CN101432865A - Method of plasma processing with in-situ monitoring and process parameter tuning - Google Patents
Method of plasma processing with in-situ monitoring and process parameter tuning Download PDFInfo
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- CN101432865A CN101432865A CNA2007800152835A CN200780015283A CN101432865A CN 101432865 A CN101432865 A CN 101432865A CN A2007800152835 A CNA2007800152835 A CN A2007800152835A CN 200780015283 A CN200780015283 A CN 200780015283A CN 101432865 A CN101432865 A CN 101432865A
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Abstract
A method of selecting plasma doping process parameters includes determining a recipe parameter database for achieving at least one plasma doping condition. The initial recipe parameters are determined from the recipe parameter database. In-situ measurements of at least one plasma doping condition are performed. The in-situ measurements of the at least one plasma doping condition are correlated to at least one plasma doping result. At least one recipe parameter is changed in response to the correlation so as to improve at least one plasma doping process performance metric.
Description
The employed chapter title of this paper is for organizational goal, and should not be construed as the subject matter described in restriction the application case.
Technical field
The present invention relates to have the method for plasma processing of in-situ monitoring and process parameter tuning.
Background technology
Plasma treatment (Plasma processing) is widely used in semiconductor and the existing many decades of other industry.Plasma treatment is used for for example cleaning tasks such as (cleaning), etching, grinding (milling) and deposition.Recently, plasma treatment has been used for mixing.Plasma doping be sometimes referred to as PLAD or plasma immersion ion implant (plasma immersi onion implantation, PIII).Developed plasma doping system to satisfy the doping requirement of some hyundai electronics and Optical devices.
Plasma doping fundamentally is being different from conventional beam line ion implant system (beam-lineion implantation systems), described system quickens ion with electric field and then comes described ion is filtered according to its mass-to-charge ratio, is used for implanting to select required ion.On the contrary, plasma implantation system is immersed in object in the plasma that contains dopant ion (dopant ions), and with a succession of negative voltage pulse (negative voltage pulses) (bias) object of setovering.Electric field in the plasma sheath (plasma sheath) quickens ion head for target thing, and then described ion is implanted in the object surface.
Be used for the plasma doping system very high-precision process control of needs usually of semi-conductor industry.The conventional beam line ion implant system that is widely used in semi-conductor industry has good process control and is also having process control (run-to-run processcontrol) between good batch during the plasma doping.Conventional beam line ion implant system provides on the whole surface of prior art Semiconductor substrate highly uniformly and mixes.In general, the process control of plasma doping system is so good not as conventional beam line ion implant system.
By obtaining data from various off-lines experiments (off-line experiments), described data being analyzed and then changing recipe parameters (recipe parameters) in response to described analysis optimizes known plasma doping process.The present invention relates to the in-situ monitoring (In-situ monitoring) and the optimization of apparatus for processing plasma (for example plasma doping equipment).In-situ monitoring and optimization can improve the process control of plasma doping equipment greatly.
Summary of the inventionDo not have
Description of drawings
According to preferred and one exemplary embodiment, the present invention and further advantage thereof are described more specifically in the following detailed description of being carried out in conjunction with the accompanying drawings.Described graphic may not the drafting in proportion, but focus on explanation principle of the present invention substantially.
Fig. 1 illustrates the flow chart that has the plasma doping of in-situ monitoring and process parameter tuning according to of the present invention.
Embodiment
Now teaching of the present invention is described in more detail referring to one exemplary embodiment as shown in the drawing.Although describe this teaching, do not wish that this teaching is limited to this a little embodiment in conjunction with various embodiment and example.On the contrary, this teaching contains various replacement schemes, modification and equivalent, as is understood by those skilled in the art that.That has read this paper teaching those skilled in the art will realize that extra embodiment, modification and embodiment, and other use field, and these all are in the scope of the present invention as described herein.
For instance, describe the method for improving process control of the present invention, should be appreciated that method of the present invention can be applicable to the plasma process of any kind though binding plasma mixes.Specifically, uniformity according to the present invention is improved one's methods and also be can be applicable to plasma process system, comprises the system that is used for deposition (for example chemistry and physical deposition) and is used for the etching system of (comprising reactive ion etching (reactive ion etching) and physical etch).
Should be appreciated that each step of method of the present invention can any order be carried out and/or carry out simultaneously, as long as the present invention still is exercisable.In addition, should be appreciated that equipment of the present invention can comprise any number or all described embodiment, as long as the present invention still is exercisable.
