CN101398401B - Physical quantity sensor and method for manufacturing the same - Google Patents
Physical quantity sensor and method for manufacturing the same Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title description 26
- 239000000758 substrate Substances 0.000 claims abstract description 230
- 238000001514 detection method Methods 0.000 claims abstract description 20
- 230000001939 inductive effect Effects 0.000 claims description 123
- 239000000463 material Substances 0.000 claims description 36
- 238000007639 printing Methods 0.000 claims description 33
- 239000006071 cream Substances 0.000 claims description 32
- 238000002360 preparation method Methods 0.000 claims description 14
- 239000004642 Polyimide Substances 0.000 claims description 12
- 229920001721 polyimide Polymers 0.000 claims description 12
- 230000004807 localization Effects 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 20
- 230000008859 change Effects 0.000 abstract description 15
- 239000004020 conductor Substances 0.000 abstract description 13
- 239000003990 capacitor Substances 0.000 description 125
- 239000004065 semiconductor Substances 0.000 description 108
- 238000003860 storage Methods 0.000 description 37
- 229910052581 Si3N4 Inorganic materials 0.000 description 27
- 238000009413 insulation Methods 0.000 description 27
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 27
- 238000012360 testing method Methods 0.000 description 20
- 238000007493 shaping process Methods 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 229910052814 silicon oxide Inorganic materials 0.000 description 15
- 229910052782 aluminium Inorganic materials 0.000 description 14
- 238000005452 bending Methods 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 238000009434 installation Methods 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 239000004411 aluminium Substances 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 230000001681 protective effect Effects 0.000 description 11
- 230000008878 coupling Effects 0.000 description 10
- 238000010168 coupling process Methods 0.000 description 10
- 238000005859 coupling reaction Methods 0.000 description 10
- 239000010410 layer Substances 0.000 description 10
- 238000012545 processing Methods 0.000 description 9
- 230000004044 response Effects 0.000 description 9
- 230000014509 gene expression Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 238000013459 approach Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 230000004224 protection Effects 0.000 description 5
- 230000003321 amplification Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000839 emulsion Substances 0.000 description 4
- 239000008393 encapsulating agent Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 239000007767 bonding agent Substances 0.000 description 3
- 229920002301 cellulose acetate Polymers 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 150000003949 imides Chemical class 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000005435 mesosphere Substances 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 229920005575 poly(amic acid) Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 229910000984 420 stainless steel Inorganic materials 0.000 description 1
- 208000034189 Sclerosis Diseases 0.000 description 1
- 230000009102 absorption Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
A capacitance type humidity sensor includes: a detection substrate including a detection portion on a first side of the detection substrate; and a circuit board including a circuit portion. The detection portion detects humidity on the basis of capacitance change of the detection portion. The circuit portion processes the capacitance change as an electric signal. The detection substrate further includes a sensor pad on a second side of the detection substrate. The sensor pad is electrically connected to the detection portion through a conductor in a through hole of the detection substrate.
Description
The application is that 200510099914.9 application is female case with the application number of submitting on September 8th, 2005, and the denomination of invention of this mother's case application is " physical quantity transducer and a manufacturing approach thereof ".
Technical field
The method that the present invention relates to a kind of physical quantity transducer and be used to make this physical quantity transducer.
Background technology
Through the humidity inductive film being inserted a kind of conventional capacitor type humidity sensor of making between the pair of electrodes as physical quantity transducer, wherein the relative dielectric constant of humidity inductive film changes along with humidity.For example, such sensor is disclosed among the Japanese publication application No.2002-243690, itself and US6, and 580,600 is corresponding with US2002-0114125A1.
The capacitor type humidity sensor is made in the following manner; Form pair of electrodes so that make this be separated from each other and be positioned at relative to one another on the same plane of Semiconductor substrate, and forming the humidity inductive film on the Semiconductor substrate so that make the humidity inductive film be covered with this to electrode and this is to the space between the electrode to electrode.The relative dielectric constant of humidity inductive film changes along with humidity.In addition, when insulation film (second insulation film) has been formed between electrode and the humidity inductive film, can fix through this insulation film about the humidity inductive characteristic of electrode.Therefore, even the special expensive metal noble metal for example with good anti humility performance that uses, these electrodes still can use the material that can be used for the normal semiconductor production line, and for example aluminium (being Al) is made.
In addition, be used to handle capacitance variations between the electrode so that obtain the side that is formed with electrode that the circuit unit (circuit component unit) of electric signal is provided in the Semiconductor substrate plane.If employed wiring material is identical with the structured material of electrode in this circuit, so just can be so that the manufacturing step simplification.
On the other hand; In having the capacitor type humidity sensor of said structure; For the pad that can play the external connection terminals effect (that is, anticorrosion) of protecting the marginal portion that is provided in circuit unit at least, so the surface of these pads must be covered by the protective material of example gel or the like.
Yet electrode and circuit unit are formed on the same planar side of Semiconductor substrate according to integration mode.In addition, the local coating gel is especially difficult.Therefore, the whole surface that forms the circuit on Semiconductor substrate plane is covered by gel, and the top of the detecting unit of being processed by electrode and humidity inductive film also covers by gel, thereby makes the response characteristic deterioration of capacitor type humidity sensor.
In addition, except said structure, known another kind has the capacitor type humidity sensor of said structure.In other words; When the check-out console with detecting unit that its electric capacity changes because of humidity with have circuit unit to circuit board when separately preparing, the sensor mat that is electrically connected on the electrode through closing line or the like just is electrically connected on the circuit unit in this capacitor type humidity sensor.Yet, equally in this case because the sensor mat of check-out console must be capped, so the top of humidity inductive film and electrode just cover by gel, thereby make the response characteristic deterioration of capacitor type humidity sensor.
Above-mentioned capacitor type humidity sensor is made in such a way; Form pair of electrodes so that make this be separated from each other and be positioned at relative to one another on the same plane of Semiconductor substrate, and forming the humidity inductive film on the Semiconductor substrate so that make the humidity inductive film be covered with this to electrode and this is to the space between the electrode to electrode.The relative dielectric constant of humidity inductive film changes along with humidity.
In this case; In the manufacture process of above-mentioned capacitor type humidity sensor; If the cream that comprises with structured material corresponding polymer material is the serigraphy formula; And subsequently printing paste is hardened so that form the humidity formed film, so just can eliminate the pattern that utilizes optical processing required when using rotary coating method and form processing.In other words, manufacturing step is able to simplify.In addition, the existence equipment that makes can easy-to-handle another kind of advantage.
On the other hand, in the serigraphy operation, owing to cream is printed on the substrate through the pattern hole that is formed in the screen mask, so must make screen mask accurately locate with respect to substrate.In addition, in above-mentioned capacitor type humidity sensor, because the especially requirement of the compactedness of sensor arrangement,, guarantee that therefore screen mask necessarily accurately locatees with respect to substrate so the humidity inductive film must have high position precision.
For this reason, generally, for example, when screen mask during with respect to substrate orientation, screen mask just is abutted against with model substrate (substrate that promptly is used for test objective) and cream is the serigraphy formula.So, the location situation of the Printing Zone of having printed through pattern hole just can through use imaging device for example the CCD camera detect.So, just with substrate orientation on a stage, so that Printing Zone of being detected and zone to be printed can become roughly the same position.Under the situation of this location, can carry out printing operation.
Yet, under the situation of serigraphy operation, make the humidity inductive film thickness evenly just difficult especially.This reason is by due to the what is called that for example betides the marginarium " saddle type " phenomenon.Therefore, in order to make the effective coverage of the roughly uniform core of film thickness (it is centered on by the edge part branch) be arranged in this zone on the substrate to be printed, pattern hole is set for greater than zone to be printed.In addition, under the situation of serigraphy operation, the seal cream because extrudate is slided is so the shape and/or the area in actual print zone (humidity inductive film) more or less are different from pattern hole.In other words, the zone on the substrate to be printed is with the shape in the zone of actual print and/or size have more different on the model substrate.Like this, though substrate is positioned operation simultaneously will be Printing Zone during as reference area, also have the problem that can not form the humidity inductive film with high position precision.
Above-mentioned capacitor type humidity sensor is made through comprising with lower component: comprise Semiconductor substrate; Be formed at first insulation film on the Semiconductor substrate; Pair of electrodes; Form second insulation film according to the mode that makes second insulation film be covered with pair of electrodes; And electrode and this mode to the space between the electrode are formed at the capacitor type humidity sensor on the Semiconductor substrate according to making the humidity inductive film be covered with this.Pair of electrodes has been formed at according to making these paired electrodes be positioned at the mode on the same plane relative to one another respectively in first insulation.Therefore, when the humidity inductive film that changes along with humidity when its relative dielectric constant has inserted between the paired electrode, just can detect humidity according to the variation in the relative dielectric constant of humidity inductive film.
Conventional capacitor type humidity sensor is provided with in the following manner, and the detecting unit that is become with the humidity inductive film configuration by electrode is formed on the rigid substrate, for example Semiconductor substrate and glass substrate.
Therefore; When above-mentioned capacitor type humidity sensor directly is arranged on the installation unit with plane of bending; Because this conventional capacitor type humidity sensor contacts with installation unit is local, so when external force puts on this sensor, will there be the risk that makes the humidity sensor fracture.For example, conventional capacitor type humidity sensor is arranged on the windshield of vehicle so that be used to the automatic control operation of automatic air regulating system, its with the mist formation phenomenon that can prevent vehicle windscreen as one of purpose.
In addition, can conceive this sensor structure is set.In other words, conventional capacitor type humidity sensor is arranged on the installation unit through buffer component, and this buffer component has consistent with the curved surface that the unit is installed and curved surface that form.Be provided with in the structure at this sensor, the structure that comprises the sensor of buffer component becomes big.Therefore, especially when humidity sensor is installed on the windshield, thereby the visual field that this humidity sensor just maybe the interfere with vehicles passenger produces unfavorable result.
In this case, conventional capacitor type humidity sensor has been set in the flat unit (for example buffer board), and this flat unit separates with the installation unit with plane of bending.Therefore, just possibly produce error more or less with respect to reality part to be measured.
Usually, mainly have two kinds of dissimilar humidity sensors, resistance type humidity sensor and capacitor type humidity sensor.In view of these conventional type humidity sensors, the inventor Primary Study the capacitor type humidity sensor as having the prototype of structure shown in Figure 16.
The cross-section structure of this capacitance type transducers has been shown among Figure 16.Shown in this secondary figure, insulation film J2 is formed at the front of Semiconductor substrate J1, and divides a plurality of electrode J4 that open also to be formed at its front by a plurality of groove J3.The inside of a plurality of groove J3 is carried out filling by humidity inductive material J6 through being formed at the positive insulation film J5 of these a plurality of electrode J6.
In having the humidity sensor of said structure, because the specific inductive capacity " ε " of each humidity inductive member changes with the humidity in the atmosphere, so the electric capacity that is formed among these a plurality of electrode J4 also can change.Therefore, this humidity sensor can detect according to the situation of change in response to the electric signal of capacitance variations.For example, these contents are disclosed among the Japanese publication application No.2002-243689, itself and US6, and 445,565-B1 is corresponding.
In having the humidity sensor of said structure, output is exported thereby make these electric signal outputs become simulating signal in response to the electric signal of formed electric capacity among a plurality of electrode J4.Therefore, the simulation of humidity sensor output must convert numeral output to.For this reason, just need A/D converter.Therefore, the problem of existence is exactly that the circuit of humidity sensor is provided with structure and becomes complicated, thereby just makes that humidity sensor can not compact conformation.
