CN101414570B - Semiconductor process method and semiconductor device system - Google Patents

Abstract

A semiconductor process and a semiconductor device system are provided. The semiconductor process at least comprises a first high temperature furnace process and a second high temperature furnace process. The method is to perform a first high temperature furnace process on a first boat loaded with at least one chip. Then, the second wafer boat loaded with the chip is processed by a second high temperature furnace tube process. And before the second high-temperature furnace tube process, a moving step is carried out to ensure that the relative positions of the chips on the first wafer boat and the chips on the second wafer boat are different.

Description

Semiconductor process method and semiconductor device system

technical field

The present invention relates to an integrated circuit process and device, and in particular to a semiconductor process method and a semiconductor device system including a furnace tube process and furnace tube equipment.

Background technique

In the integrated circuit process, many steps must be carried out in a high temperature environment, such as the thermal diffusion process for doping ions, the thermal oxidation process for growing oxide layers, and the elimination of defects. Annealing (annealing) process.

In the above heat treatment method, generally, the wafer is placed in a boat and sent into a furnace for reaction, and taken out after the reaction is completed. In addition, when the next furnace tube process is performed, the same lot of chips placed on the wafer boat is sent into the furnace tube for reaction again, and taken out after the reaction is completed.

Generally speaking, the inside of the wafer boat will be divided into grid-by-grid areas (chip slots) to load multiple chips, and each chip slot is formed by configuring three crossbars (pins) on the horizontal plane of the wafer boat body. form. In detail, the chips are in direct contact with the crossbars of the wafer boat, and the chips are fixedly placed in the chip slots of the wafer boat by being supported by these crossbars. However, after the high-temperature furnace tube process, the area on the chip in contact with the wafer boat will be damaged. For example, material defects such as dislocation and slip may be caused on the chip. In particular, since the area on the chip that is in contact with the wafer boat is the same in different furnace tube processes, the damage on the chip will be affected by the high temperature and become more serious after multiple high temperature furnace tube processes. In this way, the stability of the subsequent process will be greatly reduced, and even the reliability and yield of products and components will be seriously affected.

Contents of the invention

In view of this, the purpose of the present invention is to provide a semiconductor process method, which can avoid serious damage to the chip caused by multiple high-temperature furnace tube processes and affect the stability and reliability of subsequent processes.

Another object of the present invention is to provide a semiconductor device system that can solve the problem of severe damage to chips caused by multiple high-temperature furnace tube processes, and improve the stability of subsequent processes and the reliability and yield of components.

The invention provides a semiconductor process method. The semiconductor process at least includes a first high temperature furnace tube process and a second high temperature furnace tube process. In this method, a first high-temperature furnace tube process is performed on a first crystal boat loaded with at least one chip. Then, a second high-temperature furnace tube process is performed on the second crystal boat loaded with chips. Moreover, before performing the second high-temperature furnace tube process, a first moving step is performed to make the relative positions of the chip on the first wafer boat different from that of the chip on the second wafer boat.

According to the semiconductor process method described in the embodiment of the present invention, the above-mentioned first moving step is to use a robot arm to rotate the chip by an angle on the same horizontal plane.

According to the semiconductor processing method described in the embodiment of the present invention, the above-mentioned first moving step is to use a positioning device in the furnace tube machine to change the relative positions of the chips on the first wafer boat and the second wafer boat.

According to the semiconductor process method described in the embodiment of the present invention, the above-mentioned first moving step is to change the relative positions of the chips on the first wafer boat and the second wafer boat by rotating the wafer boat.

According to the semiconductor processing method described in the embodiment of the present invention, the process temperature of the above-mentioned first high-temperature furnace tube process and the second high-temperature furnace tube process is greater than or equal to 900°C.

According to the semiconductor processing method described in the embodiment of the present invention, after the first high-temperature furnace tube process and before the first moving step, at least one low-temperature furnace tube process is performed.