In known plasma doping system, by utilizing experimental design (design ofexperiment, DOE) method is optimized the plasma doping recipe parameters, for example plasma power, chamber pressure, flow rate of gas, dosage, uniformity and energy.Term " recipe parameters " changes the physical device setting or the operating parameter of the plasma doping condition in the handling implement in this article with finger through definition.Recipe parameters is configured for carrying out the process or the method for making of particular procedure operation (that is plasma doping operation).
Experimental design method comprises the various off-line measurements of carrying out parameter of crystal sheets (wafer parameters), described parameter of crystal sheets for example for annealing back resistivity (resistivity after anneal, Rs) and/or before junction depth (junction depth) and the annealing with afterwards steepness (abruptness).For instance, can carry out resistivity measurement from simple probe measurement (probe measurements).Available experimental technique is measured (secondary ion mass spectrometry, SIMS) measurement of data acquisition junction depth from secondary ion mass spectroscopy.Then analyze data from off-line measurement.Can manually or by computer program analyze described data.For instance, can use various commercially available software analysis tools to analyze data, or can write special-purpose DAP by the user.Then obtain improved recipe parameters from described data analysis.
Then use and create improved treatment conditions through improved recipe parameters.Online (the on line) that does not re-use the plasma doping condition that fixing recipe parameters is created measures or further improvement or optimization are carried out in site measurement.Term " in site measurement " is in this article through any measurement of definition with the article on plasma body doping condition of execution when referring to handle wafer or other workpiece.Such optimization is sometimes referred to as " open loop optimization (open-loop optimization) ", dynamically revises recipe parameters because the measurement of current plasma doping condition was not used in plasma doping operating period.
Open loop optimization tends to because many former thereby do not reach best tool operation.For instance, the plasma doping condition in the known open loop plasma process system is tended to and can be offset in time, because chamber conditions and plasma characteristics tend to and can change according to the time.Known plasma doping, plasma-enhanced chemical gas deposition (plasma enhanced chemical vapordeposition, PECVD) and plasma etch system attempt by periodically cleaning and/or the adjustment process chamber compensates this type of change in chamber and the plasma characteristics.
Chamber clean and adjusting program are used for after certain processing time of measuring passes, and for example after the wafer of handling predetermined number, effectively plasma chamber condition (plasmachamber conditions) are reset to some initial condition.Wafer scale (wafer level) sensitiveness of article on plasma fluid chamber condition changing is as a result determined the cleaning and the time interval of regulating.Determining maximum cleaning and/or regulating the time interval is important for total instrument treating capacity and the process repeatability of maximization.Yet periodically cleaning and/or adjustment process chamber will reduce wafer throughput and increase total processing cost.In addition, need compensation idle by the instrument that adjusting causes, idle also the influence unfriendly of instrument produced the instrument availability of handling.
The advanced semiconductor manufacture process often needs tight process control.Specifically, the plasma doping process need that is used to make advanced semiconductor very accurately control in each wafer, between wafer and batch between implant dosage and material mix.The periodic purge of process chamber and/or adjusting may be unacceptable for these are used, because recipe parameters may be offset (drift) between cleaning step.
The method according to this invention is carried out recipe parameters closed loop tuning (closed-loop tuning) adjusting the plasma doping condition, so that come in some way to stablize and/or improve the handling implement performance.Term " the recipe parameters closed loop is tuning " provides the data about current operating condition through definition to refer to the use in site measurement in this article, and described data are used for adjusting recipe parameters during handling.In certain embodiments, method execution recipe parameters closed loop of the present invention is tuning to adjust the plasma doping condition, so that optimize one or more treatment conditions.In addition, in certain embodiments, it is tuning adjusting the plasma doping condition that method of the present invention is carried out the recipe parameters closed loop, so that development instrument cost measures, and for example process tool treating capacity and/or utilance.
For instance, in certain embodiments, method of the present invention is carried out the recipe parameters selection or is optimized, it provides process improvement, the wafer throughput of for example higher (or the highest) (wafer/hour), retained dose, the uniformity on the wafer of higher (or the highest) and/or any other procedure parameter that obtains from customer requirements.In some specific embodiments, method of the present invention is at some customer requirement (for example distinguishing angle dosage control (angle dose control)) and the optimizing process instrument.District's angle dosage control is important for many application.For instance, district's angle dosage control must be higher relatively for (conformal doping applications) used in the conformal doping, and (for example source drain expansion (source drain extens ion, SDE)) must relative narrower for some other application.
