[go: up one dir, main page]

CN101418435A - Method for forming protective layer on contour of workpiece - Google Patents

Method for forming protective layer on contour of workpiece Download PDF

Info

Publication number
CN101418435A
CN101418435A CNA2007101669130A CN200710166913A CN101418435A CN 101418435 A CN101418435 A CN 101418435A CN A2007101669130 A CNA2007101669130 A CN A2007101669130A CN 200710166913 A CN200710166913 A CN 200710166913A CN 101418435 A CN101418435 A CN 101418435A
Authority
CN
China
Prior art keywords
alloys
workpiece
alloy
nickel
inorganic layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007101669130A
Other languages
Chinese (zh)
Inventor
林新智
陈敏璋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CNA2007101669130A priority Critical patent/CN101418435A/en
Publication of CN101418435A publication Critical patent/CN101418435A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Chemical Vapour Deposition (AREA)

Abstract

The present invention provides a method of forming a protective layer on a profile of a workpiece. The workpiece is made of at least one metal and/or at least one alloy. The method of the present invention forms an inorganic layer on the profile of the workpiece by an atomic layer deposition process and/or a plasma enhanced atomic layer deposition process (or a plasma-assisted atomic layer deposition process), wherein the inorganic layer serves as the protective layer.

Description

On the profile of workpiece, form the method for protective layer
Technical field
The present invention relates to a kind of method that on the profile of workpiece (workpiece), forms protective layer (protection layer); be particularly related to that a kind of (Atomic Layer Deposition, ALD) processing procedure forms the method for protective layer on the profile of workpiece with ald.
Background technology
Common metal or alloy workpiece owing to be subjected to the infringement of external environment, may corrode the breakoff phenomenon that (corrosion), erosion (erosion) or abrasion (wear) etc. hate the sight of, and then influence the work-ing life of workpiece.
Generally speaking; on the contour surface of workpiece, form layer protective layer; the various characteristics of can certain degree ground strengthening workpiece; for example; erosion resistance (corrosion resistance), abrasion-resistance (erosionresistance), wear resistant (wear resistance), fatigue resistance (fatigue resistance) ... etc. characteristic, and then the work-ing life of lifting workpiece.In addition; be formed on the characteristic that protective layer on the contour surface of workpiece also can change the contour surface of workpiece; for example, characteristics such as insulating characteristics (heat insulation), insulation characterisitic (insulation), wetting ability (hydrophilic), hydrophobicity (hydrophobic), bioaffinity (bioaffinity), surface color and polish.
Traditionally, the technician often by electroplating (plating), sputter (sputtering), hot dip process methods such as (hot-dipping), forms protective layer on the profile of workpiece.Yet shortcomings such as the protective layer that forms with traditional method usually has that gauge control is not good, surface coverage scarce capacity or compactness extent deficiency.The not good protective layer of this type of quality can't be very helpful in the workpiece lifting in work-ing life.
Summary of the invention
A purpose of the present invention provides a kind of method that forms protective layer on the profile of workpiece, and it utilizes the ald processing procedure to form protective layer.Whereby, can provide the excellent protection effect, strengthen the various characteristics of workpiece, and then promote the work-ing life of workpiece.
The method of a preferred embodiment of the present invention is by an ald (Atomic LayerDeposition; ALD) processing procedure and/or an electricity slurry strengthen ald (plasma-enhanced ALD) processing procedure (or auxiliary ald (plasma-assisted ALD) processing procedure of an electricity slurry); form an inorganic layer (inorganic layer) on the profile of workpiece, wherein said inorganic layer is promptly as described protective layer.
Therefore, method of the present invention is to utilize the ald processing procedure to form protective layer on the profile of workpiece.Whereby; the excellent protection effect can be provided; strengthen the various characteristics of workpiece; for example; erosion resistance (corrosion resistance), abrasion-resistance (erosion resistance), wear resistant (wearresistance), fatigue resistance characteristics such as (fatigue resistance), and then the work-ing life of lifting workpiece.In addition; method of the present invention is formed on the characteristic that protective layer on the profile of workpiece also can change the contour surface of workpiece; for example; characteristics such as insulating characteristics (heat insulation), insulation characterisitic (insulation), wetting ability (hydrophilic), hydrophobicity (hydrophobic), bioaffinity (bioaffinity), surface color and polish; and then make the purposes of workpiece more extensive, and then improve its economic worth.
