other; each of the first axis traces is intersected by a plurality of second axis traces The two-axis trace is divided into multiple units, and two adjacent units in the same first-axis trace are electrically connected through a metal bridge, and an insulating block is provided between the metal bridge and the second-axis trace to insulate them.

In the capacitive touch screen of the present invention, the metal bridge is located in the circuit layer.

In the capacitive touch screen of the present invention, the insulating block is located in the insulating layer.

In the capacitive touch screen according to the present invention, the outline of the overlapping portion of the metal bridge and the trace of the second axis is contained by the outline of the insulating block.

Another technical problem to be solved by the present invention is to provide a processing method of a capacitive touch screen in which the film layer is arranged on one side of the substrate for the structure of the above capacitive touch screen.

The technical solution adopted by the present invention to solve another technical problem is to provide a method for processing a capacitive touch screen as described above, comprising the following steps:

S10, preparing the substrate, sputtering an ITO layer on the processed side of the substrate, and processing the second axis trace and being separated by the second axis trace through the processes of sizing, developing, exposing, etching and stripping according to the preset pattern. first axis traces of multiple units;

S30, processing an insulating block with a preset pattern on the second axis trace at the intersection of the first axis trace and the second axis trace;

S50. Process a circuit layer according to a preset pattern, and process a metal bridge between two adjacent units in the same first axis trace;

S70, coating a protective layer.

In the processing method of the capacitive touch screen according to the present invention, in the step S30, a mask plate with a preset pattern is used to cover the ITO layer for sputtering, so that the insulating material is placed on the first axis trace and the second axis trace. The intersections of the axis traces form the insulating blocks.

In the processing method of the capacitive touch screen of the present invention, in the step S30, a photosensitive insulating material is first coated on the ITO layer, and then the image-taking mask with a preset pattern is exposed and developed to form the insulation block.

In the processing method of the capacitive touch screen according to the present invention, the step S50 includes firstly sputtering the circuit layer, and then processing the said metal bridge.

In the processing method of the capacitive touch screen of the present invention, in the step S50, the metal bridge is formed by covering the substrate with a mask plate with a predetermined pattern and performing metal sputtering.

The second technical solution adopted by the present invention to solve another technical problem is to provide a method for processing a capacitive touch screen as described above, comprising the following steps:

S20. Prepare the substrate, process a circuit layer on the processed side of the substrate according to a preset pattern, and pre-process a metal bridge between two adjacent units in the same first axis trace;

S40, processing an insulating block with a preset pattern on the metal bridge at the intersection of the first axis trace and the second axis trace;

S60, sputtering the ITO layer, and processing the second axis traces and the first axis traces separated into multiple units by the second axis traces through the processes of sizing, exposure, development, etching and stripping according to the preset pattern; Adjacent units of the first axis trace are electrically connected through pre-processed metal bridges;

S80, coating a protective layer.

The capacitive touch screen implementing the present invention has the following beneficial effects: by setting the ITO layer containing both the first axis trace and the second axis trace on the same side of the substrate, compared with the prior art, it is necessary to arrange the ITO layer on both sides of the substrate and In terms of protective layers that need to be provided on both sides, a protective layer is omitted, so that the thickness of the entire film layer becomes thinner, thereby greatly simplifying the structure of the entire touch screen and reducing the manufacturing cost. And because there is only one ITO layer, the entire touch screen becomes more transparent, and the light transmittance is improved. This means that the brightness and contrast of the backlight located behind the touch screen can be improved, the required backlight level is lower, and the corresponding power consumption will be greatly reduced-making portable electronic products (such as mobile phones, PDAs, bank POS Terminals, etc.) can obtain longer working hours and save usage costs. Simultaneously implement the processing method of the capacitive touch screen of the present invention, avoid the trouble of needing to protect the processed film surface of the first side when processing the film surface of the second side in the prior art, and it is easier to process Convenient, at the same time, due to the omission of a layer of ITO layer and protective layer, the process is simpler and the consumables are lower.

