CN101435100B - Fluid zone control device and method of operation thereof - Google Patents

Abstract

The present invention provides a fluid area control device and an operation method thereof. The fluid area control device includes at least one substrate supporting base, at least one process fluid supply pipeline, at least one process fluid replenishment pipeline, at least one control fluid supply pipeline and at least one control fluid replenishment pipeline. The process fluid supply pipeline provides at least one process fluid so that the process fluid contacts the crystal surface of the chip. The control fluid supply pipeline continuously provides at least one control fluid. The control fluid is insoluble in the process fluid and will flow through the crystal edge of the chip, so that the process fluid is confined to a specific space.

Description

Fluid zone control device and method of operation thereof

technical field

The present invention relates to a fluid area control device and an operating method thereof, in particular to a fluid area control device and an operating method applicable to a plating process, a cleaning process or a polishing process. the

Background technique

Currently, techniques for forming the metal material layer include physical vapor deposition, chemical vapor deposition, electroless plating, and electroplating. Among them, the electrochemical plating (ECP) technology has been widely used in the industry due to its advantages of low cost and high yield. In the electroplating process, the quality of the coating film will be affected by factors such as the composition of the plating solution, temperature, current density, and the cleanliness of the surface of the plated object. the

Please refer to FIG. 1 to FIG. 3 . FIG. 1 to FIG. 3 are process schematic diagrams of known electrochemical plating processes. As shown in FIG. 1 , firstly, a wafer 10 and an electroplating device 20 are provided. The electroplating device 20 includes an electroplating tank 12 , an electroplating fluid 22 , an anode system (anode system) 14 , a cathode electrode (cathode electrode) 16 and a fixing component (fixing component) 18 . The electroplating tank 12 is used for containing an electroplating fluid 22 , and the main component of the electroplating fluid 22 is a solution containing metal ions. The anode system 14 includes an anode chamber 30 , an anode electrode 24 , a filter membrane 26 , a diffuser membrane 28 and an electroplating fluid supply line 32 . the

The wafer 10 is placed between the cathode electrode 16 and the fixing component 18 , so that the wafer 10 is clamped by the cathode electrode 16 and the fixing component 18 . Then, as shown in Figure 2, the wafer 10 is slightly tilted so that there is an angle between the wafer 10 and the liquid level of the electroplating fluid 22, and then the wafer 10 is slowly immersed in the electroplating fluid 22, so that the surface of the wafer 10 is relatively Not easy to contain air bubbles. Thereafter, as shown in Figure 3, the cathode electrode 16 is electrically connected to the wafer 10 to be electroplated. In order to improve the uniformity of the coating thickness, generally the cathode electrode 16 will rotate during electroplating to ensure that the wafer 10 can continue to contact fresh Plating fluid. When the electroplating device 20 is applied with an external voltage or electric current, the circuit formed by the anode system 14, the electroplating fluid 22, and the cathode electrode 16 will be turned on, and a reduction reaction will be carried out around the cathode electrode 16, and the Metallic material is plated on the wafer 10 . the

It is known that the electrochemical plating process will not only plate the metal material on the crystal face of the wafer 10 , but also plate the metal material on the crystal edge of the wafer 10 at the same time. However, the metal material attached to the bezel surface is not actually required for the product. During subsequent semiconductor processes, the metal material on the crystal edge surface often peels off due to thermal stress or other factors, causing the metal material to break and produce chips or particles. Especially when a whole batch of semiconductor chips is placed in a chemical vapor deposition (chemical vapor deposition, CVD) device to carry out the CVD process, if the wafer 10 at the upper position is peeled off, it will seriously pollute the wafer 10 at the lower position. surface of the wafer 10, causing defects. In addition, when the wafer 10 is moved according to the requirements of the process, the debris of the metal material will often fall onto the surface of the wafer 10 to contaminate the product, thereby affecting the performance of the product. the

In order to avoid the above defects, it is known that after the electrochemical plating process, an additional cleaning process, cleaning process and drying process are required to remove the metal material attached to the surface of the crystal edge. This will not only increase the process time and process cost, but also increase the complexity of the process, which may lead to a decrease in product yield. For the electroplating fluid 22, because the known anode system 14, the wafer 10 and the cathode electrode 16 need to be completely immersed in the electroplating fluid 22, and the wafer 10 must be immersed in the liquid surface of the electroplating fluid 22 obliquely, so known electroplating The electroless plating process requires a large plating tank 12 and a large amount of plating fluid 22 . When the electrochemical plating process has been performed for a period of time, the process needs to be suspended to pour out the old electroplating fluid 22 and inject new electroplating fluid 22 . As a result, the replacement of the electroplating fluid 22 will take a long time, so that the yield is reduced. the

On the other hand, in order to carry out the known electrochemical plating process, the single wafer 10 must first be placed between the cathode electrode 16 and the fixed assembly 18 by the robot arm, and then placed obliquely into the electroplating fluid 22, and then the electroplating device 20 is turned on. electroplating reaction, and then remove the electroplating tank 12, and perform subsequent processes such as cleaning process and drying process. It can be seen that due to the limitation of the operation of the electroplating device 20 , the known electrochemical plating process cannot process a large number of wafers 10 in batches, which seriously affects the yield of products. Furthermore, it is difficult for the known electroplating device 20 to perform in-situ measurement on the wafer 10, thus not only making the known technology unable to accurately and quickly control the electrochemical plating process, but also the steps of measurement will cost extra time. time. the

Contents of the invention

Therefore, one of the main objectives of the present invention is to provide a fluid area control device and its operating method to solve the problems caused by the known technology. the

According to an embodiment of the present invention, the present invention provides a fluid area control device for electroplating, comprising at least one substrate holder, at least one cathode electrode, at least one anode system, at least one control fluid supply Confining fluid supplying tube, at least one control fluid recovering tube, at least one process fluid supplying tube, and at least one process fluid recovering tube. The substrate carrying base is used for carrying at least one semiconductor substrate. The cathode electrode is disposed on the surface of the substrate carrying base for electrical connection to the semiconductor substrate. The anode system is located above the substrate-carrying base, substantially corresponding to the semiconductor substrate, and separated from the substrate-carrying base by a reaction height. At least one area to be treated and at least one area not to be treated are defined between the anode system and the cathode electrode. Both the control fluid supply line and the control fluid return line are arranged corresponding to the non-treatment area, and are respectively used for supplying and recovering at least one control fluid. Both the process fluid supply pipeline and the process fluid return pipeline are arranged corresponding to the area to be treated, and are respectively used for supplying and recovering at least one electroplating fluid. the

According to another preferred embodiment of the present invention, the present invention further provides a method for operating a fluid area control device. Firstly, at least one fluid area control device is provided. The fluid area control device includes at least one substrate bearing base, at least one control fluid supply pipeline and at least one control fluid return pipeline, and at least one area to be treated is defined on the substrate bearing base. with at least one non-treated area. Afterwards, at least one semiconductor substrate is provided, and the semiconductor substrate is fixed on the substrate carrying base. Then, the control fluid supply line and the control fluid return line are opened, so that at least one control fluid continuously flows out of the control fluid supply line and flows into the control fluid return line, wherein the control fluid flows through the non-treatment area of the substrate supporting base. At least one process fluid is then provided, the process fluid contacts the area of the substrate carrying pedestal to be treated, and the process fluid is insoluble in the control fluid. the

In order to make the above-mentioned purpose, features, and advantages of the present invention more comprehensible, the preferred implementation modes are exemplified below and described in detail in conjunction with the accompanying drawings. However, the following preferred embodiments and drawings are only for reference and illustration, and are not intended to limit the present invention. the

Description of drawings

1 to 3 are process schematic diagrams of known electrochemical plating processes. the

FIG. 4 is a schematic cross-sectional view of the fluid area control device according to the first preferred embodiment of the present invention. the

FIG. 5 is a schematic cross-sectional view of the anode system shown in FIG. 4 . the

FIG. 6 is a schematic perspective view of a substrate carrying base according to a preferred embodiment of the present invention. the

FIG. 7 is a schematic top view of another preferred embodiment of the substrate carrying base of the present invention. the

FIG. 8 is a schematic perspective view of a cathode electrode according to a preferred embodiment of the present invention. the