Should be appreciated that be that instance is described, but similar problem can betide in the sensing equipment that uses above-mentioned mode of operation, for example infrared sensor, pressure transducer with the humidity sensor.
Summary of the invention
In view of the above problems, an object of the present invention is to provide a kind of capacitor type humidity sensor that can prevent that response characteristic from reducing, a kind of method that is used to make above-mentioned capacitor type humidity sensor is provided simultaneously.
In addition, another object of the present invention provide a kind of can be with the method for printing screen of higher positioning accuracy printing.
In addition, another object of the present invention provides a kind of digital sensor that can produce and exports the sensing equipment that the while does not need A/D converter.
The capacitor type humidity sensor comprises: detect substrate, it comprises the test section that places on detection substrate first side; The circuit board that comprises circuit part.The test section is according to the capacitance variations of test section and humidity is detected.Circuit part is treated to electric signal with the capacitance variations of test section.The test section is electrically connected on the circuit part.Detect substrate and also comprise the sensor mat that places with on relative detection substrate second side of first side that detects substrate.Sensor mat is as the used splicing ear of circuit part.Sensor mat is electrically connected on the test section through the conductor that is arranged in the through hole that detects substrate.
In the sensor, the test section is formed on the different plates with circuit part, thereby makes the test section not have the diaphragm example gel.Like this, reporting situations of humidity is able to improve.
Preferably, sensor also comprises containment member.Circuit board also comprises first pad as the splicing ear that is used for sensor mat.First pad places on first side of circuit board.First pad is electrically connected on the circuit part.Detect substrate and circuit board according to making the mode of first side contacts of second side and circuit board of detection substrate pile up.Sensor mat is electrically connected on first pad through connecting elements.Containment member is between second side of annular and first side that places circuit board and detection substrate, thereby makes containment member seal the sensor mat and first pad.In this case, can prevent the coupling part between corroding electrode and the circuit part, i.e. sensor mat, first pad and connecting elements.In addition, can reduce the size of sensor.
Preferably, the test section comprises a pair of comb electrodes and humidity inductive film.Detecting substrate is processed by Semiconductor substrate.Comb electrodes is interlaced with each other so that make comb electrodes spaced a predetermined distance from.The humidity inductive film is covered with the space between comb electrodes and this comb electrodes.In this case, the relative area of comb electrodes increases.Like this, the capacitance variations between the electrode just increases.In addition, substrate can be processed by glass substrate or Semiconductor substrate.Through using Semiconductor substrate, just can utilize the conventional type semiconductor technology to make sensor.Like this, just reduced the manufacturing cost of sensor.
Preferably, the humidity inductive film can change the relative permittivity of humidity inductive film according to the humidity in the atmosphere.Circuit board has flexible so that make circuit board to be out of shape according to the curvature of mounting portion.Sensor is installed on the mounting portion so that make second side of circuit board contact with the mounting portion.Second side of circuit board is relative with first side of circuit board, and wherein first side is to detecting substrate.More preferably, circuit part is treated to electric signal with the capacitance variations between the comb electrodes.
In addition, a kind of method that is used to make the capacitor type humidity sensor is provided.This method may further comprise the steps: preparation detects substrate, and it comprises the test section that places on detection substrate first side; Preparation comprises the circuit board of circuit part; And between test section and circuit part, be electrically connected.The test section can change the electric capacity of test section according to the humidity in the atmosphere.Circuit part is treated to electric signal with the capacitance variations of test section.The step of preparation detection substrate is included in to detect on substrate second side and forms sensor mat.Second side that detects substrate is relative with first side that detects substrate.Sensor mat is as the used splicing ear of circuit part.Sensor mat is electrically connected on the test section through the conductor that is arranged in the through hole that detects substrate.
In the sensor of being made by said method, the test section is formed on the different plates with circuit part, thereby makes the test section not have the diaphragm example gel.Like this, reporting situations of humidity just is able to improve.
Preferably, the step of preparation circuit board is included in and forms first pad on the circuit board as the step that is used for the splicing ear of sensor mat.First pad places on first side of circuit board.First pad is electrically connected on the circuit part.The step that is electrically connected may further comprise the steps: according to making second side that detects substrate pile up detection substrate and circuit board with the mode of first side contacts of circuit board; Through connecting elements sensor mat with first the pad between be electrically connected; Utilization places first side of circuit board and the containment member that detects between second side of substrate seals, thereby makes containment member seal the coupling part between sensor mat fills up with first.Containment member is an annular.
In addition, provide a kind of pattern hole that serigraphy cream is applied to the method on the substrate through screen mask being applied on the substrate and through screen mask.This method may further comprise the steps: the preparation standard pattern hole is used as the localization criteria between screen mask and substrate in screen mask; On substrate, form the location pattern; Through screen mask being applied on the model substrate and cream is printed on the model substrate, thereby standard pattern is printed on the model pattern through the standard pattern hole; The location situation of standard pattern on the detection model substrate; Make substrate orientation according to the position of location pattern on the substrate and the corresponding to mode in position that detects detected standard pattern in the step; And in positioning step, make under the situation of substrate orientation through screen mask being applied to make on the substrate that cream is printed on the substrate.The location pattern has and standard pattern shape much at one.Location pattern on the substrate forms according to the positioning relation between standard pattern hole and this pattern hole.In this case, substrate and screen mask can be with hi-Fixs.
Preferably, the location pattern comprises a plurality of location pattern parts that are spaced apart at a predetermined distance from each other.More preferably, the location pattern part that is arranged on the substrate sandwiches the zone on the substrate.In the step of printing cream, cream is printed in the zone of substrate through pattern hole.
Preferably, substrate comprises a pair of electrode that intermeshes.Cream comprises the polymeric material of humidity inductive film.Pattern hole forms according to the corresponding mode in humidity inductive film zone to be formed on pattern hole and the substrate that makes.Humidity inductive film zone to be formed is covered with electrode and distance between electrodes.More preferably, the location pattern on the substrate is provided by the part that is not covered by the humidity inductive film.
In addition, be used for comprising: demoder according to the sensing equipment that generates output as the physical quantity that detects target; And the Semiconductor substrate that comprises a plurality of storage unit, wherein each unit comprises transistor and the capacitor that is used for switch.Transistor in each storage unit comprises source region, drain region and gate electrode.Source region and drain region are first conduction type.Gate electrode places on the Semiconductor substrate through grid insulating film according to the mode that makes gate electrode sandwich between source region and the drain region.Capacitor in each storage unit comprises groove, semiconductor region, dielectric film and capacitance electrode.Groove places Semiconductor substrate.Semiconductor region with first conduction type places groove and is connected on the source region.Dielectric film can change the specific inductive capacity of dielectric film according to the situation of physical quantity.Dielectric film embeds the semiconductor region of groove according to making dielectric film place the lip-deep mode of semiconductor region.Capacitance electrode places on the surface of dielectric film through insulation film according to the mode that makes capacitance electrode towards groove.Groove in each storage unit has aperture area all inequality in each storage unit.Demoder is in write state to storage unit or is in not that the state of each storage unit of write state detects, and according to the state output signal output of storer.
In the said equipment, because the aperture area of each groove is different, so it is also just different to write the physical quantity of each storage unit.Like this, physical quantity obtains with regard to can be used as numerical value.Therefore, sensor device is not having to produce digital sensing output under the situation of A/D converter.
Preferably, the width of groove has nothing in common with each other in each storage unit in each storage unit, thereby makes the aperture area of groove in each storage unit, have nothing in common with each other.More preferably, the width of groove can be through carrying out secondary to preset width or N power obtains in each storage unit, and wherein N represents natural number.
In addition, be used for comprising: demoder according to the sensing equipment that generates output as the physical quantity that detects target; And the Semiconductor substrate that comprises a plurality of storage unit, wherein each unit comprises transistor and the capacitor that is used for switch.Transistor comprises source region, drain region and gate electrode.Source region and drain region are first conduction type.Gate electrode places on the Semiconductor substrate through grid insulating film according to the mode that makes gate electrode sandwich between source region and the drain region.Capacitor comprises a pair of comb electrodes and dielectric film.Comb electrodes places on the Semiconductor substrate.Dielectric film can change the specific inductive capacity of dielectric film according to the situation of physical quantity.Space between the dielectric film filling comb electrodes.Comb electrodes is spaced from each other.The distance of a pair of comb electrodes in each storage unit has nothing in common with each other in each storage unit.Demoder is in write state to storage unit or is in not that the state of each storage unit of write state detects, and according to the state output signal output of storer.
In the said equipment, because the distance between electrodes in each storage unit is different, so the physical quantity that is write in each storage unit is also different.Like this, physical quantity obtains with regard to can be used as numerical value.Therefore, sensor device is not having to produce digital sensing output under the situation of A/D converter.
Description of drawings
Through reading the following detailed description of carrying out, will more know above-mentioned and other purpose of the present invention, feature and advantage referring to accompanying drawing.
Figure 1A is the planimetric map that shows according to the capacitor type humidity sensor of first embodiment of the invention, and Figure 1B is the cut-open view that shows the sensor of cutting open along the line IB-IB among Figure 1A;
Fig. 2 A is the cut-open view of explanation in the detection substrate preparation process of the method that is used for making sensor, and Fig. 2 B is the cut-open view of the circuit board manufacture process in the illustration method, and Fig. 2 C is the cut-open view of the connection procedure in the illustration method, all according to first embodiment;
Fig. 3 is the cut-open view that shows the capacitor type humidity sensor according to the modification of first embodiment;
Fig. 4 A is the planimetric map that shows according to the capacitor type humidity sensor of second embodiment of the invention; Fig. 4 B is the cut-open view that shows the sensor of cutting open along the line IVB-IVB among Fig. 4 A;
Fig. 5 A is the cut-open view of explanation in the electrode forming process of the method that is used for making sensor, and Fig. 5 B is the cut-open view of the printing process in the illustration method, and Fig. 5 C is the cut-open view of the film shaped process of humidity inductive in the illustration method, all according to second embodiment;
Fig. 6 is the planimetric map according to the control methods that is used to locate of the contrast scheme of second embodiment;
Fig. 7 A to 7C is the planimetric map that shows standard pattern hole and location pattern according to second embodiment;
Fig. 8 A is the cut-open view that the print steps that in printing process, the model substrate is printed has been described; Fig. 8 B is the cut-open view that the position probing step that in printing process, standard is detected has been described; Fig. 8 C is the cut-open view that the positioning step that in printing process, Semiconductor substrate is positioned has been described; Fig. 8 D is the cut-open view that the print steps that Semiconductor substrate is printed has been described, all according to second embodiment;
Fig. 9 A and 9B are the planimetric map that shows according to the standard pattern hole of the modification of second embodiment;
Figure 10 A is the planimetric map that shows according to the capacitor type humidity sensor of third embodiment of the invention; Figure 10 B is the cut-open view that shows the sensor of cutting open along the line XB-XB among Figure 10 A;
Figure 11 A is the perspective schematic view that shows the installment state that is installed on the sensor on the vehicle windscreen; Figure 11 B is the local amplification view that shows the sensor among Figure 11 A, all according to the 3rd embodiment;
Figure 12 is the local amplification view of sensing part that shows the humidity sensor of a fourth embodiment in accordance with the invention;
Figure 13 is the equivalent circuit diagram that shows according to one of storage unit in the sensing part of the 4th embodiment;
Figure 14 is the schematic circuit that shows according to the humidity sensor of the 4th embodiment;
Figure 15 is the planimetric map that shows according to the sensing part deployment scenarios of the humidity sensor of fifth embodiment of the invention; And
Figure 16 is the local amplification view as the humidity sensor sensing part of prototype that shows according to the contrast scheme of the 4th embodiment.