The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

【Description of drawings】

FIG. 1 is a schematic diagram of layer structure of a capacitive touch screen in the prior art;

2 is a schematic diagram of the distribution of X-axis traces and Y-axis traces in the ITO layer of the capacitive touch screen in the prior art;

Fig. 3 is a structural schematic diagram of the intersection of the X-axis trace and the Y-axis trace in Fig. 2;

4 is a schematic diagram of the layer structure of the capacitive touch screen of the present invention;

5 is a schematic diagram of the distribution of the first axis trace and the second axis trace in the capacitive touch screen of the present invention;

6 is an enlarged view of the structure of the intersection of the first axis trace and the second axis trace in the first embodiment of the capacitive touch screen of the present invention;

Fig. 7 is A-A sectional view of Fig. 6;

Fig. 8 is a schematic flow chart of the first embodiment of the processing method of the capacitive touch screen according to the present invention;

9 is a schematic flow chart of a second embodiment of the method for processing a capacitive touch screen according to the present invention;

Fig. 10 is a schematic structural view of the intersection of the first axis trace and the second axis trace for making an ITO layer in the first embodiment of the processing method of the capacitive touch screen according to the present invention;

Fig. 11 is the pattern at the intersection of the first axis trace and the second axis trace of the mask plate adopted when making the ITO layer shown in Fig. 10;

12 is a schematic structural view of the intersection of the first axis trace and the second axis trace when making an insulating block in the first embodiment of the processing method of the capacitive touch screen according to the present invention;

Fig. 13 is the pattern at the intersection of the first axis trace and the second axis trace of the mask plate used when making the insulating block shown in Fig. 12;

14 is a schematic structural view of the intersection of the first axis trace and the second axis trace when making a metal bridge in the first embodiment of the processing method of the capacitive touch screen according to the present invention;

Fig. 15 is the pattern at the intersection of the first axis trace and the second axis trace of the mask plate adopted when making the metal bridge shown in Fig. 14;

FIG. 16 is a schematic structural view of the capacitive touch screen processed by the first embodiment of the capacitive touch screen processing method of the present invention at the intersection of the first axis trace and the second axis trace;

Fig. 17 is a B-B sectional view of Fig. 16;

Fig. 18 is an enlarged structural view of the intersection of the first axis trace and the second axis trace in the second embodiment of the capacitive touch screen of the present invention;

Fig. 19 is a C-C sectional view of Fig. 18;

Fig. 20 is a schematic flow chart of the third embodiment of the processing method of the capacitive touch screen according to the present invention;

Fig. 21 is a schematic flow chart of the fourth embodiment of the processing method of the capacitive touch screen according to the present invention;

Fig. 22 is a schematic structural view at the intersection of the first axis trace and the second axis trace when making a metal bridge in the third embodiment of the processing method of the capacitive touch screen according to the present invention;

Fig. 23 is the pattern of the mask plate used when making the metal bridge shown in Fig. 22 at the intersection of the first axis trace and the second axis trace;

Fig. 24 is a schematic structural view at the intersection of the first axis trace and the second axis trace when making an insulating block in the third embodiment of the processing method of the capacitive touch screen according to the present invention;

Fig. 25 is the pattern at the intersection of the first axis trace and the second axis trace of the mask plate used when making the insulating block shown in Fig. 24;

Fig. 26 is a schematic structural view at the intersection of the first axis track and the second axis track when the ITO layer is made in the third embodiment of the processing method of the capacitive touch screen according to the present invention;

Fig. 27 is the pattern at the intersection of the first axis trace and the second axis trace of the mask plate used when making the ITO layer as shown in Fig. 26;

Fig. 28 is a schematic structural view of the capacitive touch screen processed by the third embodiment of the capacitive touch screen processing method of the present invention at the intersection of the first axis trace and the second axis trace;

Fig. 29 is a D-D sectional view of Fig. 28 .

