CN101418189A - Polishing fluid of metal copper - Google Patents
Polishing fluid of metal copper Download PDFInfo
- Publication number
- CN101418189A CN101418189A CNA2007100474652A CN200710047465A CN101418189A CN 101418189 A CN101418189 A CN 101418189A CN A2007100474652 A CNA2007100474652 A CN A2007100474652A CN 200710047465 A CN200710047465 A CN 200710047465A CN 101418189 A CN101418189 A CN 101418189A
- Authority
- CN
- China
- Prior art keywords
- polishing fluid
- polishing
- amino
- carboxyl
- triazole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 81
- 239000010949 copper Substances 0.000 title claims abstract description 46
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 21
- 239000012530 fluid Substances 0.000 title claims description 49
- 229910052751 metal Inorganic materials 0.000 title abstract description 5
- 239000002184 metal Substances 0.000 title abstract description 5
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims abstract description 15
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 11
- 239000008139 complexing agent Substances 0.000 claims abstract description 11
- 150000003852 triazoles Chemical class 0.000 claims abstract description 11
- -1 triazoles compound Chemical class 0.000 claims abstract description 8
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 5
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000003082 abrasive agent Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 239000004342 Benzoyl peroxide Substances 0.000 claims description 2
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 claims description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 2
- SIOXPEMLGUPBBT-UHFFFAOYSA-N Picolinic acid Natural products OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- OUUQCZGPVNCOIJ-UHFFFAOYSA-M Superoxide Chemical compound [O-][O] OUUQCZGPVNCOIJ-UHFFFAOYSA-M 0.000 claims description 2
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 claims description 2
- 235000019400 benzoyl peroxide Nutrition 0.000 claims description 2
- 239000001177 diphosphate Substances 0.000 claims description 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims description 2
- ZZYXNRREDYWPLN-UHFFFAOYSA-N pyridine-2,3-diamine Chemical compound NC1=CC=CN=C1N ZZYXNRREDYWPLN-UHFFFAOYSA-N 0.000 claims description 2
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical group C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 claims description 2
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical group C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims 1
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 claims 1
- 150000002978 peroxides Chemical class 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 abstract description 9
- 238000012876 topography Methods 0.000 abstract description 6
- 230000035945 sensitivity Effects 0.000 abstract description 3
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 abstract 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 10
- 239000000126 substance Substances 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 239000013543 active substance Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- SNTWKPAKVQFCCF-UHFFFAOYSA-N 2,3-dihydro-1h-triazole Chemical compound N1NC=CN1 SNTWKPAKVQFCCF-UHFFFAOYSA-N 0.000 description 1
- MVRGLMCHDCMPKD-UHFFFAOYSA-N 3-amino-1h-1,2,4-triazole-5-carboxylic acid Chemical class NC1=NNC(C(O)=O)=N1 MVRGLMCHDCMPKD-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007521 mechanical polishing technique Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a polishing solution for metal copper, which is characterized by comprising an abrading agent, an oxidizer, water and one or more of the following complexing agents: triazole, triazoles compound of which the carbon atom has amino and/or carboxyl, organic phosphonic acid provided with carboxyl, amino or sulfonic group, and pyridine ring provided with amino or carboxyl. Cu removing rate of the polishing solution has low sensitivity to change of down force. After the polishing solution is adopted for polishing, the copper has bright and clean surface and good surface topography.
Description
Technical field
The present invention relates to a kind of polishing fluid, be specifically related to the polishing fluid of a kind of polishing metal copper.
Background technology
In the semiconductor technology processing procedure below 130nm, metallic copper has been widely used as the interconnection line material.The chemically machinery polished of Cu interconnection line is the technology of widespread use in the global planarization technology now.Different processing procedures has different technical requirementss to the polishing speed of copper.The removal speed that copper is regulated in the optimization of adopting process condition is industry method commonly used.The existing different polishing fluid prescription of a lot of bibliographical informations is recently regulated the surface topography of Cu and is removed speed to reach different selections.For example:
The polishing fluid that patent documentation US 6217416B1 adopts abrasive silica particle, heterogeneous ring compound, oxygenant and organic acid to form, the removal rate selection that has obtained different Cu/Ta recently adapts to the polishing requirement of different steps.
The polishing fluid that patent documentation US 6568997B2 adopts polymer abrasive grain, unsaturated carboxylic acid polymer, membrane-forming agent, complexing agent and other additive to form carries out the polishing of copper interconnecting line.