Embodiment
(first embodiment)
Figure 1A and 1B are the sketch that is used to schematically show according to the structure of the capacitor type humidity sensor 300 of the first embodiment pattern; Figure 1A is the planimetric map that is used to represent this capacitor type humidity sensor 300; And Figure 1B is the cut-open view that shows the humidity sensor of cutting open along the line IB-IB among Figure 1A.Should be understood that for simplicity, in Figure 1A, the pair of electrodes that is positioned under the humidity inductive film and second insulation film is illustrated according to the transmission of electricity pattern.
Shown in Figure 1A and 1B, capacitor type humidity sensor 300 is configured to by check-out console 100 and circuit board 200.The detecting unit that its electric capacity changes along with humidity is provided on the side on a plane of check-out console 100.The circuit unit that is used for the variation of processing and detecting cell capacitance is provided in circuit board 200.
At first, check-out console 100 is described.Reference number 110 shows the Semiconductor substrate as substrate, and Semiconductor substrate 110 is processed by silicon in this first embodiment pattern.Subsequently, pair of electrodes 131 and 132 forms through the silicon oxide film 120 as insulation film.Electrode 131 and 132 set-up mode make these electrodes 131 and 132 separate each other and are positioned at relative to one another on the same plane on the silicon oxide film 120.
Although the shape to electrode 131 and 132 is not done concrete restriction; But in this first embodiment pattern; Shown in Figure 1A, respective electrode 131 and 132 is configured to by common electrode part 131a and 132a and a plurality of broach shape electrode part 131b and 132b (three electrode parts are arranged among Fig. 1).These a plurality of broach shape electrode part 131b and 132b extend along a direction respectively from common electrode part 131a and 132a.So, pair of electrodes 131 and 132 is arranged so that the broach shape electrode part 131b and the 132b arrangement alternate with each other of pair of electrodes 131 and 132.As noted earlier because broach shape shape is used as the shape of pair of electrodes 131 and 132, and can be so that the area that is provided with of electrode 131 and 132 diminishes, so just can so that broach shape electrode part 131b and 132b be disposed opposite to each other in these areas changes greatly.Therefore, the variable quantity of the electrostatic capacitance between the electrode 131 and 132 that changes along with the humidity variation of its peripheral part increases, thereby just can improve the sensitivity of capacitor type humidity sensor 300.
With regard to electrode 131 and 132, can use wiring material for example Al, Ag, Au, Cu, Ti, Poly-Si or the like.Yet; Because it is higher and in semiconductor processes, constitute pollution source to have noble metal (Au an or the like) cost of anticorrosion properties with respect to moisture; So in the first embodiment pattern; These electrodes 131 and 132 can use aluminium (being Al) to make, and aluminium electrode cost is low and can in semiconductor processes, make.
Therefore, in the first embodiment pattern, silicon nitride film 140 forms diaphragm on Semiconductor substrate 110, so that make this silicon nitride film 140 be covered with these paired electrodes 131 and 132.Therefore, can suppress by the caused corrosion of moisture these electrodes 131 and 132.
Be formed on the silicon nitride film 140 by having the made humidity inductive film 150 of hygroscopic polymeric material, so that make this humidity inductive film 150 be covered with the space between a pair of and these electrodes 131 and 132 in these electrodes 131 and 132.Can use polymeric material, polyimide, butyric acid/cellulose acetate or the like.In the first embodiment pattern, humidity inductive film 150 forms through using polyimide.Paired electrode 131 and 132 constitutes detecting unit with humidity inductive film 150.Should be appreciated that in Figure 1A the zone of humidity inductive film 150 in this formation represented in the rectangular area that dotted line centered on.
In addition, shown in Figure 1A, electronic pads 131c and 132c are formed at the marginal portion of electrode 131 and 132.So through hole 160 just is formed in Semiconductor substrate 110 and the silicon oxide film 120, simultaneously electronic pads 131c and 132c are used as the bottom.Electronic pads 131c and 132c are formed at through the conductors 161 in the through hole 160 on the back side of Semiconductor substrate 110 of electrode 131 and 132. Electronic pads 131c and 132c are electrically connected on the sensor mat 162, and it is with the splicing ear of the circuit unit that acts on CC plate 200.This connector pad 162 is exposed so that be connected on the circuit unit of CC plate 200.As for the structured material of conductor 161, if this conductor 161 can be arranged in the through hole 160, so to this just not concrete restriction.In the first embodiment pattern, this conductor 161 uses aluminium to form through the mode that is similar in first embodiment pattern electrode 131 and 132.Should be pointed out that reference number 163 expression insulation courses.
Next, circuit board 200 is described.In Figure 1B, reference number 210 shows the Semiconductor substrate as substrate.In the first embodiment pattern, Semiconductor substrate 210 is processed by silicon.Subsequently, circuit unit 230 is formed on the front of Semiconductor substrate 210.Sort circuit unit 230 (for example, comprising the C-V converting unit that is used for electric capacity is converted to voltage) is handled so that obtain electric signal the capacitance variations that is limited between electrode 131 and 132.This circuit unit 230 is configured to by for example CMOS transistor or the like.In the first embodiment pattern, for for purpose of brevity, only represented the wiring portion in the circuit unit 230, this wiring portion is processed by Al and is formed on the Semiconductor substrate 210 through the silicon oxide film 220 as insulation film simultaneously.
In addition, first pad 231 forms splicing ear on silicon oxide film 220.First pad 231 is connected on the circuit unit 230 through the routing cell (not shown), and this splicing ear is used to be connected on the sensor mat 162 of check-out console 100.In addition; Form external connection terminals in not seized drafting board 100 region covered on first pad, 231 outer circumferential sides of second pad 232 under being in stack layer situation (will discuss after a while), so that handled signal in the circuit unit 230 is exported to external unit.This external connection terminals is electrically connected on the circuit unit 230 through the routing cell (not shown).Should also be pointed out that in the first embodiment pattern first pad 231 and first fills up 232 and all uses aluminium to form through the mode that is similar in first embodiment pattern electrode 131 and 132.
In addition, reference number 240 expression silicon nitride films, it is as the diaphragm that can prevent circuit unit 230 corrosion.First pad 231 and second fills up 232 and exposes with respect to silicon nitride film 240.
Check-out console 100 and the circuit board 200 in said structure, made are stacked, so that the sensor mat on the plane of feasible formation check-out console 100 is relative with first pad position on the plane that forms circuit board 200.Pile up under the situation this, the sensor mat 162 of check-out console 100 is through (for example: scolder) be connected on first pad 231 of circuit board 200 connecting material 310.In other words, owing to sensor mat 162 is connected on first pad 231 that is positioned at the shaping plane rear side that forms electrode 131 and 132.These electrodes 131 and 132 are electrically connected on the circuit unit 230.
In addition, containment member 320 is arranged at according to annular shape between the first mat forming plane of sensor mat shaping plane and circuit board 200 of check-out console 100.Therefore, coupling part and the circuit unit 230 between the sensor mat 162 and first pad 231 all seals according to air tight manner.As for encapsulant 230; Be arranged at material under the situation between the first mat forming plane of sensor mat shaping plane and circuit board 200 of check-out console 100; If this material can either seal the coupling part between the sensor mat 162 and first pad 231 with air tight manner; Can seal circuit unit 230 and sensor mat shaping plane and the first mat forming plane with air tight manner again, so just can use any encapsulant.In the first embodiment pattern, use epoxy series bonding agent as encapsulant 320 so that coupling part and circuit unit 230 are sealed according to air tight manner, and be convenient to check-out console 100 is fixed on the circuit board 200.Therefore, sensor mat 162 (electrode 131 and 132) and the reliability that be connected of first pad between 231 (circuit units 230) are improved.
And second pad 232 that is formed on the outer circumferential side that the position is set of containment member 320 is protected by protection member 330.This protection member 330 is used to prevent to corrode second pad 232.In the first embodiment pattern, with the silicon gel application in the protection member 330 on.Be connected on the external unit although should be pointed out that second pad 232, for the sake of brevity, in the first embodiment pattern, it omitted through tack line or the like.
State in the use in the capacitor type humidity sensor 300 of structure; When moisture penetration is gone in the humidity inductive film 150; Because moisture has bigger relative dielectric constant, so the relative dielectric constant of humidity inductive film 150 just changes along with the amount of the moisture that penetrates.Therefore, when humidity inductive film 150 is used as a dielectric when part, will be changed by the electrostatic capacitance of a pair of capacitor that constitutes of these electrodes 131 and 132, this subsequently capacitance variations is handled so that convert voltage to by circuit unit 230.The amount of the moisture that is comprised in the humidity inductive film 150 can be corresponding with the humidity around the capacitor type humidity sensor 300, thereby can detect humidity according to the electrostatic capacitance between a pair of in these electrodes 131 and 132.
Next, will be referring to Fig. 2 A to 2C, the method that is used to make the capacitor type humidity sensor 300 that uses said structure is described.Fig. 2 is a cut-open view, and it is used to represent the instance of the manufacturing step that the manufacturing approach of capacitor type humidity sensor 300 is used; Fig. 2 A representes the check-out console preparation process; Fig. 2 B indication circuit plate preparation process; Fig. 2 C represents Connection Step.
At first, carry out the check-out console preparation process.In other words; Shown in Fig. 2 A; For example utilizing, CVD (chemical vapour deposition) method makes the silicon oxide film 120 that is equivalent to insulation film be formed at the front of Semiconductor substrate 110; And vapor deposition method makes aluminium (being Al) be deposited on the silicon oxide film 120 through for example using, and subsequently, makes the aluminium of deposition form pattern so that form electrode 131 and 132.After forming electrode 131 and 132, make this silicon nitride film 140 be covered with the top of electrode 131 and 132 and the space between electrode 131 and 132 thereby for example utilize the plasma CVD method to make the silicon nitride film 140 that is equivalent to diaphragm.So humidity inductive film 150 just is formed in the presumptive area on the silicon nitride film 140, thereby make this silicon nitride film 140 be covered with the top of electrode 131 and 132, and be covered with the space between electrode 131 and 132.
In this case, as for the method that is used to form humidity inductive film 150, can use whirl coating and silk screen print method.In the first embodiment pattern; Silk screen print method is through using the cream of being processed by the precursor (promptly wherein using the precursor of polyamic acid as the humidity inductive film of basic framework) of polyimide to realize, so that on the positive silicon nitride film 140 of the topmost that makes this cream be deposited on to be equivalent to Semiconductor substrate 11.Thereafter, the cream of this deposition is heated with predetermined temperature and sclerosis (so that forming acid imide), thereby forms the humidity inductive film of being processed by polyimide 150.
In addition, constitute on the back side on electrode forming plane that sensor mat 162 with respect to the splicing ear of circuit board 200 is formed at Semiconductor substrate 110.The mask (not shown) is formed at the back side of Semiconductor substrate 110, and subsequently, the etching fluid of TMAH solution (tetramethyl ammonium hydroxide solution) and so on carries out etching to Semiconductor substrate 110 through for example using.After etching process, the silicon oxide film 120 that is positioned on the etching area of Semiconductor substrate 110 just is removed, form then through hole 160 simultaneously with sensor mat 162 as the bottom.
Then, after insulation course 163 is formed at the side of the back side and through hole 160 on electrode forming plane of Semiconductor substrate 110, for example, make aluminium carry out vapour deposition and make the aluminium of deposition form pattern from the rear side of Semiconductor substrate 110.Therefore, conductor 161 just is formed within the through hole 160, and is connected in sensor mat 162 on this conductor 161 and also is formed on the back side on electrode forming plane of Semiconductor substrate 110.Should be pointed out that the present invention has more than and is limited to the foregoing description about being used to form the method for through hole 160, conductor 161 and sensor mat 162.For example, when forming conductor 161, can be used alternatingly silk screen print method and ink jet printing method.Preferably, a large amount of metals are provided in through hole 160.