FIG. 9 is a schematic side view of a cathode electrode according to another preferred embodiment of the present invention. the

10 to 12 are schematic cross-sectional views of the first, second, third and fourth pipelines of the present invention. the

FIG. 13 is a schematic cross-sectional view of a fluid area control device according to another preferred embodiment of the present invention. the

14 to 18 are schematic diagrams illustrating the operation method of the fluid area control device shown in FIG. 13 . the

FIG. 19 is a schematic cross-sectional view of a fluid region control device according to a second preferred embodiment of the present invention. the

FIG. 20 is a schematic cross-sectional view of a fluid area control device according to another preferred embodiment of the present invention. the

21 to 24 are schematic diagrams illustrating the operation method of the fluid area control device shown in FIG. 19 . the

FIG. 25 is a schematic cross-sectional view of a fluid area control device according to a third preferred embodiment of the present invention. the

FIG. 26 is a schematic view of the operation of the fluid area control device of the present invention. the

FIG. 27 is a schematic diagram of the process operation equipment of the fourth preferred embodiment of the present invention. the

Fig. 28 is a schematic perspective view of the delivery device shown in Fig. 27 . the

FIG. 29 is a schematic cross-sectional view of the middle layer of the process operation equipment shown in FIG. 27 . the

FIG. 30 is a schematic diagram of the process operation equipment of the fifth preferred embodiment of the present invention. the

FIG. 31 is a schematic diagram of the process operation equipment of the sixth preferred embodiment of the present invention. the

FIG. 32 is a schematic diagram of the process operation equipment of the seventh preferred embodiment of the present invention. the

FIG. 33 is a schematic diagram of the process operation equipment of the eighth preferred embodiment of the present invention. the

Description of main component symbols

10 Wafers 12 Electroplating tanks

14 Anode system 16 Cathode electrode

18 Fixed component 20 Electroplating device

22 Electroplating Fluid 24 Anode Electrode

26 Filter Membrane 28 Diffusion Membrane

30 Anode chamber 32 Electroplating fluid supply pipeline

110 Semiconductor substrate 114 Anode system

116 Cathode electrode 118 Anode chamber

120 Fluid Zone Control System 124 Anode Electrode

126 Filter Membrane 128 Diffusion Membrane

130 Substrate bearing base 130a Conveyor belt

130b Ring Structure 132 First Pipeline

134 Second pipeline 136 Fifth pipeline

142 The third pipeline 144 The fourth pipeline

146 Sixth pipeline 148 Seventh pipeline

152 side wall 154 control fluid

156 Electroplating Fluid 158 Polishing Slurry

214 Pipeline system 216 Fixed components

220 Fluid Zone Controls 256 Cleaning Fluid

320 Fluid area control device 322 Fluid area control device

324 Automatic process control system 350 Art operation equipment

360 Cylindrical Abutment 362 Cylindrical Bracket

364 Housing 366 Loading/Loading Device

368 Process system 372 Conveying device

420 Fluid area control device 450 Process operation equipment

466 Loading/unloading device 472 Conveying device

478 Seed crystal deposition reaction chamber 482 Barrier layer deposition reaction chamber

484 Drying reaction chamber 486 Pre-deposition reaction chamber

520 Fluid area control device 550 Shangyi operating equipment

572 Conveyor belt 620 Fluid area control device

650 Process operation equipment 672 Conveyor belt

674 Mechanical arm 720 Fluid area control device

714 Polishing System 722 Sensor

724 Polishing pad holder 751 Polishing pad

802 Copper Electrochemical Plating Reaction Chamber 810 Chip Interface

812 Copper seed crystal deposition reaction chamber 816 Loading port

822 Pre-cleaning reaction chamber 830 Single wafer carrying chamber

832 Buffer chamber 840 Pre-cleaning reaction chamber

842 Buffer room 850 Art operation equipment

852 Tantalum/Tantalum Nitride Deposition Reaction Chamber 860 Copper Electrochemical Plating Reaction Chamber

870 Copper Chemical Mechanical Polishing Reaction Chamber 872 Robotic Arm

880 Overlay reaction chamber 890 Copper chemical mechanical polishing reaction chamber

914 system

Detailed ways

Please refer to FIG. 4 and FIG. 5. FIG. 4 shows a schematic cross-sectional view of a fluid area control device 220 for electroplating according to a first preferred embodiment of the present invention, and FIG. 5 shows the anode system 114 shown in FIG. Schematic cross-section, in which the same components or parts are represented by the same symbols. It should be noted that the drawings are for illustration purposes only and are not drawn to original scale. As shown in FIG. 4 , this embodiment provides a fluid area control device 220 for electroplating, including a fluid area control system 120 and an anode system 114 . Wherein, the fluid region control system 120 includes a substrate supporting base 130 , a cathode electrode 116 , at least one first pipeline 132 , at least one second pipeline 134 , at least one third pipeline 142 and at least one fourth pipeline 144 . the

The anode system 114 is located above the substrate-carrying pedestal 130 and substantially corresponds to the semiconductor substrate 110 to be processed. The reaction height H between the anode system 114 and the substrate supporting base 130 can be used as a voltage source for the electroplating reaction on the one hand, and can assist the fluid region control device 220 to control the height occupied by the process fluid on the other hand. In the fluid region control device 220, the anode system 114 can be a rotary system or a fixed system. In other words, relative to the substrate supporting base 130, the anode system 114 can rotate or maintain a fixed position. On the other hand, the substrate carrying base 130 can also choose to rotate or maintain a fixed position. As shown in FIG. 5, the anode system 114 may include an anode electrode 124, and optionally include at least one fifth pipeline 136, a sensor (sensor) 122 or detector (detector, not shown in the figure) . In addition, the anode system 114 may also include elements such as an anode chamber 118 , a filter membrane 126 or a diffusion membrane 128 . the

The substrate carrying base 130 is used for carrying at least one semiconductor substrate 110 . Wherein, the substrate carrying base 130 of the present invention may have a belt type structure or a ring type structure, as shown in FIG. 6 and FIG. 7 . The substrate carrying base 130 in FIG. 6 has at least one conveyor belt 130a, so that many semiconductor substrates 110 to be processed can be transferred into the fluid area control device 220 sequentially by using the substrate carrying base 130 . The substrate carrying base 130 in FIG. 7 has a ring structure 130b for accommodating the semiconductor substrate 110 to be processed. It should be noted that the substrate supporting base 130 can also have a ring structure and a conveyor belt (not shown in the figure) at the same time, the semiconductor substrate 110 is accommodated by the ring structure, and the ring structure and the semiconductor substrate 110 are transported by the conveyor belt . the

The cathode electrode 116 is disposed on the surface of the substrate carrying base 130 and can be electrically connected to the semiconductor substrate 110 . Wherein, the cathode electrode 116 can also be used as a fixing component for fixing the semiconductor substrate 110 on a predetermined position of the substrate carrying base 130 . In view of this, the cathode electrode 116 can have an electrostatic chuck (electrostatic chuck, e-chuck), a vacuum chuck (vacuum chuck), a ring type (ring type) structure or a clamp type (clamp type) structure, as shown in Figure 8 with Figure 9. The cathode electrode 116 of FIG. 8 can fix the semiconductor substrate 110 downward from the top of the semiconductor substrate 110, and the cathode electrode 116 of FIG. The semiconductor substrate 110 is clamped by pouring. On the substrate supporting base 130 , between the anode system 114 and the cathode electrode 116 are defined a region to be treated (not shown in the figure) and a region not to be treated (not shown in the figure). A part of the semiconductor substrate 110 located in the area to be treated is scheduled to be treated by a process, while a part of the semiconductor substrate 110 located in the non-processed area is scheduled not to be treated by a process. the

The first pipeline 132, the second pipeline 134, the third pipeline 142 and the fourth pipeline 144 are located around the anode system 114, and are used to provide or recover chemical substances, additives, deionized water, gas, Control fluids and other substances. Relative to the semiconductor substrate 110 to be processed, the third pipeline 142 and the fourth pipeline 144 are located outside the first pipeline 132 and the second pipeline 134 . The first pipeline 132 , the second pipeline 134 , the third pipeline 142 and the fourth pipeline 144 can have any pipeline cross-sectional shape, such as circular, semicircular, arc, elliptical, rectangular or polygonal. For example, the first pipeline 132 and the second pipeline 134 shown in FIG. 10 are circular pipes, while the third pipeline 142 and the fourth pipeline 144 have arc-shaped cross-sections. the