According to the semiconductor processing method described in the embodiment of the present invention, the above-mentioned first wafer boat includes a wafer boat body, and a support portion is disposed on each horizontal plane of the wafer boat body. Wherein, the supporting part is, for example, a plurality of cross bars, an annular partition with one side open, or an annular partition with one side open and at least one opening on the surface. Moreover, the material of the first boat is, for example, quartz, silicon carbide or other suitable materials. In one embodiment, the second wafer boat is the same wafer boat or a different wafer boat from the first wafer boat.

According to the semiconductor process method described in the embodiment of the present invention, before the above-mentioned first moving step, a step of measuring the curvature of the chip is further included, and the relative displacement of the chip is determined by the measured value obtained.

According to the semiconductor processing method described in the embodiment of the present invention, after the second high-temperature furnace tube process, it also includes performing a third high-temperature furnace tube process on a third crystal boat loaded with chips, and performing the third high-temperature furnace tube process. Before the furnace tube process, a second moving step is performed to make the relative positions of the chips on the first crystal boat, the second crystal boat and the third crystal boat different. Wherein, the second moving step is the same as or different from the first moving step. In addition, after the second high-temperature furnace tube process and before the second moving step, at least one low-temperature furnace tube process is further included. Moreover, the process temperature of the third high-temperature furnace tube process is greater than or equal to 900°C. The third wafer boat and the second wafer boat are the same wafer boat or different wafer boats. In one embodiment, before performing the second moving step, a step of measuring the curvature of the chip is further included, and the relative displacement of the chip is determined by the measured value obtained.

The present invention further provides a semiconductor device system, which includes at least one furnace tube equipment and a mobile control station. Wherein, the furnace tube equipment is used for high temperature furnace tube process, and the furnace tube equipment includes a wafer boat for loading at least one chip. The mobile control station is coupled with the furnace tube equipment, so that the relative positions of the chip and the crystal boat are different when different high-temperature furnace tube processes are performed.

The semiconductor device system according to the embodiment of the present invention further includes a chip curvature measurement station, coupled with the furnace tube equipment and the mobile control station, for determining the relative displacement of the chip by the obtained measurement value.

According to the semiconductor device system described in the embodiment of the present invention, the above-mentioned mobile control station uses a robot arm to rotate the chip at an angle on the same horizontal plane.

According to the semiconductor device system described in the embodiment of the present invention, the above-mentioned mobile control station uses a positioning device to change the relative position of the chips on the wafer boat.

According to the semiconductor device system described in the embodiment of the present invention, the mobile control station uses rotating the wafer boat to change the relative position of the chips on the wafer boat.

According to the semiconductor device system described in the embodiment of the present invention, the process temperature of the above-mentioned high temperature furnace tube process is greater than or equal to 900°C.

According to the semiconductor device system described in the embodiment of the present invention, the above-mentioned wafer boat includes a wafer boat body, and a support portion is disposed on each horizontal plane of the wafer boat body. Wherein, the supporting part is, for example, a plurality of cross bars, an annular partition with one side open, or an annular partition with one side open and at least one opening on the surface. Moreover, the material of the boat is, for example, quartz, silicon carbide or other suitable materials.

The device system of the present invention adds an additional mobile control station to change the relative position of the chip and the wafer boat, so as to prevent the damage on the chip from being more serious due to multiple high-temperature furnace tube processes, thereby affecting the stability and reliability of the subsequent process. In addition, the device system of the present invention may further include a chip curvature measurement station, so as to use the measured value obtained to determine the relative displacement of the chip to improve process stability and reliability. On the other hand, the method of the present invention is to change the relative position of the chip and the wafer boat before the next high-temperature furnace tube process, so as to avoid more serious damage on the chip caused by the previous high-temperature furnace tube process. Moreover, the method of the present invention also includes using the step of measuring the curvature of the chip before changing the relative position of the chip and the boat, and determining the relative displacement of the chip according to the measured value, so that the reliability and yield of the process can be further improved.

In order to make the above and other objects, features and advantages of the present invention more comprehensible, preferred embodiments will be described in detail below together with the accompanying drawings.