Next, carry out the circuit board manufacture step.In other words, for example utilizing, ion implantation, thermal diffusion method, CVD method or the like make the part of circuit unit 230 be formed on the surface of Semiconductor substrate 210.Subsequently, for example utilizing, the CVD method forms the silicon oxide film 220 that is equivalent to insulation film and forms the contact hole (not shown).Thereafter, vapor deposition method makes al deposition on silicon oxide film 220 through for example using.Subsequently, the aluminium composition pattern owing to deposition fills up 232 so formation circuit unit 230, first fills up 231 and second, has formed in addition to be used to make circuit unit 230, first pad 231 and second to fill up 232 wiring portion (not shown) connected to one another.
In addition, in the first embodiment pattern, for example utilizing, plasma CVD method just makes that the silicon nitride film 240 that is equivalent to diaphragm is formed on these structural details.In this case, in order to make circuit board 200 be electrically connected on check-out console 100 and the external unit, be formed at the silicon nitride film 240 that first pad 231 and second fills up on 232 and be removed through etching process.Should be pointed out that manufacturing sequential, can at first carry out any one in these preparation processes, perhaps hocket according to parallel mode about check-out console preparation process and circuit board manufacture step.
Then, under the situation of preparation check-out console 100 and circuit board 200, carry out Connection Step.In other words; When connecting the 231 last times of first pad that material (i.e. welding material in the first embodiment pattern) is coated on circuit board 200; For example check-out console 100 is being positioned so that make sensor mat 162 and first fill up under the relative situation in 231 positions, be abutted against on the electrode forming plane of heating tool (not shown) and check-out console 100.Then, heating tool heats this electrode forming plane, and heating tool is exerted pressure to the electrode forming plane along the direction of circuit board 200 simultaneously.Therefore, make sensor mat 162 be connected on first pad 231 thereby connect material 310 fusings, and then make electrode 131 and 132 be electrically connected on the circuit unit 230.
After on sensor mat 162 being connected in first pad 231; Epoxy series bonding agent as containment member 320 is injected in the annular shape; Entering is formed in the gap between the first mat forming plane of sensor mat shaping plane and circuit board 200 of check-out console 100; Subsequently, this epoxy series bonding agent is heated so that harden.Therefore, first mat forming plane of the sensor mat shaping plane of the sensor mat 162 and first pad coupling part and the circuit unit 230 between 231 through check-out console 100, circuit board 200 and encapsulant 320 and sealed with air tight manner.Like this, just make capacitor type humidity sensor 300 according to above-mentioned manufacture.
Should be understood that; Because second pad 232 is equivalent to be used for circuit unit 230 handled signals are imported the external connection terminals of external units; So for example after accomplishing or after being connected in second pad 232 on the external unit through the tack line (not shown) to the characteristic investigation of capacitor type humidity sensor 300, second fill up 232 (and coupling parts) by protective material 330 for example covering/the protection of silicon gel be corroded so that prevent it.Although should be pointed out that second pad 232 to be connected on the external unit through tack line or the like, for the sake of brevity, in this first embodiment pattern or with its omission.
As noted earlier, according to the structure of the capacitor type humidity sensor 300 of the first embodiment pattern, the detecting unit and the circuit unit 230 that are made up of electrode 31,32 and humidity inductive film 50 are provided on different plate 100 and 200.Sensor mat 162 as with circuit unit 230 connection terminals is provided on the back side on the detecting unit shaping plane in the check-out console 100.Therefore, because the protective material example gel need not be provided on the detecting unit, this just is different from conventional capacitor type humidity sensor, thereby can avoid reducing the response characteristic of this capacitor type humidity sensor 300.
In addition; In the first embodiment pattern; Check-out console 100 and circuit board 200 are being piled up so that make under the relative situation in the first mat forming planimetric position of sensor mat shaping plane and circuit board 200 of check-out console 100, connector pad 162 is connected in first and fills up on 231 through connecting material 310.In addition, this coupling part is sealed with air tight manner with respect to outside atmosphere through sensor mat shaping plane, the first mat forming plane and containment member 320.Therefore, just can prevent corrosion to the sensor mat 162 and first coupling part of pad between 231, in addition can be so that compact more along the structure of the sensor 300 of in-plane.In other words; If the size of this sensor 300 equals the size of conventional type sensor along in-plane; The area of the detecting unit of this sensor 300 just can be greater than the area of the detecting unit of conventional type sensor so, thereby makes the sensitivity of this sensor 300 be able to improve.
In addition; When circuit unit 230 and first pad 231 were formed on the same planar side of Semiconductor substrate 210, circuit unit 230 was sealed with air tight manner with respect to outside atmosphere through sensor mat shaping plane, the first mat forming plane and the containment member 320 that combines with first pad 231.Therefore, be not provided in to prevent that still circuit unit 230 is corroded on the circuit unit 230 (silicon oxide film 210) even be used as the silicon nitride film 240 of diaphragm.Should be appreciated that in this first embodiment pattern silicon nitride film 240 forms in the step of back between Connection Step at circuit board 200 and forms, so that avoid circuit unit 230 to receive the adverse effect of outside atmosphere.
In addition, second pad 232 is formed on the first mat forming plane that is positioned at the circuit board 200 on the outer circumferential side that containment member 320 is provided with the position.This second pad 232 is used for circuit unit 230 handled signals are imported external unit.Therefore; For example; Even in sensor mat 162 and first coupling part of pad between 231 through containment member 320 and with air tight manner by the situation of sealing earlier under; The test unit and second pad 232 are abutted against so that carry out attribute testing, and perhaps sensor 300 can be electrically connected on the external unit through second pad 232.In addition, because second pad 232 is provided in to be different from the plane on electrode forming plane, so at electrode 131 and 132 and humidity inductive film 150 when not being capped, second fills up 232 still can be covered/protect by protective material 330.
Although be described for the preferred embodiments of the present invention pattern, the present invention is not limited in the foregoing description pattern, but can be modified to various patterns.
In the first embodiment pattern of institute's example, will be used as the plate that constitutes check-out console 100 by the Semiconductor substrate 110 that silicon is processed, and electrode 131 and 132 is formed on this Semiconductor substrate 110 through silicon oxide film 120 all.As noted earlier, if Semiconductor substrate 110 is used as substrate, check-out console 100 can utilize the general semiconductor process and form so, thereby makes manufacturing cost be able to simplify.Yet,, can use for example glass substrate of dielectric substrate for substrate.
Similarly, in the first embodiment pattern of institute's example, with the plate of Semiconductor substrate 210 as forming circuit plate 200, circuit board 200 forms through using semiconductor processes.Yet circuit board 200 is not to be only limited to above-mentioned instance, but can use pottery and resin as plate.
In addition, in the first embodiment pattern of institute's example, circuit unit 230 also the sensor mat shaping plane through check-out console 100, circuit board 200 the first mat forming plane and containment member 320 and sealed with air tight manner.In other words, the circuit unit 230 and first pad 231 are formed on the same planar side of Semiconductor substrate 210 in this instance of institute's example.Yet as shown in Figure 3, alternatively, sensor 300 is configured such that circuit unit 230 is provided in the rear side on the first mat forming plane.In other words, Fig. 3 is the cut-open view that schematically shows the modification of this first embodiment pattern, and is promptly corresponding with Figure 1B.
Under the situation of this alternative structure, circuit unit 230 can be covered like the silicon gel by protective material 330.Be to be understood that; In Fig. 3, reference number 250 expressions are formed at the through hole in the Semiconductor substrate 210, the conductor in the reference number 251 expression through holes 250; Reference number 252 expression insulation courses, and circuit unit 230 also is connected on the conductor 251 through the edge pad 230a of circuit unit 230.In addition, when second pad 232 was provided on the shaping planar side of circuit unit 230, this second pad 232 was just by protective material 330 covering/protections.Yet because in the sensor construction shown in Figure 1A and Figure 1B, protective material 330 is not provided on the surperficial rear side of first mat forming, so along the structure of the sensor of the stack layer direction compact conformation that can become.
Should be appreciated that the structure of wherein piling up check-out console 100 and circuit board 200 is not limited only to said structure.Alternatively, can use another kind of structure, for example, wherein have only one second pad 232 to be formed on the rear side on the first mat forming plane.
In addition, for electrode 131 and 132 is electrically connected on the circuit unit 230, the present invention is not limited only to the structure that check-out console 100 and circuit board 200 pile up mutually.For example, the sensor mat 161 that is provided on the back side, electrode forming plane can be connected mutually through using joint line with first pad 231.If use this structure; Wherein at least one splicing ear that is used to connect external unit is not provided in the electrode forming planar side of check-out console 100, so protective material 33 just be not arranged at by electrode 131 and 132 and the detecting unit that constitutes of humidity inductive film 150 on.Therefore, just can prevent the reduction of response characteristic.
In addition, in the first embodiment pattern of institute's example, pair of electrodes 131 and 132 forms according to broach shape mode.Yet, if this structure process through humidity inductive film 150 being inserted between these electrodes 131 and 132 a pair of, so for the just not concrete restriction of structure of detecting unit.
(second embodiment)
Be to be understood that; In following embodiment pattern; Will silk screen print method according to the present invention be applied to form the humidity inductive film of capacitor type humidity sensor 400; This sensor 400 is to make through the humidity inductive film is inserted between the pair of electrodes, and the relative dielectric constant of humidity inductive film changes along with the humidity situation simultaneously.
Referring to Fig. 4 A and 4B, at first the schematic structure of capacitor type humidity sensor 400 is described.Fig. 4 A is the planimetric map that is used to represent this capacitor type humidity sensor 400; Fig. 4 B is the cut-open view that shows the sensor of cutting open along the line IVB-IVB among Fig. 4 A.Should be pointed out that for simplicity, in Fig. 4 A, the pair of electrodes that is positioned under the humidity inductive film and second insulation film is illustrated with transistorized mode.In addition, in Fig. 4 A and 4B, only show peripheral part of detecting unit.In detecting unit, electric capacity is along with the humidity of its peripheral part changes and changes.
In Fig. 4 A, reference number 210 shows the Semiconductor substrate as substrate, and Semiconductor substrate 210 is processed by silicon in this embodiment pattern.Subsequently, the silicon oxide film 220 as first insulation film is formed on the upper plane of Semiconductor substrate 210.Pair of electrodes 131 and 132 set-up mode make these electrodes 131 and 132 separate each other and are positioned at relative to one another on the same plane on the silicon oxide film 220.
Although the shape to electrode 131 and 132 is not done concrete restriction, in this embodiment pattern, shown in Fig. 4 A, respective electrode 131 and 132 is configured to by common electrode part 131a and 132a and a plurality of broach shape electrode part 131b and 132b.These a plurality of broach shape electrode part 131b and 132b extend along a direction respectively from common electrode part 131a and 132a.So, pair of electrodes 131 and 132 is arranged so that the broach shape electrode part 131b and the 132b arrangement alternate with each other of pair of electrodes 131 and 132.As noted earlier because broach shape shape is used as the shape of pair of electrodes 131 and 132, and can be so that the area that is provided with of electrode 131 and 132 diminishes, so just can so that broach shape electrode part 131b and 132b be disposed opposite to each other in these areas changes greatly.Therefore, the variable quantity of the electrostatic capacitance between the electrode 131 and 132 that changes along with the humidity variation of its peripheral part increases, thereby just can improve the sensitivity of capacitor type humidity sensor 400.