More particularly, in some embodiments of the invention, plasma process optimization method according to the present invention comprise use based on the recipe parameters generator of model to select initial recipe parameters.Term " based on the recipe parameters generator of model " is in this article through defining to refer to based on any member that calculates recipe parameters based on the method for numerical value or rule.Under current operating condition, carry out in site measurement.Then in site measurement is analyzed and made it relevant with at least one process result.Then adjust with the relevant of at least one plasma doping result in response in site measurement or " tuning " described recipe parameters in one or more so that improvement or optimizing process.These recipe parameters through improving or optimizing are through selecting to realize required result, the improvement or the optimization of for example higher levels of process repeatability, higher levels of dose cycle (dose l oop) and/or system throughput and utilance.In many examples, the method is the nonlinear optimization method.
Fig. 1 shows according to flow process Figure 100 with plasma doping of in-situ monitoring and process parameter tuning of the present invention.In certain embodiments, described method execution in-situ monitoring and process parameter tuning are measured to realize improved process performance and/or improved process cost.In other embodiments, described method is carried out in-situ monitoring and process parameter tuning to optimize at least one process performance and measure and/or process cost is measured.
In first step 102, the user imports required process result.For the plasma doping process, required process result comprises wafer scale and implants parameter, for example the junction depth curve steepness (annealed junction depth profile abruptness) (implantation) of implant dosage, implantation energy, minimum uniformity, dopant, sheet resistance (sheet resistance) (implantation) and annealing.Usually, the junction depth curve of annealing is characterized by junction depth and knot steepness.
In second step 104, create the recipe parameters database at the required plasma treatment result who is keyed in the first step 102.In certain embodiments, described method uses recipe parameters generator based on model to produce the recipe parameters database.In various other embodiment, the user directly enters data in the recipe parameters database or uses one in some predetermined recipe parameters databases.
In certain embodiments, produce the recipe parameters database by at first using experimental design method to carry out off-line measurement.Term " off-line measurement " is in this article through being defined as the measurement of carrying out after process stops.Usually, handle a plurality of testing wafers, and then it is removed to carry out off-line measurement from treatment facility.Then use off-line measurement determine various plasma process tools parameters or setting, and process or wafer scale result between relation.In many examples, the relation between various plasma process tools parameters and procedure level (process level) result is stored in the Computer Database.
In third step 106, the recipe parameters database that is produced from second step 104 is keyed in (entered) or is imported initial recipe parameters.Use the analysis of the relation between various plasma process tools parameters and the result to determine initial recipe parameters.Result is the wafer scale result of process.The plasma process tools parameter is the actual treatment instrument setting that is used to produce and keep plasma and processing environment.These process tool parameters or setting are by manually typing in or being keyed in the computer program.Can be RF power, chamber pressure, DC bias voltage, dopant and diluent gas mobile (dopant and dilution gas flows), DC pulse frequency and pulse length from the example of the definite process tool parameters of recipe parameters database.
In certain embodiments, initial recipe parameters is represented the user's best estimate at the recipe parameters of the required result of direct realization.In other embodiments, initial recipe parameters is to be applicable to that using method of the present invention to carry out " tuning " improves or the parameter of optimizing process result's recipe parameters effectively to converge on.
In certain embodiments, operational analysis/statistical model is established initial recipe parameters according to the recipe parameters database, and described model makes the plasma operations condition with relevant from the plasma doping result of various experimental designs and/or single argument test.In other embodiments, establish initial recipe parameters according to the plasma doping condition of previous optimization.
In the 4th step 108, monitor the plasma doping condition by carrying out the home position sensing measurement.The home position sensing of plasma doping condition measures available polytype transducer and deposition/etching/dose monitoring device (for example reflectometer) carries out, described transducer for example is optical emitting spectrometer (optical emission spectrometers), flight time (time of flight, TOF) analysis probe, bright wrong that (Langmuir) probe, quality and energy spectrometer instrument (mass and energyanalyzers), Faraday cup transducer (Faraday cup sensor).Home position sensing is measured the initial of the termination also can be used for trigger process and cleaning/adjusting sequence.
In the 5th step 110, make from the data of the in-situ monitoring of the plasma doping condition that is obtained in the 4th step 108 relevant with at least one plasma doping result.Described at least one plasma doping result is the wafer scale result who is used for characterizing doping, for example before resistivity, junction depth and the annealing with afterwards steepness.The above-mentioned relevant in site measurement of explaining sensing data in response to various recipe parameters that comprised.For instance, can make the change of the measured plasma ion component of TOF transducer relevant with the measurement of total ion dose.