Description of drawings

FIG. 1 is a schematic configuration diagram of a semiconductor device system according to an embodiment of the present invention.

FIG. 2A is a schematic cross-sectional view illustrating a wafer boat.

FIG. 2B is a schematic top view showing the crystal boat

FIG. 2C , FIG. 2D , and FIG. 2E are schematic diagrams illustrating separators of the wafer boat.

FIG. 3 is a flow chart of steps of a semiconductor process method according to an embodiment of the present invention.

FIG. 4A is a schematic top view showing the crossbars of the chip and the wafer boat before the moving step.

FIG. 4B is a schematic top view illustrating the crossbars of the chips and boats after the first moving step.

FIG. 4C is a schematic top view illustrating the crossbars of the chip and the boat after the second moving step.

Description of main component symbols

100: Semiconductor device system

110: furnace tube equipment

120: Mobile Control Site

130: Chip curvature measurement site

201, 402: chip

202: crystal boat body

203, 404: cross bar

204: support part

206, 208: clapboard

207: opening

310, 303, 305, 320, 330, 333, 335, 340, 350: steps

Detailed ways

FIG. 1 is a schematic configuration diagram of a semiconductor device system according to an embodiment of the present invention.

Referring to FIG. 1 , a semiconductor device system 100 includes at least one furnace tube equipment 110 for performing a high temperature furnace tube process. The so-called "high temperature furnace tube process" herein refers to a furnace tube process with a process temperature greater than or equal to 900°C. The semiconductor device system 100 of this embodiment has, for example, two furnace tube equipment 110 , namely the furnace tube equipment (A) and the furnace tube equipment (B). However, the present invention does not specifically limit the number of furnace tube equipment, which can be adjusted according to process requirements. The furnace tube device 110 is mainly composed of a wafer boat for loading chips and a furnace tube for placing the wafer boat therein. In addition, the furnace tube equipment usually includes temperature controllers, gas delivery pipelines and other components. The configuration and combination of the furnace tube equipment in the general semiconductor process are well known to those skilled in the art, and will not be repeated here. The furnace tube equipment 110 of this embodiment may be, for example, an oxidation diffusion high temperature furnace, a low pressure chemical vapor deposition furnace, or other furnace tube equipment used in general semiconductor processes.

It should be noted that, as shown in FIG. 2A , the wafer boat of the furnace equipment 110 may be, for example, a wafer boat used in a general semiconductor process. The crystal boat includes a crystal boat body 202, and each horizontal surface of the crystal boat body 202 is configured with a support portion 204 in contact with the chip, which separates the crystal boat body 202 into a plurality of chip grooves, so that the chip 201 can be placed on it . As mentioned above, the support portion 204 disposed on each horizontal plane of the wafer boat body 202 is composed of, for example, three cross-bars (pins) (shown as 203 in FIG. 2B ) or a plurality of cross-bars. Certainly, the wafer boat of the furnace tube equipment 110 is not limited thereto, and the support portion 204 formed by a plurality of cross bars can also be replaced by a circular partition 206 with one side open (that is, approximately U-shaped or horseshoe-shaped) (as shown in FIG. 2C ). ), or a partition 208 with an opening 207 (as shown in FIG. 2D and FIG. 2E ). As mentioned above, the material of the wafer boat (including the wafer boat body 202 and the support portion 204 ) of the furnace tube device 110 is, for example, quartz, silicon carbide (SiC) or other suitable materials.

In addition, the semiconductor device system 100 also includes a mobile control station 120 . The mobile control station 120 is coupled with the furnace tube equipment 110, and its function is to make the relative positions of the chip and the crystal boat different when performing different high-temperature furnace tube processes. In detail, after the second high-temperature furnace tube process is completed in the furnace tube equipment, before the next high-temperature furnace tube process is performed, the mobile control station 120 can be entered to change the relative position of the chip on the wafer boat, so that the chip can be placed in the first time. The damage caused in the high temperature furnace tube process will not be more serious due to the next high temperature furnace tube process.