With regard to electrode 131 and 132, can use wiring material for example Al, Ag, Au, Cu, Ti, Poly-Si or the like.In this first embodiment pattern, these electrodes 131 and 132 can use aluminium (Al) to make.Should be pointed out that broach shape electrode part 131b and 132b corresponding to the electrode in the claim scope that is defined in patent, and common electrode part 131a and 132a are corresponding to the wiring portion in the claim scope that is defined in patent.
In addition, in this embodiment pattern, silicon nitride film 240 forms second insulation film on Semiconductor substrate 210, so that make this silicon nitride film 140 be covered with these paired electrodes 131 and 132.Therefore, can suppress by the caused corrosion of moisture these electrodes 131 and 132.For example, have under the situation with respect to the anticorrosion properties of moisture at electrode 131 and 132, humidity sensor 400 can be set under the situation that does not have silicon nitride film 240.
Shown in Fig. 4 A; Should be understood that; When being formed at the marginal portion of electrode 131 and 132 as the electronic pads 131c of external connection terminals and 132c, these electrodes 131 and 132 just are connected in the signal processing circuit that is used to proofread and correct the correcting circuit of output and is used to detect the electrostatic capacitance change amount through these electronic padses 131c and 132c.These electronic padses 131c and 132c must expose so that be connected on correcting circuit or the like, thereby these electronic padses 131c and 132c are covered by silicon nitride film 240.In addition, in this embodiment pattern, because Semiconductor substrate 210 usefulness are acted on the substrate of constructing capacitor type humidity sensor 400, so above-mentioned correcting circuit or the like can be formed on the same substrate.
Be formed on the silicon nitride film 240 so that make this humidity inductive film 150 be covered with the space between a pair of and these electrodes 131 and 132 in these electrodes 131 and 132 by having the made humidity inductive film 150 of hygroscopic polymeric material.For polymeric material, can use polyimide, butyric acid/cellulose acetate or the like.In this embodiment pattern, humidity inductive film 150 forms through using polyimide.Should be pointed out that with regard to manufacturing process, used and to have removed the silk screen print method that pattern forms operation through optical processing.To describe this manufacturing approach after a while.
State in the use in the capacitor type humidity sensor 400 of structure; When moisture penetration is gone in the humidity inductive film 150; Because moisture has bigger relative dielectric constant, so the relative dielectric constant of humidity inductive film 150 just changes along with the amount of the moisture that penetrates.Therefore, when humidity inductive film 150 is used as a dielectric when part, will change by the electrostatic capacitance of a pair of capacitor that constitutes of these electrodes 131 and 132.The amount of the moisture that is comprised in the humidity inductive film 150 can be corresponding with the humidity around the capacitor type humidity sensor 400, thereby can detect humidity according to the electrostatic capacitance between a pair of in these electrodes 131 and 132.
Next, will be referring to Fig. 5 A to 5C, the method that is used to make capacitor type humidity sensor 400 is described.Fig. 5 A to 5C is a cut-open view, and it is used to represent the manufacturing step according to the manufacturing approach of the capacitor type humidity sensor 400 of this embodiment pattern; Fig. 5 A representes the electrode forming step; Fig. 5 B representes print steps; Fig. 5 C represents the step after the humidity inductive film forms.Usually under wafer state, provide although should be appreciated that Semiconductor substrate 210, for simplicity, only show its part.
At first, shown in Fig. 5 A, carry out the electrode forming step.For example utilizing, CVD (chemical vapour deposition) method makes the silicon oxide film 220 that is equivalent to first insulation film be formed on the front of Semiconductor substrate 210; Subsequently, for example utilizing, vapor deposition method forms electrode 131 and 132 (among this figure broach shape electrode part 131b, 132b and pad 131c being shown) through using Al.In this embodiment pattern; In this step; Thereby the silicon nitride film 240 that also utilizes plasma CVD method manufacturing for example to be equivalent to second insulation film makes this silicon nitride film 240 be covered with the top of electrode 131 and 132, and is covered with the space between electrode 131 and 132.
Next, shown in Fig. 5 B, be used to form the print steps of humidity inductive film 150.In this print steps; After electrode 131 and 132 formed, Semiconductor substrate 210 was conveyed in the screen printing apparatus, subsequently; Screen printing apparatus is carried out the serigraphy operation through using cream 410, and cream 410 comprises the polymeric material corresponding to the structured material of humidity inductive film 150.
Particularly; Screen mask 420 is prepared so that the pattern hole 421 in the shaping district that is equivalent to humidity inductive film 150 is provided, simultaneously through (for example: make screen mask 420 stainless steel cloth with 250 mesh) emulsion 423 being coated on mesh screen 422.Subsequently, the front of this screen mask 420 and Semiconductor substrate 210 ( electrode 131 and 132 shaping planar side) is abutted against.To by cream 410 that the precursor (promptly wherein use polyamic acid precursor as the humidity inductive film of basic framework) of polymkeric substance process be applied to this screen mask 420 on thereafter.Because extrudate 130 is slided, so cream 410 is printed through the pattern hole 421 on the silicon nitride film 240 that is positioned at the topmost front that is equivalent to Semiconductor substrate 210.In addition, after print steps, when printing paste 410 is heated with predetermined temperature and hardens (so that forming acid imide), just form the humidity inductive film of processing by polyimide 150, shown in Fig. 5 C.Then, in the cutting step (not shown), humidity inductive film 150 is handled so that be cut into chip unit.
On the other hand, in above-mentioned capacitor type humidity sensor 400, because the manufactured sensor structure is compact, thus just need the positional precision of humidity inductive film 150, thereby screen mask 420 must accurately be located with respect to Semiconductor substrate 210.
About this demand, in conventional type serigraphy operation, can carry out following method.In other words, at first, screen mask 420 is abutted against with model substrate (that is, for example, not forming the Semiconductor substrate 210 of electrode 131,132 or the like), and cream is the serigraphy formula.So, the location situation of the Printing Zone of having printed through pattern hole 421 just can through use imaging device for example the CCD camera detect.So, just Semiconductor substrate 210 was positioned on the stage, so that the film shaped district of Printing Zone of being detected and humidity inductive (will form the zone of humidity inductive film) can become roughly the same position.Under the situation of this location, just can carry out printing operation.
Yet, under the situation that serigraphy is operated, make that cream 410 (the being humidity inductive film 150) thickness that is printed in Semiconductor substrate 210 fronts is evenly just difficult especially.This reason is by due to the what is called that for example betides the marginarium " saddle type " phenomenon.Therefore; As shown in Figure 6; Because the film shaped district of humidity inductive 50a is greater than the pattern hole 421 (dotted line institute region surrounded among Fig. 6) of screen mask 420, so can be so that the roughly uniform effective coverage of the film thickness of cream 410 is arranged among the film shaped district of the humidity inductive 450a in the Semiconductor substrate 210 of made.
In addition; Under the situation of serigraphy operation; Because extrudate 430 is slided so that printing paste 410, so the shape in actual print zone (humidity inductive film) and/or size are because the extension of mesh screen 422 and more or less be different from the shape and/or the size of pattern hole 421.Therefore, for example, as shown in Figure 6, the film shaped district of the humidity inductive of Semiconductor substrate 210 450a exists different between the Printing Zone 450b on the model substrate on shape and/or size with actual print.Like this, though Semiconductor substrate 210 is positioned operation simultaneously with Printing Zone 450b when the reference area, can not form humidity inductive film 150 with higher positioning accuracy.Should be pointed out that Fig. 6 is the synoptic diagram that is used to explain conventional positioning action.In Fig. 6, for simplicity, the shape of Printing Zone 450b is made into to equal pattern hole 421 shape of (with the film shaped district of humidity inductive 450a).
In this first embodiment pattern, above-mentioned print steps (Fig. 5 B) carries out according to following method.To use Fig. 7 A to Fig. 7 C and Fig. 8 A to Fig. 8 D to come this print steps is described now.Fig. 7 A to Fig. 7 C is the sketch that is used for description references pattern hole and location pattern.In addition, Fig. 8 is the sketch that is used to illustrate in greater detail the print steps shown in Fig. 5 B; Show to Fig. 8 A illustrative printing operation to the model substrate; Show to Fig. 8 B illustrative the position probing operation of reference pattern; The positioning action of Fig. 8 C illustrative ground expression Semiconductor substrate 10; And Fig. 8 D illustrative show printing operation to Semiconductor substrate 10.
Shown in Fig. 7 A, in this embodiment pattern, reference pattern hole 424 is formed on the screen mask 420, and reference pattern hole 424 constitutes the position reference with respect to this screen mask 420 and Semiconductor substrate 210 simultaneously.Particularly, through sandwiching the pattern hole 421 that forms humidity inductive film 150, and a plurality of (4 altogether) circular reference pattern hole 424 is provided in these positions respect to one another, 124 positions, reference pattern hole.The diameter of each more than or equal to 100 μ m and the scope that is less than or equal to 1000 μ m (for example: 300 μ m) all is arranged in these reference pattern holes 424.
In addition, shown in Fig. 7 B, the location pattern 460b that shape and size are substantially equal to reference pattern 460a is formed on the Semiconductor substrate 210, so that in response to the relation of the position between pattern hole 421 and the reference pattern hole 424, shown in Fig. 7 c.Print reference pattern 460a through reference pattern hole 424 (being dotted line institute region surrounded among Fig. 7 B) along the in-plane of Semiconductor substrate 210.Particularly; In the chip that is used to form capacitor type humidity sensor 400, location pattern 460b forms on the precalculated position of the chip region that is used for forming capacitor type humidity sensor 400 through making silicon nitride film 240 be deposited on the presumptive area and making silicon nitride film 240 also be deposited on to be different from.Alternatively; Location pattern 460b can form according to the shape that is printed in (forming structural detail under the situation of silicon nitride film 240) on the Semiconductor substrate 210 through reference pattern hole 424 in advance, perhaps forms according to the shape that is printed in advance on the model substrate through reference pattern hole 424.
So; Have under the situation of screen mask 420 and Semiconductor substrate 210 of said structure (forming silicon nitride film 240 and forming under the situation of location patterns) through this silicon nitride film 240 in preparation; At first; Shown in Fig. 8 A, model substrate 470 (promptly not forming the Semiconductor substrate 210 of electrode 131 and 132) is temporarily located and is fixed on the platform 440 of screen printing apparatus.Thereafter, platform 440 is fed to the desired location of screen mask 420, and screen mask 420 is abutted against with model substrate 470 simultaneously, and the cream 410 that becomes humidity inductive film 150 is printed.Simultaneously, the printing condition of the printing condition of model substrate 470 and Semiconductor substrate 210 (will describe after a while) is roughly the same.In this embodiment pattern; Height to platform 440 is regulated, just can so that the interval between the front of the lower flat of interval between the front of the lower flat of screen mask 420 and model substrate 470 and screen mask 420 and Semiconductor substrate 210 about equally.In addition, for model substrate 470, can alternatively use substrate with Semiconductor substrate 210 roughly the same thickness.
Next; Be back under the situation of substrate desired location at the desired location of platform 440 from screen mask 420; The reference pattern 460a that is printed on the mask substrate 470 forms images through the CCD camera that is installed on substrate desired location top, so that detect the position (coordinate figure) of reference pattern 460a with respect to platform 440.Particularly, the coordinate figure of reference pattern 460a is limited scaler (along two groups of scaler of x direction and y direction), and these coordinate figures are according to the mode of the doubling of the image of reference pattern 460a and be shown on the watch-dog.