In the 6th step 112, in response to performed relevant and change at least one recipe parameters in the 5th step 110, so that measure or performance metric improves or optimizes the plasma doping condition by at least one cost.In other words, in the 6th step 112, based on performed relevant and in the 5th step 110 with the new preparation method parameter of at least one recipe parameters " tuning " to more desirable (that is, improve or optimize at least one cost or performance metric).In various embodiments, " tuning " described at least one recipe parameters for example realizes particular procedure target, maximization instrument treating capacity and utilance and development repeatability to realize some customer requirement.
In the 7th step 114, determine the new plasma doping condition that change produced of at least one recipe parameters of execution in the 6th step 112.
In the 8th step 116, be made in whether determined new plasma doping condition is acceptable decision-making in the 7th step 114, described new plasma doping condition is corresponding to described at least one recipe parameters that changes in response to described being correlated with in the 6th step 112.In certain embodiments, make the decision-making of whether optimizing new plasma doping condition at least one plasma doping parameter.If it is acceptable that recipe parameters is pointed out in the decision-making in the 8th step 116, so terminating method 100 and can be in the 9th step 118 to wafer operation plasma doping process.
Yet, be unacceptable if recipe parameters is pointed out in the decision-making in the 8th step 116, method 100 causes the control return to the 4th step 108 so, wherein monitors the plasma doping condition by carrying out the home position sensing measurement once more.Method 110 then repeats, till process is moved in the 9th step 118.In this way, the method for describing in conjunction with Fig. 1 100 with nonlinear way initiatively " tuning " recipe parameters further to improve at plasma doping or other wafer scale result or to optimize the plasma doping condition.
In various embodiments, the in-situ monitoring of describing in conjunction with Fig. 1 and the procedure parameter system of selection can be used for individually or with other or side by side tuning any one recipe parameters of all recipe parameters.In one embodiment, each in a plurality of recipe parameters is set, and then uses in-situ monitoring and the procedure parameter system of selection described in conjunction with Fig. 1 to come individually tuning recipe parameters to improve or optimization plasma doping condition.In another embodiment, in-situ monitoring and the procedure parameter system of selection of describing in conjunction with Fig. 1 is used for tuning some or all of recipe parameters of while to improve or optimization plasma doping condition.
In-situ monitoring of describing in conjunction with Fig. 1 and procedure parameter system of selection can be used for reducing or minimize owing to cleaning and/or regulate the equipment downtime that plasma chamber causes, and therefore can improve instrument utilance and treating capacity.In addition, in-situ monitoring of describing in conjunction with Fig. 1 and procedure parameter system of selection can be used for the skew in the compensation plasma body doping condition, and therefore can produce more stable plasma doping condition, and it has improved the process repeatability.
Equivalent
Although describe this teaching, do not wish that this teaching is limited to this type of embodiment in conjunction with various embodiment and example.On the contrary, this teaching contains various replacement schemes, modification and equivalent, as is appreciated by those skilled in the art that, can make these replacement schemes, modification and equivalent under the situation that does not break away from the spirit and scope of the present invention in this teaching.
Claims (26)
1, a kind of method of selecting the plasma doping procedure parameter is characterized in that it comprises:
A. determine that the recipe parameters database is to realize at least one plasma doping result;
B. determine initial recipe parameters according to described recipe parameters database;
C. carry out the in site measurement of at least one plasma doping condition;
D. make the described in site measurement of described at least one plasma doping condition relevant with at least one plasma doping result; And
E. change at least one recipe parameters in response to described being correlated with, measure so that improve at least one plasma doping process performance.
2, method according to claim 1 is characterized in that design test is determined described recipe parameters database by experiment.
3, method according to claim 1 is characterized in that testing to determine described recipe parameters database by at least one single argument.
4, method according to claim 1, it further comprises the step that repeats the described in site measurement of described execution, the step relevant with described in site measurement and the step that changes described at least one recipe parameters, till realizing the required improvement that described at least one plasma doping process performance is measured.
5, method according to claim 4 is characterized in that described initial recipe parameters is chosen as and effectively converges on the recipe parameters that causes the described required improved recipe parameters that described at least one plasma doping process performance measures.
6, method according to claim 1 is characterized in that the described in site measurement of described execution comprises below the execution at least: optical emitting spectroscopic assay, ToF analysis, quality analysis, neutral component analysis, ion energy analysis, dosage analysis and plasma characteristics analysis.