In addition, the fluid region control device of the present invention may also include multiple first pipelines 132, multiple second pipelines 134, multiple third pipelines 142, or multiple fourth pipelines 144, and the multiple pipelines are arranged into The desired shape, such as circle, semicircle, arc, ellipse, straight line or rectangle, etc. For example, the first pipeline 132, the second pipeline 134, the third pipeline 142 and the fourth pipeline 144 shown in FIG. 11 are all round tubes, and the third pipeline 142 and the fourth pipeline 144 are respectively arranged in a circular pattern. Or as shown in FIG. 12, when the fluid area control device 220 has a side wall 152 as an auxiliary, the third pipeline 142 and the fourth pipeline 144 may have a linear cross-section and be arranged parallel to each other. It should be noted that all the pipelines shown in the figure are inclined toward the center of the semiconductor substrate 110 , as shown in FIG. 4 . However, the present invention is not limited thereto. The pipelines of the fluid area control device 220 of the present invention can also be arranged perpendicular to the crystal plane of the semiconductor substrate 110, inclined away from the center direction of the semiconductor substrate 110, or even parallel to the semiconductor substrate 110. Crystal faces are set. the

In addition to being able to line the interior of the anode system 114, virtually every portion of the fluid region control device 220 can be lined. As shown in FIG. 13 , the fluid area control system 120 may further include at least one sixth pipeline 146 and at least one seventh pipeline 148 disposed in the substrate supporting base 130 and corresponding to the periphery of the semiconductor substrate 110 . The sixth pipeline 146 and the seventh pipeline 148 can also have various cross-sections as described above, and can also be arranged in any shape by a plurality of sixth pipelines 146 or seventh pipelines 148 . The fluid area control device 220 can use the valve of the pipeline or the fluid pressure to regulate the first pipeline 132, the second pipeline 134, the third pipeline 142, the fourth pipeline 144, the fifth pipeline 136, the sixth pipeline 146 or the seventh pipeline 148, and the fluid area control device 220 can also regulate the type, flow direction, and flow rate of the fluid flowing in each pipeline, and even the setting angle and position of each pipeline. the

On the other hand, in addition to installing sensors 122 or detectors inside the anode system 114, each part of the fluid area control device 220 can actually be equipped with various sensors 122 or detectors, such as A temperature sensor, a flow rate sensor, or a sensor capable of measuring the surface condition of the wafer (such as thickness, flatness, etc.) is installed. For example, the first pipeline 132 may include a sensor 122 , and the second pipeline 134 may also include a sensor 122 . These sensors can measure the process conditions or process fluids in real time during the process, so they can accurately and quickly control the process conditions, and then can automatically feedback and adjust various process parameters or the quality of process fluids in real time . the

In order to illustrate the features of the present invention more clearly, an operation method of the fluid region control device 220 is illustrated below through an example of applying the present invention to an electrochemical plating process. Please refer to FIG. 14 , which is a schematic diagram of an operation method of the fluid area control device 220 for electroplating shown in FIG. 13 , wherein the same components or parts are represented by the same symbols. As shown in FIG. 14 , firstly, the fluid area control device 220 shown in FIG. 13 is provided. Afterwards, at least one semiconductor substrate 110 is provided, and the semiconductor substrate 110 is fixed on the substrate supporting base 130 by using the cathode electrode 116 or other fixing components. The semiconductor substrate 110 may be a wafer, a silicon substrate or a silicon-on-insulator (SOI) substrate. In this embodiment, the semiconductor substrate 110 is a wafer. Since the crystal face of the wafer in this embodiment needs to be electroplated to form a metal material layer, and the crystal edge of the wafer does not need to form a metal material layer, the area 102 to be treated in the fluid area control device 220 corresponds to the crystal face of the wafer, not The processing region 104 is corresponding to the crystal edge of the wafer, where the crystal face of the wafer can be placed upwards to face the anode system 114 . the

Then, the third pipeline 142 and the fourth pipeline 144 are opened, so that a control fluid 154 continuously flows out from the fourth pipeline 144 and is recovered through the third pipeline 142 , while the sixth pipeline 146 and the seventh pipeline 148 are closed. Wherein, the control fluid 154 is used to maintain the shape and position of process fluids such as chemical substances or cleaning fluids in the area to be treated, so that the chemical substances will not touch the parts of the semiconductor substrate 110 that do not need to be processed, such as the control fluid 154 Inert gas such as nitrogen may be used. Both the fourth pipeline 144 and the third pipeline 142 are disposed around the semiconductor substrate 110 for supplying and recovering the control fluid 154 respectively. At this moment, the flow path of the control fluid 154 from the fourth pipeline 144 to the third pipeline 142 may form a flow line P. As shown in FIG. Through the configuration of the third pipeline 142 and the fourth pipeline 144 , the fluid area control device 220 allows the domain control fluid 154 to flow through the non-treatment area of the fluid area control device 220 . the

Then the first pipeline 132 and the second pipeline 134 are opened, so that an electroplating fluid 156 continuously flows out of the first pipeline 132 and is recovered through the second pipeline 134 . The electroplating fluid 156 here is the process fluid of the electrochemical plating process. The first pipeline 132 and the second pipeline 134 are respectively used for supplying and recovering the electroplating fluid 156 , and are disposed between the semiconductor substrate 110 and the flow line P of the control fluid 154 . In order to promote the continuous flow of the electroplating fluid 156 and the control fluid 154 , a pump can be installed inside or outside the fluid area control device 220 as a power source, but it is not limited thereto. In other embodiments of the present invention, the process fluid may not even be continuously provided and continuously recovered, but a certain amount of process fluid is first provided for reaction, and then it is considered whether to recover the process fluid or provide a new one according to the situation. process fluid. the

Since the electroplating fluid 156 and the control fluid 154 are not easily miscible with each other, the control fluid 154 can control the flow range of the electroplating fluid 156, so that the electroplating fluid 156 will not touch the part that does not need to be processed on the semiconductor substrate 110, but only touches The part on the semiconductor substrate 110 that needs to be processed. In this way, the fluid area control device 220 can control the space occupied by the electroplating fluid 156 by controlling the flow rate of the fluid 154 , the flow rate of the electroplating fluid 156 , the positions of the pipelines and the angles of the pipelines and so on. the

The anode electrode 124 and the cathode electrode 116 can be electrically connected to different potentials before or after the electroplating fluid 156 flows out. In this way, the circuit formed by the anode electrode 124, the electroplating fluid 156, and the cathode electrode 116 will be conducted. A reduction reaction is performed around the cathode electrode 116 , and the metal material is plated on the crystal surface of the semiconductor substrate 110 . the

Under the aforementioned conditions, the control fluid 154 and the electroplating fluid 156 do not react with each other, and the control fluid 154 utilizes its immiscibility with the electroplating fluid 156 to restrict the position and shape of the electroplating fluid 156 . In the present invention, both the process fluid and the control fluid can be in liquid state, gas state, vapor state or gel state. For example, the plating fluid 156 flows in a liquid state, while the control fluid 154 flows in a gaseous state. Alternatively, the plating fluid 156 and the control fluid 154 may be in a liquid state at the same time. Furthermore, the control fluid 154 may include a supercritical fluid, such as carbon dioxide. In other embodiments of the present invention, the control fluid 154 may also include various other substances to assist the operation of the process or assist in controlling the flow of the electroplating fluid 156 . For example, the control fluid 154 may include an ionized gas, a hot gas, or a cold gas to change the process temperature or the temperature and characteristics of the plating fluid 156 . In this way, on the one hand, the control fluid 154 can maintain the shape and position of the process fluid, on the other hand, it can strengthen the process, and even remove the residue left on the semiconductor substrate 110 . the