After the position of confirming reference pattern 460a, model substrate 470 is pulled down from platform 440, subsequently Semiconductor substrate 210 is positioned on the platform 440 so that be fixed on the platform.Particularly, shown in Fig. 8 C, location pattern 460b adjusts the position of Semiconductor substrate 210 so that make location pattern 460b and the determined position consistency of scaler through 480 imagings of CCD camera then.
Then, under the situation of this location, platform 440 is transported to the installation side of screen mask 420, and subsequently, shown in Fig. 8 D, screen mask 420 is abutted against with Semiconductor substrate 210, and the cream 410 that constitutes humidity inductive film 150 is printed.Should be pointed out that Fig. 8 D is corresponding with previous Fig. 5 B.In addition, in Fig. 8 C and Fig. 8 D, for simplicity, omit the electrode 131 and 132 that is formed on the Semiconductor substrate 210, and only shown location pattern 460b.
As noted earlier; Method for printing screen according to this embodiment pattern; Because the location pattern 460b that is formed on the Semiconductor substrate 210 has roughly the same shape and roughly the same size with the reference pattern 460a that is printed on the model substrate 470, thus can so that Semiconductor substrate 210 and screen mask 420 with hi-Fix.Therefore, just can carry out the printing operation of higher positioning accuracy with respect to the film shaped district of the humidity inductive on the Semiconductor substrate 210 450a through the pattern hole 421 that is used to form humidity inductive film 150.
Should be understood that; Pattern 460b is corresponding with the film shaped district of that part of rather than humidity inductive 450a that can between screen mask 420 and Semiconductor substrate 210, constitute position reference in the location, and wherein cream 410 will be printed through the pattern hole on the Semiconductor substrate 210 421.Owing to shape and/or size of this location pattern 460b are fixing because of its characteristic is different from the film shaped district of humidity inductive 450a,, this location pattern 460b make this locate the size of pattern 460b and/or size and/or the shape that shape is passed through the reference pattern 460a of reference pattern hole 424 printings no better than so can manufacturing.
In addition, in this embodiment pattern, will carry out example to this instance.In other words, a plurality of location pattern 460b are provided in the relative position place through sandwiching among the film shaped district of the humidity inductive 450a.Therefore, even the shape and size difference between reference pattern hole 424 and printing, still can be carried out the printing operation of higher positioning accuracy through pattern hole 421 according to the shaping position of location pattern 460b and different.
In addition, under the situation that humidity inductive film 150 is processed by polyimide, shown in this embodiment pattern, need have chemical resistance owing to constitute the emulsion 423 of screen mask 420, so the protective layer thickness of emulsion 423 must be thicker.Therefore, if the size in reference pattern hole 424 less than 100 μ m, so printed reference pattern 460a just can not form fine pattern.Yet; In this embodiment pattern; Since along the size (diameter) in the reference pattern hole 424 of Semiconductor substrate 210 in-planes all be arranged on more than or equal to 100 μ m be less than or equal in the scope of 1000 μ m; So the reference pattern 460a that is printed on the model substrate 470 can be made into fine pattern, thereby make reference pattern 460a be easy to the location.
Although described the preferred embodiments of the present invention pattern, the present invention is not limited only to the foregoing description pattern, but can be modified to various patterns.
In this embodiment pattern of institute's example, will be used as substrate by the Semiconductor substrate 210 that silicon is processed, and electrode 131 and 132 is formed on this Semiconductor substrate 210 through insulation film 220 all.As noted earlier, if Semiconductor substrate 210 is used as substrate, capacitor type humidity sensor 210 can utilize the general semiconductor process and form so, thereby makes manufacturing cost be able to simplify.Yet, for substrate, can use dielectric substrate, for example glass substrate.In addition, method for printing screen of the present invention is not limited only to be used for forming the humidity inductive film 150 of capacitor type humidity sensor 400, but can be used, for example, in the method for printing conductive cream on the printed circuit board (PCB).
In addition, in this embodiment pattern, this example table is shown as reference pattern hole 424 for circular.When circle is processed in reference pattern hole 424; There is less shape difference between reference pattern hole 424 and the reference pattern 460a that prints through reference pattern hole 424; In addition; Owing to do not have the angle part just possibly be difficult to stopped up, be printed in the position of the reference pattern 460a on the model substrate 470 so can easily confirm (detection).Yet; Because location pattern 460b also processes and is roughly circle; So when location pattern 460b is positioned at the center of single reference pattern hole 124 and location pattern 460b, the risk that will exist Semiconductor substrate 210 to move with respect to grid mask 120 along rotation direction.On the contrary; For example; Shown in Fig. 9 A; Be roughly L shapedly if the shape in reference pattern hole 124 and the shape of location pattern 60b processed,, can confirm easily that also Semiconductor substrate 210 is with respect to the position of platform 440 both direction of in-plane (promptly along) even in using a reference pattern hole 424 time.The shape that should also be noted that reference pattern hole 424 is not limited only to above-mentioned instance, but can alternatively use polygon (like an instance, the rectangle shown in Fig. 9 B).Especially, if use a plurality of these reference pattern shapes 424, so just can so that Semiconductor substrate 210 locate with higher positioning accuracy.
In addition, in this embodiment pattern of institute's example, location pattern 460b is provided in to be different from the zone in shaping district of capacitor type humidity sensor 400 of Semiconductor substrate 210.Yet the part that is not covered by humidity inductive film 150 can be alternatively as the location pattern 460b in the capacitor type humidity sensor 400.For example, can be used alternatingly pad 131c and 132c so that as location pattern 460b.Under this alternative case, because location pattern 460b does not need independent formation, so can be so that sensor construction is compact and can be so that its manufacturing cost reduces.
In addition, in this embodiment pattern of institute's example, the size that is formed at the reference pattern hole 424 in the screen mask 420 be arranged on more than or equal to 100 μ m be less than or equal in the scope of 1000 μ m.Yet, the polyimide that cream 410 forms as humidity inductive film 150, and the protective layer thickness of emulsion 423 is thicker because of chemical resistance, so reference pattern hole 424 is dimensioned to more than or equal to 100 μ m.Therefore; Because kind situation according to cream 410; The thickness of protective seam maybe be thinner, thus along the size that is formed at the reference pattern hole 424 in the screen mask 120 of Semiconductor substrate 10 in-planes can alternatively be arranged on more than or equal to 50 μ m be less than or equal in the scope of 1000 μ m.Under the situation of size, the reference pattern 460a that prints according to the size of mesh opening that constitutes screen mask 420 is made for fine pattern with regard to being difficult to less than 50 μ m.Should be pointed out that owing to form the chip size at capacitor type humidity sensor 400 places to be selected from about 1000 μ m to 2000 μ m usually, its full-size is chosen to be less than or equal to 1000 μ m.In addition, for minimum dimension, under the situation that is circle, minimum dimension is set at its diameter.Under the L shaped situation shown in Fig. 9, and be under the polygonal situation, minimum dimension is set at an edge.
(the 3rd embodiment)
Figure 10 A and 10B are the sketch that schematically shows according to the structure of the capacitor type humidity sensor 500 of the 3rd embodiment pattern; Figure 10 A is the planimetric map that is used to represent this capacitor type humidity sensor 500; And the cut-open view that is used to illustrate humidity sensor 500 that Figure 10 B cuts open for the line XB-XB in Figure 10 A.Should be understood that for simplicity, in Figure 10 A, be positioned at pair of electrodes under the humidity inductive film by shown in the dotted line.
In Figure 10 A and Figure 10 B, reference number 510 shows substrate, in this embodiment pattern, uses to have flexible flexible substrate.If it is flexible that material has as the structured material of substrate 510, so in this just not concrete restriction.Therefore, in this embodiment pattern, be the structured material that thermoplastic resin membrane that the liquid crystal polymer (LCP) of 25 μ m is processed is applied to substrate 510 by thickness.
Subsequently, pair of electrodes 131 and 132 is arranged so that these electrodes 131 and 132 separate each other and are positioned at relative to one another on the same plane on the substrate 510.Although the shape to electrode 131 and 132 is not done concrete restriction, in this embodiment pattern, shown in Figure 10 A, respective electrode 131 and 132 is configured to by common electrode part 131a and 132a and a plurality of broach shape electrode part 131b and 132b.These a plurality of broach shape electrode part 131b and 132b extend along a direction respectively from common electrode part 131a and 132a.So, pair of electrodes 131 and 132 is arranged so that the broach shape electrode part 131b and the 132b arrangement alternate with each other of pair of electrodes 131 and 132.As noted earlier because broach shape shape is used as the shape of pair of electrodes 131 and 132, and can be so that the area that is provided with of electrode 131 and 132 diminishes, so just can so that broach shape electrode part 131b and 132b be disposed opposite to each other in these areas changes greatly.Therefore, the variable quantity of the electrostatic capacitance between the electrode 131 and 132 that changes along with the humidity variation of its peripheral part increases, thereby just can improve the sensitivity of capacitor type humidity sensor 500.
Should be understood that; At electrode 131 and 132 not under the situation with respect to the anticorrosion properties of moisture; Because protective film is formed on the substrate 510 so that make this protective film be covered with paired electrode 131 and 132, thereby can suppress by the caused corrosion to these electrodes 131 and 132 of moisture.
In addition, shown in Figure 10 A, electrode 131 and 132 has pad part 131c and the 132c as external connection terminals that is positioned at its marginal portion.These electrodes 131 and 132 550 are electrically connected on the circuit unit (circuit board) through going between; Wherein go between through using scolder or the like to be connected on these pad part 131c and the 132c; Signal processing circuit is formed on the circuit unit, and this signal processing circuit can correction output signal and can be detected the variable quantity of electrostatic capacitance simultaneously.These pads part 131c and 132c must expose so that be connected in and go between on 550, thereby these electronic padses 131c and 132c are not covered by humidity inductive film (will describe it after a while).
Also be formed on the substrate 510 so that make this humidity inductive film 150 be covered with the space between a pair of and these electrodes 131 and 132 in these electrodes 131 and 132 by having the made humidity inductive film 150 of hygroscopic polymeric material.With regard to polymeric material, can use polyimide, butyric acid/cellulose acetate or the like.In this embodiment pattern, humidity inductive film 150 forms through using polyimide.Should be pointed out that with regard to manufacturing process,, in this embodiment pattern, used and to have removed the silk screen print method that pattern forms operation through optical processing although it is contemplated that the whole bag of tricks.
State in the use in the capacitor type humidity sensor 500 of structure; When moisture penetration is gone in the humidity inductive film 150; Because moisture has bigger relative dielectric constant, so the relative dielectric constant of humidity inductive film 150 just changes along with the amount of the moisture that penetrates.Therefore, when humidity inductive film 150 is used as a dielectric when part, will change by the electrostatic capacitance of a pair of capacitor that constitutes of these electrodes 131 and 132.The amount of the moisture that is comprised in the humidity inductive film 150 can be corresponding with the humidity around the capacitor type humidity sensor 500, thereby can detect humidity according to the electrostatic capacitance between a pair of in these electrodes 131 and 132.
Next, will come the characteristic of the capacitor type humidity sensor 500 shown in this embodiment pattern is described through using Figure 11 A and Figure 11 B.Figure 11 is used for exemplary a kind of sketch that instance is installed that shows, and wherein the capacitor type humidity sensor 500 shown in this embodiment is installed on the plane of bending of installation unit; Figure 11 A is used to be illustrated in capacitor type humidity sensor 500 be installed on as the structure diagram under the situation on the vehicle windscreen of installation unit; Figure 11 B is the amplification view of outer peripheral portion that is used for the sensor 500 of presentation graphs 11A.