Based on the above, the mobile control station 120, for example, uses a robot arm to rotate the chips in the wafer boat by an angle on the same horizontal plane, so as to change the relative positions of the chips and the wafer boat. Alternatively, at the mobile control station 120, a positioning device is used to make the relative positions of the chips on the wafer boat different. In addition, the purpose of changing the relative positions of the chip and the wafer boat can also be achieved by using the way of rotating the wafer boat. Of course, those skilled in the art can also change the relative positions of chips and wafer boats in the mobile control station according to the spirit of the present invention and the teachings of the foregoing embodiments according to their needs.

Because the known process technology will cause damage to the area on the chip that is in direct contact with the boat, especially after multiple high-temperature furnace tube processes, the damage will be more serious. Therefore, adding an extra mobile control station 120 in the semiconductor device system 100 can avoid the problem of conventional chips being damaged, which affects the stability of subsequent processes and the reliability and yield of components.

Please continue to refer to FIG. 1 , in another embodiment, the semiconductor device system 100 further includes a chip curvature measurement station 130 . The chip curvature measurement station 130 is coupled with the furnace tube equipment 110 and the mobile control station 120, and is used to determine the relative displacement of the chip by the obtained chip curvature measurement value. The above-mentioned method of determining the relative displacement of the chip by using the measured value of the chip curvature, for example, after measuring the chip curvature at the chip curvature measuring station 130, enters the mobile control station 120, and uses the obtained measured value of the chip curvature to make the relative displacement on the chip The unrecessed area is moved onto the support of the wafer boat. Moderately adjusting the relative displacement between the chip and the boat according to the chip curvature measurement value can further make the chip have higher process stability and reliability in the subsequent process. Therefore, not only can the serious damage problem of the chip caused by multiple high-temperature furnace tube processes be avoided, but the newly added chip curvature measurement station 130 can also improve process stability and reliability.

Hereinafter, the furnace tube process method will be described using the semiconductor device system of this embodiment. FIG. 3 is a flow chart of steps of a semiconductor process method according to an embodiment of the present invention. In the following embodiments, the furnace tube equipment (A) 110 and the furnace tube equipment (B) 110 shown in FIG. 1 are used as equipment for performing high temperature furnace tube process for illustration.

Please refer to FIG. 1 and FIG. 3 at the same time, perform the first high-temperature furnace tube process (step 310 ), and the process temperature of the first high-temperature furnace tube process is greater than or equal to 900° C. The step of performing the first high-temperature furnace tube process is, for example, sending the wafer boat loaded with at least one chip to the furnace tube equipment (A) 110 , and performing the furnace tube process after adjusting relevant parameters. In this embodiment, a wafer boat used in a general semiconductor process is used to illustrate the placement relationship between chips and wafer boats. As shown in FIG. 4A , it shows a schematic top view of the chip 402 and the bar 404 of the wafer boat. Of course, the present invention is not limited to the use of conventional wafer boats. Other embodiments of the wafer boats have been described in detail above and will not be repeated here.

Next, a first moving step (step 320 ) is performed to make the relative positions of the chips on the wafer boat different. The first moving step is, for example, to enter the mobile control station 120 after completing the first high-temperature furnace tube process, use the mechanical arm to clamp the chip out from the wafer boat, and rotate the chip at an angle on the same horizontal plane, and then insert it into the same One wafer boat or another wafer boat, in order to change the relative position of chip and wafer boat. In addition, other embodiments of changing the relative positions of the chip and the wafer boat are also described in the above-mentioned embodiments, which will not be repeated here. As shown in FIG. 4B , it shows a schematic top view of the chip 402 and the bar 404 of the boat after the first moving step. Wherein, the dotted line part (---) refers to the position of the bar 404 of the wafer boat on the chip 402 before the first moving step.

Then, a second high-temperature furnace tube process is performed (step 330 ), and the process temperature of the second high-temperature furnace tube process is greater than or equal to 900° C. The step of carrying out the second high-temperature furnace tube process, for example, the wafer boat whose relative position between the chip and the wafer boat has been changed is sent from the mobile control station 120 to the furnace tube equipment (B) 110, and the furnace tube process is carried out after adjusting relevant parameters .