7, method according to claim 1 is characterized in that described at least one plasma doping process performance is measured and comprises plasma doping instrument treating capacity.
8, method according to claim 1 is characterized in that described at least one plasma doping process performance is measured and comprises plasma doping dosage.
9, method according to claim 1 is characterized in that described at least one plasma doping process performance is measured and comprises the plasma doping uniformity.
10, method according to claim 1 is characterized in that described at least one plasma doping process performance is measured and comprises that the plasma slab angle distributes.
11, method according to claim 1 is characterized in that described in response to described relevant and change described at least one recipe parameters and optimized at least one plasma doping process performance and measure.
12, method according to claim 1 is characterized in that described in response to described relevant and change described at least one recipe parameters and optimized at least two plasma doping process performances and measure.
13, method according to claim 1, it is characterized in that the described described in site measurement that makes described at least one plasma doping condition relevant with described at least one plasma doping result comprise with analytical model relevant.
14, method according to claim 1, it is characterized in that the described described in site measurement that makes described at least one plasma doping condition relevant with described at least one plasma doping result comprise with statistical model relevant.
15, method according to claim 1 is characterized in that described comprise with from the data of experimental design test relevant relevant with described at least one plasma doping result of described in site measurement that makes described at least one plasma doping condition.
16, method according to claim 1, it is characterized in that the described described in site measurement that makes described at least one plasma doping condition relevant with described at least one plasma doping result comprise with data from the single argument test result relevant.
17, a kind of method of optimizing at least one plasma doping procedure parameter is characterized in that it comprises:
A. determine that the recipe parameters database is to optimize at least one plasma doping result;
B. determine initial recipe parameters according to described recipe parameters database;
C. carry out the in site measurement of at least one plasma doping condition;
D. make the described in site measurement of described at least one plasma doping condition relevant with at least one plasma doping result;
E. change at least one recipe parameters in response to described being correlated with, measure so that improve at least one plasma doping process performance; And
F. repeat the step of the described in site measurement of described execution, the step relevant and the step that changes described at least one recipe parameters, till at least one plasma doping process performance of optimization is measured with described in site measurement.
18, method according to claim 17, the described in site measurement of described execution comprise carry out following at least one: optical emitting spectroscopic assay, ToF analysis, quality analysis, neutral component analysis, ion energy analysis, dosage analysis and plasma characteristics analysis.
19, method according to claim 17 is characterized in that described at least one plasma doping process performance is measured and comprises plasma doping instrument treating capacity.
20, method according to claim 17 is characterized in that described at least one plasma doping process performance is measured and comprises plasma doping dosage.
21, method according to claim 17 is characterized in that described at least one plasma doping process performance is measured and comprises the plasma doping uniformity.
22, method according to claim 17, it is characterized in that the described described in site measurement that makes described at least one plasma doping condition relevant with described at least one plasma doping result comprise with analytical model relevant.
23, method according to claim 17, it is characterized in that the described described in site measurement that makes described at least one plasma doping condition relevant with described at least one plasma doping result comprise with statistical model relevant.
24, method according to claim 17 is characterized in that described comprise with from the data of experimental design test relevant relevant with described at least one plasma doping result of described in site measurement that makes described at least one plasma doping condition.
25, method according to claim 17, it is characterized in that the described described in site measurement that makes described at least one plasma doping condition relevant with described at least one plasma doping result comprise with data from the single argument test result relevant.
26, a kind of method of optimizing at least two plasma doping procedure parameters simultaneously is characterized in that it comprises:
A. determine that the recipe parameters database is to optimize at least one plasma doping result;
B. determine initial recipe parameters according to described recipe parameters database;
C. carry out the in site measurement of at least one plasma doping condition;
D. make the described in site measurement of described at least one plasma doping condition relevant with at least one plasma doping result;
E. change at least two recipe parameters in response to described being correlated with, measure so that improve at least one plasma doping process performance; And
F. repeat the step of the described in site measurement of described execution, the step relevant and the step that changes described at least two recipe parameters, till at least one plasma doping process performance of optimization is measured with described in site measurement.
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| CN101853780A (en) * | 2009-03-30 | 2010-10-06 | 索尼公司 | Ionizing radiation damage Forecasting Methodology and simulator and ionizing radiation equipment and method |
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| CN101853780A (en) * | 2009-03-30 | 2010-10-06 | 索尼公司 | Ionizing radiation damage Forecasting Methodology and simulator and ionizing radiation equipment and method |
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