Description of drawings
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment of the present invention is described in detail below in conjunction with accompanying drawing:
Fig. 1 is the synoptic diagram of the method for a preferred embodiment of the present invention.
Fig. 2 A to Fig. 2 D is the composition of inorganic layer among Fig. 1 and the synopsis of raw material thereof.
Fig. 3 is the polarization curve of three kinds of workpiece.
Embodiment
See also Fig. 1, Fig. 1 is the synoptic diagram of the method for a preferred embodiment of the present invention.The method of a preferred embodiment of the present invention is in order to form protective layer on the profile 12 of workpiece 10.Workpiece 10 can be made by metal and/or alloy.Can be magnesium (Mg), titanium (Ti), aluminium (Al), chromium (Cr), iron (Fe), nickel (Ni), copper (Cu), cobalt (Co), platinum (Pt), palladium (Pd) or gold (Au) in order to the metal of making workpiece 10, but not as limit.Can be magnesium alloy, aluminium alloy, titanium alloy, Chrome metal powder, nickelalloy, copper alloy, cobalt-base alloy, platinum alloy, palldium alloy, iron-nickel alloy, ferroplatinum, magnalium, magnesium lithium alloy, Al-Li alloy, stainless steel, TiNi base memorial alloy, TiNiCu base memorial alloy, CoCrMo, TiAlV, nickel based super alloy, cobalt-base superalloy or iron nickel based super alloy in order to the alloy of making workpiece 10, but not as limit.
As shown in Figure 1, workpiece 10 is inserted design as in the reaction cavity (reaction chamber) 20 of carrying out the ald processing procedure.
Then, by the ald processing procedure, on the profile 12 of workpiece 10, form inorganic layer (inorganiclayer) 14.Described inorganic layer 14 is promptly as the protective layer of workpiece 10.When practical application, also can cooperate the electricity slurry to strengthen ald processing procedure or the auxiliary ald processing procedure of electricity slurry simultaneously, on the profile 12 of workpiece 10, form inorganic layer 14, by the Ionized mode of part material is reduced process temperatures, to improve the quality of processing procedure.It is noted that, the ald processing procedure has another name called atomic shell brilliant (AtomicLayer Epitaxy of heap of stone, ALE) (Atomic Layer ChemicalVapor Deposition, ALCVD), above-mentioned processing procedure is actually with a kind of processing procedure for processing procedure or atomic layer chemical vapor deposition.
In this embodiment, described inorganic layer 14 can be after finishing deposition further carries out anneal (annealing) under the temperature of scope from 100 ℃ to 1500 ℃.
See also Fig. 2 A to Fig. 2 D, Fig. 2 A to Fig. 2 D is the composition of inorganic layer 14 among Fig. 1 and the synopsis of raw material thereof.In this embodiment, the composition of inorganic layer 14 can be Al 2O 3, AlN, AlP, AlAs, Al XTi YO Z, Al XCr YO Z, Al XZr YO Z, Al XHf YO Z, Bi XTi YO Z, BaS, BaTiO 3, CdS, CdSe, CdTe, CaS, CaF 2, CuGaS 2, CoO, Co 3O 4, CeO 2, Cu 2O, CuO, FeO, GaN, GaAs, GaP, Ga 2O 3, GeO 2, HfO 2, Hf 3N 4, HgTe, InP, InAs, In 2O 3, In 2S 3, InN, LaAlO 3, La 2S 3, La 2O 2S, La 2O 3, La 2CoO 3, La 2NiO 3, La 2MnO 3, MoN, Mo 2N, MoO 2, MgO, MnO x, NiO, NbN, Nb 2O 5, PbS, PtO 2, Si 3N 4, SiO 2, SiC, SnO 2, Sb 2O 5, SrO, SrCO 3, SrTiO 3, SrS, SrS 1-XSe X, SrF 2, Ta 2O 5, TaO XN Y, Ta 3N 5, TaN, Ti XZr YO Z, TiO 2, TiN, Ti XSi YN Z, TiHf YO Z, WO 3, W 2N, Y 2O 3, Y 2O 2S, ZnS 1-XSe X, ZnO, ZnS, ZnSe, ZnTe, ZnS 1-XSe X, ZnF 2, ZrO 2, Zr 3N 4, Zr XSi YO ZOr other similar compound, or be the mixture (mixture) of above-claimed cpd, but not as limit.The composition of inorganic layer 14 and the synopsis of raw material thereof are shown in Fig. 2 A to Fig. 2 D.
In the synopsis shown in Fig. 2 A to Fig. 2 D, thd is meant 2,2,6,6 ,-tetramethyl-3,5-heptanediode.Alkaline earths and yttrium thd mixture may comprise neutral addition compound (adduct) or may handle (oligomerized) through the oligomerization of too small degree.In the synopsis shown in Fig. 2 A to Fig. 2 D, acac is meant acetyl acetonate, iPr is meant CH (CH 3) 2, Me is meant CH 3, tBu is meant C (CH 3) 3, apo is meant 2-amino-pent-2-en-4-onato, dmg is meant dimethylglyoximato, (Bu tO) 3SiOH is meant tris (tert-butoxy) silanol (((CH 3) 3CO) 3SiOH), La ( iPrAMD) 3Be meant tris (N, the lanthanum of N '-diisopropylacetamidinato).
As shown in Figure 1, be example to generate the alumina atom layer by the ald processing procedure, the ald processing procedure is described.Reactions steps in the cycle of an ald can be divided into four parts:
1. utilize carrier gas 22 with H 2O molecule 24 imports in the reaction cavity 20, H 2O molecule 24 can be adsorbed on profile 12 surfaces of workpiece 10 after entering reaction cavity 20, in the profile 12 surface adsorption simple layer O-H bonds of workpiece 10.