One of the main features of the present invention is to replace the known container with a control fluid to control the position of the process fluid and the space occupied by the process fluid. In order to achieve the above purpose, the control fluid and the process fluid are immiscible with each other, then the control fluid can limit the space occupied by the process fluid through the flow line P that flows by itself, and use the magnetic force between the control fluid and the process fluid to control The space occupied by the process fluid, or the space occupied by the process fluid is controlled by the electric power between the control fluid and the process fluid. In view of this, the control fluid 154 may include magnetic substances, electrical substances, magneto-rheological fluid (magneto-rheological fluid, MRF), electro-rheological fluid (electro-rheological fluid, ERF), and even solid particles . Thus, the fluid area control device 220 can use magnetic force or electric force to control the characteristics of the control fluid 154 or the electroplating fluid 156 , thereby controlling the flow of the electroplating fluid 156 . the

The foregoing operation method is only one implementation of the present invention, and the actual flow modes of the control fluid 154 and the electroplating fluid 156 can be adjusted according to actual process requirements. In other words, according to different process requirements, the control fluid 154 or the electroplating fluid 156 of the present invention can flow out from any pipeline and be recovered in a proper pipeline. Please refer to FIG. 15 to FIG. 18 , which depict schematic diagrams of other operating methods of the fluid area control device 220 for electroplating shown in FIG. 13 , wherein the same elements or parts are still represented by the same symbols. The operating methods shown in FIGS. 15 to 18 can also be applied to an electrochemical plating process. The main difference between these operating methods and the aforementioned operating methods is that the flow lines of the control fluid 154 and the electroplating fluid 156 are changed. the

As shown in FIG. 15 , control fluid 154 also exits fourth line 144 and is recovered through third line 142 . But the electroplating fluid 156 flows out from the second pipeline 134 instead and is recovered through the first pipeline 132 . As shown in FIG. 16 , the flow line P of the control fluid 154 is also unchanged, but the electroplating fluid 156 preferably flows out from the fifth pipeline 136 and is recovered through the first pipeline 132 together with the second pipeline 134 . As shown in FIG. 17 , the plating fluid 156 exits the first line 132 and is recovered through the second line 134 . And the control fluid 154 flows out from the sixth line 146 and is recovered through the third line 142 . Or as shown in FIG. 18 , the electroplating fluid 156 flows out from the first pipeline 132 and is recovered through the second pipeline 134 . The control fluid 154 flows out from the sixth pipeline 146 and the seventh pipeline 148 together, and is recovered through the third pipeline 142 and the fourth pipeline 144 . the

It should be noted that the aforementioned fluid area control device 220, fluid flow line P and process fluid flow line can all be applied to a solvent cleaning (solvent cleaning) process, and the fluid area control device 220 of the present invention can be applied to In any process that requires control of the operating fluid, such as a drying process, a wet etching process, an electroless plating (electroless plating) process, a chemical mechanical polishing (CMP) process, or an electrochemical mechanical polishing process etc. When the fluid area control device 220 is applied to a cleaning process, the anode electrode 124 and the cathode electrode 116 need not be electrically connected to different potentials, and the plating fluid 156 can be replaced with a cleaning fluid, such as a deionized water (DI water) or a supercritical fluid. Therefore, after a semiconductor substrate 110 undergoes an electrochemical plating process in the fluid region control device 220, the voltage applied to the anode electrode and the cathode electrode can be turned off, and the process fluid is replaced, and immediately undergoes a cleaning process or a drying process in the same device. craft. the

It can be seen that, when applied to the cleaning process, the fluid area control device may not even need two components of the anode electrode and the cathode electrode. Please refer to FIG. 19 , which is a schematic cross-sectional view of a fluid area control device 320 for cleaning according to a second preferred embodiment of the present invention, wherein the same components or parts are represented by the same symbols. As shown in FIG. 19 , this embodiment provides a fluid area control device 320 for cleaning. The main difference between the fluid area control device 320 and the fluid area control device 220 is that the fluid area control device 320 for cleaning may not require the cathode electrode 116 and the anode system 114 . Therefore, the fluid area control device 220 can use a fixing component 216 to fix the semiconductor substrate 110, and use a pipeline system (tube system) 214 to help control the reaction height H of the process, wherein the fixing component 216 can be an electrostatic chuck or a vacuum chuck or clamp structure. The pipeline system 214 is located above the substrate supporting base 130 , substantially corresponding to the semiconductor substrate 110 , and is separated from the substrate supporting base 130 by a reaction height H. A to-be-processed area (not shown in the figure) and a non-processed area (not shown in the figure) are defined on the substrate carrying base 130 . A part of the semiconductor substrate 110 located in the area to be treated is scheduled to be treated by a process, while a part of the semiconductor substrate 110 located in the non-processed area is scheduled not to be treated by a process. the

In addition, in another embodiment of the present invention, the fluid region control system 120 itself can be used for cleaning process, etching process or drying process, and the gravity of the process fluid itself and the control fluid are used to maintain the position of the process fluid, as shown in the figure 20 shown. the

When the fluid region control device 320 is applied to an etching process or a cleaning process, the control fluid and the process fluid may also have other flow modes. Please refer to FIG. 21 to FIG. 24, which are schematic diagrams of other operating methods of the fluid area control device 320 for cleaning shown in FIG. 19, wherein the same elements or parts are still represented by the same symbols, and here The semiconductor substrate 110 can also be a wafer. As shown in FIG. 21 , when the crystal plane of the semiconductor substrate 110 is to be cleaned, the first pipeline 132 and the second pipeline 134 together provide the cleaning fluid 256 required for the process, and the fifth pipeline 136 recovers the cleaning fluid 256 . The control fluid 154 flows out from the sixth pipeline 146 and the seventh pipeline 148 together, and is recovered through the third pipeline 142 and the fourth pipeline 144 from bottom to top. Alternatively, as shown in FIG. 22 , the control fluid 154 flows out from the third pipeline 142 and the fourth pipeline 144 together, and is recovered through the sixth pipeline 146 and the seventh pipeline 148 from top to bottom. the

When the crystal edge of the semiconductor substrate 110 is to be cleaned, the area to be treated by the fluid area control device 320 may correspond to the crystal edge of the semiconductor substrate 110 , and the untreated area may correspond to the crystal plane of the semiconductor substrate 110 . As shown in Figure 23, the first pipeline 132 and the second pipeline 134 provide the control fluid 154 required for the process together, and the control fluid 154 is recovered by the fifth pipeline 136, so as to protect the crystal plane of the wafer located in the non-processing area from cleaning. Fluid 256 contacts. The cleaning fluid 256 flows out from the sixth pipeline 146 and is recovered through the third pipeline 142 . Furthermore, as shown in FIG. 24, when the crystal back of the semiconductor substrate 110 is to be cleaned, the fixing assembly 216 can lift the semiconductor substrate 110 slightly first, the sixth pipeline 146 provides the cleaning fluid 256, and the third pipeline 142 recovers the cleaning fluid. 256. The control fluid 154 flows out from the first pipeline 132 and the second pipeline 134 and is recovered through the fifth pipeline 136 . the

The fluid area control device 220 for electroplating or the fluid area control device 320 for cleaning of the present invention can also be applied to a chemical mechanical polishing process, wherein the process can be divided into a traditional chemical mechanical polishing process and an electrochemical polishing process. Please refer to FIG. 25 , which shows a schematic cross-sectional view of a fluid area control device 720 for polishing according to a third preferred embodiment of the present invention. As shown in Figure 25, the fluid area control device 720 can include a polishing system (polishing system) 714 and a fluid area control system 120, wherein the polishing system 714 also includes a polishing pad (polishing pad) 751, a polishing pad fixing seat ( pad holder) 724, and polishing slurry (slurry) 158. the

When applied to an electrochemical polishing process, the fixing component 216 can be used as an anode electrode, and the polishing pad fixing seat 724 can be used as a cathode electrode to accelerate polishing efficiency by energizing. In addition, when applied to a traditional chemical mechanical polishing process, the fluid area control device 720 can turn off the voltage applied to the anode electrode and the cathode electrode, so that the traditional chemical mechanical polishing process can be performed in the same device. In other words, through the replacement of some components, switching, and replacement of process fluids, the semiconductor substrate 110 can quickly perform various processes in a single fluid area control device 720, such as receiving a chemical mechanical polishing process immediately after a process. cleaning process. the