【Detailed ways】

As shown in Figure 4, in the first embodiment of capacitive touch screen of the present invention, comprise substrate 10, ITO (Indium Tin Oxide, indium tin oxide) layer 20, insulation layer 30, circuit layer 40 and protection layer 50. Among them, the substrate 10 is mostly made of tempered glass, etc., the ITO layer 20 is formed by a plurality of first axis traces 21 and second axis traces 22 , the insulating layer 30 is disposed on the ITO layer 20 , and the circuit layer 40 is disposed on the insulating layer 30 . As shown in FIG. 5 , multiple first axis traces 21 are arranged parallel to each other, multiple second axis traces 22 are arranged parallel to each other, and the first axis traces 21 and the second axis traces 22 intersect to form the ITO layer 20 . As shown in Figures 6 and 7, at the intersection, the first axis trace 21 is divided into multiple units P by the second axis trace 22, and two adjacent units P1 and P2 in the same first axis trace 21 pass through the metal bridge 41 For electrical connection, the metal bridge 41 is preferably disposed in the circuit layer 40 and etched on the insulating layer 30 at the same time as the circuit layer 40 . An insulating block 31 is disposed between the metal bridge 41 and the second axis trace 22 . The insulating block 31 is located in the insulating layer 30 and can insulate the second axis trace 22 from the metal bridge 41 . Preferably, the outline of the overlapping part of the metal bridge 41 and the second axis trace 22 is contained by the outline of the insulating block 31, so that the second axis trace 22 and the metal bridge 41 are completely insulated. The insulating block 31 can be set as a rectangle, the length B of the insulating block 31 is greater than the width d of the intersection of the traces 22 of the second axis, and the width A of the insulating block 31 is greater than the width T of the metal bridge.

The first axis trace 21 and the second axis trace 22 are electrically connected to the circuit layer 40 through the electrical connection wire 23 at the tail end. In this way, the first axis trace 21 and the second axis trace 22 are arranged in the same ITO layer 20. Compared with the prior art that needs to arrange the ITO layer 20 on both sides of the substrate and the protective layer 50 on both sides, one part is omitted. Layering the protective layer 50 makes the thickness of the entire film layer thinner, thereby greatly simplifying the structure of the entire touch screen and reducing the manufacturing cost. Moreover, since only one ITO layer 20 makes the entire touch screen more transparent, the light transmittance is improved. This means that the brightness and contrast of the backlight located behind the touch screen can be improved, the required backlight level is lower, and the corresponding power consumption will be greatly reduced-making portable electronic products (such as mobile phones, PDAs, bank POS Terminals, etc.) can obtain longer working hours and save usage costs.

As shown in Figures 18 and 19, in the second embodiment of the capacitive touch screen of the present invention, it also includes a substrate 10, an ITO (Indium Tin Oxide, indium tin oxide) layer 20, an insulating layer 30, and a circuit layer 40. and protective layer 50 . The difference from the first embodiment is that the metal bridge 41 in the circuit layer 40 is located between the insulating layer 30 and the substrate 10 , and the ITO layer 20 is located between the insulating layer 30 and the protective layer 50 .

As shown in FIG. 8, in the first embodiment of the processing method of the capacitive touch screen according to the present invention, the following steps are included: step S10 as shown in FIG. The substrate is generally tempered glass, etc., and the processed side of the substrate is set in the same direction; the processed side of the substrate is cleaned with a cleaning agent, etc., and dried. Then sputter an ITO layer on the side of the substrate according to the specifications of the touch screen; then evenly coat a layer of positive photoresist on the ITO layer; ) covering the ITO layer to expose the photoresist. In this embodiment, the structure of the preset pattern of the photomask plate 24 at the intersection of the first axis trace and the second axis trace is shown in FIG. 11 ;Use the developing solution to develop again, the photoresist of the exposed part is shown off, and the film of the unphotosensitive part is left to form the glue layer pattern of the required ITO part; The removal of ITO forms a plurality of parallel first-axis traces and a plurality of parallel second-axis traces, and the first-axis traces and the second-axis traces intersect and the first-axis traces are separated by the intersecting second-axis traces It is a plurality of units P, the width of the partition area between two adjacent units P1 and P2 is D, and the width of the second axis trace at the intersection is d, as shown in Figure 10; The photoresist film layer is removed to complete the fabrication of the ITO layer.