Patent documentation US7138073B2 adopts the polishing fluid of compound complex agent, tensio-active agent and the silica abrasive granulometric composition of different ratios to carry out the polishing of Cu device.
In the CMP (Chemical Mechanical Polishing) process of Cu, divide two stages: remove stage and landing stage (as shown in Figure 1) fast.Damascus technics is exactly the diffusion impervious layer (the modern tantalum/tantalum nitride that belongs to) that deposits a kind of about 100～250A earlier in groove, and the copper crystal seed of growing then is that plated metal copper is with trench fill at last.Form the copper-connection circuit through CMP, polishing is at first to be the most metallic copper that goes to structure top fast, and then reduces polishing speed and reach processing requirement to guarantee surface topography, grinds off remaining copper and stops at the blocking layer, no metal residual.So the glossing in these two stage employings is different.
In CMP (Chemical Mechanical Polishing) process, the sensitivity that the removal speed of Cu changes overdraft is the focus that industry is paid close attention to always.Especially in the processing procedure below 90nm, adopt the relatively low low-k materials of physical strength, therefore required chemically machinery polished under lower overdraft, to carry out.Should guarantee the mechanical integrity of low-k materials, the first throwing to Cu has higher removal speed again, and this is one of challenge that is faced in the Cu chemical Mechanical Polishing Technique.Relevant bibliographical information is also rare.
Summary of the invention
Technical problem to be solved by this invention is for the requirement to the polishing speed of Cu of the processing procedure that adapts to different CMP (Chemical Mechanical Polishing) process and stage, and the lower polishing fluid of susceptibility that provides the removal speed of a kind of Cu that overdraft is changed.
Polishing fluid of the present invention contains: one or more in abrasive material, oxygenant, water and the following complexing agent: triazole, the triazole class compounds of band amino and/or carboxyl on the carbon atom, hydroxyl, amino or sulfonic organic phospho acid, and the nitrogen-containing heterocycle compound of band amino or carboxyl.
Wherein, when described complexing agent is selected triazole for use, the triazole class compounds of band amino and/or carboxyl on the carbon atom, and it is hydroxyl, during amino or sulfonic organic phospho acid, polishing fluid of the present invention is except low to the overdraft change sensitivity, under lower overdraft, also have higher Cu and remove speed, especially be fit to the polishing of the low low-k materials insulation layer of physical strength, promptly remove the stage fast, concrete preferred substance is 1,2, the 4-1H triazole, 3-amino-1,2, the 4-triazole, 5-carboxyl-3-amino-1,2,4 triazoles, hydroxy ethylidene-diphosphate, in Amino Trimethylene Phosphonic Acid and the organophosphorus sulfonic acid one or more.
Wherein, when described complexing agent is selected the pyridine ring of band amino or carboxyl for use, it is not only insensitive to the variation of overdraft that the Cu that polishing fluid of the present invention has removes speed, and it is lower, be fit to the polishing of the second step landing stage, concrete preferred substance is 2-pyridine carboxylic acid and/or 2,3 diamino pyridine.
Wherein, what the content of described complexing agent was preferable is mass percent 0.1～5%, and better is mass percent 0.2～3%.
Wherein, described abrasive material can select for use this area to use abrasive material always, as SiO
2And Al
2O
3Deng.What the content of described abrasive material was preferable is mass percent 0.1～20%.
Wherein, described oxygenant is preferable is selected from organic or inorganic superoxide and/or persulfide, preferred hydrogen peroxide, persulphate and benzoyl peroxide; What the content of described oxygenant was preferable is mass percent 0.1～10%.
Polishing fluid of the present invention also can contain this area conventional additives, as membrane-forming agent, tensio-active agent and sterilant etc.
What the pH value of polishing fluid of the present invention was preferable is 1～7, and better is 2～5.
Polishing fluid of the present invention is by the simple uniform mixing of above-mentioned each composition, and adopting the pH regulator agent to be adjusted to suitable pH value afterwards can make.The pH regulator agent can be selected the conventional pH regulator agent in this area for use, as potassium hydroxide, ammoniacal liquor and nitric acid etc.Agents useful for same of the present invention and raw material are all commercially available to be got.