A to-be-processed area (not shown in the figure) and a non-processed area (not shown in the figure) are defined on the substrate carrying base 130 . Part of the semiconductor substrate 110 located in the area to be treated is scheduled to be treated by a chemical mechanical polishing process, while part of the semiconductor substrate 110 located in an untreated area is scheduled not to be treated by a chemical mechanical polishing process. It should be particularly noted that both the aforementioned fluid flow line P and the process fluid flow line can be applied in the chemical mechanical polishing process, and the height and position of the polishing pad 751 can be adjusted according to the requirements of the process. When performing the chemical mechanical polishing process, the polishing pad 751 can press down on the surface of the semiconductor substrate 110 , or the substrate supporting base 130 or the fixing component 216 can also lift the semiconductor substrate 110 to the surface of the polishing pad 751 . the

The polishing system 714 may further include a sensor 722 capable of measuring the flatness of the wafer or the thickness of the material layer, so as to perform a real-time flatness measurement on various parts of the semiconductor substrate 110, and the measurement results can be fed back to the process in real time . In addition, the polishing system 714 may include various types of polishing devices, such as a rotary type polishing device, a linear type polishing device, an orbital type polishing device, or a fixed polishing device. Particle (fixed abrasive web) system. For example, when the polishing system 714 is a fixed polishing particle system, the polishing pad 751 itself can have various types of polishing particles, and the process fluid supplied by the fluid area control device 720 can be a deionized water with polishing particles. The polishing pad 751 combined with deionized water can roll polish the entire semiconductor substrate 110 or a specific area of the semiconductor substrate 110 , such as the convex structure of the material layer on the surface of the semiconductor substrate 110 . In practice, the size of the polishing pad 751 can be larger than the semiconductor substrate 110 , smaller than the semiconductor substrate 110 , or the same size as the semiconductor substrate 110 . the

It can also be deduced from this that when the fluid area control device 320 for cleaning is equipped with at least one polishing pad, the fluid area control device 320 can perform a traditional chemical mechanical polishing process. the

Because the fluid region control device 720 can use the control fluid to control the position of the polishing slurry 158 or deionized water, and control the height and position of the polishing pad 751 to polish the entire semiconductor substrate 110 or a specific region of the semiconductor substrate 110, the fluid region The control device 720 has several advantages as follows. First of all, the fluid area control device 720 can easily adjust the positions of the area to be treated and the non-treated area, and can also easily adjust the relative position of the semiconductor substrate 110, so it is possible to perform polishing on a specific area of the semiconductor substrate 110 without worrying about other areas. Regions of the semiconductor substrate 110 or material layers are worn or damaged by polishing. the

Secondly, after a traditional etching process, a traditional deposition process, or a traditional polishing process, the surface of a single semiconductor substrate 110 or a certain material layer thereon often has a problem of poor uniformity, for example, in After the conventional polishing process, the edge of the semiconductor substrate 110 will be thinner and the center will be thicker. Since the fluid area control device 720 can easily adjust the positions of the area to be treated and the non-treated area, and can also measure the flatness of the semiconductor substrate 110 or the thickness of the material layer in real time, it can automatically polish the semiconductor substrate 110 with good uniformity or material layers. the

Furthermore, since the fluid area control device 720 uses the control fluid to control the position to be polished, the fluid area control device 720 can have a polishing pad 751 of any size, unlike the polishing pad size of a traditional polishing machine table, which usually must be larger than Dimensions of the semiconductor substrate 110 . In addition, because the fluid area control device 720 can apply the polishing slurry 158 or deionized water to the area to be treated, the polishing slurry 158 can be prevented from contacting other easily polluted areas on the semiconductor substrate 110, and the polishing slurry 158 can also be saved. Or the amount of deionized water used to avoid unnecessary cost loss. the

In addition, it should be noted that the fluid area control device 220 for electroplating, the fluid area control device 320 for cleaning and the fluid area control device 720 for polishing of the present invention can all process specific areas of the wafer. Please refer to FIG. 26 . FIG. 26 is a schematic view of the operation of the fluid area control device of the present invention. As shown in FIG. 26 , the fluid area control device may include a fluid area control system 120 and a system 914 , wherein the system 914 may be the anode system 114 , the pipeline system 214 or the polishing system 714 . The fluid region control device can perform regional electroplating process, cleaning process or polishing process on the semiconductor substrate 110 . The area to be treated here need not be limited to crystal planes and crystal edges, and can correspond to any position on the semiconductor substrate 110, for example, to an active region on the wafer, while the rest of the semiconductor substrate 110 can correspond to A non-processing area, eg, a non-processing area may correspond to a certain peripheral area on the wafer. In other embodiments, the area to be processed may correspond to the crystal plane, crystal back, crystal edge, or any local area that needs to be processed, while the rest of the wafer may correspond to the non-processed area. the

To sum up, since the present invention uses the control fluid to control the position of the process fluid, it does not require a huge electroplating tank and a large amount of electroplating fluid like the known electrochemical plating process. In addition, both the control fluid and the process fluid of the present invention can be recycled. After the control fluid or process fluid is recovered through the pipeline, it can be directly returned to the fluid area control device through another pipeline for further use. Alternatively, the recovered process fluid and control fluid can also be supplied to the fluid area control device for further use after immediate or non-immediate treatment. In other words, the present invention can add new fluid or process fluid according to the state and composition ratio of the recovered fluid or recovered process fluid for deployment, and can also perform appropriate separation steps on the recovered fluid or recovered process fluid, and then treat the treated fluid The fluid or process fluid is supplied to the fluid area control device. In this way, the present invention can easily and instantly adjust the composition ratio and state of the process fluid, so that the process can be maintained in a good condition, without taking a long time and huge cost to replace the process fluid, and can also reduce the usage of the process fluid . In addition, the present invention can also provide a heating device installed in the fluid control device according to the process requirements, to heat the semiconductor substrate or the process fluid, thereby increasing the reaction temperature required by the process or speeding up the reaction speed. the

On the other hand, the fluid area control device of the present invention can make the process only act on the part of the semiconductor substrate that needs to be processed through the control of the flow rate and the pipeline, and at the same time ensure that the process will not act on the part of the semiconductor substrate that does not need to be processed. Therefore, the electrochemical plating process can be avoided to plate a metal layer on the edge of the wafer, and the edge metal removal step (edge bevel removal step, EBR step) can be omitted, thereby saving process time and process cost, and reducing process complexity. the

Since the present invention can control the position of the process fluid by using the control fluid instead of the known container, it can break through the limitations of traditional devices and develop various process operation equipment. Please refer to Fig. 27 to Fig. 29, what Fig. 27 depicts is the schematic diagram of the process operation equipment 350 of the fourth preferred embodiment of the present invention, Fig. 28 is the three-dimensional schematic diagram of conveying device 372 shown in Fig. 27, and Fig. 29 is a diagram 27 is a schematic cross-sectional view of the process operation equipment 350 in the middle layer, wherein the same elements or parts are represented by the same symbols. As shown in Figures 27 to 29, the process operation equipment 350 includes a columnar base 360, an automatic process control system (automatic process control system, APC system) 324, a plurality of fluid area control devices 322, at least one loading/loading out device

(loading/unloading device) 366 and at least one delivery device 372. The columnar base 360 can be a vertical base, wherein the process operation equipment 350 includes an upper layer, a middle layer and a lower layer, and each layer can be connected to six process devices. In this embodiment, one of the process devices in the middle layer can be the aforementioned loading/unloading device 366 , while the rest of the process devices can include the fluid area control device 322 or other required reaction chambers. The automatic process control system 324 can detect the process effect of the process operation equipment 350 in real time, so as to adjust the parameter settings of each process in real time. the

The fluid region control device 322 may have the structure of the fluid region control device 220, the fluid region control device 320 or the fluid region control device 720, and is located on at least one side of the columnar base 360 to perform an electrochemical plating on the semiconductor substrate 110. Process, a cleaning process or a chemical mechanical polishing process, etc., are various semiconductor processes with fluids. In other words, each fluid area control device 322 has a substrate carrying base 130 and a process system 368 respectively. When the fluid area control device 322 is applied to the electrochemical plating process, the process system 368 can be the anode system 114; when the fluid area control device 322 is applied to the cleaning process, the process system 368 can be the pipeline system 214; when the fluid area control device 322 When applied to a chemical mechanical polishing process, the process system 368 can be a polishing system 714 . the