2. feed carrier gas 22 and utilize Pu (pump) 28 of group the unnecessary H that is not adsorbed on base material 10 2O molecule 24 is taken away.
3. utilize carrier gas 22 that TMA (Trimethylaluminum) molecule 26 is imported in the reaction cavity 20, with the simple layer O-H bond that originally is adsorbed on profile 12 surfaces of workpiece 10, reaction forms the Al-O bond of simple layer on the profile 12 of workpiece 10, and by product is an organic molecule.
4. feed carrier gas 22 and utilize group Pu 28, take away the organic molecule by product that unnecessary TMA molecule 26 and reaction produce.
Wherein carrier gas 22 can adopt highly purified argon gas or nitrogen.More than four steps be called cycle (ALD cycle) of an ald, can on all surfaces of the profile 12 of workpiece 10, the grow up film of single atomic layer level thickness of the cycle of an ald, this characteristic is called " limitting film forming certainly " (self-limiting), this characteristic makes ald on the control film thickness, and precision can reach an atomic shell (one monolayer).Utilize the cycle times of controlling ald can control the thickness of film accurately.
In this preferred embodiment, the process temperatures setting range can be from room temperature to 600 ℃.It should be noted that because process temperatures is lower, can reduce equipment failure and/or damage that high temperature causes, and then improve processing procedure reliability and the appropriate rate of equipment.
The inorganic layer that forms by the ald processing procedure has following advantage:
1. high surface coverage ability.
2. Jing Mi gauge control, precision can reach an atomic shell.
3. fault in material density is low, no hole structure.
4. material growth temperature is lower.
5. the control of material composition accurately.
6. the raw material uniformity coefficient requires low.
7. processing procedure stability and multiplicity are high.
See also Fig. 3, Fig. 3 is the polarization curve of three kinds of workpiece.Workpiece A (not shown), workpiece B (not shown) and workpiece C (not shown) are all the workpiece made from magnesium alloy.Workpiece A has the protective layer of alumina of the 100nm thickness that forms by the ald processing procedure.Workpiece B has the protective layer of alumina of the 50nm thickness that forms by the ald processing procedure.Workpiece C does not have protective layer.As shown in Figure 3, the corrosion potential of workpiece A is greater than the corrosion potential of workpiece B, and the former two's corrosion potential is again greater than the corrosion potential of the workpiece C that does not have protective layer.Moreover the corrosion current of workpiece A is less than the corrosion current of workpiece B, and the former two's corrosion current is again less than the corrosion current of the workpiece C that does not have protective layer.Can judge to have the erosion resistance of the workpiece A and the workpiece B of protective layer of alumina with this, will go up many well than the workpiece C that does not have protective layer.This shows, workpiece to be had the provide protection of certain degree by the protective layer that the ald processing procedure forms.
Compare in prior art, the method for manufacturing workpiece of the present invention is to utilize the ald processing procedure to form protective layer on the profile of workpiece.Advantages such as the protective layer that forms by the ald processing procedure has high surface coverage ability, accurate gauge control, low fault in material density, material composition control accurately, the raw material uniformity coefficient requires low and processing procedure stability and multiplicity be high.Whereby; the excellent protection effect can be provided; strengthen the various characteristics of workpiece; for example; erosion resistance (corrosion resistance), abrasion-resistance (erosion resistance), wear resistant (wear resistance), fatigue resistance characteristics such as (fatigueresistance), and then the work-ing life of lifting workpiece.In addition; the method according to this invention is formed on the characteristic that protective layer on the contour surface of workpiece also can change the contour surface of workpiece; for example; characteristics such as insulating characteristics (heat insulation), insulation characterisitic (insulation), wetting ability (hydrophilic), hydrophobicity (hydrophobic), bioaffinity (bioaffinity), surface color and polish; and then make the purposes of workpiece more extensive, and then improve its economic worth.
Below preferred embodiment of the present invention is specified, but the present invention is not limited to described embodiment, those of ordinary skill in the art also can make all modification that is equal to or replacement under the prerequisite of spirit of the present invention, modification that these are equal to or replacement all are included in the application's claim institute restricted portion.