Positive progressive effect of the present invention is: the removal speed of the Cu that polishing fluid of the present invention has is lower to the susceptibility that overdraft changes.After adopting polishing fluid polishing of the present invention, copper surface smoother, surface topography is better.Wherein, select triazole for use, the triazole class compounds of band amino and/or carboxyl on the carbon atom, and/or the polishing fluid of the present invention of hydroxyl, amino or sulfonic organic phospho acid, under lower overdraft, have higher Cu and remove speed, especially be fit to the polishing of the low low-k materials insulation layer of physical strength.It is not only insensitive to the variation of overdraft that the Cu that selects for use the polishing fluid of the present invention of the pyridine ring of band amino or carboxyl to have removes speed, and lower, is fit to the polishing of the second step landing stage.
Description of drawings
Fig. 1 is the synoptic diagram in two stages in the CMP (Chemical Mechanical Polishing) process of Cu.
Fig. 2 removes the speed comparison diagram for the Cu that polishing fluid 1～5 among the effect embodiment polishes under overdraft 1psi and 3psi.
Fig. 3 is for adopting the photo figure on the preceding copper surface of polishing fluid 1 polishing among the effect embodiment.
Fig. 4 is for adopting the photo figure on copper surface, polishing fluid 1 polishing back among the effect embodiment.
Fig. 5 is for adopting the photo figure on copper surface, polishing fluid 3 polishing back among the effect embodiment
Embodiment
Mode below by embodiment further specifies the present invention, but does not therefore limit the present invention among the described scope of embodiments.
Table 1 has provided polishing fluid embodiment 1～9 of the present invention, and by prescription is with the simple uniform mixing of each composition in the table, surplus is a water, and adopting pH regulator agent such as potassium hydroxide, ammoniacal liquor and nitric acid to be adjusted to suitable pH value afterwards can make.
Table 1 polishing fluid embodiment 1～9 of the present invention
Effect embodiment
Table 2 has provided polishing fluid 1～5 of the present invention, and with the simple uniform mixing of each composition, by prescription is with the simple uniform mixing of each composition in the table, surplus is a water by prescription in the table, and being adjusted to suitable pH value with nitric acid afterwards can make.
Table 2 polishing fluid 1～5 of the present invention
Adopt above-mentioned polishing fluid 1～5, adopt overdraft 1psi and 3psi to polish respectively to Cu, other polishing conditions are: polishing pad: Politex 14 '; Rotating speed: polishing disk/rubbing head=70/90rpm; Polishing fluid flow velocity: 100ml/min; Polishing time: 2min.The removal speed of Cu such as table 3 and shown in Figure 2.
The Cu that table 3 polishing fluid 1～5 polishes under overdraft 1psi and 3psi removes speed
| Polishing fluid | Cu removes speed (A/min) under the 1psi | Cu removes speed (A/min) under the 3psi | RR
3psi/ |
| 1 | 4459 | 5061 | 1.1 |
| 2 | 4356 | 6243 | 1.4 |
| 3 | 2036 | 3010 | 1.5 |
| 4 | 1086 | 1801 | 1.7 |
| 5 | 4271 | 7159 | 1.7 |
| 6 | 3825 | 4187 | 1.1 |
| 7 | 3587 | 4125 | 1.2 |
| 8 | 4025 | 4487 | 1.1 |
By table 3 data as seen, polishing fluid of the present invention is lower to the susceptibility that overdraft changes to the removal speed of the Cu that has.
With polishing fluid 1 is example, and the surface picture figure of (the polishing overdraft is 1psi) respectively as shown in Figure 3 and Figure 4 before and after Cu was polished.By Fig. 3 and 4 contrasts as seen, adopt polishing fluid of the present invention polishing after, the surperficial smoother of copper, surface topography is better.The photo figure on (polishing overdraft is 1psi) copper surface, polishing fluid 3 polishing back as shown in Figure 5, as seen from the figure, the surperficial smoother of copper, surface topography is better.
Claims (12)
1. the polishing fluid of a metallic copper, it is characterized in that containing: one or more in abrasive material, oxygenant, water and the following complexing agent: triazole, the triazole class compounds of band amino and/or carboxyl on the carbon atom, hydroxyl, amino or sulfonic organic phospho acid, and the pyridine ring of band amino or carboxyl.
2. polishing fluid as claimed in claim 1, it is characterized in that: described complexing agent is selected from 1,2,4-1H triazole, 3-amino-1,2,4-triazole, 5-carboxyl-3-amino-1,2, one or more in 4 triazoles, hydroxy ethylidene-diphosphate, Amino Trimethylene Phosphonic Acid and the organophosphorus sulfonic acid.