In one embodiment, at least one low temperature furnace tube process (step 303 ) may be performed after the first high temperature furnace tube process (step 310 ) and before the second high temperature furnace tube process (step 330 ). Because, the problem of damage on the chip is only aggravated by the high temperature. Therefore, before performing the low-temperature furnace tube process, there is no need to perform the step of changing the relative position of the chip and the crystal boat.

Because, the step of changing the relative position of the chip and the crystal boat will be carried out before the high-temperature furnace tube process is carried out. That is to say, in each high-temperature furnace tube process, the area where the chip and the boat are in direct contact is not the same. Therefore, it can be avoided that the damage condition of a specific area on the chip is continuously enhanced by multiple high-temperature furnace tube processes.

In addition, please continue to refer to FIG. 1 and FIG. 3 at the same time. In one embodiment, before performing the first moving step (step 320), a chip curvature measurement step (step 305) may be performed first, and the obtained chip Curvature measurements are used to determine the relative displacement of the chip. The chip curvature measurement step is, for example, before entering the mobile control station 120, first enter the chip curvature measurement station 130, use the method for measuring chip curvature in the general semiconductor process to measure, and then according to the chip curvature measurement value, at the mobile control station 120 Adjust the relative position of the chip and wafer boat. The above method of measuring the curvature of the chip is well known to those skilled in the art, and will not be repeated here.

Next, please continue to refer to Fig. 3, after carrying out the second high temperature furnace tube process (step 330), can continue to carry out the 3rd high temperature furnace tube process (step 350), the process temperature of this 3rd high temperature furnace tube process is greater than or Equal to 900°C. However, before performing the third high-temperature furnace tube process (step 350), the second moving step (step 340) needs to be carried out earlier, so that the relative positions of the chip on the wafer boat are different, so as to avoid the damage problem on the chip from being more serious. Reduce the stability of subsequent processes and component reliability. As shown in FIG. 4C , it shows a schematic top view of the chip 402 and the bar 404 of the boat after the second moving step. Wherein, the dotted line part (---) refers to the position of the crossbar 404 of the crystal boat on the chip 402 before the first moving step, and the chain line part (-·-·-) refers to the position of the wafer boat after the first moving step. The position of the bar 404 on the chip 402 .

Likewise, at least one low-temperature furnace tube process (step 333 ) may be performed after the second high-temperature furnace tube process (step 330 ) and before the third high-temperature furnace tube process (step 350 ). In addition, in one embodiment, before performing the second moving step (step 340), a chip curvature measurement step (step 335) can be performed first, and the relative displacement of the chip can be determined by the obtained chip curvature measurement value quantity.

To sum up, the present invention can change the relative position of the chip and the wafer boat before the next high-temperature furnace tube process, so as to avoid more serious damage on the chip caused by the previous high-temperature furnace tube process. In addition, the present invention can also determine the relative displacement of the chip by measuring the curvature of the chip, so as to further improve the reliability and yield of the process.

Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Anyone skilled in the art can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, this The scope of protection of the invention should be defined by the claims.

Claims (22)

1. semiconductor technology method, this semiconductor technology comprises one first high-temperature furnace tube process and one second high-temperature furnace tube process at least, and this method comprises:

The first brilliant boat that is mounted with at least one chip is carried out this first high-temperature furnace tube process; And

The second brilliant boat that is mounted with this chip is carried out this second high-temperature furnace tube process,

And before carrying out this second high-temperature furnace tube process, carry out first and move step, make this chip different on this first brilliant boat with the relative position of this chip on this second brilliant boat,

Wherein the technological temperature of this first high-temperature furnace tube process and this second high-temperature furnace tube process is more than or equal to 900 ℃.

2. semiconductor technology method as claimed in claim 1, wherein this first moves step for utilizing a mechanical arm, makes this chip rotate an angle on same horizontal plane.

3. semiconductor technology method as claimed in claim 1, wherein this first to move step be the positioner that utilizes in the boiler tube board, change the relative position of this chip on this first brilliant boat and this second brilliant boat.