Claims (12)

1、一种在一工件的一轮廓上形成一保护层的方法，其特征在于，所述工件由至少一金属及/或至少一合金制成，所述方法包含下列步骤：1. A method of forming a protective layer on a contour of a workpiece, characterized in that said workpiece is made of at least one metal and/or at least one alloy, said method comprising the following steps: 通过一原子层沉积制程及/或一电浆增强原子层沉积制程，在所述工件的所述轮廓上形成一无机层，其中所述无机层即作为所述保护层。An inorganic layer is formed on the contour of the workpiece through an atomic layer deposition process and/or a plasma-enhanced atomic layer deposition process, wherein the inorganic layer serves as the protective layer. 2、如权利要求1所述的方法，其特征在于：所述无机层是在范围从室温至600℃中的一制程温度下形成。2. The method of claim 1, wherein the inorganic layer is formed at a process temperature ranging from room temperature to 600°C. 3、如权利要求1所述的方法，其特征在于：所述无机层在完成沉积后进一步在范围从100℃至1500℃中的一温度下进行退火处理。3. The method of claim 1, wherein the inorganic layer is further annealed at a temperature ranging from 100°C to 1500°C after the deposition is completed. 4、如权利要求1所述的方法，其特征在于：所述至少一金属包含选自由镁、钛、铝、铬、铁、镍、铜、钴、铂、钯以及金所组成的一群组中的其中一个。4. The method of claim 1, wherein said at least one metal comprises a metal selected from the group consisting of magnesium, titanium, aluminum, chromium, iron, nickel, copper, cobalt, platinum, palladium, and gold one of them. 5、如权利要求1所述的方法，其特征在于：所述至少一合金包含选自由镁合金、铝合金、钛合金、铬合金、镍合金、铜合金、钴合金、铂合金、钯合金、铁镍合金、铁铂合金、镁铝合金、镁锂合金、铝锂合金、不锈钢、TiNi基记忆合金、TiNiCu基记忆合金、CoCrMo、TiAlV、镍基超合金、钴基超合金以及铁镍基超合金所组成的一群组中的其中一个。5. The method of claim 1, wherein said at least one alloy comprises magnesium alloys, aluminum alloys, titanium alloys, chromium alloys, nickel alloys, copper alloys, cobalt alloys, platinum alloys, palladium alloys, Iron-nickel alloy, iron-platinum alloy, magnesium-aluminum alloy, magnesium-lithium alloy, aluminum-lithium alloy, stainless steel, TiNi-based memory alloy, TiNiCu-based memory alloy, CoCrMo, TiAlV, nickel-based superalloy, cobalt-based superalloy and iron-nickel-based superalloy One of a group of alloys. 6、如权利要求1所述的方法，其特征在于：所述无机层的组成包含选自由Al2O3、AlN、AlP、AlAs、AlXTiYOZ、AlXCrYOZ、AlXZrYOZ、AlXHfYOZ、BiXTiYOz、BaS、BaTiO3、CdS、CdSe、CdTe、CaS、CaF2、CuGaS2、CoO、Co3O4、CeO2、Cu2O、CuO、FeO、GaN、GaAs、GaP、Ga2O3、GeO2、HfO2、Hf3N4、HgTe、InP、InAs、In2O3、In2S3、InN、LaAlO3、La2S3、La2O2S、La2O3、La2CoO3、La2NiO3、La2MnO3、MoN、Mo2N、MoO2、MgO、MnOx、NiO、NbN、Nb2O5、PbS、PtO2、Si3N4、SiO2、SiC、SnO2、Sb2O5、SrO、SrCO3、SrTiO3、SrS、SrS1-XSeX、SrF2、Ta2O5、TaOXNY、Ta3N5、TaN、TiXZrYOZ、TiO2、TiN、TiXSiYNZ、TiHfYOZ、WO3、W2N、Y2O3、Y2O2S、ZnS1-XSeX、ZnO、ZnS、ZnSe、ZnTe、ZnS1-XSeX、ZnF2、ZrO2、Zr3N4以及ZrXSiYOZ所组成的一群组中的至少其中一个。