3. polishing fluid as claimed in claim 1 is characterized in that: described complexing agent is selected from 2-pyridine carboxylic acid and/or 2,3 diamino pyridine.
4. polishing fluid as claimed in claim 1 is characterized in that: the content of described complexing agent is mass percent 0.1～5%.
5. polishing fluid as claimed in claim 4 is characterized in that: the content of described complexing agent is mass percent 0.2～3%.
6. polishing fluid as claimed in claim 1 is characterized in that: described abrasive material is SiO
2Or Al
2O
3
7. polishing fluid as claimed in claim 1 is characterized in that: the content of described abrasive material is mass percent 0.1～20%.
8. polishing fluid as claimed in claim 1 is characterized in that: described oxygenant is selected from organic or inorganic superoxide and/or persulfide.
9. polishing fluid as claimed in claim 8 is characterized in that: described organo-peroxide is a benzoyl peroxide; Described inorganic peroxide is a hydrogen peroxide; Described inorganic persulfide is a persulphate.
10. polishing fluid as claimed in claim 1 is characterized in that: the content of described oxygenant is mass percent 0.1～10%.
11. polishing fluid as claimed in claim 1 is characterized in that: the pH value of described polishing fluid is 1～7.
12. polishing fluid as claimed in claim 11 is characterized in that: the pH value of described polishing fluid is 2～5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710047465 CN101418189B (en) | 2007-10-26 | 2007-10-26 | Polishing fluid of metal copper |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710047465 CN101418189B (en) | 2007-10-26 | 2007-10-26 | Polishing fluid of metal copper |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101418189A true CN101418189A (en) | 2009-04-29 |
| CN101418189B CN101418189B (en) | 2013-10-02 |
Family
ID=40629198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200710047465 Active CN101418189B (en) | 2007-10-26 | 2007-10-26 | Polishing fluid of metal copper |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101418189B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102373014A (en) * | 2010-08-24 | 2012-03-14 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing solution |
| EP2693460A4 (en) * | 2011-03-30 | 2015-07-15 | Fujimi Inc | Polishing composition, polishing method using same, and method for producing semiconductor device |
| CN111378377A (en) * | 2018-12-29 | 2020-07-07 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution and application thereof |
| CN111423618A (en) * | 2020-05-20 | 2020-07-17 | 中国科学技术大学 | Nitrogen heterocyclic aromatic amine-metal ion complex flame retardant and application thereof in preparation of flame-retardant epoxy resin |
| WO2022121816A1 (en) * | 2020-12-11 | 2022-06-16 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution and use method therefor |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050097825A1 (en) * | 2003-11-06 | 2005-05-12 | Jinru Bian | Compositions and methods for a barrier removal |
| JP3892846B2 (en) * | 2003-11-27 | 2007-03-14 | 株式会社東芝 | CMP slurry, polishing method, and semiconductor device manufacturing method |
| CN1955239A (en) * | 2005-10-28 | 2007-05-02 | 安集微电子（上海）有限公司 | Chemical mechanical polishing material of copper |
-
2007
- 2007-10-26 CN CN 200710047465 patent/CN101418189B/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102373014A (en) * | 2010-08-24 | 2012-03-14 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing solution |
| EP2693460A4 (en) * | 2011-03-30 | 2015-07-15 | Fujimi Inc | Polishing composition, polishing method using same, and method for producing semiconductor device |
| US9150758B2 (en) | 2011-03-30 | 2015-10-06 | Fujimi Incorporated | Polishing composition, polishing method using same, and method for producing semiconductor device |
| CN111378377A (en) * | 2018-12-29 | 2020-07-07 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution and application thereof |
| TWI842803B (en) * | 2018-12-29 | 2024-05-21 | 大陸商安集微電子(上海)有限公司 | Chemical-mechanical polishing slurry and its using method |
| CN111423618A (en) * | 2020-05-20 | 2020-07-17 | 中国科学技术大学 | Nitrogen heterocyclic aromatic amine-metal ion complex flame retardant and application thereof in preparation of flame-retardant epoxy resin |
| CN111423618B (en) * | 2020-05-20 | 2021-07-06 | 中国科学技术大学 | A nitrogen heterocyclic aromatic amine-metal ion complex flame retardant and its application in the preparation of flame retardant epoxy resin |
| WO2022121816A1 (en) * | 2020-12-11 | 2022-06-16 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution and use method therefor |
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