As shown in FIG. 29 , the column base 360 includes a cylindrical support 362 and a shell 364 with a prismatic structure. In this embodiment, the housing 364 is a hexagonal column structure with six sides. The cylindrical support 362 can be connected to five process systems 368 and one loading/unloading device 366 on the middle layer, and each process system 368 and loading/unloading device 366 can correspond to a side of the housing 364 . In other embodiments of the present invention, the columnar abutment 360 may include brackets and casings of any shape, such as various prismatic brackets, spiral brackets, or cylindrical casings, and the like. the

The conveying device 372 is located around the column base 360 and is used to transfer the plurality of semiconductor substrates 110 to the loading/unloading device 366 respectively. When the process operation is to be performed, the robotic arm 374 of the conveying device 372 can first slide to where the semiconductor substrate 110 to be processed is located, so as to pick up a semiconductor substrate 110 . Afterwards, the transport device 372 is used to move and rotate the semiconductor substrate 110 so that the semiconductor substrate 110 is placed in parallel on the platform of the loading/unloading device 366 . The loading/unloading device 366 is arranged parallel to the side of the columnar base 360 for loading and/or unloading the semiconductor substrate 110 into and/or unloading the columnar base 360, which may also have a The vacuum chuck is used to fix the semiconductor substrate 110 . The mechanical arm 374 is preferably a multi-blades mechanical arm, and its joints can rotate freely so that the mechanical arm 374 can grasp and move in three dimensions. the

After a single semiconductor substrate 110 is placed on the loading/unloading device 366, the columnar base 360 can be rotated horizontally and/or moved up and down, and the semiconductor substrate 110 is placed on the substrate carrying base 130 of a fluid area control device 322 , and then the loading/unloading device 366 rotates back to the original position corresponding to the conveying device 372 . At this time, the conveying device 372 can repeat the above-mentioned conveying steps to convey the next semiconductor substrate 110 until each substrate carrying base 130 of each layer of the process operation equipment 350 is loaded with a semiconductor substrate 110 . the

Subsequently, an electrochemical plating process, a crystal face/crystal back/crystal edge cleaning process, a chemical mechanical polishing process and/or an electrochemical mechanical polishing process may be performed on each of the semiconductor substrates 110 in any one of the aforementioned operation modes. After the process is finished, the cylindrical support 362 can rotate horizontally and/or move up and down, so as to carry each semiconductor substrate 110 out of the columnar base 360 . Thereafter, the cylindrical support 362 may continue to load the semiconductor substrate 110 to be processed. the

In other embodiments of the present invention, the positions of the fluid area control device 322 and the loading/unloading device 366, as well as the process performed by the fluid area control device 322 can be exchanged or adjusted, and the process operation equipment 350 can also include Other types of process equipment, such as a drying unit. the

Because the present invention uses the control fluid to control the position of the process fluid, unlike the traditional process where the semiconductor substrate 110 is immersed in the solution tank, so in this embodiment, the fluid area control device 322 need not be limited to the horizontal placement mode, Instead, both the semiconductor substrate 110 and the fluid area control device 322 can be operated upright. Therefore, the process operation equipment 350 can be designed as a vertical equipment, and the loading/unloading device 366 is vertically integrated into the process operation equipment 350 , thereby effectively saving the occupied area of the process operation equipment 350 . In addition, the process operation equipment 350 can also perform batch processing on the semiconductor substrate 110 , so the throughput of the process can be greatly improved. the

In addition, the present invention can also integrate the fluid area control device and various reaction devices into the same process operation equipment. Please refer to FIG. 30 . FIG. 30 is a schematic diagram of a process operation equipment 450 according to a fifth preferred embodiment of the present invention, wherein the same components or parts are still represented by the same symbols. As shown in Figure 30, the process operation equipment 450 includes an automatic process control system 324, a loading/unloading device 466, at least one fluid area control device 420, at least one conveying device 472, at least one seed crystal deposition reaction chamber 478, At least one barrier deposition chamber 482, at least one drying chamber 484, and at least one pre-deposition chamber 486 (eg, solvent cleaning or plasma cleaning chamber). the

In this embodiment, the delivery device 472 can be a robot arm. After the semiconductor substrate 110 is placed into the loading/unloading device 466 of the process operation equipment 450, the transport device 472 can transfer the semiconductor substrate 110 to and from the loading/unloading device 466, the fluid area control device 420, and the seed crystal deposition reaction chamber. 478 , between the barrier layer deposition reaction chamber 482 , the drying reaction chamber 484 and the pre-deposition reaction chamber 486 . The loading/unloading device 466 can be used as a loading and unloading device at the same time, and in other embodiments, the process operation equipment 450 can also include a loading and unloading device. the

The fluid region control device 420 may have the structure of the fluid region control device 220, the fluid region control device 320 or the fluid region control device 720, and is used to perform an electrochemical plating process, a cleaning process or a chemical mechanical polishing process on the semiconductor substrate 110. And so on all kinds of semiconductor process with fluid. The seed crystal deposition reaction chamber 478 can be used to perform a seed crystal deposition process on the semiconductor substrate 110, the barrier layer deposition reaction chamber 482 can be used to perform a barrier layer deposition process on the semiconductor substrate 110, and the drying reaction chamber 484 can be used to perform a barrier layer deposition process on the semiconductor substrate 110. A drying process and/or an annealing process are performed, and the pre-deposition chamber 486 is used for performing a pre-deposition process on the semiconductor substrate 110 . the

It is particularly noted that the seed crystal deposition chamber 478 , the barrier layer deposition chamber 482 , the drying chamber 484 , and the pre-deposition chamber 486 are not actually essential components of this embodiment. The main feature of this embodiment is that the fluid area control device 420 of the present invention does not need to have a huge electroplating solution tank, does not need to install the semiconductor substrate 110 between the cathode electrode and the fixed component in advance, and does not need to be limited to a vacuum environment. Therefore, it can be easily integrated into the same process operation equipment 450 together with other various reaction devices. Therefore, those skilled in the art should understand that the seed crystal deposition reaction chamber 478, the barrier layer deposition reaction chamber 482, the drying reaction chamber 484 and the pre-deposition reaction chamber 486 of this embodiment can actually be replaced by other processes. Reaction chambers, such as post-deposition (post-deposition) chambers, polishing process chambers, sputtering process chambers, any chemical vapor deposition chambers, or any physical vapor deposition chambers, etc. the

Please refer to FIG. 31 . FIG. 31 is a schematic diagram of a process operation equipment 850 according to a sixth preferred embodiment of the present invention, wherein the same components or parts are still represented by the same symbols. As shown in Figure 31, the process operation equipment 850 is an all-in-one system or a cluster system (cluster system), including an automatic process control system 324, at least one loading port (loadpart) 816, At least one single wafer load lock chamber (SWLL chamber) 830, two pre-cleaning chambers (pre-cleaning chamber) 840, 822, at least one tantalum/tantalum nitride deposition chamber (Ta/TaN deposition chamber) 852, at least one copper seed deposition reaction chamber 812, two buffer chambers (buffer chamber) 832, 842, two copper electrochemical plating (Cu ECP) reaction chambers 860, 802, two copper chemical mechanical polishing (Cu CMP) Reaction chambers 870, 890, at least one cap layer reaction chamber 880, and three robotic arms 872, all process steps can be performed without breaking the vacuum by using the SoC. the

The loading port 816 is used for loading wafer cassettes, and is the entrance and exit of the wafer cassettes into and out of the process equipment 850 to provide wafer processing. In order to be suitable for mini-environment technology, the load port 816 may have at least one chip interface 810 . Wherein, the chip interface 810 may be a standard mechanical interface (SMIF), for loading at least one standardized SMIF type chip box. Alternatively, the chip interface 810 of the loading port 816 can also be a chip box suitable for a front opening unified pod (FOUP). It should be noted that the process operation equipment 850 can include a plurality of loading ports 816, and the loading port 816 can have a plurality of wafer interfaces 810, and these loading ports 816 or wafer interfaces 810 can actually be installed in any of the process operation equipment 850. Location. the