In step S30 shown in FIG. 8 , an insulating block 31 is made on the processed ITO layer. In this embodiment, the insulating block 31 is processed at the intersection of the first axis trace and the second axis trace by setting the mask plate 34 conforming to the preset pattern to cover the ITO layer, and then sputtering the insulating material. The insulating material may be an insulating material with high light transmittance such as SiO2 or Al2O3. At this time, an insulating film can also be processed at other places where insulation needs to be provided between the ITO layer and the circuit layer to form an insulating layer, that is, the insulating block 31 is located in the insulating layer. As shown in FIG. 13 , in this embodiment, the pattern of the mask plate 34 at the intersection of the first axis trace and the second axis trace is a rectangular hole when the insulating material is sputtered. As shown in Figure 12, after the insulating material is sputtered, an insulating block 31 identical to the preset pattern is formed on the ITO layer, the length of the insulating block 31 is B, and the width of the insulating block 31 is A, wherein the insulating block 31 can be set The length B is greater than the width b of the intersection of the second axis trace, so that the insulating block 31 just covers the intersection of the first axis trace and the second axis trace.

Step S50 as shown in FIG. 8 , fabricate the metal bridge 41 at the intersection of the traces of the first axis and the traces of the second line 22 . In this embodiment, the metal bridge 41 is processed at the intersection of the first axis trace and the second axis trace by setting a mask plate 44 conforming to a predetermined pattern to cover the substrate, and then performing metal sputtering. The metal bridge 41 electrically connects two adjacent units P1 and P2 in the same first axis trace, and the metal bridge 41 and the second axis trace are insulated by the insulating block 31 . At this time, other electrical connections in the circuit layer can also be processed, such as the electrical connection wire 23 between the tail ends of the first axis trace and the second axis trace and the control IC. As shown in FIG. 14 , in this embodiment, the pattern of the mask plate 44 at the intersection of the first axis trace and the second axis trace during metal sputtering is a rectangular hole. As shown in FIG. 13 , after the metal sputtering is completed, a metal bridge 41 conforming to a preset pattern is formed, the length of the metal bridge 41 is S, and the width is T. The length S of the metal bridge 41 is set to be greater than the width D of the partition area between two adjacent units P1 and P2 on the first axis trace, thereby electrically connecting the two adjacent units P1 and P2; the width T of the metal bridge 41 is set to be less than The width A of the insulating block 31 is such that the metal bridge 41 is not electrically connected to the second axis trace, so that the metal bridge 41 and the second axis trace are insulated.

In step S70 shown in FIG. 8 , a protective layer is coated on the film layer of the substrate to complete the processing of the entire capacitive touch screen. The structure of the capacitive touch screen formed by this processing method is shown in FIGS. The width d here; and the width of the insulating block 31 is A, and the length is B, wherein A>T, B>d, so that the contour of the overlapping portion is contained by the contour of the insulating block 31, thereby realizing the second axis track and the metal bridge Reliable insulation between 41.

FIG. 9 shows the second embodiment of the processing method of the capacitive touch screen of the present invention, which is different from the first embodiment in that the method of processing the insulating block 31 and the metal bridge 41 is different. Step S30' as shown in Figure 9, when making the insulating block 31 at the intersection of the first axis trace and the second axis trace, a photosensitive insulating material can be coated on the prepared ITO layer, and the photosensitive insulating material has electrical insulation. And it can be photosensitive and developed and has high light transmittance, such as photosensitive OC (OC, Over Coat, acrylic resin) and other materials, which have good insulation performance and light transmittance >98%, and are photosensitive negative adhesives; The photomask plate with the preset pattern is covered on the surface, and the part that needs to be provided with the insulating block 31 is exposed, and then developed; at this time, the adhesive layer of the unexposed part is removed, and the insulating block 31 of the exposed part is left to complete the insulation. Similarly, insulation can be provided in other places as required, such as the overlapping part between the ITO layer and the circuit layer.

Step 50' as shown in Figure 9, when making the metal bridge 41 of the first axis trace, a layer of metal can be sputtered on the prepared ITO layer, and then evenly coated with a layer of photoresist on the metal layer, Covering the ITO layer with a mask plate with a preset pattern to expose the photoresist, and then developing, etching, and stripping to form a circuit layer. At this time, the metal bridge 41 located at the intersection of the first axis track and the second axis track is produced.