In order capacitor type humidity sensor 500 to be applied in the automatic control operation of automatic air-conditioning system, it as one of purpose, just need detect humidity with high precision with the mist formation phenomenon that can prevent vehicle windscreen near windshield.Yet; At the conventional capacitor type humidity sensor that will use rigid substrate directly and when being provided with respect to the plane of bending of windshield (being the windshield among Figure 11 A); Because this conventional capacitor type humidity sensor contacts with installation unit is local,, external force will have the risk that makes conventional capacitor type humidity sensor fracture when putting on this sensor.
In addition, can conceive this sensor structure is set.In other words, conventional capacitor type humidity sensor is arranged on the installation unit through buffer component, and this buffer component has consistent with the curved surface of windshield and curved surface that form.Be provided with in the structure at this sensor, the structure that comprises the capacitor type humidity sensor of buffer component becomes big.In other words, owing to disturb the scope in passenger's's (especially being installed on vehicle driver under the situation on the windshield) the visual field to increase at sensor, so will produce unfavorable result.
In this case, conventional capacitor type humidity sensor is set in the flat unit (for example buffer board 530), and this flat unit separates with the windshield with plane of bending.Therefore, just possibly produce error more or less with respect to reality part to be measured.
On the contrary; In capacitor type humidity sensor 500 according to this embodiment pattern; Although it is flexible that substrate 510 has; Shown in Figure 11 A and Figure 11 B, but when this capacitor type humidity sensor 500 is arranged so that the inner plane position of the back side and windshield 520 on electrode forming plane of substrate 510 is relative, can be so that the plane of bending of 500 generations of this humidity sensor and windshield 520 be out of shape accordingly.As noted earlier, according to the capacitor type humidity sensor 500 of this first embodiment pattern even can directly be arranged at installation unit for example on the windshield 520 with plane of bending.In other words, capacitor type humidity sensor 500 can detect humidity with degree of precision.Should be pointed out that in Figure 11 A the other end of lead-in wire 550 is electrically connected on the circuit unit (not shown) that is positioned under the buffer board 530, an end of lead-in wire 550 is connected on the capacitor type humidity sensor 500.In addition, in Figure 11 B, reference number 540 expression adhesion layers, and in this embodiment pattern, double-sided belt is used as this adhesion layer.
In addition, under the corresponding situation of being out of shape of plane of bending of this humidity sensor 500 generations and windshield 520, capacitor type humidity sensor 500 is fixed on the inner plane of windshield 520.Therefore; Even capacitor type humidity sensor 500 is applied external force; Because stress distribution; So this capacitor type humidity sensor 500 of this embodiment pattern can have the stronger structure with respect to external force, and be different from conventional capacitor type humidity sensor 500 directly is arranged at the structure on the windshield 520.
In addition, not only can take place to be out of shape accordingly, and can take place that another plane of bending of " R " is out of shape accordingly with having arbitrarily with plane of bending with predetermined " R " according to the capacitor type humidity sensor 500 of this embodiment pattern.Therefore, for example, although about " R " shape of the plane of bending of windshield 520 according to the kind situation of vehicle and different, can suitably use same capacitor type humidity sensor 500.Can be clear according to foregoing description, this capacitor type humidity sensor 500 not only can be arranged on the plane of bending, but also can be arranged on the flat surfaces.And for example, capacitor type humidity sensor 500 can be arranged on prismatic angle part or the like.
In addition, in this embodiment pattern, although circuit unit and the detecting unit that is configured to by electrode 131,132 and humidity inductive film 150 separately is provided, these circuit units and detecting unit are electrically connected mutually through lead-in wire 550.When using this set structure, can be so that be arranged at the structure compactness of the capacitor type humidity sensor 500 on the windshield 520.In other words, can reduce interference to passenger view.Yet humidity sensor 500 can be arranged so that alternatively that circuit unit is provided on the substrate 510, and wherein electrode 131,132 and humidity inductive film 150 are provided on this substrate 510.Under this alternative case, owing to can form electrode 131 and 132, can form the wiring route of forming circuit unit simultaneously, therefore can be so that the manufacturing step simplification.
Although described the preferred embodiments of the present invention pattern, the present invention is not limited only to the foregoing description pattern, but can be modified to various patterns.
In this embodiment pattern of institute's example, capacitance type transducers 500 is arranged on the front as the vehicle windscreen 520 of installation unit.Yet alternatively, except the foregoing description, the capacitor type humidity sensor 500 shown in this embodiment pattern can be provided with respect to the installation unit with another plane of bending.
(the 4th embodiment)
Figure 12 shows the cross section structure of the sensing unit 100 of humidity sensor, and it is as being applied to the sensor device in the fourth embodiment of the present invention.
As shown in Figure 12, the sensing unit 600 of humidity sensor has the storage unit 604 on a plurality of P of being positioned at type silicon substrates 1, and each storage unit 604 is by forming as a pair of nmos pass transistor 602 and capacitor 603.
Should be pointed out that word line 609a and bit line 609b are formed on the gate electrode 608 through mesosphere insulation film 610, and be electrically connected in gate electrode 608 and the drain electrode 606 through contact hole 610a and the 610b that is formed in the mesosphere insulation film 610.
Utilization is from front to the predetermined depth of silicon substrate 601 and the groove 611 that forms, and capacitor 603 is by the n that is formed on groove 611 inwalls
+Layer 612, be formed at n
+Go up so that the humidity inductive film 150 of filling groove 611 and the electrode 614 that is formed on the humidity inductive film 150 are configured on layer 612 surface.
The aperture area of groove 611 changes through making that its width in respective memory unit 604 is different.For example, when observing according to this figure, with respect to the width " W " of left side groove 611, the width setup of corresponding residue groove 611 becomes to double continuously to the right in this drawing.
n
+One end of layer 612 contacts with source region 605.
Humidity inductive film 150 changes its specific inductive capacity " ε " along with the humidity in the atmosphere.Therefore, the capacitance of capacitor 603 is to confirm according to the specific inductive capacity " ε " that is comprised in the humidity inductive film 150.
Electrode 614 is arranged to through insulation film 615 towards humidity inductive film 150.Two electrodes that constitute capacitor 603 form with above-mentioned humidity inductive film 613 through this electrode 614.
In this case, the capacitance of capacitor 603 " C " is defined as as follows:
(formula 1)
C＝ε×S/d
Should be understood that the area in symbol " S " the expression capacitor 603, and usually and to be positioned at that part of area of the humidity inductive film 150 on groove 611 base plane corresponding.In addition, symbol " d " is represented the electrode gap in the capacitor 603, and corresponding with the degree of depth of humidity inductive film 150.
As previously mentioned, therefore, the width of the groove 611 in respective memory unit 604 changes, thereby makes the capacitance " C " that is provided in the capacitor 603 in the respective memory unit 604 have mutually different value.
The equivalent electrical circuit of having represented each storage unit 604 in the humidity sensor of said structure among Figure 13.
Subsequently, Figure 14 shows the schematic structure of the sensor circuit of humidity sensor.
As shown in Figure 14, sensing unit 600 has a plurality of storage unit 604 according to cells arranged in matrix.Should be appreciated that each storage unit 604 reality shown in Figure 13 according to through in the matrix shape of Figure 14, divide again form each the section be provided with.Yet, in this width of cloth figure, omitted and thisly actually structure be set so that simplify this secondary figure.
The line decoder 620 that is provided is used for being connected to every word line 609a of this sensing unit 6100.With row address 609a from being used for humidity sensor is pushed control module (not shown) when input of line decoder 620,620 couples of respective word 609a of this line decoder apply voltage.Therefore; Just gate voltage is put on the gate electrode 608 of nmos pass transistor 602 of this storage unit 604; It is electrically connected on by on the word line 609a shown in the row address of a plurality of storage unit 604; And then, will be in the conductivity type top layer partial inversion of the silicon substrate under the gate electrode 608 601 so that make path conduction between source region 605 and the drain region 606.
In addition, sensor amplifier 630 and column selection switch 631 are provided between the respective bit line 609b of sensing unit 600.Column selection switch 631 is made up of for example MOS transistor, and is driven by column decoder 632.In other words; With column address from being used for humidity sensor is pushed control module (not shown) when input of this column decoder 632, column decoder 632 just to putting on the column selection switch 631 so that connect and the voltage of the corresponding column selection switch 631 of this input column address is regulated.Therefore, column decoder 632 can be controlled bit line 609b and be connected in the connection state between the data line 633 on the column selection switch 31.
Humidity sensor with said structure has a plurality of storage unit 604 of equipping a plurality of capacitors 603, and " C " is different for its capacitance.Therefore, under the situation of 150 absorptions of humidity inductive film and the corresponding moisture of atmospheric humidity, even the humidity in the atmosphere is identical, the capacitance of employed a plurality of capacitors 603 " C " is also different in the respective memory unit 604.In other words, in respective memory unit 604, capacitor 603 can change by detected capacitance " C ".
Therefore, if make the ultimate value of a plurality of storage unit 604 be equal to each other, the situation that writes of the capacitance of respective memory unit 604 " C " can become different along with the humidity situation in the atmosphere so.In other words, when the capacitance " C " of the capacitor 603 of respective memory unit 604 became predetermined value (ultimate value), respective memory unit 604 just got into the situation that writes.Then, because the capacitance " C " of capacitor 603 is expressed as above-mentioned formula 1, so if humidity increases and the specific inductive capacity " ε " of humidity inductive film 150 increases, the capacitance of capacitor 603 " C " just becomes big so.Owing in all a plurality of storage unit 604, make the electrode gap " d " of capacitor 603 be equal to each other, so this capacitance " C " is confirmed as variable through the specific inductive capacity " ε " of usable floor area " S " and capacitor 603.Therefore; In the capacitor 603 in being provided in respective memory unit 604; Even under the situation of low humidity; Have the capacitor 603 than large tracts of land " S ", promptly the capacitor of its groove 611 with big width also has bigger capacitance " C ", thereby makes this capacitor 603 get into the situation that writes.On the contrary; In the capacitor 603 in being provided in respective memory unit 604; If under the situation of low humidity; Have the capacitor 603 than small size " S ", promptly the capacitor of its groove 611 with narrower width also has less capacitance " C ", thereby makes this capacitor 603 get into the non-situation that writes.
Therefore, the output of respective memory unit 604 is to get into non-ly to write situation or write situation and replaced by " 0 " and " 1 " according to existing situation.In other words, these outputs of storage unit 604 become the value in response to the humidity in the atmosphere.
Then, read respective memory unit 604 through the corresponding data line that is used for respective memory unit 604 and be in and non-ly write situation or write situation, just possibly obtain to respond sensor output as the humidity of numerical value.
As noted earlier, according to this embodiment pattern, humidity sensor just can produce numeral output under the situation that does not need A/D converter.Therefore, just can avoid making the circuit of humidity sensor that structure is set and become complicated, and can be so that the humidity sensor compact conformation.
(the 5th embodiment)
Next, fifth embodiment of the present invention pattern is described.Figure 15 shows the layout structure of sensing unit used in the humidity sensor that is applied to the fifth embodiment of the invention pattern 700.
Shown in this secondary figure, in this second embodiment pattern, each capacitor 603 comprises a plurality of broach shape electrodes 701.Although should also be noted that a capacitor 603 that only shows in the storage unit 604, in fact the switching transistor that is similar to the 4th embodiment pattern is assemblied in each storage unit 604.
In this secondary figure, the interval in a plurality of broach shape electrodes 701 is set for to the right and is doubled continuously.Then, humidity inductive film 150 is provided in to equip on the whole surface of sensing unit 700 of this broach shape electrode 701, so that fill the space in the corresponding broach shape electrode 701.