The single wafer carrier chamber 830 may have an orientor for aligning the orientation of the wafer, or aligning the notch to the desired position. Alternatively, the single wafer carrier chamber 830 can be used to degas, cool, pump, purge, etc. the wafer. The pre-cleaning reaction chamber 840 and the pre-cleaning reaction chamber 822 can perform a pre-cleaning process on the wafer before the deposition process on the wafer. The titanium/titanium nitride deposition reaction chamber 852 is used to deposit a titanium metal layer and/or a titanium nitride layer on the wafer surface, and the titanium metal layer or titanium nitride layer can be used as a barrier between the dielectric layer and the copper layer layer. The copper seed deposition reaction chamber 812 can deposit a copper seed layer on the wafer surface. The buffer chamber 832 and the buffer chamber 842 can be used as an orientation plane aligner, and can also perform steps such as degassing, cooling, blowing, cleaning, anneal, or metrology on the wafer. the

The copper electrochemical plating reaction chamber 860 and the copper electrochemical plating reaction chamber 802 can have the structure of the aforementioned fluid area control device 220, and are used to perform an electrochemical plating process on the semiconductor substrate 110, so as to plate a copper on the surface of the aforementioned copper seed layer. layers of copper required for the layer. The copper chemical mechanical polishing reaction chamber 870 and the copper chemical mechanical polishing reaction chamber 890 can have the structure of the aforementioned fluid area control device 720 for performing a chemical mechanical polishing process on the semiconductor substrate 110 . In addition, the copper electrochemical plating reaction chamber 860, the copper electrochemical plating reaction chamber 802, the copper chemical mechanical polishing reaction chamber 870, and the copper chemical mechanical polishing reaction chamber 890 can all be used to perform a pre-cleaning process and a post-cleaning process on the semiconductor substrate 110 ( post cleaning) process or a drying process. The cover layer reaction chamber 880 is used to deposit a cover layer on the surface of the wafer to protect the surface of the wafer, which can prevent the copper layer of the wafer from being oxidized to form oxides after leaving the process operation equipment 850, and can also prevent external pollutants from contacting under the cover layer. layer of material or device. the

In this embodiment, the robotic arm 872 can be a single blade robotic arm or a multiple blades robotic arm. After the wafer is placed in the process operation equipment 850, the robot arm 872 can transfer the wafer back and forth between the loading port 816, the single wafer carrier chamber 830, the buffer chamber 832, 842 and each reaction chamber 802, 812, 822, 840, 852, 860, Between 870, 880, 890. the

Those skilled in the art should understand that each reaction chamber 802, 812, 822, 840, 852, 860, 870, 880 of this embodiment can , 890 can actually be replaced by other process chambers, such as post-deposition chambers, sputtering process chambers, any chemical vapor deposition chambers or any physical vapor deposition chambers, and so on. This embodiment uses a copper process to illustrate the process equipment of the present invention applied to a full-featured system of a back-end process (back-end-of-the-line process, BEOL process), which has ordinary knowledge in the technical field It should also be understood that the present invention need not be limited to copper processes, but may be used to form any desired material layers or semiconductor structures. the

Furthermore, the present invention can also use a conveyor belt as a transport medium for the semiconductor substrate 110 inside the process operation equipment. Please refer to FIG. 32 . FIG. 32 is a schematic diagram of a process operation equipment 550 according to a seventh preferred embodiment of the present invention, wherein the same elements or parts are still represented by the same symbols. As shown in Figure 32, the process operation equipment 550 includes an automatic process control system 324, a loading/unloading device 466, at least one fluid area control device 520, at least one conveyor belt 572, at least one seed crystal deposition reaction chamber 478, At least one barrier layer deposition chamber 482 , at least one drying chamber 484 and at least one pre-deposition chamber 486 . Wherein, the fluid region control device 520 may have the structure of the fluid region control device 220, the fluid region control device 320 or the fluid region control device 720, and is used to perform an electrochemical plating process, a cleaning process or a chemical mechanical process on the semiconductor substrate 110. Polishing process and so on. the

The main difference from the fifth embodiment is that the conveying device of this embodiment includes a conveying belt 572 . After the semiconductor substrate 110 is placed in the loading/unloading device 466 of the process operation equipment 550, the conveyor belt 572 can carry the semiconductor substrate 110 to and from the fluid area control device 420, the seed crystal deposition reaction chamber 478, and the barrier layer deposition reaction chamber. 482 , between the drying reaction chamber 484 and the pre-deposition reaction chamber 486 . Because the fluid area control device 520 of the present invention does not need to install the semiconductor substrate 110 between the cathode electrode and the fixed assembly in advance, the process operation equipment 550 only needs to use a simple conveyor belt 572 to place the semiconductor substrate 110 into each reaction. The room accepts process treatment. the

Traditional electrochemical plating devices, traditional cleaning processes, or traditional chemical mechanical polishing devices are usually open systems, and the process fluid or chemical substances in it are easy to escape into the surrounding environment, which greatly increases the humidity around the device and may cause The presence of polluting chemicals in the surrounding environment makes these traditional devices difficult to integrate with other process devices. Since the usage of process fluid in the fluid area control device of the present invention is reduced, and the process fluid can be quickly recovered by the fluid area control device, the fluid area control device itself and the surroundings of the fluid area control device can have less humidity. Therefore, the fluid area control device of the present invention can overcome the limitations of known devices, and can be integrated with various reaction devices in the same process operation equipment. On the one hand, it can save the transportation time of the semiconductor substrate between various machines and equipment, and on the other hand, it can prevent the material layer of the semiconductor substrate from being oxidized by the outside during the transportation process, thereby saving the huge process time and time required for oxide removal. Process cost. the

In addition, the present invention can also use the conveyor belt and the mechanical arm as the conveying equipment of the process operation equipment. Please refer to FIG. 33 . FIG. 33 is a schematic diagram of a process operation equipment 650 according to an eighth preferred embodiment of the present invention, wherein the same components or parts are still represented by the same symbols. As shown in FIG. 33 , the process operation equipment 650 includes an automatic process control system 324 , at least one fluid area control device 620 , a conveyor belt 672 and a robot arm 674 . Wherein, the fluid area control device 620 may have the structure of the fluid area control device 220, the fluid area control device 320 or the fluid area control device 720, and is used to perform an electrochemical plating process, a cleaning process or a chemical mechanical process on the semiconductor substrate 110. Polishing process and so on. The robotic arm 674 is used to transfer the semiconductor substrate 110 to and from the conveyor belt 672 and the fluid area control device 620 , and the conveyor belt 672 is used to transfer the semiconductor substrate 110 into and out of the process operation equipment 650 . the

When being processed by the fluid area control device 620 , the semiconductor substrate 110 to be processed is first transported to the surroundings of the fluid area control device 620 through the conveyor belt 672 . Next, the robot arm 674 clamps the aforementioned semiconductor substrate 110 and places the semiconductor substrate 110 on the substrate carrying base 130 of the fluid region control device 620 . Afterwards, the fluid region control device 620 may firstly perform an electrochemical plating process or a cleaning process on the semiconductor substrate 110 . After the fluid area control device 620 finishes processing, the robotic arm 674 puts the semiconductor substrate 110 back on the conveyor belt 672, and the semiconductor substrate 110 is sent to the subsequent process equipment by the conveyor belt 672. At this point, the process operation equipment 650 can continue to process the next semiconductor substrate 110 . the

It can be seen that since the semiconductor substrate does not need to be placed between the cathode electrode and the fixed assembly, and does not need to be obliquely placed in the electroplating fluid, the process operation equipment of the present invention can process a large number of semiconductor substrates in batches, effectively improving the product quality. output. The substrate carrying base can use its conveyor belt or ring structure to directly transfer the semiconductor substrate to the predetermined position to receive the treatment of the process fluid, so the process operation equipment can even omit the loading/unloading device of the semiconductor substrate, and the wetting of the semiconductor substrate The process is also simpler than known techniques. the

The above descriptions are only preferred embodiments of the present invention, and all equivalent changes and modifications made according to the claims of the present invention shall fall within the scope of the present invention. the

Claims (41)