6. The method as claimed in claim 1, characterized in that: the composition of the inorganic layer comprises Al 2 O 3 , AlN, AlP, AlAs, Al X Ti Y O Z , Al X Cr Y O Z , Al X Zr Y O Z , Al X Hf Y O Z , Bi X Ti Y O z , BaS, BaTiO 3 , CdS, CdSe, CdTe, CaS, CaF 2 , CuGaS 2 , CoO, Co 3 O 4 , CeO 2 , Cu 2 O, CuO, FeO, GaN, GaAs, GaP, Ga 2 O 3 , GeO 2 , HfO 2 , Hf 3 N 4 , HgTe, InP, InAs, In 2 O 3 , In 2 S 3 , InN, LaAlO 3 , La 2 S 3 , La 2 O 2 S, La 2 O 3 , La 2 CoO 3 , La 2 NiO 3 , La 2 MnO 3 , MoN, Mo 2 N, MoO 2 , MgO, MnO x , NiO, NbN, Nb 2 O 5 , PbS, PtO 2 , Si 3 N 4 , SiO 2 , SiC, SnO 2 , Sb 2 O 5 , SrO, SrCO 3 , SrTiO 3 , SrS, SrS 1-X Se X , SrF 2 , Ta 2 O 5. TaO X N Y , Ta 3 N 5 , TaN, Ti X Zr Y O Z , TiO 2 , TiN, Ti X Si Y N Z , TiHf Y O Z , WO 3 , W 2 N, Y 2 O 3 , A group consisting of Y 2 O 2 S, ZnS 1-X Se X , ZnO, ZnS, ZnSe, ZnTe, ZnS 1-X Se X , ZnF 2 , ZrO 2 , Zr 3 N 4 and Zr X Si YO Z At least one of the group. 7、一种在一工件的一轮廓上形成一保护层的方法，其特征在于，所述工件由至少一金属及/或至少一合金制成，所述方法包含下列步骤：7. A method for forming a protective layer on a contour of a workpiece, characterized in that said workpiece is made of at least one metal and/or at least one alloy, said method comprising the following steps: 通过一原子层沉积制程及/或一电浆辅助原子层沉积制程，在所述工件的所述轮廓上形成一无机层，其中所述无机层即作为所述保护层。An inorganic layer is formed on the contour of the workpiece through an atomic layer deposition process and/or a plasma-assisted atomic layer deposition process, wherein the inorganic layer serves as the protection layer. 8、如权利要求7所述的方法，其特征在于：所述无机层是在范围从室温至600℃中的一制程温度下形成。8. The method of claim 7, wherein the inorganic layer is formed at a process temperature ranging from room temperature to 600°C. 9、如权利要求7所述的方法，其特征在于：所述无机层在完成沉积后进一步在范围从100℃至1500℃中的一温度下进行退火处理。9. The method of claim 7, wherein the inorganic layer is further annealed at a temperature ranging from 100°C to 1500°C after the deposition is completed. 10、如权利要求7所述的方法，其特征在于：所述至少一金属包含选自由镁、钛、铝、铬、铁、镍、铜、钴、铂、钯以及金所组成的一群组中的其中一个。10. The method of claim 7, wherein said at least one metal comprises a metal selected from the group consisting of magnesium, titanium, aluminum, chromium, iron, nickel, copper, cobalt, platinum, palladium, and gold one of them. 11、如权利要求7所述的方法，其特征在于：所述至少一合金包含选自由镁合金、铝合金、钛合金、铬合金、镍合金、铜合金、钴合金、铂合金、钯合金、铁镍合金、铁铂合金、镁铝合金、镁锂合金、铝锂合金、不锈钢、TiNi基记忆合金、TiNiCu基记忆合金、CoCrMo、TiAlV、镍基超合金、钴基超合金、铁镍基超合金所组成的一群组中的其中一个。