In the above embodiments of the processing method of the capacitive touch screen, the ITO layer is fabricated first, and then the insulating block 31 is fabricated, and then the metal bridge 41 is fabricated. Alternatively, the metal bridge 41 may be fabricated first, followed by the insulating block 31, and then the ITO layer. As shown in FIG. 20, in the third embodiment of the processing method of the capacitive touch screen according to the present invention, the following steps are included: step S20 shown in FIG. The machined sides were cleaned and vacuum dried. The metal bridge 41 is processed by setting a mask conforming to a preset pattern to cover the substrate, and then performing metal sputtering. At this time, other electrical connection lines (ie, edge traces) in the circuit layer can also be processed, such as the electrical connection lines 23 between the tail ends of the first axis trace and the second axis trace and the control IC. As shown in FIG. 23 , in this embodiment, the pattern of the mask plate at the intersection of the first axis trace and the second axis trace during metal sputtering is a rectangular hole. As shown in FIG. 22 , after the metal sputtering is completed, a metal bridge 41 conforming to a preset pattern is formed.

In step S40 shown in FIG. 20 , the insulating block 31 is fabricated on the substrate on which the metal bridge 41 has been processed. In this embodiment, the insulating block 31 is processed at the metal bridge 41 by setting a mask plate conforming to the preset pattern to cover the substrate, and then sputtering the insulating material. The insulating material can be SiO2 or Al2O3, etc. rate insulating material. At this time, an insulating film can also be processed at other places where insulation needs to be provided between the ITO layer and the circuit layer to form an insulating layer, that is, the insulating block 31 is located in the insulating layer. As shown in FIG. 25 , in this embodiment, the pattern of the mask plate at the metal bridge 41 is a rectangular hole when the insulating material is sputtered. As shown in FIG. 24 , after the insulating material is sputtered, an insulating block 31 with the same preset pattern is formed on the ITO layer.

In step S60 as shown in Figure 20, sputter an ITO layer on the substrate processing side; uniformly coat a layer of positive photoresist on the ITO layer; use a mask plate with a preset pattern to cover the ITO layer The photoresist is exposed. In this embodiment, the structure of the preset pattern of the mask plate at the metal bridge 41 is shown in FIG. The ITO protected by the photoresist is removed, and then the glue on the protected ITO is peeled off with a stripping solution to form a plurality of parallel first axis traces and a plurality of parallel second axis traces, and the first axis traces Intersect with the second axis trace and the first axis trace is separated into a plurality of units P by the intersecting second axis trace, as shown in FIG. 26 . The two adjacent units P1 and P2 are electrically connected through the prepared metal bridge 41 , and the metal bridge 41 and the second axis trace are insulated from each other through the insulating block 31 to complete the fabrication of the ITO layer.

In step S80 shown in FIG. 20 , a protective layer is coated on the film layer of the substrate to complete the processing of the entire capacitive touch screen. The structure of the capacitive touch screen formed by this processing method is shown in Figures 28 and 29, wherein the metal bridge 41 is located on the substrate and electrically connected with the first axis trace in the ITO layer, and the metal bridge 41 and the second axis trace The width of the overlapping portion is the width T of the metal bridge 41, and the length is the width d of the trace of the second axis here; while the width of the insulating block 31 is A, and the length is B, wherein A>T, B>d, so that the overlapping portion The contour of is contained by the contour of the insulating block 31, so that a reliable insulation between the second axis trace and the metal bridge 41 is achieved.

FIG. 21 shows the fourth embodiment of the processing method of the capacitive touch screen according to the present invention. The difference from the third embodiment is that the method of processing the insulating block 31 and the metal bridge 41 is different. Step S40' as shown in Figure 21, when making the insulating block 31 at the intersection of the first axis trace and the second axis trace, it is also possible to coat the photosensitive insulating material (such as photosensitive OC material, etc.) as in the second embodiment On the substrate on which the metal bridge 41 has been prepared, the exposed part is retained through exposure and development to form an insulating block 31 to complete the fabrication of the insulating layer. Similarly, insulation can be provided in other places as required, such as the overlapping part between the ITO layer and the circuit layer.