1. A fluid area control device for electroplating, comprising: at least one substrate carrying base for carrying at least one semiconductor substrate; At least one cathode electrode is disposed on the substrate carrying base for electrically connecting the semiconductor substrate; At least one anode system, located above the substrate carrying base, is arranged corresponding to the semiconductor substrate, and is separated from the substrate carrying base by a reaction height, at least one area to be treated is defined between the anode system and the cathode electrode, and at least one non-treatment area; At least one control fluid supply pipeline is arranged corresponding to the non-treatment area for providing at least one control fluid; At least one control fluid recovery pipeline is arranged corresponding to the non-treatment area for recovering the control fluid; At least one process fluid supply pipeline is arranged corresponding to the area to be treated for providing at least one electroplating fluid; and At least one process fluid recovery pipeline is arranged corresponding to the area to be treated, for recovering the electroplating fluid. 2. The fluid area control device as claimed in claim 1, wherein the fluid area control device is applied to at least one electrochemical plating process. 3. The fluid area control device as claimed in claim 1, wherein the control fluid is in a liquid state, a gas state, a vapor state or a colloidal state. 4. The fluid region control device as claimed in claim 1, wherein the semiconductor substrate is a wafer, the region to be treated corresponds to a crystal plane of the wafer, and the untreated region corresponds to a crystal edge of the wafer. 5. A fluid area control device, comprising: At least one substrate carrying base is used to carry at least one semiconductor substrate, and at least one area to be processed and at least one non-processing area are defined on the base carrying base; At least one fixing component is arranged on the substrate carrying base for fixing the semiconductor substrate; At least one control fluid supply pipeline is arranged corresponding to the non-treatment area for providing at least one control fluid; At least one control fluid recovery pipeline is arranged corresponding to the non-treatment area for recovering the control fluid; at least one process fluid supply pipeline, arranged corresponding to the area to be treated, for providing at least one process fluid; and At least one process fluid recovery pipeline is arranged corresponding to the area to be treated, for recovering the process fluid. 6. The fluid region control device as claimed in claim 5, wherein the fluid region control device is applied to at least one solvent cleaning process, at least one electroless plating process or at least one crystal back/edge cleaning process. 7. The fluid area control device as claimed in claim 5, further comprising at least one pipeline system, located above the substrate supporting base, corresponding to the semiconductor substrate, and separated from the substrate supporting base by a reaction height. 8 . The fluid area control device as claimed in claim 5 , further comprising at least one polishing system, located above the substrate carrying base and corresponding to the semiconductor substrate. 9. The fluid area control device of claim 8, wherein the polishing system comprises at least one polishing pad. 10. A process operation equipment, comprising: at least one columnar abutment; and At least one fluid area control device is located on at least one side of the columnar base, the fluid area control device includes: At least one substrate carrying base is arranged parallel to the side surface of the columnar base for carrying at least one semiconductor substrate; at least one fixing component for fixing the semiconductor substrate; at least one process fluid supply pipeline for providing at least one process fluid; at least one process fluid recovery pipeline for recovering the process fluid; at least one control fluid supply line, disposed around the semiconductor substrate, for providing at least one control fluid; and At least one control fluid return pipeline is arranged around the semiconductor substrate for recovering the control fluid. 11. The process operation facility of claim 10, further comprising at least one automated process control system. 12. The process tool of claim 10, wherein the columnar submount is a vertical submount. 13. The process tool of claim 10, wherein the columnar submount has multiple sides. 14. The process operation equipment as claimed in claim 10, further comprising at least one loading/unloading device, located on at least one side of the columnar base, for loading/unloading the semiconductor substrate into/out of the columnar base . 15. The process equipment as claimed in claim 14, wherein the loading/unloading device is disposed parallel to the side surface of the columnar base. 16. The process operation equipment as claimed in claim 14, further comprising at least one conveying device, located around the columnar base, for transferring the semiconductor substrate to the loading/unloading device. 17. The process operation equipment as claimed in claim 16, wherein the conveying device first rotates the semiconductor substrate to make the semiconductor substrate parallel to the loading/unloading device, and then puts the semiconductor substrate into the loading/loading device. out of the device. 18. The process operation equipment as claimed in claim 10, wherein the columnar base has functions of horizontal rotation and vertical movement. 19. The process tool of claim 10, wherein the fixed component is a cathode electrode and is electrically connected to the semiconductor substrate. 20. The process equipment of claim 19, further comprising at least one anode system, wherein the anode system comprises at least one anode electrode and at least one sensor. 21. The processing equipment as claimed in claim 10, wherein the fluid area control device is applied to at least one electrochemical plating process, at least one polishing process or at least one crystal face/crystal back/crystal edge cleaning process. 22. A process operation equipment, comprising: at least one loading/unloading device for loading/unloading at least one semiconductor substrate; at least one conveying device for conveying the semiconductor substrate; at least one seed crystal deposition chamber for performing at least one seed crystal deposition process on the semiconductor substrate; and at least one fluid zone control device comprising: at least one substrate carrying base for carrying the semiconductor substrate; at least one fixing component for fixing the semiconductor substrate; at least one process fluid supply pipeline for providing at least one process fluid; at least one process fluid recovery pipeline for recovering the process fluid; at least one control fluid supply line, disposed around the semiconductor substrate, for providing at least one control fluid; and At least one control fluid return pipeline is arranged around the semiconductor substrate for recovering the control fluid. 23. The processing equipment of claim 22, further comprising at least one barrier layer deposition chamber for performing at least one barrier layer deposition process on the semiconductor substrate. 24. The process operation facility of claim 22, further comprising at least one automated process control system. 25. The processing equipment as claimed in claim 22, further comprising at least one drying chamber for performing at least one drying process and/or an annealing process on the semiconductor substrate. 26. The processing equipment as claimed in claim 22, further comprising at least one pre-deposition chamber for performing at least one pre-deposition process on the semiconductor substrate. 27. The process tool of claim 22, wherein the fixed component is a cathode electrode and is electrically connected to the semiconductor substrate. 28. The process equipment of claim 27, further comprising at least one anode system, wherein the anode system comprises at least one anode electrode and at least one sensor. 29. The process operation equipment as claimed in claim 22, wherein the fluid region control device is used to perform at least one electrochemical plating process, at least one crystal face/crystal back/crystal edge cleaning process, at least one chemical Mechanical polishing process and/or at least one electrochemical mechanical polishing process. 30. The process operation plant of claim 22, wherein the process operation plant is a full-featured system or a cluster system. 31. The process operation equipment of claim 22, wherein the process operation equipment is applied to at least one copper process. 32. The process operation equipment as claimed in claim 22, wherein the conveying device comprises at least one robot arm or at least one conveyor belt. 33. A method of operating a fluid zone control device comprising: Provide at least one fluid region control device, the fluid region control device includes at least one substrate bearing base, at least one control fluid supply pipeline and at least one control fluid return pipeline, and at least one to-be-processed fluid region control device is defined area and at least one non-processing area; providing at least one semiconductor substrate, the semiconductor substrate is fixed on the substrate carrying base; opening the control fluid supply line and the control fluid return line, so that at least one control fluid continuously flows out of the control fluid supply line and flows into the control fluid return line, wherein the control fluid flows through the fluid area control device non-processing areas; and At least one process fluid is provided, the process fluid contacts the region to be treated of the fluid region control device, and the process fluid is insoluble in the control fluid. 34. The operating method as claimed in claim 33, wherein the operating method is applied to at least one electrochemical plating process, at least one crystal face/crystal back/crystal edge cleaning process, at least one chemical mechanical polishing process or at least one electrochemical Mechanical polishing process. 35. The method of operation of claim 33, wherein the process fluid is an electroplating fluid, a cleaning fluid, a supercritical fluid, or a polishing slurry. 36. The operating method of claim 33, wherein the control fluid is in a liquid state, a gaseous state, a steam state, a supercritical fluid or a colloidal state. 37. The method of operation of claim 33, wherein the semiconductor substrate is a wafer. 38. The operating method as claimed in claim 37, wherein the region to be processed corresponds to a crystal plane of the wafer, and the non-processed region corresponds to a crystal edge of the wafer. 39. The operating method as claimed in claim 37, wherein the area to be processed corresponds to a crystal edge of the wafer, and the non-processed area corresponds to a crystal plane of the wafer. 40. The operating method as claimed in claim 37, wherein the area to be processed corresponds to a crystal face of the wafer, and the non-processed area corresponds to a crystal back of the wafer. 41. The operating method as claimed in claim 37, wherein the area to be processed corresponds to the crystal back of the wafer, and the non-processed area corresponds to the crystal plane of the wafer.

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