4. semiconductor technology method as claimed in claim 1, wherein this first moves step and changes the relative position of this chip on this first brilliant boat and this second brilliant boat for utilize rotating brilliant boat.

5. semiconductor technology method as claimed in claim 1, wherein after this first high-temperature furnace tube process, and this first moves before the step, also comprises and carries out at least one low temperature oven plumber's skill.

6. semiconductor technology method as claimed in claim 1, wherein this first brilliant boat comprises a brilliant boat body, and disposes a support portion at each horizontal plane of this crystalline substance boat body,

This support portion comprises a plurality of cross bars, has the toroidal membrane of a side for opening, or has a side for opening and surperficial toroidal membrane with at least one opening.

7. semiconductor technology method as claimed in claim 1, wherein the material of this first brilliant boat comprises quartz or carborundum.

8. semiconductor technology method as claimed in claim 1, wherein this second brilliant boat and this first brilliant boat are same brilliant boat or are not same brilliant boat.

9. semiconductor technology method as claimed in claim 1 wherein carries out this and first moves before the step, also comprises and carries out a chip curvature measurement step, and determine the relative shift of this chip by the measured value that obtains.

10. semiconductor technology method as claimed in claim 1, wherein after this second high-temperature furnace tube process, comprise that more one the 3rd brilliant boat to being mounted with this chip carries out one the 3rd high-temperature furnace tube process, and before carrying out the 3rd high-temperature furnace tube process, carry out one second and move step, make this chip different with the relative position on the 3rd brilliant boat at this first brilliant boat, this second brilliant boat.

11. semiconductor technology method as claimed in claim 10, wherein this second moves step and this first to move step identical or different.

12. semiconductor technology method as claimed in claim 10, wherein after this second high-temperature furnace tube process, and this second moves before the step, also comprises and carries out at least one low temperature oven plumber's skill.

13. semiconductor technology method as claimed in claim 10, wherein the technological temperature of the 3rd high-temperature furnace tube process is more than or equal to 900 ℃.

14. semiconductor technology method as claimed in claim 10, wherein the 3rd brilliant boat and this second brilliant boat are same brilliant boat or are not same brilliant boat.

15. semiconductor technology method as claimed in claim 10 wherein carries out this and second moves before the step, also comprises and carries out a chip curvature measurement step, and determine the relative shift of this chip by the measured value that obtains.

16. a semiconductor device system comprises:

At least one boiler tube equipment, in order to carry out high-temperature furnace tube process, this boiler tube equipment comprises a brilliant boat, in order to load at least one chip; And

One moves the control website, be coupled with this boiler tube equipment, and with so that when carrying out different high-temperature furnace tube process, this chip is different with the relative position of this crystalline substance boat,

Wherein the technological temperature of this high-temperature furnace tube process is more than or equal to 900 ℃.

17. semiconductor device system as claimed in claim 16 also comprises a chip curvature measurement website, with this boiler tube equipment, this moves the control website and be coupled, in order to determine the relative shift of this chip by the measured value that obtains.

18. semiconductor device system as claimed in claim 16 wherein should move the control website for utilizing a mechanical arm, made this chip rotate an angle on same horizontal plane.

19. semiconductor device system as claimed in claim 16 wherein should move the control website for utilizing a location device, changed the relative position of this chip on this crystalline substance boat.

20. semiconductor device system as claimed in claim 16, wherein being somebody's turn to do and moving the control website is to utilize the brilliant boat of rotation to change the relative position of this chip on this crystalline substance boat.

21. semiconductor device system as claimed in claim 16 wherein should comprise a brilliant boat body by the crystalline substance boat, and dispose a support portion at each horizontal plane of this crystalline substance boat body,

This support portion comprises a plurality of cross bars, has the toroidal membrane of a side for opening, or has a side for opening and surperficial toroidal membrane with at least one opening.

22. semiconductor device system as claimed in claim 16, material that wherein should the crystalline substance boat comprises quartz or carborundum.

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