11. The method according to claim 7, wherein said at least one alloy comprises magnesium alloys, aluminum alloys, titanium alloys, chromium alloys, nickel alloys, copper alloys, cobalt alloys, platinum alloys, palladium alloys, Iron-nickel alloy, iron-platinum alloy, magnesium-aluminum alloy, magnesium-lithium alloy, aluminum-lithium alloy, stainless steel, TiNi-based memory alloy, TiNiCu-based memory alloy, CoCrMo, TiAlV, nickel-based superalloy, cobalt-based superalloy, iron-nickel-based superalloy One of a group of alloys. 12、如权利要求7所述的方法，其特征在于：所述无机层的组成包含选自由Al2O3、AlN、AlP、AlAs、AlXTiYOZ、AlXCrYOZ、AlXZrYOZ、AlXHfYOZ、BiXTiYOZ、BaS、BaTiO3、CdS、CdSe、CdTe、CaS、CaF2、CuGaS2、CoO、Co3O4、CeO2、Cu2O、CuO、FeO、GaN、GaAs、GaP、Ga2O3、GeO2、HfO2、Hf3N4、HgTe、InP、InAs、In2O3、In2S3、InN、LaAlO3、La2S3、La2O2S、La2O3、La2CoO3、La2NiO3、La2MnO3、MoN、Mo2N、MoO2、MgO、MnOx、NiO、NbN、Nb2O5、PbS、PtO2、Si3N4、SiO2、SiC、SnO2、Sb2O5、SrO、SrCO3、SrTiO3、SrS、SrS1-XSeX、SrF2、Ta2O5、TaOXNY、Ta3N5、TaN、TiXZrYOZ、TiO2、TiN、TiXSiYNZ、TiHfYOZ、WO3、W2N、Y2O3、Y2O2S、ZnS1-XSeX、ZnO、ZnS、ZnSe、ZnTe、ZnS1-XSeX、ZnF2、ZrO2、Zr3N4以及ZrXSiYOZ所组成的一群组中的至少其中一个。12. The method as claimed in claim 7, characterized in that: the composition of the inorganic layer comprises Al 2 O 3 , AlN, AlP, AlAs, Al X Ti Y O Z , Al X Cr Y O Z , Al X Zr Y O Z , Al X Hf Y O Z , Bi X Ti Y O Z , BaS, BaTiO 3 , CdS, CdSe, CdTe, CaS, CaF 2 , CuGaS 2 , CoO, Co 3 O 4 , CeO 2 , Cu 2 O, CuO, FeO, GaN, GaAs, GaP, Ga 2 O 3 , GeO 2 , HfO 2 , Hf 3 N 4 , HgTe, InP, InAs, In 2 O 3 , In 2 S 3 , InN, LaAlO 3 , La 2 S 3 , La 2 O 2 S, La 2 O 3 , La 2 CoO 3 , La 2 NiO 3 , La 2 MnO 3 , MoN, Mo 2 N, MoO 2 , MgO, MnO x , NiO, NbN, Nb 2 O 5 , PbS, PtO 2 , Si 3 N 4 , SiO 2 , SiC, SnO 2 , Sb 2 O 5 , SrO, SrCO 3 , SrTiO 3 , SrS, SrS 1-X Se X , SrF 2 , Ta 2 O 5. TaO X N Y , Ta 3 N 5 , TaN, Ti X Zr Y O Z , TiO 2 , TiN, Ti X Si Y N Z , TiHf Y O Z , WO 3 , W 2 N, Y 2 O 3 , A group consisting of Y 2 O 2 S, ZnS 1-X Se X , ZnO, ZnS, ZnSe, ZnTe, ZnS 1-X Se X , ZnF 2 , ZrO 2 , Zr 3 N 4 and Zr X Si YO Z At least one of the group.
CNA2007101669130A 2007-10-26 2007-10-26 Method for forming protective layer on contour of workpiece Pending CN101418435A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNA2007101669130A CN101418435A (en) 2007-10-26 2007-10-26 Method for forming protective layer on contour of workpiece