Step 60' as shown in Figure 21, when making the metal bridge 41, the method adopted in the second embodiment can also be adopted: a layer of metal is sputtered on the substrate, and then a layer of positive polarity is uniformly coated on the metal layer. The photoresist is exposed, developed, etched, and stripped to form the metal bridge 41 .

For the convenience of processing, usually multiple capacitive touch screens are processed on one substrate, and in specific processing, multiple substrates can be fabricated simultaneously. In the above embodiment of the processing method of the capacitive touch screen in the present invention, only one capacitive touch screen is processed on one substrate as an example for illustration, and the processing method is not limited thereto. In the process of processing multiple touch screens on multiple substrates, the processing method of the capacitive touch screen disclosed in the present invention can also be implemented.

The above-mentioned embodiments only express several implementation modes of the present invention, and the description thereof is relatively specific and detailed, but should not be construed as limiting the patent scope of the present invention. It should be pointed out that those skilled in the art can make several modifications and improvements without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent for the present invention should be based on the appended claims.

Claims (10)

1. A capacitive touch screen, comprising a substrate, characterized in that it also includes an ITO layer, an insulating layer, a circuit layer and a protective layer arranged on the same side of the substrate, and the ITO layer is composed of a plurality of first axes parallel to each other trace and a plurality of second axis traces parallel to each other, the first axis trace and the second axis trace are arranged perpendicular to each other; each of the first axis traces is separated into multiple Two adjacent units in the same first axis trace are electrically connected through a metal bridge, and an insulating block is provided between the metal bridge and the second axis trace to insulate the two. 2. The capacitive touch screen according to claim 1, wherein the metal bridge is located in the circuit layer. 3. The capacitive touch screen according to claim 1, wherein the insulating block is located in the insulating layer. 4 . The capacitive touch screen according to claim 1 , characterized in that, the outline of the overlapping portion of the metal bridge and the trace of the second axis is contained by the outline of the insulating block. 5. A method for processing a capacitive touch screen according to claim 1, comprising the following steps: S10, preparing the substrate, sputtering an ITO layer on the processed side of the substrate, and processing the second axis trace and being separated by the second axis trace through the processes of sizing, developing, exposing, etching and stripping according to the preset pattern. first axis traces of multiple units; S30, processing an insulating block with a preset pattern on the second axis trace at the intersection of the first axis trace and the second axis trace; S50. Process a circuit layer according to a preset pattern, and process a metal bridge between two adjacent units in the same first axis trace; S70, coating a protective layer. 6. The processing method of the capacitive touch screen according to claim 5, characterized in that, in the step S30, the ITO layer is sputtered by covering the ITO layer with a mask plate with a preset pattern, so that the insulating material The intersection of the first axis trace and the second axis trace forms the insulating block. 7. The processing method of the capacitive touch screen according to claim 5, characterized in that, in the step S30, a photosensitive insulating material is first coated on the ITO layer, and then exposed through a picture-taking mask provided with a preset pattern 1. Forming the insulating block after developing. 8. The processing method of the capacitive touch screen according to claim 5, characterized in that, the step S50 comprises sputtering the circuit layer first, and then sizing, exposing, developing, etching and stripping according to the preset pattern The process of processing the metal bridge. 9 . The processing method of the capacitive touch screen according to claim 5 , wherein in the step S50 , the metal bridge is formed by covering the substrate with a mask plate with a preset pattern and performing metal sputtering. 10. A method for processing a capacitive touch screen according to claim 1, comprising the following steps: S20. Prepare the substrate, process a circuit layer on the processed side of the substrate according to a preset pattern, and pre-process a metal bridge between two adjacent units in the same first axis trace; S40, processing an insulating block with a preset pattern on the metal bridge at the intersection of the first axis trace and the second axis trace; S60, sputtering the ITO layer, and processing the second axis traces and the first axis traces separated into multiple units by the second axis traces through the processes of sizing, exposure, development, etching and stripping according to the preset pattern; Adjacent units of the first axis trace are electrically connected through pre-processed metal bridges; S80, coating a protective layer.

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