Be similar to the 4th embodiment pattern, in such humidity sensor that capacitor 603 is formed by this broach shape electrode 701, the capacitance of capacitor 603 " C " changes along with the interval in these broach shape electrodes 701.Therefore, be similar to the 4th embodiment pattern, the output of humidity sensor can be represented according to digital form.Therefore, can obtain to be similar to the effect of the first embodiment pattern.
In the above-mentioned the 4th and the 5th embodiment, through the width of change groove 611, thereby the aperture area of groove 611 will change the capacitance " C " of capacitor 603.Alternatively, though the degree of depth of groove 611, promptly its vertically the size of (as shown in Figure 12) change with each storage unit 604, still can realize being similar to the effect of the 4th embodiment.Yet, under this alternative case, because different, must increase so be used to construct the size of the Semiconductor substrate 601 of humidity sensor along the length of the respective groove 611 of depth direction.Therefore, preferably use as above-mentioned embodiment pattern described in structure.
In addition, in the above-mentioned the 4th and the 5th embodiment pattern, the width of groove 611 doubles continuously.Alternatively, if the width setup of groove 611 is become gradually to increase, gradually changing of humidity will become possibility so.
In addition, using nmos pass transistor 602 and n
+Under layer 612 situation about being formed in the groove 611 the above-mentioned the 4th and the 5th embodiment is described, promptly first conduction type is a n type and second conduction type is the situation of p type.This shows an instance.In other words, the present invention can similar application in a kind of inverse structure, wherein first conduction type is chosen to " p " type and second conduction type is chosen to " n " type, its conduction type can with the conductivity type opposite of corresponding embodiment pattern.
In addition, different with the foregoing description, can be equal to each other so that constitute the width of the groove 611 of respective electrical container 603.Under this alternative case, for all capacitors 603 of a plurality of storage unit 604, the behavior that whether gets into the situation of writing about existing situation can be consistent mutually under same humidity.Therefore, this alternative structure can be as detecting the on-off switch that humidity becomes predetermined limit value.
Although invention has been described with reference to the preferred embodiments of the present invention, be to be understood that the present invention is not limited to preferred embodiment and structure.This invention is intended to cover various modification and equivalence structure is set.In addition, although various preferred combination and configuration are within the scope of the invention, comprise that other combination that discrete component more or less or is only arranged also belongs in spirit of the present invention and the scope with configuration.
Claims (8)
1. the pattern hole through screen mask being applied on the substrate and through screen mask is applied to the method on the substrate with serigraphy cream, and this method may further comprise the steps:
The preparation standard pattern hole is used as the localization criteria between screen mask and substrate in screen mask;
On substrate, form the location pattern;
Through screen mask being applied on the model substrate and cream is printed on the model substrate, thereby standard pattern is printed on the model substrate through the standard pattern hole;
The situation of standard pattern on the detection model substrate;
Make substrate orientation according to the position of location pattern on the substrate and the corresponding to mode in position that detects detected standard pattern in the step; And
In positioning step, make under the situation of substrate orientation through screen mask being applied to make on the substrate that cream is printed on the substrate, wherein
The location pattern has and standard pattern shape much at one, and
Location pattern on the substrate forms according to the positioning relation between standard pattern hole and the pattern hole.
2. method according to claim 1, wherein
The location pattern comprises a plurality of location pattern parts that are spaced apart at a predetermined distance from each other.
3. method according to claim 2, wherein
Be positioned at location pattern part on the substrate around the zone of substrate, and
In the step of printing cream, cream is printed in the zone of substrate through pattern hole.
4. according to each described method among the claim 1-3, wherein
Substrate comprises a pair of electrode that intermeshes,
Cream comprises the polymeric material of humidity inductive film,
Pattern hole forms according to the corresponding mode in humidity inductive film zone to be formed on pattern hole and the substrate that makes, and
Humidity inductive film zone to be formed is covered with the space between electrode and the electrode.
5. method according to claim 4, wherein
Location pattern on the substrate is provided by the part that is not covered by the humidity inductive film.
6. method according to claim 4, wherein
The standard pattern hole is L shaped or circular.
7. method according to claim 4, wherein
The standard pattern hole has a size on the plane of substrate, and
The size in standard pattern hole is arranged between 50 μ m and the 1000 μ m.
8. method according to claim 4, wherein
The humidity inductive film is processed by polyimide;
The standard pattern hole has a size on the plane of substrate; And
The size in standard pattern hole is arranged between 100 μ m and the 1000 μ m.
Applications Claiming Priority (12)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004261423 | 2004-09-08 | ||
| JP2004-261423 | 2004-09-08 | ||
| JP2004261423A JP2006078280A (en) | 2004-09-08 | 2004-09-08 | Capacitive humidity sensor |
| JP2004267204A JP2006082280A (en) | 2004-09-14 | 2004-09-14 | Screen printing method |
| JP2004-267205 | 2004-09-14 | ||
| JP2004267204 | 2004-09-14 | ||
| JP2004267205 | 2004-09-14 | ||
| JP2004267205A JP4219876B2 (en) | 2004-09-14 | 2004-09-14 | Capacitive humidity sensor and manufacturing method thereof |
| JP2004-267204 | 2004-09-14 | ||
| JP2004-284410 | 2004-09-29 | ||
| JP2004284410 | 2004-09-29 | ||
| JP2004284410A JP2006098203A (en) | 2004-09-29 | 2004-09-29 | Sensor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100999149A Division CN100451635C (en) | 2004-09-08 | 2005-09-08 | Physical quantity sensor and method for manufacturing the same |
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| Publication Number | Publication Date |
|---|---|
| CN101398401A CN101398401A (en) | 2009-04-01 |
| CN101398401B true CN101398401B (en) | 2012-03-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101691336A Expired - Fee Related CN101398402B (en) | 2004-09-08 | 2005-09-08 | Physical quantity sensor and method for manufacturing the same |
| CNB2005100999149A Expired - Fee Related CN100451635C (en) | 2004-09-08 | 2005-09-08 | Physical quantity sensor and method for manufacturing the same |
| CN2008101691321A Expired - Fee Related CN101398401B (en) | 2004-09-08 | 2005-09-08 | Physical quantity sensor and method for manufacturing the same |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2008101691336A Expired - Fee Related CN101398402B (en) | 2004-09-08 | 2005-09-08 | Physical quantity sensor and method for manufacturing the same |
| CNB2005100999149A Expired - Fee Related CN100451635C (en) | 2004-09-08 | 2005-09-08 | Physical quantity sensor and method for manufacturing the same |
Country Status (2)
| Country | Link |
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| JP (1) | JP2006078280A (en) |
| CN (3) | CN101398402B (en) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007316053A (en) * | 2006-04-27 | 2007-12-06 | Asmo Co Ltd | Water droplet detection sensor, water droplet detector, and control method for water droplet detector |
| EP2336758B1 (en) * | 2009-12-16 | 2012-08-29 | Nxp B.V. | Capacitive sensor |
| JP5547296B2 (en) * | 2010-10-04 | 2014-07-09 | アルプス電気株式会社 | Humidity detection sensor and manufacturing method thereof |
| EP2657691B1 (en) * | 2012-04-25 | 2018-08-29 | E+E Elektronik Ges.m.b.H. | Moisture sensor assembly |
| CN103076372B (en) * | 2012-12-29 | 2015-02-11 | 东南大学 | Capacitive-type humidity sensor |
| KR20150028929A (en) * | 2013-09-06 | 2015-03-17 | 매그나칩 반도체 유한회사 | Capacitive humidity sensor |
| JP6572645B2 (en) * | 2015-07-01 | 2019-09-11 | セイコーエプソン株式会社 | Liquid ejection device |
| CN105158582B (en) * | 2015-09-29 | 2018-03-09 | 北京工业大学 | One kind becomes spacing interdigitation adjacent capacitive sensors |
| CN105758902A (en) * | 2016-05-20 | 2016-07-13 | 南京信息工程大学 | Water content measuring probe based on PCB and electric field marginal effect, and manufacturing method of water content measuring probe |
| KR102024608B1 (en) * | 2017-01-11 | 2019-09-24 | 엘지전자 주식회사 | Sensor |
| CN107310250B (en) * | 2017-07-28 | 2022-12-27 | 张家港康得新光电材料有限公司 | Printing screen plate for manufacturing touch screen and manufacturing method of touch screen |
| JP2019211218A (en) * | 2018-05-31 | 2019-12-12 | セイコーエプソン株式会社 | Physical quantity sensor, composite sensor, inertia measurement unit, mobile body positioning device, portable electronic apparatus, electronic apparatus, mobile body, travel support system, display device, and physical quantity sensor manufacturing method |
| DE102018118612A1 (en) * | 2018-08-01 | 2020-02-06 | B-Horizon GmbH | Measuring system for measuring pressure and / or moisture |
| US20200133018A1 (en) * | 2018-10-24 | 2020-04-30 | Himax Technologies Limited | Diffractive optical element module |
| CN109613076A (en) * | 2019-01-24 | 2019-04-12 | 杭州米芯微电子有限公司 | Humidity measurement method and device |
| JP7156524B2 (en) * | 2019-06-07 | 2022-10-19 | 株式会社村田製作所 | measuring instrument |
| DE102019131308A1 (en) * | 2019-11-20 | 2021-05-20 | B-Horizon GmbH | Device for measuring pressure and / or humidity on the basis of ambient humidity |
| DE102019134732A1 (en) * | 2019-12-17 | 2021-06-17 | B-Horizon GmbH | Device for measuring pressure, gas and / or humidity on the basis of ambient humidity |
| CN115014427A (en) * | 2021-03-05 | 2022-09-06 | 奥特斯(中国)有限公司 | Measuring physical properties of component carriers based on design data |
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| GB2364668A (en) * | 1999-03-05 | 2002-02-06 | Matsushita Electric Ind Co Ltd | Screen printing method |
| CN1401210A (en) * | 2000-02-23 | 2003-03-05 | 凯斯技术有限公司 | Method of printing and printing machine |
| US6548106B1 (en) * | 1999-08-27 | 2003-04-15 | Minami Co., Ltd. | Method of applying corrosion inhibitor to parts mounted circuit board |
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| US4057823A (en) * | 1976-07-02 | 1977-11-08 | International Business Machines Corporation | Porous silicon dioxide moisture sensor and method for manufacture of a moisture sensor |
| JP3002276B2 (en) * | 1991-01-31 | 2000-01-24 | 株式会社鷺宮製作所 | Humidity sensor |
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| US6580600B2 (en) * | 2001-02-20 | 2003-06-17 | Nippon Soken, Inc. | Capacitance type humidity sensor and manufacturing method of the same |
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- 2005-09-08 CN CN2008101691336A patent/CN101398402B/en not_active Expired - Fee Related
- 2005-09-08 CN CNB2005100999149A patent/CN100451635C/en not_active Expired - Fee Related
- 2005-09-08 CN CN2008101691321A patent/CN101398401B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| GB2364668A (en) * | 1999-03-05 | 2002-02-06 | Matsushita Electric Ind Co Ltd | Screen printing method |
| US6548106B1 (en) * | 1999-08-27 | 2003-04-15 | Minami Co., Ltd. | Method of applying corrosion inhibitor to parts mounted circuit board |
| CN1401210A (en) * | 2000-02-23 | 2003-03-05 | 凯斯技术有限公司 | Method of printing and printing machine |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101398401A (en) | 2009-04-01 |
| JP2006078280A (en) | 2006-03-23 |
| CN1746668A (en) | 2006-03-15 |
| CN100451635C (en) | 2009-01-14 |
| CN101398402B (en) | 2012-03-21 |
| CN101398402A (en) | 2009-04-01 |
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