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNA2007101669130A CN101418435A (en) 2007-10-26 2007-10-26 Method for forming protective layer on contour of workpiece

Publications (1)

Publication Number Publication Date
CN101418435A true CN101418435A (en) 2009-04-29

Family

ID=40629432

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007101669130A Pending CN101418435A (en) 2007-10-26 2007-10-26 Method for forming protective layer on contour of workpiece

Country Status (1)

Country Link
CN (1) CN101418435A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103205729A (en) * 2012-01-11 2013-07-17 中国科学院微电子研究所 Method for growing gallium nitride film by using ALD (atomic layer deposition) equipment
CN107164744A (en) * 2017-03-20 2017-09-15 南昌大学 A kind of Mg alloy surface anti-corrosion coating preparation method
CN107236878A (en) * 2017-06-23 2017-10-10 巢湖市兰天大诚门窗幕墙有限公司 High-strength aluminum alloy composite gate
CN107254677A (en) * 2017-06-23 2017-10-17 巢湖市兰天大诚门窗幕墙有限公司 A kind of high-strength, antioxidant aluminium alloy compound door processing technology
CN109659375A (en) * 2019-01-31 2019-04-19 中建材蚌埠玻璃工业设计研究院有限公司 A kind of preparation method of biomimetic features hollow Nano silicon dioxide granule antireflective film
CN110230038A (en) * 2016-04-27 2019-09-13 应用材料公司 Method and chamber part
CN113337808A (en) * 2021-05-10 2021-09-03 西安交通大学 Method for strengthening inner and outer surfaces of voltage reduction element with complex structure
US12002657B2 (en) 2017-01-20 2024-06-04 Applied Materials, Inc. Multi-layer plasma resistant coating by atomic layer deposition

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013104200A1 (en) * 2012-01-11 2013-07-18 中国科学院微电子研究所 Method for using ald device to grow gallium nitride film
CN103205729B (en) * 2012-01-11 2015-07-29 中国科学院微电子研究所 Method for growing gallium nitride film by using ALD (atomic layer deposition) equipment
CN103205729A (en) * 2012-01-11 2013-07-17 中国科学院微电子研究所 Method for growing gallium nitride film by using ALD (atomic layer deposition) equipment
US11198936B2 (en) 2016-04-27 2021-12-14 Applied Materials, Inc. Atomic layer deposition of protective coatings for semiconductor process chamber components
US12104246B2 (en) 2016-04-27 2024-10-01 Applied Materials, Inc. Atomic layer deposition of protective coatings for semiconductor process chamber components
US11326253B2 (en) 2016-04-27 2022-05-10 Applied Materials, Inc. Atomic layer deposition of protective coatings for semiconductor process chamber components
CN110230038A (en) * 2016-04-27 2019-09-13 应用材料公司 Method and chamber part
US11198937B2 (en) 2016-04-27 2021-12-14 Applied Materials, Inc. Atomic layer deposition of protective coatings for semiconductor process chamber components
CN110230038B (en) * 2016-04-27 2021-11-19 应用材料公司 Method and chamber component
US12002657B2 (en) 2017-01-20 2024-06-04 Applied Materials, Inc. Multi-layer plasma resistant coating by atomic layer deposition
CN107164744A (en) * 2017-03-20 2017-09-15 南昌大学 A kind of Mg alloy surface anti-corrosion coating preparation method
CN107254677A (en) * 2017-06-23 2017-10-17 巢湖市兰天大诚门窗幕墙有限公司 A kind of high-strength, antioxidant aluminium alloy compound door processing technology
CN107236878A (en) * 2017-06-23 2017-10-10 巢湖市兰天大诚门窗幕墙有限公司 High-strength aluminum alloy composite gate
CN109659375A (en) * 2019-01-31 2019-04-19 中建材蚌埠玻璃工业设计研究院有限公司 A kind of preparation method of biomimetic features hollow Nano silicon dioxide granule antireflective film
CN113337808A (en) * 2021-05-10 2021-09-03 西安交通大学 Method for strengthening inner and outer surfaces of voltage reduction element with complex structure

Similar Documents

Publication Publication Date Title
CN101418435A (en) Method for forming protective layer on contour of workpiece
US11098403B2 (en) High entropy alloy thin film coating and method for preparing the same
US20080254231A1 (en) Method of forming protection layer on contour of workpiece
US4943486A (en) Coated article and method of production
JP2007521401A (en) Stainless steel strip with decorative layer
CN114402413B (en) Protective multilayer coating for process chamber components
CN105463388B (en) Alumina series composite coating, the gradient ultra-fine cemented carbide cutter with the composite coating and preparation method thereof
CN104220634B (en) Coloured hard decorative component
US9469765B2 (en) Golden rigid decorative member
EP3214627B1 (en) Superconducting wire material substrate and method for manufacturing same, and superconducting wire material
CN109072405B (en) Decorative member and method for manufacturing same
US20080292873A1 (en) Method for Providing a Thermal Barrier Coating and Substrate Having Such Coating
JP2019035133A (en) Black member, method for manufacturing the same, and clock including black member
EP1726682A1 (en) Coating comprising layered structures of diamond like nanocomposite layers and diamond like carbon layers.
KR101621642B1 (en) Textured substrate for epitaxial film formation, and method for manufacturing the same
JP3638332B2 (en) Coated hard alloy
JPH11314966A (en) Zirconia-base article, method for using same as wear resistant outer part of wristwatch and its production
US12006577B2 (en) Method for protection against corrosion
CN114807849A (en) A kind of nanocomposite high entropy nitride coating and composite deposition method thereof
KR20000035885A (en) Corrosion-resistant permanent magnet and method for manufacturing the same
CN113278859B (en) Hard alloy with long service life
KR20190076474A (en) Stainless colored substrate having excellent wear resistance and colorstrength, and color development method of stainless steel substrate therefor
KR20230097289A (en) Implementation technology of single phase color alloys and grain size control technology for alloy properties
TWI663122B (en) Optical film, optical film assembly and method of manufacturing same
WO2015016098A1 (en) Oriented substrate for use in formation of epitaxial film, and method for producing same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20090429